JPH073844B2 - Heat transfer device - Google Patents
Heat transfer deviceInfo
- Publication number
- JPH073844B2 JPH073844B2 JP61191650A JP19165086A JPH073844B2 JP H073844 B2 JPH073844 B2 JP H073844B2 JP 61191650 A JP61191650 A JP 61191650A JP 19165086 A JP19165086 A JP 19165086A JP H073844 B2 JPH073844 B2 JP H073844B2
- Authority
- JP
- Japan
- Prior art keywords
- heat transfer
- heat
- transfer device
- transfer body
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/877—Bump connectors and die-attach connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、電子計算機用集積回路等の高発熱密度部材の
冷却に適した熱伝達装置に関する。The present invention relates to a heat transfer device suitable for cooling a high heat density member such as an integrated circuit for an electronic computer.
集積回路チップを低い沸点を有する冷却液中に浸漬し、
上記チップから発生する熱により、上記冷却液の沸騰を
発生させ、該チップを冷却する方式が知られている。こ
の沸騰冷却を促進する方式として、一辺の長さが0.2〜2
mm程度の微細なトンネル状の空洞を縦横に互いに交差し
て幾層にも形成し、ある層に配置された多数の空洞群
と、それに隣接する空洞群とは該空洞の交差点に設けら
れた開口によって互いに連結している多孔性を有する伝
熱体を設けた熱伝達装置が、W.中山著.ヒート・シンク
・スタド・ハビング・エンハンスド・ボイリング・サー
フェイス・フォー・クーリング・オブ・マイクロエレク
トロニック・コンポーネント(W.Nakayama,et al.“Hea
t SinkStuds Having Enhanced Boiling Surfaces for c
ooling of Microelectronic components")にて論じら
れている。Immersing the integrated circuit chip in a coolant with a low boiling point,
A method is known in which the cooling liquid is boiled by the heat generated from the chips to cool the chips. As a method to promote this boiling cooling, the length of one side is 0.2 to 2
Small tunnel-shaped cavities of about mm are formed in multiple layers by crossing each other vertically and horizontally, and a large number of cavities arranged in a certain layer and cavities adjacent to the cavities are provided at intersections of the cavities. A heat transfer device provided with a porous heat transfer body connected to each other by openings is described by W. Nakayama. Heat sink studd hubbing enhanced boiling surface for cooling of microelectronic components (W.Nakayama, et al. “Hea
t SinkStuds Having Enhanced Boiling Surfaces for c
ooling of Microelectronic components ").
この熱伝達装置は、非常に高い沸騰熱伝達率を有するた
め、集積回路チップなどの高発熱密度部材の冷却に適し
たものである。しかし、基板上に多数搭載されたチップ
に、それぞれ同形の熱伝達装置を取り付けた場合、互い
に発熱量の異なるチップの温度を均一に保つ方式につい
ては考慮されていなかった。Since this heat transfer device has a very high boiling heat transfer coefficient, it is suitable for cooling a high heat density member such as an integrated circuit chip. However, when a plurality of chips mounted on a substrate are fitted with heat transfer devices of the same shape, no consideration has been given to a method of keeping the temperatures of the chips having different heat generation amounts uniform.
また、従来提案されている集積回路チップの沸騰冷却装
置の1つは、多数のチップを搭載した配線基板を絶縁性
液に浸漬し、チップからの発熱により、該液から発生し
た蒸気泡が上昇して配線基板上部に設けられる凝縮器に
至り、この凝縮器で凝縮されて下部の液中に還元される
ものである。しかし、この方式では、チップの発熱量が
互いに異なる場合、あるいは、発熱量が同一でも配線基
板の下部に搭載されたチップから発生する蒸気泡が、上
部に搭載されるチップからの発泡に影響を与え、伝熱性
能を変化させ、チップの温度を均一にすることはできな
かった。なお、この種の装置に関連するものには例え
ば、特公昭52−15358号等が挙げられる。In addition, one of the boiling cooling devices for integrated circuit chips that has been conventionally proposed is to immerse a wiring board on which a large number of chips are mounted in an insulating liquid, and the heat generated from the chips causes vapor bubbles generated from the liquid to rise. Then, it reaches the condenser provided on the upper part of the wiring board, is condensed by this condenser and is reduced to the liquid in the lower part. However, in this method, when the heat values of the chips are different from each other, or even if the heat values are the same, the vapor bubbles generated from the chips mounted on the lower part of the wiring board affect the foaming from the chips mounted on the upper part. It was not possible to make the temperature of the chips uniform by changing the heat transfer performance. Examples of devices related to this type of device include Japanese Patent Publication No. 52-15358.
