JPS5839364B2 - Temperature/humidity detection device - Google Patents
Temperature/humidity detection deviceInfo
- Publication number
- JPS5839364B2 JPS5839364B2 JP54072549A JP7254979A JPS5839364B2 JP S5839364 B2 JPS5839364 B2 JP S5839364B2 JP 54072549 A JP54072549 A JP 54072549A JP 7254979 A JP7254979 A JP 7254979A JP S5839364 B2 JPS5839364 B2 JP S5839364B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- humidity
- sensing element
- detection device
- humidity detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 title claims description 8
- 229910052573 porcelain Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 229910020698 PbZrO3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000026041 response to humidity Effects 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】 この発明は温度・湿度検知装置に関するものである。[Detailed description of the invention] This invention relates to a temperature/humidity sensing device.
、従来、湿度測定装置や湿度調節装置のセンサとして、
Ｆｅ２０ＢｍＦｅ２０Ｂなど吸水性に優れた金属酸化物
を主成分とし湿度に感応して変化するその抵抗値から湿
度が検出される感湿抵抗体が一般に用いられていた。, conventionally used as a sensor for humidity measuring devices and humidity regulating devices.
Moisture-sensitive resistors, which are mainly composed of metal oxides with excellent water absorption properties such as Fe20BmFe20B, and whose resistance value changes in response to humidity, and are used to detect humidity, have generally been used.
しかしながら、たとえば空調システムにおいては湿度制
御と同時に温度制御が行なわれるなど、一般には湿度の
みを単独に検知する場合よりも湿度と温度を併せて検知
する゛ことを要請される場合の方がむしろ多く、この要
請に応えるためには、たとえば湿度検知用として前記感
湿抵抗体を、温度検知用としてサーミスタをそれぞれ別
個に用い、湿度検知回路と温度検知回路とをおのおの独
立させて２系統の回路構成を採らなければならなかった
。However, in general, there are more cases in which it is required to detect humidity and temperature together than to detect humidity alone, for example in air conditioning systems where temperature control is performed at the same time as humidity control. In order to meet this demand, for example, the humidity sensing resistor is used separately for detecting humidity, and the thermistor is used for detecting temperature separately, and the humidity detecting circuit and the temperature detecting circuit are made independent of each other to form a two-system circuit configuration. had to be taken.
そのため回路構成が複雑となり装置の製造コストも増大
するという欠点を有していた。This has resulted in a disadvantage that the circuit configuration becomes complicated and the manufacturing cost of the device also increases.
したがって、この発明の目的は、簡単かつ安価な回路構
成で温度および湿度の両方を検知することができる温度
・湿度検知装置を提供することである。Therefore, an object of the present invention is to provide a temperature/humidity detection device that can detect both temperature and humidity with a simple and inexpensive circuit configuration.
以下、この発明の実施例を図面に基づＬ・て説明する。Embodiments of the present invention will be described below based on the drawings.
最初に、この温度・湿度検知装置に用いられる温度・湿
度検知素子の一例について第１図により詳しく説明する
。First, an example of a temperature/humidity sensing element used in this temperature/humidity sensing device will be explained in detail with reference to FIG. 1.
まず出発原料として、Ｐ ｂ Ｏｓ Ｚ ｒ ０２を湿
式混合上た後、乾燥して乾燥粉末とする。First, as a starting material, P b Os Z r 02 is wet mixed and then dried to form a dry powder.
つぎに、この粉末原料を４×４×０．２５藺に底形（成
形圧７５０〜／ｃｒ／ｉ）シ、焼結体１としてＰｂＺｒ
Ｏ３の酸化物磁器を生成する。Next, this powder raw material was shaped into a 4 x 4 x 0.25 size (molding pressure 750~/cr/i), and the sintered body 1 was made of PbZr.
Produces O3 oxide porcelain.
さらに前記焼結体１にＲｕＯ２系電極ペーストを塗布し
て８００℃で焼き付は電極２を形成して温度・湿度検知
素子を構成する。Further, a RuO2-based electrode paste is applied to the sintered body 1 and baked at 800°C to form an electrode 2 to form a temperature/humidity sensing element.
