JPH0737147B2 - Thermal head and manufacturing method thereof - Google Patents
Thermal head and manufacturing method thereofInfo
- Publication number
- JPH0737147B2 JPH0737147B2 JP63295798A JP29579888A JPH0737147B2 JP H0737147 B2 JPH0737147 B2 JP H0737147B2 JP 63295798 A JP63295798 A JP 63295798A JP 29579888 A JP29579888 A JP 29579888A JP H0737147 B2 JPH0737147 B2 JP H0737147B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- oxide film
- film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000010408 film Substances 0.000 claims description 70
- 238000010438 heat treatment Methods 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 32
- 230000001681 protective effect Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 18
- 239000012790 adhesive layer Substances 0.000 claims 2
- 238000007747 plating Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Electronic Switches (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ファクシミリやプリンタ等において印字ヘッ
ドとして使用されるサーマルヘッド及びその製造方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal head used as a print head in a facsimile, a printer or the like, and a manufacturing method thereof.
〔従来の技術〕 第２図は従来のサーマルヘッドを概略的に示す断面図で
ある。[Prior Art] FIG. 2 is a sectional view schematically showing a conventional thermal head.
同図において、１は放熱マウント、２は放熱マウント１
上に備えられたグレーズドアルミナ基板、３はアルミナ
基板２上に備えられた発熱抵抗体層である。また、４は
発熱抵抗体層３上であって発熱部となる部分3aを除く範
囲に形成されたCr又はNiCrよりなる密着層、５は密着層
４上に備えられた約１μｍ厚のAu薄膜層である。さら
に、６はAu薄膜層５上に形成された数十Å厚のCr又はNi
Crよりなる酸化膜、７は発熱抵抗体３の発熱部3a上を覆
い酸化膜６上にまで広がる２〜５μｍ厚の保護膜、８は
酸化膜６上に備えられた約１μｍ厚のAuめっき膜であ
る。In the figure, 1 is a heat dissipation mount, 2 is a heat dissipation mount 1
The glaze alumina substrate 3 provided above is a heating resistor layer provided on the alumina substrate 2. Further, 4 is an adhesion layer made of Cr or NiCr formed on the heating resistor layer 3 in a range excluding the heating portion 3a, and 5 is an Au thin film having a thickness of about 1 μm provided on the adhesion layer 4. It is a layer. Further, 6 is Cr or Ni having a thickness of several tens of Å formed on the Au thin film layer 5.
An oxide film made of Cr, 7 is a protective film having a thickness of 2 to 5 μm which covers the heat generating portion 3a of the heat generating resistor 3 and spreads over the oxide film 6, and 8 is Au plating having a thickness of about 1 μm provided on the oxide film 6. It is a film.
上記酸化膜６は発熱抵抗体層３の表面を酸化させるため
及び焼戻し効果により発熱抵抗体層の抵抗値を安定化さ
せるための熱処理（300℃）の工程によって、密着層４
のCr又はNiがAu薄膜層５の中に拡散して表面で酸素と結
合して形成される層である。そして、この密着層４は保
護膜７の密着性を確保する機能を持つ。この熱処理工程
を含まなければAu薄膜層５上に直接ボンディングが可能
になるが、この場合には発熱抵抗体層３の安定化ができ
ないのみならず、Au薄膜層５と保護膜７との密着性を良
好に確保できなくなため、この工程を除くことはできな
かった。The oxide film 6 is heat-treated (300 ° C.) to oxidize the surface of the heating resistor layer 3 and to stabilize the resistance value of the heating resistor layer by a tempering effect.
Cr or Ni is a layer formed by diffusing into the Au thin film layer 5 and combining with oxygen on the surface. The adhesion layer 4 has a function of ensuring the adhesion of the protective film 7. If this heat treatment step is not included, direct bonding can be performed on the Au thin film layer 5, but in this case, not only the heating resistor layer 3 cannot be stabilized, but also the Au thin film layer 5 and the protective film 7 adhere to each other. It was not possible to exclude this step because it was not possible to secure good properties.
