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JPS6156592B2 - - Google Patents
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JPS6156592B2 - - Google Patents

Info

Publication number
JPS6156592B2
JPS6156592B2 JP60165672A JP16567285A JPS6156592B2 JP S6156592 B2 JPS6156592 B2 JP S6156592B2 JP 60165672 A JP60165672 A JP 60165672A JP 16567285 A JP16567285 A JP 16567285A JP S6156592 B2 JPS6156592 B2 JP S6156592B2
Authority
JP
Japan
Prior art keywords
magnetic
bias magnet
resin case
shield case
shunt plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60165672A
Other languages
Japanese (ja)
Other versions
JPS6145489A (en
Inventor
Yanosuke Akaboshi
Toshiaki Suketa
Shiro Naoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60165672A priority Critical patent/JPS6145489A/en
Publication of JPS6145489A publication Critical patent/JPS6145489A/en
Publication of JPS6156592B2 publication Critical patent/JPS6156592B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は磁気バブルメモリ装置の製造方法に関
する。一般に磁性薄膜は面内方向に磁区の磁化容
易軸を持つているが、ある種の磁性薄膜、例えば
オルソフエライトや磁性ガーネツト等においては
磁区が膜面に対し垂直な磁化容易軸を持つてい
る。この薄膜は外部から磁界を加えないときは上
向きの磁化方向の磁区と下向きの磁区とがほぼ等
面積で縞状に交互に入りまじつた状態になつてい
るが、外部から下向きに垂直方向の磁界を加えて
行くと上向きの磁区はへり、下向きの磁区が拡が
つて、遂には上向きの磁区は直径数μm程度の円
筒磁区となる。この円筒磁区をバブルドメインい
う。このバブルドメイン磁界の勾配により磁性薄
膜内を自由に動かすことができることから、この
バブルドメインをメモリ素子として利用したのが
磁気バブルメモリ装置である。第1図にこの磁気
バブルメモリ装置の1例を示す。これについて簡
単に説明するとチツプ1は絶縁基板2の上に搭載
され、その周囲にはチツプ1に水平な回転磁界を
与えるための駆動コイル3および4が直交して設
けられ、これらはモールドされるか或いは樹脂ケ
ース5に挿入され、さらにモールド又は樹脂ケー
ス5の外側に形成された凹部に嵌入されたバイア
スマグネツト7および整磁板8と共に、ヨークを
兼ねたシールドケース9に装入されている。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a magnetic bubble memory device. Generally, magnetic thin films have magnetic domains with easy magnetization axes in the in-plane direction, but in some types of magnetic thin films, such as orthoferrite and magnetic garnet, magnetic domains have easy magnetization axes perpendicular to the film plane. When no external magnetic field is applied to this thin film, the magnetic domains with upward magnetization direction and the magnetic domains with downward magnetization direction alternate in a striped pattern with approximately equal area. As the magnetic field is added, the upward magnetic domain becomes narrower, the downward magnetic domain expands, and finally the upward magnetic domain becomes a cylindrical magnetic domain with a diameter of several micrometers. This cylindrical magnetic domain is called a bubble domain. Since the bubble domains can be moved freely within the magnetic thin film due to the gradient of the magnetic field, magnetic bubble memory devices utilize these bubble domains as memory elements. FIG. 1 shows an example of this magnetic bubble memory device. To briefly explain this, the chip 1 is mounted on an insulating substrate 2, and drive coils 3 and 4 are provided around it orthogonally to give a horizontal rotating magnetic field to the chip 1, and these are molded. Alternatively, it is inserted into the resin case 5 and is further inserted into a shield case 9 which also serves as a yoke together with the bias magnet 7 and the magnetic shunt plate 8 which are fitted into a mold or a recess formed on the outside of the resin case 5. .

このように磁気バブルメモリ装置において、バ
イアスマグネツト7と整磁板8とは接着剤にて接
合され、次いで接着剤にて樹脂ケース5の凹部に
接着され、更にその上に接着剤を塗つてシールド
ケース9に装入される。従つてこのような磁気バ
ブルメモリ装置においては、バイアスマグネツト
7と整磁板8との間、およびバイアスマグネツト
7とシールドケース9との間に接着剤の層がで
き、しかもその厚さにバラツキを生ずる。このた
め磁気回路の磁気抵抗のバラツキや放熱効果のバ
ラツキを生ずる。本発明はこの欠点を改良するた
めに案出されたものである。
In this way, in the magnetic bubble memory device, the bias magnet 7 and the magnetic shunt plate 8 are bonded with adhesive, and then bonded to the recessed part of the resin case 5 with adhesive, and then an adhesive is applied thereon. The shield case 9 is loaded. Therefore, in such a magnetic bubble memory device, a layer of adhesive is formed between the bias magnet 7 and the magnetic shunt plate 8, and between the bias magnet 7 and the shield case 9, and the thickness of the adhesive layer is Causes variation. This causes variations in the magnetic resistance of the magnetic circuit and variations in the heat dissipation effect. The present invention has been devised to improve this drawback.

