JP3514397B2 - Method for producing composite oxide single crystal - Google Patents
Method for producing composite oxide single crystalInfo
- Publication number
- JP3514397B2 JP3514397B2 JP29858294A JP29858294A JP3514397B2 JP 3514397 B2 JP3514397 B2 JP 3514397B2 JP 29858294 A JP29858294 A JP 29858294A JP 29858294 A JP29858294 A JP 29858294A JP 3514397 B2 JP3514397 B2 JP 3514397B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- composite oxide
- oxide single
- raw material
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、融液からの複合酸化物
単結晶の製造方法に関するものであり、特に表面弾性波
素子に使われるニオブ酸リチウムないしはタンタル酸リ
チウム単結晶の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a composite oxide single crystal from a melt, and more particularly to a method for producing a lithium niobate or lithium tantalate single crystal used in a surface acoustic wave device. Is.
【0002】[0002]
【従来の技術】タンタル酸リチウム単結晶、ニオブ酸リ
チウム単結晶といった2種類以上の金属イオンからなる
複合酸化物単結晶は、表面弾性波(以下SAWと略称す
る)素子用基板として有用な単結晶であり、通常はチョ
クラルスキー法、すなわち、ルツボ内に原料を充填し、
加熱溶融し、種結晶を原料表面に接触させた後、種結晶
を回転しながら引き上げる方法により製造されている。
この場合の原料組成として、例えばタンタル酸リチウム
単結晶について連続して結晶を引き上げ成長させる時に
は、特公平3−24438号公報の第1図に示されてい
るように、結晶工学的に融液組成と結晶組成とが一致す
ると定義されるコングルエント組成を用いることが、好
ましいとされている。しかし、特公平3−24438号
公報にも記載されているようにコングルエント組成を正
確に決定することは困難なことであり、この結果とし
て、製造した単結晶基板を用いてSAWデバイス化した
時の製造歩留りに大きなばらつきがあった。2. Description of the Related Art A composite oxide single crystal composed of two or more kinds of metal ions such as a lithium tantalate single crystal and a lithium niobate single crystal is a single crystal useful as a substrate for a surface acoustic wave (hereinafter abbreviated as SAW) device. Is usually the Czochralski method, that is, filling the raw material in the crucible,
It is manufactured by a method of heating and melting, bringing the seed crystal into contact with the surface of the raw material, and then pulling the seed crystal while rotating.
As a raw material composition in this case, for example, when a crystal is continuously pulled and grown for a lithium tantalate single crystal, as shown in FIG. 1 of Japanese Patent Publication No. 3-24438, the melt composition is crystallographically engineered. It is preferred to use a congruent composition which is defined as a match between the crystal composition and the crystal composition. However, as described in Japanese Patent Publication No. 3-24438, it is difficult to accurately determine the congruent composition. As a result, when the manufactured single crystal substrate is used as a SAW device, There was a large variation in manufacturing yield.
【0003】通常、上記複合酸化物単結晶の製造は、コ
ングルエント組成に近い原料を貴金属ルツボに充填し、
チョクラルスキー法により結晶成長を行った後、次回の
引き上げ成長のためにルツボ残留原料に、前回引き上げ
成長した結晶の重量分の焼成粉末または成長結晶塊を充
填して、次バッチの結晶の引き上げ成長を行い、以上を
連続して行う。そのため、原料組成が真のコングルエン
ト組成からずれていると連続引き上げ回数の増加に伴っ
て結晶組成は徐々に変化していき、結晶バッチ内、バッ
チ間のSAW特性変動が大きくなり、デバイス歩留りの
低下につながるとされる。そこで特公平3−24438
号公報では結晶組成と対応する成長結晶のキュリー点の
測定値を解析し、コングルエント組成を厳密に求め、さ
らに、単結晶製造工程での変動実績を加味して最終的な
原料組成を決定している。Usually, in the production of the above-mentioned composite oxide single crystal, a noble metal crucible is filled with a raw material having a congruent composition,
After performing crystal growth by the Czochralski method, for the next pulling growth, the crucible residual raw material is filled with the calcined powder or the growing crystal mass corresponding to the weight of the previously pulled and grown crystal, and the next batch of crystal is pulled up. Grow and continue to do the above. Therefore, if the raw material composition deviates from the true congruent composition, the crystal composition gradually changes as the number of continuous pulling increases, and SAW characteristic fluctuations within and between crystal batches increase, resulting in a decrease in device yield. Is said to lead to. Therefore, Japanese Patent Publication No. 3-24438
In the publication, the measured value of the Curie point of the grown crystal corresponding to the crystal composition is analyzed, the congruent composition is rigorously determined, and the final raw material composition is determined in consideration of the fluctuation record in the single crystal manufacturing process. There is.