上記従来技術は、配線基板上に搭載された多数のチップ
の温度を、各チップの発熱量にかかわらず、すべてのチ
ップ温度を均一に保つ方式については考慮されていなか
った。その為、発熱量によって各チップの温度にばらつ
きが生じ、素子の動作速度を均一にすることができなか
った。そこで、各チップの温度を均一に保つためには、
各チップに取りつける熱伝達部材の形状(熱伝達機能)
を発熱量に応じて変更する必要があった。The above-mentioned prior art does not consider a method of keeping the temperature of a large number of chips mounted on a wiring board uniform regardless of the heat generation amount of each chip. Therefore, the temperature of each chip varies depending on the amount of heat generation, and the operating speed of the element cannot be made uniform. Therefore, in order to keep the temperature of each chip uniform,
Shape of heat transfer member attached to each chip (heat transfer function)
Had to be changed according to the calorific value.
本発明の目的は、各発熱体の各発熱量のいかんにかかわ
らず、熱伝達装置の形状をかえることなく、各チップの
伝熱性能を制御し、各発熱体の温度をあらかじめ設定し
た最適温度に保持することにある。The object of the present invention is to control the heat transfer performance of each chip without changing the shape of the heat transfer device, regardless of the heat generation amount of each heat generating element, and to set the temperature of each heat generating element to an optimum temperature which is set in advance. To hold in.
上記目的は、複数個の発熱体に接合される伝熱体を同一
形状に形成し、伝熱面を各発熱体の発熱量に応じた面積
の被覆部材で覆い、伝熱体の伝熱面積を上記発熱量に応
じ変化させることにより達成される。The above-mentioned purpose is to form a heat transfer element joined to a plurality of heat generating elements in the same shape, and cover the heat transfer surface with a covering member having an area corresponding to the heat generation amount of each heat generating element. Is achieved according to the amount of heat generation.
〔作用〕 各発熱体に接合された各伝熱体を、各発熱体の伝熱面積
を発熱量に応じて変化させ、設定冷却温度に必要とする
冷却能力を各伝熱体に備えさせるように形成したから、
各発熱体の発熱量にかかわらず各発熱体温度を設定温度
に冷却することが出来る。[Operation] Each heat transfer element joined to each heat generating element is changed in accordance with the amount of heat generation of the heat transfer area of each heat generating element so that each heat transfer element has the cooling capacity required for the set cooling temperature. Because it was formed into
The temperature of each heating element can be cooled to the set temperature regardless of the amount of heat generated by each heating element.
以下本発明の一実施例を第1図乃至第5図により説明す
る。第2図において、1は集積回路を組付ける配線基板
で、この基板1には、発熱体2として多数個の集積回路
用の半導体チップが組付けられている。3はチップ冷却
用の伝熱体で、チップ2の背面に取付けられている。伝
熱体3は後述のトンネル状の微細通路が形成されている
微細トンネル部材31を、複数個積層して形成され、この
伝熱体3の先端にはキャップ4がかぶせられている。An embodiment of the present invention will be described below with reference to FIGS. In FIG. 2, reference numeral 1 is a wiring board on which an integrated circuit is assembled. On this board 1, a large number of semiconductor chips for integrated circuits are assembled as heating elements 2. A heat transfer member 3 for cooling the chip is attached to the back surface of the chip 2. The heat transfer body 3 is formed by laminating a plurality of fine tunnel members 31 each having a tunnel-shaped fine passage, which will be described later, and a cap 4 is placed on the tip of the heat transfer body 3.
