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JPH076928B2 - Electromagnetic diffraction device - Google Patents
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JPH076928B2 - Electromagnetic diffraction device - Google Patents

Electromagnetic diffraction device

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Publication number
JPH076928B2
JPH076928B2 JP62060815A JP6081587A JPH076928B2 JP H076928 B2 JPH076928 B2 JP H076928B2 JP 62060815 A JP62060815 A JP 62060815A JP 6081587 A JP6081587 A JP 6081587A JP H076928 B2 JPH076928 B2 JP H076928B2
Authority
JP
Japan
Prior art keywords
rays
ray
incident
degrees
electromagnetic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62060815A
Other languages
Japanese (ja)
Other versions
JPS63225159A (en
Inventor
安正 岡田
Original Assignee
工業技術院長
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 工業技術院長 filed Critical 工業技術院長
Priority to JP62060815A priority Critical patent/JPH076928B2/en
Publication of JPS63225159A publication Critical patent/JPS63225159A/en
Publication of JPH076928B2 publication Critical patent/JPH076928B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、電磁線回折装置に関し、特にX線などの電磁
波の入射線束に密接して配置されることを特徴とする半
導体検出器などの電磁波検出器を備えた電磁線回折装置
に関する。
Description: TECHNICAL FIELD The present invention relates to an electromagnetic diffraction device, and particularly to a semiconductor detector or the like characterized by being arranged in close contact with an incident ray bundle of electromagnetic waves such as X-rays. The present invention relates to an electromagnetic ray diffraction device including an electromagnetic wave detector.

〔従来の技術〕[Conventional technology]

従来、三次元格子である天然の結晶の格子定数aの測定
には、例えば、銅の特性X線(波長λ=0.15405980nm)
を特定の格子面間隔dの回折面で回折させ、その回折角
θを精度良く測るという方法で行ってきた。その1例と
してBond法があるが、その測定精度はよくても精度を△
d/dとして1×10-7であった。なお、△dはdの測定誤
差を示す。
Conventionally, for measuring the lattice constant a of a natural crystal that is a three-dimensional lattice, for example, characteristic X-rays of copper (wavelength λ = 0.15405980 nm) are used.
Was diffracted by a diffractive surface having a specific lattice spacing d, and the diffraction angle θ was accurately measured. The Bond method is one example, but the accuracy is good even if it is good.
It was 1 × 10 −7 as d / d. In addition, Δd represents a measurement error of d.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

上述の回折の関係は2dsin θ=n λでみられるように、
波長λさえ任意の値がとれるならば、回折角θが90度近
くで最も高精度な格子面間隔dが測定できることを示し
ている。しかし、物質定数である特定波長λを持つ特性
X線と、決まった格子面間隔dの結晶の回折面を使うの
で、必ずしも回折角θは90度近くで測定できないという
重大な制約があった。
As shown in 2d sin θ = n λ,
It is shown that if the wavelength λ can take an arbitrary value, the most accurate lattice spacing d can be measured when the diffraction angle θ is close to 90 degrees. However, since a characteristic X-ray having a specific wavelength λ which is a material constant and a diffraction surface of a crystal having a fixed lattice spacing d are used, there is a serious limitation that the diffraction angle θ cannot always be measured near 90 degrees.

本発明は、上述の欠点を除去し、従来一般的に不可能で
あった90度近くの回折角を高精度で測定可能な電磁線回
折装置を提供することを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to eliminate the above-mentioned drawbacks, and to provide an electromagnetic ray diffractometer capable of measuring a diffraction angle of nearly 90 degrees, which has heretofore been generally impossible, with high accuracy.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的を達成するために、本発明は、シンクロトロン
放射光の様な高輝度な連続した波長を持つ白色X線を発
生する白色X線発生手段と、測定すべき格子定数をもつ
格子型試料の格子面で90度近くの回折を起こす特定波長
のX線を前記白色X線から選択するモノクロメーター
と、該モノクロメーターからの前記特定波長の入射X線
を通すピンホール型コリメーターと、該ピンホール型コ
リメーターに密接して配設され、該ピンホール型コリメ
ーターを通った前記特定波長の入射X線が前記格子型試
料によって90度近い回折角で回折した回折電磁波を検出
する位置敏感型電磁波検出手段と、を具備したことを特
徴とする。
In order to achieve the above object, the present invention provides a white X-ray generation means for generating white X-rays having a continuous wavelength with high brightness such as synchrotron radiation, and a lattice type sample having a lattice constant to be measured. A monochromator that selects from the white X-rays X-rays of a specific wavelength that causes diffraction of nearly 90 degrees on the grating plane, and a pinhole-type collimator that passes incident X-rays of the specific wavelength from the monochromator, Position sensitive to be placed in close proximity to the pinhole type collimator and to detect the diffracted electromagnetic wave which the incident X-ray of the specific wavelength passing through the pinhole type collimator is diffracted by the grating type sample at a diffraction angle close to 90 degrees. Type electromagnetic wave detecting means.

