JPS6113313B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bubble domain writing device that generates bubble magnetic domains and transfers required write information bubbles to a storage loop, and writes newly created bubble magnetic domains accurately and with simple control. The aim is to realize a device that can do this.

Magnetic bubble memory expresses information "1" and "0" by the presence or absence of bubble magnetic domains, and forms a shift register with a loop-shaped transfer path that sequentially transfers bubble magnetic domains into which bubble magnetic domains are sent. It is stored as information. To transfer a bubble magnetic domain, a permalloy transfer pattern such as a T-bar, Chevron, Y-Y, or half disk is formed on a magnetic thin plate such as magnetic garnet, and the magnetic layer is transferred under a static magnetic field perpendicular to the magnetic thin plate. A rotating magnetic field parallel to the plane of the thin plate is applied to magnetize and transfer the transfer pattern. On the other hand, there are two methods for generating bubble magnetic domains: one is to divide the seed bubble, and the other is to perform nucleation.The present invention uses the latter nucleation type generator to generate bubbles and write them. It is targeted. However, with the nucleation type generator, there is a risk of malfunction due to stray bubbles, which hinders the reliability of information writing.

FIG. 1 shows a conventional nucleation type generator, in which a hairpin-shaped conductor pattern 2 is formed in a bubble magnetic domain transfer path 1 consisting of a modified half-disc pattern 11 made of permalloy or the like. A bubble magnetic domain B ₁ is generated within the conductor loop 2 by flowing a pulse current i synchronized with the direction of the rotating magnetic field H _R to create a locally strong reverse magnetic field. The generated bubble magnetic domain is
B ₂ in the direction of the arrow (to the left in the diagram) due to the rotating magnetic field.
It is transferred as follows. In this way, under the action of the bias magnetic field and the rotating magnetic field H _R ,
The generator current i to the conductor loop 2 is turned “ON” or “OFF” in response to the information “1” or “0”.
By doing so, bubble magnetic domain information is written.

However, in such a nucleation-type bubble domain generation/writing device, malfunctions are likely to occur near the critical values of the operating margin region of the bias magnetic field and generator current. That is, extra unnecessary bubbles are generated in the conductor loop 2, and these bubbles repel each other and enter empty positions in the transfer path, causing write malfunctions. For this reason, the bias magnetic field margin, generator current, and chip temperature margin of the bubble domain information writing device are extremely narrow. FIG. 2 shows the margin of the bias magnetic field H _B with respect to the rotating magnetic field H _R required for the normal operation of the bubble generator, and malfunctions in the generator tend to occur near the lower limit value D. FIG. 3 shows the margin of the generator current value with respect to the magnetic bubble chip temperature. If the chip temperature is to be guaranteed over a wide range, the generator current value is limited as shown by the broken line. In particular, as the temperature rises, the upper limit value decreases extremely, which increases the burden of thermal design such as heat radiation. Therefore, the present applicant has improved the operating characteristics by preventing malfunctions near the critical operating margin in the bubble magnetic domain generation writing device, for example, by increasing the upper limit of the generator current and lowering the lower limit of the bias magnetic field, as shown by the chain line. In order to do this, the generator is dedicated to generating bubble magnetic domains and continuously generates every bit, and between the generator and the write information transfer path, necessary information bubbles and unnecessary bubbles are separated by a gate signal. A bubble magnetic domain generation/writing device configured to transfer unnecessary bubbles to a guardrail and eliminate them has already been disclosed in Japanese Patent Application No. 53-87308 (Japanese Unexamined Patent Publication No. 55-873).
The application has been filed as Publication No. 14565).

