JPS5839363B2 - Temperature/humidity detection device - Google Patents
Temperature/humidity detection deviceInfo
- Publication number
- JPS5839363B2 JPS5839363B2 JP54072548A JP7254879A JPS5839363B2 JP S5839363 B2 JPS5839363 B2 JP S5839363B2 JP 54072548 A JP54072548 A JP 54072548A JP 7254879 A JP7254879 A JP 7254879A JP S5839363 B2 JPS5839363 B2 JP S5839363B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- humidity
- humidity detection
- detection device
- sensing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 title claims description 11
- 229910052573 porcelain Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- -1 P b O Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 229910019704 Nb2O Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000026041 response to humidity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】 この発明は温度・湿度検知装置に関するものである。[Detailed description of the invention] The present invention relates to a temperature/humidity sensing device.
従来、湿度測定装置や湿度調節装置のセンサとして、Ｆ
ｅ２Ｏ８，Ａｌ２Ｏ３など吸水性に優れた金属酸化物を
主成分とし湿度に感応して変化するその抵抗値から湿度
が検出される感湿抵抗体が一般に用いられていた。Conventionally, F has been used as a sensor for humidity measuring devices and humidity adjusting devices.
Moisture-sensitive resistors, which are mainly composed of metal oxides with excellent water absorption properties such as e2O8 and Al2O3, and whose resistance value changes in response to humidity to detect humidity have been commonly used.
しかしながら、たとえば空調システムにおいては湿度制
御と同時に温度制御が行なわれるなど、一般には湿度の
みを単独に検知する場合よりも湿度と温度を併せて検知
することを要請される場合の方がむしろ多く、この要請
に応えるためには、たとえば湿度検知用として前記感湿
抵抗体を、温度検知用としてサーミスタをそれぞれ別個
に用い、湿度検知回路と温度検知回路とをおのおの独立
させて２系統の回路構成を採らなければならなかった。However, in general, there are more cases in which it is required to detect humidity and temperature together than to detect humidity alone, for example in air conditioning systems where temperature control is performed at the same time as humidity control. In order to meet this demand, for example, the humidity sensing resistor is used separately for detecting humidity, and the thermistor is used for temperature sensing. I had to take it.
そのため回路構成が複雑となり装置の製造コストも増大
するという欠点を有していた。This has resulted in a disadvantage that the circuit configuration becomes complicated and the manufacturing cost of the device also increases.
したがって、この発明の目的は、簡単かつ安価な回路構
成で温度および湿度の両方を検知することができる温度
・湿度検知装置を提供することである。Therefore, an object of the present invention is to provide a temperature/humidity detection device that can detect both temperature and humidity with a simple and inexpensive circuit configuration.
以下、この発明の実施例を図面に基づいて説明する。Embodiments of the present invention will be described below based on the drawings.
最初に、この温度・湿度検知装置に用いられる温度・湿
度検知素子の一例について第１図により詳しく説明する
。First, an example of a temperature/humidity sensing element used in this temperature/humidity sensing device will be explained in detail with reference to FIG. 1.
まず出発原料として、Ｐ ｂ Ｏ、ＭｇＯ、Ｎｂ２Ｏ，
を湿式混合した後、乾燥して乾燥粉末とする。First, as starting materials, P b O, MgO, Nb2O,
are wet mixed and then dried to form a dry powder.
つぎに、この粉末原料を４Ｘ４Ｘ０．２５ｍに成形（成
形圧７５０Ｋｇ／ｃｒりし、焼結体１としてＰ ｂ （
Ｍｇ １ ／ｓＮ ｂ２Ａ） Ｏｓの酸化物磁器を生成
する。Next, this powder raw material was molded into a size of 4X4X0.25m (molding pressure 750Kg/cr), and a sintered body 1 was formed as P b (
Mg 1 /sN b2A) Os oxide porcelain is produced.
さらに前記焼結体１にＲｕｂ２系電極ペーストを塗布し
て８００℃で焼き付は電極２を形成して温度・湿度検知
素子を構成する。Further, a Rub2-based electrode paste is applied to the sintered body 1 and baked at 800° C. to form an electrode 2 to constitute a temperature/humidity sensing element.
前記電極材料としては、Ｒｕ ０２系以外にＡｇ。As the electrode material, Ag is used in addition to Ru02 type.
