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JPS6320004B2 - - Google Patents
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JPS6320004B2 - - Google Patents

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Publication number
JPS6320004B2
JPS6320004B2 JP57020490A JP2049082A JPS6320004B2 JP S6320004 B2 JPS6320004 B2 JP S6320004B2 JP 57020490 A JP57020490 A JP 57020490A JP 2049082 A JP2049082 A JP 2049082A JP S6320004 B2 JPS6320004 B2 JP S6320004B2
Authority
JP
Japan
Prior art keywords
pedestal
diameter
zinc oxide
firing
resistor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57020490A
Other languages
Japanese (ja)
Other versions
JPS58138003A (en
Inventor
Masao Hayashi
Noriaki Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP57020490A priority Critical patent/JPS58138003A/en
Publication of JPS58138003A publication Critical patent/JPS58138003A/en
Publication of JPS6320004B2 publication Critical patent/JPS6320004B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

この発明はZnOを主成分とする非直線抵抗素子
の側面絶縁被膜形成装置に関する。 従来、この種のZnOを主成分とする非直線抵抗
素子(以下素子と呼ぶ)の側面絶縁被膜形成装置
としては、焼成後素子側面にエポキシ系有機物を
塗布して絶縁するか、或いは素子の焼成前に種々
の無機化合物を素子側面に塗布後焼成し、焼成後
ガラス質または結晶質の絶縁物となる絶縁被膜体
を形成させて絶縁していた。 しかし、前者の手段においては、塗布するエポ
キシ系有機物と素子本体との密着性が悪く、この
ため、素子に水分が吸着され特性劣化が大きく短
波尾耐量も弱くなる欠点がある。また素子本体と
エポキシ樹脂との間に熱膨張の差があるため、熱
衝撃で素子側面に被覆されたエポキシ樹脂にクラ
ツクが入り劣化の原因となる欠点がある。また、
後者の手段においては、焼成時に素子本体と側面
絶縁剤の収縮率を一致させる必要がある。このた
め1次焼成して或る程度圧縮成形素子を収縮さ
せ、しかる後に、無機化合物又はそれらの混合物
を一次焼成素子側面に塗布して本焼成し無機質絶
縁側面被膜を形成させている。この場合、2回に
分けて焼成するので、燃料(電力を含む)費と焼
成装置を2回使用するので製造コストが上昇する
欠点がある。また両者の手段とも側面絶縁膜を必
要厚に均一にするためには、相当の技術と装置を
要する欠点がある。 しかし、近年、焼成に用いる容器内にアンチモ
ン酸化物(Sb2O3)を入れ、同容器内に素子を収
容して素子の焼成と同時にそれに側面絶縁被膜を
形成させる技術的手段が開発された。このような
手段では容器内に台座を配し、その台座に敷粉を
介して素子が載置される構成をとつている。とこ
ろが、このような構成で上述のように素子の焼成
と同時にそれに絶縁被膜を形成させると台座と素
子との関係から次のような不具合が素子の側面絶
縁被膜に生じる。すなわち、昇温中の素子は第1
図に示すように800℃〜1000℃において、急激に
収縮される。また、容器内のSb2O3は一般に920
℃付近より昇華が始まつて、Sb2O3蒸気となつて
素子表面に絶縁被膜が形成される。この被膜形成
時、素子の径より台座の径が小さいと、素子の一
部が台座からはみ出すために、そのはみ出し部分
とSb2O3蒸気との反応が過多となる。このため、
第2図に示すように素子1の絶縁被膜層2の素子
円周部(はみ出し部分)1aに膨れ部3が生じ
る。この膨れ部は図示しないが素子1の上部にも
反応過多のために生じることがある。上記素子1
の下部に生じた膨れ部3および素子1の上部に生
じた膨れ部は素子取扱い時に損傷させてしまうお
それがあるとともに、膨れ部3が大きいとその内
部に気孔4が形成され、素子との密着性が低下す
る欠点となる。 この発明は上記の事情に鑑みてなされたもの
で、ピンホールのない緻密で均一の結晶粒を持
ち、素子本体との密着性が良く、かつ膨れが生じ
ない絶縁被膜体を形成することができる酸化亜鉛
非直線抵抗体素子の側面絶縁被膜形成装置を提供
することを目的とする。 以下図面を参照してこの発明の一実施例を説明
する。 第3図において、アルミナ質の鞘(焼成用容
器)12の底に耐熱性セラミツク材から成る凹状
に形成された台座14が載置される。この台座1
4の内底面15上には敷粉16の層を介して、圧
縮成形された素子18を設置する。このとき、台
座14の内径は素子18の径よりも図示のように
数mmから数十mm以上大きくする。また台座14の
端部の突出体17は内底面15より数mmから数十
mmまで以内に形成する。一方、前記素子18の上
面には素子と反応しにくい部材で形成された円板
体19を載置する。この円板体19の径は素子1
8の径より2mm以上大きくする。なお、敷粉16
は台座14と素子18の溶着を防ぐものである。
また鞘12の内側面には素子18に側面絶縁被膜
を形成させるための塗布剤20が塗布されてい
る。鞘12の上部には鞘12と同質性の蓋22が
設けられている。 台座14の材質はアルミナ質又は酸化亜鉛系焼
結板等が良く、特に酸化亜鉛系焼結板は素子の主
成分と同質なので焼結された素子の特性を損ねる
恐れがなく望ましい。敷粉16はアルミナ質や
ZnO素子の造粉末分又はZnO素子を仮焼して砕い
た粉等が用いられている。ZnO素子の成分に類似
又は同質のものが台座の場合よりも強く要求され
る。なお、台座14に素子18と同質系のものを
用いた場合は敷粉16がなくても良い。また側面
絶縁被膜を形成させる塗布剤20は鞘12の内面
の一部又は全面、及び蓋22の底面に塗布しても
良い。 次に、この発明の酸化亜鉛非直線抵抗素子の焼
結及びその側面絶縁被膜を形成させる手段を述べ
る。 先ず素子18は、ZnO(91重量%)にSb2O3
Bi2O3、CO2O3、Cr2O3、MnO2、SiO2等合計(9
重量%)の混合物を加え、充分混合した後適当な
形状に圧縮成形する。例えば直径40mmφ、厚さ約
30mmの円柱形にして成形体とする。塗布剤20
は、出発原料としてSb2O3、Sb2O4、Sb2O5のう
ち少なくとも1つ以上を含むアンチモン酸化物
を、水でもつてスラリーとして鞘12の内側面に
塗布し乾燥させる。 このように塗布剤20を塗布した鞘12内に成
形体状をした素子18を入れ蓋22をしてほぼ密
閉状態にする。 この密閉状態で1000℃〜1400℃(素子の電気特
性の点からは1100℃〜1300℃が好ましい。)の温
度範囲で焼成すると、鞘12内の塗布剤20であ
るアンチモン酸化物が昇華し、容器内はアンチモ
ン酸化物の雰囲気となり、素子18表面のZnO、
Bi2O3等と固一気相反応し素子18の表面に高抵
抗の絶縁被膜が形成される。 上記の固一気相反応において、酸化アンチモン
のうちSb2O3は約570℃でSb2O4に、Sb2O5は357
℃以上でSb2O4になる。形成されたSb2O4は920℃
付近より昇華し始め1000℃以上では非常に活発に
なり、鞘12内は酸化アンチモンの雰囲気とな
る。 一方素子18は800℃〜1000℃の温度領域で体
積比で約40%収縮しZnOの他、Zn2SiO4、パイロ
クロア、Zn2Bi3Sb3O4、Zn2.33Sb0.67O4
14Bi2O3・Cr2O3等の結晶相が形成される。素子
18表面では容器内に発生した酸化アンチモンと
素子18内から拡散してくるZn2+と反応し、素
子表面にZn2.33Sb0.67O4が形成され素子18と共
に焼結される。 上記のようにして形成された絶縁被膜におい
て、特に素子18の図示下部の円周部18a表面
には、凹状の台座14の内径が素子18の径より
も大きくしてあることと突出体17があるため
に、素子表面とSb2O3蒸気との反応が円滑に行な
われるようになり、従来のような反応過多を起さ
なくなつて均一な絶縁被膜が得られる。一方、素
子18の上部も円板体19があるため、従来のよ
うな反応過多を起さないで均一な絶縁被膜が形成
される。 次に従来の場合とこの発明の実施例によつて形
成された抵抗素子の4×10μs電流波形による放電
耐量の実験を次表に掲げる。
