JPS5839372B2 - Temperature/humidity detection device - Google Patents
Temperature/humidity detection deviceInfo
- Publication number
- JPS5839372B2 JPS5839372B2 JP54072557A JP7255779A JPS5839372B2 JP S5839372 B2 JPS5839372 B2 JP S5839372B2 JP 54072557 A JP54072557 A JP 54072557A JP 7255779 A JP7255779 A JP 7255779A JP S5839372 B2 JPS5839372 B2 JP S5839372B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- humidity
- sensing element
- detection device
- humidity detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 title claims description 8
- 229910052573 porcelain Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910003378 NaNbO3 Inorganic materials 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000026041 response to humidity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- MUPJWXCPTRQOKY-UHFFFAOYSA-N sodium;niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Na+].[Nb+5] MUPJWXCPTRQOKY-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
【発明の詳細な説明】 この発明は温度・湿度検知装置に関するものである。[Detailed description of the invention] The present invention relates to a temperature/humidity sensing device.
従来、湿度測定装置や湿度調節装置のセンサとして、Ｆ
ｅ ２０３ 、Ａ １２０ ｓなど吸水性に優れた金
属酸化物を主成分とし湿度に感応して変化するその抵抗
値から湿度が検出される感湿抵抗体が一般に用いられて
いた。Conventionally, F has been used as a sensor for humidity measuring devices and humidity regulating devices.
Humidity-sensitive resistors, which are mainly composed of metal oxides with excellent water absorption properties such as e 203 and A 120 s, and whose resistance value changes in response to humidity to detect humidity have been commonly used.
しかしながら、たとえば空調システムに釦いては湿度制
御と同時に温度制御が行なわれるなど、一般には湿度の
みを単独に・検知する場合よりも湿度と温度を併せて検
知することを要請される場合の方がむしろ多く、この要
請に応えるためには、たとえば湿度検知用として前記感
湿抵抗体を、温度検知用としてサーミスタをそれぞれ別
個に用い、湿度検知回路と温度検知回路とを釦の釦の独
立させて２系統の回路構成を採らなければならなかった
。However, in general, it is better to detect humidity and temperature together than to detect humidity alone, such as when temperature control is performed at the same time as humidity control on a button in an air conditioning system. In fact, in order to meet this demand, for example, the humidity sensing resistor is used separately for detecting humidity, and the thermistor is used for temperature sensing. A two-system circuit configuration had to be adopted.
そのため回路構成が複雑となり装置の製造コストも増大
するという欠点を有していた。This has resulted in a disadvantage that the circuit configuration becomes complicated and the manufacturing cost of the device also increases.
したがって、この発明の目的は、簡単かつ安価な回路構
成で温度釦よび湿度の両方を検知することができる温度
・湿度検知装置を提供することである。Therefore, an object of the present invention is to provide a temperature/humidity detection device that can detect both a temperature button and humidity with a simple and inexpensive circuit configuration.
以下、この発明の実施例を図面に基づいて説明する。Embodiments of the present invention will be described below based on the drawings.
最初に、この温度・湿度検知装置に用いられる温度・湿
度検知素子の一例について第１図により詳しく説明する
。First, an example of a temperature/humidity sensing element used in this temperature/humidity sensing device will be explained in detail with reference to FIG. 1.
渣ず出発原料として、ＰｂＯ１ＨｆＯ２を湿式混合した
後、乾燥して乾燥粉末とする。PbO1HfO2 is wet mixed as a raw material without residue and then dried to form a dry powder.
つぎに、この粉末原料を４Ｘ４Ｘ０．２５ｙ＋ｍ＋に成
形（成形圧７５０ ｋｇ／ｃｒ／１ ） Ｌ、焼結体１
としてＰｂＨｆＯ３の酸化物磁器を生成する。Next, this powder raw material was molded into 4X4X0.25y+m+ (molding pressure 750 kg/cr/1) L, sintered body 1
As a result, PbHfO3 oxide porcelain is produced.
