JPS6018123B2 - resistive thin film - Google Patents
resistive thin filmInfo
- Publication number
- JPS6018123B2 JPS6018123B2 JP55080578A JP8057880A JPS6018123B2 JP S6018123 B2 JPS6018123 B2 JP S6018123B2 JP 55080578 A JP55080578 A JP 55080578A JP 8057880 A JP8057880 A JP 8057880A JP S6018123 B2 JPS6018123 B2 JP S6018123B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- thin film
- resistive thin
- temperature coefficient
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000011651 chromium Substances 0.000 description 8
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910019819 Cr—Si Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 210000000481 breast Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- -1 nickel-chromium aluminum Chemical compound 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明は、電子部品として使用される抵抗薄膜に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resistive thin film used as an electronic component.
この種抵抗薄膜として具備すべき好ましい特性としては
、面積抵抗が比較的大きいこと、安定性すなわち抵抗値
の経時変化が小さいこと、抵抗温度係数が小さいこと、
また抵抗温度係数の経時変化が小さいこと、電流雑音が
小さいこと、非直線性（第３高調波）が大きいこと等の
種々にわたる特性が要求される。The desirable characteristics that this type of resistive thin film should have include a relatively large sheet resistance, stability, that is, small change in resistance value over time, and a small temperature coefficient of resistance.
Further, various characteristics are required, such as a small change over time in the temperature coefficient of resistance, a small current noise, and a large nonlinearity (third harmonic).
さらに、近年はこの抵抗温度係数に対して中心値が０〜
２戟伽′℃といった小さいものの要求が市場からも強ま
ってきている。本発明はこれらの特性を満足し、かつ安
価にして安定的に抵抗薄膜を提供することを目的とする
。従釆、抵抗薄膜はスパッタリングや電子ビーム蒸着、
抵抗加熱蒸着等により、基体上に被着することにより作
られている。Furthermore, in recent years, the center value of this resistance temperature coefficient has become 0~
Demand for smaller products such as 2Ga'°C is increasing from the market. It is an object of the present invention to provide a stable resistive thin film that satisfies these characteristics and is inexpensive. Accordingly, resistive thin films can be made by sputtering, electron beam evaporation,
It is made by depositing it on a substrate by resistance heating vapor deposition or the like.
そして、薄膜材料としては、窒化タンタル（ＴａＮ），
窒化チタン（ＴＩＮ）やニッケルークローム（Ｎｉ−Ｃ
ｒ）合金、ニッケルークロームーアルミニウム（Ｎｉ一
Ｃｒ−Ｎ）合金、ニッケルークロームーシリコン（Ｎｉ
−Ｃｒ−Ｓｉ）合金等が実用化されている。しかし、Ｔ
ＩＮやＴａＮは徴量のＮ２ガスを導入する反応性着膜を
必要とするため、制御が難かしく、再現性が得にくい。
また、Ｎｉ−Ｃｒは比抵抗が高く、その酸化皮膜は繊密
で耐熱性，耐薬品性とも優れてはいるが、その抵抗温度
係数は１００〜１５■柳／ｑＣと大きい。さらに、Ｎｉ
−Ｃｒ−ＡＩ，Ｎｉ−Ｃｒ−Ｓｉは繊密で耐熱性，耐薬
品性に富み、抵抗温度係数も小さいが、虹もしくはＳｉ
量が最適条件から少しでも外れると抵抗温度係数は大き
くなるため、ＡＩもしくはＳｉの微妙な量の加減が必要
であり、小さい抵抗温度係数の抵抗薄膜を安定に継続し
て作るには高度の製造技術が必要である。本発明は上記
のような点に鑑みてなされたものであり、以下その実施
例について詳細に説明する。The thin film materials include tantalum nitride (TaN),
Titanium nitride (TIN) and nickel-chrome (Ni-C)
r) alloy, nickel-chromium aluminum (Ni-Cr-N) alloy, nickel-chromium silicon (Ni
-Cr-Si) alloys have been put into practical use. However, T
Since IN and TaN require reactive film deposition in which a certain amount of N2 gas is introduced, control is difficult and reproducibility is difficult to obtain.
Further, although Ni--Cr has a high specific resistance and its oxide film is delicate and has excellent heat resistance and chemical resistance, its temperature coefficient of resistance is as large as 100 to 15 yanagi/qC. Furthermore, Ni
-Cr-AI, Ni-Cr-Si are delicate, have high heat resistance and chemical resistance, and have a small resistance temperature coefficient, but rainbow or Si
If the amount deviates even slightly from the optimum condition, the temperature coefficient of resistance increases, so it is necessary to delicately adjust the amount of AI or Si, and in order to stably and continuously produce a resistive thin film with a small temperature coefficient of resistance, advanced manufacturing is required. Technology is required. The present invention has been made in view of the above points, and embodiments thereof will be described in detail below.
まず、アルミナ円柱形の基体にＤＣマグネトロンスパツ
タリング法により合金ターゲットからニッケル（Ｎｉ）
，クローム（Ｃｒ），シリコン（Ｓｉ），ランタン（Ｌ
ａ）をスパッタリングして着膜させた。First, nickel (Ni) was deposited on an alumina cylindrical base from an alloy target using the DC magnetron sputtering method.
, chromium (Cr), silicon (Si), lanthanum (L
a) was deposited into a film by sputtering.