Ｎｉ、Ｚｎ５Ｃｒ、Ｐｄ、ＡｕｙＰｔｍＳｎ−Ｃｕ、Ａ
Ｉ、Ｉｎを電極ペースト焼付法、溶射法、蒸着法などで
塗布しても同様の効果かえられる。Ni, Zn5Cr, Pd, AuyPtmSn-Cu, A
The same effect can be obtained by applying I or In by an electrode paste baking method, thermal spraying method, vapor deposition method, or the like.
このような方法で酸化ニッケル、酸化亜鉛、酸化インジ
ウムを主成分とした金属酸化物および半導体などからな
る電極についても形成することができる。Electrodes made of metal oxides and semiconductors whose main components are nickel oxide, zinc oxide, and indium oxide can also be formed by such a method.
前記構成を有する温度・湿度検知素子の特性について、
実験結果に基づき以下に説明する。Regarding the characteristics of the temperature/humidity sensing element having the above configuration,
This will be explained below based on the experimental results.
第２図に示すグラフは、温度２０℃において両電極２，
２間に１０Ｈｚ−ＩＶの低周波電源を印加した場合の、
前記温度・湿度検知素子の相対湿度変化に伴なう電気イ
ンピーダンスの変化を示すもので、湿度が上昇するにつ
れて電気インピーダンスが減少していることがわかる。The graph shown in FIG. 2 shows that both electrodes 2 and 2 at a temperature of 20°C
When a 10Hz-IV low frequency power source is applied between the two,
This figure shows the change in electrical impedance of the temperature/humidity sensing element as the relative humidity changes, and it can be seen that the electrical impedance decreases as the humidity increases.
また、同一印加電源の条件のもとに温度８０℃において
行なった前記特性の実験では、温度の相違による影響は
ほとんど受けないことが判明し、この結果、この温度・
湿度検知素子は、低周波電源を印加した条件のもとでは
、電気インピーダンスの変化は湿度にのみ依存すること
が判明した。Furthermore, in an experiment on the above characteristics conducted at a temperature of 80°C under the same applied power supply conditions, it was found that there was almost no effect due to temperature differences;
It was found that the change in electrical impedance of the humidity sensing element depends only on humidity under conditions where a low frequency power source is applied.
第３図に示すグラフは、湿度５０％ＲＨ（１〜９５℃）
において両電極２，２間に１０００ＫＨｚ−ｉｖの高周
波電源を印加した場合の、温度変化に伴なう温度・湿度
検知素子の電気インピーダンスの変化を示すもので、温
度変化に対応してその電気インピーダンスが変化してい
ることがわかる。The graph shown in Figure 3 shows the humidity at 50% RH (1 to 95°C).
This shows the change in electrical impedance of the temperature/humidity sensing element due to temperature change when a 1000 KHz-iv high frequency power source is applied between both electrodes 2 and 2. It can be seen that the is changing.
また、同一印加電源の条件のもとに相対湿度を１０％、
９９％とした場合にも、前言ｄ特性にほとんど変化はな
いことが判明した。Also, under the same applied power supply conditions, the relative humidity was 10%,
It has been found that even when the ratio is set to 99%, there is almost no change in the aforementioned d characteristic.
第４図に示すグラフは、湿度をパラメータとした場合の
温度２０℃における周波数−電気インピーダンス特性で
あり、Ａは湿度２０％ＲＨ，Ｂは湿度４０φＲＨ。The graph shown in FIG. 4 shows frequency-electrical impedance characteristics at a temperature of 20° C. when humidity is used as a parameter, where A is a humidity of 20%RH and B is a humidity of 40φRH.
Ｃは湿度６０優ＲＨ，Ｄは湿度８０％ＲＨの場合の特性
であるが、高域周波数においては湿度変化の影響をまっ
たく受けていないことがわかる。C is the characteristic when the humidity is 60% RH, and D is the characteristic when the humidity is 80% RH, but it can be seen that high frequencies are not affected by changes in humidity at all.
以上の実験結果から、この温度・湿度検知素子は、低周
波電源印加条件のもとではその電気インピーダンスの変
化が湿度に依存し、高周波電源印加条件のもとではその
電気インピーダンスの変化が温度に依存する特性を有す
ることがわかる。From the above experimental results, it is clear that the change in electrical impedance of this temperature/humidity sensing element depends on humidity under low frequency power supply conditions, and that the change in electrical impedance depends on temperature under high frequency power supply conditions. It can be seen that it has dependent properties.
