JPH0783072B2 - Container for semiconductor device - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device container, and more particularly to a semiconductor device container for mounting and accommodating an ultra-high frequency transistor.

[Conventional technology]

Among the conventional semiconductor device containers, a container having a structure as illustrated in FIG. 4 is used as a container for mounting an ultra-high frequency transistor including a matching capacitor and the like inside the container. FIG. 4 is a perspective view of a semiconductor device container in which an ultra-high frequency power transistor and a matching capacitor are mounted and housed.

Generally, in an ultra high frequency transistor, an external line (generally,
50Ω) is used, but in order to reduce the loss due to mismatch, it is necessary to match as close to the transistor as possible. Therefore, as shown in FIG. The matching capacitor 8 and the transistor 7 are mounted in the container. Further, in order to reduce the ground inductance, a plurality of thin wires of the wiring metal 19 of the emitter of the transistor are connected to the same emitter electrode. Therefore, the metal bridge 10 for the bridge is mounted in the container by means such as brazing.

[Problems to be solved by the invention]

A semiconductor device container for mounting a conventional ultra-high frequency transistor includes a metal bridge 10 and an insulating substrate 11 as described above.
Since they are fixed by brazing or the like, it is necessary to provide a space between them and the signal lead-out conductor layer 1 to insulate them. Therefore, the metal bridge 10 must have a certain height (about 1 mm). Furthermore, in order to maintain the mechanical strength of the metal bridge 10,
Its shape also needs to be large. Therefore, the conventional semiconductor device container has the drawbacks of large size and high manufacturing cost.

An object of the present invention is to provide a semiconductor device container having a small shape and a reduced manufacturing cost by eliminating the above-mentioned drawbacks of the conventional semiconductor device container.

[Means for solving problems]

The semiconductor device container of the present invention includes a signal introducing conductor layer, a signal introducing conductor layer for mounting a semiconductor element that is insulated from the signal introducing conductor layer, the signal introducing conductor layer, and the An insulating substrate having a first grounding conductor layer on the upper surface and a second grounding conductor layer on the lower surface, the first grounding conductor layer being mounted on the signal lead-out conductor layer so as to be insulated from each other and for mounting a capacitor, A second insulator mounted on the insulating substrate and having a third ground conductor layer on its upper surface, and electrically connecting the first, second and third ground conductor layers with a through-hole conductor or a metallized layer. Are connected to each other.

〔Example〕

 Next, embodiments of the present invention will be described with reference to the drawings.

1 (a) and 1 (b) are a plan view and a side view of a first embodiment of the present invention.

In FIG. 1, reference numeral 1 is an insulating substrate, 2 is an insulating substrate 1.
The second insulator provided above and the ground conductor layers 3a and 3b and the second insulator 2 provided on the upper and lower surfaces of the insulating substrate 1.
The ground conductor layer 3c provided on the upper surface of the insulating substrate 1
And the second insulator 2 are electrically connected by a through hole 4 penetrating the second insulator 2. When a transistor that consumes a large amount of heat, such as a power transistor, is mounted, a material having a high thermal conductivity such as beryllia is selected as the insulating substrate 1, but the second insulator 2 is an inexpensive material such as alumina. The material is good. A signal introducing conductor layer 5 and a signal deriving conductor layer 6 which are insulated from the grounding conductor layer 3a are provided on the upper surface of the insulating substrate 1. Signal introduction conductor layer 5 and signal introduction conductor layer 6
Is also insulated.

FIG. 2 is a plan view showing a state in which the transistor 7 and the matching capacitor 8 are mounted on the embodiment shown in FIG.

The transistor 7 is mounted on the signal deriving conductor layer 6 and the matching capacitor 8 is mounted on the grounding conductor layer 3a.
The grounding terminal is connected to the grounding conductor layer 3c or 3a by the wiring metal 9. This allows the desired connection to be made without the use of metal bridges as in the prior art.

FIG. 3 is a plan view showing a second embodiment of the present invention.

In this embodiment, the connection between the ground conductor layer on the upper surface or the lower surface of the insulating substrate 21 and the ground conductor layer on the upper surface of the second insulator 22 is made by a metallized layer 23 deposited on their side surfaces instead of through holes. I went there.

In addition, each of the above-described embodiments is an example of the case of a configuration in which the electronic component mounting portion such as a transistor and a matching capacitor is exposed, but the present invention is configured to seal the mounted electronic component with a cap. It can also be applied to containers.

〔The invention's effect〕

As described above, the present invention uses a second insulator having a conductor layer deposited on the surface thereof, instead of the metal bridge used for installing a transistor, and the second insulator is directly mounted on the insulating substrate. As a result, a small and inexpensive semiconductor device container can be obtained.

[Brief description of drawings]

1 (a) and 1 (b) are a plan view and a side view of the first embodiment of the present invention, and FIG. 2 is a plan view showing a state in which a transistor is mounted on the embodiment of FIG. 1, and FIG. Is a plan view showing a second embodiment of the present invention, and FIG. 4 is a perspective view showing a state where a transistor is mounted on an example of a conventional semiconductor container. 1, 11, 21 ... Insulating substrate, 2, 22 ... Second insulator, 3a
3b …… Grounding conductor layer, 4 …… Through hole, 5 ・ 15 …… Signal introduction conductor layer, 6 ・ 16 …… Signal lead conductor layer, 7 ……
Transistor, 8 ... Matching capacitor, 9/19 ... Wiring metal, 10 ... Metal bridge, 11 ... Insulating substrate.

Claims (1)

[Claims] 1. A signal introducing conductor layer and the signal introducing conductor layer are insulated from each other, and a signal deriving conductor layer for mounting a semiconductor element, the signal introducing conductor layer, and the signal deriving conductor layer. Having a first ground conductor layer for mounting the capacitor, which is provided insulated from each other between
An insulating substrate having a second ground conductor layer on the lower surface; and a second insulator mounted on the insulating substrate and having a third ground conductor layer on the upper surface, the first, second, and third ground conductors A container for a semiconductor device, characterized in that the layers are electrically connected by a through-hole conductor or a metallized layer.