前記電極材料としては、Ｒｕ ０２系以外にＡｇ。As the electrode material, Ag is used in addition to Ru02 type.
Ｎｉ 、Ｚｎ、Ｃｒ、Ｐｄ、Ａｕ、Ｐｔ、５ｎｅＣｕ
ｓ Ａ ｌ ＝ Ｉ ｎを電極ペースト焼付法、溶射法
、蒸着法などで塗布しても同様の効果が得られる。Ni, Zn, Cr, Pd, Au, Pt, 5neCu
Similar effects can be obtained by applying s A l = I n by an electrode paste baking method, thermal spraying method, vapor deposition method, or the like.
このような方法で酸化ニッケル、酸化亜鉛、酸化インジ
ウムを主成分とした金属酸化物および半導体などからな
る電極についても形成することができる。Electrodes made of metal oxides and semiconductors whose main components are nickel oxide, zinc oxide, and indium oxide can also be formed by such a method.
前記構成を有する温度・湿度検知素子の特性について、
実験結果に基づき以下に説明する。Regarding the characteristics of the temperature/humidity sensing element having the above configuration,
This will be explained below based on the experimental results.
第２図に示すグラフは、温度２０℃において両電極２，
２間に１０Ｈｚ−１ｖの低周波電源を印加した場合の、
前記温度・湿度検知素子の相対湿度変化に伴なう電気イ
ンピーダンスの変化を示すもので、湿度が上昇するにつ
れて電気インピーダンスが減少していることがわかる。The graph shown in FIG. 2 shows that both electrodes 2 and 2 at a temperature of 20°C
When a low frequency power supply of 10Hz-1v is applied between 2,
This figure shows the change in electrical impedance of the temperature/humidity sensing element as the relative humidity changes, and it can be seen that the electrical impedance decreases as the humidity increases.
また、同一印加電源の条件のもとに温度８０℃において
行なりた前記特性の実験では、温度の相違による影響は
ほとんど受けないことが判明し、この結果、この温度・
湿度検知素子は、低周波電源を印加した条件のもとでは
、電気インピーダンスの変化は湿度にのみ依存すること
が判明した。Furthermore, in an experiment on the above characteristics conducted at a temperature of 80°C under the same applied power supply conditions, it was found that there was almost no effect due to temperature differences;
It was found that the change in electrical impedance of the humidity sensing element depends only on humidity under conditions where a low frequency power source is applied.
第３図に示すグラフは、湿度５０％ＲＨ（１〜９５℃）
において両電極２，２間に１０００ ＫＨｚ−ＩＶの高
周波電源を印加した場合の、温度変化に伴なう温度・湿
度検知素子の電気インピーダンスの変化を示すもので、
温度変化に対応してその電気インピーダンスが変化して
いることがわかる。The graph shown in Figure 3 shows the humidity at 50% RH (1 to 95°C).
This shows the change in electrical impedance of the temperature/humidity sensing element due to temperature change when a 1000 KHz-IV high frequency power source is applied between both electrodes 2 and 2.
It can be seen that the electrical impedance changes in response to temperature changes.
また、同一印加電源の条件のもとに相対湿度を１０１％
、９９％とした場合にも、前記特性にほとんと変化はな
いことが判明した。Also, under the same applied power condition, the relative humidity is 101%.
, 99%, it was found that there was almost no change in the above characteristics.
第４図に示すグラフは、湿度をパラメータとした場合の
温度２０°Ｃにおける周波数−電気インピーダンス特性
であり、Ａは湿度２０％ＲＨ，Ｂは湿度４０％ＲＨ。The graph shown in FIG. 4 shows frequency-electrical impedance characteristics at a temperature of 20° C. when humidity is used as a parameter, where A is a humidity of 20% RH and B is a humidity of 40% RH.
Ｃは湿度６０φＲＨ，Ｄは湿度８０φＲＨの場合の特性
であるが、高域周波数においては湿度変化の影響をまっ
たく受けていないことがわかる。C is the characteristic when the humidity is 60φRH, and D is the characteristic when the humidity is 80φRH, but it can be seen that high frequencies are not affected by humidity changes at all.
