JPH0733571B2 - Film forming equipment - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a film forming apparatus for forming a film on a substrate surface by using both ion beam irradiation and vacuum deposition, and particularly to improvement of a shutter thereof.

<Prior Art> As this seed film forming apparatus, there is one in which a single ion source and a single evaporation source are used to simultaneously or alternately perform ion beam irradiation and vacuum deposition. .

In recent years, in the process of forming this seed film, for example, it has been attempted to irradiate the ion beam with high energy after irradiating it with low energy at the same time as vacuum deposition.

As an apparatus of this type, for example, as shown in FIG. 5, a holder 3 for holding a substrate 2 is provided in a vacuum container 1, and the holder 3 is provided at a position substantially symmetrical with respect to a rotation center as indicated by an arrow A. A high energy ion source 4 capable of generating an ion beam 41 of relatively high energy (for example, a range of about 1 KeV to 50 KeV) and an ion beam 51 of relatively low energy (for example, a range of about 50 eV to 1 KeV). The low-energy ion source 5 to be obtained and the low-energy ion source 5 to be obtained are respectively arranged obliquely from below toward the holder 3.

The holder 3 is attached to a holder driving device 9, and the hall outside driving device 9 rotates the holder 3 as shown by an arrow A so that the surface of the substrate 2 held therein is oriented toward the high energy ion source 4 side. And the low-energy ion source 5 side, and the function of rotating the holder 3 as shown by the arrow B to rotate the substrate 2 in the plane thereof, and the angle of incidence of each ion beam is arbitrarily set. It is formed as you can.

Further, below the holder 3 in the vacuum container 1, the holder 3
Two evaporation sources 6 and 7 capable of generating evaporation substances 61 and 71, respectively, are arranged substantially symmetrically with respect to the center of rotation as indicated by arrow A in FIG. To the surface of the substrate 2 facing the 4 side,
The latter are respectively directed toward the surface of the substrate 2 which is directed to the low energy ion limit 5 side.

Then, the high-energy ion beam incident on the substrate 2
41, a low-energy ion beam 51, a vaporizer 61, and a shutter 8 for connecting and disconnecting the vaporizer 71 and the like are interposed between the holder 3 and the high-energy ion source 4, the low energy ion source 5, the vaporization source 6 and the vaporization source 7. Is provided. As shown in FIG. 6, the structure of the shutter 8 is such that a cooling pipe 87 for reducing the temperature rise due to the beam power and the radiant heat from the evaporation source is fixed to the flat shield plate 82 'by brazing. There is. The cooling pipe 87 is inserted into a pipe-shaped arm 88 and led out to the outside of the vacuum container 1, and a cooling medium such as cooling water or cooling gas is circulated inside. Then, as shown in the plan sectional view of FIG. 4, the shutter 8 is moved in parallel by a shutter drive device (not shown) provided outside the vacuum container 1 in the direction of the arrow to be opened and closed.

<Problems to be Solved by the Invention> However, according to such a configuration, the high-energy ion beam 41, the low-energy ion beam 51, and the vaporized substance 61 which are incident on the substrate 2 by forming the shutter 8 into a flat plate, In order to shield the evaporation material 71 and the like, the width dimension W of the shutter 8 shown in FIG. 6 becomes considerably large. As the width W of the shutter 8 increases, the diameter D of the vacuum container 1 increases as shown in the plan sectional view of FIG.

Further, when the shutter 8 is opened and closed in the direction of the arrow, both ends of the shield plate 82 'shown in FIG. 6 swing in the vertical direction, so that a twisting force is applied to the support fitting 86, so that the support fitting 86 is solid. Is required, and the material becomes large. Furthermore, as the diameter dimension D of the vacuum container 1 becomes larger, the arm 88 of the shutter becomes longer, so that a strong arm 88 is required, and there is a problem that the material becomes large.

<Means for Solving Problems> The film forming apparatus of the present invention is characterized in that the shutter has a surface facing each of a plurality of ion sources.