【0004】しかし、あらかじめ原料組成を最適値とし
ておいても例えば、ガドリニウム・ガリウム・ガ−ネッ
ト単結晶製造工程ではGa2O3 が原料焼成工程及びルツボ
に原料を充填した加熱溶解から結晶成長中までの工程に
飛散し、タンタル酸リチウム、ニオブ酸リチウム単結晶
製造工程ではLi2Oが同様な工程中に飛散する。さらにこ
の飛散量は厳密には常に一定ではなく、原料焼成工程で
は例えば焼成温度、焼成時間、原料の粒度、原料の混合
の程度で変化し、原料をルツボに充填した後の工程では
例えばルツボの大きさ、結晶の太さ、原料の充填量、雰
囲気ガスの流量、昇温から種結晶接触までの時間で変化
すると考えられ、これらの条件を常に一定とするような
製造方法を確立することは工業的には非常に困難なこと
である。However, even if the raw material composition is set to the optimum value in advance, for example, in the gadolinium gallium garnet single crystal manufacturing process, Ga 2 O 3 is grown during the raw material firing process and the melting of the raw material in the crucible during the crystal growth. Up to the above process, and Li 2 O scatters during the same process in the lithium tantalate and lithium niobate single crystal manufacturing processes. Further, strictly speaking, this scattering amount is not always constant, and in the raw material firing step, for example, it varies depending on the firing temperature, the firing time, the particle size of the raw material, the degree of mixing of the raw materials, and the crucible is filled with the raw material in the crucible. It is considered that the size, the thickness of the crystal, the filling amount of the raw material, the flow rate of the atmosphere gas, and the time from the temperature rise to the contact with the seed crystal change, and it is not possible to establish a manufacturing method that keeps these conditions constant. This is very difficult industrially.
【0005】また、最近のタンタル酸リチウム、ニオブ
酸リチウム単結晶の用途は自動車電話、携帯電話といっ
た使用周波数帯が800MHzを越える分野が増えており、
この用途で使うには今まで以上に音速の範囲を限定しな
ければデバイスの歩留りが悪くなると言われている。し
たがって、音速と対応する結晶組成を厳密に制御した基
板結晶の需要が高まっている。このためには従来なされ
ている原料組成の管理だけでは対応できず、結晶を製造
しつつ、その結晶組成、または結晶組成と密接に関連す
る物性値を迅速に測定し、次バッチの融液組成にフィー
ドバックする具体的な手法が求められている。Further, the recent applications of lithium tantalate and lithium niobate single crystals are increasing in fields such as automobile phones and mobile phones whose operating frequency band exceeds 800 MHz.
It is said that the device yield will deteriorate unless the range of the sound velocity is further limited for use in this application. Therefore, there is an increasing demand for a substrate crystal in which the crystal composition corresponding to the speed of sound is strictly controlled. For this purpose, it is not possible to deal with the conventional management of the raw material composition alone, while the crystal is being manufactured, its crystal composition, or the physical property values closely related to the crystal composition are rapidly measured, and the melt composition of the next batch is measured. There is a demand for a specific method of feeding back to.
