「transition region」に関連した英語例文の一覧と使い方(7ページ目) - Weblio英語例文検索

A control device for an engine includes: a suppression means (for instance, a valve timing control means 71) to change a predetermined control amount influencing occurrence of abnormal combustion in an abnormal combustion risk region PA nearer to low rotation and high load; and a prediction means 73 to predict transition of the operating condition of the engine to the abnormal combustion risk region PA by decrease of the rotation speed based on the condition change of an automatic transmission 30.例文帳に追加

本発明のエンジンの制御装置は、低回転かつ高負荷寄りの異常燃焼危惧領域ＰＡで、異常燃焼の発生を左右する所定の制御量を変化させる抑制手段（例えばバルブタイミング制御手段７１）と、自動変速機３０の状態変化に基づく回転速度の低下により、エンジンの運転状態が異常燃焼危惧領域ＰＡに移行することを予測する予測手段７３とを備える。 - 特許庁

To provide a novel cholesteric liquid crystal compound having a high glass transition temperature and a selective reflection band in the visible light region, and exhibiting electric conductivity as an organic semiconductor, and a thin film containing the same, further a fluorescent material and a light emitting element using the same.例文帳に追加

高いガラス転移温度を有し、室温付近で安定なコレステリック薄膜が形成可能であり、かつ、可視光波長域に選択反射バンドを有し、有機半導体としての電気伝導性を示す新規なコレステリック液晶化合物およびこのものを含有する薄膜更にはこの薄膜を利用した蛍光体や発光素子を提供する。 - 特許庁

A plurality of sets of volume data obtained by imaging the subject on different imaging dates or imaging times are analyzed to calculate an index value (stenosis rate, calcified region volume) that represents a state of the subject at each imaging date and time and to generate information, such as difference or an increase/decrease rate, showing transition in the index value.例文帳に追加

被検体を撮影日または撮影時刻を異ならせて複数回撮影することにより取得された複数のボリュームデータを解析することにより、各撮影日時における被検体の状態を示す指標値(狭窄率、石灰化領域体積)を算出し、指標値の変移を示す差分、増減率等の情報を生成する。 - 特許庁

The method and apparatus for generating positive ions and negative ions include electrodes 2, 3 that are separated by a gap G and to the electrodes, an alternating ionizing voltage 10 is supplied at a frequency indicative of a residual time during transition in which generated ions are moved into the gap between the electrodes and ions are accumulated in substantially the center region of the gap.例文帳に追加

陽イオンと陰イオンを生成するための方法と装置は、間隙Ｇによって離隔した電極２、３を含み、これらの電極には、生成されたイオンを電極間の間隙の中に移動させて、前記間隙の実質的に中央領域の中にイオンを蓄積する推移中の残留時間を示す周波数で、交流イオン化電圧１０が供給される。 - 特許庁

To provide a phase transition optical recording medium that can sufficiently secure the CNR in a state of a low cross-erase and a high contrast because recrystallization is hardly caused to a molten region at recording, have a sufficiently high erasure rate at a high linear velocity, excellent overwrite (OW) cycle characteristics and environment resistance and execute high density, large capacity and high speed overwrite.例文帳に追加

記録時の溶融領域の再結晶化がほとんどないためクロスイレースが低く、かつコントラストが高くＣＮＲを十分に確保でき、高い線速における消去率が十分に高く、さらにオーバーライト（ＯＷ）サイクル特性及び耐環境性に優れ、高密度・大容量・高速オーバーライト可能な相変化記録媒体を提供する。 - 特許庁

As for the bushing insert, a ventilation hole to ventilate a cavity formed between the elbow cuff and the transition shoulder part of the bushing insert by means of atmospheric air, is installed, by the above, decrease of pressure in the connection region is avoided, and deterioration of dielectric strength of air in the cavity is avoided, accordingly, the occurrence of the flashover is prevented.例文帳に追加

ブッシング・インサートは、エルボ・カフとブッシング・インサートの移行肩部分との間に形成される空洞を大気により通気させるための通気口が設けられ、それによって、接続領域内の圧力の低下を回避するとともに空洞内の空気の絶縁耐力の低下を回避し、したがってフラッシュオーバの発生を防止するようにする。 - 特許庁

An impurity concentration profile, at which an inclination 22a where the impurity concentration approximately rectilinearly falls with an increase in the distance from the surface 1a of the semiconductor substrate 1 (with a decrease in depth D) crosses a curve 21a of a transition region at the boundary between the semiconductor substrate 1 and the semiconductor thin film 2, is obtained.例文帳に追加

