JPS6161522B2 - - Google Patents
Info
- Publication number
- JPS6161522B2 JPS6161522B2 JP55148766A JP14876680A JPS6161522B2 JP S6161522 B2 JPS6161522 B2 JP S6161522B2 JP 55148766 A JP55148766 A JP 55148766A JP 14876680 A JP14876680 A JP 14876680A JP S6161522 B2 JPS6161522 B2 JP S6161522B2
- Authority
- JP
- Japan
- Prior art keywords
- firing
- insulating film
- coating agent
- container
- molded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010304 firing Methods 0.000 claims description 38
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 13
- 239000011787 zinc oxide Substances 0.000 claims description 12
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 8
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000000748 compression moulding Methods 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 30
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 10
- 238000000576 coating method Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000011701 zinc Substances 0.000 description 5
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
本発明は、絶縁被膜形成用塗布剤の焼成容器内
における塗布態様を適当にした状態で同一焼成容
器内に収容された複数の素子を同時に焼成するこ
とによつて、1つ以上の素子側面に均一、且つ良
好な絶縁被膜を形成させるようにした電圧非直線
抵抗体素子の製造方法に関するものである。
従来この種高純度の酸化亜鉛ZnOを主成分とし
て他にビスマスBi、コバルトCo、マンガンMn、
アンチモンSbなどの酸化物を微量含む電圧非直
線抵抗体素子(以下素子と呼ぶ)の側面絶縁方法
は、焼成後素子側面にエポキシ系有機物を塗布し
て絶縁被膜を形成させるか、或いは素子の焼成前
に種々の無機化合物を素子側面に塗布後焼成し、
焼成後ガラスまたは結晶質の絶縁物となる絶縁被
膜体を形成させていたのが実状である。
しかし、前者の方法においては、塗布されるエ
ポキシ系有機物と素子本体との密着性が悪く、こ
のため、素子に水分が吸着され特性劣化が大きく
短波尾耐量も弱くなるという欠点がある。また素
子本体とエポキシ樹脂との間に熱膨張の差がある
ため、熱衝撃で素子側面に被覆されたエポキシ樹
脂にクラツクが入り劣化の原因となる欠点があ
る。一方、後者の方法においては、焼成時に素子
本体と側面絶縁剤の収縮率を一致させる必要があ
る。このため一次焼成して或る程度圧縮成形素子
を収縮させ、しかる後に無機化合物又はそれらの
混合物を一次焼成素子側面に塗布して本焼成し無
機質絶縁側面被膜を形成させている。この場合、
2回に分けて焼成するので、燃料(電力を含む)
費と焼成装置を2回使用するので製造コストが上
昇するという欠点がある。
更に両者の方法とも側面絶縁被膜を必要厚に均
一にするため、相当の技術と装置を要するという
欠点がある。
このため従来より、ピンホールがなく緻密で均
一の結晶粒を持ち、素子本体との密着性が良い絶
縁被膜体が形成され得、且つ素子特性劣化が少な
く、電流放電耐量、耐コロナ性、耐アーク性の諸
特性が優れた電圧非直線抵抗体素子の焼成方法も
考えられていないわけではない。
この焼成方法とは、焼成に用いる容器内にアン
チモン酸化物を入れ、同容器内にZnOを主成分と