The present invention relates to an apparatus for forming a side insulating film of a nonlinear resistance element whose main component is ZnO. Conventionally, the side insulating film forming apparatus for this type of non-linear resistance element (hereinafter referred to as an element) whose main component is ZnO has been to apply an epoxy-based organic material to the side surface of the element for insulation after firing, or to insulate the side surface of the element after firing. Previously, various inorganic compounds were applied to the side surfaces of the device and then fired, and after firing, an insulating coating was formed that became a glassy or crystalline insulator for insulation. However, the former method has the disadvantage that the adhesion between the applied epoxy-based organic substance and the element body is poor, and as a result, moisture is adsorbed to the element, resulting in significant deterioration of characteristics and weakening of short-wave tail resistance. Furthermore, since there is a difference in thermal expansion between the element body and the epoxy resin, there is a drawback that thermal shock can cause cracks in the epoxy resin coated on the side surfaces of the element, causing deterioration. Also,
In the latter method, it is necessary to match the shrinkage rates of the element body and the side insulating material during firing. For this purpose, the compression-molded element is first fired to shrink it to some extent, and then an inorganic compound or a mixture thereof is applied to the side surface of the first fired element and then main fired to form an inorganic insulating side surface coating. In this case, since the firing is performed in two steps, there is a drawback that the fuel (including electricity) cost and the firing device are used twice, which increases the manufacturing cost. Furthermore, both methods have the disadvantage that considerable technology and equipment are required to make the side insulating film uniform to the required thickness. However, in recent years, a technological method has been developed in which antimony oxide (Sb 2 O 3 ) is placed in the container used for firing, and the element is housed in the same container to form a side insulating coating on the element at the same time as the element is fired. . In this type of means, a pedestal is disposed within the container, and the element is placed on the pedestal via a bedding material. However, in such a structure, when an insulating film is formed on the element at the same time as the element is fired as described above, the following problems occur in the insulating film on the sides of the element due to the relationship between the pedestal and the element. In other words, the element whose temperature is being increased is
As shown in the figure, it contracts rapidly at 800°C to 1000°C. Also, Sb2O3 in the container is generally 920
Sublimation begins at around ℃ and turns into Sb 2 O 3 vapor, forming an insulating film on the surface of the element. When forming this film, if the diameter of the pedestal is smaller than the diameter of the element, a portion of the element protrudes from the pedestal, resulting in excessive reaction between the protruding portion and the Sb 2 O 3 vapor. For this reason,
As shown in FIG. 2, a bulge 3 is formed in the element circumferential portion (protruding portion) 1a of the insulating coating layer 2 of the element 1. Although not shown, this bulge may also occur in the upper part of the element 1 due to excessive reaction. The above element 1
The bulge 3 formed at the bottom of the element 1 and the bulge formed at the upper part of the element 1 may damage the element during handling.If the bulge 3 is large, pores 4 are formed inside the bulge 3, which prevents close contact with the element. This is a disadvantage of decreasing performance. This invention was made in view of the above circumstances, and it is possible to form an insulating coating that has dense and uniform crystal grains without pinholes, has good adhesion to the element body, and does not cause swelling. An object of the present invention is to provide a side insulation coating forming apparatus for a zinc oxide nonlinear resistor element. An embodiment of the present invention will be described below with reference to the drawings. In FIG. 3, a recessed pedestal 14 made of a heat-resistant ceramic material is placed on the bottom of an alumina sheath (firing container) 12. This pedestal 1
A compression-molded element 18 is placed on the inner bottom surface 15 of 4 with a layer of bedding powder 16 interposed therebetween. At this time, the inner diameter of the pedestal 14 is made larger than the diameter of the element 18 by several mm to several tens of mm or more as shown in the figure. In addition, the protruding body 17 at the end of the pedestal 14 is from several mm to several tens of mm from the inner bottom surface 15.
