JPH07107736B2 - Magnetic storage body and manufacturing method thereof - Google Patents
Magnetic storage body and manufacturing method thereofInfo
- Publication number
- JPH07107736B2 JPH07107736B2 JP61196102A JP19610286A JPH07107736B2 JP H07107736 B2 JPH07107736 B2 JP H07107736B2 JP 61196102 A JP61196102 A JP 61196102A JP 19610286 A JP19610286 A JP 19610286A JP H07107736 B2 JPH07107736 B2 JP H07107736B2
- Authority
- JP
- Japan
- Prior art keywords
- coated
- inorganic oxide
- magnetic
- alloy
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003860 storage Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010410 layer Substances 0.000 claims description 38
- 150000001875 compounds Chemical class 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 229920000642 polymer Polymers 0.000 claims description 16
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 239000000314 lubricant Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 25
- 230000001050 lubricating effect Effects 0.000 description 21
- 239000000758 substrate Substances 0.000 description 19
- 239000002253 acid Substances 0.000 description 11
- 239000003921 oil Substances 0.000 description 10
- 125000003277 amino group Chemical group 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008713 feedback mechanism Effects 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 229910020630 Co Ni Inorganic materials 0.000 description 2
- 229910002440 Co–Ni Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 2
- 229910018536 Ni—P Inorganic materials 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 125000002883 imidazolyl group Chemical group 0.000 description 2
- 238000005461 lubrication Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HSTOKWSFWGCZMH-UHFFFAOYSA-N 3,3'-diaminobenzidine Chemical compound C1=C(N)C(N)=CC=C1C1=CC=C(N)C(N)=C1 HSTOKWSFWGCZMH-UHFFFAOYSA-N 0.000 description 1
- KJDSORYAHBAGPP-UHFFFAOYSA-N 4-(3,4-diaminophenyl)benzene-1,2-diamine;hydron;tetrachloride Chemical compound Cl.Cl.Cl.Cl.C1=C(N)C(N)=CC=C1C1=CC=C(N)C(N)=C1 KJDSORYAHBAGPP-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- IGOJDKCIHXGPTI-UHFFFAOYSA-N [P].[Co].[Ni] Chemical compound [P].[Co].[Ni] IGOJDKCIHXGPTI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000012154 double-distilled water Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Lubricants (AREA)
- Paints Or Removers (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は磁気記憶装置（磁気ディスク装置および磁気
ドラム装置等）に用いられる磁気記憶体およびその製造
方法に関するものである。Description: TECHNICAL FIELD The present invention relates to a magnetic memory used in a magnetic memory device (such as a magnetic disk device and a magnetic drum device) and a method for manufacturing the same.
（従来の技術） 一般に記録再生磁気ヘッド（以下ヘッドと呼ぶ）と磁気
記憶体とを主構成部とする磁気記憶装置の記録再生方法
には、大別して次のような二種類の方法がある。第一の
方法は、操作開始時にヘッドと磁気記憶体面との間に空
気層分の空間を作り、この状態で記録再生をする方法で
ある。この方法では、操作終了時に磁気記憶体の回転が
止まり、この時ヘッドと磁気記憶体面は操作開始時と同
様に接触摩擦状態にある。第二の方法は磁気記憶体に予
め所要の回転を与えておき、急激にヘッドを磁気記憶体
面上に押しつけることにより前記ヘッドと前記磁気記憶
体との間に空気層分の空間を作り、この状態で記録再生
する方法である。このように第一の方法では操作開始時
および終了時にヘッドと磁気記憶体面は接触摩擦状態に
あり、第二の方法ではヘッドを磁気記憶体面に押しつけ
る際に接触摩擦状態にある。これらの接触摩擦状態にお
けるヘッドと磁気記憶体の間に生じる摩擦力は、ヘッド
および磁気記憶体を摩擦させ、ついにはヘッドおよび金
属磁性薄膜媒体に傷を作ることがある。(Prior Art) Generally, there are roughly two types of recording / reproducing methods for a magnetic storage device having a recording / reproducing magnetic head (hereinafter referred to as a head) and a magnetic storage body as main components. The first method is a method of making a space corresponding to an air layer between the head and the surface of the magnetic memory at the start of operation, and recording / reproducing in this state. In this method, the rotation of the magnetic storage body stops at the end of the operation, and at this time, the head and the surface of the magnetic storage body are in the contact friction state as at the start of the operation. The second method is to apply a required rotation to the magnetic memory in advance, and suddenly press the head against the surface of the magnetic memory to create a space corresponding to an air layer between the head and the magnetic memory. This is a method of recording and reproducing in the state. As described above, in the first method, the head and the magnetic memory surface are in a contact friction state at the start and end of the operation, and in the second method, the head is in a contact friction state when the head is pressed against the magnetic memory surface. The frictional force generated between the head and the magnetic storage medium in these contact friction states may cause friction between the head and the magnetic storage medium, and eventually cause damage to the head and the metal magnetic thin film medium.