する成形体を入れて素体の焼成と同時にその側面
に絶縁被膜を形成させるようにしたものである。
この方法を更に第1図a,bにより説明すれば
以下のようである。
図示の如くアルミナ質の焼成容器1の底には耐
熱性セラミツク材、例えばアルミナから成る台座
6が載置され、この台座6の上に敷粉5の層を介
して、圧縮成形された素子3を置くようにする。
この場合敷粉5は台座6と素子3の溶着を防ぐも
のである。また焼成容器1の内側面には素子3側
面に絶縁被膜を形成させるための塗布剤2が塗布
され、焼成容器1の上部には焼成容器1と同質性
の蓋4が設けられる。
台座6の材質はアルミナ質又は酸化亜鉛系焼結
板等が良く、特に酸化亜鉛系焼結板は素子3の主
成分と同質なので焼結された素子の特性を損ねる
恐れがなく望ましいものとなつている。敷粉5は
アルミナ質やZnO素子の造粉末分又はZnO素子を
仮焼して砕いた粉等が用いられ、ZnO素子の成分
に類似又は同質のものが台座6の場合よりも強く
要求される。なお台座6に素子3と同質系のもの
を用いた場合は敷粉5がなくても良い。
ところで素子3はZnO(91mol%)にSb2O3、
Bi2O3、Co2O3、Cr2O3、MnO2、SiO2等合計
(9mol%)の混合物を加え、充分混合した後適当
な形状、例えば円柱状に圧縮成形したものであ
り、例えば直径40mmφ、厚さ約30mmの円柱形に成
形される。また塗布剤2は、Sb2O3、Sb2O4、
Sb2O5のうち少なくとも1つ以上を含むアンチモ
ン酸化物を主成分とした化合物であつて、水でも
つてスラリーとされ、焼成容器1の内側面に塗布
された後乾燥される。塗布剤2はBi2O3、SiO2を
含むものであつて何等差し支えない。
このように塗布剤2が塗布された焼成容器1内
に成形された素子3を入れ蓋4をして密閉にした
状態で焼成を行なうものである。この密閉状態で
1000℃〜1400℃(素子3の電気特性の点からは
1100℃〜1300℃が好ましい)の温度範囲で焼成す
ると、塗布剤2の主成分であるアンチモン酸化物
が昇華して容器1内はアンチモン酸化物の雰囲気
となり、素子3表面のZnO、Bi2O3等と固−気相
反応し素子3の表面には高抵抗の絶縁被膜が形成
されるところとなるものである。
上記の固−気相反応を簡単に説明すれば、酸化
アンチモンのうちSb2O3は約570℃でSb2O4に、
Sb2O5は357℃以上でSb2O4になる。形成された
Sb2O4は920℃付近より昇華し始め1000℃以上で
は非常に活発になり、焼成容器1内は酸化アンチ
モンの雰囲気となる。一方素子3は800℃〜1000
℃の温度領域で体積比で約40%収縮しZnOの他、
Zn2SiO4、パイロクロア、Zn2Bi3Sb3O4、Zn2.
33Sb0.67O4、14Bi2O3・Cr2O3等の結晶相が形成さ
れる。素子3表面では容器1内に発生した酸化ア
ンチモンと素子3内から拡散してくるZn2+とが反
応し、素子3表面には絶縁被膜であるところの
Zn2.33Sb0.67O4(スピネル)が形成され素子3と
共に焼結されるものである。
焼成による絶縁被膜の形成方法は以上のようで
あるが、この方法にも問題がないわけではない。
というのは、塗布剤2に対向し、しかも塗布剤2
に近接した素子3側面部分には良好に絶縁被膜が
形成されるが、それ以外の側面部分には良好に絶
縁被膜が形成されないということである。即ち、
このことは素子3の焼成容器1内における収容位
置によつて素子3側面に対する絶縁被膜の形成態
様が異なり、素子3間のみならず同一素子であつ
てもその側面に対する絶縁被膜の厚さは異なるこ
とを示唆しているものであり、この欠点は収容さ
れる素子が多くなる程に顕著となる。尚、第1図
a,bにおいて素子3の上端面は何等マスクされ
ていないことから、その上端にも絶縁被膜が形成
されることになるが、その絶縁被膜は後に研摩除
去される。これは、素子3の上下端面には後に電
極が取付される必要があるからである。尤もマス
キングによつて絶縁被膜が形成されないようにす
ることは勿論可能である。
よつて本発明の目的は、成形体あるいは仮焼体
としての1つ以上の素子を同一焼成容器内で焼成
する際、それら素子側面に均一、且つ良好な絶縁
被膜が形成され得る電圧非直線抵抗体素子の製造
方法を供するにある。
この目的のため本発明は、少なくとも素子上部
外周囲近傍あるいは素子下部外周囲近傍に塗布剤
を素子とは非接触にして塗布配置した状態で焼成
を行なうようにしたものである。
以下、本発明を第2図から第4図により説明す
る。
