JPS6314494B2 - - Google Patents
Info
- Publication number
- JPS6314494B2 JPS6314494B2 JP57019098A JP1909882A JPS6314494B2 JP S6314494 B2 JPS6314494 B2 JP S6314494B2 JP 57019098 A JP57019098 A JP 57019098A JP 1909882 A JP1909882 A JP 1909882A JP S6314494 B2 JPS6314494 B2 JP S6314494B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- mold
- ultraviolet
- molding
- transparent resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/016—Manufacture or treatment using moulds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
本発明は樹脂封止型半導体装置の製造方法に係
り、特に紫外線消去型書換え可能読出し専用記憶
装置(以下UV−EP−ROMと称す)の製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a resin-sealed semiconductor device, and particularly to a method of manufacturing an ultraviolet erasable rewritable read-only storage device (hereinafter referred to as UV-EP-ROM).
UV−EP−ROMは、紫外線を半導体素子に照
射することによつて半導体素子に記憶された内容
(電荷)が放電され消去し得ることを特徴とする。
したがつて、かかる容器においては半導体素子の
上方(能動側)は紫外線を透過する材料で構成さ
れていなければならない。 UV-EP-ROM is characterized in that the contents (charges) stored in the semiconductor element can be discharged and erased by irradiating the semiconductor element with ultraviolet rays.
Therefore, in such a container, the area above the semiconductor element (active side) must be made of a material that transmits ultraviolet rays.
従来のUV−EP−ROMの容器は上記機能を満
すためにセラミツク等の絶縁基体で主要部を構成
し、半導体素子上方には紫外線透過性材料、例え
ばサフアイア、透過性アルミナで作られた窓を有
する気密封止型半導体装置が多用されていた。こ
の紫外線透過性材料は、非常に高価であり、かつ
気密封止するために、材料間の熱膨脹係数の整合
を図らなければならず、半導体装置の使用状態を
シユミレートした環状試験における気密性、耐機
械的衝撃性等においてしばしば問題を生じてい
た。そこで紫外線透過性樹脂を使用し価格的に安
価なものを得ようとした場合を考えてみると、紫
外線透過性樹脂は熱膨張係数が大きいため、半導
体装置全体に使用するには装置の信頼性上大きな
問題となる。つまりUV−EP−ROMを樹脂封止
型にするためには必要部分にのみ紫外線透過性樹
脂を使用し、他の部分は従来通りの樹脂を使用す
ることが必要とされる。したがつて半導体装置の
組立工程における封入工程以外の工程では従来通
りの方法で作製し得るが、樹脂封入工程のみは2
種の樹脂を各々必要な部分のみにまざらず充填し
一体とするという困難がある。また、部分的な封
入を行なつた場合にはリードフレームのボンデイ
ングフインガーの間を通つて樹脂が流れ出て不必
要な部分にまで流れ出る等の問題点もある。 In order to fulfill the above functions, the conventional UV-EP-ROM container has a main part made of an insulating substrate such as ceramic, and a window made of an ultraviolet-transparent material such as sapphire or transparent alumina above the semiconductor element. Hermetically sealed semiconductor devices have been widely used. This ultraviolet-transparent material is very expensive, and in order to achieve hermetic sealing, it is necessary to match the coefficient of thermal expansion between the materials. Problems often occurred in terms of mechanical impact resistance, etc. Therefore, if we consider the case of trying to obtain a product at a low price by using UV-transparent resin, since UV-transparent resin has a large coefficient of thermal expansion, it is difficult to use it for the entire semiconductor device due to the reliability of the device. This becomes a big problem. In other words, in order to make the UV-EP-ROM a resin-sealed type, it is necessary to use ultraviolet-transparent resin only in the necessary parts, and to use conventional resin in other parts. Therefore, steps other than the encapsulation process in the semiconductor device assembly process can be manufactured using conventional methods, but only the resin encapsulation process requires 2
There is a difficulty in filling only the necessary parts with each type of resin and integrating the resin into one piece. Furthermore, when partial encapsulation is performed, there are problems such as resin flowing out through the bonding fingers of the lead frame and flowing out to unnecessary parts.