また前記接触状態においてヘッドのわずかな姿勢の変化
がヘッドにかかる加重を不均一にさせヘッドおよび磁気
記憶体表面に傷をつくることもある。Further, in the contact state, a slight change in the posture of the head may make the load applied to the head non-uniform, and scratch the head and the surface of the magnetic memory.
また更に前記接触摩擦状態におけるヘッドと磁気記憶体
間に生じる摩擦力は、特に多くのヘッドを取りつけた場
合に大きなトルクを生じ磁気記憶体を回転させるモータ
ーに好ましからぬ負担をかける。Further, the frictional force generated between the head and the magnetic memory in the contact frictional state causes a large torque particularly when many heads are attached, and imposes an unfavorable burden on the motor for rotating the magnetic memory.
また記録再成中に突発的にヘッドが磁気記憶体に接触
し、ヘッドと磁気記憶体間に大きな摩擦力が働き、ヘッ
ドおよび磁気記憶体が破壊されることがしばしば起こ
る。Further, during recording and reproduction, the head suddenly comes into contact with the magnetic memory, a large frictional force acts between the head and the magnetic memory, and the head and the magnetic memory are often destroyed.
この様なヘッドと磁気記憶体との接触摩擦力からヘッド
および磁気記憶体を保護するために磁気記憶体の表面に
保護皮膜を被覆することが必要であり、またこの保護皮
膜は前記ヘッドと磁気記憶体間に生じる接触摩擦力を小
さく（すなわち摩擦力を小さく）することが要求され
る。In order to protect the head and the magnetic memory from such contact frictional force between the head and the magnetic memory, it is necessary to coat the surface of the magnetic memory with a protective film. It is required to reduce the contact frictional force generated between the memory bodies (that is, reduce the frictional force).
磁気記憶体の表面に潤滑層を設けることは上記接触摩擦
力を小さくするための一つの方法である。上記潤滑層は
その下地体と十分に結合していなければならない。潤滑
層がその下地と十分に結合していないと、ヘッドと磁気
記憶体の接触摩擦により下地体から取り去られるかある
いはヘッドのまわりおよびヘッドと磁気記憶体の間に毛
管現象により潤滑剤が多量にあつまり、記録再生時のヘ
ッドの浮揚安定性に悪影響をおよぼす。Providing a lubricating layer on the surface of the magnetic memory is one method for reducing the contact frictional force. The lubricating layer must be well bonded to its substrate. If the lubrication layer is not sufficiently bonded to the substrate, it will be removed from the substrate due to contact friction between the head and the magnetic memory, or a large amount of lubricant will be generated around the head and between the head and the magnetic memory due to capillary action. In other words, the floating stability of the head during recording and reproduction is adversely affected.
上記潤滑層のヘッドとの接触摩擦力を小さくする効果は
ヘッドと磁気記憶体の界面に吸着ないし凝着が起こりに
くい非極性の分子層が介在することによりなされる。す
なわち潤滑層は磁気記憶体と結合する部分とヘッドと吸
着しにくい非極性部分とに配向していることが望まし
い。The effect of reducing the contact frictional force between the lubricating layer and the head is achieved by interposing a non-polar molecular layer, which is unlikely to be adsorbed or adhered, at the interface between the head and the magnetic memory. That is, it is desirable that the lubricating layer be oriented in a portion that is coupled to the magnetic memory and a non-polar portion that is hard to adsorb to the head.
このような潤滑層としてシリコンオイル、フッ素油、フ
ロロシリコンなどのオイル類やオクタデシルトリクロロ
シラン、ヘキサメチルジシラザンなどのシランまたはシ
ラザン類が提案されている（特公昭55−40932号公
報）。これらの潤滑層は、各々優れた特性を示すもの
の、オイル類においては非晶質無機酸化物と化学結合す
る結合力が十分でなく、シランまたはシラザン類におい
ては非極性の分子層の存在による表面エネルギーの低下
が十分でない。このためオイル類においては長期間の使
用における潤滑剤の損失、シランまたはシラザン類にお
いてはヘッドと磁気記憶体間に生じる接触摩擦力を小さ
くする効果が完全でないという問題があった。As such a lubricating layer, oils such as silicone oil, fluorine oil and fluorosilicone, silanes such as octadecyltrichlorosilane and hexamethyldisilazane or silazanes have been proposed (Japanese Patent Publication No. 55-40932). Although these lubricating layers each exhibit excellent characteristics, the bonding force for chemically bonding with the amorphous inorganic oxide is insufficient in oils, and the surface due to the presence of a non-polar molecular layer in silane or silazanes. Not enough energy reduction. Therefore, there is a problem in that the effect of reducing the lubricant loss in the case of long-term use in oils and the effect of reducing the contact frictional force generated between the head and the magnetic memory in silane or silazane are not perfect.
