JPH077786B2 - Method for manufacturing semiconductor device - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and in particular, is suitable for determining a relative position between a plurality of substrates provided with predetermined wirings or elements. Regarding the method.

[Background of the Invention]

In response to the increase in the integration density of semiconductor devices, its multifunctionalization,
In order to achieve high performance, it is necessary to have multiple layers of wiring,
It is said that it will be necessary to form several tens of wiring layers in the future. Fabrication of such a multilayer wiring by a method of sequentially forming from the lower layer on the substrate on which the element is formed is extremely non-defective in terms of a decrease in non-defective product rate due to an increase in the number of steps and an increase in so-called turn around time. Efficient and costly. The adverse effects resulting from such an increase in the number of steps hinder the manufacture of wafer-scale integrated circuits, and
The same applies to the manufacture of a three-dimensional integrated circuit as the manufacture of a multilayer wiring integrated circuit. In order to eliminate the drawbacks of the conventional method, there is a method of independently manufacturing a plurality of substrates provided with predetermined wirings or elements, and then bonding and integrating the plurality of substrates to manufacture a semiconductor device. The problem with this method is how to determine the relative positional relationship between a plurality of substrates. As a method of determining such a relative positional relationship, there is a method of aligning an exposure mask and a substrate, which is carried out in a conventional manufacturing method. In this method, all of a plurality of target substrates are exposed to light. This is not applicable when there is no part that transmits

[Object of the Invention]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for manufacturing a semiconductor device, which can solve the above-mentioned conventional problems and can determine the relative positional relationship between a plurality of substrates provided with predetermined wirings or elements.

[Outline of Invention]

In order to achieve the above object, the present invention provides a capacitance measuring electrode on a plurality of substrates provided with predetermined wirings or elements,
At least one is prepared for each, the plurality of substrates are arranged so that at least two of the electrodes face each other, and the capacitance change due to the change in the capacitance between the electrodes or the relative positional relationship between the electrodes is measured. This makes it possible to determine the relative positional relationship between the substrates. After arranging the plurality of substrates (an array means a state in which a relative positional relationship between the plurality of substrates in a direction parallel to any one main surface of the substrates is fixed), the plurality of substrates is arranged. It is also possible to adjust the distance between them or stack the plurality of substrates.

Example of Invention

 Hereinafter, the present invention will be described in detail with reference to examples.

Example 1 will be described with reference to FIG. FIG. 1 (a) shows a substrate provided with a capacitance measuring electrode used in the present invention. The number of electrodes is arbitrary, but here, it is 40. In the figure, reference numeral 1 represents a substrate provided with a predetermined wiring or element, 2 to 5 represent capacitance measuring electrodes, and 6 represents an adhesive electrode for adhesively integrating a plurality of substrates to establish electrical conduction. The capacitance measuring electrodes 2 to 5 each have a size of 1 μm × 5 cm, and 10 electrodes are arranged at intervals of 1 μm. The shape is rectangular here, but it goes without saying that other shapes may be used. As the substrate 1, a semiconductor substrate having predetermined wirings and elements and an insulating substrate having predetermined wirings are used, and the capacitance measuring electrodes 2 to 5 face each other when the both substrates 1 face each other. Are placed on top of each. The relative positional relationship between the capacitance measuring electrodes 2 to 5 and the bonding electrode 6 on each substrate is fixed, and the relative capacitance relationship between the capacitance measuring electrodes 2 to 5 on the two substrates 1 is determined. If you define the positional relationship,
The positional relationship between the bonding electrodes 6 on the two substrates 1 is also determined. One semiconductor substrate 1 and one insulator substrate 1 as shown in FIG. 1A are faced in parallel as shown in FIG. 1B. The insulator substrate 21 is fixed, and the semiconductor substrate 31 is installed on the movable base 41. It is sufficient that at least one of the substrates is possible. The distance between the two substrates 21 and 31 is 10 μm. Capacitors formed by the capacitance measuring electrodes 22 and 32 and 24 and 34 are connected in parallel, and the total amount thereof is measured by the capacitance meter 42. The result of measuring the capacitance while moving the movable table 41 in the direction perpendicular to the long side of the capacitance measuring electrode 32 is shown in FIG. The horizontal axis shows the deviation from the maximum capacity point. Similar results were obtained by the same method for the moving method perpendicular to the moving direction. The determination accuracy of the relative positional relationship between the two substrates 21 and 31 in the present embodiment determined by the measurement accuracy of the used capacitance meter 42 being 0.3 pF was ± 0.3 μm. It is not always necessary to connect two sets of capacitors in parallel, and three or more sets may be connected.

