AU562454B2 - Ballistic heterojunction bipolar transistors - Google Patents

Ballistic heterojunction bipolar transistors

Info

Publication number: AU562454B2
Authority: AU; Australia
Prior art keywords: ballistic; bipolar transistors; heterojunction bipolar; heterojunction; transistors
Prior art date: 1982-09-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Ceased

Application number

AU18791/83A

Other versions

AU1879183A (en

Inventor

David G. Ankri

Lester F. Eastman

Walter H. Ku

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

L'ETAT FRANCAIS

Original Assignee

Gouvernement de la Republique Francaise

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-09-17

Filing date

1983-09-07

Publication date

1987-06-11

1983-09-07 Application filed by Gouvernement de la Republique Francaise filed Critical Gouvernement de la Republique Francaise

1984-03-22 Publication of AU1879183A publication Critical patent/AU1879183A/en

1987-06-11 Application granted granted Critical

1987-06-11 Publication of AU562454B2 publication Critical patent/AU562454B2/en

2003-09-07 Anticipated expiration legal-status Critical

Status Ceased legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/881—Resonant tunnelling transistors

AU18791/83A 1982-09-17 1983-09-07 Ballistic heterojunction bipolar transistors Ceased AU562454B2 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US41929382A	1982-09-17	1982-09-17
US419293		1982-09-17

Publications (2)

Publication Number	Publication Date
AU1879183A AU1879183A (en)	1984-03-22
AU562454B2 true AU562454B2 (en)	1987-06-11

Family

ID=23661636

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU18791/83A Ceased AU562454B2 (en)	1982-09-17	1983-09-07	Ballistic heterojunction bipolar transistors

Country Status (5)

Country	Link
EP (1)	EP0106724B1 (en)
JP (1)	JPS59210669A (en)
AU (1)	AU562454B2 (en)
CA (1)	CA1213378A (en)
DE (1)	DE3380047D1 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59211267A (en) *	1983-05-17	1984-11-30	Toshiba Corp	Hetero junction bipolar transistor
DE3572752D1 (en) *	1984-09-21	1989-10-05	American Telephone & Telegraph	A novel semiconductor device
US4866488A (en) *	1985-03-29	1989-09-12	Texas Instruments Incorporated	Ballistic transport filter and device
JPS6216569A (en) *	1985-07-16	1987-01-24	Matsushita Electric Ind Co Ltd	Hetero-junction transistor and its manufacture
JPS6218762A (en) *	1985-07-18	1987-01-27	Matsushita Electric Ind Co Ltd	Hetero junction transistor and manufacture thereof
JPS6221272A (en) *	1985-07-19	1987-01-29	Matsushita Electric Ind Co Ltd	Heterojunction transistor and manufacture thereof
JPS6249656A (en) *	1985-08-29	1987-03-04	Matsushita Electric Ind Co Ltd	Heterojunction bipolar transistor and its manufacturing method
JPS6249662A (en) *	1985-08-29	1987-03-04	Matsushita Electric Ind Co Ltd	Heterojunction bipolar transistor and its manufacturing method
JPS6247158A (en) *	1985-08-26	1987-02-28	Matsushita Electric Ind Co Ltd	Hetero junction bipolar transistor and manufacture thereof
JPS6249657A (en) *	1985-08-29	1987-03-04	Matsushita Electric Ind Co Ltd	Heterojunction bipolar transistor and its manufacturing method
JPS6249659A (en) *	1985-08-29	1987-03-04	Matsushita Electric Ind Co Ltd	Heterojunction bipolar transistor and manufacture thereof
JPS6249658A (en) *	1985-08-29	1987-03-04	Matsushita Electric Ind Co Ltd	Heterojunction bipolar transistor and its manufacturing method
JPS6249660A (en) *	1985-08-29	1987-03-04	Matsushita Electric Ind Co Ltd	Heterojunction bipolar transistor and manufacture thereof
JPS6249661A (en) *	1985-08-29	1987-03-04	Matsushita Electric Ind Co Ltd	Heterojunction bipolar transistor and its manufacturing method
JPH0611056B2 (en) *	1985-12-03	1994-02-09	富士通株式会社	High-speed semiconductor device
JPS6348863A (en) *	1986-08-19	1988-03-01	Matsushita Electric Ind Co Ltd	Manufacturing method of heterojunction bipolar transistor
EP0257460B1 (en) *	1986-08-12	1996-04-24	Canon Kabushiki Kaisha	Solid-state electron beam generator
JPS6348862A (en) *	1986-08-19	1988-03-01	Matsushita Electric Ind Co Ltd	Manufacturing method of heterojunction bipolar transistor
EP0273363B1 (en) *	1986-12-22	1992-07-08	Nec Corporation	Heterojunction bipolar transistor with ballistic operation
JPS63188969A (en) *	1987-01-30	1988-08-04	Matsushita Electric Ind Co Ltd	Bipolar transistor manufacturing method
JPH0654780B2 (en) *	1987-02-19	1994-07-20	松下電器産業株式会社	Heterojunction bipolar transistor
JPS63263761A (en) *	1987-04-22	1988-10-31	Matsushita Electric Ind Co Ltd	Bipolar transistor manufacturing method
JP2624253B2 (en) *	1987-05-07	1997-06-25	松下電器産業株式会社	Manufacturing method of bipolar transistor
JPH0682678B2 (en) *	1987-05-07	1994-10-19	松下電器産業株式会社	Bipolar transistor manufacturing method
JPH0824124B2 (en) *	1987-07-24	1996-03-06	松下電器産業株式会社	Method for manufacturing bipolar transistor
JPH0824127B2 (en) *	1987-07-24	1996-03-06	松下電器産業株式会社	Method for manufacturing bipolar transistor
JPH0824126B2 (en) *	1987-07-24	1996-03-06	松下電器産業株式会社	Bipolar transistor and manufacturing method thereof
JPH0824125B2 (en) *	1987-07-24	1996-03-06	松下電器産業株式会社	Bipolar transistor and manufacturing method thereof
US4821082A (en) *	1987-10-30	1989-04-11	International Business Machines Corporation	Heterojunction bipolar transistor with substantially aligned energy levels
US5098853A (en) *	1988-11-02	1992-03-24	Hughes Aircraft Company	Self-aligned, planar heterojunction bipolar transistor and method of forming the same
JP3299807B2 (en) *	1993-04-07	2002-07-08	シャープ株式会社	Heterojunction bipolar transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6024592B2 (en) *	1975-01-27	1985-06-13	株式会社日立製作所	Manufacturing method of wide-gap emitter transistor
US4366493A (en) *	1980-06-20	1982-12-28	International Business Machines Corporation	Semiconductor ballistic transport device

