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JPH0736320B2 - Scan conversion storage tube - Google Patents
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JPH0736320B2 - Scan conversion storage tube - Google Patents

Scan conversion storage tube

Info

Publication number
JPH0736320B2
JPH0736320B2 JP8006889A JP8006889A JPH0736320B2 JP H0736320 B2 JPH0736320 B2 JP H0736320B2 JP 8006889 A JP8006889 A JP 8006889A JP 8006889 A JP8006889 A JP 8006889A JP H0736320 B2 JPH0736320 B2 JP H0736320B2
Authority
JP
Japan
Prior art keywords
deflection plate
storage tube
conversion storage
scan conversion
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8006889A
Other languages
Japanese (ja)
Other versions
JPH02257555A (en
Inventor
裕史 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP8006889A priority Critical patent/JPH0736320B2/en
Publication of JPH02257555A publication Critical patent/JPH02257555A/en
Publication of JPH0736320B2 publication Critical patent/JPH0736320B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Electron Tubes For Measurement (AREA)

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、トランジットオシロスコープ等に用いて好適
な走査変換蓄積管に関するものである。
The present invention relates to a scan conversion storage tube suitable for use in a transit oscilloscope or the like.

〈従来の技術〉 第3図は従来の走査変換蓄積管の一例を示す構成図であ
る。
<Prior Art> FIG. 3 is a block diagram showing an example of a conventional scan conversion storage tube.

第3図に示す様に、走査変換蓄積管は電子銃11、加速管
12、四重極レンズ13、垂直偏向板14、水平偏向板15から
成る電子ビーム制御部10と蓄積ターゲット6で構成さ
れ、その動作は電荷パターンで画像又はその他の情報の
消去、書き込み、読み出しが可能である。
As shown in FIG. 3, the scan conversion storage tube is an electron gun 11 and an acceleration tube.
12, an electron beam control unit 10 including a quadrupole lens 13, a vertical deflection plate 14, and a horizontal deflection plate 15, and a storage target 6, the operation of which is to erase, write, or read an image or other information by a charge pattern. It is possible.

消去動作は蓄積ターゲット6全域を電子ビームで走査し
表面に一様に帯電させる事により行う。
The erasing operation is performed by scanning the entire area of the storage target 6 with an electron beam and uniformly charging the surface.

書き込み動作は高速電子ビームで描画する事により行
い、描画部は他の部分より電位が正になる。
The writing operation is performed by drawing with a high-speed electron beam, and the drawing part has a positive potential more than other parts.

読み出し動作は低速電子ビームで蓄積ターゲット6上を
走査する事により行い、書き込み部では電極に電流が流
れる。
The reading operation is performed by scanning the storage target 6 with a low-speed electron beam, and a current flows through the electrodes in the writing section.

〈発明が解決しようとする課題〉 しかしながら、上記従来技術に示す走査変換蓄積管にお
いては、電子ビーム制御部10を構成する四重極レンズ13
及び垂直偏向板14、水平偏向板15の形成時の位置出し及
び組み立てが困難である為、蓄積ターゲット6上を精度
良く電子ビームを走査出来ないという課題があった。
<Problems to be Solved by the Invention> However, in the scanning conversion storage tube shown in the above-mentioned prior art, the quadrupole lens 13 constituting the electron beam control unit 10 is used.
Also, since it is difficult to position and assemble the vertical deflection plate 14 and the horizontal deflection plate 15 when forming, there is a problem that the electron beam cannot be accurately scanned on the storage target 6.

本発明は、上記従来技術の課題を踏まえて成されたもの
であり、電子ビーム制御部を構成する四重極レンズ及び
垂直偏向板、水平偏向板をシリコンの微細加工により形
成する事により、四重極レンズ及び垂直偏向板、水平偏
向板の位置出しを容易とし、四重極レンズの組立精度を
向上させ、光軸のアライメントを容易にさせる為、電子
ビームを高精度に蓄積ターゲット上を走査する事が出来
る走査変換蓄積管を提供する事を目的としたものであ
る。
The present invention has been made in view of the above-mentioned problems of the prior art, and by forming the quadrupole lens, the vertical deflection plate, and the horizontal deflection plate forming the electron beam control unit by fine processing of silicon, Easily position the dipole lens, vertical deflection plate, and horizontal deflection plate, improve the assembly precision of the quadrupole lens, and facilitate alignment of the optical axis. The purpose of the present invention is to provide a scan conversion storage tube that can be used.