このため本発明においては磁気バブルメモリチ
ツプと、該チツプのバブルを駆動するコイルとを
挿入した樹脂ケースと、該樹脂ケースの外側に形
成された凹部に嵌入したバイアスマグネツトおよ
び整磁板とをヨークを兼ねたシールドケースに装
入して成る磁気バブルメモリ装置において、前記
樹脂ケースの凹部にバイアスマグネツトおよび整
磁板を嵌入した後、該樹脂ケースをシールドケー
スに装入し、その後外部よりバイアスマグネツト
を着磁することにより該バイアスマグネツトと整
磁板とを磁気力にてシールドケースに接着し、し
かる後シールドケースと樹脂ケースとのすき間に
充填材を注入して該バイアスマグネツトおよび整
磁板を固定することを特徴とするものである。
For this reason, the present invention includes a resin case into which a magnetic bubble memory chip and a coil for driving the bubbles of the chip are inserted, and a bias magnet and a magnetic shunt plate fitted into a recess formed on the outside of the resin case. In a magnetic bubble memory device that is inserted into a shield case that also serves as a yoke, a bias magnet and a magnetic shunt plate are inserted into the recesses of the resin case, and then the resin case is inserted into the shield case, and then it is removed from the outside. By magnetizing the bias magnet, the bias magnet and the magnetic shunt plate are bonded to the shield case by magnetic force, and then a filler is injected into the gap between the shield case and the resin case to close the bias magnet. and fixing the magnetic field shunt plate.

以下添付図面に基づいて本発明の実施例につき
詳細に説明する。
Embodiments of the present invention will be described in detail below based on the accompanying drawings.

第2図に本発明方法により組立られる磁気バブ
ルメモリ装置の分解斜視図を示す。但し樹脂ケー
スの中に挿入されるチツプ、絶縁基板、コイルは
図示を省略した。図において符号10は樹脂ケー
ス、11,11′はバイアスマグネツト、12,
12′は整磁板、13はヨークを兼ねたシールド
ケースである。そして樹脂ケース10にはチツ
プ、絶縁基板、コイル等を入する孔10aと、バ
イアスマグネツト11,11′および整磁板1
2,12′を嵌入する凹部10bとが形成されて
いる。このような各部材は次の如くにして組立て
られる。
FIG. 2 shows an exploded perspective view of a magnetic bubble memory device assembled by the method of the present invention. However, the chip, insulating board, and coil inserted into the resin case are not shown. In the figure, reference numeral 10 is a resin case, 11, 11' are bias magnets, 12,
12' is a magnetic field shunt plate, and 13 is a shield case that also serves as a yoke. The resin case 10 has holes 10a for inserting chips, insulating substrates, coils, etc., and bias magnets 11, 11' and magnetic shunt plates 1.
A recessed portion 10b into which the portions 2 and 12' are fitted is formed. Each of these members is assembled in the following manner.

先ず樹脂ケース10の孔10aにチツプを搭載
した絶縁基板およびコイルを挿入固定し、次に樹
脂ケース10の凹み10bに整磁板12又は1
2′とバイアスマグネツト11又は11′を重ねて
嵌入し、その状態でシールドケース13に装入す
る。しかる後シールドケース13の外部よりバイ
アスマグネツト11,11′を着磁し、その磁気
力により該バイアスマグネツト11,11′と整
磁板12,12′とをシールドケース13に密着
せしめる。次いで第3図の如く樹脂ケース10の
溝10cおよび10c′より充填材14を注入して
樹脂ケース10の凹部10bとバイアスマグネツ
ト11又は11′および整磁板12又は12′との
すきまを充填する。
First, the insulating board with the chip mounted thereon and the coil are inserted and fixed into the hole 10a of the resin case 10, and then the magnetic shunt plate 12 or 1 is inserted into the recess 10b of the resin case 10.
2' and the bias magnet 11 or 11' are fitted together and inserted into the shield case 13 in this state. Thereafter, the bias magnets 11, 11' are magnetized from outside the shield case 13, and the bias magnets 11, 11' and the magnetic shunt plates 12, 12' are brought into close contact with the shield case 13 by the magnetic force. Next, as shown in FIG. 3, a filler 14 is injected into the grooves 10c and 10c' of the resin case 10 to fill the gaps between the recess 10b of the resin case 10, the bias magnet 11 or 11', and the magnetic shunt plate 12 or 12'. do.