1983
- 1983-09-02 EP EP83401740A patent/EP0106724B1/en not_active Expired
- 1983-09-02 DE DE8383401740T patent/DE3380047D1/en not_active Expired
- 1983-09-07 AU AU18791/83A patent/AU562454B2/en not_active Ceased
- 1983-09-13 CA CA000436549A patent/CA1213378A/en not_active Expired
- 1983-09-17 JP JP58172047A patent/JPS59210669A/en active Granted

Also Published As

Publication number	Publication date
DE3380047D1 (en)	1989-07-13
EP0106724A2 (en)	1984-04-25
EP0106724A3 (en)	1986-02-12
AU1879183A (en)	1984-03-22
CA1213378A (en)	1986-10-28
EP0106724B1 (en)	1989-06-07
JPS59210669A (en)	1984-11-29
JPH0586658B2 (en)	1993-12-13

Publication	Publication Date	Title
AU562454B2 (en)	1987-06-11	Ballistic heterojunction bipolar transistors
DE3376713D1 (en)	1988-06-23	Double heterojunction field effect transistors
AU2165183A (en)	1984-06-14	Nephroscopy cannula
EP0297886A3 (en)	1989-12-13	Heterojunction bipolar transistor
AU1970283A (en)	1984-04-05	P.v.p. gel dressings
GB2171250B (en)	1988-07-13	Heterojunction field effect transistors
EP0313749A3 (en)	1990-05-16	Heterojunction bipolar transistor
GB2073486B (en)	1984-12-19	Bipolar transistors
JPS5680161A (en)	1981-07-01	Bipolar transistor
AU554784B2 (en)	1986-09-04	An agricultural implement
AU569049B2 (en)	1988-01-21	Co-polyester-carbonate blends
AU1615983A (en)	1984-01-05	Bipolar membrane
AU554355B2 (en)	1986-08-21	An agricultural implement
AU573375B2 (en)	1988-06-02	Schottky - gate field effect transistors
EP0273363A3 (en)	1988-11-02	Heterojunction bipolar transistor with ballistic operation
EP0278386A3 (en)	1989-05-03	Heterojunction bipolar transistor
AU545211B2 (en)	1985-07-04	Bipolar transistors
AU1792983A (en)	1984-03-22	2,3-dihydrobenzofurans
GB8406696D0 (en)	1984-04-18	Amplifier with bipolar transistors
AU559471B2 (en)	1987-03-12	High cis 1,4-polybutadiene
AU561358B2 (en)	1987-05-07	Temperature stable self-protected thyristor
AU1256283A (en)	1983-09-29	Composter
GB2129214B (en)	1986-04-03	Bipolar transistors
AU551883B2 (en)	1986-05-15	2,5-bis-perfluoroalkyl-3,4-dicarbonylalkoxypyrroles
AU1176983A (en)	1983-09-01	2,3-dihydro-1h-pyrrolizines