Example 2 will be described with reference to FIG. The present embodiment shows an example in which both substrates 21 and 31 are superposed after the process similar to that of the first embodiment. The movable base 41 used in the second embodiment has a function of arranging the both substrates 21 and 31 and then adjusting a distance between the both substrates 21 and 31, or superposing the both substrates 21 and 31. After arranging the two substrates 21 and 31 as in the first embodiment, the movable table 41 is moved in a direction perpendicular to the main surface of the semiconductor substrate 31, and the two substrates 21 and 3 are moved.
Stacked 1 When the movable table 41 is moved in the direction perpendicular to the main surface of the substrate 31, an error of ± 0.2 μm occurs in the direction of the main surface of the substrate.
The accuracy of determination of the relative positional relationship between them was ± 0.5 μm. After this step, when the substrates 21 and 31 are heated and pressure-bonded, the bonding electrodes 26 and 36 are bonded and the substrates 21 and 31 are integrated. As a method of integrating the two substrates 21 and 31, it is also possible to use a tape carrier method or the like.

Example 3 will be described with reference to FIG. In the third embodiment, the same substrates 21 and 31 as in the first embodiment are used, and as shown in FIG. 3A, the output of the capacitance meter 42 is connected to the secondary differentiating circuit 43, and the two substrates 21 and 3 are connected.
Not the capacitance itself between the capacitance measuring electrodes 22 and 24, 32 and 34 on 1 but the peak of the capacitance change due to the movement of the movable base 41 is detected to determine the relative positional relationship between the two substrates 21 and 31. This is an example of the above. FIG. 3B shows an example of the output of the secondary differentiating circuit 43. The horizontal axis represents the deviation from the center of the peak corresponding to the maximum capacity. By providing the secondary differentiating circuit 43, the accuracy of determining the relative position between the substrates 21 and 31 in this embodiment is ± 0.15 μm.

Example 4 will be described with reference to FIG. This embodiment is an example in which the substrates 21 and 31 similar to those of the first embodiment are used, and the parallel relationship between the substrates 21 and 31 is accurately determined by using the same capacitance meter 42 as that of the first embodiment. In the present embodiment, the capacitance measuring electrode 22 and
The capacitors composed of each set of 32, 24 and 34 were not connected in parallel and the capacity was measured independently. Movable base 41 used in this embodiment
Is equipped with a height adjusting device composed of screws with small pitches at eight peripheral portions, and has a function of adjusting the parallelism between the two substrates 21 and 31. When the movable base 41 is moved so that the capacitors formed of the electrodes 22 and 32, 24 and 34 of each set have the same capacity, the two substrates 21 and 31 at the respective positions on the opposite substrate surfaces are opposed to each other. The difference in distance between the and 31 was within ± 0.4 μm.

〔The invention's effect〕

According to the present invention, there is an effect that it is possible to accurately determine the relative positional relationship between a plurality of substrates provided with wirings or elements. Further, it becomes possible to adjust the distance between the plurality of substrates or to superpose the plurality of substrates.

[Brief description of drawings]

1 to 3 are views for explaining different embodiments of the present invention. 1 ... Substrate with predetermined wiring or elements, 2-5,22,2
4,32,34 …… Capacity measuring electrodes, 6,26,36 …… Adhesive electrodes, 21 …… Insulator substrate, 31 …… Semiconductor substrate, 41 …… Movable platform, 42 …… Capacity meter, 43… … Second-order differentiation circuit.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Sukeyoshi Tsunekawa 1-280 Higashi Koigakubo, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Inventor Hiroshi Morisaki 1-280 Higashi Koigakubo, Kokubunji, Tokyo Hitachi Ltd. Central Research Laboratory

Claims (5)

[Claims] 1. A first substrate and a second substrate each having at least one of a predetermined wiring and a predetermined element on each main surface are prepared, and the main surface of the first substrate and the second substrate are prepared. After facing the main surface of the first substrate, the first substrate and the second substrate are bonded and integrated to manufacture a semiconductor device.
In order to measure the relative positional relationship between the first substrate and the second substrate, electrodes capable of measuring the capacitance are arranged in advance on the respective main surfaces of the first substrate and the second substrate, and the electrodes capable of measuring the capacitance are arranged. A method for manufacturing a semiconductor device, characterized in that the relative positional relationship is measured by measuring a capacitance between the two. 2. The relative positional relationship between the first substrate and the second substrate is adjusted according to the output of a capacitance measuring means for measuring the capacitance between the capacitance-measurable electrodes, and thereafter, The method for manufacturing a semiconductor device according to claim 1, wherein the both are integrally bonded. 3. A connection electrode corresponding to each other is previously formed on the main surface of each of the first substrate and the second substrate. When the two are bonded and integrated, the first substrate The method for manufacturing a semiconductor device according to claim 2, wherein the connection electrode on the main surface and the connection electrode on the main surface of the second substrate are connected to each other. 4. The bonding electrode on the main surface of the first substrate and the connecting electrode on the main surface of the second substrate are bonded to each other by heat treatment when bonding and integrating both of them. Claim 3 characterized in that
A method of manufacturing a semiconductor device according to item. 5. The method according to claim 1, wherein one of the first substrate and the second substrate is a semiconductor substrate.
Item 5. A method for manufacturing a semiconductor device according to any one of items 4 to 4.