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JPS6318908B2 - - Google Patents
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JPS6318908B2 - - Google Patents

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Publication number
JPS6318908B2
JPS6318908B2 JP7321881A JP7321881A JPS6318908B2 JP S6318908 B2 JPS6318908 B2 JP S6318908B2 JP 7321881 A JP7321881 A JP 7321881A JP 7321881 A JP7321881 A JP 7321881A JP S6318908 B2 JPS6318908 B2 JP S6318908B2
Authority
JP
Japan
Prior art keywords
serial
temporary storage
storage device
data
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7321881A
Other languages
Japanese (ja)
Other versions
JPS57188153A (en
Inventor
Fukashi Uekawa
Ikuo Kodama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP7321881A priority Critical patent/JPS57188153A/en
Publication of JPS57188153A publication Critical patent/JPS57188153A/en
Publication of JPS6318908B2 publication Critical patent/JPS6318908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04JMULTIPLEX COMMUNICATION
    • H04J3/00Time-division multiplex systems
    • H04J3/02Details
    • H04J3/04Distributors combined with modulators or demodulators
    • H04J3/047Distributors with transistors or integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Time-Division Multiplex Systems (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明はデイジタル伝送、デイジタル信号処理
等で用いられる、複数本の直列入力信号を並列展
開し、各並列展開出力をビツト多重する直並列変
換多重化回路に関するものである。 従来、複数本の直列入力信号を並列展開して多
重化する場合には、第1図に示すように直並列変
換回路11〜1mで各直列信号1〜mを並列展開
してそれぞれの並列展開出力を多重化回路21〜
2lで多重化する構成が用いられるのが普通であ
る。 しかし、この構成では多重化する直列入力数に
等しい数(m)の直並列変換回路と、並列展開度
(並列展開されるビツト数)に等しい数(l)の多重
化回路が必要になるため、並列展開度が増え、多
重化する回線数が増えると回路規模が増大すると
いう欠点があつた。 本発明の目的は多重化レベルでの小規模直並列
変換の組合せにより、多重処理効果を挙げ回路規
模の削減を計る直並列変換多重化回路を提供する
ことにある。 本発明の直並列変換多重化回路は、m本(mは
2以上の整数)の直列入力信号の位相をmビツト
ずつずらすm−1個以上の遅延回路と、この遅延
回路により位相をずらされた直列入力信号を循環
的にmビツトずつ直列に多重化するm個の多重化
回路と、前記多重化回路の各出力にmビツトの直
並列変換を施すm個の直並列変換回路と、前記直
並列変換回路出力を入力し、すべての前記直列入
力信号のlビツト分(lはm2の倍数)が入力され
るまでm個のアドレスのそれぞれに区分して前記
直列入力信号のそれぞれを記憶し、lビツト分ず
つ前記直列入力信号のそれぞれを並列に読み出す
ようにした複数の一時記憶装置とを有することを
特徴とする。 次に本発明の実施例につき図面を参照して説明
する。第2図は本発明の一般的な回路構成のブロ
ツク図を示している。まずm本(mは任意の正整
数)の直列入力1〜mは遅延回路32〜3mによ
りmビツトずつ位相がずれた状態になり、m個の
多重化回路41〜4mによりmビツトずつ多重化
された出力m本になる。次にm個のmビツト直並
列変換回路51〜5mにより、多重化されたmビ
ツトが並列に展開され、l/m個ある(m×m)
ビツトの一時記憶装置6,1〜6,m,6(m+
1)〜6(l/m)に書込まれる。そして最後に
lビツトの並列展開データが全て一時記憶装置に
蓄えられた時点で順次読出すことにより、多重化
されたlビツト並列展開出力が得られる。ただ
し、この構成はlがm2の倍数である時に限り有効
である。 具体例としてlが27でmが3の場合について説
明する。第3図はそれを実現するブロツク図で第
4図はそのタイムチヤートである。直列入力1〜
3の並列展開されるべきデータを〜〓〓,(1)〜(2
7),〔1〕〜〔27〕で表わす。多重化回路42,
43の入力では直列入力2,3はそれぞれ3ビツ
ト、6ビツトの遅延を受けており、多重化回路4
1〜43の入力は3ビツトずつ位相がずれた形に
なつている。そして多重化回路41〜43の出力
では第4図に示すように直列入力1〜3が3ビツ
トずつ多重化された形になる。さらに3ビツトの
直並列変換回路51〜53により1ビツトずつ多
重化された信号として取り出すことができ、それ
が(3×3)ビツトの一時記憶装置6(1)〜6(9)に
書込まれる。一時記憶装置6(1)〜6(9)への書込み
は、一時記憶装置6(1)へはデータ〜,(1)〜
(3),〔1〕〜〔3〕を、一時記憶装置6(2)へはデ
ータ〜,(4)〜(6),〔4〕〜〔6〕をというよ
うに順次書込まれ、一時記憶装置6(9)へはデータ
〓〓〜〓〓,(25)〜(27),〔25〕〜〔27〕が書込まれ
る。最後に読出しは一時記憶装置6(1)〜6(9)へデ
ータ〜〓〓が書込まれた時点でデータ〜〓〓を並
列出力として読出し、データ〜〓〓,〔1〕〜
〔27〕についても順次同じ動作を繰返す。第4図
