JPS6136315B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bubble memory device using a bubble memory element that uses the presence or absence of a bubble domain as a single domain wall domain as information.

Bubble memory devices are produced in bulk as bubble chips using integrated circuit technology, but the reality is that the price of bubble chips has not decreased because the yield of defect-free bubble chips has been slow to improve. Therefore, if bubble chips containing defects can be used,
A low-cost bubble memory can be realized. When a defective chip is used for such a purpose, since the bubble memory is a non-volatile memory, it is desirable to also store information regarding the defect location (hereinafter referred to as defect information) in the non-volatile memory. Conventionally, in line with this purpose, it has been proposed to store defect information in the bubble chip itself within the bubble memory.

For details of this proposal, see, for example,
42246 and page 40 of the magazine "Electronics" published on August 17, 1978. However, in the bubble memory proposed by these proposals, if the voltage value of the DC power supply supplied to the bubble memory cannot maintain the specified value due to an abnormality in the AC power supply or DC power supply, the operation of the direct peripheral circuits will become abnormal. The drawback is that the defect information in the bubble chip is destroyed.

If such an accident occurs in a bubble memory, even if the defective information is not destroyed, the bubble domain will enter a defective loop that should not exist and interfere with normal operation. It was hot. In this case, normal operation of the bubble memory was restored by a clearing operation that cleared all bubble domains in the bubble chip. However, by performing the clearing operation, it is inevitable that the defect information will also be destroyed.

Therefore, even if defect information is stored in the chip itself, it is necessary to record and save the defect information on another medium and rewrite the defect information as necessary, making it difficult to manufacture bubble memories. This made time management and maintenance during use difficult.

An object of the present invention is to prevent specific information such as defect information stored in a bubble memory element from being destroyed even if a memory using a bubble memory element encounters a power failure or clearing operation. The purpose of the present invention is to provide a bubble memory device with no bubble memory device.

Next, the present invention will be explained with reference to the drawings. FIG. 1 shows a schematic diagram of a bubble memory element used in the bubble memory device of the present invention.

In addition to the functional elements of the conventionally proposed two-major line/minor loop type chip configuration, the bubble chip as a bubble memory element includes a holding means for holding a bubble domain pattern and a holding means for holding the bubble domain pattern. and transfer means for transferring the bubble domain pattern between the bubble domain movement paths.

namely, minor loops 10-1 to 10-n storing information, a write mager line 12 with a generator 11, and a detector 1.
Readout mager line 14 with 3
and write gates 15-1 to 15 for transferring the bubble domain from the write mager line 12 to each minor loop 10-1 to 10-n.
-n and each minor loop 10-1 to 10-n
The portion consisting of readout gates 16-1 to 16-n for transferring the bubble domain as it is or copying it to the mager line 14 is a portion existing in a conventional bubble memory element. It is.

The bubble memory element further includes a bubble domain movement path 121 extending from the write Mager line 12, a bubble domain movement path 141 that joins the read Mager line 14 near the detector 13, and a minor domain movement path 121. n equal to the number of loops
gates 17-1 to 17-n for transferring the bubble domain pattern from the bubble domain movement paths 121 to the holding means 18; Forward. That is, the gate 19 for transferring as is or copying and transferring.
-1 to 19-2 are provided.

In the bubble memory device, even if the power supply to the bubble memory device is malfunctioning and the regular rotating magnetic field is no longer applied, the bubbles existing in the holding means 18 will be removed from the main holding stage 1 when the regular rotating magnetic field is applied again.
It now occupies the regular position of number 8. If the holding main stage 18 is configured such that the extinguishing magnetic field of the bubble domain existing in the holding means 18 is larger than the value in other parts, then the holding means 1
The bubbles present at 8 are not destroyed by the clearing operation.