先ず第2図a,bに示す第1の具体的実施態様
より説明すれば、これは台座6載置面を除く焼成
容器1(内寸法300mm(縦)×300mm(横)×60mm
(高さ))底面に一様に塗布剤2を塗布した状態で
焼成を行なわんとしたものであり、他は従来の場
合に同様である。これによると、9個の何れの素
子(40mm(直径)×40mm(厚さあるいは高さ)の
成形体あるいはこれを仮焼した仮焼体)3の下部
近傍にも非接触にして塗布剤2が存在することか
ら、各素子3側面にほぼ同一条件下でも絶縁被膜
が形成され、素子3側面にはほぼ均一な厚さの絶
縁被膜が形成されるところとなるものである。
尚、Sb2O3がそれぞれ5g、10g、15g含まれる
ように塗布剤を塗布した場合の結果は後述すると
ころである。
次に第3図a,bにより第2の具体的実施態様
を説明する。
本実施態様は図示の如く蓋4の底面全体にも一
様に塗布剤2を塗布した状態で焼成を行なわんと
したものである。第1の実施態様においては各素
子3側面にほぼ同一条件で絶縁被膜が形成される
にしても、その条件にはややむらがあることは否
めない。よつて本実施態様では焼成容器1内空間
を更に均一条件下におくべく蓋4底面にも塗布剤
2を塗布するものである。このようにする場合は
第1の実施態様の場合よりも絶縁被膜がより均一
に形成され得るであろうことは想像するに難くな
い。尚、本実施態様での焼成容器1内寸法は300
mm(縦)×300mm(横)×40mm(高さ)、9個の素子
3の寸法は40mm(直径)×30mm(厚さあるいは高
さ)の成形体(あるいはこれを仮焼した仮焼体で
も可)であり、塗布剤2はSb2O3が10g含まれる
ように塗布したが、その結果は同様に後述すると
ころである。
第4図a,bは本発明の第3の具体的実施態様
を示す。
本実施態様(焼成容器1内寸法、素子3寸法は
第1の具体的実施態様の場合に同じ)では図示の
如く台座(直径60mm)6の外周端部上に外周縁よ
り10mmの範囲に亘つて環状に塗布剤2をSb2O3が
約1g含まれるように塗布するとともに、素子3
上端面に敷粉5を介して載置されたアルミナ板
(直径60mm)7の底面外周端部上にも同様にして
塗布剤2をSb2O3が約1g含まれるように塗布し
た状態で焼成を行なうようにしたものであり、そ
の結果は以下の表に示すところである。
The present invention is capable of coating a side surface of one or more elements by simultaneously firing a plurality of elements housed in the same firing container with an appropriate application mode of the coating agent for forming an insulating film in the firing container. The present invention relates to a method of manufacturing a voltage nonlinear resistor element that forms a uniform and good insulation film. Conventionally, this kind of high-purity zinc oxide ZnO is the main component, and other materials include bismuth Bi, cobalt Co, manganese Mn,
The side insulation method for a voltage nonlinear resistor element (hereinafter referred to as an element) containing a small amount of oxide such as antimony Sb is to apply an epoxy-based organic substance to the side surface of the element after firing to form an insulating film, or to bake the element. First, various inorganic compounds are applied to the side of the device and then baked.