前記の例は、Ｐ ｂ （Ｍ ｇｘ ／ａ Ｎｂ２ ／３
） ０３を成分とする場合について示したが、この温
度・湿度検知素子の構成はこれに限定されるものではな
く、一般にＰｂＸＯ３で示される成分を主成分として構
成した場合にも同様の効果が得られることが実験により
判明した。The above example is P b (M gx /a Nb2 /3
) Although the structure of the temperature/humidity sensing element is not limited to this, the same effect can be obtained even when the main component is a component represented by PbXO3. Experiments have shown that
ただし、Ｘは（Ｍｇｔ／２Ｗ１／２） 、（Ｃｄｌ／２
Ｗｌ／２）−（Ｃｏ１／２Ｗ１／２）、（Ｓｃ１／２Ｎ
ｂ、／２）。However, X is (Mgt/2W1/2), (Cdl/2
Wl/2) - (Co1/2W1/2), (Sc1/2N
b, /2).
（Ｆｅ１／２Ｎｂ１／２）（工ｎ１／２Ｎｂ、／２）（
Ｙｂｌ／２Ｎｂｌ／２） （ＨＯＩ／２Ｎｂｌ／２）
（Ｆｅ１／２Ｔａ１／２） （ＳＣ１／２Ｔａ１／２）
（Ｌｕ１／２Ｎｂ１／２） （Ｌｕｌ／２Ｔａ１／２
）（Ｚｎ１／５Ｎｂ２／ａ） （ＣＯＩ／３Ｎｂ２／
３）（Ｎｉ１／ｓＮｌ’２／ａ） （Ｍｇ１／５Ｔａ
２／ｓ）（Ｃ０１／３Ｔ ａ２ ／ａ ） （Ｎｉ１
／３Ｔａ２／３ ）（Ｆ ｅ２／３Ｗｌ ／３ ）−
（Ｍｎ２／３Ｗ１ ／ｓ ）のうち少なくとも１つを含
む成分とする。(Fe1/2Nb1/2) (Eng n1/2Nb, /2) (
Ybl/2Nbl/2) (HOI/2Nbl/2)
(Fe1/2Ta1/2) (SC1/2Ta1/2)
(Lu1/2Nb1/2) (Lul/2Ta1/2
) (Zn1/5Nb2/a) (COI/3Nb2/
3) (Ni1/sNl'2/a) (Mg1/5Ta
2/s) (C01/3T a2 /a) (Ni1
/3Ta2/3) (F e2/3Wl /3)-
(Mn2/3W1/s).
前記各種温度・湿度検知素子の温度および湿度特性の実
験結果を表に示す。The experimental results of the temperature and humidity characteristics of the various temperature and humidity sensing elements are shown in the table.
さらに、この温度・湿度検知素子の構成は前記ＰｂＸ０
３の成分のものに限られるものではなく、これにＢａＴ
ｉＯ３，５ｒＴｉ０３ 、ｐｂ’ｒｉｏ３゜ＣａＴｉ
Ｏ３５ＰｂＺｒ０３ 、ＫＮｂＯ３ＮａＮｂ０ ５Ｌ
ｉＮｂＯ、ＬｉＴａＯ３。Furthermore, the configuration of this temperature/humidity sensing element is the PbX0
It is not limited to the components of 3, but it also contains BaT.
iO3,5rTi03, pb'rio3゜CaTi
O35PbZr03, KNbO3NaNb0 5L
iNbO, LiTaO3.
３ ３
Ｐｂ（Ｍｇｘ／ａＮｋ）２／ａ）Ｏｓおよびその他のペ
ロブスカイトタイプ タングステンブロンズタイプ、パ
イロクロアタイプ、スピネルタイプさらには金属酸化物
などの化合物を１種または複数種加えても、応答性が早
く、特性劣化の極めてすくない高感度でしかも温度と湿
度検出時の温度および湿度の分離がすぐれた素子を得る
ことができる。3 3 Pb(Mgx/aNk)2/a)Os and other perovskite types Even if one or more compounds such as tungsten bronze type, pyrochlore type, spinel type, and metal oxides are added, the response is fast. It is possible to obtain a highly sensitive element with extremely low characteristic deterioration and excellent separation of temperature and humidity during temperature and humidity detection.