【0006】[0006]
【発明が解決しようとする課題】本発明は、融液からコ
ングルエント組成を持つ複合酸化物単結晶を、チョクラ
ルスキー法により連続して成長させる複合酸化物単結晶
製造方法において、特に単結晶がニオブ酸リチウム、タ
ンタル酸リチウムであるものについて、結晶バッチ間の
組成変動を極力小さく制御して、所定の範囲内の結晶組
成を持つ複合酸化物単結晶を再現性よく製造する方法を
提供するものである。DISCLOSURE OF THE INVENTION The present invention is a method for producing a composite oxide single crystal in which a composite oxide single crystal having a congruent composition is continuously grown from a melt by the Czochralski method, and particularly, the single crystal is Lithium niobate, Lithium tantalate, which provides a method for reproducibly producing a composite oxide single crystal having a crystal composition within a predetermined range by controlling the composition variation between crystal batches to a minimum. Is.
【0007】[0007]
【課題を解決するための手段】すなわち本発明は、融液
からコングルエント組成を持つ複合酸化物単結晶をチョ
クラルスキー法により連続して成長させるに際し、該複
合酸化物単結晶の原料を加熱溶解して単結晶を引き上
げ、この格子定数を測定して目標とする格子定数との差
を求め、この差に基づいて、添加すべき複合酸化物単結
晶を構成する金属成分の酸化物あるいは炭酸塩量を求め
て複合酸化物単結晶を成長させる原料中に添加した後
に、次のバッチの複合酸化物単結晶を成長させることを
特徴とする複合酸化物単結晶の製造方法を要旨としたも
のである。例えば、求めた格子定数の差に、次バッチに
使用する結晶原料の量及び単結晶引上げ条件に依存する
係数を乗じてコングルエント組成からのずれを調整する
原料成分量を求め、これを複合酸化物単結晶を成長させ
る原料に添加した後に、次のバッチの複合酸化物単結晶
を成長させてもよい。次のバッチの複合酸化物単結晶の
原料は、焼成原料と、前バッチの単結晶引き上げ後の残
りの融液よりなる結晶原料及び格子定数の差に基づいて
求めた複合酸化物単結晶を構成する金属成分の酸化物あ
るいは炭酸塩を添加したものとされる。複合酸化物単結
晶がタンタル酸リチウム単結晶の場合、五酸化タンタル
や炭酸リチウム が添加され、複合酸化物単結晶がニオブ
酸リチウム単結晶の場合には、五酸化ニオブや炭酸リチ
ウムが添加される。また、焼成原料の初期組成は、コン
グルエント組成よりもリチウムが多い組成とするのが好
ましい。以下にこれをさらに詳述する。That is, the present invention SUMMARY OF THE INVENTION may, upon growing the composite oxide single crystal having a congruent composition from the melt continuously by the Czochralski method, said plurality
The raw material of the compound oxide single crystal is melted by heating to pull up the single crystal.
Difference between the measured lattice constant and the target lattice constant.
The calculated, based on the difference, determine the oxides or carbonates of the metal components constituting the should be added a composite oxide single crystal
The present invention is directed to a method for producing a composite oxide single crystal, which comprises adding the compound oxide into a raw material for growing the composite oxide single crystal and then growing the next batch of the composite oxide single crystal. For example, in the next batch to the difference of the obtained lattice constant
Depends on the amount of crystal raw material used and single crystal pulling conditions
Adjust the deviation from the congruent composition by multiplying by a coefficient
Obtain the amount of raw material components and use this to grow a complex oxide single crystal.
The next batch of complex oxide single crystal after being added to the raw material
May grow. Next batch of complex oxide single crystals
The raw material is the firing raw material and the residue after pulling the single crystal of the previous batch.
Based on the difference in the lattice constant and the crystal raw material composed of
The oxide of the metal component that constitutes the obtained composite oxide single crystal was obtained.
