JPS6018124B2 - resistive thin film - Google Patents
resistive thin filmInfo
- Publication number
- JPS6018124B2 JPS6018124B2 JP55080579A JP8057980A JPS6018124B2 JP S6018124 B2 JPS6018124 B2 JP S6018124B2 JP 55080579 A JP55080579 A JP 55080579A JP 8057980 A JP8057980 A JP 8057980A JP S6018124 B2 JPS6018124 B2 JP S6018124B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- thin film
- resistive thin
- temperature coefficient
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 description 7
- 229910018487 Ni—Cr Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910019819 Cr—Si Inorganic materials 0.000 description 1
- GZWXHPJXQLOTPB-UHFFFAOYSA-N [Si].[Ni].[Cr] Chemical compound [Si].[Ni].[Cr] GZWXHPJXQLOTPB-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明は、電子部品として使用される抵抗薄膜に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resistive thin film used as an electronic component.
この種抵抗薄膜として具備すべき好ましい特性としては
、面積抵抗が比較的大きいこと、安定性すなわち抵抗値
の経時変化が小さいこと、抵抗温度係が小さいこと、ま
た抵抗温度係数の経時変化が小さいこと、電流雑音が小
さいこと、非直線性（第３高調波）が大きいこと等の種
々にわたる特性が要求される。The desirable characteristics that this type of resistive thin film should have are a relatively large sheet resistance, stability, that is, small change in resistance value over time, a small resistance temperature coefficient, and a small change in resistance temperature coefficient over time. , low current noise, high nonlinearity (third harmonic), and other various characteristics are required.
さらに、近年はこの抵抗温度係数に対して中心値が０〜
２勃肌′℃といった小さいものの要求が市場からも強ま
ってきている。本発明はこれらの特性を満足し、かつ安
価にして安定的に抵抗薄膜を提供することを目的とする
。従来、抵抗薄膜はスパッタリングや電子ビーム黍着，
抵抗加熱蒸着により、基体上に被着することにより作ら
れている。Furthermore, in recent years, the center value of this resistance temperature coefficient has become 0~
Demand for small products such as 2°C is increasing from the market. It is an object of the present invention to provide a stable resistive thin film that satisfies these characteristics and is inexpensive. Conventionally, resistive thin films have been produced by sputtering, electron beam deposition,
It is made by depositing it on a substrate by resistive heating vapor deposition.
そして、薄膜材料としては、窒化タンタル（ＴａＮ）、
窒化チタン（ＴＩＮ）やニッケル−クローム（Ｎｉ−Ｃ
ｒ）合金、ニッケルークロームーアルミニウム（Ｎｉ−
Ｃｒ−Ａそ）合金、ニッケルークローム−シリコン（Ｎ
ｉ−Ｃｒ−Ｓｉ）合金等が実用化されている。しかし、
ＴＩＮやＴａＮは徴量のＮ２ガスを導入する反応性着膜
を必要とするため、制御が簸かしく、再現性が得にくし
、。また、Ｎｉ−Ｃｒは比抵抗が高く、その酸化皮膜は
繊密で耐熱性，耐薬品性とも優れてはいるが、この抵抗
温度係数は１００〜１５０脚／ｑＣと大きい。さらに、
Ｎｉ−Ｃｒ一ＡＺ、Ｎｉ‐Ｃ【一Ｓｉは繊密で耐熱性，
耐薬品性に富み、抵抗温度係数も小さいが、Ａそもしく
はＳｉ量が最適条件から少しでも外れると抵抗温度係数
は大きくなるため、ＡそもしくはＳｉの微妙な量の加減
が必要であり、小さい抵抗温度係数の抵抗薄膜を安定に
継続して作るには高度の製造技術が必要である。本発明
は上記のような点に鑑みてなされたものであり、以下そ
の実施例について詳細に説明する。The thin film materials include tantalum nitride (TaN),
Titanium nitride (TIN) and nickel-chromium (Ni-C)
r) Alloy, nickel-chrome aluminum (Ni-
Cr-A) alloy, nickel-chromium-silicon (N
i-Cr-Si) alloys and the like have been put into practical use. but,
Since TIN and TaN require reactive deposition by introducing a certain amount of N2 gas, control is difficult and reproducibility is difficult. Further, although Ni-Cr has a high specific resistance and its oxide film is dense and has excellent heat resistance and chemical resistance, the temperature coefficient of resistance is as large as 100 to 150 legs/qC. moreover,
Ni-Cr-AZ, Ni-C [-Si is delicate and heat resistant,
It is highly chemical resistant and has a small temperature coefficient of resistance, but if the amount of A or Si deviates even slightly from the optimum conditions, the temperature coefficient of resistance increases, so it is necessary to delicately adjust the amount of A or Si. Advanced manufacturing technology is required to stably and continuously produce resistive thin films with a high temperature coefficient of resistance. The present invention has been made in view of the above points, and embodiments thereof will be described in detail below.
まず、アルミナ円柱形の基体にＤＣマグネトロンスパツ
タリング法により合金ターゲットからニッケル（Ｎｉ）
、クローム（Ｃｒ）、アルミニウム（Ａそ）、ランタン
（Ｙ）をスパッタリングして着膜させた。First, nickel (Ni) was deposited on an alumina cylindrical base from an alloy target using the DC magnetron sputtering method.
, chromium (Cr), aluminum (A), and lanthanum (Y) were deposited by sputtering.
