JPH089769B2 - Preparation method of composition-modulated nitrided alloy film - Google Patents
Preparation method of composition-modulated nitrided alloy filmInfo
- Publication number
- JPH089769B2 JPH089769B2 JP62171397A JP17139787A JPH089769B2 JP H089769 B2 JPH089769 B2 JP H089769B2 JP 62171397 A JP62171397 A JP 62171397A JP 17139787 A JP17139787 A JP 17139787A JP H089769 B2 JPH089769 B2 JP H089769B2
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- Prior art keywords
- composition
- modulated
- film
- alloy film
- gas
- Prior art date
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- 229910045601 alloy Inorganic materials 0.000 title claims description 26
- 239000000956 alloy Substances 0.000 title claims description 26
- 238000002360 preparation method Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 101000588067 Homo sapiens Metaxin-1 Proteins 0.000 claims description 3
- 102100031603 Metaxin-1 Human genes 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000005546 reactive sputtering Methods 0.000 claims description 2
- 230000005389 magnetism Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は磁気ヘッド等に適した軟磁性を示す組成変調
窒化合金膜の作製法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a composition-modulated nitride alloy film exhibiting soft magnetism suitable for magnetic heads and the like.
従来の技術 近年組成変調窒化合金膜の発明がなさた（日本特許出
願61−54054,199631）、従来にない優れた諸特性を有す
る軟磁性合金膜となる事が知られている。しかしながら
この膜の作製は一般的には第２図に示したような方法が
とられており、膜形成に時間がかかる欠点があった。以
下第２図を用いて従来作製法について説明を行なう事と
する。2. Description of the Related Art In recent years, a composition-modulated nitrided alloy film has been invented (Japanese Patent Application No. 61-54054, 199631), and it is known that a soft magnetic alloy film having unprecedented excellent properties will be obtained. However, the method shown in FIG. 2 is generally used for the production of this film, and there is a drawback that the film formation takes time. The conventional manufacturing method will be described below with reference to FIG.
第２図ａはスパッター装置の真空チャンバーの概略図
であり、１は基板ホルダー、２は基板、３は合金ターゲ
ットである。真空チャンバー内にはArガスが導入されス
パッターが行なわれるが、この時電磁弁５のON−OFFに
より一定の間隔で周期的にN2ガスをArガス中に混合して
ターゲット３をスパッターする事により組成変調窒化合
金膜が基板２上に形成される。しかしながら単にN2ガス
混合用の電磁弁をON−OFFして形成した組成変調窒化合
金膜は軟磁性を示さない。これは弁５を閉じた後も真空
チャンバー内にN2ガスがしばらく残存し、次に弁５を開
けるまでの間隔が短かいと明確な組成変調膜となりにく
く、組成変調が明確でないと膜が軟磁性を示さない為で
ある。従って同図ｂに示したようなシーケンスでシャッ
ター６の開閉を併用した膜形成法がとられている。即ち
まず弁５を開いてN2ガスを混合した後、一定分圧となる
までt1′秒待った後シャッター６を開いてt1秒スパッタ
して窒化層を形成し、その後電磁弁５とシャッター６を
閉じてチャンバー内のN2ガスがなくなるまでt2′秒待っ
た後、シャッター６を開いてt2秒スパッタして非窒化層
を形成し、以下これをくりかえして基板２上に組成変調
窒化膜を形成するものである。FIG. 2a is a schematic view of the vacuum chamber of the sputtering apparatus, in which 1 is a substrate holder, 2 is a substrate, and 3 is an alloy target. Ar gas is introduced into the vacuum chamber and sputtering is performed. At this time, by turning ON / OFF the solenoid valve 5, N 2 gas is periodically mixed with Ar gas at regular intervals to sputter the target 3. Thus, a composition-modulated nitride alloy film is formed on the substrate 2. However, the composition-modulated nitride alloy film formed simply by turning on and off the solenoid valve for mixing N 2 gas does not exhibit soft magnetism. This is because the N 2 gas remains in the vacuum chamber for a while even after the valve 5 is closed, and it is difficult to form a clear composition-modulated film if the interval between opening of the valve 5 is short. This is because it does not exhibit soft magnetism. Therefore, a film forming method is used in which the shutter 6 is opened and closed in the sequence shown in FIG. That is, first open the valve 5 and mix N 2 gas, wait t 1 ′ seconds until a constant partial pressure is reached, then open the shutter 6 and sputter for t 1 second to form a nitride layer, and then the solenoid valve 5 and the shutter. After closing 6 and waiting for t 2 ′ seconds until the N 2 gas in the chamber is exhausted, the shutter 6 is opened and sputtered for 2 seconds to form a non-nitrided layer. It forms a film.