本発明は係る欠点を除去し、改良された樹脂封
止型半導体装置の製造方法を提供するものであ
る。 The present invention eliminates such drawbacks and provides an improved method of manufacturing a resin-sealed semiconductor device.
本発明の要脂は、UV−EP−ROMを樹脂封止
する際、紫外線透過性樹脂によつて半導体素子表
面を覆うように充填し、かかる樹脂が完全に硬化
する前に、他の樹脂を成形型に注入し、全体とし
て硬化させることにある。 The essential feature of the present invention is that when encapsulating UV-EP-ROM with resin, the surface of the semiconductor element is filled with UV-transparent resin, and other resins are added before the resin is completely cured. It is poured into a mold and allowed to harden as a whole.
この様な製造方法を採用すれば、完成した半導
体装置は従来の半導体装置、例えばDIP形態と変
わりない形態となつて、互換性や取扱いに便宜で
ある。 If such a manufacturing method is adopted, the completed semiconductor device will have a form no different from a conventional semiconductor device, for example, a DIP form, which is convenient for compatibility and handling.
また、2種の異なつた性質の樹脂を、夫々の樹
脂の特性を考慮して成形することができ、一度に
成形してしまうことによる欠点を除去してより高
信頼の半導体装置とすることができる。 In addition, it is possible to mold two types of resins with different properties, taking into consideration the characteristics of each resin, and it is possible to eliminate the drawbacks of molding them all at once, making it possible to create a more reliable semiconductor device. can.
以下、本発明を実施例に基づいて詳細に説明す
る。第1図は、本発明の第1の実施例である。リ
ードフレーム1にマウント、ボンデイングされた
半導体素子2上に、紫外線透過性樹脂3をポツテ
ングする。ポツテングされた樹脂3は第1図Aに
示すように小山状になる。リードフレームのボン
デイングフインガー部等の間隙から樹脂が流れ出
ないように、ゴム、樹脂等の薄膜(図示せず)を
リードフレームの裏面に密着させておくことが効
果的である。これらは、ポツテング後に取り除け
る様になつていてもよいし、後の成形において、
本体の樹脂内に残留する態様であつてもよい。 Hereinafter, the present invention will be explained in detail based on examples. FIG. 1 shows a first embodiment of the invention. An ultraviolet-transparent resin 3 is potted onto a semiconductor element 2 mounted and bonded to a lead frame 1. The potted resin 3 forms a mound as shown in FIG. 1A. It is effective to keep a thin film (not shown) of rubber, resin, etc. in close contact with the back surface of the lead frame to prevent the resin from flowing out from gaps such as bonding fingers of the lead frame. These may be removable after potting, or during subsequent molding.
The resin may remain in the resin of the main body.
ポツテングされた樹脂は、キユアされると徐々
に反応して硬化してくるが、その外形を維持でき
る程度に硬化した後成形型5内にセツトする。そ
の様子を第1図Bに示す。この様にすると、紫外
線透過性樹脂のポツテングされた頭部は成形型に
よつて若干おしつぶされた様になり、紫外線透過
性樹脂を少量で最大の表面積を得ることができる
とともに、かかる樹脂と成形型との接触部に成形
のための樹脂の侵入を避けることができる。 When the potted resin is cured, it gradually reacts and hardens, and is set in the mold 5 after being hardened to an extent that its outer shape can be maintained. The situation is shown in FIG. 1B. In this way, the potted head of the UV-transparent resin appears to be slightly crushed by the mold, and it is possible to obtain the maximum surface area with a small amount of UV-transparent resin, as well as Intrusion of resin for molding into the contact area between the mold and the mold can be avoided.
これは、成形後に成形樹脂の除去工程を省略で
きることになつて、よりコストの低い半導体装置
を得ることができる効果がある。 This has the effect that the step of removing the molding resin after molding can be omitted, and a semiconductor device with lower cost can be obtained.