Next, a more detailed explanation of the bubble domain holding means 18 and the transfer means between the bubble domain holding means 18 and the bubble domain movement paths 121 and 141 will be explained based on an embodiment. In addition,
In the following examples, magnetic thin plates such as a magnetic garnet single crystal thin plate on a non-magnetic garnet substrate and an amorphous magnetic thin plate on a glass substrate, which can hold bubble domains by applying a bias magnetic field, are shown in the drawings. omitted for brevity.

In FIG. 2, the bubble domain pattern as defect information that has moved through the idler-type bubble domain movement path 121 is transferred to the idler section 22 by passing a current through the conductor 21. In FIG. Here, an example is shown in which the idler section 22 is composed of four soft magnetic patterns.

When it is desired to read defect information, a transfer current is applied to the conductor 23 and the bubble domain movement path 141 is
Move the bubble domain to . Since the example shown in this figure does not include a replicator, it is necessary to return the defect information to the movement path 121 and retain it again. Even if the amplitude and phase of the rotating magnetic field are distorted, a bubble domain exists at one end of the four rods that make up the idler section 21.
If a regular rotating magnetic field is applied again, the bubble domain will be normally held in the idler 22 section. Note that the conductor 23 may constitute a transfer means that performs the operations of replicating and transferring out.

FIG. 3 shows an idler type bubble domain holding means and transfer means. The difference from the one in FIG. 2 is that a conductor 34 is provided. Therefore, only the defect information retention characteristic during the clearing operation is different from that in FIG. That is, when it is necessary to clear the bubble memory element, a holding current is applied to the conductor 34 to make the bubble domain extinguishing magnetic field in the idler part larger than in other parts, and then the bias magnetic field is increased to clear the bubble domain. Do this. The defect information of the idler section remains intact without being destroyed.

FIG. 4 shows an embodiment in which a large-area soft magnetic pattern formed on the surface of a magnetic thin plate is used as the bubble domain holding means. In this figure, there are three minor
Three bubble domain holders are shown corresponding to the loops. A circular bubble domain holding soft magnetic pattern (holding pattern) 42 having a larger area than the soft magnetic pattern (moving pattern) of the bubble domain moving path is arranged in each holding portion. When a bubble domain exists in the holding pattern 42, it is in a more stable state energetically, and even if a magnetic field is applied that would cause bubble domains in other moving patterns to disappear, the bubble domain will not be attracted to this holding pattern 42. Therefore, even if a clear operation is performed, the minor loop defect information can continue to be stored.

Defect information moves through the bubble domain movement path 121. When the bubble domain pattern according to the defect information corresponding to each minor loop reaches the vicinity of the bubble domain holding part, a current I _T 44 flows through the conductor 41 formed on the magnetic thin plate surface.
When flowing, the bubble domain pattern is gradually transferred from the moving path 121 to the holding pattern 42. The timing for flowing the current I _T 44 may be set, for example, at a phase as shown at 45 within the period of the rotating magnetic field.

The bubble that was once transferred to the holding pattern 42
With respect to the subsequent rotation of the in-plane magnetic field, the domain 40 only rotates around the holding pattern 42 and does not otherwise move. Even if the power supply of the bubble memory is malfunctioning and the regular rotating magnetic field is no longer applied, the bubble domain 40 will still be attached somewhere on the holding pattern 42, and when the regular rotating magnetic field is applied again, the bubble domain 40 will be removed. occupies the same position of each holding pattern 42.

When reading defect information, first divide the bubble domain 40 into two by passing a replicate current 46 through a conductor 43 formed on the surface of the magnetic thin plate, and transfer one side to a bubble domain relay soft layer using a transfer current 47. Transfer to magnetic pattern (relay pattern) 49.
The timing at which the current flows may be set, for example, at the phase indicated by 48. The other bubble domain remains in retention pattern 42. The bubble domain moved to relay pattern 49 is further read bubble domain.
It moves to the domain movement path 141 and moves to the detector. In FIG. 4, a circular pattern is shown as the holding pattern 42, but it goes without saying that it may be a modified pattern such as an ellipse, square, or rectangle. When it becomes necessary to erase the bubble domain in the holding pattern 42, only a transfer current is applied to the conductor 43 to read out the bubble domain without dividing it, and the bubble domain is moved to the bubble domain movement path 141, or a very large bias is applied. The bubble domain can be extinguished by applying a magnetic field.