〈課題を解決するための手段〉 上記課題を解決する為の本発明の構成は、シリコンの異
方性エッチングにより形成しV溝加工と角形加工を施
し、このV溝加工部にポールを接合した基板を2枚重ね
合わせる事により形成された四重極レンズ及び垂直偏向
板と、シリコンの異方性エッチングにより形成し角形加
工が施された基板を2枚重ね合わせる事により形成され
た水平偏向板とをビーム軸が一致する様に接合した事を
特徴とするものである。
<Means for Solving the Problems> The structure of the present invention for solving the above problems is formed by anisotropic etching of silicon, subjected to V-groove processing and square processing, and a pole is joined to the V-groove processed portion. A quadrupole lens and a vertical deflection plate formed by stacking two substrates, and a horizontal deflection plate formed by stacking two square-shaped substrates formed by anisotropic etching of silicon. It is characterized by joining and so that the beam axes coincide with each other.

〈作用〉 この様に、シリコンの微細加工を用いると、位置出し及
び組立精度を向上する事が出来、又、光軸のアライメン
トを容易とする為、電子ビームを高精度に蓄積ターゲッ
ト上を走査する事が出来る。
<Operation> As described above, when the fine processing of silicon is used, the positioning and the assembling accuracy can be improved and the alignment of the optical axis is facilitated. Therefore, the electron beam is scanned with high accuracy on the storage target. You can do it.

〈実施例〉 以下、本発明を図面に基ずいて説明する。<Example> Hereinafter, the present invention will be described with reference to the drawings.

第1図は本発明に係わる走査変換蓄積管の一実施例を示
す構成図である。なお、第1図において第3図と同一要
素には同一符号を付して重複する説明は省略する。
FIG. 1 is a block diagram showing an embodiment of a scan conversion storage tube according to the present invention. In FIG. 1, the same elements as those in FIG. 3 are designated by the same reference numerals, and duplicate description will be omitted.

第1図において、四重極レンズ13′と垂直偏向板14′は
シリコンの異方性エッチングにより形成され、四重極レ
ンズ13′部にはV溝加工、垂直偏向板14′部には角形加
工をそれぞれ施し、このV溝加工部には8個のポール7
を接合した基板20aと20bを2枚重ね合わせる事により形
成される。なお、基板20aと20bの接合は接合面にパイレ
ックスガラス(#7740)等をスパッタリングし陽極接合
を行う事により行われる。水平偏向板15′はシリコンの
異方性エッチングにより形成され、角形加工を施した基
板30a、30bを2枚重ね合わせる事により形成され、接合
は同様に陽極接合により行われる。又、基板20a(20b)
と基板30a(30b)とはビーム軸が一致する様に接着剤等
で接合される。
In FIG. 1, the quadrupole lens 13 'and the vertical deflection plate 14' are formed by anisotropic etching of silicon. The quadrupole lens 13 'is V-grooved and the vertical deflection plate 14' is rectangular. Eight poles 7 are applied to each V-groove processed part.
It is formed by stacking two substrates 20a and 20b bonded to each other. The substrates 20a and 20b are joined by sputtering Pyrex glass (# 7740) or the like on the joint surfaces and performing anodic joining. The horizontal deflection plate 15 'is formed by anisotropic etching of silicon and is formed by stacking two square-shaped substrates 30a and 30b, and the bonding is similarly performed by anodic bonding. Also, the substrate 20a (20b)
The substrate 30a (30b) and the substrate 30a (30b) are bonded together with an adhesive or the like so that the beam axes coincide with each other.

ここで、第2図(イ)及び(ロ)に四重極レンズ13′部
の詳細を示す。
Here, details of the quadrupole lens 13 'are shown in FIGS.

第2図(イ)に示す様に、シリコンの異方性エッチング
により形成された基板20a(20b)のV溝加工部に4個の
ポール7が設置されている。21は基板20a(20b)上にp-
n接合により引き出された電極である。又、(ロ)図に
示す様に、電極21のp層とポール7との接合は、接合面
にスパッタリングされた約1μmのAl層22により電気的
接続をとって、接着剤等により接合される。
As shown in FIG. 2 (a), four poles 7 are installed in the V-groove processed portion of the substrate 20a (20b) formed by anisotropic etching of silicon. 21 is p- on the substrate 20a (20b)
It is an electrode extracted by n-junction. Further, as shown in (b), the p-layer of the electrode 21 and the pole 7 are joined by an adhesive or the like by making an electrical connection with the Al layer 22 of about 1 μm sputtered on the joining surface. It

この様な構成において、動作は従来と同様であり、図示
しない電子銃から発射され加速管により加速された電子
ビームは四重極レンズ13′、垂直偏向板14′、水平偏向
板15′を通過する事により制御され、蓄積ターゲット6
上を精度良く走査出来るものである。
In such a structure, the operation is the same as the conventional one, and the electron beam emitted from the electron gun (not shown) and accelerated by the accelerating tube passes through the quadrupole lens 13 ', the vertical deflection plate 14', and the horizontal deflection plate 15 '. Controlled by
The top can be scanned accurately.