ところで、上記Auめっき膜８はドライバIC等のワイヤと
のボンディング性を良好に確保するための層であり、電
気メッキや無電解メッキによって形成される。Auめっき
膜８上にはドライバIC9が備えられ、そのボンディング
ワイヤ10をAuメッキ膜８に接続している。仮に、このAu
メッキ膜８がなく酸化膜６に直接ボンディングワイヤ10
を接続したとすると、Au薄膜層５との電気的接続は確保
されるが、酸化膜６が数十Åと薄いためボンディング強
度が十分得られず使用に適さないものとなる。Auめっき
膜８はこのために必要なものである。By the way, the Au plating film 8 is a layer for ensuring good bondability with a wire of a driver IC or the like, and is formed by electroplating or electroless plating. A driver IC 9 is provided on the Au plating film 8, and its bonding wire 10 is connected to the Au plating film 8. If this Au
Bonding wire 10 directly to oxide film 6 without plating film 8
, The electrical connection with the Au thin film layer 5 is secured, but since the oxide film 6 is as thin as several tens of liters, sufficient bonding strength cannot be obtained and it becomes unsuitable for use. The Au plating film 8 is necessary for this purpose.
しかしながら、上記従来例においては、ドライバIC9の
ボンディング性を良好にするためにAuめっき膜８を約１
μｍ厚に形成しているので、この分の材料コスト及び加
工コストが製品価格を上昇させるという問題があった。However, in the above conventional example, the Au plating film 8 is set to about 1 in order to improve the bonding property of the driver IC 9.
Since it is formed to a thickness of μm, there has been a problem that the material cost and the processing cost correspondingly increase the product price.
特に、浮き島パターンにワイヤボンディングをするため
には、強度上の要請から１μｍより厚い無電解厚付けめ
っきを施さなければならず、製品価格が非常に高くなる
という問題があった。In particular, in order to wire-bond the floating island pattern, there is a problem that electroless thick plating with a thickness of more than 1 μm must be applied due to the requirement of strength, resulting in a very high product price.
そこで、本発明は上記したような従来技術の課題を解決
するためになされたもので、その目的とするところは、
Au薄膜層を露出させボンディング可能領域を確保するこ
とで、製品価格の低いサーマルヘッド及びその製造方法
を提供することにある。Therefore, the present invention has been made in order to solve the problems of the above-described conventional techniques, and the purpose is to:
An object of the present invention is to provide a thermal head with a low product price and a manufacturing method thereof by exposing the Au thin film layer and securing a bondable area.
本発明に係るサーマルヘッドは、絶縁基板と、上記絶縁
基板上に備えられた発熱抵抗体層と、上記発熱抵抗体層
上の発熱部となる部分を除く所定範囲に備えらえた密着
層と、上記密着層上に備えられ、上記発熱抵抗体層上に
電流を供給するためのAu薄膜層と、上記Au薄膜層の所定
範囲が露出するように、上記Au薄膜層上に備えられ、上
記密着層を構成する金属の酸化物よりなる酸化膜と、上
記発熱抵抗体層の発熱部上と上記酸化膜上に備えられた
保護膜とを有することを特徴としている。The thermal head according to the present invention, an insulating substrate, a heating resistor layer provided on the insulating substrate, an adhesion layer provided in a predetermined range excluding a portion to be a heating portion on the heating resistor layer, Provided on the adhesion layer, an Au thin film layer for supplying a current on the heating resistor layer, and a predetermined range of the Au thin film layer are exposed so that the Au thin film layer is provided, and the adhesion is provided. It is characterized in that it has an oxide film made of a metal oxide constituting the layer, and a protective film provided on the heating portion of the heating resistor layer and on the oxide film.
また、本発明に係るサーマルヘッドの製造方法は、絶縁
基板上に発熱抵抗体層を形成する工程と、上記発熱抵抗
体層上の発熱部となる部分を除く所定範囲に密着層を形
成する工程と、上記密着層上にAu薄膜層を形成し、熱処
理により上記Au薄膜層上に上記密着層を構成する金属の
酸化物よりなる酸化膜を形成する工程と、上記発熱抵抗
体層の発熱部上と上記酸化膜上に保護膜を形成する工程
と、上記酸化膜をエッチング除去し上記Au薄膜層の所定
範囲を露出させる工程とを有することを特徴としてい
る。Further, the method of manufacturing a thermal head according to the present invention includes a step of forming a heating resistor layer on an insulating substrate and a step of forming an adhesion layer in a predetermined range on the heating resistor layer excluding a portion to be a heating portion. And a step of forming an Au thin film layer on the adhesion layer and forming an oxide film made of a metal oxide forming the adhesion layer on the Au thin film layer by heat treatment, and a heating portion of the heating resistor layer. The method is characterized by including a step of forming a protective film on the top and the oxide film, and a step of etching and removing the oxide film to expose a predetermined range of the Au thin film layer.