発明が解決しようとする問題点 このようにして作製した組成変調窒化膜は、一層の層
厚が薄いほど優れた軟磁性を示す。従って上述のt1,t2
は比較的短かく、一般的にt1′,t2′の方を長くとる必
要がある。しかしながら実際に膜が形成されるのは、t1
及びt2秒の間であり、t1′及びt2′は待ち時間である
為、生産性の悪い作製法であった。Problems to be Solved by the Invention The composition-modulated nitride film thus manufactured exhibits more excellent soft magnetism as the thickness of one layer is smaller. Therefore, the above t 1 , t 2
Is relatively short, and generally t 1 ′ and t 2 ′ need to be longer. However, when the film is actually formed, t 1
And t 2 seconds, and t 1 ′ and t 2 ′ are waiting times, which was a production method with poor productivity.
本発明は上述のような従来法の生産性の悪い欠点を改
良し、効率良く組成変調窒化合金膜を形成する事を可能
とするものである。The present invention improves the disadvantage of the conventional method having poor productivity as described above and makes it possible to efficiently form a composition-modulated nitride alloy film.
問題点を解決するための手段 原子組成比が次式 MaTbXc で表わされる合金ターゲットを用い、Arガス中にN2ガス
を混合し、反応スパッター法にて窒化合金膜を形成する
際に基板に負のバイアス電圧VE（|VE|＞50V）を一定の
間隔で周期的に印加する事により、膜厚方向に組成が変
調された平均原子組成比が次式で表される軟磁気特性を
有する組成変調窒化合金膜 ＭＴＸＮ を形成する。Means atomic composition ratio for solving the problems using an alloy target represented by the following formula M a T b X c, a N 2 gas is mixed with Ar gas to form a nitride alloy film at a reaction sputtering At this time, a negative bias voltage V E (| V E |> 50 V) is periodically applied to the substrate at regular intervals, and the average atomic composition ratio in which the composition is modulated in the film thickness direction is expressed by the following equation. A composition-modulated nitrided alloy film MTXN having soft magnetic characteristics is formed.
ただし ＭはFe,Co,Niより成る群より選ばれた１種以上の元素 ＴはTi,Zr,Hf,V,Nb,Ta,Cr,Mo,W,Mnより成る群より選ば
れた１種以上の元素ＸはB,Al,C,Si,Ge,Snより成る群よ
り選ばれた１種以上の元素 ＮはＮ（窒素）であって、 a,b,cは原子組成パーセントでそれぞれ 75ａ94 ０ｂ20 ０ｃ25 ６ｂ＋ｃ25 であり、又，，，は平均原子組成パーセントで
それぞれ 6594 ０20 ０25 0.120 ６＋＋35 である。However, M is one or more elements selected from the group consisting of Fe, Co and Ni. T is one kind selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Mn. The above element X is at least one element selected from the group consisting of B, Al, C, Si, Ge, and Sn. N is N (nitrogen), and a, b, and c are atomic composition percentages of 75a94. 0b20 0c25 6b + c25, and the average atomic composition percentages are 6594 020 025 0.120 6 ++ 35, respectively.
作用 基板に負のバイアス電圧を印加すると、形成される膜
中にＮ元素が入り難くなり、組成変調を明確にすること
ができ、工程上の時間的ロスを減少させることができ
る。When a negative bias voltage is applied to the substrate, it becomes difficult for N element to enter the formed film, compositional modulation can be made clear, and time loss in the process can be reduced.