さらに前記焼結体１にＲｕＯ２系電極ペーストを塗布し
て８００℃で焼き付は電極２を形成して温度・湿度検知
素子を構成する。Further, a RuO2-based electrode paste is applied to the sintered body 1 and baked at 800°C to form an electrode 2 to form a temperature/humidity sensing element.
前記電極材料としては、ＲｕＯ２系以外にＡｇ ｔＮｉ
？ Ｚｎ ｔ Ｃｒ 、 Ｐ ｄ ｔ Ａｕ ＠ Ｐ
ｔ Ｉ Ｓ ｎ Ｉ Ｃｕ ｔＡＩ 、 Ｉｎ を電極
ペースト焼付法、溶射法、蒸着法などで塗布しても同様
の効果が得られる。In addition to RuO2, Ag tNi is used as the electrode material.
? ZntCr, PdtAu@P
Similar effects can be obtained by applying t I S n I Cut AI , In by an electrode paste baking method, thermal spraying method, vapor deposition method, or the like.
このような方法で酸化ニッケル、酸化亜鉛、酸化インジ
ウムを主成分とした金属酸化物釦よび半導体などからな
る電極についても形成することができる。By this method, metal oxide buttons mainly composed of nickel oxide, zinc oxide, and indium oxide, and electrodes made of semiconductors can also be formed.
前記構成を有する温度・湿度検知素子の特性について、
実験結果に基づき以下に説明する。Regarding the characteristics of the temperature/humidity sensing element having the above configuration,
This will be explained below based on the experimental results.
第２図に示すグラフは、温度２０℃にあ−いて両電極２
，２間に１０Ｈｚ−ＩＶの低周波電源を印加した場合の
、前記温度・湿度検知素子の相対湿度変化に伴なう電気
インピーダンスの変化を示すもので、湿度が上昇するに
つれて電気インピーダンスが減少していることがわかる
。The graph shown in Figure 2 shows that both electrodes 2 at a temperature of 20°C
, 2 shows the change in electrical impedance of the temperature/humidity sensing element as the relative humidity changes when a 10Hz-IV low frequency power source is applied between the two, and the electrical impedance decreases as the humidity increases. It can be seen that
また、同一印加電源の条件のもとに温度８０℃において
行なった前記特性の実験では、温度の相違による影響は
ほとんど受けないことが判明し、この結果、この温度・
湿度検知素子は、低周波電源を印加した条件のもとでは
電気インピーダンスの変化は湿度にのみ依存すること
が判明した。Furthermore, in an experiment on the above characteristics conducted at a temperature of 80°C under the same applied power supply conditions, it was found that there was almost no effect due to temperature differences;
It was found that the change in electrical impedance of the humidity sensing element depends only on humidity when a low-frequency power source is applied.
第３図に示すグラフは、湿度５０％ＲＨ（１〜９５℃）
に釦いて両電極２，２間に１０００ＫＨｚ−ＩＶＯ高周
波電源を印加した場合の、温度変化伴なう温度・湿度検
知素子の電気インピーダンスの変化を示すもので、温度
変化に対応してその電気インピーダンスが変化している
ことがわかる。The graph shown in Figure 3 shows the humidity at 50% RH (1 to 95°C).
This shows the change in the electrical impedance of the temperature/humidity sensing element as the temperature changes when a 1000 KHz-IVO high frequency power source is applied between the two electrodes 2 and 2. It can be seen that the is changing.
渣た、同一印加電源の条件のもとに相対湿度を１０％、
９９％とした場合にも、前記特性にほとんど変化はない
ことが判明した。The relative humidity was 10% under the same applied power condition.
It was found that even when the ratio was set to 99%, there was almost no change in the above characteristics.
第４図に示すグラフは、湿度をパラメータとした場合の
温度２０℃にトける周波数−電気インピーダンス特性で
あり、Ａは湿度２０多ＲＨ，Ｂは湿度４０％ＲＨ１Ｃは
湿度６０俤ＲＨＸＤは湿度８０多ＲＨの場合の特性であ
るが、高域周波数においては湿度変化の影響をまったく
受けていないことがわかる。The graph shown in Figure 4 shows the frequency-electrical impedance characteristics at a temperature of 20°C when humidity is used as a parameter. Although this is a characteristic in the case of multiple RH, it can be seen that high frequencies are not affected by humidity changes at all.