上記微細トンネル部材31を、第3図に示す。微細トンネ
ル部材31の微細フィン32,33は、熱伝導性の薄板の表裏
両側より互いに交差する方向に溝34,35を設けることに
よって作る。溝34,35の深さの和は薄板の肉厚よりも大
きく形成され、したがって、両溝34,35の交差点には、
それぞれの溝を連通させる交差開孔36が形成されてい
る。溝形状は、方形,円形,三角形などいずれの形状で
あってもよい。また、材質は、銅,アルミニウムなどの
高熱伝導性材が望ましい。微細トンネル部材31を多層に
複数枚重ね合せ接合し、キャップで被覆したものを第4
図に示す。第3図に示した溝34および35は、トンネル状
の空洞となり、それぞれ鉛直方向トンネル41および水平
トンネル42を形成し、それぞれのトンネル41,42は交差
開孔36により連通している。4はキャップを示す。The fine tunnel member 31 is shown in FIG. The fine fins 32, 33 of the fine tunnel member 31 are formed by providing grooves 34, 35 on both sides of the heat conductive thin plate in a direction intersecting with each other. The sum of the depths of the grooves 34, 35 is formed to be larger than the thickness of the thin plate, and therefore, at the intersection of the grooves 34, 35,
Cross openings 36 are formed to connect the grooves. The groove shape may be any shape such as a square, a circle, and a triangle. Further, the material is preferably a highly heat conductive material such as copper or aluminum. The fine tunnel member 31 is laminated in a plurality of layers and joined together and covered with a cap.
Shown in the figure. The grooves 34 and 35 shown in FIG. 3 form a tunnel-shaped cavity to form a vertical tunnel 41 and a horizontal tunnel 42, respectively, and the tunnels 41 and 42 are communicated with each other by a cross opening 36. 4 shows a cap.
上記構造の伝熱体3は取付けた半導体チップ2が多数組
付けられた配線基板を冷却する熱伝達装置の全体構造を
第1図に示す。FIG. 1 shows the entire structure of a heat transfer device for cooling a wiring board having a large number of mounted semiconductor chips 2 in the heat transfer body 3 having the above structure.
伝熱体3を取付けた半導体チップ2は配線用基板1に多
数組付けられている。この半導体チップを搭載した基板
1は容器5に充填された冷却液6中に垂直方向に適宜間
隔をおいて、複数個並べて浸漬収納されている。上記冷
却液6は、低い沸点を有する絶縁性液である。この液体
は比較的低い温度において沸騰を生じ、半導体チップ2
からの熱流量が小さい場合は、液体の沸点以下の温度を
生じ、通常の対流を生じる。熱流量が液体の沸点を越え
る温度にまで達すると、核沸点が起る。伝熱体3の微細
トンネル部材31(第4図参照)の微細トンネル壁で蒸発
した気泡は、鉛直方向の鉛直方向トンネル41を通して外
部に抜ける。上記作用に追従して、微細トンネル部材31
の外表面に開口するトンネル入口から液がトンネル部材
31内へ取り込まれる。この液は、水平方向に向く水平方
向トンネル42及び交差トンネルを連通する開孔36を通し
て微細トンネル部材31内部全領域に供給される。さら
に、水平方向トンネル42は壁で発生する蒸気の一部を保
持することができ、これが次の発泡のおこる核として働
らき、発泡を連続的に起こさせる。ここで、トンネルの
総数すなわち微細トンネル部材31の積層数である伝熱体
高さとチップ発熱量との関係は、第5図に示すように、
チップ温度を同一に保つとき、伝熱体の高さが高いほ
ど、即ち、伝熱に寄与するトンネル構造部分が大きいほ
ど発熱量が大きくとれることが実験及び計算によって明
らかになっている。そこで、第2図に示すように、積層
数が一定であっても、伝熱体3の一部をキャップ4でお
おうことによって、上記で説明した蒸気抜け、液の導入
作用を阻止し、層数が少ない場合と同様な効果を得るこ
とができる。また、キャップ4の長さlcを変えて伝熱体
を覆う部分を調整することによって伝熱性能を任意に制
御することができる。A large number of semiconductor chips 2 to which the heat transfer bodies 3 are attached are assembled to the wiring board 1. A plurality of substrates 1 on which the semiconductor chips are mounted are dipped and housed in a cooling liquid 6 filled in a container 5 side by side at appropriate intervals in the vertical direction. The cooling liquid 6 is an insulating liquid having a low boiling point. This liquid causes boiling at a relatively low temperature, and the semiconductor chip 2
If the heat flow from the is low, a temperature below the boiling point of the liquid is generated and normal convection occurs. A nuclear boiling point occurs when the heat flow reaches a temperature above the boiling point of the liquid. The bubbles evaporated on the fine tunnel wall of the fine tunnel member 31 (see FIG. 4) of the heat transfer body 3 escape to the outside through the vertical tunnel 41 in the vertical direction. Following the above action, the fine tunnel member 31