本発明においては、発熱抵抗体層に電流を供給するため
のAu薄膜層が所定範囲で露出するよう形成されているの
で、特別に別の層を設けることなく、ドライバIC等のボ
ンディング可能領域が確保されている。In the present invention, since the Au thin film layer for supplying a current to the heating resistor layer is formed so as to be exposed in a predetermined range, a bondable area such as a driver IC can be formed without providing another layer. Has been secured.
また、本発明の製造方法においては、Au薄膜層上に酸化
膜を形成し、発熱抵抗体層の発熱部上と酸化膜上に保護
膜を形成した後に、逆スパッタリング等のエッチングに
より酸化膜を除去するので、酸化膜は保護膜の形成され
ない範囲で除去される。従って、保護膜は密着性の良好
な酸化膜と密着することとなる。Further, in the manufacturing method of the present invention, an oxide film is formed on the Au thin film layer, and after forming a protective film on the heating portion and the oxide film of the heating resistor layer, the oxide film is formed by etching such as reverse sputtering. Since it is removed, the oxide film is removed in a range where the protective film is not formed. Therefore, the protective film comes into close contact with the oxide film having good adhesion.
以下に本発明を図示の実施例に基づいて説明する。 The present invention will be described below based on the illustrated embodiments.
第１図は本発明に係るサーマルヘッドの一実施例を示す
概略断面図である。同図において、第２図と同一の構成
部分には同一の符号を付して説明する。即ち、１は放熱
マウント、２はグレーズドアルミナ基板（絶縁基板）、
３は発熱抵抗体層、４は発熱抵抗体層３の発熱部となる
部分3aを除く領域に形成されたCr又はNiCrよりなる密着
層、５は約１μｍ厚のAu薄膜層である。また、６はCr又
はNiCrの酸化膜、７は発熱抵抗体３の発熱部3a上を覆い
酸化膜６上にまで広がる２〜５μｍ厚の保護膜である。FIG. 1 is a schematic sectional view showing an embodiment of the thermal head according to the present invention. In the figure, the same components as those in FIG. 2 are designated by the same reference numerals and described. That is, 1 is a heat dissipation mount, 2 is a glazed alumina substrate (insulating substrate),
Reference numeral 3 is a heating resistor layer, 4 is an adhesion layer made of Cr or NiCr formed in a region of the heating resistor layer 3 excluding a portion 3a which is a heating portion, and 5 is an Au thin film layer having a thickness of about 1 μm. Further, 6 is an oxide film of Cr or NiCr, and 7 is a protective film having a thickness of 2 to 5 μm which covers the heat generating portion 3a of the heat generating resistor 3 and spreads over the oxide film 6.
そして、上記構成のサーマルヘッドは以下のように製造
される。The thermal head having the above structure is manufactured as follows.
先ず、グレーズドアルミナ基板２上にスパッタリング法
又は蒸着法により発熱抵抗体層３、その上に密着層４、
さらにその上にAu薄膜層５を形成する。First, a heating resistor layer 3 is formed on a glaze alumina substrate 2 by a sputtering method or an evaporation method, and an adhesion layer 4 is formed thereon.
Further, the Au thin film layer 5 is formed thereon.
次に、発熱抵抗体層３の安定化のための熱処理（300
℃）を施す。このとき密着層４のCrがAu薄膜層５の中に
拡散して表面で酸素と結合して酸化膜６が形成される。
この層は保護膜７の密着性を良好にする働きを持つ。Next, heat treatment for stabilizing the heating resistor layer 3 (300
℃). At this time, Cr of the adhesion layer 4 diffuses into the Au thin film layer 5 and combines with oxygen on the surface to form an oxide film 6.
This layer has a function of improving the adhesion of the protective film 7.
