JPH0785508B2 - Method for forming protective film on semiconductor substrate - Google Patents
Method for forming protective film on semiconductor substrateInfo
- Publication number
- JPH0785508B2 JPH0785508B2 JP22478283A JP22478283A JPH0785508B2 JP H0785508 B2 JPH0785508 B2 JP H0785508B2 JP 22478283 A JP22478283 A JP 22478283A JP 22478283 A JP22478283 A JP 22478283A JP H0785508 B2 JPH0785508 B2 JP H0785508B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- substrate
- metal layer
- forming
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明は半導体基板の保護膜形成方法に関する。The present invention relates to a method for forming a protective film on a semiconductor substrate.
（ロ） 従来技術 従来、半導体レーザの共振器端面等に保護膜を形成する
方法としては、第１図Ａに示す如く保護膜を形成せんと
する基板（１）の表面以外をダミー基板（２）等でカバ
ーし、スパッタリン等により上記表面に保護膜（３）を
形成する方法が一般的であった。(B) Conventional Technology Conventionally, as a method of forming a protective film on a cavity end face of a semiconductor laser, as shown in FIG. 1A, a dummy substrate (2) is used except for the surface of the substrate (1) on which the protective film is to be formed. ) And the like, and a protective film (3) is formed on the surface by spattering or the like.
然るに斯る方法では基板（１）とダミー基板（２）との
すき間及び基板（１）とダミー基板（２）との位置ずれ
等により第１図Ｂに示す如くダミー基板（２）で覆われ
た基板（１）表面上にまで保護膜（３）が形成されると
いう問題があった。However, in such a method, the dummy substrate (2) is covered with the dummy substrate (2) as shown in FIG. Moreover, there is a problem that the protective film (3) is formed even on the surface of the substrate (1).
斯る問題点を解決する方法としては第２図に示す如く上
記ダミー基板（２）に換えてSiO2膜等のマスク（４）を
形成し、保護膜（３）を形成する方法も考えられるが、
上記保護膜（３）形成時上記マスク（４）上に保護膜
（３）が形成されるので保護膜（３）形成後マスク
（４）を除去することが困難となる。As a method of solving such a problem, a method of forming a protective film (3) by forming a mask (4) such as a SiO 2 film instead of the dummy substrate (2) as shown in FIG. 2 can be considered. But,
Since the protective film (3) is formed on the mask (4) when the protective film (3) is formed, it is difficult to remove the mask (4) after the protective film (3) is formed.
（ハ） 発明の目的 本発明は斯る点に鑑みてなされたもので、半導体表面へ
の保護膜形成にあたって不所望な部分への斯る膜の形成
を抑止できる半導体基板の保護膜形成方法を提供せんと
するものである。(C) Object of the invention The present invention has been made in view of the above circumstances, and provides a method for forming a protective film on a semiconductor substrate, which can prevent the formation of such a film on an undesired portion when forming a protective film on a semiconductor surface. It is intended to be provided.
（ニ） 発明の構成 本発明の構成的特徴は基板の一主面上に金属層を形成す
る工程、該基板上に開孔部を有するマスクを形成する工
程、上記基板及びマスクに対しては非エッチング性であ
るエッチング液を用いて上記金属層を選択的にエッチン
グする工程、上記開孔部に沿って上記基板を分離する工
程、少なくとも上記基板の露出面上に保護膜を形成する
工程、上記金属層を上記エッチング液を用いて完全に除
去する工程を備えたことにある。(D) Configuration of the invention The constitutional features of the present invention include: a step of forming a metal layer on one main surface of a substrate; a step of forming a mask having openings on the substrate; A step of selectively etching the metal layer using an etchant that is non-etching, a step of separating the substrate along the opening, a step of forming a protective film on at least the exposed surface of the substrate, There is a step of completely removing the metal layer using the etching solution.
（ホ） 実施例 第３図Ａ乃至Ｄは本発明の実施令を示す工程別断面図で
ある。(E) Example FIGS. 3A to 3D are cross-sectional views by process showing an implementation order of the present invention.
第３図Ａは第１工程を示し、一主面にAu−Sn合金からな
るオーミック性の電極（11）が形成されたｎ型GaAs基板
（12）上にIn（インジウム）からなる金属層（13）及び
紙面垂直方向に延在する開孔部（14）を有しSiO2からな
るマスク（15）を形成する。上記金属層（13）及びマス
ク（15）の形成は例えば一旦スパッタリング法等により
基板（12）の一主面上にIn及びSiO2を順次積層後ホトリ
ソグラフィ技術を用いて上記開孔部（14）を形成する。FIG. 3A shows the first step, in which a metal layer (In) is formed on an n-type GaAs substrate (12) having an ohmic electrode (11) made of an Au—Sn alloy on one main surface. 13) and a mask (15) made of SiO 2 having an opening (14) extending in the direction perpendicular to the plane of the drawing. The metal layer (13) and the mask (15) are formed, for example, by sequentially stacking In and SiO 2 on one main surface of the substrate (12) once by a sputtering method or the like, and then using the photolithography technique to form the opening (14). ) Is formed.