Liquid enters the tunnel member from the tunnel inlet opening on the outer surface of the
It is taken into 31. The liquid is supplied to the entire area inside the fine tunnel member 31 through the horizontal tunnel 42 that faces the horizontal direction and the opening 36 that connects the crossing tunnel. In addition, the horizontal tunnel 42 can hold some of the vapor generated at the wall, which acts as a nucleus for the next bubbling, causing bubbling to continue. Here, the relationship between the heat transfer body height, which is the total number of tunnels, that is, the number of stacked fine tunnel members 31, and the heat generation amount of the chip is as shown in FIG.
Experiments and calculations have shown that when the chip temperature is kept the same, the higher the height of the heat transfer body, that is, the larger the tunnel structure portion that contributes to heat transfer, the larger the amount of heat generation. Therefore, as shown in FIG. 2, even if the number of stacked layers is constant, by covering a part of the heat transfer body 3 with the cap 4, the vapor escape and the liquid introduction action described above are prevented, The same effect as when the number is small can be obtained. Also, the heat transfer performance can be arbitrarily controlled by changing the length lc of the cap 4 and adjusting the portion covering the heat transfer body.
チップ2に取付けられた伝熱体3は全て同一形状であ
り、先端部にかぶせたキャップ4は半導体チップ2の発
熱量に応じた長さを有する。All the heat transfer members 3 attached to the chip 2 have the same shape, and the cap 4 placed on the tip has a length corresponding to the amount of heat generated by the semiconductor chip 2.
伝熱体3はキャップ4によって、有効電熱面積が部分的
に減少するため、この被覆面積の大小によって伝熱性能
が変化し、半導体チップ3の発熱量が異っても設定温度
を保つことができる。従って、本実施例によれば、配線
基板1上に発熱量の異なるチップが混在する場合、発熱
量の小さいチップの伝熱体には長さlcの大きいキャップ
を、発熱量の大きいチップの伝熱体には長さlcの小さい
キャップをかぶせることによって、伝熱体の微細構造の
形状、寸法等を変更することなく伝熱性能を制御でき、
各チップの温度を設定された最適温度に冷却することが
出来、各チップの温度をほぼ均一に保持することが出来
る。さらに、伝熱体の製造に際して、各伝熱体自体の性
能のばらつき、配線基板上へのチップ搭載位置にかかわ
る電熱体相互の発泡気泡の干渉により、伝熱性能にばら
つきが生じても、これらのばらつきを吸収することが出
来る。キャップ4の材質は容器5内の絶縁性液6に侵さ
れない材質であれば、樹脂等の安価で加工の容易なもの
を使用することが出来る。Since the effective heat transfer area of the heat transfer body 3 is partially reduced by the cap 4, the heat transfer performance is changed depending on the size of the covering area, and the set temperature can be maintained even if the heat generation amount of the semiconductor chip 3 is different. it can. Therefore, according to the present embodiment, when chips having different heat generation amounts are mixed on the wiring board 1, a cap having a large length lc is attached to a heat transfer body of a chip having a small heat generation amount, and a cap of a chip having a large heat generation amount is transferred. By covering the heat element with a cap with a small length lc, the heat transfer performance can be controlled without changing the shape and dimensions of the microstructure of the heat transfer element.