次に、スパッタリング法又は蒸着法により発熱抵抗体層
３の発熱部３上と酸化膜６上に保護膜７を形成する。Next, a protective film 7 is formed on the heating portion 3 of the heating resistor layer 3 and the oxide film 6 by the sputtering method or the vapor deposition method.
その後、酸化膜６を逆スパッタリングによりエッチング
して除去し、酸化膜６が除去された部分にAu薄膜層５を
露出させる。ここで、逆スパッタリングにより保護膜７
も僅かに除去されるが、保護膜７の厚さに比べ小さく機
能は損なわれない。また、酸化膜３の除去方法としては
逆スパッタリング法が適しているが硝酸第二セリウムア
ンモニウム溶液によっても除去できる。After that, the oxide film 6 is removed by etching by reverse sputtering, and the Au thin film layer 5 is exposed at the portion where the oxide film 6 is removed. Here, the protective film 7 is formed by reverse sputtering.
Although it is also slightly removed, it is smaller than the thickness of the protective film 7 and its function is not impaired. Although the reverse sputtering method is suitable as a method for removing the oxide film 3, it can also be removed by using a solution of ceric ammonium nitrate.
上記工程により製造されたサーマルヘッドは、Au薄膜層
５を露出させているので、ドライバIC9のボンディング
ワイヤ10を直接Au薄膜層５に取り付けることができる。
従って、第２図に示す従来例のように酸化膜上にAuめっ
き膜を備える必要がなく、材料コスト及び加工コストが
節約できるので、製品価格の大幅な低減を図ることがで
きる。In the thermal head manufactured by the above process, the Au thin film layer 5 is exposed, so that the bonding wire 10 of the driver IC 9 can be directly attached to the Au thin film layer 5.
Therefore, unlike the conventional example shown in FIG. 2, it is not necessary to provide the Au plating film on the oxide film, and the material cost and the processing cost can be saved, so that the product price can be significantly reduced.
また、本実施例の製造方法においては、Au薄膜層５上に
酸化膜６を形成し、発熱部3a上と酸化膜６上に保護膜７
を形成した後に、エッチングにより酸化膜６を除去する
ので、酸化膜６は保護膜７の形成されない範囲で除去さ
れる。従って、保護膜を密着性の良好な酸化膜と密着さ
せることができる。尚、逆スパッタリングによるエッチ
ングレートは高いためエッチングに要する加工時間は短
く加工コストへの影響は極めて小さい。In addition, in the manufacturing method of this embodiment, the oxide film 6 is formed on the Au thin film layer 5, and the protective film 7 is formed on the heating portion 3a and the oxide film 6.
Since the oxide film 6 is removed by etching after the formation of the oxide film, the oxide film 6 is removed in a range where the protective film 7 is not formed. Therefore, the protective film can be brought into close contact with the oxide film having good adhesion. Since the etching rate by reverse sputtering is high, the processing time required for etching is short and the effect on the processing cost is extremely small.
〔発明の効果〕 以上説明したように、本発明によれば、ドライバICのボ
ンディングワイヤ等を直接Au薄膜層に取り付けることが
できるので、従来のように酸化膜上に別にAuめっき膜を
備える必要がなく、その分材料コスト及び加工コストが
節約でき、製品価格の低減を図ることができる。[Effects of the Invention] As described above, according to the present invention, the bonding wire of the driver IC or the like can be directly attached to the Au thin film layer. Therefore, the material cost and the processing cost can be saved correspondingly, and the product price can be reduced.
また、本発明の製造方法によれば、Au薄膜層上に酸化膜
を形成し、発熱部上と酸化膜上に保護膜を形成した後
に、保護膜の形成されない範囲で酸化膜を除去するの
で、保護膜の良好な密着性を確保できる。尚、本発明の
製造方法はエッチング工程が加えられており、その加工
コストがかかるが、従来のAuめっき膜形成工程に比べて
極めて小さく、全体としてみれば製品価格を大幅に低減
できる。Further, according to the manufacturing method of the present invention, since the oxide film is formed on the Au thin film layer and the protective film is formed on the heating portion and the oxide film, the oxide film is removed in the range where the protective film is not formed. Good adhesion of the protective film can be secured. Incidentally, the manufacturing method of the present invention has an etching step added thereto, which requires a processing cost, but is much smaller than the conventional Au plating film forming step, and the product price can be greatly reduced as a whole.