Rui is considered to have carbonate added. Complex oxide single bond
If the crystal is a lithium tantalate single crystal, tantalum pentoxide
And lithium carbonate are added, and the composite oxide single crystal is niobium.
In the case of lithium oxide single crystal, niobium pentoxide or lithium carbonate
Um is added. Also, the initial composition of the firing material is
It is preferable to use a composition with more lithium than the gradient composition.
Good This will be described in more detail below.
【0008】本発明による単結晶の製造はガドリニウム
・ガリウム・ガーネット単結晶、タンタル酸リチウム単
結晶、ニオブ酸リチウム単結晶といった2種類以上の金
属イオンからなる複合酸化物結晶をチョクラルスキー法
すなわち、ルツボ内に焼成原料を充填して加熱溶解し、
種結晶をこの原料表面に接触させた後、種結晶を回転し
ながら引き上げる方法により行われる。上記において結
晶組成を厳密に制御するには、結晶組成を正確に把握す
る必要があるが、複合酸化物結晶を構成する金属元素の
量を精度よく分析することは困難である。また、結晶組
成を制御するための物性値として、結晶組成と対応し、
かつ、デバイスの歩留りとも直接関係する音速を測定す
ることは、基板にパターンを形成した後となるため測定
時間がかかり、連続して引き上げを行う工程管理の方法
としては実用性が低い。キュリー温度の測定も長時間を
要する。The production of the single crystal according to the present invention is carried out by the Czochralski method, that is, by using a Czochralski method to form a complex oxide crystal composed of two or more kinds of metal ions such as gadolinium / gallium / garnet single crystal, lithium tantalate single crystal and lithium niobate single crystal. Fill the crucible with firing raw material, heat and melt,
After the seed crystal is brought into contact with the surface of the raw material, the seed crystal is pulled while rotating. In order to strictly control the crystal composition in the above, it is necessary to accurately grasp the crystal composition, but it is difficult to accurately analyze the amount of the metal element forming the composite oxide crystal. Further, as a physical property value for controlling the crystal composition, corresponding to the crystal composition,
Moreover, measuring the sound velocity, which is directly related to the device yield, takes a long measuring time after the pattern is formed on the substrate, and is not practical as a process control method of continuously pulling up. It takes a long time to measure the Curie temperature.
【0009】そこで結晶組成と対応し、かつ、デバイス
特性と対応する音速とも関係する物性値として格子定数
を取り上げた。この格子定数と音速との関係は特開昭6
1−128619号公報に示されているが、それによる
と、望ましい格子定数の範囲としてはタンタル酸リチウ
ム単結晶のa軸方向では温度25℃で5.1534〜5.1540 nm
( × 10 -1 )とされるが、更に周波数が800MHzを越える周
波数帯で使うには5.15365 〜5.15395 nm( × 10 -1 ) が好
ましい。このような非常に限定された狭い範囲の格子定
数を持つ単結晶を製造するにはコングルエント組成の原
料を用いるだけでは製造できない。そこで、本発明者ら
は1バッチ毎に育成された単結晶から試料を切り出して
その格子定数を測定し、格子定数の上記目標値からのず
れを求め、予め求めてあるずれに対応する結晶を構成し
ている原料成分を次バッチの原料に添加すれば、コング
ルエント組成に近い組成の原料組成を得ることができる
ことを見いだして、本発明を完成させた。Therefore, the lattice constant is taken up as a physical property value which corresponds to the crystal composition and also to the sound velocity corresponding to the device characteristics. The relationship between the lattice constant and the speed of sound is disclosed in Japanese Patent Laid-Open No.
As disclosed in Japanese Patent Publication No. 1-128619, it is found that the desirable lattice constant range is 5.1534 to 5.1540 nm at a temperature of 25 ° C. in the a-axis direction of a lithium tantalate single crystal.