本発明の目的はこの問題点を解決した磁気記憶体および
その製造方法を提供することにある。An object of the present invention is to provide a magnetic memory body and a method of manufacturing the magnetic memory body that solve this problem.
（問題点を解決するための手段） この発明の要旨とするところは、アミノ基を有する高分
子を単分子層として酸化膜を被覆した磁気記憶体の上に
形成した後、アミノ基と化学結合する官能基をもつフッ
素油分子を塗布することである。すなわち、熱的機械的
安定性に優れ、かつ酸化膜と接着性が良く、アミノ基を
有する高分子の単分子膜を、酸化膜とフッ素油分子を強
固に結びつけるバインダーとして使用し、さらに分子量
の大きなフッ素油分子を使用することで、ヘッドの下地
体との界面に吸着が起こりにくい非極性の分子層を十分
に介在させ、潤滑層とヘッドとの接触摩擦力を小さくす
ることである。潤滑層として熱的機械的安定性に優れ、
アミノ基をもつ高分子、およびアミノ基と化学結合する
官能基を有するフッ素油分子を用いることが重要な点で
ある。(Means for Solving the Problems) The gist of the present invention is that a polymer having an amino group is formed as a monomolecular layer on a magnetic memory covered with an oxide film and then chemically bonded to the amino group. The application is to apply fluorine oil molecules having functional groups that That is, using a monomolecular film of a polymer having excellent thermal and mechanical stability and good adhesion to an oxide film and having an amino group as a binder that firmly binds the oxide film and the fluorinated oil molecule, By using large fluorine oil molecules, a non-polar molecular layer, which is unlikely to be adsorbed, is sufficiently interposed at the interface of the head with the base material, and the contact frictional force between the lubricating layer and the head is reduced. Excellent thermal and mechanical stability as a lubricating layer,
It is important to use a polymer having an amino group and a fluorine oil molecule having a functional group that chemically bonds with the amino group.
（作用） 非晶質無機酸化物は例えばポリ珪酸あるいはSiO2、ガラ
ス、アルミナなどのスパッタ膜である。アミノ基のよう
な極性基を持つ高分子は、このような非晶質酸化物との
接着性が優れ、アニル構造を有する高分子は、熱的機械
的安定性に優れている。アミノ基はまたフッ素化化合物
と高分子を化学結合させる官能基として働く。一方、フ
ッ素化化合物は表面エネルギーを低下させ優れた潤滑効
果を示す。したがって、一般式 で表される繰り返し単位を含む高分子物質の単分子層と
一般式 （r,sは０〜４までの整数） で表され、分子量が600〜30000の化合物を用いれば下地
体と強固に結合した優れた潤滑剤が得られる。ここで化
合物の分子量は、最小の分子量（ｐ＝1,q＝1,r＝0,s＝
０の場合）が600程度であり、また分子量が30000以上に
なると合成が非常に困難となりかつ適当な溶媒が存在し
ないことから、600〜30000程度が適当である。なお、ア
ニル構造は加熱または酸化によってイミダゾール構造に
かわるが成膜直後はアニル構造が多く、イソシアネート
基を有するフッ素油を塗布することによりイソシアネー
ト基とアミノ基の反応とアニル構造がイミダゾール基に
かわる反応が競争して起こることになる。しかしアミノ
基の数が多いので、実際上問題は起こらない。(Function) The amorphous inorganic oxide is, for example, polysilicic acid or a sputtered film of SiO 2 , glass, alumina or the like. A polymer having a polar group such as an amino group has excellent adhesiveness to such an amorphous oxide, and a polymer having an anil structure has excellent thermal and mechanical stability. The amino group also acts as a functional group that chemically bonds the fluorinated compound and the polymer. On the other hand, the fluorinated compound lowers the surface energy and exhibits an excellent lubricating effect. Therefore, the general formula Monolayers of polymeric materials containing repeating units represented by (R and s are integers from 0 to 4), and when a compound having a molecular weight of 600 to 30,000 is used, an excellent lubricant firmly bonded to the base body can be obtained. Here, the molecular weight of the compound is the minimum molecular weight (p = 1, q = 1, r = 0, s =
0) is about 600, and when the molecular weight is 30,000 or more, the synthesis becomes very difficult and no suitable solvent exists, so about 600 to 30,000 is suitable. Note that the anyl structure changes to the imidazole structure by heating or oxidation, but immediately after the film formation, there are many anyl structures, and the reaction of the isocyanate group and the amino group and the reaction of the anyl structure to the imidazole group by applying fluorine oil having an isocyanate group. Will occur in competition. However, since the number of amino groups is large, there is practically no problem.