また、さらにはそれ以外の添加物を加えることによっで
ある限られた湿度あるいは温度検知範囲内で、高感度と
なるようその特性を制御することもできる。Further, by adding other additives, the characteristics can be controlled to achieve high sensitivity within a certain limited humidity or temperature sensing range.
また、この温度・湿度検知素子は耐熱性に優れた性質を
も有しており、大気中の浮遊物質によってこの素子が汚
染した場合でも、加熱クリーニングを行なってもとの状
態に戻すこともできる。This temperature/humidity sensing element also has excellent heat resistance, so even if the element becomes contaminated with airborne particles, it can be returned to its original state by heating and cleaning. .
なお、この素子の寸法、形状および構造については、前
記の例のものに限定されるものではなく、種々の寸法、
形状のものが可能である。Note that the dimensions, shape, and structure of this element are not limited to those in the example above, and may be of various dimensions, shapes, and structures.
Any shape is possible.
第５図は、前記温度・湿度検知素子を用いた温度・湿度
検知装置の一実施例を示し、６０Ｈｚ−ｉｖのオシレー
タｏｓｃ−１と５００ＫＨｚ−ＩＶのオシレータ０８Ｃ
−２を並列に構成するとともに、切換スイッチＳＷによ
って前記各オシレータ０８Ｃ−１，０８Ｃ−２に切換接
続できるようにした電源に対し、前記温度・湿度検知素
子Ｓと抵抗器（ＩＯＫΩ）Ｒ８を直列に接続して構成す
る。FIG. 5 shows an embodiment of a temperature/humidity detection device using the temperature/humidity detection element, in which a 60Hz-IV oscillator osc-1 and a 500KHz-IV oscillator 08C are used.
-2 are configured in parallel, and the temperature/humidity sensing element S and resistor (IOKΩ) R8 are connected in series to a power supply that can be connected to each of the oscillators 08C-1 and 08C-2 by a changeover switch SW. Connect to and configure.
このように構成したことにより、たとえば、切換スイッ
チＳＷをａ側に倒すと、オシレータ０８Ｃ−１に接続さ
れ、抵抗器Ｒ８に、湿度変化に応じた出力信号が得られ
、また切換スイッチＳＷをｂ側に倒すと、オシレータ０
８Ｃ−２に接続され、抵抗器Ｒ８に、温度変化に応じた
出力信号が得られる。With this configuration, for example, when the changeover switch SW is turned to the a side, it is connected to the oscillator 08C-1, and an output signal corresponding to the humidity change is obtained to the resistor R8, and the changeover switch SW is turned to the b side. When tilted to the side, oscillator 0
8C-2, and an output signal corresponding to the temperature change is obtained from the resistor R8.
なお、この実施例の構成によるときは、温度Ｏ℃〜２５
０℃、湿度１０饅ＲＨ〜９９％ＲＨの範囲に亘る検知が
可能である。Note that when using the configuration of this embodiment, the temperature is 0°C to 25°C.
Detection is possible over the range of 0°C and humidity of 10 RH to 99% RH.
以上のように、この温度・湿度検知装置によれば、温度
と湿度の検出を１つの回路構成によって行なうことがで
き、空調管理、気象、食品工業、医化学関係などの分野
における温度・湿度制御のための装置の構成が簡略化で
き、装置コストの低減化を果たすことができる。As described above, this temperature/humidity detection device can detect temperature and humidity with a single circuit configuration, and can be used for temperature/humidity control in fields such as air conditioning management, meteorology, food industry, and medical and chemical fields. The configuration of the device for this purpose can be simplified, and the cost of the device can be reduced.
