JPS5839370B2 - Temperature/humidity detection device - Google Patents
Temperature/humidity detection deviceInfo
- Publication number
- JPS5839370B2 JPS5839370B2 JP54072555A JP7255579A JPS5839370B2 JP S5839370 B2 JPS5839370 B2 JP S5839370B2 JP 54072555 A JP54072555 A JP 54072555A JP 7255579 A JP7255579 A JP 7255579A JP S5839370 B2 JPS5839370 B2 JP S5839370B2
- Authority
- JP
- Japan
- Prior art keywords
- humidity
- temperature
- detection device
- humidity detection
- sensing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 title claims description 14
- 229910052573 porcelain Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- 229910003334 KNbO3 Inorganic materials 0.000 description 1
- 229910003378 NaNbO3 Inorganic materials 0.000 description 1
- 229910019704 Nb2O Inorganic materials 0.000 description 1
- 229910020698 PbZrO3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000026041 response to humidity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- MUPJWXCPTRQOKY-UHFFFAOYSA-N sodium;niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Na+].[Nb+5] MUPJWXCPTRQOKY-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】 この発明は湿度・湿度検知装置に関するものである。[Detailed description of the invention] This invention relates to a humidity/humidity detection device.
従来、湿度測定装置や湿度調節装置のセンサとして、Ｆ
ｅ２Ｏ３・Ａｌ２Ｏ，など吸水性に優れた金属酸化物を
主成分として湿度に感応して変化するその抵抗値から湿
度が検出される感湿抵抗体が一般に用いられていた。Conventionally, F has been used as a sensor for humidity measuring devices and humidity regulating devices.
Humidity-sensitive resistors, which are mainly composed of metal oxides with excellent water absorption properties such as e2O3.Al2O, and whose resistance value changes in response to humidity, are used to detect humidity.
しかしながら、たとえば空調システムにおいては湿度制
御と同時に温度制御が行なわれるなど、一般には湿度の
みを単独に検知する場合よりも湿度と湿度を併せて検知
することを要請される場合の方がむしろ多く、この要請
に応えるためには、たとえば湿度検知用として前記感湿
抵抗体を、流度検知用としてサーミスタをそれぞれ別個
に用い、湿度検知回路と温度検知回路とをおのおの独立
させて２系統の回路構成を採らなければならなかった。However, in general, there are more cases in which it is required to detect humidity and humidity together than to detect humidity alone, for example in air conditioning systems where temperature control is performed at the same time as humidity control. In order to meet this demand, for example, the humidity sensing resistor is used separately for detecting humidity, and the thermistor is used for detecting flow rate, and the humidity detection circuit and temperature detection circuit are made independent of each other to form a two-system circuit configuration. had to be taken.
そのため回路構成が複雑となり装置の製造コストも増大
するという欠点を有していた。This has resulted in a disadvantage that the circuit configuration becomes complicated and the manufacturing cost of the device also increases.
したがって、この発明の目的は、簡単かつ安価Ｚ回路構
成で温度および湿度の両方を検知することができる温度
・湿度検知装置を提供することである。Therefore, an object of the present invention is to provide a temperature/humidity detection device that can detect both temperature and humidity with a simple and inexpensive Z circuit configuration.
以下、この発明の実施例を図面に基づいて説明する。Embodiments of the present invention will be described below based on the drawings.
最初に、この温度・湿度検知装置に用いられる温度・湿
度検知素子の一例について第１図により詳しく説明する
。First, an example of a temperature/humidity sensing element used in this temperature/humidity sensing device will be explained in detail with reference to FIG. 1.
まず出発原料として、ＬｉＣＯ３・Ｎｂ２Ｏ，を湿式混
合した後、乾燥して乾燥粉末とする。First, as a starting material, LiCO3.Nb2O is wet mixed and then dried to form a dry powder.
つぎに、この粉末原料を４×４Ｘ０．２５ｍｍに成形（
成形圧７５０ｋｇ／ｄ）Ｌ、焼結体１としてＬ Ｉ Ｎ
ｂ ０３の酸化物磁器を生成する。Next, this powder raw material is molded into 4 x 4 x 0.25 mm (
Molding pressure 750 kg/d) L, sintered body 1 L I N
b 03 oxide porcelain is produced.