Form within mm. On the other hand, a disk body 19 made of a material that does not easily react with the element is placed on the upper surface of the element 18. The diameter of this disk body 19 is
Make it 2 mm or more larger than the diameter of 8. In addition, bed powder 16
This prevents welding of the base 14 and the element 18.
Further, a coating agent 20 is applied to the inner surface of the sheath 12 to form a side insulation coating on the element 18. The top of the sheath 12 is provided with a lid 22 that is homogeneous to the sheath 12. The material of the pedestal 14 is preferably alumina or a zinc oxide sintered plate. In particular, a zinc oxide sintered plate is preferable since it is of the same quality as the main component of the element and does not impair the characteristics of the sintered element. Bed powder 16 is made of alumina.
A powder made from a ZnO element or powder obtained by calcining and crushing a ZnO element is used. A component similar or the same as that of the ZnO element is required more strongly than in the case of the pedestal. Note that if the pedestal 14 is made of the same material as the element 18, the bedding powder 16 may be omitted. Further, the coating agent 20 for forming the side insulation coating may be applied to a part or the entire inner surface of the sheath 12 and the bottom surface of the lid 22. Next, a method for sintering the zinc oxide nonlinear resistance element of the present invention and forming an insulating coating on its side surfaces will be described. First, the element 18 is made of ZnO (91% by weight), Sb 2 O 3 ,
Total of Bi 2 O 3 , CO 2 O 3 , Cr 2 O 3 , MnO 2 , SiO 2 etc. (9
% by weight) is added, thoroughly mixed, and then compression molded into a suitable shape. For example, diameter 40mmφ, thickness approx.
Shape into a 30 mm cylinder to form a compact. Coating agent 20
In this method, an antimony oxide containing at least one of Sb 2 O 3 , Sb 2 O 4 , and Sb 2 O 5 as a starting material is applied as a slurry with water to the inner surface of the sheath 12 and dried. The element 18 in the form of a molded body is placed in the sheath 12 coated with the coating agent 20 in this manner, and the lid 22 is placed on the sheath 12 to create a substantially airtight state. When fired in this sealed state at a temperature range of 1000°C to 1400°C (1100°C to 1300°C is preferred from the viewpoint of the electrical characteristics of the device), the antimony oxide that is the coating agent 20 in the sheath 12 sublimates. The inside of the container becomes an atmosphere of antimony oxide, and ZnO on the surface of the element 18,
A high-resistance insulating film is formed on the surface of the element 18 through a solid-gas phase reaction with Bi 2 O 3 and the like. In the above solid-gas phase reaction, Sb 2 O 3 of antimony oxide changes to Sb 2 O 4 at about 570°C, and Sb 2 O 5 changes to 357
It becomes Sb 2 O 4 at temperatures above ℃. The formed Sb 2 O 4 is 920℃
It begins to sublimate from the vicinity and becomes extremely active at temperatures above 1000°C, creating an atmosphere of antimony oxide inside the sheath 12. On the other hand, element 18 shrinks by about 40% by volume in the temperature range of 800°C to 1000°C, and contains ZnO, Zn 2 SiO 4 , pyrochlore, Zn 2 Bi 3 Sb 3 O 4 , Zn 2.33 Sb 0.67 O 4 ,
Crystal phases such as 14Bi 2 O 3 and Cr 2 O 3 are formed. On the surface of the element 18, antimony oxide generated in the container reacts with Zn 2+ diffused from inside the element 18, and Zn 2.33 Sb 0.67 O 4 is formed on the element surface and sintered together with the element 18. In the insulating coating formed as described above, the inner diameter of the concave pedestal 14 is larger than the diameter of the element 18 and the protruding body 17 is particularly formed on the surface of the circumferential portion 18a of the lower part of the element 18 as shown in the figure. Because of this, the reaction between the element surface and the Sb 2 O 3 vapor occurs smoothly, and a uniform insulating film can be obtained without excessive reaction as in the conventional case. On the other hand, since the disk body 19 is also present on the upper part of the element 18, a uniform insulating film can be formed without causing excessive reactions as in the conventional case. Next, the following table shows an experiment of the discharge withstand capacity using a 4×10 μs current waveform of a resistor element formed in a conventional case and an embodiment of the present invention.