実 施 例 本発明は、基板側に負のバイアス電圧VEを印加すると
膜中にＮ元素が入りにくくなる点に着目し、バイアス電
圧VEを周期的にON−OFFして組成変調膜を形成しようと
するものである。明確な組成変調にはN2ガス弁のON−OF
Fとこのバイアス電圧VEのON−OFFを併用する事が好まし
いが、N2ガスは常に混合したままでもVEのON−OFFだけ
でも効果があり、極めて簡便に組成変調膜の形成を可能
とするものである。第１図を用いて本発明組成変調窒化
合金膜作製法の一例を以下に説明する。第１図ａはスパ
ッター装置の概略を示すもので１は基板ホルダー、２は
基板、３は合金ターゲットである。スパッターはArガス
をチャンバーに導入して行なわれるが、この時バイテス
電源４より基板ホルダーに負の電圧VEを同図ｂ及びｃに
示したように周期的にON−OFFし、N2ガスは同図ｂに示
したように同図ａの弁５を開いて常にArガス中に一定量
混合したままでスパッタしてもよいし、又より明確な組
成変調膜とするには同図ｃに示したように電磁弁５のON
−OFFを併用してN2ガスを混合時には無バイアスで、又N
2ガスを混合していない時はバイアスVEを印加するよう
に同期させてスパッターを行なえばよい。このようにし
て作製した膜の深さ方向のプロファイルをAES（オージ
ェ電子分光）により調べた所組成が変調されている事を
確認した。Example In the present invention, attention is paid to the fact that it becomes difficult for N element to enter the film when a negative bias voltage V E is applied to the substrate side, and the bias voltage V E is periodically turned on and off to form a composition modulation film. It is the one to be formed. ON-OF of N 2 gas valve for clear composition modulation
It is preferable to use F and ON / OFF of this bias voltage V E together, but N 2 gas is effective even if it is always mixed or V E is turned ON / OFF, and composition modulation film can be formed very easily. It is what An example of the method of producing the composition-modulated nitrided alloy film of the present invention will be described below with reference to FIG. FIG. 1a shows an outline of a sputtering apparatus, 1 is a substrate holder, 2 is a substrate, and 3 is an alloy target. Sputter is carried out by introducing Ar gas into the chamber, periodically ON-OFF as shown a negative voltage V E to the substrate holder than the time Baitesu supply 4 in FIG b and c, N 2 gas As shown in FIG. 7B, the valve 5 in FIG. 7A may be opened to always sputter the Ar gas while mixing it in a fixed amount, or in order to obtain a clearer composition-modulating film, in FIG. Turning on the solenoid valve 5 as shown in
-OFF is also used, and when N 2 gas is mixed, there is no bias and N
When the two gases are not mixed, the sputtering may be performed in synchronization so that the bias V E is applied. When the profile of the film thus formed in the depth direction was examined by AES (Auger electron spectroscopy), it was confirmed that the composition was modulated.
なおどのような組成の膜でも組成変調を行なえば軟磁
性を示す訳ではなくそのような組成変調膜は次式で表さ
れるような組成である。It should be noted that even if a film having any composition is subjected to composition modulation, it does not exhibit soft magnetism, and such a composition modulation film has a composition represented by the following formula.
ＭＴＸＮ ……（１） ただしＭ＝Fe,Co,Niのうちの１種以上の元素 Ｔ＝Ti,Zr,Hf,V,Nb,Ta,Cr,Mo,W,Mnのうちの１種以上の
元素 Ｘ＝B,Al,C,Si,Ge,Snのうちの１種以上の元素 Ｎ＝Ｎ（窒素） であって、，，，は平均組成（原子％）で 6594 ……（２） ０20 ……（３） ０25 ……（４） 0.120 ……（５） ６＋＋35 ……（６） である。MTXN (1) However, one or more elements of M = Fe, Co, Ni T = Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn Element X = B, Al, C, Si, Ge, Sn One or more elements N = N (nitrogen), and ,,, are average compositions (atomic%) 6594 ...... (2) 020 (3) 025 (4) 0.120 (5) 6 ++ 35 (6).