さらに前記焼結体１にＲｕＯ２系電極ペーストを塗布し
て８００℃で焼き付は電極２を形成して温度・湿度検知
素子を構成する。Further, a RuO2-based electrode paste is applied to the sintered body 1 and baked at 800°C to form an electrode 2 to form a temperature/humidity sensing element.
前記電極材料としては、ＲｕＯ２系以外にＡｇ。The electrode material may include Ag in addition to RuO2.
Ｎ １ ｐ Ｚ ｎ 、Ｃｒ ｔ Ｐ ｄ ＋ Ａｕ
ｔ Ｐ ｔ ｔ Ｓ ｎ ｇ Ｃｕ ｔ Ａ ｌ ｓ
Ｉ ｎを電極ペースト焼付法、溶射法、蒸着法などで塗
布しても同様の効果が得られる。N 1 p Z n , Cr t P d + Au
t P t t S n g C u t A l s
A similar effect can be obtained by applying In by an electrode paste baking method, thermal spraying method, vapor deposition method, or the like.
このような方法で酸化ニッケル、酸化亜鉛、酸化インジ
ウムを主成分とした金属酸化物および半導体などからな
る電極についても形成することができる。Electrodes made of metal oxides and semiconductors whose main components are nickel oxide, zinc oxide, and indium oxide can also be formed by such a method.
前記構成を有する温度・湿度検知素子の特性について、
実験結果に基づき以下に説明する。Regarding the characteristics of the temperature/humidity sensing element having the above configuration,
This will be explained below based on the experimental results.
第２図に示すグラフは、温度２０℃において両電極２，
２間に１０）Ｌ、−ＩＶの低周波電源を印加した場合の
、前記温度・湿度検知素子の相対湿度変化に伴なう電気
インピーダンスの変化を示すもので、湿度が上昇するに
つれて電気インピーダンスが減少していることがわかる
。The graph shown in FIG. 2 shows that both electrodes 2 and 2 at a temperature of 20°C
This shows the change in electrical impedance of the temperature/humidity sensing element as the relative humidity changes when a low frequency power source of 10)L, -IV is applied between the two, and as the humidity increases, the electrical impedance changes. It can be seen that it is decreasing.
また、同一印加電源の条件のもとに温度８０℃において
行なった前記特性の実験では、温度の相違による影響は
ほとんど受けないことが判明し、この結果、この温度・
湿度検知素子は、低周波電源を印加した条件のもとでは
、電気インピーダンスの変化は湿度にのみ依存すること
が判明した。Furthermore, in an experiment on the above characteristics conducted at a temperature of 80°C under the same applied power supply conditions, it was found that there was almost no effect due to temperature differences;
It was found that the change in electrical impedance of the humidity sensing element depends only on humidity under conditions where a low frequency power source is applied.
第３図に示すグラフは、湿度５０％ＲＨ（１〜９５℃）
において両電極２，２間に１０００ＫＨｚ−ｉｖの高周
波電源を印加した場合の、温度変化に伴なう温度・湿度
検知素子の電気インピーダンスの変化を示すもので、温
度変化に対応してその電気インピーダンスが変化してい
ることがわかる。The graph shown in Figure 3 shows the humidity at 50% RH (1 to 95°C).
This shows the change in electrical impedance of the temperature/humidity sensing element due to temperature change when a 1000 KHz-iv high frequency power source is applied between both electrodes 2 and 2. It can be seen that the is changing.
また、同一印加電源の条件のもとに相対湿度を１０％、
９９％とした場合にも、前記特性にほとんど変化はない
ことが判明した。Also, under the same applied power supply conditions, the relative humidity was 10%,
It was found that even when the ratio was set to 99%, there was almost no change in the above characteristics.