( × 10 −1 ) , but 5.15365 to 5.15395 nm ( × 10 −1 ) is preferable for further use in the frequency band in which the frequency exceeds 800 MHz. A single crystal having such a very limited and narrow lattice constant cannot be produced only by using a raw material having a congruent composition. Therefore, the present inventors cut out a sample from the single crystal grown for each batch, measure the lattice constant of the sample, find the deviation of the lattice constant from the target value, and obtain a crystal corresponding to the deviation found in advance. The present invention was completed by finding that a raw material composition having a composition close to the congruent composition can be obtained by adding the constituent raw material components to the raw material of the next batch.
【0010】なおコングルエント組成に近い組成として
は、タンタル酸リチウム、ニオブ酸リチウムの場合、飛
散しやすいLi2CO3を添加するよりも、組成の制御がしや
すいTa2O5 や Nb2O5を添加する方が好ましいことから、
コングルエント組成よりもLiが多い組成を初期組成とす
るほうが良い。この焼成原料の組成はLi2Oの飛散量が単
結晶引き上げ方法に依存していることから製造方法で異
なるが、タンタル酸リチウムの場合はLi/Ta=0.942〜
0.944 (モル比)、好ましくは、Li/Ta=0.943 (モル
比)とすることがよい。As a composition close to the congruent composition, in the case of lithium tantalate or lithium niobate, the composition of Ta 2 O 5 or Nb 2 O 5 is easier to control than the addition of Li 2 CO 3 which tends to scatter. Since it is preferable to add
It is better to set the composition with more Li than the congruent composition as the initial composition. The composition of this firing material differs depending on the manufacturing method because the amount of Li 2 O scattered depends on the single crystal pulling method, but in the case of lithium tantalate, Li / Ta = 0.942 ~
It is 0.944 (molar ratio), preferably Li / Ta = 0.943 (molar ratio).
【0011】以後、タンタル酸リチウムについて説明す
る。上記の焼成原料と、前バッチの単結晶引き上げ後の
残りの融液よりなる結晶原料、及び前バッチの単結晶の
格子定数値を参考にして求められた量のTa2O5 よりなる
融液を用いて、チョクラルスキー法により単結晶を引き
上げることによって、目標とする範囲の格子定数を持っ
たコングルエント組成の単結晶を得ることができるとす
るものである。Hereinafter, lithium tantalate will be described. The above-mentioned firing raw material, a crystal raw material consisting of the remaining melt after pulling the single crystal of the previous batch, and a melt consisting of Ta 2 O 5 in an amount determined with reference to the lattice constant value of the single crystal of the previous batch According to the Czochralski method, a single crystal having a congruent composition having a lattice constant in a target range can be obtained.
【0012】焼成原料はLi2CO3とTa2O5 の粉末をモル比
でLi/Ta=0.943 となるように秤量し、これを混合して
900 ℃以上に焼成したものを用いればよい。As the firing raw material, powders of Li 2 CO 3 and Ta 2 O 5 were weighed so that the molar ratio was Li / Ta = 0.943, and these were mixed.
What is baked at 900 ° C or higher may be used.
【0013】また、添加するTa2O5 については種々検討
した結果、式(1) により添加量を求めることができる。
添加量Ta2O5 量[g]
=−格子定数[nm( × 10 -1 ) ] − 5.15385) ×結晶原料[g] ×F……式(1)
ここでFはルツボの大きさ、結晶の外径、原料の充填
度、雰囲気ガスの流量、昇温から種結晶接触までの時間
に依存する係数であり、実験的に求められる数字であ
る。二オブ酸リチウムの添加量もタンタル酸リチウムと
同様の手法により求めることができる。As a result of various studies on Ta 2 O 5 to be added, the addition amount can be obtained by the formula (1). Addition amount Ta 2 O 5 amount [g] = -Lattice constant [ nm ( × 10 -1 ) ]-5.15385) × Crystal raw material [g] × F …… Equation (1) where F is the crucible size and crystal Is a coefficient that depends on the outer diameter, the filling degree of the raw material, the flow rate of the atmospheric gas, and the time from the temperature rise to the seed crystal contact, and is a number that is experimentally obtained. The amount of lithium niobate added can also be determined by the same method as for lithium tantalate.