この時の各成分の比率は下記の表１に示す通りである。
ついで、着膜ごせた基体を加熱炉に入れ、空気中で４０
０℃、１時間の加熱処理を行った。こうして得られた着
膜済基体の両端にリード線付キャップをかしめっけし、
試料とした。この試料の抵抗温度係数、比抵抗を各１の
固の平均値で調べた結果を下記の表２に示す。また、表
２には参考としてニッケル，クロームを用い、上記と同
一条件で作成した試料の特性値を併せて示している。な
お、抵抗温度係数は十２５ｑ０、十７５００の２点間で
測定した。＜表 １＞
＜表 ２＞
Ｇ注）成分比はＮｉ−○ｒ（８０：２０）に対する添加
成分比を示す。The ratio of each component at this time is as shown in Table 1 below.
Next, the substrate with the coated film was placed in a heating furnace and heated in air for 40 minutes.
Heat treatment was performed at 0°C for 1 hour. Caps with lead wires are caulked onto both ends of the film-coated substrate obtained in this way,
It was used as a sample. The temperature coefficient of resistance and specific resistance of this sample were investigated using the average values of each 1, and the results are shown in Table 2 below. Table 2 also shows the characteristic values of samples prepared under the same conditions as above using nickel and chromium as a reference. The temperature coefficient of resistance was measured between two points, 125q0 and 17500. <Table 1><Table2> G Note) Component ratio indicates the ratio of added components to Ni-○r (80:20).
上記の表のように本発明による実施例１〜４と参考例と
では、抵抗温度係数が著しく異なる。As shown in the table above, Examples 1 to 4 according to the present invention and the reference example have significantly different temperature coefficients of resistance.
また、ランタンを除いたＮｉ−Ｃｒ−Ａその場合、Ａそ
の比率を０．７〜６程度変えた時、抵抗温度係数は２０
〜３倣ｐ／。Ｃ程度変動する。このようにニッケル，ク
ローム，アルミニウムおよびランタンよりなる抵抗薄膜
は抵抗温度係数が小さく、また一部の成分の比率が変わ
ってもその抵抗温度係数の値は安定しているため、製造
時に比率の微妙な加減をしないで、比較的楽に所望の抵
抗薄膜を得ることができる。In addition, in the case of Ni-Cr-A excluding lanthanum, when the ratio of A is changed by about 0.7 to 6, the temperature coefficient of resistance is 20
~3 imitation p/. It fluctuates by about C. In this way, resistive thin films made of nickel, chromium, aluminum, and lanthanum have a small resistance temperature coefficient, and even if the ratio of some components changes, the value of the resistance temperature coefficient remains stable. A desired resistive thin film can be obtained relatively easily without making any adjustments.
また、電流雑音は完成抵抗値１０皿○で０．０４〃Ｖ′
Ｖ程度、第３高調波指数は同１０血○で１３のＢ程度と
良い特性を示した。さらに、温度１２５℃で定格電力（
例１／４Ｗ）を１．虫時間印加し、３０分切るというこ
とを繰り返す負荷寿命試験を行ったところ、図に示すよ
うな結果を得た。それぞれ本発明品（Ｎｉ：Ｃｒ：ＡＺ
：Ｌａ＝８０：２０：３：０．７）による特性ａ、従来
品（Ｎｉ：Ｃｒ：Ａ夕＝８０：２０：３）による特性ｂ
、同じく従来品（Ｎｉ：Ｃｒ＝８０：２０）による特性
ｃを比較したものである。図より２００ｑ時間の加速試
験を経て本発明の抵抗薄膜が長期使用状態においても安
定であり、寿命的にも効果のあることが鱗る。０ 以上
のように本発明の抵抗薄膜は、各種の特性において良好
な値を示し、かつ安価にして安定的に製作することがで
き、その産業性は大なるものである。In addition, the current noise is 0.04 V' with a completed resistance value of 10 plates.
The third harmonic index was 10 blood and 13 B, showing good characteristics. Furthermore, the rated power (
Example 1/4W) 1. When a load life test was conducted in which the load was applied repeatedly for 30 minutes and then turned off for 30 minutes, the results shown in the figure were obtained. Each of the products of the present invention (Ni:Cr:AZ
:La=80:20:3:0.7), characteristic a, and conventional product (Ni:Cr:A=80:20:3), characteristic b.
, which also compares the characteristic c of a conventional product (Ni:Cr=80:20). From the figure, it can be seen that the resistive thin film of the present invention is stable even in long-term use after undergoing an accelerated test of 200 q hours, and is effective in terms of longevity. 0 As described above, the resistive thin film of the present invention exhibits good values in various properties, can be manufactured stably at low cost, and has great industrial efficiency.
ク 図に本発明品と従来品による負荷寿命試験結果を比
較して示す図である。Fig. 3 is a diagram showing a comparison of the load life test results of the product of the present invention and the conventional product.
Claims (1)
からなることを特徴とする抵抗薄膜。1. A resistive thin film characterized by being made of nickel, chrome, aluminum and lanthanum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55080579A JPS6018124B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55080579A JPS6018124B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS575304A JPS575304A (en) | 1982-01-12 |
| JPS6018124B2 true JPS6018124B2 (en) | 1985-05-09 |
Family
ID=13722249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55080579A Expired JPS6018124B2 (en) | 1980-06-13 | 1980-06-13 | resistive thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6018124B2 (en) |
-
1980
- 1980-06-13 JP JP55080579A patent/JPS6018124B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS575304A (en) | 1982-01-12 |
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