The actual situation is that an insulating coating that becomes a glass or crystalline insulator after firing is formed. However, the former method has the disadvantage that the adhesion between the applied epoxy-based organic substance and the element body is poor, and as a result, moisture is adsorbed to the element, resulting in significant deterioration of characteristics and weakening of short-wave tail resistance. Furthermore, since there is a difference in thermal expansion between the element body and the epoxy resin, there is a drawback that thermal shock can cause cracks in the epoxy resin coated on the side surfaces of the element, causing deterioration. On the other hand, in the latter method, it is necessary to match the shrinkage rates of the element body and the side insulating material during firing. For this purpose, the compression-molded element is first fired to shrink the element to some extent, and then an inorganic compound or a mixture thereof is applied to the side surface of the first fired element and then main fired to form an inorganic insulating side surface coating. in this case,
Since it is fired in two batches, the fuel (including electricity)
This method has the disadvantage that the manufacturing cost increases because the firing equipment is used twice. Furthermore, both methods have the disadvantage that considerable skill and equipment are required to make the side insulating coating uniform to the required thickness. Therefore, it has been possible to form an insulating film that has no pinholes, has dense and uniform crystal grains, and has good adhesion to the device body, and has little deterioration in device characteristics, such as current discharge withstand capacity, corona resistance, and resistance. A method for firing a voltage nonlinear resistor element with excellent arc properties has not been considered. In this firing method, antimony oxide is placed in a container used for firing, and a molded body whose main component is ZnO is placed in the same container, and an insulating film is formed on the side surface of the body at the same time as the body is fired. It is something. This method will be further explained below with reference to FIGS. 1a and 1b. As shown in the figure, a pedestal 6 made of a heat-resistant ceramic material such as alumina is placed on the bottom of an alumina firing container 1, and a compression-molded element 3 is placed on the pedestal 6 with a layer of powder 5 interposed therebetween. Make sure to put the .
In this case, the bedding powder 5 prevents the pedestal 6 and the element 3 from welding. Further, a coating agent 2 for forming an insulating film on the side surface of the element 3 is applied to the inner surface of the firing container 1, and a lid 4 having the same properties as the firing container 1 is provided on the upper part of the firing container 1. The material of the pedestal 6 is preferably alumina or a zinc oxide sintered plate. In particular, a zinc oxide sintered plate is the same as the main component of the element 3, so it is preferable since there is no risk of impairing the characteristics of the sintered element. ing. The bed powder 5 is made of alumina or ZnO element powder, or calcined and crushed powder of the ZnO element, and is more strongly required than the case of the pedestal 6 to be similar or the same as the components of the ZnO element. . Note that if the pedestal 6 is made of the same material as the element 3, the bedding powder 5 may be omitted. By the way, element 3 contains ZnO (91 mol%), Sb 2 O 3 ,
A mixture of Bi 2 O 3 , Co 2 O 3 , Cr 2 O 3 , MnO 2 , SiO 2 etc. in total (9 mol %) is added, thoroughly mixed, and then compression molded into a suitable shape, for example, a cylindrical shape. For example, it is molded into a cylindrical shape with a diameter of 40 mmφ and a thickness of about 30 mm. Moreover, coating agent 2 contains Sb 2 O 3 , Sb 2 O 4 ,
It is a compound mainly composed of antimony oxide containing at least one of Sb 2 O 5 , which is made into a slurry with water, and is applied to the inner surface of the firing container 1 and then dried. The coating agent 2 may contain any of Bi 2 O 3 and SiO 2 . The molded element 3 is placed in the firing container 1 coated with the coating agent 2 in this manner, and the lid 4 is closed to perform firing. In this closed state
1000°C to 1400°C (from the point of view of the electrical characteristics of element 3)
When fired at a temperature range of 1100°C to 1300°C (preferably 1100°C to 1300°C), antimony oxide, which is the main component of coating agent 2, sublimates, creating an atmosphere of antimony oxide in container 1, and ZnO and Bi 2 O on the surface of element 3. 3 , etc., and a high resistance insulating film is formed on the surface of the element 3. To briefly explain the above solid-gas phase reaction, Sb 2 O 3 of antimony oxide turns into Sb 2 O 4 at about 570°C.