また、このままでも下地体と高分子の接着性は優れてい
るが、非晶質無機酸化物を形成した後、プラズマ中で処
理したから高分子膜を形成すれば、表面のクリーニング
が完全になること、および、イオンの打ち込みにより高
分子と相互作用するラジカルが生成することなどの理由
で下地体と潤滑剤の接着性はさらに向上する。Also, the adhesiveness between the base material and the polymer is still excellent as it is, but the cleaning of the surface is completed by forming the polymer film because it is treated in plasma after forming the amorphous inorganic oxide. In addition, the adhesiveness between the base material and the lubricant is further improved due to the generation of radicals that interact with the polymer due to the implantation of ions.
更に、記録および再生にとってはスペーシング（記録お
よび再生時におけるヘッドと磁気記憶体の間隔）は小さ
い方が有利である。このため潤滑層の膜厚はできる限り
薄い方が望ましいが、この高分子と化合物は非常に薄い
潤滑層を形成することが可能である。すなわち、非晶質
酸化物の上にラングミュアーブロジェット（Langmuir−
Blodgett）法または水平付着法で高分子の単分子膜を形
成し化合物を塗布した後、化学反応を起こし、単分子層
と化合物とを結合させた後、フレオン洗浄することによ
り単分子層と結合していない余分の潤滑剤が取り去ら
れ、非常に薄い潤滑層が形成される。単分子層と化合物
の化学反応は塗布後自然に進行するが焼成すれば短時間
ですむ。Further, for recording and reproduction, it is advantageous that the spacing (the distance between the head and the magnetic memory at the time of recording and reproduction) is small. Therefore, it is desirable that the film thickness of the lubricating layer is as thin as possible, but the polymer and the compound can form a very thin lubricating layer. That is, Langmuir-Blodgett (Langmuir-
Blodgett) method or horizontal deposition method to form a polymer monolayer and apply the compound, then cause a chemical reaction to bond the monolayer and the compound, and then bond with the monolayer by Freon washing. The excess lubricant not applied is removed, forming a very thin lubricating layer. The chemical reaction between the monolayer and the compound proceeds naturally after coating, but it takes only a short time if baked.
（実施例） 以下、実施例により本発明を詳細に説明する。(Examples) Hereinafter, the present invention will be described in detail with reference to Examples.
（実施例１） 第１図は、この発明の磁気記憶体の構成を示す断面図で
ある。図面において本発明の磁気記憶体は、合金円盤１
上に非磁性合金層２が被覆され、この被膜の研磨面上に
金属磁性薄膜媒体３が被覆されており、さらにこの上に
非晶質無機酸化物４が被覆され、さらにこの上に潤滑剤
５が被覆されている。(Embodiment 1) FIG. 1 is a sectional view showing a structure of a magnetic memory body of the present invention. In the drawings, the magnetic memory according to the present invention is an alloy disc 1
The nonmagnetic alloy layer 2 is coated on the top surface, the magnetic magnetic thin film medium 3 is coated on the polishing surface of the coating, the amorphous inorganic oxide 4 is further coated thereon, and the lubricant is further coated thereon. 5 is coated.
合金円盤１として旋盤加工および熱矯正によって十分小
さなうねり（円周方向および半径方向でともに50μｍ以
下）をもった面に仕上げられたディスク状アルミニウム
合金基盤上に非磁性合金層２としてニッケルー燐（Ni−
Ｐ）合金を約50μｍの厚さにメッキし、このNi−Ｐメッ
キ膜を機械的研磨により表面粗さ0.04μｍ以下、厚さ約
30μｍまで鏡面仕上げしたのち、その上に金属磁性薄膜
媒体３としてコバルトーニッケルー燐（Co−Ni−Ｐ）合
金を約0.05μｍの厚さにメッキした。さらにこのCo−Ni
−Ｐ合金膜の上に、下に示した組成の溶液を十分に混合
し、ごみまたは析出したSiO2を0.05μｍの濾過膜を通し
て取り除いた後、回転塗布法により塗布した。As the alloy disk 1, a non-magnetic alloy layer 2 is made of nickel-phosphorus (Ni-Ni) on a disc-shaped aluminum alloy substrate finished on a surface having a sufficiently small waviness (both in the circumferential direction and 50 μm or less in the circumferential direction) by lathing and heat correction. −
P) alloy is plated to a thickness of about 50 μm, and this Ni-P plated film is mechanically polished to a surface roughness of 0.04 μm or less and a thickness of about
After mirror-finishing to 30 μm, a cobalt-nickel-phosphorus (Co—Ni—P) alloy as a metal magnetic thin film medium 3 was plated thereon to a thickness of about 0.05 μm. Furthermore, this Co-Ni
On the -P alloy film, a solution having the composition shown below was sufficiently mixed, dust or deposited SiO 2 was removed through a 0.05 μm filter film, and then the solution was applied by spin coating.