The temperature of each chip can be cooled to the set optimum temperature, and the temperature of each chip can be kept substantially uniform. Furthermore, when manufacturing the heat transfer body, even if the heat transfer performance varies due to the dispersion of the performance of each heat transfer body itself and the interference of foam bubbles between the electric heat bodies related to the chip mounting position on the wiring board, It is possible to absorb the variation of. As the material of the cap 4, a material such as resin that is inexpensive and easy to process can be used as long as it is a material that is not attacked by the insulating liquid 6 in the container 5.
第6図は、本発明の他の実施例を示す。本実施例は、伝
熱体3の一部にテープ14を巻きつけることによって、伝
熱体3の機能を減少させ、前記実施例と同様な効果を得
るものである。FIG. 6 shows another embodiment of the present invention. In this embodiment, the tape 14 is wound around a part of the heat transfer body 3 to reduce the function of the heat transfer body 3 and obtain the same effect as that of the above embodiment.
伝熱性能の制御は、テープ14の幅ltを発熱量に応じて変
化させることによって行うことができる。即ち、発熱量
の小さいチップの伝熱体には幅ltの大きいテープを、発
熱量の大きいチップの伝熱体には幅ltの小さいテープを
巻きつけることによって伝熱性能を制御することができ
る。テープは必ずしも伝熱体3の全周に巻きつける必要
はなく、被覆面のごく一部にはりつけることによって、
細かに伝熱性能を制御することが出来る。図に示すよう
に、伝熱体3上のテープ14を巻く位置を隣り合う伝熱体
で変える、即ち、図示のように、テープ14を巻く位置
を、先端部,根元部と交互に配置することによって、伝
熱体外表面のトンネル入口部での発泡気泡の影響を直接
受けないようにし、伝熱体3から放出された気泡が、直
接上段の伝熱体3のトンネル流路へ入らないようにし、
上昇気泡流路内での気泡と液との混合を平均化し、上昇
気泡の影響による伝熱体の性能ばらつきをおさえること
ができる。なお、テープ14の材質は、絶縁性液に侵され
ないものであればよく、任意のものを選択できる。The heat transfer performance can be controlled by changing the width lt of the tape 14 according to the amount of heat generation. That is, the heat transfer performance can be controlled by wrapping a tape having a large width lt around the heat transfer body of the chip having a small heat generation amount and a tape having a small width lt around the heat transfer body of the chip having a large heat generation amount. . The tape does not necessarily have to be wrapped around the entire circumference of the heat transfer body 3, but by sticking it on a small part of the coated surface,
The heat transfer performance can be finely controlled. As shown in the figure, the winding position of the tape 14 on the heat transfer body 3 is changed by the adjacent heat transfer body, that is, as shown in the drawing, the winding position of the tape 14 is alternately arranged with the tip and the root. By doing so, the influence of foam bubbles at the tunnel entrance of the outer surface of the heat transfer body is not directly affected, and the bubbles discharged from the heat transfer body 3 do not directly enter the tunnel flow path of the heat transfer body 3 in the upper stage. West,
It is possible to average the mixing of the bubbles and the liquid in the rising bubble channel, and suppress the performance variation of the heat transfer body due to the influence of the rising bubbles. The tape 14 may be made of any material as long as it is not attacked by the insulating liquid.
また、伝熱体3の被覆はテープに限らず、半田ろう,接
着剤等をトンネル流路に充填し、伝熱面の伝熱作用を減
少させるように形成してもよい。本実施例によれば、半
導体,チップの発熱量に応じた伝熱面積を確保するた
め、上述のように、テープ,半田ろう,接着剤等による
極めて簡単な構造で各半導体チップの温度を均一に保持
することが出来る。Further, the coating of the heat transfer body 3 is not limited to the tape, but may be formed by filling the tunnel flow path with solder brazing, adhesive or the like so as to reduce the heat transfer action of the heat transfer surface. According to the present embodiment, in order to secure the heat transfer area corresponding to the heat generation amount of the semiconductor and the chip, as described above, the temperature of each semiconductor chip is made uniform by the extremely simple structure of the tape, the soldering solder, the adhesive and the like. Can be held at.