FIG. 4 shows an embodiment of a bubble domain generation/writing device previously proposed by the present applicant. Transfer pattern 1
A hairpin pattern 2 for generating bubbles is provided at one end of a transfer path 1 consisting of a row of lines 1, . The other end of the transfer path 1, that is, the tip in the bubble transfer direction, is connected to a guardrail (not shown). In the middle of the transfer path 1, there is a switch circuit 3 such as a transfer gate.
is formed. Reference numeral 31 denotes a hairpin-shaped conductor loop constituting a transfer gate, one end 32 of which overlaps another transfer path 4. The transfer path 4 also consists of a row of transfer patterns 41..., the ends of which are connected to a storage loop, which is an information storage path, via a write information transfer path. For example, in the case of a magier/minor loop configuration, it is connected to the minor loop via the magier loop. transfer gate 3
When a gate pulse signal flows through the transfer path 1, the bubble magnetic domain B ₇ on the pattern 11' moves into the conductor loop 3.
1 and transferred to the transfer path 4.

To explain the operation, in the generator 2, unlike the conventional case, a bubble magnetic domain is generated continuously for each bit, and is sequentially transferred as B ₁ , B ₂ . . . in the figure by a rotating magnetic field. Therefore, up to transfer pattern 11 on transfer gate 3, all patterns 11... have B ₁ ...
Bubble magnetic domain is retained as in B ₇ . When a gate signal flows in the transfer gate 3, the bubble magnetic domain B ₇ on the transfer pattern 11' is transferred to the transfer path 4 on the guardrail side, and transferred as B ₈ and B ₁₀ by the rotating magnetic field, and is stored. sent to the loop. The gate signal is energized only when the necessary bubble magnetic domain serving as write information comes to the transfer gate position.

Therefore, unnecessary bubble magnetic domains are discarded to the guardrail like B ₉ and B ₁₁ , and only necessary information bubble magnetic domains are transferred on the transfer path 4 like B ₈ and B ₁₀ .
The write information is sent to the storage loop via the transfer path.

However, according to this configuration, two timing generation circuits are required to control the timing of generation of bubble magnetic domains and the timing of supply of gate pulse signals, respectively. In other words, after how many cycles of the rotating magnetic field have elapsed, the bubble magnetic domain generated by the generator 2 forms the pattern 1 in which the transfer gate 3 is arranged.
It is necessary to supply a gate pulse signal by monitoring whether it arrives on 1', and this timing is usually controlled by a timing generation circuit using a counter or the like. This means that when starting up the magnetic bubble device in its initial state,
In addition, in the event of an unexpected accident such as a power outage, it is necessary to control which period of the rotating magnetic field should be supplied the gate pulse signal of the transfer gate from the timing of the generation of the bubble magnetic domain. . In particular, in the event of a power outage, etc., various timing circuits are designed to supply current to various functional patterns after 2 to 3 bits of blank feeding are performed to ensure subsequent operation when the power is restored, which prevents the generation of bubble magnetic domains. The timing and gate drive timing must be controlled with a certain correlation, and as a result, two types of timing generation circuits are required. Therefore, not only the number of peripheral circuits for driving increases, but also the control thereof becomes complicated.

The present invention was devised to solve the above-mentioned drawbacks, and its purpose is to realize a novel bubble magnetic domain writing device that has a simple peripheral circuit and is easy to control.

An object of the present invention is to provide a magnetic material pattern having a bubble magnetic domain generating means and a bubble magnetic domain transfer control means, a first transfer path disposed close to the magnetic material pattern and guiding unnecessary bubble magnetic domains to a guardrail, and the magnetic material pattern. a second transfer path disposed adjacent to the bubble magnetic domain for guiding the bubble magnetic domain to the information storage path, and the bubble magnetic domain generating means and the bubble magnetic domain transfer control means are operated within the same rotating magnetic field period. This can be achieved by using a device.

The present invention will be explained below using the drawings.

FIG. 5 shows an embodiment of a bubble domain writing device according to the present invention.