テトラヒドロキシシラン11％エチルアルコール溶液:20
重量％ ｎ−ブチルアルコール:80重量％ その後このディスク基板200℃の温度で３時間焼成しCo
−Ni−Ｐ合金膜の上にポリ珪酸の被膜４を形成した。Tetrahydroxysilane 11% ethyl alcohol solution: 20
Wt% n-butyl alcohol: 80 wt% After that, the disc substrate was baked at a temperature of 200 ° C. for 3 hours to form Co.
A polysilicic acid film 4 was formed on the -Ni-P alloy film.
3,3′−ジアミノベンジジンテトラヒドロクロライド塩
を二回蒸留水に溶解し3.2mMの溶液をつくり、これに0.1
Nの水酸化ナトリウムを加えpHが4.0になるように調製し
た。この溶液を、表面圧に恒圧に保つフィードバック機
構のついた水槽（商品名ラウダフィルムヴァーゲ（Laud
a Filmwaage））に入れ、水面にジヘキシルテトラフタ
ルアルジミンの1mMクロロホルム溶液をミクロシリンジ
を用いて静かに滴下した。３時間放置した後、表面圧が
10mN/mになるまでバリヤーを動かし、フィードバック機
構により表面圧を10mN/mに保ち、一晩放置した。このと
き水槽中の３、３′−ジアミノベンジジンと水面上のジ
ヘキシルテトラフタルアルジミンが反応しポリ（Ｏ−ア
ミノアニル）が水面上に形成される。溶液を８リットル
の二回蒸留水で置換した後、さらにバリヤーを動かし20
mN/mの表面圧にし、フィードバック機構により再び恒圧
に保った。ポリ珪酸の被膜４を形成したディスク基板を
昇降装置に取り付け、水面上の高分子膜を横切り１回上
下させ高分子単分子膜ポリ（Ｏ−アミノアニル）を基板
に付着させた。The 3,3'-diaminobenzidine tetrahydrochloride salt was dissolved in doubly distilled water to form a 3.2 mM solution.
Sodium hydroxide N was added to adjust the pH to 4.0. A tank with a feedback mechanism that keeps this solution at a constant surface pressure (brand name: Lauder Film Vage (Laud
a Filmwaage)), and a 1 mM chloroform solution of dihexyltetraphthalaldimine was gently added dropwise to the water surface using a microsyringe. After leaving for 3 hours, the surface pressure
The barrier was moved until it reached 10 mN / m, the surface pressure was kept at 10 mN / m by the feedback mechanism, and it was left overnight. At this time, 3,3'-diaminobenzidine in the water tank and dihexyltetraphthalaldimine on the water surface react to form poly (O-aminoanyl) on the water surface. After replacing the solution with 8 liters of double distilled water, move the barrier further.
The surface pressure was set to mN / m, and the constant pressure was maintained again by the feedback mechanism. The disk substrate on which the polysilicic acid coating 4 was formed was attached to an elevating device, and was vertically moved once across the polymer film on the water surface to adhere the polymer monomolecular film poly (O-aminoanil) to the substrate.
（p:q＝1:1）をフロリナートに溶解し0.08重量％の溶液
を作成し、0.2μｍのフィルターを通して濾過した。こ
の溶液をポリ（Ｏ−アミノアニル）の単分子層を形成し
た前記ディスク基板に2500回／分の回転速度で回転塗布
し、100℃の温度で40分間焼成を行ないポリ（Ｏ−アミ
ノアニル）のアミノ基とフッ素油分子のイソシアネート
基を反応させた後、フレオンで基板を洗浄し、余分の化
合物を洗い落とした。 (P: q = 1: 1) was dissolved in Fluorinert to prepare a 0.08% by weight solution, and the solution was filtered through a 0.2 μm filter. This solution was spin-coated at a rotation speed of 2500 times / min onto the disk substrate having a poly (O-aminoanyl) monomolecular layer formed thereon, and was baked at 100 ° C. for 40 minutes to give poly (O-aminoanyl) amino. After reacting the groups with the isocyanate groups of the fluorine oil molecule, the substrate was washed with Freon to wash off excess compounds.
化合物を塗布する前後の基板表面の表面エネルギーを種
々の表面張力をもつ液滴の接触角を測定し計算するとポ
リ珪酸被膜上の43erg/cm2から重合体塗布後では15erg/c
m2と表面エネルギーが著しく低下しヘッドと下地体との
接着を防止する効果が大きいことがわかった。The surface energy of the substrate surface before and after applying the compound was calculated by measuring the contact angles of droplets with various surface tensions, and calculated from 43 erg / cm 2 on the polysilicic acid film to 15 erg / c after applying the polymer.
It was found that m 2 and the surface energy were remarkably reduced, and the effect of preventing the adhesion between the head and the base body was great.