この結果半導体基板１と半導体薄膜２との界面における遷移領域のカーブ２１ａに対して、半導体基板１の表面１ａからの距離が大きくなるにつれて（深さＤが小さくなるにつれて）略直線状に不純物濃度が低下していく傾斜２２ａが交差する不純物濃度プロファイルが得られる。 - 特許庁

As for the bushing insert, a ventilation hole to ventilate a cavity formed between the elbow cuff and the transition shoulder part of the bushing insert by means of atmospheric air, is installed, and by that, decrease of pressure in the connection region is avoided, and deterioration of dielectric strength of air in the cavity is avoided, and therefore, occurrence of flashover is prevented.例文帳に追加

ブッシング・インサートは、エルボ・カフとブッシング・インサートの移行肩部分との間に形成される空洞を大気により通気させるための通気口が設けられ、それによって、接続領域内の圧力の低下を回避するとともに空洞内の空気の絶縁耐力の低下を回避し、したがってフラッシュオーバの発生を防止するようにする。 - 特許庁

In an apparatus for generating a circulation flow in the flow duct 18 constituting the flue gas outlet 10 of an incineration plant, two wall parts 26 are formed in the transition region 20 from a combustion chamber 12 to the flue gas outlet 10 while facing each other at a wall width b for defining the flow duct wherein the wall part 26 has a first wall part of length l1.例文帳に追加

焼却プラントの煙道ガス出口（１０）を構成するフローダクト（１８）内に循環流を生成する装置であって、燃焼室（１２）から煙道ガス出口（１０）への遷移領域（２０）には、フローダクトを区画する壁幅ｂで対向する二つの壁部（２６）が形成されており、この壁部（２６）は長さｌ_1の第１壁部を有している。 - 特許庁

The solar cell element having the antireflection film 5 on one main surface side of the semiconductor substrate 1 is configured so that an intermediate oxide layer 3 and a density transition region 4 containing the main component of the intermediate oxide layer 3 and the main component of the antireflection film 5 are successively provided from the semiconductor substrate 1 between the semiconductor substrate 1 and the antireflection film 5.例文帳に追加

半導体基板１の一主面側に反射防止膜５を有して構成される太陽電池素子であって、半導体基板１及び反射防止膜５の間に、中間酸化物層３と、該中間酸化物層３の主成分と反射防止膜５の主成分とを含有してなる密度遷移領域４とを、半導体基板１から順次有するように構成する。 - 特許庁

The separator 3 for the fuel cell obtained by nitriding the surface of a substrate 10 comprising alloy containing a transition metal element selected from Fe, Cr, Ni, and Mo has a nitrided layer 11 having hexagonal system crystal structure in the depth direction from the surface 10a of the substrate 10, and the substrate 10 contains nitrogen in an interface region 10b between the substrate 10 and the nitrided layer 11.例文帳に追加

Ｆｅ、Ｃｒ、Ｎｉ及びＭｏの中から選ばれた遷移金属元素を含む合金からなる基材１０の表面を窒化処理することにより得られる燃料電池用セパレータ３であって、基材１０の表面１０ａから深さ方向に立方晶の結晶構造を有する窒化層１１を備え、基材１０は窒化層１１との界面領域１０ｂに窒素を含有する。 - 特許庁

An optical switch 10 having a KTN (KTaNbO) material which induces phase transition between a paraelectric phase and a ferroelectric phase includes an AC driving circuit 17 and heating electrodes 15, 16 electrically connected to the AC driving circuit 17 and disposed near an operational region which is interposed between a phase modulation electrode 13 and a phase modulation electrode 14 and which includes a core 12.例文帳に追加

常誘電相と強誘電相との間で相転移を起こすＫＴＮ材料を備える光スイッチ１０は、交流駆動回路１７と、交流駆動回路１７に電気的に接続され、位相変調用電極１３と位相変調用電極１４とに挟まれ、コア１２を含む、動作領域の近傍に配置された、加熱用電極１５および１６とを備える。 - 特許庁

The polycarbonate resin composition contains titanium oxide and polycarbonate resin containing structural units (a) derived from a dihydroxy compound having a region represented by formula (1) in part of the structure, and having a glass transition temperature Tg of <145°C, wherein the titanium oxide is contained in an amount of 0.01-100 pts.wt. based on 100 pts.wt. of the polycarbonate resin.例文帳に追加