In the figure, 21 is an arc-shaped permalloy pattern, 22 is a hairpin-shaped bubble generation pattern made of gold or the like for bubble magnetic domain generation, 23 is a hairpin-shaped transfer gate pattern also made of gold or the like for controlling bubble magnetic domain transfer, and 24 is a transfer path composed of a set of permalloy patterns for guiding unnecessary bubble magnetic domains to the unillustrated guardrail side, 2
Reference numeral 5 denotes a transfer path composed of a set of permalloy patterns for guiding the bubble magnetic domain constituting the information string to the storage loop side, which is the information storage path. As is clear from the figure, the bubble magnetic domain writing device, which is a feature of the present invention, includes a permalloy pattern 21, a bubble generation pattern 22 formed at a position overlapping a part of the permalloy pattern 21, and other parts of the permalloy pattern 21. It is composed of a transfer gate pattern 23 formed at a position overlapping a part of the region.

Next, the operation will be explained.

The rotating magnetic field H _R energizes the pattern 22 in direction 4, effectively weakening the bias field in the region surrounded by the pattern 22 and creating a new bulb at position B ₁ . The pattern 22 is energized every cycle of the rotating magnetic field, so the bubble is energized every cycle.
Generated at position B ₁ .

Next, when the rotating magnetic field H _R is in direction 1, a current is supplied to the pattern 23 based on the write information sent from the host device connected to the magnetic bubble device. When writing information "0", the pattern 23 is not energized, and therefore the bubble at position B2 with the rotating magnetic field H _R in direction 1 is then moved by the rotating magnetic field H _R , and the bubble at position B ₂ is moved by the rotating magnetic field H _{R .} is transferred to position B ₄ when it transitions to the state of direction 2. Thereafter, the data is sequentially transferred to the storage loop side along the transfer path 24. In addition, when writing information "1", when the rotating magnetic field H _R is in direction 1, that is, when the bubble generated from pattern 22 is at position B ₂ , the area surrounded by pattern 23 is A current is supplied in a direction where the bias magnetic field becomes effectively stronger. Therefore, the bias magnetic field around the pattern 23 is effectively weakened, so that the bubble located at B ₂ is elongated as the rotating magnetic field H _R shifts in direction 2, and the bar pattern forming part of the transfer path 25 is It is attracted to the magnetic pole that occurs at the end of the By stopping the energization to the pattern 23 when the rotating magnetic field H _R is between directions 2 and 3, B ₂
The bubble placed at position B3 is transferred to position _B3 on transfer path 25. Since the bubbles transferred to the transfer path 24 are no longer related to the bubble information string to be written, they are sequentially sent to the guardrail along the transfer path 24 and disappear.

As described above, the bubble information string is written to the storage loop side.

As described above, according to the present invention, the generation of bubbles and the gate control of the generated bubbles are performed within one period of the rotating magnetic field H _R period. There is no need to prepare two timings. Therefore, according to the present invention, writing of information can be completed by preparing one set of timing generators such as counters for timing control and controlling only the phases of the currents applied to these two functional patterns. I can do it. Therefore, the peripheral circuit for timing control is simplified and its control is also greatly simplified.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing the pattern of a conventional magnetic bubble generator, FIG. 2 is a graph showing the margin of the bias magnetic field with respect to the rotating magnetic field, and FIG. 3 is a graph showing the margin of the generator current with respect to the magnetic bubble chip temperature. FIG. 4 is a diagram illustrating the pattern of the improved magnetic bubble information writing device, and FIG.
The figure shows an embodiment of a bubble domain writing device according to the present invention. In the figure, 21 is a permalloy pattern, 22
is the bubble generation pattern, 23 is the gate pattern,
24 and 25 are transfer paths.

Claims (1)

[Claims] 1. A magnetic material pattern having a bubble magnetic domain generation means and a bubble magnetic domain transfer control means, a first transfer path disposed close to the magnetic material pattern and guiding unnecessary bubble magnetic domains to a guardrail, and a first transfer path disposed proximate to the magnetic material pattern and having an information transfer path. A bubble magnetic domain writing device comprising a second transfer path for guiding bubble magnetic domains to an accumulation path, and operating the bubble magnetic domain generating means and the bubble magnetic domain transfer control means within the same rotating magnetic field period.