次に、このディスク基板とヘッドとの間に働く動摩擦係
数を測定した。動摩擦係数はヘッドに歪ゲージを連結
し、ディスクを一定速度で回転させたときに生じるヘッ
ドとディスク間の動摩擦力を測定し、これをヘッドに加
えた荷重で割ってもとめた。測定は荷重15g、滑り速度1
00mm/minの条件で行なった。その結果、動摩擦係数の値
として0.171が得られ、潤滑層を形成しない場合の0.546
に比べ動摩擦係数の値を小さくすることができた。Next, the dynamic friction coefficient acting between the disk substrate and the head was measured. The dynamic friction coefficient was determined by connecting a strain gauge to the head, measuring the dynamic friction force between the head and the disk generated when the disk was rotated at a constant speed, and dividing this by the load applied to the head. Measurement is load 15g, sliding speed 1
It was performed under the condition of 00 mm / min. As a result, 0.171 was obtained as the value of the dynamic friction coefficient, which was 0.546 when the lubricating layer was not formed.
It was possible to reduce the value of the dynamic friction coefficient as compared with.
また、この潤滑層を形成したディスク基板と荷重70gの
モノリシックヘッドを用いてディスクとヘッドの接触摩
擦試験を30000回繰り返し行なったが、ヘッドクラッシ
ュおよびヘッドによる接触摩擦によるディスクの表面状
態の変化は皆無であった。The contact friction test between the disk and the head was repeated 30000 times using a disk substrate with this lubricating layer and a monolithic head with a load of 70 g, but there was no change in the surface condition of the disk due to head crash or contact friction by the head. Met.
（実施例２） 実施例１と同様に作成しポリ珪酸被膜を形成したディス
ク基板を水平に保持し、実施例１と同様の方法で作成し
た高分子膜が存在する水面に基板表面を接触させ、水面
上の高分子膜を基板表面に移しとった（これを水平付着
法という）。それ以外は実施例１と全く同様の方法で表
面エネルギーと動摩擦係数の値を求めた。その結果、潤
滑層を塗布することにより表面エネルギーの値は43erg/
cm2から26erg/cm2に低下し、動摩擦係数の値は0.55から
0.31に小さくすることができた。(Example 2) A disk substrate prepared in the same manner as in Example 1 and having a polysilicic acid film formed thereon was held horizontally, and the substrate surface was brought into contact with the water surface on which the polymer film prepared in the same manner as in Example 1 was present. , The polymer film on the water surface was transferred to the substrate surface (this is called horizontal attachment method). Other than that, the values of the surface energy and the dynamic friction coefficient were obtained by the same method as in Example 1. As a result, the value of surface energy is 43 erg / by applying the lubrication layer.
cm 2 to 26 erg / cm 2 and dynamic friction coefficient value from 0.55
It was possible to reduce it to 0.31.
また、実施例１と同様の耐摩擦性を評価したが、30000
回の接触摩擦試験によるディスクの表面状態の変化は皆
無であった。Further, the same abrasion resistance as in Example 1 was evaluated.
There was no change in the surface condition of the disc due to the repeated contact friction test.
（実施例３） 実施例１と同様の方法で作成し、ポリ珪酸被膜を形成し
たディスク基板の上に、実施例１と同様の方法でポリ
（Ｏ−アミノアニル）の単分子膜を作成した。分子量約
3000の をフレオンに溶解し0.08重量％の溶液を作成し、0.2μ
ｍのフィルターを通して濾過した。ポリ（Ｏ−アミノア
ニル）の単分子膜を形成した前記ディスク基板にこの重
合体を2500回／分の回転速度で回転塗布し100℃の温度
で40分間焼成した後フレオンで余分な化合物を洗い落と
した。実施例１と同様の方法で表面エネルギーと動摩擦
係数の値を求めた、その結果、化合物を塗布することに
より表面エネルギーの値はポリ珪酸被膜上の43erg/cm2
から17erg/cm2に低下し、動摩擦係数の値は0.546から0.
187に小さくすることができた。Example 3 A monomolecular film of poly (O-aminoanyl) was formed on the disk substrate on which the polysilicic acid film was formed in the same manner as in Example 1 by the same method as in Example 1. Molecular weight approx.
3000's Is dissolved in Freon to make a 0.08% by weight solution, and 0.2 μ
m filter. This polymer was spin-coated on the disk substrate having a poly (O-aminoanyl) monolayer formed thereon at a rotation speed of 2500 times / minute, baked at 100 ° C. for 40 minutes, and then washed with Freon to remove excess compounds. . The values of the surface energy and the coefficient of kinetic friction were determined by the same method as in Example 1. As a result, the surface energy value was 43 erg / cm 2 on the polysilicic acid film by coating the compound.
To 17 erg / cm 2 and the coefficient of dynamic friction is 0.546 to 0.
Could be reduced to 187.