で矢印5はすべて書き込み位置を示し、矢印6は
すべて読出し位置を示す。 一時記憶装置6(1)(4)(7)の書き込み動作を説明す
ると、1番目の書き込みパルスで一時記憶装置6
(1)のアドレス0にデータを書き込む。2番
目の書き込みパルスで一時記憶装置6(1)のアドレ
ス1にデータ(1)(2)(3)を書き込む。3番目の書き込
みパルスで一時記憶装置6(1)のアドレス2にデー
タ〔1〕〔2〕〔3〕を書き込む。4番目の書き込
みパルスで一時記憶装置6(4)のアドレス0にデー
タを書き込む。5番目の書き込みパルスで
一時記憶装置6(4)のアドレス1にデータ(10)(11)(12)

書き込む。6番目の書き込みパルスで一時記憶装
置6(4)のアドレス2にデータ〔10〕〔11〕〔12〕を
書き込む。7番目の書き込みパルスで一時記憶装
置6(7)のアドレス0にデータを書き込む。
8番目の書き込みパルスで一時記憶装置6(7)のア
ドレス1にデータ(19)(20)(21)を書き込む。9番目
の書き込みパルスで一時記憶装置6(7)のアドレス
2にデータ〔19〕〔20〕〔21〕を書き込む。 一時記憶装置6(2)(5)(8)の書き込み動作を説明す
ると、1番目の書き込みパルスで一時記憶装置6
(2)のアドレス0にデータを書き込む。2番
目の書き込みパルスで一時記憶装置6(2)のアドレ
ス1にデータ(4)(5)(6)を書き込む。3番目の書き込
みパルスで一時記憶装置6(2)のアドレス2にデー
タ〔4〕〔5〕〔6〕を書き込む。4番目の書き込
みパルスで一時記憶装置6(5)のアドレス0にデー
タを書き込む。5番目の書き込みパルスで
一時記憶装置6(5)のアドレス1にデータ(13)(14)(15)

書き込む。6番目の書き込みパルスで一時記憶装
置6(5)のアドレス2にデータ〔1−4−3〕〔14〕
〔15〕を書き込む。7番目の書き込みパルスで一
時記憶装置6(8)のアドレス0にデータ〓〓を書
き込む。8番目の書き込みパルスで一時記憶装置
6(8)のアドレス1にデータ〓〓を書き込む。9
番目の書き込みパルスで一時記憶装置6(8)のアド
レス2にデータ〔22〕〔23〕〔24〕を書き込む。 一時記憶装置6(3)(6)(9)の書き込み動作を説明す
ると、1番目の書き込みパルスで一時記憶装置6
(3)のアドレス0にデータを書き込む。2番
目の書き込みパルスで一時記憶装置6(3)のアドレ
ス1にデータ(7)(8)(9)を書き込む。3番目の書き込
みパルスで一時記憶装置6(3)のアドレス2にデー
タ〔7〕〔8〕
The present invention relates to a serial-to-parallel conversion multiplexing circuit used in digital transmission, digital signal processing, etc., which expands a plurality of serial input signals in parallel and multiplexes each parallel expanded output into bits. Conventionally, when multiplexing multiple serial input signals by expanding them in parallel, each serial signal 1 to m is expanded in parallel by serial-parallel conversion circuits 11 to 1m as shown in FIG. Output multiplexing circuit 21~
A 2l multiplexing configuration is normally used. However, this configuration requires a number (m) of serial-to-parallel conversion circuits equal to the number of serial inputs to be multiplexed, and a number (l) of multiplexing circuits equal to the degree of parallel expansion (number of bits expanded in parallel). However, as the degree of parallelization increases and the number of multiplexed lines increases, the circuit size increases. An object of the present invention is to provide a serial-to-parallel conversion multiplexing circuit that achieves a multiprocessing effect and reduces the circuit scale by combining small-scale serial-to-parallel conversion at the multiplexing level. The serial-to-parallel conversion multiplexing circuit of the present invention includes m-1 or more delay circuits that shift the phase of m (m is an integer of 2 or more) serial input signals by m bits, and a phase shift circuit of the present invention. m multiplexing circuits for cyclically serially multiplexing serial input signals of m bits each; m serial-parallel conversion circuits for performing m-bit serial-parallel conversion on each output of the multiplexing circuit; Input the output of the serial/parallel conversion circuit, and store each of the serial input signals by dividing them into m addresses until l bits (l is a multiple of m2 ) of all