【表】 また、台座14の内径と素子18の直径の差が
放電耐量に与える影響の実験例を次表に掲げる。
[Table] In addition, the following table shows an experimental example of the influence of the difference between the inner diameter of the pedestal 14 and the diameter of the element 18 on the discharge withstand capacity.

【表】 なお、上記実施例において、Sb2O3の蒸発温
度、速度はSb2O3とともに敷く粉の組成や配合に
より変化する。また素子の収縮は組成、配合、成
形圧力、仮焼条件、焼成条件に変化する。これら
のことから台座14の内径および突出体17の高
さは適当な大きさに選択する。また、台座14の
突出体17は第4図のように形成してもよい。 以上述べたようにこの発明によれば、酸化亜鉛
非直線抵抗素体の径よりもそれを載置する凹状の
台座の内径を大きく形成するとともに台座端部に
所定長の突出体があり、かつ素体の上部に円板体
を設けたので、素子表面とSb2O3蒸気とによる反
応が素子下部円周部分および上部円周部分におい
ても円滑に行なわれ、均一な絶縁被膜が素子には
形成され、従来のような膨れ部の発生を抑止でき
る利点がある。
[Table] In the above examples, the evaporation temperature and speed of Sb 2 O 3 vary depending on the composition and formulation of the powder spread together with Sb 2 O 3 . Furthermore, the shrinkage of the element changes depending on the composition, formulation, molding pressure, calcination conditions, and firing conditions. From these considerations, the inner diameter of the pedestal 14 and the height of the protrusion 17 are selected to be appropriate sizes. Further, the protrusion 17 of the pedestal 14 may be formed as shown in FIG. 4. As described above, according to the present invention, the inner diameter of the concave pedestal on which the zinc oxide nonlinear resistance element is placed is larger than the diameter of the zinc oxide nonlinear resistance element, and a protrusion of a predetermined length is provided at the end of the pedestal, and Since the disk body is provided on the top of the element, the reaction between the element surface and the Sb 2 O 3 vapor occurs smoothly in the lower and upper circumferential parts of the element, and a uniform insulating coating is formed on the element. This has the advantage of being able to prevent the formation of bulges as in the conventional case.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は酸化亜鉛非直線抵抗素体の温度に対す
る収縮率を示す特性曲線図、第2図は素体下部の
絶縁被膜に膨れ部が生じた状態を示す説明図、第
3図はこの発明の一実施例を示す一部断面正面
図、第4図は台座の異なる例を示す正面図であ
る。 12……鞘(焼成用容器)、14……台座、1
6……敷粉、17……突出体、18……素子、1
8a……円周部、19……円板体、20……塗布
剤、22……蓋。
Fig. 1 is a characteristic curve diagram showing the shrinkage rate with respect to temperature of the zinc oxide nonlinear resistance element, Fig. 2 is an explanatory diagram showing a state in which a bulge is formed in the insulating coating at the bottom of the element, and Fig. 3 is an illustration of the present invention. FIG. 4 is a partially sectional front view showing one embodiment of the present invention, and FIG. 4 is a front view showing a different example of the pedestal. 12... Sheath (container for firing), 14... Pedestal, 1
6...Bedding powder, 17...Protruding body, 18...Element, 1
8a... Circumference part, 19... Disc body, 20... Coating agent, 22... Lid.