第３図Ｂは第２工程を示し、上記金属層（13）を開孔部
（14）表面より上記マスク（15）が基板（12）に対して
庇となるように選択的にエッチングする。斯るエッチン
グは上記基板（12）及びマスク（15）に対して非エッチ
ング性で、金属層（13）に対してはエッチング性の例え
ばHel（塩酸）:HNO3（硝酸）:H2O（水）＝1:1:4のエッ
チング液を用いて行なう。FIG. 3B shows the second step, in which the metal layer (13) is selectively etched from the surface of the opening (14) so that the mask (15) becomes an eaves to the substrate (12). Such etching is non-etching to the substrate (12) and the mask (15) and etching to the metal layer (13) such as Hel (hydrochloric acid): HNO 3 (nitric acid): H 2 O ( Water) = 1: 1: 4 etching solution.
第３図Ｃは第３工程を示し、上記基板（12）を開孔部
（14）に沿ってへき開分離すると共に斯るへき開面にス
パッタリング法によりAl2O3（アルミナ）を蒸着し保護
膜（16）を形成する。斯る保護膜（16）形成時、上記電
極（11）表面は金属層（13）で被覆され、かつ被覆され
ていない部分もマスク（15）が庇として存在するため上
記Al2O3が蒸着されることはない。FIG. 3C shows a third step, in which the substrate (12) is cleaved and separated along the opening (14) and Al 2 O 3 (alumina) is deposited on the cleaved surface by a sputtering method to form a protective film. Form (16). At the time of forming such a protective film (16), the surface of the electrode (11) is covered with the metal layer (13), and the mask (15) also exists as an eaves in the uncovered portion, so that the Al 2 O 3 is vapor-deposited. It will not be done.
第３図Ｄは最終工程を示し、上記金属層（13）及びマス
ク（15）を除去する。斯る除去は第２工程で用いたエッ
チング液を使用し上記金属層（13）を除去することによ
り上記マスク（15）も同時に除去し得る。FIG. 3D shows the final step, in which the metal layer (13) and the mask (15) are removed. Such removal can also remove the mask (15) at the same time by removing the metal layer (13) using the etching solution used in the second step.
このように本実施例では保護膜（16）を所望の基板（1
2）表面上にのみ形成できる。また電極（11）上の金属
層（13）は保護膜（16）形成後でもその表面が露出して
いるためその除去は簡単に行える。As described above, in this embodiment, the protective film (16) is formed on the desired substrate (1
2) Can be formed only on the surface. Further, since the surface of the metal layer (13) on the electrode (11) is exposed even after the protective film (16) is formed, its removal can be easily performed.
（ヘ） 発明の効果 本発明を用いることにより半導体基板表面に選択的に保
護膜を形成でき、不所望な部分への形成を防ぐことがで
きる。(F) Effect of the Invention By using the present invention, a protective film can be selectively formed on the surface of a semiconductor substrate, and formation on an undesired portion can be prevented.
第１図及び第２図は従来例を示す断面図、第３図Ａ乃至
Ｄは本発明の一実施例を示す工程別断面図である。 （12）……基板、（13）……金属層、（14）……開孔
部、（15）……マスク、（16）……保護膜。1 and 2 are cross-sectional views showing a conventional example, and FIGS. 3A to 3D are cross-sectional views by process showing one embodiment of the present invention. (12) …… Substrate, (13) …… Metal layer, (14) …… Opening, (15) …… Mask, (16) …… Protective film.
Claims (1)
該基板上に開孔部を有するマスクを形成する工程、上記
基板及びマスクに対しては非エッチング性であるエッチ
ング液を用いて上記金属層を選択的にエッチングする工
程、上記開孔部に沿って上記基板を分離する工程、少な
くとも上記基板の露出面上に保護膜を形成する工程、上
記金属層を上記エッチング液を用いて完全に除去する工
程を備えたことを特徴とする半導体基板の保護膜形成方
法。1. A step of forming a metal layer on one main surface of a substrate,
Forming a mask having an opening on the substrate, selectively etching the metal layer using an etching solution that is non-etching to the substrate and the mask, along the opening Protection of the semiconductor substrate, which comprises a step of separating the substrate by using the etching solution, a step of forming a protective film on at least the exposed surface of the substrate, and a step of completely removing the metal layer using the etching solution. Film forming method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22478283A JPH0785508B2 (en) | 1983-11-28 | 1983-11-28 | Method for forming protective film on semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22478283A JPH0785508B2 (en) | 1983-11-28 | 1983-11-28 | Method for forming protective film on semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60116186A JPS60116186A (en) | 1985-06-22 |
| JPH0785508B2 true JPH0785508B2 (en) | 1995-09-13 |
Family
ID=16819119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22478283A Expired - Lifetime JPH0785508B2 (en) | 1983-11-28 | 1983-11-28 | Method for forming protective film on semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0785508B2 (en) |
-
1983
- 1983-11-28 JP JP22478283A patent/JPH0785508B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60116186A (en) | 1985-06-22 |
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