また実施例１同様に耐摩耗性を評価したが、30000回の
接触摩擦試験によるディスクの表面状態の変化は皆無で
あった。Further, the abrasion resistance was evaluated in the same manner as in Example 1, but there was no change in the surface condition of the disk due to the contact friction test of 30,000 times.
（実施例４） 実施例１と同様の方法で作成し、ポリ珪酸被膜を形成し
たディスク基盤を平行平板型のエッチング装置に入れ、
Arを用いて、流量18sccm、電力密度0.35w/cm2、圧力1.3
Pa、バイアス電位1KVの条件で２分間エッチングを行な
った後、実施例１と全く同様にして潤滑層を形成した。
その結果、表面エネルギーの値はArプラズマで処理した
後のポリ珪酸被膜上の50erg/cm2から潤滑層形成後では2
2erg/cm2とArプラズマ処理をしない場合よりもさらに低
下し、動摩擦係数の値もポリ珪酸上の0.62から潤滑層形
成後の0.24に小さくすることができた。(Example 4) A disk substrate prepared in the same manner as in Example 1 and having a polysilicic acid film formed thereon was placed in a parallel plate type etching apparatus.
Flow rate 18sccm, power density 0.35w / cm 2 , pressure 1.3 using Ar
After etching for 2 minutes under the conditions of Pa and bias potential of 1 KV, a lubricating layer was formed in exactly the same manner as in Example 1.
As a result, the surface energy value was 50 erg / cm 2 on the polysilicic acid film after Ar plasma treatment and 2 after the lubricating layer was formed.
The value of 2 erg / cm 2 was lower than that without Ar plasma treatment, and the coefficient of dynamic friction could be reduced from 0.62 on polysilicic acid to 0.24 after the formation of the lubricating layer.
また、実施例１と同様に30000回の接触摩擦試験による
ディスク表面状態の変化は皆無であった。Further, as in Example 1, there was no change in the disk surface state due to the contact friction test of 30,000 times.
（実施例５） 実施例１と同様の方法で作成したディスク基盤のCo−Ni
−Ｐ合金膜の上にポリ珪酸被膜のかわりにAl2O3（非晶
質アルミナ）をスパッタ法により被覆した。このディス
ク基盤を実施例１と全く同様の方法で潤滑層を形成し、
実施例１と同様の方法で表面エネルギー、動摩擦係数の
値を求めた。その結果、潤滑層を形成することにより、
表面エネルギーの値は45erg/cm2から20erg/cm2に低下
し、動摩擦係数の値は0.45から0.26に小さくすることが
できた。(Example 5) Disk-based Co-Ni prepared by the same method as in Example 1
Instead of the polysilicic acid coating, Al 2 O 3 (amorphous alumina) was coated on the -P alloy film by the sputtering method. A lubricating layer was formed on this disc substrate in the same manner as in Example 1,
The values of the surface energy and the coefficient of kinetic friction were determined in the same manner as in Example 1. As a result, by forming a lubricating layer,
The surface energy value decreased from 45 erg / cm 2 to 20 erg / cm 2 , and the dynamic friction coefficient value could be reduced from 0.45 to 0.26.
また、実施例１と同様に30000回の接触摩擦試験による
ディスク表面状態の変化は皆無であった。Further, as in Example 1, there was no change in the disk surface state due to the contact friction test of 30,000 times.
（発明の効果） このように本発明における磁気記憶体はヘッドと磁気記
憶体間に生じる接触摩擦力を小さくする効果が大きく、
磁気ディスク装置および磁気ドラム装置等にその応用が
期待されるものである。(Effects of the Invention) As described above, the magnetic memory according to the present invention has a large effect of reducing the contact frictional force generated between the head and the magnetic memory,
Its application is expected to magnetic disk devices and magnetic drum devices.