Sb 2 O 5 becomes Sb 2 O 4 at temperatures above 357°C. Been formed
Sb 2 O 4 begins to sublimate at around 920°C and becomes extremely active at temperatures above 1000°C, and the inside of the firing container 1 becomes an atmosphere of antimony oxide. On the other hand, element 3 is 800℃~1000℃
In addition to ZnO, which shrinks by about 40% by volume in the temperature range of °C,
Zn 2 SiO 4 , pyrochlore, Zn 2 Bi 3 Sb 3 O 4 , Zn 2 .
Crystal phases such as 33 Sb 0 . 67 O 4 and 14 Bi 2 O 3 Cr 2 O 3 are formed. On the surface of the element 3, antimony oxide generated in the container 1 reacts with Zn 2+ diffused from inside the element 3, and the surface of the element 3 is covered with an insulating film.
Zn 2 . 33 Sb 0 . 67 O 4 (spinel) is formed and sintered together with the element 3. Although the method for forming an insulating film by firing is as described above, this method is not without its problems.
This is because the coating agent 2 is opposite to the coating agent 2, and the coating agent 2
The insulating film is well formed on the side surface portion of the element 3 that is close to the side surface of the element 3, but the insulating film is not well formed on the other side surface portions. That is,
This means that the manner in which the insulating coating is formed on the side surface of the element 3 differs depending on the housing position of the element 3 in the firing container 1, and the thickness of the insulating coating on the side surface varies not only between elements 3 but also even for the same element. This suggests that this disadvantage becomes more pronounced as the number of elements accommodated increases. In addition, since the upper end surface of the element 3 is not masked in any way in FIGS. 1a and 1b, an insulating film will be formed also on the upper end, but this insulating film will be removed by polishing later. This is because electrodes need to be attached to the upper and lower end surfaces of the element 3 later. Of course, it is possible to prevent the formation of the insulating film by masking. Therefore, an object of the present invention is to provide a voltage nonlinear resistance that can form a uniform and good insulating film on the side surfaces of one or more elements as molded bodies or calcined bodies when they are fired in the same firing container. The present invention provides a method for manufacturing a body element. For this purpose, in the present invention, firing is performed with a coating agent being applied at least near the outer periphery of the upper part of the element or near the outer periphery of the lower part of the element without contacting the element. The present invention will be explained below with reference to FIGS. 2 to 4. First, to explain the first specific embodiment shown in FIGS. 2a and 2b, this is a firing container 1 (inner dimensions 300 mm (vertical) x 300 mm (horizontal) x 60 mm excluding the mounting surface of the pedestal 6).
(Height)) The firing was performed with the coating agent 2 uniformly applied to the bottom surface, and the other aspects were the same as in the conventional case. According to this, the coating agent 2 can be applied without contacting the vicinity of the bottom of any of the nine elements (40 mm (diameter) x 40 mm (thickness or height) molded body or calcined body) 3. Because of this, an insulating film is formed on the side surface of each element 3 even under substantially the same conditions, and an insulating film with a substantially uniform thickness is formed on the side surface of each element 3.
The results will be described later when the coating agent was applied so that Sb 2 O 3 was contained in amounts of 5 g, 10 g, and 15 g, respectively. Next, a second specific embodiment will be explained with reference to FIGS. 3a and 3b. In this embodiment, firing is performed with the coating agent 2 uniformly applied to the entire bottom surface of the lid 4 as shown in the figure. In the first embodiment, even though the insulating coating is formed on the side surface of each element 3 under substantially the same conditions, it cannot be denied that the conditions are somewhat uneven. Therefore, in this embodiment, the coating agent 2 is also applied to the bottom surface of the lid 4 in order to keep the interior space of the firing container 1 under more uniform conditions. It is not difficult to imagine that in this case, the insulating film could be formed more uniformly than in the first embodiment. In addition, the internal dimensions of the firing container 1 in this embodiment are 300 mm.