この時の各成分の比率は下記の表１に示す通りである。
ついで、着膜された基体を加熱炉に入れ、空気中で４０
０℃、１時間の加熱処理を行った。こうして得られた肴
膜済基体の両端にリード線付キャップをかしめっけし、
試料とした。この試料の抵抗温度係数、比抵抗を各１の
固の平均値で調べた結果を下記の表２に示す。また、表
２には参考としてニッケル，クロームを用い、上記と同
一条件で作成した試料の特性値を併せて示している。な
お、抵抗温度係数は十２５℃、十７５℃の２点間で測定
したｏ＜表 １＞
＜表 ２＞
（注）成分比はＮｉ−○ｒ（８０：２０）Ｋ対する添加
成分比を示す。The ratio of each component at this time is as shown in Table 1 below.
Next, the film-coated substrate was placed in a heating furnace and heated in air for 40 minutes.
Heat treatment was performed at 0° C. for 1 hour. Caps with lead wires are caulked on both ends of the thus obtained coated base,
It was used as a sample. The temperature coefficient of resistance and specific resistance of this sample were investigated using the average values of each 1, and the results are shown in Table 2 below. Table 2 also shows the characteristic values of samples prepared under the same conditions as above using nickel and chromium as a reference. The temperature coefficient of resistance was measured between two points at 125℃ and 175℃. show.
上記の表のように本発明による実施例１〜３と参考例と
では、抵抗温度係数が著しく異なる。As shown in the table above, Examples 1 to 3 according to the present invention and the reference example have significantly different temperature coefficients of resistance.
また、従来より抵抗薄膜として使用されているＮｉ−Ｃ
ｒ−Ｍの場合、ＡＩの比率を０．７〜６程度変えた時、
抵抗温度係数は２０〜３０胸／℃程度変動する。これに
対して、ニッケル，クローム，シリコンおよびランタン
よりなる抵抗薄膜は抵抗温度係数が小さく、また一部の
成分の比率が変わってもその抵抗温度係数の値は安定し
ているため、製造時に別妙な加減をしないで、比較的楽
に所望の高抵抗の抵抗薄膜を得ることができる。また、
電流雑音は完成抵抗値２０雌Ｑで０．０４ムＶ′Ｖ程度
、第３高調波指数は同２０皿Ｑで１３Ｍ母陣度と良い特
性を示した。さらに、温度１２５℃で定格電力（例１／
４Ｗ）を１．球時間印加し、３０分切るということを繰
り返す負荷寿命試験を行ったところ、図に示すような結
果を得た。それぞれ本発明品（Ｎｉ：Ｃｒ：Ｓｉ：い＝
８０：２０：３：０．７）による特性ａ、従来品（Ｎｉ
：Ｃｒ：ＡＩ＝８０：２０：３）による特性ｂ、同じく
従来品（Ｎｉ：Ｃｒ＝８０：２０）による特性ｃを比較
したものである。図より２００加持間の加速試験を経て
本発明の抵抗薄膜が長期使用状態において安定であり、
寿命的にも効果のあることが綴る。以上のように本発明
の抵抗薄膜は、各種の特性において良好な値を示し、か
つ安価にして安定的に製作することができ、その産業性
は大なるものである。In addition, Ni-C, which has been conventionally used as a resistive thin film,
In the case of r-M, when the AI ratio is changed by about 0.7 to 6,
The temperature coefficient of resistance varies by about 20 to 30 breasts/°C. On the other hand, resistive thin films made of nickel, chromium, silicon, and lanthanum have a small temperature coefficient of resistance, and even if the ratio of some components changes, the value of the temperature coefficient of resistance remains stable. A resistive thin film with a desired high resistance can be obtained relatively easily without making any strange adjustments. Also,
The current noise was approximately 0.04 μV'V with the completed resistance value of 20 female Q, and the third harmonic index was 13 M squared with the same 20 female Q, showing good characteristics. Furthermore, the rated power (Example 1/
4W) to 1. A load life test was conducted in which the load was applied repeatedly for 30 minutes, and the results shown in the figure were obtained. The products of the present invention (Ni:Cr:Si:I =
Characteristic a due to 80:20:3:0.7), conventional product (Ni
:Cr:AI=80:20:3) and characteristic c of the same conventional product (Ni:Cr=80:20). The figure shows that the resistive thin film of the present invention is stable in long-term use after undergoing an accelerated test of 200 cycles.
It is also said to be effective in terms of longevity. As described above, the resistive thin film of the present invention exhibits good values in various properties, can be manufactured stably at low cost, and has great industrial efficiency.
図は本発明品と従来品による負荷寿命試験結果を比較し
て示す図である。The figure is a diagram showing a comparison of the results of a load life test between a product of the present invention and a conventional product.
Claims (1)
なることを特徴とする抵抗薄膜。1. A resistive thin film characterized by being made of nickel, chrome, silicon, and lanthanum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55080578A JPS6018123B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55080578A JPS6018123B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS575303A JPS575303A (en) | 1982-01-12 |
| JPS6018123B2 true JPS6018123B2 (en) | 1985-05-09 |
Family
ID=13722218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55080578A Expired JPS6018123B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6018123B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03295104A (en) * | 1990-04-13 | 1991-12-26 | Kimmon Electric Co Ltd | Line of sight guide light |
-
1980
- 1980-06-13 JP JP55080578A patent/JPS6018123B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03295104A (en) * | 1990-04-13 | 1991-12-26 | Kimmon Electric Co Ltd | Line of sight guide light |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS575303A (en) | 1982-01-12 |
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