〔作用〕[Action]

本発明では、入射電磁波(X線)の波長を試料の回折面
間隔dに応じてモノクロメータで任意に選んで90度近く
の回折角を作り、その回折X線を極めて微少に入射線に
密接した位置敏感型の電磁波検出器で受光検出する。
In the present invention, the wavelength of the incident electromagnetic wave (X-ray) is arbitrarily selected by the monochromator according to the diffractive surface spacing d of the sample to form a diffraction angle of about 90 degrees, and the diffracted X-ray is extremely minutely close to the incident line. Received light is detected by the position-sensitive electromagnetic wave detector.

このように、本発明によれば、回折角が90度近くで精度
よく測定できるので、格子間隔を高精度で測定すること
ができる。すなわち、本発明によれば、結晶の格子定数
のある参照値からのずれを従来の方法による結果に対し
て、例えば1桁も高精度で測ることができる。
As described above, according to the present invention, since the diffraction angle can be accurately measured near 90 degrees, the lattice spacing can be measured with high accuracy. That is, according to the present invention, the deviation of the crystal lattice constant from a certain reference value can be measured with high accuracy, for example, by one digit as compared with the result obtained by the conventional method.

〔実施例〕〔Example〕

以下、図面を参照して、本発明の実施例を詳細に説明す
る。
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

第1図は、本発明の一実施例の構成を示す。本図におい
て、シンクロトロン放射光の様な高輝度な連続した波長
を持つ強力な白色X線源1から放射された白色X線2
は、適切なモノクロメーター、好ましくは4結晶モノク
ロメーター3で分光されて、測定すべき格子定数をもつ
試料結晶(格子型試料)6の格子面で90度近くの回折を
起こす特定波長λのX線(単色X線)4になる。このX
線4は、ピンホール型コリメーター5で平行線束にされ
て、試料結晶6に入射する。上記4結晶モノクロメータ
ー3は1個のGe単結晶からチャネルカットで切り出され
たもの2組ででき、この(440)反射を使って発散角が
5秒程度の入射X線が得られ、またそのことによってプ
ラス,マイナス反射の両方で鋭い回折線ピークが得られ
る。上記ピンホール型コリメーター3の先端口径は1mm
程度で充分である。
FIG. 1 shows the configuration of an embodiment of the present invention. In this figure, white X-rays 2 emitted from a powerful white X-ray source 1 having a continuous wavelength with high brightness like synchrotron radiation.
Is an X of a specific wavelength λ which is dispersed by an appropriate monochromator, preferably a 4-crystal monochromator 3, and causes diffraction of nearly 90 degrees at the lattice plane of a sample crystal (lattice type sample) 6 having a lattice constant to be measured. It becomes a line (monochromatic X-ray) 4. This X
The line 4 is made into a parallel line bundle by the pinhole type collimator 5 and is incident on the sample crystal 6. The four-crystal monochromator 3 is made of two sets cut from one Ge single crystal by a channel cut, and using this (440) reflection, an incident X-ray with a divergence angle of about 5 seconds can be obtained. As a result, sharp diffraction line peaks are obtained in both positive and negative reflections. The tip diameter of the pinhole type collimator 3 is 1 mm
The degree is enough.