【0014】[0014]
【作用】以上により、コングルエント組成のずれの制御
は、音速やキュリ−点を測定してなる制御よりも容易に
行うことができる。すなわち、育成された単結晶から切
り出した試料の格子定数を測定して、式(1)によりコ
ングルエント組成からのずれを調整する原料成分量を求
め、次バッチの原料に添加することにより、結晶組成と
対応している格子定数を一定範囲内に制御することがで
きる。As described above, the deviation of the congruent composition can be controlled more easily than the control of measuring the speed of sound and the Curie point. That is, the lattice constant of a sample cut out from a grown single crystal is measured, the amount of raw material component that adjusts the deviation from the congruent composition is calculated by the formula (1), and the amount of the raw material component is added to the raw material of the next batch. The lattice constant corresponding to can be controlled within a certain range.
【0015】[0015]
【実施例】以下実施例、比較例について述べる。
実施例
直径180mm φ、高さ180mm のイリジウム製ルツボに外径
185mm φ、内径130mm φ、厚さ2mm のド−ナツ板上のイ
リジウム製リフレクターを配置し、更にこの上に直径15
5mmφ、高さ180mm の円筒状のイリジウム製アフターヒ
ータを配置した。次いで、バッチ1としてこのルツボ内
にLi2CO3とTa2O5 の粉末を組成比がLi/Ta= 0.943(モ
ル比)となるように混合焼成した焼成原料6500gと、前
バッチの結晶原料8500gの合計15000gを入れ、加熱溶
融後チョクラルスキー法で4インチ径のタンタル酸リチ
ウム単結晶 10500gを引き上げた。この結晶のテイル部
から内周刃切断機により厚さ1mmのウェーハを切り出し
25℃におけるa軸方向の格子定数を測定したところ、5.
15380 nm( × 10 -1 )であった。EXAMPLES Examples and comparative examples will be described below. Example: An iridium crucible with a diameter of 180 mm and a height of 180 mm has an outer diameter.
Place an iridium reflector on a donut plate with a diameter of 185 mm φ, an inner diameter of 130 mm φ, and a thickness of 2 mm.
A cylindrical after heater made of iridium with a diameter of 5 mm and a height of 180 mm was placed. Next, as batch 1, 6500 g of a firing raw material in which powders of Li 2 CO 3 and Ta 2 O 5 were mixed and fired in the crucible so that the composition ratio was Li / Ta = 0.943 (molar ratio), and the crystal raw material of the previous batch A total of 8500 g of 15000 g was charged, and after heating and melting, 10500 g of a 4-inch diameter lithium tantalate single crystal was pulled by the Czochralski method. A wafer with a thickness of 1 mm is cut out from the tail part of this crystal with an inner peripheral cutting machine.
The lattice constant in the a-axis direction was measured at 25 ° C.
It was 15380 nm ( × 10 -1 ) .
【0016】次にバッチ2として、バッチ1と同じ組成
の焼成原料6300g、バッチ1の残留融液よりなる結晶原
料2200g、及び式(1) におけるFを実験によって求めて
40とし、バッチ1で得られた単結晶の格子定数の値と
共に式(1)を計算して得られた Ta2O5 4.4gをルツボに
仕込み、チョクラルスキー法によりタンタル酸リチウム
単結晶8450gを引き上げた。この単結晶の格子定数は5.
15378nm( × 10 -1 )であった。以下同様にして表1に示す
ようにバッチ10までおこなった。その結果を表1に示
す。Next, as batch 2, 6300 g of a burning raw material having the same composition as batch 1, 2200 g of a crystalline raw material composed of the residual melt of batch 1, and F in the formula (1) were experimentally determined to be 40, which was obtained in batch 1. 4.4 g of Ta 2 O 5 obtained by calculating the formula (1) together with the value of the lattice constant of the obtained single crystal was charged into a crucible, and 8450 g of lithium tantalate single crystal was pulled by the Czochralski method. The lattice constant of this single crystal is 5.