第１図はこの発明の一実施例で用いられる温度・湿度検
知素子の一例を示す斜視図、第２図は温度・湿度検知素
子の湿度対インピーダンス特性を示す図、第３図は温度
・湿度検知素子の温度対インピーダンス特性を示す図、
第４図は温度・湿度検知素子の周波数対インピーダンス
特性を示す図、第５図は温度・湿度検知装置の一実施例
を示す回路図である。
１・・・焼結体（酸化物磁器）、２・・・電極、０８Ｃ
−１，０８Ｃ−２・・・オシレータ、ＳＷ・・・切換ス
イッチ、Ｓ・・・温度・湿度検知素子、Ｒ８・・・抵抗
器。Fig. 1 is a perspective view showing an example of a temperature/humidity sensing element used in an embodiment of the present invention, Fig. 2 is a diagram showing humidity versus impedance characteristics of the temperature/humidity sensing element, and Fig. 3 is a diagram showing temperature/humidity sensing elements. A diagram showing the temperature vs. impedance characteristics of the sensing element,
FIG. 4 is a diagram showing the frequency versus impedance characteristics of the temperature/humidity sensing element, and FIG. 5 is a circuit diagram showing one embodiment of the temperature/humidity sensing device. 1... Sintered body (oxide porcelain), 2... Electrode, 08C
-1,08C-2...Oscillator, SW...Changing switch, S...Temperature/humidity detection element, R8...Resistor.
Claims (1)
を設けた温度・湿度検知素子と、周波数を選択的に変更
できる電源回路とを接続したことを特徴とする温度・湿
度検知装置。 ただし、Ｘは（Ｍｇｘ／２％／２）・（Ｃｄｌ／２Ｗｌ
／２ ）・（Ｃ０１／２Ｗｌ ／２ ）・（ＳＣ１／
２Ｎｂ１／２）・（Ｆｅ１／２Ｎｂ１／２） （Ｉｎ１
／２Ｎｂ１／２）（Ｙｂ１／２Ｎｂ１／２） （Ｈ０１
／２Ｎｂ１／２）（Ｆｅ０／２Ｔａ１／２） （ＳＣ１
／２Ｔａ１／２）（Ｌｕｌ／２Ｎｂｌ／２） （Ｌｕ
ｌ／２Ｔａｌ／２）（Ｍｇｘ／ａＮｂ２／ａ） （Ｚ
ｎｌ／３Ｎｂ２／３）（Ｃ０１／３ Ｎ ｂ２／３ ）
（Ｎ ｉ１／ｓＮ ｂ２／３ ）（Ｍｇｌ／ａＴａ
２／ｓ）＃（ｃＯｔ／５Ｔａ２／ｓ） ＃（Ｎｉ１／３
Ｔａ２／３）−（Ｆｅ２／ｓＷｔ／ｓ） ・（Ｍ ｎ
２７ｓ Ｗｔ ７ｓ ）のうち少なくとも１つを含む成
分。[Scope of Claims] 1. A temperature/humidity detection device characterized in that a temperature/humidity detection element having an electrode surface provided on oxide porcelain whose main component is PbXO3 is connected to a power supply circuit that can selectively change the frequency. Humidity detection device. However, X is (Mgx/2%/2)・(Cdl/2Wl
/2 )・(C01/2Wl /2 )・(SC1/
2Nb1/2)・(Fe1/2Nb1/2) (In1
/2Nb1/2) (Yb1/2Nb1/2) (H01
/2Nb1/2) (Fe0/2Ta1/2) (SC1
/2Ta1/2) (Lul/2Nbl/2) (Lu
l/2Tal/2) (Mgx/aNb2/a) (Z
nl/3Nb2/3) (C01/3 Nb2/3)
(N i1/sN b2/3 ) (Mgl/aTa
2/s) #(cOt/5Ta2/s) #(Ni1/3
Ta2/3)-(Fe2/sWt/s) ・(M n
27s Wt 7s ).
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54072548A JPS5839363B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
| US06/107,183 US4319485A (en) | 1978-12-28 | 1979-12-26 | Temperature·humidity detecting apparatus |
| EP79105393A EP0013030B1 (en) | 1978-12-28 | 1979-12-28 | Temperature-humidity detecting apparatus |
| CA342,757A CA1132368A (en) | 1978-12-28 | 1979-12-28 | Temperature-humidity detecting element and detecting apparatus using the element |
| DE7979105393T DE2962487D1 (en) | 1978-12-28 | 1979-12-28 | Temperature-humidity detecting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54072548A JPS5839363B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55165502A JPS55165502A (en) | 1980-12-24 |
| JPS5839363B2 true JPS5839363B2 (en) | 1983-08-30 |
Family
ID=13492517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54072548A Expired JPS5839363B2 (en) | 1978-12-28 | 1979-06-09 | Temperature/humidity detection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839363B2 (en) |
-
1979
- 1979-06-09 JP JP54072548A patent/JPS5839363B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55165502A (en) | 1980-12-24 |
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