第7図は更に他の実施例を示す。この実施例は、半導体
チップを空冷によって冷却する実施例である。FIG. 7 shows still another embodiment. In this embodiment, the semiconductor chip is cooled by air cooling.
基板1上に組付けられた多数個の半導体チップ2の上壁
面にフィン部材23を固着する。チップ2の発熱温度に応
じ、フィン部材23のフィン間の一部をキャップ24あるい
は第8図に示すように、テープ25で覆うことによって、
フィン間を流れる空気の流路をふさぐ。チップ2の発熱
量に応じて、キャップ24あるいはテープ25によってフィ
ン間をふさぐ面積を変化させることによって伝熱性能を
制御でき、チップ2の温度を均一に保つことができる。
フィン部材23へのキャップあるいはテープの取り付け方
式としては第7図に示すように、フィンの一部を完全に
覆う方式、第8図に示すように、フィン部材23全体にわ
たりその一部を覆う方式等をとることができる。A fin member 23 is fixed to the upper wall surface of a large number of semiconductor chips 2 assembled on the substrate 1. Depending on the heat generation temperature of the chip 2, by covering a part between the fins of the fin member 23 with a cap 24 or a tape 25 as shown in FIG.
It blocks the flow path of the air that flows between the fins. The heat transfer performance can be controlled by changing the area that closes the fins with the cap 24 or the tape 25 according to the heat generation amount of the chip 2, and the temperature of the chip 2 can be kept uniform.
As a method of attaching the cap or tape to the fin member 23, a method of completely covering a part of the fin as shown in FIG. 7 and a method of covering a part of the fin member 23 as a whole as shown in FIG. Etc. can be taken.
本発明によれば、基板上に発熱量の異なる発熱体が混在
して取付けられていても、各発熱体に接合する各伝熱体
は、形状,寸法等を変更することなく、伝熱性能を可変
とし、それぞれの発熱量に応じて、冷却能力を制御でき
るので、各発熱体の温度を設定温度に均一に保持するこ
とができる。According to the present invention, even if heat generating elements having different heat generation amounts are mixedly mounted on the substrate, each heat transfer element joined to each heat generating element can perform heat transfer performance without changing its shape, dimensions, or the like. Can be made variable, and the cooling capacity can be controlled according to the amount of heat generation of each, so that the temperature of each heating element can be uniformly maintained at the set temperature.
第1図は本発明の一実施例を示す熱伝熱装置の全体側面
図、第2図は第1図の一部拡大図、第3図は伝熱体を形
成する微細トンネル部材の斜視図、第4図は第1図の熱
伝熱装置の部分拡大斜視図、第5図は伝熱体の高さとチ
ップ発熱量との関係を示す線図、第6図は他の実施例を
示す熱伝達装置の全体斜視図、第7図は更に他の実施例
を示す熱伝達装置の正面図、第8図は更に他の実施例を
示す熱伝達装置の正面図である。 1…基板、2…発熱体(半導体チップ)、3…伝熱体、
4…被覆部材(キャップ)、5…容器、6…冷却液、14
…被覆部材(テープ)、23…フィン部材、24…キャッ
プ、25…テープ。FIG. 1 is an overall side view of a heat transfer device showing an embodiment of the present invention, FIG. 2 is a partially enlarged view of FIG. 1, and FIG. 3 is a perspective view of a fine tunnel member forming a heat transfer body. FIG. 4 is a partially enlarged perspective view of the heat transfer device of FIG. 1, FIG. 5 is a diagram showing the relationship between the height of the heat transfer body and the heat value of the chip, and FIG. 6 is another embodiment. FIG. 7 is an overall perspective view of a heat transfer device, FIG. 7 is a front view of a heat transfer device showing still another embodiment, and FIG. 8 is a front view of a heat transfer device showing yet another embodiment. 1 ... Substrate, 2 ... Heating element (semiconductor chip), 3 ... Heat transfer element,
4 ... Covering member (cap), 5 ... Container, 6 ... Coolant, 14
... covering member (tape), 23 ... fin member, 24 ... cap, 25 ... tape.