mm (length) x 300 mm (width) x 40 mm (height), the dimensions of the nine elements 3 are 40 mm (diameter) x 30 mm (thickness or height) molded body (or calcined body of this) Coating agent 2 was coated to contain 10 g of Sb 2 O 3 , and the results will be described later as well. Figures 4a and 4b show a third specific embodiment of the invention. In this embodiment (the internal dimensions of the firing container 1 and the dimensions of the element 3 are the same as those in the first specific embodiment), as shown in the figure, a pedestal (60 mm in diameter) is placed on the outer peripheral edge of the pedestal (diameter 60 mm) over a range of 10 mm from the outer peripheral edge. Apply coating agent 2 in a ring shape so that it contains about 1 g of Sb 2 O 3 , and
Coating agent 2 was similarly applied to the outer peripheral edge of the bottom surface of the alumina plate (diameter 60 mm) 7 placed on the top surface with bedding powder 5 interposed therebetween, so that about 1 g of Sb 2 O 3 was included. The results are shown in the table below.
【表】
上記表より本発明による場合は特性が良好な電
圧非直線抵抗体素子が得られることが判る。因み
に第1の具体的実施態様について言及すれば、
Sb2O3が5g含まれるように塗布剤を塗布した場
合には絶縁被膜の厚さが十分でなく、また10gの
場合には均一な厚さの絶縁被膜が得られなかつ
た。しかし、15g含まれるようにした場合は厚
さ、均一性とも十分となり、良好な放電耐量が得
られた。
本発明は以上のようなものであるが、一般的に
塗布剤の塗布量を如何程にするかはその組成や目
標絶縁被膜厚さ、焼成容器寸法、素子の数や容
量、寸法、更には焼成条件等を十分考慮して好ま
しくは実験的に定められるべきであろう。
以上説明したように本発明は、同一焼成容器内
に収容された1以上の成形体としての素子を焼成
する際、少なくとも各素子の下部外周囲近傍ある
いは上部外周囲近傍に絶縁被膜形成用塗布剤を存
在させた状態で焼成するものであるから、各素子
側面には均一、且つ緻密な必要十分厚さの高抵抗
絶縁被膜が形成され得るという効果がある。した
がつて本発明による場合は、電気的特性が優れた
電圧非直線抵抗体が大量生産し得ることになる。[Table] From the above table, it can be seen that according to the present invention, a voltage nonlinear resistor element with good characteristics can be obtained. Incidentally, referring to the first specific embodiment,
When the coating agent was applied so as to contain 5 g of Sb 2 O 3 , the thickness of the insulating film was insufficient, and when the amount of Sb 2 O 3 was 10 g, an insulating film with a uniform thickness could not be obtained. However, when the content was 15g, the thickness and uniformity were sufficient, and good discharge durability was obtained. The present invention is as described above, but the amount of coating agent to be applied generally depends on its composition, target insulation coating thickness, firing container dimensions, number of elements, capacity, dimensions, and more. It should preferably be determined experimentally, giving due consideration to firing conditions and the like. As explained above, the present invention provides a coating agent for forming an insulating film at least near the lower outer periphery or near the upper outer periphery of each element when firing elements as one or more molded bodies housed in the same firing container. Since the firing is performed in the presence of , a uniform, dense, and sufficiently thick high-resistance insulating film can be formed on the side surfaces of each element. Therefore, according to the present invention, voltage nonlinear resistors with excellent electrical characteristics can be mass-produced.
第1図a,bは、従来技術に係る電圧非直線抵
抗体の製造(焼成)方法を説明するための平面図
とそのA−A線に係る断面図、第2図a,b、第
3図a,bおよび第4図a,bは、何れも本発明
の具体的実施態様を示し、各図aは何れも平面図
を、また、各図bはそれぞれ対応する図aにおけ
るB−B線、C−C線、D−D線に係る断面図を
示す。
1……焼成容器、2……塗布剤、3……素子
(成形体)、4……蓋、5……敷粉、6……台座、
7……アルミナ板。
FIGS. 1a and 1b are a plan view and a cross-sectional view taken along the line A-A for explaining a method for manufacturing (firing) a voltage nonlinear resistor according to the prior art; FIGS. 2a and 3b are Figures a, b and Figures 4 a and b all show specific embodiments of the present invention, each figure a is a plan view, and each figure b is a line B-B in the corresponding figure a. FIG. 3 shows cross-sectional views taken along lines C-C and D-D. 1... Baking container, 2... Coating agent, 3... Element (molded body), 4... Lid, 5... Bedding powder, 6... Pedestal,
7...Alumina plate.