It was 15378 nm ( × 10 -1 ) . In the same manner, batch 10 was performed as shown in Table 1. The results are shown in Table 1.
【0017】[0017]
【表1】 [Table 1]
【0018】表1に示すように、得られたタンタル酸リ
チウム単結晶の格子定数は、5.15374 〜 5.15383 nm( ×
10 -1 ) の非常に狭い範囲のものを得ることができた。As shown in Table 1, the obtained lithium tantalate single crystal has a lattice constant of 5.15374 to 5.15383 nm ( ×
We were able to obtain a very narrow range of 10 -1 ) .
【0019】比較例
式(1) に基づく追加Ta2O5 を添加しなかった点以外は実
施例と同様に5バッチ、タンタル酸リチウム単結晶を製
造した。その結果を表2に示す。Comparative Example Five batches of lithium tantalate single crystal were prepared in the same manner as in Example except that additional Ta 2 O 5 based on the formula (1) was not added. The results are shown in Table 2.
【0020】[0020]
【表2】 [Table 2]
【0021】表2の結果、組成比がLi/Ta=0.943 (モ
ル比)の焼成原料と結晶原料を使いながら引き上げを続
けた結果、得られたタンタル酸リチウム単結晶の格子定
数はバッチ毎に小さくなり、4バッチ目では目標の範囲
である5.15365〜5.15395 nm( × 10 -1 ) の範囲から外れて
しまった。As a result of Table 2, as a result of continuing pulling while using the firing raw material and the crystal raw material having a composition ratio of Li / Ta = 0.943 (molar ratio), the lattice constant of the obtained lithium tantalate single crystal was batch by batch. It became smaller, and in the fourth batch, it fell outside the target range of 5.15365 to 5.15395 nm ( × 10 -1 ) .
【0022】[0022]
【発明の効果】本発明の方法によると融液組成の制御が
厳密に行われ、このようにして製造された単結晶の格子
定数の範囲は、例えばタンタル酸リチウム単結晶では
5.15365〜5.15395 nm( × 10 -1 ) という極めて狭い範囲と
することができ、使用周波数が 800MHzを越える用途に
特に適したSAWデバイス基板結晶の製造が可能とな
る。According to the method of the present invention, the melt composition is strictly controlled, and the range of the lattice constant of the single crystal thus produced is, for example, in the case of lithium tantalate single crystal.
It can be set to an extremely narrow range of 5.15365 to 5.15395 nm ( × 10 -1 ) , and it becomes possible to manufacture a SAW device substrate crystal particularly suitable for applications where the operating frequency exceeds 800 MHz.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 流王 俊彦 群馬県安中市磯部2丁目13番1号 信越 化学工業株式会社 精密機能材料研究所 内 (56)参考文献 特開 昭54−8199(JP,A) 特開 昭61−128619(JP,A) 特開 平1−122996(JP,A) 特開 平6−48896(JP,A) 特公 平3−24438(JP,B2) (58)調査した分野(Int.Cl.7,DB名) C30B 1/00 - 35/00 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshihiko Nagao 2-13-1, Isobe, Annaka-shi, Gunma Shin-Etsu Chemical Co., Ltd. Precision Materials Research Laboratory (56) Reference JP-A-54-8199 ( JP, A) JP 61-128619 (JP, A) JP 1-122996 (JP, A) JP 6-48896 (JP, A) JP 3-24438 (JP, B2) (58) ) Fields investigated (Int.Cl. 7 , DB name) C30B 1/00-35/00
Claims (6)
酸化物単結晶をチョクラルスキー法により連続して成長
させるに際し、該複合酸化物単結晶の原料を加熱溶解し
て単結晶を引き上げ、この格子定数を測定して目標とす
る格子定数との差を求め、この差に基づいて、添加すべ
き複合酸化物単結晶を構成する金属成分の酸化物あるい
は炭酸塩量を求めて複合酸化物単結晶を成長させる原料
中に添加した後に、次のバッチの複合酸化物単結晶を成
長させることを特徴とする複合酸化物単結晶の製造方
法。1. When a composite oxide single crystal having a congruent composition is continuously grown from a melt by the Czochralski method, a raw material of the composite oxide single crystal is melted by heating.
