JPH0680909B2 - Heat sink for semiconductor device - Google Patents
Heat sink for semiconductor deviceInfo
- Publication number
- JPH0680909B2 JPH0680909B2 JP14777185A JP14777185A JPH0680909B2 JP H0680909 B2 JPH0680909 B2 JP H0680909B2 JP 14777185 A JP14777185 A JP 14777185A JP 14777185 A JP14777185 A JP 14777185A JP H0680909 B2 JPH0680909 B2 JP H0680909B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- heat sink
- heat dissipation
- heat
- dissipation plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 230000017525 heat dissipation Effects 0.000 claims description 14
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
【発明の詳細な説明】 ［発明の技術的分野］ 本発明は半導体装置用放熱板に関するものである。Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to a heat sink for a semiconductor device.
［発明の技術的背景とその問題点］ 従来、半導体レーザ，高周波用ダイオード，インパット
ダイオード，ガンダイオード等の発熱性半導体素子は、
ダイヤモンド又は銅製の放熱板を介して基板上に設置さ
れていた。[Technical background of the invention and its problems] Conventionally, heat-generating semiconductor elements such as semiconductor lasers, high-frequency diodes, impat diodes, and Gunn diodes are
It was installed on the substrate via a heat sink made of diamond or copper.
しかしながら、ダイヤモンドは高価であって、かつ加工
が困難であるという問題を有し、又、銅を用いたものは
放熱効果が低いという問題を有していた。However, diamond has a problem that it is expensive and difficult to process, and that using copper has a problem that the heat dissipation effect is low.
［発明の目的］ 本発明は前記事情に鑑みて成されたものであり、低価で
あってかつ放熱効果の優れた放熱板を提供することを目
的とするものである。[Object of the Invention] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a heat dissipation plate having a low price and an excellent heat dissipation effect.
発明の概要 前記目的を達成するために本発明は、発熱性半導体素子
と基板との間に介挿される放熱板であって、燐化硼素を
主成分として構成されていることを特徴とするものであ
る。SUMMARY OF THE INVENTION In order to achieve the above object, the present invention is a heat sink inserted between a heat-generating semiconductor element and a substrate, characterized in that it is composed mainly of boron phosphide. Is.
［発明の実施例］ 以下実施例により本発明を具体的に説明する。[Examples of the Invention] The present invention will be specifically described with reference to the following examples.
第１図は放熱板を用いた半導体装置の斜視図である。同
図において１は金属製（例えば銅（Cu）製）の基板であ
り、３は半導体レーザ等の発熱性半導体素子であり、両
者間には燐化硼素（PB）を主体とする放熱板２が介挿さ
れて設置されている。ここで、基板１の縦横幅１は例
えば2mmであり、その高さh1は例えば1mmであり、放熱板
２の短辺幅l2は例えば500μｍであり、長辺幅l3は例え
ば1000μｍであり、その高さh2は例えば100μｍであ
る。又、半導体素子３の短辺幅l4は例えば250μｍであ
り、その高さは例えば150μｍである。FIG. 1 is a perspective view of a semiconductor device using a heat sink. In the figure, 1 is a metal (for example, copper (Cu)) substrate, 3 is a heat-generating semiconductor element such as a semiconductor laser, and a heat radiating plate 2 mainly composed of boron phosphide (PB) is provided between the two. Is inserted and installed. Here, the vertical and horizontal width 1 of the substrate 1 is, for example, 2 mm, the height h 1 thereof is, for example, 1 mm, the short side width l 2 of the heat dissipation plate 2 is, for example, 500 μm, and the long side width l 3 thereof is, for example, 1000 μm. And its height h 2 is, for example, 100 μm. The short side width l 4 of the semiconductor element 3 is, for example, 250 μm, and the height thereof is, for example, 150 μm.
次に第２図を参照して前記放熱板２の構造の一例を説明
する。この放熱板２は、例えば990×490μｍの縦横幅を
有する燐化硼素（BP）部材2Aの表面に例えば500Å厚の
チタニウム（Ti）部材2Bを被覆し、その上に例えば1000
Å厚の白金（Pt）部材2Cを被覆し、これを１μｍ厚の銀
（Ag）で被覆して成る。Next, an example of the structure of the heat dissipation plate 2 will be described with reference to FIG. In this heat dissipation plate 2, the surface of a boron phosphide (BP) member 2A having a vertical and horizontal width of, for example, 990 × 490 μm is coated with a titanium (Ti) member 2B having a thickness of, for example, 500Å, and then, for example, 1000
It is formed by coating a Å-thick platinum (Pt) member 2C and coating it with 1 μm-thick silver (Ag).
このような放熱板を用いれば、低価格化が達成できかつ
放熱効果の向上を図ることができる。By using such a heat dissipation plate, it is possible to reduce the cost and improve the heat dissipation effect.
［発明の効果］ 以上詳述したような本発明によれば、低価格化，放熱効
果の向上に寄与する放熱板を提供することができ、特に
発熱性半導体素子を用いた半導体装置に極めて有効であ
る。[Effects of the Invention] According to the present invention as described in detail above, it is possible to provide a heat dissipation plate that contributes to cost reduction and improvement of heat dissipation effect, and is particularly effective for a semiconductor device using a heat-generating semiconductor element. Is.
第１図は本発明の放熱板を用いた半導体装置の一例を示
す斜視図、第２図は本発明の放熱板の一例を示す横断面
図である。 １…基板、２…放熱板、2A…燐化硼素、３…半導体素
子。FIG. 1 is a perspective view showing an example of a semiconductor device using a heat dissipation plate of the present invention, and FIG. 2 is a transverse sectional view showing an example of a heat dissipation plate of the present invention. 1 ... Substrate, 2 ... Heat sink, 2A ... Boron phosphide, 3 ... Semiconductor element.
Claims (2)
る放熱板であって、燐化硼素を主成分として構成されて
いることを特徴とする半導体装置用放熱板。1. A heat sink for a semiconductor device, wherein the heat sink is interposed between a heat-generating semiconductor element and a substrate and is composed mainly of boron phosphide.
によって被覆されていることを特徴とする特許請求の範
囲第１項記載の半導体装置用放熱板。2. A heat dissipation plate for a semiconductor device according to claim 1, wherein the heat dissipation plate is covered with a stack of titanium, platinum and silver covering members.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14777185A JPH0680909B2 (en) | 1985-07-04 | 1985-07-04 | Heat sink for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14777185A JPH0680909B2 (en) | 1985-07-04 | 1985-07-04 | Heat sink for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS628600A JPS628600A (en) | 1987-01-16 |
| JPH0680909B2 true JPH0680909B2 (en) | 1994-10-12 |
Family
ID=15437808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14777185A Expired - Lifetime JPH0680909B2 (en) | 1985-07-04 | 1985-07-04 | Heat sink for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0680909B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0634402B2 (en) * | 1988-03-25 | 1994-05-02 | 工業技術院長 | Heat dissipating substrate having boron compound semiconductor and its manufacturing method |
| US7919855B2 (en) * | 2006-02-21 | 2011-04-05 | Lockheed Martin | Topside thermal management of semiconductor devices using boron phosphide contacting a gate terminal |
| JP2018060061A (en) * | 2016-10-05 | 2018-04-12 | コニカミノルタ株式会社 | Electrophotographic photoreceptor and image forming apparatus |
-
1985
- 1985-07-04 JP JP14777185A patent/JPH0680909B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS628600A (en) | 1987-01-16 |
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