以上の実験結果から、この温度・湿度検知素子は、低周
波電源印加条件のもとではその電気インピーダンスの変
化が湿度に依存し、高周波電源印加条件のもとではその
電気インピーダンスの変化が温度に依存する特性を有す
ることがわかる。From the above experimental results, it is clear that the change in electrical impedance of this temperature/humidity sensing element depends on humidity under low frequency power supply conditions, and that the change in electrical impedance depends on temperature under high frequency power supply conditions. It can be seen that it has dependent properties.
この温度・湿度検知素子の構成は前記ＰｂＨｆＯ３の成
分のものに限られるも（７）Ｔｌｍ＜、ぴ起ＢａＴｉＯ
３゜５ｒＴｉ０３．ＰｂＴｉＯ３，ＣａＴｉＯ３，Ｐｂ
ＺｒＯ３゜ＫＮｂＯ３、ＮａＮｂＯ３、ＬｉＮｂＯ３、
ＬｉＴａ０３ｔＰ ｂ （Ｍｇ １／３Ｎｂ ２ ／ｓ
） ０３”−よびその他のペロプスカイトタイプ、タ
ングステンブロンズタイプ、・ζイロクロアタイプ、ス
ピネルタイプさらには金属酸化物などの化合物を１種才
たは複数種加えても、応答性が早く、特性劣化の極めて
ずくない高感度でしかも温度と湿度検出時の温度および
湿度の分離がすぐれた素子を得ることができる。The structure of this temperature/humidity sensing element is limited to the above-mentioned PbHfO3 component.
3°5rTi03. PbTiO3, CaTiO3, Pb
ZrO3゜KNbO3, NaNbO3, LiNbO3,
LiTa03tP b (Mg 1/3Nb 2 /s
) 03"- and other perovskite types, tungsten bronze types, ζirochlore types, spinel types, and even when one or more compounds such as metal oxides are added, the response is quick and the characteristics do not deteriorate. It is possible to obtain an element that has extremely low sensitivity and excellent separation of temperature and humidity when detecting temperature and humidity.
ｌた、さらにはそれ以外の添加物を加えることによっで
ある限られた湿度あるいは温度検知範囲内で、高感度と
なるようその特性を制御することもできる。Furthermore, by adding other additives, the characteristics can be controlled to achieve high sensitivity within a limited humidity or temperature sensing range.
また、この温度・湿度検知素子は耐熱性に優れた性質を
も有して耘す、大気中の浮遊物質によってこの素子が汚
染した場合でも、加熱クリーニングを行なってもとの状
態に戻すこともできる。Additionally, this temperature/humidity sensing element also has excellent heat resistance; even if the element becomes contaminated with airborne particles, it can be returned to its original state by heating and cleaning. can.
なチ・、この素子の寸法、形状むよび構造については、
前記の例のものに限定されるものではなく、種々の寸法
、形状のものが可能である。Regarding the dimensions, shape and structure of this element,
It is not limited to the above example, and various sizes and shapes are possible.
第５図は、前記温度・湿度検知素子を用いた温度・湿度
検知装置の一実施例を示し、６０Ｈｚ１■のオシレータ
ｏｓｃ−ｉと５００ＫＨｚ−１■のオシレータ０８Ｃ−
２を並列に構成するとともに、切換スイッチＳＷによっ
て前記各オシレータ０８Ｃ−１，０８Ｃ−２に切換接続
できるようにした電源に対し、前記温度・湿度検知素子
Ｓと抵抗器（１０にΩ）Ｒ８を直列に接続して構成する
。FIG. 5 shows an embodiment of a temperature/humidity detection device using the temperature/humidity detection element described above, in which a 60Hz 1■ oscillator osc-i and a 500KHz-1■ oscillator 08C- are used.