To pull up the single crystal and measure this lattice constant to set the target.
The difference between the lattice constant and the lattice constant is calculated.
Seeking oxides or carbonates of the metal components constituting the composite oxide single crystal can raw material for growing a composite oxide single crystal
A method for producing a composite oxide single crystal, which comprises growing the next batch of the composite oxide single crystal after being added therein.
酸化物単結晶をチョクラルスキー法により連続して成長
させるに際し、該複合酸化物単結晶の原料を加熱溶解し
て単結晶を引き上げ、この格子定数を測定して目標とす
る格子定数との差を求め、この値に次バッチに使用する
結晶原料の量及び単結晶引上げ条件に依存する係数を乗
じてコングルエント組成からのずれを調整する原料成分
量を求め、これを複合酸化物単結晶を成長させる原料に
添加した後に、次のバッチの複合酸化物単結晶を成長さ
せることを特徴とする複合酸化物単結晶の製造方法。2. When the composite oxide single crystal having a congruent composition is continuously grown from the melt by the Czochralski method , the raw material of the composite oxide single crystal is heated and melted.
To pull up the single crystal and measure this lattice constant to set the target.
Calculate the difference from the lattice constant and use this value for the next batch
Multiply a coefficient that depends on the amount of crystal raw material and the single crystal pulling conditions
Raw material components that adjust the deviation from the congruent composition
A method for producing a composite oxide single crystal, which comprises: determining an amount, adding this to a raw material for growing the composite oxide single crystal, and then growing the next batch of the composite oxide single crystal.
と、前バッチの単結晶引き上げ後の残りの融液よりなる
結晶原料及び格子定数の差に基づいて求めた複合酸化物
単結晶を構成する金属成分の酸化物あるいは炭酸塩を添
加してなる請求項1又は2に記載の複合酸化物単結晶の
製造方法。3. A raw material for a composite oxide single crystal is a firing raw material.
And the remaining melt after pulling the single crystal of the previous batch
Complex oxides obtained based on the difference in crystal raw materials and lattice constants
Add oxides or carbonates of the metal components that make up the single crystal.
The method for producing a composite oxide single crystal according to claim 1 or 2 , further comprising:
単結晶であり、添加する成分が五酸化タンタル、炭酸リ
チウムである請求項1乃至3のいずれかに記載の複合酸
化物単結晶の製造方法。4. The method for producing a composite oxide single crystal according to claim 1, wherein the composite oxide single crystal is a lithium tantalate single crystal, and the added component is tantalum pentoxide or lithium carbonate. .
結晶であり、添加する成分が五酸化ニオブ、炭酸リチウ
ムである請求項1乃至3のいずれかに記載の複合酸化物
単結晶の製造方法。5. The method for producing a composite oxide single crystal according to claim 1, wherein the composite oxide single crystal is a lithium niobate single crystal, and the added component is niobium pentoxide or lithium carbonate. .
リチウムが多い組成を初期組成とする請求項3乃至5の
いずれかに記載の複合酸化物単結晶の製造方法。6. The firing raw material is more preferable than the congruent composition.
6. A composition containing a large amount of lithium as an initial composition.
The method for producing a composite oxide single crystal according to any one of claims .
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29858294A JP3514397B2 (en) | 1994-12-01 | 1994-12-01 | Method for producing composite oxide single crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29858294A JP3514397B2 (en) | 1994-12-01 | 1994-12-01 | Method for producing composite oxide single crystal |
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| Publication Number | Publication Date |
|---|---|
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| JP3514397B2 true JP3514397B2 (en) | 2004-03-31 |
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