このように組立てられた磁気バブルメモリ装置
はシールドケース13とバイアスマグネツト1
1,11′との間、およびバイアスマグネツト1
1,11′と整磁板12,12′との間には接着剤
とか充填材が入らないため熱の伝導が良く、また
磁気抵抗も少なくなり、さらにこれらのバラツキ
も少なくなる。また振動に対しては充填材14に
より固定されるため安全である。
The magnetic bubble memory device assembled in this way includes a shield case 13 and a bias magnet 1.
1, 11', and bias magnet 1
Since there is no adhesive or filler between the magnetic field shunt plates 1, 11' and the magnetic field shunt plates 12, 12', heat conduction is good, magnetic resistance is reduced, and variations in these are also reduced. Furthermore, it is safe against vibrations because it is fixed by the filler 14.

以上説明した如く本発明の磁気バブルメモリ装
置の製造方法は、シールドケースとバイアスマグ
ネツトおよび整磁板の接着に磁気力を利用するこ
とにより磁気バブルメモリ装置の放熱性および磁
気特性を改善し、また接着剤を用いた接着工程を
省略することにより組立工数の節減を可能とした
ものである。
As explained above, the method for manufacturing a magnetic bubble memory device of the present invention improves the heat dissipation and magnetic properties of the magnetic bubble memory device by using magnetic force to bond the shield case, the bias magnet, and the magnetic shunt plate. Furthermore, by omitting the bonding process using adhesive, it is possible to reduce assembly man-hours.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の磁気バブルメモリ装置の1例の
断面図、第2図および第3図は本発明の実施例を
説明するための図であり、第2図は磁気バブルメ
モリ装置の分解斜視図、第3図はその組立断面図
である。 10……樹脂ケース、11,11′……バイア
スマグネツト、12,12′…整磁板、13……
シールドケース、14……充填材。
FIG. 1 is a sectional view of an example of a conventional magnetic bubble memory device, FIGS. 2 and 3 are diagrams for explaining an embodiment of the present invention, and FIG. 2 is an exploded perspective view of the magnetic bubble memory device. FIG. 3 is an assembled sectional view thereof. 10... Resin case, 11, 11'... Bias magnet, 12, 12'... Magnetic shunt plate, 13...
Shield case, 14...Filling material.

Claims (1)

【特許請求の範囲】[Claims] 1 磁気バブルメモリチツプと、該チツプのバブ
ルを駆動するコイルとを挿入した樹脂ケースと、
該樹脂ケースの外側に形成された凹部に嵌入した
バイアスマグネツトおよび整磁板とをヨークを兼
ねたシールドケースに装入して成る磁気バブルメ
モリ装置において、前記樹脂ケースの凹部にバイ
アスマグネツトおよび整磁板を嵌入した後、該樹
脂ケースをシールドケースに装入し、その後外部
よりバイアスマグネツトを着磁することにより該
バイアスマグネツトと整磁板とを磁気力にてシー
ルドケースに接着し、しかる後シールドケースと
樹脂ケースとのすき間に充填材を注入して該バイ
アスマグネツトおよび整磁板を固定することを特
徴とする磁気バブルメモリ装置の製造方法。
1. A resin case into which a magnetic bubble memory chip and a coil for driving the bubbles of the chip are inserted;
In a magnetic bubble memory device, a bias magnet and a magnetic shunt plate fitted into a recess formed on the outside of the resin case are inserted into a shield case that also serves as a yoke. After fitting the magnetic shunt plate, the resin case is inserted into the shield case, and then the bias magnet is magnetized from the outside, and the bias magnet and the magnetic shunt plate are bonded to the shield case by magnetic force. . A method of manufacturing a magnetic bubble memory device, which comprises: thereafter injecting a filler into the gap between the shield case and the resin case to fix the bias magnet and the magnetic shunt plate.
JP60165672A 1985-07-29 1985-07-29 Production of magnetic bubble device Granted JPS6145489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60165672A JPS6145489A (en) 1985-07-29 1985-07-29 Production of magnetic bubble device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60165672A JPS6145489A (en) 1985-07-29 1985-07-29 Production of magnetic bubble device

Publications (2)

Publication Number Publication Date
JPS6145489A JPS6145489A (en) 1986-03-05
JPS6156592B2 true JPS6156592B2 (en) 1986-12-03

Family

ID=15816831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60165672A Granted JPS6145489A (en) 1985-07-29 1985-07-29 Production of magnetic bubble device

Country Status (1)

Country Link
JP (1) JPS6145489A (en)

Also Published As

Publication number Publication date
JPS6145489A (en) 1986-03-05

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