<Operation> If the shape of the shutter is such that it has surfaces facing each of a plurality of ion sources, both ends thereof are bent, and therefore the width of the shutter becomes small.

<Embodiment> FIG. 1 is a schematic view showing a film forming apparatus according to an embodiment of the present invention, and the same portions as those in FIG. 5 are designated by the same reference numerals.

Bend both ends of the shutter 8 as shown in FIG.
The bent surface faces a plurality of ion sources, for example, a high energy ion source 4 and a low energy ion source 5. By doing so, the width dimension W of the shutter 8 shown in FIG. 2 becomes smaller than the width dimension W of the shutter 8 shown in FIG. When the width dimension W of the shutter 8 becomes smaller, the diameter dimension D of the vacuum vessel 1 becomes smaller than the diameter dimension D of the vacuum vessel 1 shown in FIG. 4, as shown in the plan sectional view of FIG. When the width dimension W of the shutter 8 and the diameter dimension D of the vacuum vessel 1 become smaller, the supporting metal fitting 86 and the arm 88 of the shutter 8 in FIG. 2 are stronger than those in the flat plate shape shown in FIG. It is lighter and the material used is smaller.

In addition, as shown in FIG.
When the 81, the shielding plate 82, the shielding plate 83, and the shielding plate 84 have a combined structure, and the shielding plates 82 to 84 are detachably attached by, for example, bolts 85 or the like, when the foreign film is formed, the previous substance is attached to the shielding plate. Are adhered, and they act as impurities to adversely affect the subsequent film formation. Therefore, it is convenient that the shielding plates 82 to 84 can be easily removed during the work of removing them. Further, for example, copper having good thermal conductivity and machinability is used for the mounting plate 81, stainless steel having good machinability and relatively good thermal conductivity is used for the cooling pipe 87, and the shielding plates 82 to 84 are used. For example, if molybdenum or tantalum having a low spatter rate is used, the overall shatter has good thermal conductivity and a low spatter rate, so that the cooling effect of the shatter is large and the contamination in the vacuum container can be reduced. .

<Effects of the Invention> As described above, according to the present invention, the width dimension of the shutter is reduced, so that the diameter dimension of the vacuum vessel can be reduced, and further, the materials of the support metal fittings and arms of the shutter are also reduced. Because it is possible, it becomes economical as the device becomes smaller.

[Brief description of drawings]

FIG. 1 is a schematic view showing a film forming apparatus according to an embodiment of the present invention, and FIG. 2 is a detailed view of a shutter portion thereof, and FIG.
The figure shows a cross-sectional plan view of FIG. FIG. 5 is a schematic view showing a film forming apparatus of a conventional example, FIG. 6 is a detailed view of a shutter portion thereof, and FIG. 4 is a plan sectional view of FIG. 1 ... Vacuum container, 2 ... Substrate, 3 ... Holder, 4 ... High energy ion source, 41 ... High energy ion beam, 5 ... Low energy ion source, 51 ... Low energy ion beam, 6,7 …… Evaporation source, 61,71 …… Evaporation material,
8: Shutter, 9: Holder drive device.

Front Page Continuation (72) Inventor Satoshi Muramatsu 47 Umezu Takaunecho, Ukyo-ku, Kyoto City Kyoto Prefecture Shuichi Kageyama Examiner, Nissin Electric Co., Ltd.

Claims (1)

[Claims] 1. An apparatus for forming a film on a substrate surface by using both ion beam irradiation by an ion source and vacuum evaporation by an evaporation source in a vacuum container, and a holder provided in the vacuum container and capable of holding a substrate. , An ion beam and an evaporating substance which are incident on a substrate, each of which has a plurality of ion sources directed toward the holder from different directions to generate an ion beam, one or more evaporation sources, and a surface facing the ion source. A film forming apparatus, comprising one shutter for intermittently connecting and disconnecting.