2 in parallel, and the temperature/humidity sensing element S and resistor R8 (10Ω to Configure by connecting in series.
このように構成したことにより、たとえば、切換スイッ
チＳＷをａ側に倒すと、オシレータ０８Ｃ−１に接続さ
れ、抵抗益鳥 に湿度変化に応じた出力信号が得られ、
渣た切換スイッチＳＷをｂ側に倒すと、オシレータ０８
Ｃ−２に接続され、抵抗器Ｒ８に温度変化に応じた出力
信号が得られる。With this configuration, for example, when the changeover switch SW is turned to the a side, it is connected to the oscillator 08C-1, and an output signal corresponding to the humidity change is obtained at the resistor.
When the leftover switch SW is turned to the b side, the oscillator 08
C-2, and an output signal corresponding to temperature change is obtained from resistor R8.
なフ−１この実施例の構成によるときは、温度Ｏ℃〜１
５０℃、湿度１０係ＲＨ〜１００嶺ＲＨの範囲に亘る検
知が可能である。F-1 When the configuration of this embodiment is used, the temperature is 0°C to 1°C.
Detection is possible at 50° C. and humidity in the range of 10 RH to 100 RH.
以上のように、この温度・湿度検知装置によれば、温度
と湿度の検出を１つの回路構成によって行なうことがで
き、空調管理、気象、食品工業、医化学関係などの分野
にち−ける温度・湿度制御のための装置の構成が簡略化
でき、装置コストの低減化を果たすことができる。As described above, according to this temperature/humidity detection device, temperature and humidity can be detected using one circuit configuration, and temperature and humidity can be detected in the fields of air conditioning management, meteorology, food industry, medical chemistry, etc. - The structure of the device for humidity control can be simplified and the cost of the device can be reduced.
第１図はこの発明の一実施例で用いられる温度・湿度検
知素子の一例を示す斜視図、第２図は温度・湿度検知素
子の湿度対インピーダンス特性を示す図、第３図は温度
・湿度検知素子の温度対インピーダンス特性を示す図、
第４図は温度、湿度検知素子の周波数対インピーダンス
特性を示す図、第５図は温度・湿度検知装置の一実施例
を示す回路図である。
１・・・焼結体（酸化物磁器）、２・・・電極、０８Ｃ
−１，０８Ｃ−２・・・オシレータ、ＳＷ・・・切換ス
イッチ、Ｓ・・・温度・湿度検知素子、Ｒ８・・・抵抗
器。Fig. 1 is a perspective view showing an example of a temperature/humidity sensing element used in an embodiment of the present invention, Fig. 2 is a diagram showing humidity versus impedance characteristics of the temperature/humidity sensing element, and Fig. 3 is a diagram showing temperature/humidity sensing elements. A diagram showing the temperature vs. impedance characteristics of the sensing element,
FIG. 4 is a diagram showing the frequency vs. impedance characteristics of the temperature/humidity sensing element, and FIG. 5 is a circuit diagram showing one embodiment of the temperature/humidity sensing device. 1... Sintered body (oxide porcelain), 2... Electrode, 08C
-1,08C-2...Oscillator, SW...Changing switch, S...Temperature/humidity detection element, R8...Resistor.
Claims (1)
面を設けた温度・湿度検知素子と、周波数を選択的に変
更できる電源回路とを接続したことを特徴とする温度・
湿度検知装置。1. A temperature/humidity sensor characterized by connecting a temperature/humidity sensing element having an electrode surface on oxide porcelain whose main component is PbHfO3 and a power supply circuit that can selectively change the frequency.
Humidity detection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54072557A JPS5839372B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54072557A JPS5839372B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55165511A JPS55165511A (en) | 1980-12-24 |
| JPS5839372B2 true JPS5839372B2 (en) | 1983-08-30 |
Family
ID=13492766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54072557A Expired JPS5839372B2 (en) | 1979-06-09 | 1979-06-09 | Temperature/humidity detection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839372B2 (en) |
-
1979
- 1979-06-09 JP JP54072557A patent/JPS5839372B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55165511A (en) | 1980-12-24 |
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