JPS6244437B2 - - Google Patents
Info
- Publication number
- JPS6244437B2 JPS6244437B2 JP13493382A JP13493382A JPS6244437B2 JP S6244437 B2 JPS6244437 B2 JP S6244437B2 JP 13493382 A JP13493382 A JP 13493382A JP 13493382 A JP13493382 A JP 13493382A JP S6244437 B2 JPS6244437 B2 JP S6244437B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- current
- comparison amplifier
- output
- current control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 8
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Description
【発明の詳細な説明】
本発明は、イオンレーザ装置、特にレーザ出力
を安定化させるためにレーザ管の放電電流の安定
化図つたイオンレーザ装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ion laser device, and particularly to an ion laser device in which discharge current of a laser tube is stabilized in order to stabilize laser output.
従来この種のイオンレーザ装置は、レーザ管内
のガスをイオン化するため大電流アーク放電させ
る、またレーザ出力は放電電流の２〜４乗に比例
して変動するため、放電電流の安定化は不可欠で
ある。 Conventionally, this type of ion laser device uses a large current arc discharge to ionize the gas inside the laser tube, and the laser output fluctuates in proportion to the second to fourth power of the discharge current, so stabilizing the discharge current is essential. be.
従来のこの種のイオンレーザ装置では、第１図
に示すように、ダイオード整流回路１の負極をヒ
ータトランス４を通して、レーザ管１０のカソー
ド１３に接続し、正極をチヨークコイル２、電流
制御用トランジスタ５、電流検出抵抗６、トリガ
回路９を通してレーザ管１０のアノード１２に接
続する。通常定電流状態では、基準電源８の基準
電圧ＶS1と電流検出抵抗６の出力電圧ＶO1との差
電圧を比較増幅器７で増幅し、電流制御用トラン
ジスタ５のベースに供給し、差電圧が０になるよ
うに制御している。ここでダイオード整流回路１
の入力電圧の上昇やレーザ管１０の管内電圧が降
下した場合、電流制御用トランジスタ５のコレク
タ・エミツタ間電圧（負担電圧）は増加する、ま
た電流制御用トランジスタ５は第２図１４曲線の
ようなASO曲線であるため、使用状態では第２
図１５曲線のようによゆうをみる必要がある。そ
こで電流制御用トランジスタ５を大電流、高耐圧
とするためにトランジスタを数10個並列接続する
方式をとつている。そのため、電流制御用トラン
ジスタ５は大型、高価となり、重量も重くなる。 In a conventional ion laser device of this kind, as shown in FIG. , a current detection resistor 6, and a trigger circuit 9 to the anode 12 of the laser tube 10. In a normal constant current state, the difference voltage between the reference voltage V S1 of the reference power supply 8 and the output voltage V O1 of the current detection resistor 6 is amplified by the comparator amplifier 7 and supplied to the base of the current control transistor 5, so that the difference voltage is It is controlled so that it becomes 0. Here, diode rectifier circuit 1
When the input voltage of the laser tube 10 increases or the tube voltage of the laser tube 10 decreases, the collector-emitter voltage (burden voltage) of the current control transistor 5 increases. Since the ASO curve is
It is necessary to take a closer look like the curve in Figure 15. Therefore, in order to make the current control transistor 5 have a large current and a high withstand voltage, a method is used in which several dozen transistors are connected in parallel. Therefore, the current control transistor 5 becomes large, expensive, and heavy.
本発明の目的は、電流制御用トランジスタ５の
負担電圧を規定値以下に制御し、電流制御用トラ
ンジスタの数を減らし、小型、安価、軽量なイオ
ンレーザ装置を提供することにある。 An object of the present invention is to provide an ion laser device that is small, inexpensive, and lightweight by controlling the voltage burden on the current control transistor 5 to be below a specified value and reducing the number of current control transistors.
以下、第３図に例示した実施例について本発明
を具体的に説明する。サイリスタ整流回路２１の
負極をヒータトランス４を通して、レーザ管１０
のカソード１３に接続し、正極をチヨークコイル
２、電流制御用トランジスタ５、電流検出抵抗
６、トリガ回路９を通して、レーザ管１０のアノ
ード１２に接続する、また電流制御用トランジス
タ５のコレクタ、エミツタ間に並列に直列接続し
た抵抗２０，１９を接続し、抵抗２０，１９の接
続点を比較増幅器１６に接続する、前記比較増幅
器１６には基準電源１８も接続する、前記比較増
幅器１６の出力端をサイリスタ制御回路１７に接
続し、サイリスタ制御回路１７の出力端ａ，ｂ，
ｃ，a′，b′，c′，をサイリスタ整流回路２１の
ａ，ｂ，ｃ，a′，b′，c′に接続する。通常定電流
状態では基準電源８の基準電圧ＶSと電流検出抵
抗６の出力電圧ＶO1との差電圧を比較増幅器７で
増幅し、電流制御用トランジスタ５のベースに供
給し、差電圧が０になるように制御している。こ
こでサイリスタ整流回路２１の入力電圧の上昇や
レーザ管１０の管内電圧が降下し、電流制御用ト
ランジスタ５のコレクタ・エミツタ間電圧が規定
値を越えると、抵抗１９の出力電圧ＶO2が基準電
源１８の出力電圧ＶS2より増加し、比較増幅器１
６の出力電圧を減少させ、サイリスタ制御回路１
７の出力により、サイリスタ整流回路２１の出力
電圧を減少させ、電流制御用トランジスタ５の負
担電圧を規定値以下に保持する。よつて電流制御
用トランジスタ５は数個有れば良く、重量を1/10
程度に軽減でき、小型、安価となる。また、入力
電圧が過大となつても制御用トランジスタ５を破
損することも防止できる。 The present invention will be specifically described below with reference to the embodiment illustrated in FIG. Pass the negative electrode of the thyristor rectifier circuit 21 through the heater transformer 4 and connect it to the laser tube 10.