この試料結晶6をその結晶の回折面に含まれている回転
軸(試料回転軸)9の周りで回転させれば、その回折面
で回折された回折X線7は入射X線4の光軸に密接して
光軸と直角方向に設置された固体電磁波検出器8に入射
する。その入射位置は例えばマルチチャンネルアナライ
ザ11で出力表示される。その際、試料結晶6での回折角
θが、丁度90度近くにするには、モノクロメーター3の
入射X線4とのなす角度(モノクロメーター回折角)10
を調節して、X線4の波長λを適当に変えることによっ
てできる。上記固体電磁波検出器8は、湾曲形状の位置
敏感型電磁波検出器であり、試料結晶4の回転軸を中心
とした半径をその回転軸と検出器8の表面の距離による
弧の一部とする。
When this sample crystal 6 is rotated around a rotation axis (sample rotation axis) 9 included in the diffraction surface of the crystal, the diffracted X-rays 7 diffracted by the diffraction surface are the optical axes of the incident X-rays 4. Is incident on the solid-state electromagnetic wave detector 8 that is installed close to the optical axis and is perpendicular to the optical axis. The incident position is output and displayed on the multi-channel analyzer 11, for example. At this time, in order to make the diffraction angle θ of the sample crystal 6 close to 90 degrees, the angle formed by the incident X-ray 4 of the monochromator 3 (monochromator diffraction angle) 10
Can be adjusted to change the wavelength λ of the X-ray 4 appropriately. The solid-state electromagnetic wave detector 8 is a curved position-sensitive electromagnetic wave detector, and has a radius centered on the rotation axis of the sample crystal 4 as a part of an arc depending on a distance between the rotation axis and the surface of the detector 8. .

上記のように、シンクロトロン放射光の様な高輝度な連
続した波長を持つ白色X線2を使用しているので、格子
定数に合わせた波長を選択できる。この波長の選択は上
記の様にモノクロメーター3の角度を調整することによ
って得ることができる。また、ピンホール型コリメータ
ー3と位置敏感型電磁波検出器8を使って、半導体検出
素子に密接して入射X線の通路を作っているので、死角
は2mm以下に限定できる。したがって、ブラッグ角は89.
8度は取れることとなる。ブラッグ角が89.8度取れる場
合には87.5度に比べてブラッグ角の決定精度が同じ1秒
である場合、下記のように1桁以上の精度で格子定数を
決定できる(この時の波長は1.98892Aを使った)。
As described above, since the white X-rays 2 having a continuous wavelength with high brightness such as synchrotron radiation are used, the wavelength that matches the lattice constant can be selected. The selection of this wavelength can be obtained by adjusting the angle of the monochromator 3 as described above. Further, since the pinhole type collimator 3 and the position sensitive type electromagnetic wave detector 8 are used to form the passage of the incident X-ray in close contact with the semiconductor detection element, the blind spot can be limited to 2 mm or less. Therefore, the Bragg angle is 89.
You will get 8 degrees. If the Bragg angle can be 89.8 degrees and the Bragg angle determination accuracy is the same for 1 second compared to 87.5 degrees, the lattice constant can be determined with an accuracy of one digit or more as follows (wavelength at this time is 1.98892A). Was used).

ブラッグ角 1秒変化での格子定数の変化(Δd) 87.5度 1.9×10-7A 89.8度 1.5×10-8A このように、回折X線をできるだけブラッグ角の90度近
くで捕らえるので、格子定数を非常に高精度で測定でき
る。
Bragg angle Change of lattice constant with 1 second change (Δd) 87.5 degrees 1.9 × 10 -7 A 89.8 degrees 1.5 × 10 -8 A Thus, the diffraction X-rays are captured as close to 90 degrees of the Bragg angle as possible. The constant can be measured with extremely high accuracy.