FIG. 5 shows other bubble domain holding means and transfer means. Essentially, a bubble domain holding conductor 52 is added to the soft magnetic pattern configuration similar to that shown in FIG. When the bubble domain 50 attracted to the rectangular bubble domain holding pattern 51 is in the position shown in the figure, a holding current _IH is applied to the conductor 52, and a minor Performs the talia operation of the bubble domain in the loop. In such a holding means, the size of the holding pattern 51 can be made smaller than that of the holding pattern 42 shown in FIG. 4, and higher speed driving becomes possible. The characteristics of the holding pattern 51 when the amplitude and phase of the rotating magnetic field are distorted are the same as those shown in FIG. 4.

FIG. 6 shows a holding loop type bubble domain holding means. Each of the retention loops has soft magnetic patterns 651-656, 661-
666. The defect information sent to the bubble domain transfer path 121 is transferred to the holding loop by the magnetic field generated by the conductor 61. When performing a minor loop clearing operation, the held bubble domain 64 is moved to the position shown in the figure within the holding loop, and the holding current I _H is caused to flow through the conductor 62. When reading defect information, the bubble domain is moved to the bubble domain movement path 141 by the current applied to the conductor 63 and sent to the detector. In this case, it is necessary to re-hold the defect information as in FIG. 2, but if the conductor 63 is used as a bubble splitter, there is no need to re-hold the defect information.

Even if the amplitude and phase of the driving magnetic field are distorted and the position of the bubble domain 22 in the holding loop changes, if the driving magnetic field is reapplied while the holding current is flowing through the conductor 62, each loop portion of the conductor 62 can be fixed. Bubble domains can be aligned to

The bubble memory element used in the bubble memory device of the present invention and the holding means and transfer means included therein have been described above. The holding means and the transfer means are not only included in the bubble memory element of the minor loop mager line configuration as shown in FIG. These means can be applied to any type of bubble memory device, such as a general bubble memory device with a minor loop, a bubble memory device with multiple units in a chip configuration having a minor loop, or a bubble memory device without a minor loop. It can also be included in memory devices. Furthermore, the number of holding sections included in the holding means does not necessarily have to be equal to the number of minor loops. In this case, it becomes possible to store chip-specific information in addition to defect information.

FIG. 7 shows a second embodiment of the bubble domain element of the present invention, in which holding means and transfer means are added to a simple loop-shaped bubble domain movement path. Point 71 to point 72, point 73, point 74
The path 70 from the point 71 to the point 71 is in the form of a single loop. A replicator 75, an eraser 76, and a generator 77 are arranged between points 71 and 72. A detector 78 is connected to the replicator 75 . These functional elements are typically used to perform read and write operations.

The bubble domain device shown in FIG.
Holding means 7 having bubble domain holding parts
01, and a bubble from the moving path between points 70 and 73.
Gates 702-1 to 702-n for transferring the domain pattern to the holding means 701, and transferring the bubble domain pattern from the holding means 701 to the moving path between points 704 and 73, that is, transferring it as is. Gates 703-1 to 703-n are provided for copying and transferring the data. The holding means 701 is configured so that the extinguishing magnetic field of the bubble domain existing in the holding means 701 is larger than the value in other parts.
This is similar to the bubble domain element shown in FIG.

Storing information in holding means 701, holding means 70
Reading of information from 1 is carried out in the same way as in the case of the bubble domain element in FIG. 1, so a description thereof will be omitted. In this case, the specific information stored in the holding means 701 includes, for example, a chip number, driving conditions, etc.