第１図は本発明の磁気記憶体７の断面を示す図である。 図において１は合金円盤、２は鏡面仕上げされた非磁性
合金層、３は金属磁性薄膜媒体、４は非晶質無機酸化
物、５は配向性潤滑剤層、６は保護被膜であり、非晶質
無機酸化物４と配向潤滑層５からなっている。また配向
性潤滑層５は単分子層とフッ素化化合物塗布膜からなっ
ている。FIG. 1 is a view showing a cross section of the magnetic memory body 7 of the present invention. In the figure, 1 is an alloy disk, 2 is a mirror-finished non-magnetic alloy layer, 3 is a metal magnetic thin film medium, 4 is an amorphous inorganic oxide, 5 is an oriented lubricant layer, and 6 is a protective film. It is composed of a crystalline inorganic oxide 4 and an oriented lubricating layer 5. The orientation lubricating layer 5 is composed of a monomolecular layer and a fluorinated compound coating film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 アランケントエンゲル 東京都杉並区阿佐谷北４丁目28番14―709 号 阿佐谷コーポラス (56)参考文献 特開 昭54−40606（ＪＰ，Ａ) 特開 昭62−145532（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Alan Kent Engel 4-28-14-709, Asagaya Kita, Suginami-ku, Tokyo Asaya Corpora (56) References JP-A-54-40606 (JP, A) JP-A-SHO 62-145532 (JP, A)
Claims (3)
金円盤上または表面が鏡面の合金円盤上に金属磁性薄膜
媒体が被覆されており、この上に非晶質無機酸化物層が
被覆され、さらにこの上に前記非晶質無機酸化物層と固
着可能な配向性潤滑剤が被覆されている磁気記憶体にお
いて、前記配向性潤滑剤が、一般式 で表される繰り返し単位を含む高分子の単分子層と一般
式 （r,sは０〜４までの整数） で表され、分子量が600〜30000の化合物との反応生成物
からなることを特徴とする磁気記憶体。1. A metal magnetic thin film medium is coated on an alloy disk coated with a non-magnetic alloy layer having a mirror surface or on an alloy disk having a mirror surface, and an amorphous inorganic oxide layer is provided on the medium. In the magnetic memory, which is coated and further coated with an orientational lubricant capable of sticking to the amorphous inorganic oxide layer, the orientational lubricant is represented by the general formula: A polymer monolayer containing a repeating unit represented by (R and s are integers from 0 to 4), and a magnetic memory comprising a reaction product with a compound having a molecular weight of 600 to 30,000.
金円盤上または鏡面研磨された合金円盤上に金属磁性薄
膜媒体を被覆し、この上に非晶質無機酸化物を被覆し、
さらに前記非晶質無機酸化物の上に、一般式 で表される繰り返し単位を含む高分子物質の単分子層を
ラングミュアーブロジェット（Langmuir−Blodgett）法
または水平付着法で形成した後、一般式 （r,sは０〜４までの整数） で表され、分子量が600〜30000の化合物を塗布しまたは
塗布後焼成して前記非晶質無機酸化物層と前記化合物を
結合させて表される化合物との反応生成物からなること
を特徴とする磁気記憶体。2. A metal magnetic thin film medium is coated on an alloy disk coated with a mirror-polished non-magnetic alloy layer or on a mirror-polished alloy disk, and an amorphous inorganic oxide is coated thereon.
Further on the amorphous inorganic oxide, the general formula After forming a monolayer of a polymer containing a repeating unit represented by the Langmuir-Blodgett method or the horizontal deposition method, the general formula (R and s are integers from 0 to 4) and is represented by coating the compound having a molecular weight of 600 to 30,000 or baking after coating to bond the amorphous inorganic oxide layer and the compound. A magnetic memory comprising a reaction product with a compound.
金円盤上または鏡面研磨された合金円盤上に金属磁性薄
膜媒体を被覆し、この上に非晶質無機酸化物を被覆し、
さらに前記非晶質無機酸化物の上に、一般式 で表される繰り返し単位を含む高分子物質の単分子層を
ラングミュアーブロジェット（Langmuir−Blodgett）法
または水平付着法で形成した後、一般式 （r,sは０〜４までの整数） で表され、分子量が600〜30000の化合物を塗布しまたは
塗布後焼成して前記非晶質無機酸化物層と前記化合物を
結合させることを特徴とする磁気記憶体の製造方法。3. A metal magnetic thin film medium is coated on an alloy disc coated with a mirror-polished non-magnetic alloy layer or on a mirror-polished alloy disc, and an amorphous inorganic oxide is coated thereon.
Further on the amorphous inorganic oxide, the general formula After forming a monolayer of a polymer containing a repeating unit represented by the Langmuir-Blodgett method or the horizontal deposition method, the general formula (R and s are integers from 0 to 4), and a compound having a molecular weight of 600 to 30,000 is applied or baked after the application to bond the amorphous inorganic oxide layer and the compound. Method for manufacturing magnetic storage body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61196102A JPH07107736B2 (en) | 1986-08-20 | 1986-08-20 | Magnetic storage body and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61196102A JPH07107736B2 (en) | 1986-08-20 | 1986-08-20 | Magnetic storage body and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6352320A JPS6352320A (en) | 1988-03-05 |
| JPH07107736B2 true JPH07107736B2 (en) | 1995-11-15 |
Family
ID=16352259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61196102A Expired - Lifetime JPH07107736B2 (en) | 1986-08-20 | 1986-08-20 | Magnetic storage body and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07107736B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542951A (en) * | 1977-06-09 | 1979-01-10 | Matsushita Electric Ind Co Ltd | Automatic welding equipment |
| JPS6149051A (en) * | 1984-08-13 | 1986-03-10 | 株式会社竹中工務店 | Reinforced concrete pillar for high axial force |
-
1986
- 1986-08-20 JP JP61196102A patent/JPH07107736B2/en not_active Expired - Lifetime
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|---|---|
| JPS6352320A (en) | 1988-03-05 |
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