Claims (1)
ト、マンガン、アンチモン等の酸化物を微量加え
て混合、造粒、圧縮成形、焼成することによつて
電圧非直線抵抗体素子を得る製造方法において、
同一焼成容器内に収容された1以上の成形体を焼
成する際、少なくとも各成形体の上部外周囲近傍
あるいは下部外周囲近傍に成形体とは非接触にし
て、アンチモン酸化物を主成分とする化合物を塗
布配置させた状態で焼成を行なうようにしたこと
を特徴とする電圧非直線抵抗体素子の製造方法。1. A manufacturing method for obtaining a voltage nonlinear resistor element by adding a small amount of oxides such as bismuth, cobalt, manganese, antimony, etc. to high-purity zinc oxide as the main component, mixing, granulating, compression molding, and firing.
When firing one or more molded bodies housed in the same firing container, at least the vicinity of the upper outer periphery or the lower outer periphery of each molded body is kept in contact with the molded bodies, and antimony oxide is the main component. 1. A method for manufacturing a voltage nonlinear resistor element, characterized in that firing is performed in a state in which a compound is applied and arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55148766A JPS5772302A (en) | 1980-10-23 | 1980-10-23 | Method of producing voltage nonlinear resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55148766A JPS5772302A (en) | 1980-10-23 | 1980-10-23 | Method of producing voltage nonlinear resistance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5772302A JPS5772302A (en) | 1982-05-06 |
| JPS6161522B2 true JPS6161522B2 (en) | 1986-12-26 |
Family
ID=15460165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55148766A Granted JPS5772302A (en) | 1980-10-23 | 1980-10-23 | Method of producing voltage nonlinear resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5772302A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6398541U (en) * | 1986-12-15 | 1988-06-25 |
-
1980
- 1980-10-23 JP JP55148766A patent/JPS5772302A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6398541U (en) * | 1986-12-15 | 1988-06-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5772302A (en) | 1982-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1150306B2 (en) | Current/voltage non-linear resistor and sintered body therefor | |
| US3909327A (en) | Method for making a monolithic ceramic capacitor with silver bearing electrodes | |
| JPH0831616A (en) | Varistor and its manufacturing method | |
| JPS6161522B2 (en) | ||
| JPS6161523B2 (en) | ||
| JPS6253922B2 (en) | ||
| JPS6248881B2 (en) | ||
| JPS6243324B2 (en) | ||
| JPS6015125B2 (en) | Firing method for voltage nonlinear resistance element | |
| JPS6320004B2 (en) | ||
| JPS6015126B2 (en) | Manufacturing method of voltage nonlinear resistor element | |
| JPS6161687B2 (en) | ||
| JPS622686B2 (en) | ||
| JPS6237525B2 (en) | ||
| JPS6156844B2 (en) | ||
| JPS626322B2 (en) | ||
| JPH05312480A (en) | Ceramic baking bowl | |
| JPS6015128B2 (en) | Manufacturing method of voltage nonlinear resistor element | |
| JPS6025008B2 (en) | Firing method for voltage nonlinear resistor element | |
| JPH036801A (en) | Voltage-dependent nonlinear resistor | |
| JP2522522B2 (en) | Non-linear resistor manufacturing method | |
| JP2619129B2 (en) | Method for manufacturing voltage non-linear resistor and sagger used for the same | |
| JPH0935909A (en) | Non-linear resistor manufacturing method | |
| JPS6236609B2 (en) | ||
| JPS6236610B2 (en) |