junction isolationとは 意味・読み方・使い方

P-type diffusion regions 44 are formed on the surface of the substrate 21 below the respective circuit elements and serve as junction isolation.例文帳に追加

各回路素子の下部の基板２１表面にＰ型の拡散領域４４を形成し、接合分離の役割を果たす。 - 特許庁

Thus if the channel stop doped region is formed by self-alignment only in the lower part of the isolation region, the isolation characteristics between unit cells can be improved and the junction leakage current can be reduced.例文帳に追加

このように自己整列的に分離領域の下部にのみチャンネルストップ不純物領域を形成すれば単位セル間の分離特性を向上させかつ接合漏れ電流を減らせる。 - 特許庁

A P-type diffusion region 44 is formed on a surface of the substrate 21, which is under each circuit element so that the region 44 will play the role of junction isolation.例文帳に追加

各回路素子の下部の基板２１表面にＰ型の拡散領域４４を形成し、接合分離の役割を果たす。 - 特許庁

To provide a low-cost semiconductor integrated circuit device in which a chip area is reduced by using p-n junction isolation for isolating side faces.例文帳に追加

側面の分離にｐｎ接合分離を用い、チップ面積を縮小化し、低コストの半導体集積回路装置を提供する。 - 特許庁

The solid-state image-sensing device comprises a pn-junction sensor part 111, a device isolation layer for trench isolation for isolating the sensor part into pixels, and a semiconductor region formed protruding from the device isolation layer toward the sensor part and having a conductivity type opposite to that of a charge accumulation region of the sensor part.例文帳に追加

固体撮像装置は、ｐｎ接合型のセンサ部と、センサ部を画素分離するトレンチ分離による素子分離層と、素子分離層からセンサ部側に張出して形成されたセンサ部の電荷蓄積領域とは逆導電型の半導体領域とを有する。 - 特許庁

To prevent a short-circuit and an increase in junction leakage current in a semiconductor device with a structure in which a part of a contact hole is disposed on an element isolation region.例文帳に追加

コンタクトホールの一部が素子分離領域上に配置された構造の半導体装置において、短絡及び接合漏れ電流の増大を抑制する。 - 特許庁

The semiconductor device has an insulating film (oxide film) formed selectively only between STI element isolation and the PN-junction of the source/drain regions.例文帳に追加

その半導体装置では、ＳＴＩ素子分離とソース／ドレイン領域のＰＮ接合部分の間のみに選択的に絶縁膜（酸化膜）を形成している。 - 特許庁

To provide a semiconductor device capable of appropriately avoid the reduction in isolation withstand voltage without accompanying any bad influence such as junction capacitance increase, and a method of manufacturing the same.例文帳に追加

接合容量の増加等の弊害を伴わずに分離耐圧の低下を適切に回避し得る、半導体装置及びその製造方法を得る。 - 特許庁