ここに65（or＋＋35）でかつ20,
25は膜が十分高い飽和磁化を有するのに必要な条件、
94（or6＋＋）は膜が軟磁性を示す為に必
要な条件であり、 20は膜が内部応力により基板から剥離しない為に必
要な条件、又0.1は膜が窒化膜としての特性を示す
のに必要な条件である。このような合金膜は次式で示す
ような組成のターゲット合金 MaTbXc ……（７） を用いてN2ガスを混合した反応性スパッタ法により形成
される。Here 65 (or + 35) and 20,
25 is a condition necessary for the film to have a sufficiently high saturation magnetization,
94 (or6 ++) is a condition necessary for the film to exhibit soft magnetism, 20 is a condition necessary for the film not to be separated from the substrate due to internal stress, and 0.1 is a property for the film to be a nitride film. This is a necessary condition. Such alloy film is formed by reactive sputtering with a mixture of N 2 gas using the formula: target alloy compositions shown in M a T b X c ...... ( 7).
ただし元素M,T,Xの定義は（１）式のものと同じであ
り、a,b,cは原子％ 7594 ……（８） ０20 ……（９） ０25 ……（10） ６＋25 ……（11） である。However, the definitions of the elements M, T, X are the same as those in formula (1), and a, b, c are atomic% 7594 …… (8) 020 …… (9) 0.25 …… (10) 6 + 25 …… (11)
なお印加するバイアス電圧は、効果が明確に表われる
には|VE|が50V以上である事が望ましい。It is desirable that the applied bias voltage has | V E | of 50 V or more in order to clearly show the effect.
＜実施例１＞ ターゲットにCo80Nb14Ta2Zr4を用い、Arガス中にN2ガ
スを分圧で10％混合したガスをスパッタリングガスとし
て用い全圧1.0×10-2TorrでスパッタしCo−Nb−Ta−Zr
の窒化膜を基板への印加バイアス電圧なしで作製した。
次に同様の方法で窒化膜を形成する際、上述の印加バイ
アス電圧VEを30秒間隔で第１図ｂに示したように周期的
にON−OFFさせて膜を形成した。このときVEとしては−2
0,−50,−200Vの３種類のものを用いて膜を形成した。<Example 1> Co 80 Nb 14 Ta 2 Zr 4 was used as a target, and a gas obtained by mixing 10% of N 2 gas in Ar gas at a partial pressure was used as a sputtering gas. Sputtering was performed at a total pressure of 1.0 × 10 -2 Torr. Co-Nb-Ta-Zr
The nitride film was prepared without applying a bias voltage to the substrate.
Next, when the nitride film was formed by the same method, the above-mentioned applied bias voltage V E was periodically turned on and off at intervals of 30 seconds as shown in FIG. 1b to form the film. At this time, V E is −2
A film was formed using three types of 0, -50, and -200V.
更に第１図ｃに示したように膜形成の際にN2ガスの混
合とバイアス電圧の印加を同期させ、N2ガスを混合した
際は無バイアスとし、N2ガスを混合しない時はバイアス
を印加し、その他の条件は同様にして膜の形成を行なっ
た。Furthermore synchronize the application of the mixture and the bias voltage of the N 2 gas as the time of film formation shown in FIG. 1 c, when a mixture of N 2 gas was set to no bias, when not mixed with N 2 gas is biased Was applied, and the film was formed under the other conditions in the same manner.
得られた膜の深さ方向の組成プロファイルをCo,Nb,N
についてAES（オージェ分光分析）により調べた結果を
第３図に示す。図に示した結果より明らかなように同図
ａのバイアス印加なし即ちVE＝０のものでは組成変調が
観測されず、又同図ｂのVE＝−20Vの電圧をON−OFFした
ものでは僅かに組成変調が観測されるが明確ではなく、
一応明確な組成変調が観測されたのは同図c,dのように|
VE|が50V以上の電圧をON−OFFして作製した膜であっ
た。又同図e,fのようにN2ガスのArガス中への混合のON
−OFFと同期してバイアス電圧のOFF−ONを行なった膜
は、更に明確な組成変調を示す事がわかった。The composition profile in the depth direction of the obtained film was calculated as Co, Nb, N
Fig. 3 shows the result of examination by AES (Auger spectroscopy). As is clear from the results shown in the figure, composition modulation is not observed without bias application, that is, with V E = 0 in FIG. 7A, and with V E = −20V in FIG. In, a slight compositional modulation is observed, but it is not clear,
The clear compositional modulation was observed once, as shown in c and d in the same figure.