〈発明の効果〉 以上、実施例と共に具体的に説明した様に、本発明によ
れば、電子ビーム制御部を構成する四重極レンズ及び垂
直偏向板、水平偏向板をシリコンの微細加工により形成
する事により、四重極レンズ及び垂直偏向板、水平偏向
板の位置出しを容易とし、四重極レンズの組立精度を向
上させ、光軸のアライメントを容易にさせる為、電子ビ
ームを高精度に蓄積ターゲット上を走査する事が出来
る。又、光軸のアライメントが容易となる事により安価
な走査変換蓄積管を実現する事が出来る。
<Effects of the Invention> As described above in detail with reference to the embodiments, according to the present invention, the quadrupole lens, the vertical deflection plate, and the horizontal deflection plate forming the electron beam control unit are formed by fine processing of silicon. This makes it easy to position the quadrupole lens, vertical deflection plate, and horizontal deflection plate, improves the assembly precision of the quadrupole lens, and facilitates alignment of the optical axis. It is possible to scan over the storage target. Further, since the alignment of the optical axis is facilitated, an inexpensive scan conversion storage tube can be realized.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明に係わる走査変換蓄積管の一実施例を示
す構成図、第2図は第1図の走査変換蓄積管に用いられ
る四重極レンズの詳細図、第3図は従来の走査変換蓄積
管の一例を示す構成図である。 6……蓄積ターゲット、7……ポール、13′……四重極
レンズ、14′……垂直偏向板、15′……水平偏向板、20
a、20b、30a、30b……シリコンの基板、21……電極、22
……Al層。
FIG. 1 is a block diagram showing an embodiment of a scan conversion storage tube according to the present invention, FIG. 2 is a detailed view of a quadrupole lens used in the scan conversion storage tube of FIG. 1, and FIG. It is a block diagram which shows an example of a scan conversion storage tube. 6 ... Accumulation target, 7 ... Pole, 13 '... Quadrupole lens, 14' ... Vertical deflection plate, 15 '... Horizontal deflection plate, 20
a, 20b, 30a, 30b ... Silicon substrate, 21 ... Electrode, 22
…… Al layer.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】シリコンの異方性エッチングにより形成し
V溝加工と角形加工を施し、このV溝加工部にポールを
接合した基板を2枚重ね合わせる事により形成された四
重極レンズ及び垂直偏向板と、シリコンの異方性エッチ
ングにより形成し角形加工が施された基板を2枚重ね合
わせる事により形成された水平偏向板とをビーム軸が一
致する様に接合した事を特徴とする走査変換蓄積管。
1. A quadrupole lens formed by stacking two substrates, which are formed by anisotropic etching of silicon, are subjected to V-groove processing and square processing, and have V-grooved portions bonded to poles, and a vertical pole. Scanning characterized in that a deflection plate and a horizontal deflection plate formed by stacking two square-shaped substrates formed by anisotropic etching of silicon are bonded so that their beam axes coincide with each other. Conversion storage tube.
JP8006889A 1989-03-30 1989-03-30 Scan conversion storage tube Expired - Lifetime JPH0736320B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8006889A JPH0736320B2 (en) 1989-03-30 1989-03-30 Scan conversion storage tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8006889A JPH0736320B2 (en) 1989-03-30 1989-03-30 Scan conversion storage tube

Publications (2)

Publication Number Publication Date
JPH02257555A JPH02257555A (en) 1990-10-18
JPH0736320B2 true JPH0736320B2 (en) 1995-04-19

Family

ID=13707911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8006889A Expired - Lifetime JPH0736320B2 (en) 1989-03-30 1989-03-30 Scan conversion storage tube

Country Status (1)

Country Link
JP (1) JPH0736320B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2446184B (en) * 2007-01-31 2011-07-27 Microsaic Systems Ltd High performance micro-fabricated quadrupole lens

Also Published As

Publication number Publication date
JPH02257555A (en) 1990-10-18

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