the serial input signals are input. and a plurality of temporary storage devices configured to read each of the serial input signals in parallel in units of l bits. Next, embodiments of the present invention will be described with reference to the drawings. FIG. 2 shows a block diagram of the general circuit configuration of the present invention. First, m serial inputs 1 to m (m is any positive integer) are shifted in phase by m bits by delay circuits 32 to 3m, and are multiplexed by m bits by m multiplexing circuits 41 to 4m. The resulting output will be m. Next, the multiplexed m bits are expanded in parallel by m pieces of m bit serial/parallel conversion circuits 51 to 5m, and there are l/m pieces (m×m).
Bit temporary storage device 6, 1 to 6, m, 6 (m+
1) to 6 (l/m). Finally, when all the 1-bit parallel expansion data is stored in the temporary storage device, the multiplexed 1-bit parallel expansion output is obtained by sequentially reading out the data. However, this configuration is valid only when l is a multiple of m 2 . As a specific example, a case where l is 27 and m is 3 will be explained. Figure 3 is a block diagram to realize this, and Figure 4 is a time chart. Series input 1~
3 data to be expanded in parallel ~〓〓, (1) ~ (2
7), expressed as [1] to [27]. multiplexing circuit 42,
43, serial inputs 2 and 3 are delayed by 3 bits and 6 bits, respectively, and multiplexer circuit 4
The inputs 1 to 43 are shifted in phase by 3 bits. As shown in FIG. 4, the outputs of the multiplexing circuits 41-43 are in the form of multiplexed serial inputs 1-3 of 3 bits each. Furthermore, it can be extracted as a multiplexed signal bit by bit by the 3-bit serial/parallel converter circuits 51 to 53, and then written to the (3×3) bit temporary storage devices 6(1) to 6(9). It can be done. Writing to temporary storage devices 6(1) to 6(9) is as follows: data to temporary storage device 6(1), (1) to
(3), [1] to [3] are sequentially written to the temporary storage device 6 (2) as data ~, (4) to (6), [4] to [6], and temporarily Data 〓〓~〓〓, (25)~(27), [25]~[27] are written into the storage device 6(9). Finally, when the data~〓〓 is written to the temporary storage devices 6(1) to 6(9), the data~〓〓 is read out as parallel output, and the data~〓〓, [1]~
Repeat the same operation for [27] in sequence. In FIG. 4, all arrows 5 indicate write positions, and all arrows 6 indicate read positions. To explain the write operation of the temporary storage device 6(1)(4)(7), the first write pulse causes the temporary storage device 6 to write.
Write data to address 0 in (1). The second write pulse writes data (1), (2), and (3) to address 1 of the temporary storage device 6(1). Data [1][2][3] are written to address 2 of temporary storage device 6(1) with the third write pulse. The fourth write pulse writes data to address 0 of the temporary storage device 6(4). At the fifth write pulse, data (10)(11)(12) is written to address 1 of temporary storage device 6(4).