The film was produced by turning on and off a voltage with V E | of 50 V or more. Also, as shown in e and f of the same figure, the mixing of N 2 gas into Ar gas is turned on.
It was found that the film in which the bias voltage was turned OFF and ON in synchronization with −OFF exhibited more distinct compositional modulation.
このようにして作製した膜を500℃で１時間磁場中で
熱処理し、その処理後の抗磁力HCを測定した。結果を表
−１に示す。The film thus produced was heat-treated in a magnetic field at 500 ° C. for 1 hour, and the coercive force H C after the treatment was measured. The results are shown in Table 1.
表に示した結果と第３図に示した結果より明確な組成
変調構造を有するものほど優れた軟磁性を示す事がわか
る。 From the results shown in the table and the results shown in FIG. 3, it can be seen that those having a clear composition modulation structure exhibit superior soft magnetism.
＜実施例２＞ 実施例１と同様の実験をターゲットに Co68Mn7B25,Fe94Si6,Fe88Nb6Si6,Co80Nb13Hf7を用いて
行なったところ、実施例１とほぼ同様の結果を得て、|V
E|50Vの負のバイアス電圧を周期的に印加したものは
組成変調窒化合金膜となる事がわかり、又熱処理後、こ
れらの膜はHC20eの軟磁気特性を示した。<Example 2> The same experiment as in Example 1 was carried out using Co 68 Mn 7 B 25 , Fe 94 Si 6 , Fe 88 Nb 6 Si 6 , and Co 80 Nb 13 Hf 7 as a target. With almost the same result as | V
It was found that the composition-modulated nitrided alloy films were obtained by periodically applying a negative bias voltage of E | 50V, and after heat treatment, these films exhibited the soft magnetic property of H C 20e.
発明の効果 以上実施例を用いて説明を行なったように本発明は従
来法のように時間的にあき時間をつくる事なく成膜が出
来、かつ組成変調膜を作製する事を可能にするものであ
る。EFFECTS OF THE INVENTION As described above with reference to the embodiments, the present invention makes it possible to form a film without creating a time gap as in the conventional method and to produce a composition modulation film. Is.
第１図は本発明法による組成変調窒化合金膜作製法の説
明図、第２図は従来法による組成変調窒化合金膜作製法
の説明図、第３図は種々の窒化合金膜のオージェ分光分
析による深さ方向の組成プロファイルを示す図である。 １……基板ホルダー、２……基板、３……合金ターゲッ
ト、４……バイアス電源、５……弁。FIG. 1 is an explanatory view of a composition-modulated nitrided alloy film production method according to the present invention, FIG. 2 is an explanatory view of a conventional composition-modulated nitrided alloy film production method, and FIG. 3 is an Auger spectroscopic analysis of various nitrided alloy films. It is a figure which shows the composition profile of the depth direction by. 1 ... Substrate holder, 2 ... Substrate, 3 ... Alloy target, 4 ... Bias power supply, 5 ... Valve.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小俣 雄二 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭58−27941（ＪＰ，Ａ) 特開 昭59−13608（ＪＰ，Ａ) 特開 昭58−73030（ＪＰ，Ａ) 特開 昭62−57144（ＪＰ，Ａ) 特開 昭59−41821（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuji Omata 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-58-27941 (JP, A) JP-A-59-13608 (JP, A) JP 58-73030 (JP, A) JP 62-57144 (JP, A) JP 59-41821 (JP, A)
Claims (3)
混合し、反応スパッター法にて窒化合金膜を形成する際
に、基板に負のバイアス電圧VEを一定の間隔で周期的に
印加する事により、膜厚方向に組成が変調された平均原
子組成比が次式 ＭＴＸＮ で表される軟磁気特性を有する組成変調窒化合金膜を形
成し、前記組成変調窒化合金膜の軟磁気特性を向上させ
る事を特徴とする組成変調窒化合金膜の作製法。 ただし、ＭはFe、Co、Niより成る群より選ばれた１種以
上の元素、 ＴはTi、Zr、Hf、Ｖ、Nb、Ta、Cr、Mo、Ｗ、Mnより成る
群より選ばれた１種以上の元素、 ＸはＢ、Al、Ｃ、Si、Ge、Snより成る群より選ばれた１
種以上の元素、 ＮはＮ（窒素）であって、 ａ、ｂ、ｃは原子組成パーセントでそれぞれ 75≦ａ≦94、０≦ｂ≦20、０≦ｃ≦25、６≦ｂ＋ｃ≦25 であり、又、、、は原子組成パーセントでそれ
ぞれ 65≦≦94、０≦≦20、０≦≦25、0.1≦≦20、