以上の実験結果から、この温度・湿度検知素子は、低周
波電源印加条件のもとではその電気インピーダンスの変
化が湿度に依存し、高周波電源印加条件のもとではその
電気インピーダンスの変化が温度に依存する特性を有す
ることがわかる。From the above experimental results, it is clear that the change in electrical impedance of this temperature/humidity sensing element depends on humidity under low frequency power supply conditions, and that the change in electrical impedance depends on temperature under high frequency power supply conditions. It can be seen that it has dependent properties.
この温度・湿度検知素子の構成は前記ＰｂＺｒＯ３の成
分のものに限られるものではなく、これにＢａＴｉ０
．５ｒＴｉ０３ ５ＰｂＴｉ０３Ｃａ Ｔ ｉ ０３
、 ＫＮ ｂ ０３ ｘ Ｎ ａ Ｎｂ ０３Ｌｉ
Ｎｂ０３ 、ＬｉＴａＯ２、Ｐｂ（Ｍｇｔ／３Ｎｂ２
／ａ）Ｏｓおよびその他のペロブスカイトタイプ、タン
グステンブロンズタイプ、パイロクロアタイプ、スピネ
ルタイプさらには金属酸化物なとの化合物を１種または
複数種加えても、応答性が早く、特性劣化の極めてすく
ない高感度でしかも温度と湿度検出時の温度および湿度
の分離がすぐれた素子を得ることができる。The structure of this temperature/humidity sensing element is not limited to the above-mentioned PbZrO3 component, but also includes BaTi0
．． 5rTi03 5PbTi03Ca T i 03
, KN b 03 x Na Nb 03Li
Nb03, LiTaO2, Pb(Mgt/3Nb2
/a) High sensitivity with fast response and extremely low characteristic deterioration even when one or more compounds such as Os and other perovskite types, tungsten bronze types, pyrochlore types, spinel types, and even metal oxides are added. Moreover, it is possible to obtain an element with excellent separation of temperature and humidity when detecting temperature and humidity.
また、さらにはそれ以外の添加物を加えることによっで
ある限られた湿度あるいは温度検知範囲内で、高感度と
なるようその特性を制御することもできる。Further, by adding other additives, the characteristics can be controlled to achieve high sensitivity within a certain limited humidity or temperature sensing range.
また、この温＋ｉ・湿度検知素子は耐熱性に優れた性質
をも有しており、大気中の浮遊物質によってこの素子が
汚染した場合でも、加熱クリーニングを行なってもとの
状態に戻すこともできる。In addition, this temperature+i/humidity sensing element also has excellent heat resistance, so even if this element becomes contaminated with airborne particles, it can be returned to its original state by heating and cleaning. can.
なお、この素子の寸法、形状および構造については、前
記の例のものに限定されるものではなく、種々の寸法、
形状のものが可能である。Note that the dimensions, shape, and structure of this element are not limited to those in the example above, and may be of various dimensions, shapes, and structures.
Any shape is possible.
第５図は、前記温度・湿度検知素子を用いた温度・湿度
検知装置の一実施例を示し、６０Ｈｚ＝１Ｖのオシレー
タ０８Ｃ−１と５００ＫＨｚ−ＩＶのオシレータ０８Ｃ
−２を並列に構成するとともに、切換スイッチＳＷによ
って前記各オシレータ０８Ｃ−ｉ 、０８Ｃ−２に切換
接続できるようにした電源に対し、前記温度・湿度検知
素子Ｓと抵抗器（ＩＯＫΩ）Ｒ８を直列に接続して構成
する。FIG. 5 shows an embodiment of a temperature/humidity detection device using the temperature/humidity detection element, in which a 60Hz=1V oscillator 08C-1 and a 500KHz-IV oscillator 08C are used.
-2 in parallel, and the temperature/humidity sensing element S and resistor (IOKΩ) R8 are connected in series to a power supply that can be connected to each of the oscillators 08C-i and 08C-2 by a changeover switch SW. Connect to and configure.
このように構成したことにより、たとえば、切換スイッ
チＳＷをａ側に倒すと、オシレータ０８Ｃ−１に接続さ
れ、抵抗器Ｒ８に湿度変化に応じた出力信号が得られ、
また切換スイッチＳＷをｂ側に倒すと、オシレータ０８
Ｃ−２に接続され、抵抗器Ｒｓに温度変化に応じた出力
信号が得られる。With this configuration, for example, when the changeover switch SW is turned to the a side, it is connected to the oscillator 08C-1, and an output signal corresponding to the humidity change is obtained at the resistor R8.