第2図は上述の固体電磁波検出器8の検出面側の構成例
を示す。本図に示すように、上述のX線4はコリメータ
ー5を通り、紙面に垂直で手前方向に入射X線4が通る
穴状の通路12を通って、紙面手前に置いてある試料結晶
6(第1図参照)に入射する。この試料結晶6で回折さ
れた回折X線7(第1図参照)は、通路12に密接した一
次元の位置敏感型半導体検出器群(センサアレー)14の
例えば15或は16の地点に入射しその入射地点が正確に検
出される。
FIG. 2 shows a configuration example on the detection surface side of the solid-state electromagnetic wave detector 8 described above. As shown in the figure, the above-mentioned X-ray 4 passes through the collimator 5, passes through the hole-shaped passage 12 through which the incident X-ray 4 passes in the front direction perpendicular to the paper surface, and the sample crystal 6 placed in front of the paper surface. (See FIG. 1). Diffracted X-rays 7 (see FIG. 1) diffracted by the sample crystal 6 are incident on, for example, 15 or 16 points of a one-dimensional position-sensitive semiconductor detector group (sensor array) 14 which is in close contact with the passage 12. Then, the incident point is accurately detected.

この様な電磁波検出器8を第1図の様にX線回折装置に
配置すれば、電磁波検出器8と回転軸9との間の距離、
モノクロメーター3と入射X線4とのなす角度10を固定
することによって、試料結晶6の格子面間隔dに近い値
d±△dを有する異なった試料結晶の格子面間隔を相対
的に精度よく測ることができる。
If such an electromagnetic wave detector 8 is arranged in the X-ray diffractometer as shown in FIG. 1, the distance between the electromagnetic wave detector 8 and the rotating shaft 9
By fixing the angle 10 formed between the monochromator 3 and the incident X-ray 4, the lattice spacing of different sample crystals having a value d ± Δd close to the lattice spacing d of the sample crystal 6 can be relatively accurately measured. It can be measured.

現在、位置分解能がほぼ10μmという比較的高分解能の
位置敏感型半導体検出器が提供されているので、例え
ば、入射X線4の線幅を、0.1mmにし、電磁波検出器8
と回転軸9の距離を400mmにし、回線X線7の半値幅が
角度にしてせいぜい10秒であれば、89.95度程度の回折
角が採れ、測定精度を△d/dとして5×10-8の精度で測
定することが可能となる。
At present, a position sensitive type semiconductor detector having a relatively high position resolution of about 10 μm is provided. For example, the line width of the incident X-ray 4 is set to 0.1 mm and the electromagnetic wave detector 8 is used.
If the distance between the rotary shaft 9 and the rotary shaft 9 is 400 mm, and the half width of the line X-ray 7 is an angle of 10 seconds at most, a diffraction angle of about 89.95 degrees can be obtained, and the measurement accuracy is Δd / d of 5 × 10 -8. It becomes possible to measure with the accuracy of.

なお、上述の本実施例ではX線による回折装置を例示し
たが、本発明はこれに限定されず、例えば、電子線又は
中性子線による回折装置にも適用できる。
In addition, although the X-ray diffracting device is illustrated in the above-mentioned embodiment, the present invention is not limited to this, and is applicable to, for example, an electron beam or neutron beam diffracting device.

更に、電磁波検出器8についても第3図に示すように、
上述の穴状の通路12の代りに間隙状の通路16を設け、そ
の通路16の周辺に検出器群14を配置してもよい。
Furthermore, regarding the electromagnetic wave detector 8, as shown in FIG.
Instead of the hole-shaped passage 12 described above, a gap-shaped passage 16 may be provided, and the detector group 14 may be arranged around the passage 16.

〔発明の効果〕〔The invention's effect〕

以上説明したように、本発明によれば、シンクロトロン
放射光の様な高輝度な連続した波長を持つ白色X線を使
用し、かつピンホール型コリメーターと位置敏感型電磁
波検出器を使って半導体検出素子に密接して入射X線の
通路を作ることで、従来は一般的に不可能であった90度
近くの回折角を入射線に密接した位置敏感型検出器で精
度よく測れるようにしたので、結晶の格子定数のある参
照値からのずれを従来の方法による結果に対して1桁も
高精度で測ることが可能となる高精度な電磁線回折装置
が得られる。
As described above, according to the present invention, a white X-ray having a continuous wavelength with high brightness such as synchrotron radiation is used, and a pinhole collimator and a position sensitive electromagnetic wave detector are used. By making a path for incident X-rays close to the semiconductor detection element, it is possible to accurately measure a diffraction angle of nearly 90 degrees, which was generally impossible in the past, with a position-sensitive detector close to the incident line. As a result, it is possible to obtain a highly accurate electromagnetic beam diffraction device that can measure the deviation of the crystal lattice constant from a certain reference value with an accuracy as high as one digit as compared with the result obtained by the conventional method.