The positive electrode is connected to the anode 12 of the laser tube 10 through the choke coil 2, the current control transistor 5, the current detection resistor 6, and the trigger circuit 9. Also, the connection is made between the collector and emitter of the current control transistor 5. Resistors 20 and 19 connected in parallel in series are connected, and the connection point of the resistors 20 and 19 is connected to a comparison amplifier 16. A reference power supply 18 is also connected to the comparison amplifier 16. The output end of the comparison amplifier 16 is connected to a thyristor. Connected to the control circuit 17, the output terminals a, b, of the thyristor control circuit 17
c, a', b', c' are connected to a, b, c, a', b', c' of the thyristor rectifier circuit 21. Normally, in a constant current state, the difference voltage between the reference voltage V S of the reference power supply 8 and the output voltage V O1 of the current detection resistor 6 is amplified by the comparator amplifier 7 and supplied to the base of the current control transistor 5, so that the difference voltage becomes 0. It is controlled so that If the input voltage of the thyristor rectifier circuit 21 increases or the tube voltage of the laser tube 10 decreases, and the voltage between the collector and emitter of the current control transistor 5 exceeds the specified value, the output voltage V O2 of the resistor 19 becomes the reference voltage. 18 output voltage V S2 increases from comparison amplifier 1
6, the thyristor control circuit 1
7 reduces the output voltage of the thyristor rectifier circuit 21 and maintains the burden voltage of the current control transistor 5 below a specified value. Therefore, it is sufficient to have several current control transistors 5, and the weight can be reduced to 1/10.
It can be reduced to a certain extent, and is small and inexpensive. Furthermore, even if the input voltage becomes excessive, damage to the control transistor 5 can be prevented.
第１図は、従来のイオンレーザ装置を示すブロ
ツク図、第２図は電流制御素子のASO曲線の一
例、第３図は本発明の一実施例を示すブロツク図
である。
１……ダイオード整流回路、２……チヨークコ
イル、３……コンデンサ、４……ヒータトラン
ス、５……電流制御素子（電流制御用トランジス
タ）、６……電流検出抵抗、７……第１の比較増
幅器、８，１８……基準電源、９……トリガ回
路、１０……レーザ管、１１，１１′……光共振
器、１２……アノード、１３……カソード、１６
……第２の比較増幅器、１７……サイリスタ制御
回路、１９，２０……電圧検出抵抗、２１……サ
イリスタ整流回路、２２……レーザ光。
FIG. 1 is a block diagram showing a conventional ion laser device, FIG. 2 is an example of an ASO curve of a current control element, and FIG. 3 is a block diagram showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Diode rectifier circuit, 2... Chiyoke coil, 3... Capacitor, 4... Heater transformer, 5... Current control element (current control transistor), 6... Current detection resistor, 7... First comparison Amplifier, 8, 18... Reference power supply, 9... Trigger circuit, 10... Laser tube, 11, 11'... Optical resonator, 12... Anode, 13... Cathode, 16
... second comparison amplifier, 17 ... thyristor control circuit, 19, 20 ... voltage detection resistor, 21 ... thyristor rectifier circuit, 22 ... laser light.
Claims (1)
を供給するためのサイリスタ整流回路と、前記レ
ーザ管の放電電流回路に挿入された電流検出抵抗
の出力電圧と基準電源からの基準電圧を入力とす
る第１の比較増幅器と、前記放電電流回路に挿入
され前記第１の比較増幅器の出力により制御され
る電流制御素子と、前記電流制御素子の負担電圧
を検出する電圧検出抵抗の出力電圧と基準電源か
らの基準電圧を入力とする第２の比較増幅器と、
前記比較増幅器の出力により前記サイリスタ整流
回路を制御するサイリスタ制御回路とを具備する
ことを特徴とするイオンレーザ装置。1 Inputs a laser tube, a thyristor rectifier circuit for supplying power to discharge the laser tube, the output voltage of a current detection resistor inserted in the discharge current circuit of the laser tube, and a reference voltage from a reference power source. a first comparison amplifier; a current control element inserted into the discharge current circuit and controlled by the output of the first comparison amplifier; and an output voltage and a reference power source of a voltage detection resistor that detects the burden voltage of the current control element. a second comparison amplifier inputting the reference voltage from the
An ion laser device comprising: a thyristor control circuit that controls the thyristor rectifier circuit based on the output of the comparison amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13493382A JPS5925289A (en) | 1982-08-02 | 1982-08-02 | Ion laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13493382A JPS5925289A (en) | 1982-08-02 | 1982-08-02 | Ion laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5925289A JPS5925289A (en) | 1984-02-09 |
| JPS6244437B2 true JPS6244437B2 (en) | 1987-09-21 |
Family
ID=15139949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13493382A Granted JPS5925289A (en) | 1982-08-02 | 1982-08-02 | Ion laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5925289A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04299824A (en) * | 1991-03-28 | 1992-10-23 | Sharp Corp | Liquid phase epitaxial growth method |
-
1982
- 1982-08-02 JP JP13493382A patent/JPS5925289A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04299824A (en) * | 1991-03-28 | 1992-10-23 | Sharp Corp | Liquid phase epitaxial growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5925289A (en) | 1984-02-09 |
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