さらに、紫外線透過性樹脂のキユア温度と成形
のための樹脂のキユア温度とが必ずしも一致せ
ず、同時に成形するとすれば両者の熱膨張係数が
整合しないため、ボンデイングワイヤーや半導体
素子に無用のストレスを加えることになつて、ル
ーズコンタクトやペレツト、クラツク等の原因と
なるところ、本発明の如く、比較的熱膨張係数の
大きい紫外線透過性樹脂を成形のための樹脂が方
囲する如く硬化するので、紫外線透過性樹脂には
圧縮力を加える形式となつて、紫外線透過性樹脂
の膨張収縮を規制するとともに、成形のための樹
脂からの熱による引張力の影響を軽減することが
でき、より高信頼の半導体装置とすることができ
る。 Furthermore, the curing temperature of the UV-transparent resin and the curing temperature of the resin used for molding do not necessarily match, and if they are molded at the same time, the thermal expansion coefficients of both will not match, causing unnecessary stress on bonding wires and semiconductor elements. In addition, as in the present invention, the resin for molding is cured in such a way that it surrounds the ultraviolet-transparent resin, which has a relatively large coefficient of thermal expansion, which causes loose contacts, pellets, cracks, etc. By applying compressive force to the UV-transparent resin, it is possible to control the expansion and contraction of the UV-transparent resin and reduce the effects of tensile force due to heat from the resin for molding, making it more reliable. can be made into a semiconductor device.
ポツテング技術は従来の技術を用いることがで
き、この点においても、現行設備を有効に活用し
得ることになる。この実施例に用いられる紫外線
を透過する樹脂の例としては信越シリコーン社の
KJR−8030S、KJR−8650S等がある。その樹脂
中での紫外線がとどく距離は前者が7mmで後者が
1.5mmである。KJR−8030Sの場合は180〜200nm
の波長を出すオゾン線発生封体高圧水銀灯で出力
1.6kWのものを使用し13.5cmの距離から5〜10
〔sec〕照射、KJR−8650Sの場合は出力2.0kWの
上記水銀灯で10cmの距離から1〜2〔sec〕照射す
ると最初のポツテイングされた外形を維持できる
程度に硬化する。 Conventional potting technology can be used, and in this respect as well, existing equipment can be effectively utilized. An example of the resin that transmits ultraviolet light used in this example is Shin-Etsu Silicone Co., Ltd.
There are KJR-8030S, KJR-8650S, etc. The distance that ultraviolet rays travel in the resin is 7 mm for the former and 7 mm for the latter.
It is 1.5mm. 180-200nm for KJR-8030S
Output using an ozone ray generating sealed high pressure mercury lamp that emits wavelengths of
5-10 from a distance of 13.5cm using a 1.6kW one
[sec] irradiation, in the case of KJR-8650S, use the above mercury lamp with an output of 2.0 kW and irradiate for 1 to 2 [sec] from a distance of 10 cm to harden to the extent that the initial potted external shape can be maintained.
尚、完全硬化照射条件は、KJR−8030Sでは上
記条件下で30〔sec〕、KJR−8650Sの場合は上記
条件下で6〜10〔sec〕である。 The complete curing irradiation conditions are 30 [sec] under the above conditions for KJR-8030S, and 6 to 10 [sec] under the above conditions for KJR-8650S.
第2図は本発明の第2の実施例である。第2の
実施例においては、第1の実施例と異なり、ポツ
テングではなく、一定の成形型内で紫外線透過性
樹脂を硬化させる。この場合においても、該樹脂
は完全に硬化させてはならない。したがつて、使
用する成形型6は、通常の金型のほか成形型との
離形性を向上させるため、テフロンの如き材料に
よるコーテング層を設けておくとか、ゴムライニ
ングをしておくと良い。また、リードフレームの
ボンデイングフインガー部からの樹脂もれを防ぐ
ために、上型の締付部6′に耐熱性のゴム又はゴ
ムライニングを使用することも有効である。 FIG. 2 shows a second embodiment of the invention. In the second embodiment, unlike the first embodiment, the ultraviolet-transparent resin is cured in a fixed mold rather than in a pot. Even in this case, the resin must not be completely cured. Therefore, it is recommended that the mold 6 used be provided with a coating layer of a material such as Teflon or a rubber lining in order to improve the releasability from the mold as well as a normal mold. . Furthermore, in order to prevent resin leakage from the bonding finger portion of the lead frame, it is also effective to use heat-resistant rubber or rubber lining for the clamping portion 6' of the upper die.