６≦＋＋≦35 である。1. When an alloy target whose atomic composition ratio is represented by the following formula MaTbXc is used and N 2 gas is mixed in Ar gas to form a nitride alloy film by reactive sputtering, a negative alloy film is formed on the substrate. By periodically applying a bias voltage V E at regular intervals, a composition-modulated nitrided alloy film having soft magnetic characteristics whose composition is modulated in the film thickness direction and whose average atomic composition ratio is represented by the following formula MTXN is formed. And improving the soft magnetic properties of the composition-modulated nitrided alloy film. However, M is one or more elements selected from the group consisting of Fe, Co and Ni, and T is selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Mn. 1 or more elements, X is selected from the group consisting of B, Al, C, Si, Ge and Sn 1
At least one element, N is N (nitrogen), and a, b, and c are atomic composition percentages of 75 ≦ a ≦ 94, 0 ≦ b ≦ 20, 0 ≦ c ≦ 25, and 6 ≦ b + c ≦ 25, respectively. , And are atomic composition percentages of 65 ≦≦ 94, 0 ≦≦ 20, 0 ≦≦ 25, 0.1 ≦≦ 20,
6 ≦ ++ ≦ 35.
|VE|が、|VE|＞50Vであることを特徴とする特許請求の
範囲第１項記載の組成変調窒化合金膜の作製法。2. The absolute value of the bias voltage V E applied periodically.
| V E | is | V E |> 50 V. The method for producing a composition-modulated nitrided alloy film according to claim 1, wherein | V E |> 50 V.
ス電圧印加のON−OFFに反対の位相で同期してOFF−ONす
る事を特徴とする特許請求の範囲第１項記載の組成変調
窒化合金膜の作製法。3. The inflow of N 2 gas mixed in Ar gas is also turned OFF-ON in synchronism with the ON-OFF of bias voltage application in the opposite phase. Fabrication method of composition-modulated nitride alloy film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62171397A JPH089769B2 (en) | 1987-07-09 | 1987-07-09 | Preparation method of composition-modulated nitrided alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62171397A JPH089769B2 (en) | 1987-07-09 | 1987-07-09 | Preparation method of composition-modulated nitrided alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6415366A JPS6415366A (en) | 1989-01-19 |
| JPH089769B2 true JPH089769B2 (en) | 1996-01-31 |
Family
ID=15922398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62171397A Expired - Fee Related JPH089769B2 (en) | 1987-07-09 | 1987-07-09 | Preparation method of composition-modulated nitrided alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH089769B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2789806B2 (en) * | 1990-09-28 | 1998-08-27 | 松下電器産業株式会社 | Fabrication method of soft magnetic nitride alloy film |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06104870B2 (en) * | 1981-08-11 | 1994-12-21 | 株式会社日立製作所 | Method for producing amorphous thin film |
| JPS5873030A (en) * | 1981-10-27 | 1983-05-02 | Kokusai Denshin Denwa Co Ltd <Kdd> | Optical magnetic recording medium |
| JPS5913608A (en) * | 1982-07-12 | 1984-01-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of thin metallic nitride film |
| JPS6257144A (en) * | 1985-09-06 | 1987-03-12 | Hitachi Ltd | Photomagnetic recording medium and its production |
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| Publication number | Publication date |
|---|---|
| JPS6415366A (en) | 1989-01-19 |
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