第１図は本発明に係るサーマルヘッドの一実施例を示す
概略断面図、 第２図は従来のサーマルヘッドを示す概略断面図であ
る。 ２……グレーズドアルミナ基板（絶縁基板）、 ３……発熱抵抗体層、 ４……密着層、 ５……Au薄膜層、 ６……酸化膜、 ７……保護膜。FIG. 1 is a schematic sectional view showing an embodiment of a thermal head according to the present invention, and FIG. 2 is a schematic sectional view showing a conventional thermal head. 2 ... Glazed alumina substrate (insulating substrate), 3 ... Heating resistor layer, 4 ... Adhesion layer, 5 ... Au thin film layer, 6 ... Oxide film, 7 ... Protective film.
Claims (2)
に備えられた密着層と、 上記密着層上に備えられ、上記発熱抵抗体層上に電流を
供給するためのAu薄膜層と、 上記Au薄膜層の所定範囲が露出するように上記Au薄膜層
上に備えられ、上記密着層を構成する金属の酸化物より
なる酸化膜と、 上記発熱抵抗体層の発熱部上と上記酸化膜上に備えられ
た保護膜とを有することを特徴とするサーマルヘッド。1. An insulating substrate, a heating resistor layer provided on the insulating substrate, an adhesion layer provided in a predetermined range on the exothermic low antibody layer excluding a portion to be a heat generating portion, and the adhesion layer. An Au thin film layer that is provided on the heating thin film resistor layer and supplies a current to the heating resistor layer, and is provided on the Au thin film layer so that a predetermined range of the Au thin film layer is exposed, and constitutes the adhesion layer. A thermal head comprising: an oxide film made of a metal oxide; and a protective film provided on the heating portion of the heating resistor layer and on the oxide film.
と、 上記発熱抵抗体層上の発熱部となる部分を除く所定範囲
に密着層を形成する工程と、 上記密着層上にAu薄膜層を形成し、熱処理により上記Au
薄膜層上に上記密着層を構成する金属の酸化物よりなる
酸化膜を形成する工程と、 上記発熱抵抗体層の発熱部上と上記酸化膜上に保護膜を
形成する工程と、 上記酸化膜をエッチング除去し上記Au薄膜層の所定範囲
を露出させる工程とを有することを特徴とするサーマル
ヘッドの製造方法。2. A step of forming a heat-generating resistor layer on an insulating substrate, a step of forming an adhesive layer in a predetermined range on the heat-generating resistor layer excluding a portion to be a heat-generating portion, and Au on the adhesive layer. After forming a thin film layer, heat treatment
A step of forming an oxide film made of a metal oxide forming the adhesion layer on the thin film layer, a step of forming a protective film on the heating portion of the heating resistor layer and the oxide film, and the oxide film Is removed by etching to expose a predetermined area of the Au thin film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63295798A JPH0737147B2 (en) | 1988-11-22 | 1988-11-22 | Thermal head and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63295798A JPH0737147B2 (en) | 1988-11-22 | 1988-11-22 | Thermal head and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02141262A JPH02141262A (en) | 1990-05-30 |
| JPH0737147B2 true JPH0737147B2 (en) | 1995-04-26 |
Family
ID=17825300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63295798A Expired - Lifetime JPH0737147B2 (en) | 1988-11-22 | 1988-11-22 | Thermal head and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0737147B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100910679B1 (en) * | 2004-11-04 | 2009-08-04 | 로무 가부시키가이샤 | Thermal print head and method for manufacturing same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7697020B2 (en) | 2004-11-04 | 2010-04-13 | Rohm Co., Ltd. | Thermal print head and method for manufacturing same |
| WO2012086558A1 (en) * | 2010-12-25 | 2012-06-28 | 京セラ株式会社 | Thermal head and thermal printer comprising same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS589570B2 (en) * | 1979-12-24 | 1983-02-22 | 富士通株式会社 | Thermal head manufacturing method |
-
1988
- 1988-11-22 JP JP63295798A patent/JPH0737147B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100910679B1 (en) * | 2004-11-04 | 2009-08-04 | 로무 가부시키가이샤 | Thermal print head and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02141262A (en) | 1990-05-30 |
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