第４図に示すグラフは、湿度をパラメータとした場合の
温度２０℃における周波数−電気インピーダンス特性で
あり、Ａは湿度２０％ＲａＢ！ま湿度４０％ＲＨ，Ｃは
湿度６０％ＲＨ，Ｄ は湿度８０φ胆の場合の特性で
あるが、高域周波数においては湿度変化の影響をまった
く受けていないことがわかる。The graph shown in FIG. 4 is the frequency-electrical impedance characteristic at a temperature of 20°C when humidity is used as a parameter, and A is a humidity of 20% RaB! Although the humidity is 40% RH, C is the characteristic when the humidity is 60% RH, and D is the characteristic when the humidity is 80φ, it can be seen that high frequencies are not affected by humidity changes at all.
以上の実験結果から、この温度・湿度検知素子は、低周
波電源印加条件のもとではその電気インピーダンスの変
化が湿度に依存し、高周波電源印加条件のもとではその
電気インピーダンスの変化が温度に依存する特性を有す
ることがわかる。From the above experimental results, it is clear that the change in electrical impedance of this temperature/humidity sensing element depends on humidity under low frequency power supply conditions, and that the change in electrical impedance depends on temperature under high frequency power supply conditions. It can be seen that it has dependent properties.
この温度・湿度検知素子の構成は前記Ｌ ｉ Ｎｂ０（
の成分のものに限られるものではなく、これにＢａＴｉ
０．．５ｒＴｉ０３ｙＰｂＴｉ０３．ＣａＴｉＯ３。The configuration of this temperature/humidity sensing element is the above-mentioned L i Nb0(
It is not limited to the components of
0. ．． 5rTi03yPbTi03. CaTiO3.
ＰｂＺｒＯ３，ＫＮｂＯ３，ＮａＮｂＯ３，ＬｉＴａＯ
３。PbZrO3, KNbO3, NaNbO3, LiTaO
3.
Ｐｂ（ＭｇｘＡＮｂ２／ｓ ）０３およびその他のペロ
ブスカイトタイプ、タングステンブロンズタイプ、パイ
ロクロアタイプ、スピネルタイプさらには金属酸化物な
どの化合物を１種または複数種加えても、応答性が早く
、特性劣化の極めてすくない高感度でしかも温度と湿度
検出時の温度および湿度の分離がすぐれた素子を得るこ
とができる。Even when one or more compounds such as Pb(MgxANb2/s)03 and other perovskite types, tungsten bronze types, pyrochlore types, spinel types, or even metal oxides are added, the response is quick and there is very little property deterioration. It is possible to obtain an element that has high sensitivity and excellent separation of temperature and humidity when detecting temperature and humidity.
また、さらにはそれ以外の添加物を加えることによっで
ある限られた湿度あるいは温度検知範囲内で、高感度と
なるようその特性を制御することもできる。Further, by adding other additives, the characteristics can be controlled to achieve high sensitivity within a certain limited humidity or temperature detection range.
また、この温度・湿度検知素子は耐熱性に優れた性質を
も有しており、大気中の浮遊物質によってこの素子が汚
染した場合でも、加熱クリーニングを行なってもとの状
態に戻すこともできる。This temperature/humidity sensing element also has excellent heat resistance, so even if the element becomes contaminated with airborne particles, it can be returned to its original state by heating and cleaning. .
なお、この素子の寸法、形状および構造については、前
記の例のものに限定されるものではなく、種々の寸法、
形状のものが可能である。Note that the dimensions, shape, and structure of this element are not limited to those in the example above, and may be of various dimensions, shapes, and structures.
Any shape is possible.
第５図は、前記温度・湿度検知素子を用いた温度・湿度
検知装置の一実施例を示し、６０Ｈｚ−ＩＶ（７）オシ
レータ０８Ｃ−１と５００ＫＨｚ−ＩＶのオシレータＯ
Ｓ Ｃ−２を並列に構成するとともに、切換スイッチ呂
Ｖによって前記各オシレータ０８Ｃ−１゜０８Ｃ−２に
切換接続できるようには電源に対し 前記温度・湿度検
知素子Ｓと抵抗器（１０にΩ）Ｒ８を直列に接続して構
成する。FIG. 5 shows an embodiment of a temperature/humidity detection device using the temperature/humidity detection element, in which a 60Hz-IV (7) oscillator 08C-1 and a 500KHz-IV oscillator O
In addition to configuring the S C-2 in parallel, the temperature/humidity sensing element S and the resistor (10 and Ω ) R8 are connected in series.