Claims (1)

【特許請求の範囲】[Claims] 1 焼成容器内に配置される台座と、この台座上
に敷粉を介して載置される酸化亜鉛を含む非直線
抵抗素体と、前記焼成容器内の所定個所に配置さ
れるアンチモン酸化物とを備え、前記抵抗素体の
焼成時と同時に気一固相反応により抵抗素体の側
面絶縁被膜を形成するようにした酸化亜鉛非直線
抵抗体素子の製造装置において、台座を凹形状に
形成し、その台座の内径を前記非直線抵抗素体の
径より大きく形成するとともに、その台座端部の
突出体を台座内底面より所定長突出させ、かつ前
記素体の上部に素体と反応しにくい部材で形成さ
れた素体の径より大きい円板体を載置させたこと
を特徴とする酸化亜鉛非直線抵抗体素子の側面絶
縁被膜形成装置。
1. A pedestal placed in the firing container, a non-linear resistance element containing zinc oxide placed on the pedestal via a bed of powder, and antimony oxide placed at a predetermined location in the firing container. In the zinc oxide nonlinear resistor element manufacturing apparatus, the pedestal is formed in a concave shape, and the pedestal is formed in a concave shape, and the side insulating coating of the resistor element is formed by gas-solid phase reaction simultaneously with the firing of the resistor element. , the inner diameter of the pedestal is formed to be larger than the diameter of the non-linear resistance element, the protrusion at the end of the pedestal is made to protrude from the inner bottom surface of the pedestal by a predetermined length, and the upper part of the element is difficult to react with the element. 1. A side insulation coating forming apparatus for a zinc oxide non-linear resistor element, characterized in that a disk body having a diameter larger than the diameter of an element body formed of a member is placed thereon.
JP57020490A 1982-02-10 1982-02-10 Side face insulating film forming device for zinc oxide nonlinear resistance element Granted JPS58138003A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57020490A JPS58138003A (en) 1982-02-10 1982-02-10 Side face insulating film forming device for zinc oxide nonlinear resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57020490A JPS58138003A (en) 1982-02-10 1982-02-10 Side face insulating film forming device for zinc oxide nonlinear resistance element

Publications (2)

Publication Number Publication Date
JPS58138003A JPS58138003A (en) 1983-08-16
JPS6320004B2 true JPS6320004B2 (en) 1988-04-26

Family

ID=12028584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57020490A Granted JPS58138003A (en) 1982-02-10 1982-02-10 Side face insulating film forming device for zinc oxide nonlinear resistance element

Country Status (1)

Country Link
JP (1) JPS58138003A (en)

Also Published As

Publication number Publication date
JPS58138003A (en) 1983-08-16

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