Also, when the changeover switch SW is turned to the b side, the oscillator 08
C-2, and an output signal corresponding to temperature change is obtained from the resistor Rs.
なお、この実施例の構成によるとき＆東温度り℃〜２５
０℃、湿度１０饅ＲＨ〜９９％ＲＨの範囲に亘る検知が
可能である。In addition, when the configuration of this example is used, the temperature ranges from ℃ to 25℃.
Detection is possible over the range of 0°C and humidity of 10 RH to 99% RH.
以上のように、この温度・湿度検知装置によれば、温度
と湿度の検出を１つの回路構成によって行なうことがで
き、空調管理、気象１食品工業、医化学関係などの分野
における温度・湿度制御のための装置の構成が簡略化で
き、装置コストの低減化を果たすことができる。As described above, this temperature/humidity detection device can detect temperature and humidity with a single circuit configuration, and is useful for temperature/humidity control in fields such as air conditioning management, meteorological food industry, and medical and chemical fields. The configuration of the device for this purpose can be simplified, and the cost of the device can be reduced.
第１図はこの発明の一実施例で用いられる温度・湿度検
知素子の一例を示す斜視図、第２図は温度・湿度検知素
子の湿度対インピーダンス特性を示す図、第３図は温度
・湿度検知素子の温度対インピーダンス特性を示す図、
第４図は温度・湿度検知素子の周波数対インピーダンス
特性を示す図、第５図は温度・湿度検知装置の一実施例
を示す回路図である。
１・・・結焼体（酸化物磁器）、２・・・電［０８Ｃ−
１，０８Ｃ−２・・・オシレータ、ＳＷ・・・切換スイ
ッチ、Ｓ・・・温度・湿度検知素子、Ｒ８・・・抵抗器
。Fig. 1 is a perspective view showing an example of a temperature/humidity sensing element used in an embodiment of the present invention, Fig. 2 is a diagram showing humidity versus impedance characteristics of the temperature/humidity sensing element, and Fig. 3 is a diagram showing temperature/humidity sensing elements. A diagram showing the temperature vs. impedance characteristics of the sensing element,
FIG. 4 is a diagram showing the frequency versus impedance characteristics of the temperature/humidity sensing element, and FIG. 5 is a circuit diagram showing one embodiment of the temperature/humidity sensing device. 1... Sintered body (oxide porcelain), 2... Electric [08C-
1,08C-2... Oscillator, SW... Changeover switch, S... Temperature/humidity detection element, R8... Resistor.
Claims (1)
面を設けた温度・湿度検知素子と、周波数を選択的に変
更できる電源回路とを接続したことを特徴とする温度・
湿度検知装置。1. A temperature/humidity sensor characterized by connecting a temperature/humidity sensing element having an electrode surface on oxide porcelain whose main component is PbzrO3 and a power supply circuit that can selectively change the frequency.
Humidity detection device.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54072549A JPS5839364B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
| US06/107,183 US4319485A (en) | 1978-12-28 | 1979-12-26 | Temperature·humidity detecting apparatus |
| EP79105393A EP0013030B1 (en) | 1978-12-28 | 1979-12-28 | Temperature-humidity detecting apparatus |
| CA342,757A CA1132368A (en) | 1978-12-28 | 1979-12-28 | Temperature-humidity detecting element and detecting apparatus using the element |
| DE7979105393T DE2962487D1 (en) | 1978-12-28 | 1979-12-28 | Temperature-humidity detecting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54072549A JPS5839364B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55165503A JPS55165503A (en) | 1980-12-24 |
| JPS5839364B2 true JPS5839364B2 (en) | 1983-08-30 |
Family
ID=13492545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54072549A Expired JPS5839364B2 (en) | 1978-12-28 | 1979-06-09 | Temperature/humidity detection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839364B2 (en) |
-
1979
- 1979-06-09 JP JP54072549A patent/JPS5839364B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55165503A (en) | 1980-12-24 |
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