第1の実施例では、ポツテングするため樹脂の
粘度管理を厳しくしなければならないのに対し、
成形型であれば、樹脂の粘度管理は厳格でなくて
もよく、かわりに管理容易な温度や時間で成形の
状態をコントロールすることができ、成形された
紫外線透過性樹脂の特性を活すことができる。次
に完全に硬化していない状態で、全体を成形する
ための成形型5内にセツテングすることは第1の
実施例の場合と同様であり、かつ、紫外線透過性
樹脂と成形型5との間に成形のための樹脂が侵入
しない効果も同様である。 In the first embodiment, the viscosity of the resin must be strictly controlled to avoid potting.
With a mold, there is no need to strictly control the viscosity of the resin; instead, the molding state can be controlled with easily controlled temperatures and times, and the characteristics of the molded UV-transparent resin can be utilized. Can be done. Next, setting the entire resin in the mold 5 for molding in a completely uncured state is the same as in the first embodiment, and the ultraviolet-transparent resin and the mold 5 are The same effect can be achieved by preventing the resin for molding from entering between the layers.
第1の実施例、第2の実施例において、共通す
る効果として、半硬化した紫外線透過性樹脂の表
面をフレネルレンズ状に成形して収光性を向上さ
せることができることもあげられる。 In the first embodiment and the second embodiment, a common effect is that the surface of the semi-cured ultraviolet-transparent resin can be molded into a Fresnel lens shape to improve light absorption.
第1図は本発明の第1の実施例を示す断面図、
第2図は本発明の第2の実施例を示す断面図であ
る。
ここに、1……リードフレーム、2……半導体
素子、3……紫外線透過性樹脂、4……全体を成
形する樹脂を充填すべき空胴、5……成形型、6
……紫外線透過性樹脂成形型、6′……締付部、
である。
FIG. 1 is a sectional view showing a first embodiment of the present invention;
FIG. 2 is a sectional view showing a second embodiment of the invention. Here, 1... Lead frame, 2... Semiconductor element, 3... Ultraviolet transparent resin, 4... Cavity to be filled with resin for molding the whole, 5... Molding mold, 6
...UV-transparent resin mold, 6'...tightening part,
It is.
Claims (1)
に設け、該紫外線透過性樹脂が完全に硬化せずそ
の外形を維持できる程度に熱硬化する工程と、こ
の状態でパツケージ外形を定める成形型に入れ成
形用の樹脂を該成形型内に充填して硬化する工程
とを有することを特徴とする樹脂封止型半導体装
置の製造方法。1. A step in which an ultraviolet-transparent resin is provided on at least a semiconductor element, and the ultraviolet-transparent resin is heat-cured to an extent that the outer shape can be maintained without being completely cured, and in this state, the package is placed in a mold that defines the outer shape of the package for molding. 1. A method for manufacturing a resin-sealed semiconductor device, comprising the steps of: filling a resin into the mold and curing the resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57019098A JPS58137219A (en) | 1982-02-09 | 1982-02-09 | Preparation of resin sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57019098A JPS58137219A (en) | 1982-02-09 | 1982-02-09 | Preparation of resin sealed type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58137219A JPS58137219A (en) | 1983-08-15 |
| JPS6314494B2 true JPS6314494B2 (en) | 1988-03-31 |
Family
ID=11989992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57019098A Granted JPS58137219A (en) | 1982-02-09 | 1982-02-09 | Preparation of resin sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58137219A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5541748A (en) * | 1978-09-18 | 1980-03-24 | Mitsubishi Electric Corp | Semiconductor memory device |
-
1982
- 1982-02-09 JP JP57019098A patent/JPS58137219A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58137219A (en) | 1983-08-15 |
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