FIG. 8 shows a bubble memory device of the present invention using the bubble memory element shown in FIG. The storage module 81 includes the bubble memory element shown in FIG. 1, a magnetic circuit for applying a bias magnetic field, and a coil for applying a rotating magnetic field. The direct peripheral circuit 82 includes a current supply circuit for the coil, a generator in the bubble memory element, a write gate, a read gate, a current supply circuit for the holding means and the transfer means provided in the holding means, and a detector. A detection circuit connected to the The control circuit 83, based on an external command,
During operation, it supplies timing pulses directly to the peripheral circuit 82 and processes external write information and read information from the bubble memory element based on defect information stored in the bubble memory element.

Since the normal read and write operations are the same as those of conventional bubble memory devices, the write and read operations of defect information will be described. Writing is performed after the storage module has been tested or after the storage module has been installed in the device.

The operation of the bubble memory device using the present invention when defect information regarding minor loops 10-1 to 10-n is stored in the bubble memory element holding means 18 shown in FIG. 1 will be described. First, if the minor loop is a defect from the generator 11, there is a bubble domain, and if the minor loop is not defective, it is expressed without a bubble domain, and the defect information corresponding to the minor loop 10-1 is placed at the beginning. A generator 11 generates n patterns of presence/absence of bubble domains. This bubble domain pattern was moved through the bubble domain movement path 12 and further through the bubble domain movement path 121, and the bubble domain pattern was moved through the bubble domain movement path 12 and further through the bubble domain movement path 121, and the bubble domain pattern was moved to correspond to each of the gates 17-1 to 17-n corresponding to the n holding portions of the holding means 18. After the bubble domain pattern reaches the position on the bubble domain movement path 121, the gate 171-
1 to 17-n are operated to transfer the pattern to the holding means 18. As a result, the n holding parts of the holding means 18 hold the n minor loops 10-1.
This means that the defect information corresponding to 10-n is stored.

When using this defect information in the bubble memory device, the gates 19-1 to 19-n are operated to release the bubble information from the holding means 18 as defect information.
The domain pattern is copied and transferred to the bubble domain movement path 141. Subsequently, the bubble
By moving the domain movement path 141, a pattern can be detected by the detector 13 at the end thereof, and defect information can be taken out to an external circuit. When deleting the defect information once stored in the holding means 18,
The gates 19-1 to 19-n are operated to transfer the bubble domain pattern from the holding means 18 as it is to the bubble domain movement path 141, and then move the bubble domain movement path 141 to the detector. It will be erased with the tip of the .

[Brief explanation of the drawing]

FIG. 1 shows a first bubble memory used in the bubble memory device of the present invention, which includes bubble domain holding means and transfer means for transferring bubble domains between the holding means and the bubble domain movement path. The schematic diagrams of the device, Figures 2 to 6, are bubble and
FIG. 7 is a diagram showing a specific example of the holding means and transfer means of the memory element, and FIG. 8 is a schematic diagram of the second bull memory element used in the bubble memory device of the present invention.
1 is a block diagram of a bubble memory device of the present invention using the bubble memory elements shown in FIGS. 1-7. In the figure, 10 is each minor loop, 11 is a generator, 12 is a write major line, 13
is the detector, 14 is the readout mager line, 1
5 is a write gate, 16 is a read gate, 17,
19 is a transfer gate, 18 is bubble domain holding means, 121 and 141 are bubble domain movement paths, 81 is a storage module including the bubble memory element shown in FIG. 1 or FIG. 7, 82 is a direct peripheral circuit, 83 is a control circuit.

Claims (1)

[Claims] 1. A bubble memory device including a bubble memory element comprising bubble domain holding means and transfer means for transferring a bubble domain between the holding means and a bubble domain movement path, The element has a major/minor configuration, and further includes means for retaining defect information of minor loops in the major line portion with or without a bubble domain, and when the bubble domain of the bubble domain retaining means disappears. The magnetic field is sufficiently larger than the extinction magnetic field of other parts in the bubble memory element, and the defective part included in the bubble memory element is removed based on the defect information stored in the bubble domain holding means. A bubble memory device characterized in that it is controlled not to be used.