構造の一部に下記式（１）で表される部位を有するジヒドロキシ化合物に由来する構造単位（ａ）を含み、ガラス転移温度Ｔｇが１４５℃未満であるポリカーボネート樹脂及び酸化チタンを含むポリカーボネート樹脂組成物であって、前記ポリカーボネート樹脂１００重量部に対して前記酸化チタンを０．０１重量部以上１００重量部以下含有する、ポリカーボネート樹脂組成物による。 - 特許庁

In the manufacturing method of the silicon epitaxial wafer, an angle for overlapping the normal vector α of a substrate main surface MP with a normal vector β on the inner side face in the longitudinal direction of the trench 11 filled with the charged epitaxial layer 3 by a minimum rotary angle is defined as a transition face normal angle region.例文帳に追加

基板主表面ＭＰの法線ベクトルαを、充填エピタキシャル層３で満たされるトレンチ１１の長手方向内側面の法線ベクトルβに、最小の回転角度にて重ねるための角度区間を遷移面法線角度域として定義し、トレンチの長手方向の開口エッジをなす領域を、該遷移面法線角度域にて法線ベクトルが連続的に変化する遷移面領域として考える。 - 特許庁

The crystal grains having a uniform particle size and a uniform interval r are formed and the grain boundary width (the magnetization transition region width W) between grains is accurately adjusted by appropriately setting the distance between a substrate 1 plated with metal of NiP or the like and a copper member 2, depositing Cu deposits 4 on the substrate 1 at a uniform interval r and replacing the Cu deposits 4 with magnetic particles 10.例文帳に追加

ＮｉＰ等の金属めっきされた基板１と銅部材２との距離を適切に設定して、基板１上にＣｕ析出物４を均等間隔ｒで析出させ、Ｃｕ析出物４を磁性粒子１０に置き換えることにより、均一な粒径と均等間隔ｒとをもつ結晶粒を形成し、結晶粒間の粒界幅（磁化遷移領域幅Ｗ）を精度良く調整する。 - 特許庁

In the insulating film structure formed with, on a substrate 1 of a wideband gap semiconductor material, an insulating film 4 using a silicon dioxide film ≥90% at a composition ratio as a matrix, and mainly formed of nitrogen ≤10% includes a transition region where a silicon composition ratio and a carbon composition ratio rapidly change in the vicinity of an interface between the insulating film 4 and the wideband gap semiconductor material substrate 1.例文帳に追加

ワイドバンドギャップ半導体材料の基板１上に、組成比で９０％以上の二酸化珪素膜を母体とし且つ１０％以下の窒素で主に構成される絶縁膜４を形成した絶縁膜構造体であって、絶縁膜４とワイドバンドギャップ半導体材料基板１との界面近傍において、珪素組成比、及び、炭素組成比が急激に変化する遷移領域を有する。 - 特許庁

The recording apparatus includes a recording controlling means for identifying a description of a medium, a track pitch and linear density of tracks and controlling recording operation of a recording means by reading information for identifying the description of the medium as a phase transition recording medium having the tracks wobbling based on address information and information for identifying the track pitch and linear density of the tracks when recording is performed in a recordable region.例文帳に追加

記録可能領域に記録を行う際、アドレス情報に基づいてウォブリングされたトラックを有する相変化記録媒体としての媒体種別を識別するための情報、及びトラックのトラックピッチ及び線密度を識別するための情報を読み込ことにより媒体種別、及びトラックのトラックピッチ及び線密度を識別して記録手段の記録動作を制御する記録制御手段を備える。 - 特許庁

An organism adhesion prevention device comprises an organism adhesion prevention part 11 as a cathode, an electrode 12 as an anode that is opposed to the organism adhesion prevention part, and a power feeding device 13 that continuously applies direct current between the organism adhesion prevention part and the electrode, such that an electrolysis reaction on a surface of the organism adhesion prevention part is in a transition region during implementation of the organism adhesion prevention method.例文帳に追加

カソードとされる生物付着防止部分１１と、該生物付着防止部分に対して配置されたアノードとしての電極１２と、生物付着防止実施環境に於ける前記生物付着防止部分の表面での電気分解反応が遷移域となる様、前記生物付着防止部分と前記電極間に常時直流電流を通電する電力供給装置１３とを具備する。 - 特許庁

The substrate for display device has a plastic film having ≥70% average light transmittance in the wavelength region of 400-700 nm and ≥100°C glass transition temperature and a gas barrier layer of a mono or multicomponent metal oxide glass formed by a sol-gel method and its retardation (Re) value at wavelength of 632.8 nm is in the range of 250-450 nm or 500-700 nm.例文帳に追加