【図面の簡単な説明】 第1図は本発明の電磁線回折装置の一実施例の構成を示
す平面図、 第2図は第1図の検出器部分の詳細な正面図、 第3図は第1図の検出器部分の他の実施例の正面図であ
る。 1……X線源、 2……白色X線、 3……モノクロメータ、 4……単色X線(入射X線)、 5……コリメーター、 6……試料、 7……回折X線、 8……位置敏感型電磁波検出器、 9……試料回転軸、 10……モノクロメーター回折角、 11……マルチ チャンネル アナライザ、 12……入射X線の穴状の通路、 14……一次元位置敏感型半導体検出器群、 15,16……回折X線の検出器への入射点、 17……入射X線の間隙状の通路。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view showing the configuration of an embodiment of an electromagnetic diffraction apparatus of the present invention, FIG. 2 is a detailed front view of the detector portion of FIG. 1, and FIG. FIG. 7 is a front view of another embodiment of the detector portion of FIG. 1. 1 ... X-ray source, 2 ... white X-ray, 3 ... monochromator, 4 ... monochromatic X-ray (incident X-ray), 5 ... collimator, 6 ... sample, 7 ... diffraction X-ray, 8: Position sensitive electromagnetic wave detector, 9: Sample rotation axis, 10: Monochromator diffraction angle, 11: Multi-channel analyzer, 12: Incident X-ray hole passage, 14: One-dimensional position Sensitive semiconductor detector group, 15,16 ... Injection point of diffracted X-rays on the detector, 17 ... Gap-shaped passage of incident X-rays.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】シンクロトロン放射光の様な高輝度な連続
した波長を持つ白色X線を発生する白色X線発生手段
と、 測定すべき格子定数をもつ格子型試料の格子面で90度近
くの回折を起こす特定波長のX線を前記白色X線から選
択するモノクロメーターと、 該モノクロメーターからの前記特定波長の入射X線を通
すピンホール型コリメーターと、 該ピンホール型コリメーターに密接して配設され、該ピ
ンホール型コリメーターを通った前記特定波長の入射X
線が前記格子型試料によって90度近い回折角で回折した
回折電磁波を検出する位置敏感型電磁波検出手段と、 を具備したことを特徴とする電磁線回折装置。
1. A white X-ray generating means for generating white X-rays having a continuous wavelength of high brightness such as synchrotron radiation, and a lattice plane of a lattice type sample having a lattice constant to be measured is close to 90 degrees. A monochromator that selects X-rays of a specific wavelength that causes diffraction of the white X-rays, a pinhole-type collimator that transmits incident X-rays of the specific wavelength from the monochromator, and a pinhole-type collimator And the incident X of the specific wavelength passing through the pinhole collimator.
A position-sensitive electromagnetic wave detecting means for detecting a diffracted electromagnetic wave in which a line is diffracted by the grating type sample at a diffraction angle close to 90 degrees, and an electromagnetic ray diffracting apparatus.
JP62060815A 1987-03-16 1987-03-16 Electromagnetic diffraction device Expired - Lifetime JPH076928B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62060815A JPH076928B2 (en) 1987-03-16 1987-03-16 Electromagnetic diffraction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62060815A JPH076928B2 (en) 1987-03-16 1987-03-16 Electromagnetic diffraction device

Publications (2)

Publication Number Publication Date
JPS63225159A JPS63225159A (en) 1988-09-20
JPH076928B2 true JPH076928B2 (en) 1995-01-30

Family

ID=13153224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62060815A Expired - Lifetime JPH076928B2 (en) 1987-03-16 1987-03-16 Electromagnetic diffraction device

Country Status (1)

Country Link
JP (1) JPH076928B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126280B2 (en) * 1972-07-05 1976-08-05
JPS61178650A (en) * 1985-02-05 1986-08-11 Rigaku Denki Kk Apparatus for x-ray diffraction of minute part

Also Published As

Publication number Publication date
JPS63225159A (en) 1988-09-20

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