Claims (6)
発熱体に伝熱体を取り付け、この伝熱体には、交差状の
微細なトンネル流路あるいは多数のフィンが形成され、
上記各部材が冷却液あるいは冷却空気中に浸漬され、発
熱体を冷却する熱伝達装置において、上記伝熱体を同一
形状に形成し伝熱面を各発熱体の発熱量に応じた面積の
被覆部材で覆い、伝熱体の伝熱面積を上記発熱量に応じ
変化させ、各発熱体の温度を設定温度に冷却るすことを
特徴とする熱伝達装置。1. A plurality of heating elements are mounted on a substrate, and a heat transfer element is attached to the heating element, and the heat transfer element is provided with intersecting fine tunnel channels or a large number of fins.
In a heat transfer device that cools a heating element by immersing each member in a cooling liquid or cooling air, the heating elements are formed in the same shape, and the heat transfer surface is covered with an area corresponding to the heating value of each heating element. A heat transfer device, characterized in that it is covered with a member, the heat transfer area of the heat transfer body is changed according to the amount of heat generation, and the temperature of each heat transfer body is cooled to a set temperature.
積層し、発熱体と共に縦方向あるいは横方向に並置され
ている特許請求の範囲第1項記載の熱伝達装置。2. The heat transfer device according to claim 1, wherein the heat transfer body is formed by stacking a plurality of unit heat transfer bodies in a multi-layered manner and is juxtaposed in the vertical direction or the horizontal direction together with the heating element.
許請求の範囲第2項記載の熱伝達装置。3. The heat transfer device according to claim 2, wherein the coating member is a cap-shaped coating.
求の範囲第2項記載の熱伝達装置。4. The heat transfer device according to claim 2, wherein the covering member is a tape-like covering.
り、この被覆部材で伝熱体の流路を埋設する特許請求の
範囲第2項記載の熱伝達装置。5. The heat transfer device according to claim 2, wherein the coating is solder braze or an adhesive, and the coating member fills the flow path of the heat transfer body.
根元部に交互に配置されている特許請求の範囲第4項ま
たは第5項記載の熱伝達装置。6. The heat transfer device according to claim 4, wherein the coating portions of the heat transfer body are alternately arranged at the tip and the root of each heat transfer body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61191650A JPH073844B2 (en) | 1986-08-18 | 1986-08-18 | Heat transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61191650A JPH073844B2 (en) | 1986-08-18 | 1986-08-18 | Heat transfer device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6347959A JPS6347959A (en) | 1988-02-29 |
| JPH073844B2 true JPH073844B2 (en) | 1995-01-18 |
Family
ID=16278182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61191650A Expired - Lifetime JPH073844B2 (en) | 1986-08-18 | 1986-08-18 | Heat transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH073844B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5444909A (en) * | 1993-12-29 | 1995-08-29 | Intel Corporation | Method of making a drop-in heat sink |
| US5552960A (en) * | 1994-04-14 | 1996-09-03 | Intel Corporation | Collapsible cooling apparatus for portable computer |
| TW265430B (en) * | 1994-06-30 | 1995-12-11 | Intel Corp | Ducted opposing bonded fin heat sink blower multi-microprocessor cooling system |
| US7861408B2 (en) * | 2005-06-07 | 2011-01-04 | Wolverine Tube, Inc. | Heat transfer surface for electronic cooling |
| TWI846195B (en) * | 2022-12-09 | 2024-06-21 | 緯創資通股份有限公司 | Immersion cooling device, active heat dissipation module and active flow-guiding module |
-
1986
- 1986-08-18 JP JP61191650A patent/JPH073844B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6347959A (en) | 1988-02-29 |
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