波長４００〜７００ｎｍにおける平均光透過率が７０％以上、ガラス転移点が１００℃以上のプラスチックフィルムと、ゾルゲル法による単一又は多成分系金属酸化物ガラスのガスバリヤ層と、を有し、波長６３２．８ｎｍにおけるレターデーション（Ｒｅ）の値が、２５０〜４５０ｎｍ又は５００〜７００ｎｍであるか、又は波長６３２．８ｎｍにおけるレターデーション（Ｒｅ）の値が、２５０〜４５０ｎｍ又は５００〜７００ｎｍである表示装置用基板を提供する。 - 特許庁

The process of cleaning the semiconductor substrate by ejecting cleaning liquid from a ultrasonic nozzle to the rotated circular semiconductor substrate comprises a small power output cleaning process 102A for lowering the ultrasonic vibration output in the inner peripheral part of the semiconductor substrate, a large power output cleaning process 101A for increasing the ultrasonic vibration output in the outer peripheral part, and a transition region cleaning process 103A between both processes 102A and 101A.例文帳に追加

回転される円形状半導体基板に超音波ノズルから洗浄液を噴射させて当該半導体基板を洗浄する工程を、半導体基板の内周部分においては超音波の発振出力を低くする低出力洗浄工程１０２Ａと、外周部分においては超音波の発振出力を高くする高出力洗浄工程１０１Ａと、これら両工程１０２Ａ，１０１Ａ間における遷移領域洗浄工程１０３Ａとから構成したものである。 - 特許庁

During 5 years since 2005, the medium industrial category in which the number of the employed increased the most was the industry of "social insurance, social welfare, and care services" (such as welfare and care services for the elderly people), followed by "industries unable to classify," "medical and other health services," "postal activities," "manufacture of general-purpose machinery" and "food take out and delivery services .The number of the employed decreased the most in "construction" followed by "employment and worker dispatching services," "agriculture," "wholesale trade," "postal services" and "manufacture of textile mill products ." (Increasing professional and engineering workers) Looking at the long-term transition of the employment composition by occupation, the ratio of "professional and engineering workers" increased from 6 .6% in 1970 to 14 .5% in 2010, and the ratio of "clerical workers" increased from 14 .0% in 1970 to 18 .4% in 2010 (Figure 16) .(Decrease in public capital formation which greatly affected regional employment) By plotting the relationship between the changes in the composition ratio of public capital formation to the gross prefectural product and the changes in the regional increase rate of the employed and the ratio of the number of workers in the construction industry to the number of workers in the region, we can see that the decrease of public capital formation had a more profound effect on the decrease of the number of workers in the regional blocks including Hokkaido, Tohoku and Shikoku, than the 3 major urban regions, i .e .例文帳に追加

産業中分類別に、2005年からの5 年間で最も就業者数が増えたのは老人福祉・介護事業などの「社会保険・社会福祉・介護事業」であり、以下「分類不能の産業」「医療業」「郵便業」「はん用機械器具製造業」「持ち帰り・配達飲食サービス業」と続く 。 - 厚生労働省

* (Note) In immigration-related statistics, mainland China and Taiwan are described as “China” and “China (Taiwan)” respectively. With respect to Hong Kong, persons of Chinese nationality having a SAR (Special Administrative Region) passport (including persons of Chinese nationality having a certificate of identity within the period of validity issued by the former Hong Kong Government) are described as “China (Hong Kong)”, and persons having the right of residence in Hong Kong and having a BNO (British National Overseas) passport (British passport issued only to residents in Hong Kong) (including persons who have a British (Hong Kong) passport issued by the former Hong Kong Government and entered within its period of validity(prior to June 30, 1997), are described as “UK (Hong Kong)”. Further, BNO passports are restricted in respect of renewal,and gradually transition to SAR passports. 例文帳に追加

（注）　出入国関係の統計においては，中国本土を「中国」，台湾を「中国（台湾）」と記載している。また，香港については，中国国籍を有する者で中国香港特別行政区旅券（ＳＡＲ（Special Administrative Region）旅券）を所持する者（有効期間内の旧香港政庁発給の身分証明書を所持する中国籍者を含む。）を「中国（香港）」，香港の居住権を有する者で英国政府の発給した香港英国海外国民旅券（ＢＮＯ（British National Overseas）旅券：香港居住者のみを対象とする英国旅券）を所持する者（有効期間内（1997年６月 30日以前）に旧香港政庁発給の英国（香港）旅券を所持し入国した者を含む。）を「英国（香港）」と記載している。なお，ＢＮＯ旅券は更新発給が制限されており，順次ＳＡＲ旅券に移行している。 - 特許庁