このように構成したことにより、たとえば、切換スイッ
チＳＷをａ側に倒すと、オシレータ０８Ｃ−１に接続さ
れ、抵抗器塩に湿度変化に応じた出力信号が得られ、ま
た切換スイッチＳＷをｂ側に倒すと、オシレータ０８Ｃ
−２に接続され、抵抗器塩に温度変化に応じた出力信号
が得られる。With this configuration, for example, when the changeover switch SW is turned to the a side, it is connected to the oscillator 08C-1, and an output signal corresponding to the humidity change is obtained to the resistor salt, and when the changeover switch SW is turned to the b side, it is connected to the oscillator 08C-1. When you turn it down, oscillator 08C
-2, and an output signal corresponding to the temperature change is obtained from the resistor salt.
なお、この実施例の構、成によるときは、温度Ｏ℃〜３
００℃、湿度１０％ＲＨ〜１００多ＲＨの範囲に旦る検
知が可能である。In addition, when using the configuration of this embodiment, the temperature is 0°C to 3°C.
Detection is possible at temperatures ranging from 00°C and humidity of 10% RH to 100% RH.
以上のように、この温度・湿度検知装置によれば、温度
と湿度の検出を１つの回路構成によって行なうことがで
き、空調管理ψ気象！食品工業り医化学関係などの分野
における温度・湿度制御のための装置の構成が簡略化で
き、装置コストの低減化を果たすことができる。As described above, according to this temperature/humidity detection device, temperature and humidity can be detected using one circuit configuration, and air conditioning management ψ weather! The structure of a device for controlling temperature and humidity in fields such as the food industry and medical chemistry can be simplified, and the cost of the device can be reduced.
第１図はこの発明の一実施例で用いられる温度・弧度検
知素子の一例を示す斜視図、第２図は温度。
醒度検知素子の湿度対インピーダンス特性を示す図、第
３図は温度・湿度検知素子の湿度対インピータンス特性
を示す図、第４図は温度・湿度検知素子の周波数対イン
ピーダンス特性を示す図、第５園は湿度・湿度検知装置
の一実施例を示す回路図である。
１・・・・・・焼結体（酸化物磁器）、２・・・・・・
電極、ｏｓｃ−ｉ 、０８Ｃ−２・・・・・・オシレー
タ、ＳＷ・・・・・切換スイッチ、Ｓ・・・・・・温度
・湿度検知素子、塊・・・・・・抵抗器。FIG. 1 is a perspective view showing an example of a temperature/arc detection element used in an embodiment of the present invention, and FIG. 2 shows temperature. FIG. 3 is a diagram showing the humidity vs. impedance characteristics of the temperature/humidity sensing element; FIG. 4 is a diagram showing the frequency vs. impedance characteristics of the temperature/humidity sensing element; The fifth diagram is a circuit diagram showing one embodiment of the humidity/humidity detection device. 1... Sintered body (oxide porcelain), 2...
Electrode, osc-i, 08C-2...Oscillator, SW...Changing switch, S...Temperature/humidity sensing element, block...Resistor.
Claims (1)
極面を設けた温度・湿度検知素子と、周波数を選択的に
変更できる電源回路とを接続したことを特徴とする温度
・湿度検知装置。A temperature/humidity detection device characterized by connecting a temperature/humidity detection element having an electrode surface on oxide porcelain whose main components are I LiNb (four components) and a power supply circuit whose frequency can be selectively changed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54072555A JPS5839370B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54072555A JPS5839370B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55165509A JPS55165509A (en) | 1980-12-24 |
| JPS5839370B2 true JPS5839370B2 (en) | 1983-08-30 |
Family
ID=13492713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54072555A Expired JPS5839370B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839370B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6247474U (en) * | 1985-09-12 | 1987-03-24 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848401A (en) * | 1981-09-17 | 1983-03-22 | オムロン株式会社 | Humidity sensitive element |
-
1979
- 1979-06-09 JP JP54072555A patent/JPS5839370B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6247474U (en) * | 1985-09-12 | 1987-03-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55165509A (en) | 1980-12-24 |
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