Write. Data [10], [11], and [12] are written to address 2 of temporary storage device 6(4) with the sixth write pulse. Data is written to address 0 of the temporary storage device 6(7) with the seventh write pulse.
Data (19), (20), and (21) are written to address 1 of the temporary storage device 6 (7) with the 8th write pulse. Data [19], [20], and [21] are written to address 2 of temporary storage device 6(7) with the ninth write pulse. To explain the write operation of the temporary storage device 6(2)(5)(8), the first write pulse causes the temporary storage device 6 to write.
Write data to address 0 in (2). The second write pulse writes data (4), (5), and (6) to address 1 of the temporary storage device 6(2). With the third write pulse, data [4], [5], and [6] are written to address 2 of the temporary storage device 6(2). Data is written to address 0 of the temporary storage device 6(5) with the fourth write pulse. At the fifth write pulse, data (13)(14)(15) is written to address 1 of temporary storage device 6(5).
Write. At the 6th write pulse, data [1-4-3] [14] is written to address 2 of temporary storage device 6(5).
Write [15]. The seventh write pulse writes data 〓〓 to address 0 of the temporary storage device 6(8). Data 〓〓 is written to address 1 of the temporary storage device 6(8) with the 8th write pulse. 9
Data [22], [23], and [24] are written to address 2 of the temporary storage device 6(8) with the th write pulse. To explain the write operation of the temporary storage device 6(3)(6)(9), the first write pulse causes the temporary storage device 6 to write.
Write data to address 0 in (3). With the second write pulse, data (7), (8), and (9) are written to address 1 of the temporary storage device 6 (3). At the third write pulse, data [7] [8] is written to address 2 of temporary storage device 6(3).

〔9〕を書き込む。4番目の書き込
みパルスで一時記憶装置6(6)のアドレス0にデー
タを書き込む。5番目の書き込みパルスで
一時記憶装置6(6)のアドレス1にデータ(16)(17)(18)

書き込む。6番目の書き込みパルスで一時記憶装
置6(6)のアドレス2にデータ〔16〕〔17〕〔18〕を
書き込む。7番目の書き込みパルスで一時記憶装
置6(9)のアドレス0にデータ〓〓〓〓〓〓を書き込む

8番目の書き込みパルスで一時記憶装置6(9)のア
ドレス1にデータ(25)(26)(27)を書き込む。9番目
の書き込みパルスで一時記憶装置6(9)のアドレス
2にデータ〔25〕〔26〕〔27〕を書き込む。 このようにして書き込んだ時点では、一時記憶
装置6(1)乃至6(9)の記憶内容は、第5図に示すよ
うになるから、つぎに、1番目の読み出しパルス
でアドレス0を読み出すと、データ乃至〓〓が並
列に読み出される。2番目の読み出しパルスでア
ドレス1を読み出すと、データ(1)乃至(27)が並列
に読み出される。3番目の読み出しパルスでアド
レス2を読み出すと、データ〔1〕乃至〔27〕が
並列に読み出される。これにより直列入力1〜3
の27ビツト並列展開された出力が多重化された形
で取り出せる。 以上述べた様に本発明はlビツトの直並列変換
とm多重のビツト多重を行うに当つて、従来の回
路構成ではlビツト直並列変換回路m個と多重化
回路l個を必要とする所を、lがm2の倍数の時に
は遅延回路(m−1)個(m個でも実施できる)
と多重化回路m個とmビツト直並列変換回路m個
と(m×m)ビツト一時記憶装置l/m個を組合せ ることにより実現でき、多重化する回線数、並列
展開度が大きくなると大幅に回路規模を削減でき
るという効果を有する。
Write [9]. Data is written to address 0 of the temporary storage device 6(6) with the fourth write pulse. At the fifth write pulse, data (16)(17)(18) is written to address 1 of temporary storage device 6(6).
Write. Data [16], [17], and [18] are written to address 2 of temporary storage device 6(6) with the sixth write pulse. With the seventh write pulse, data 〓〓〓〓〓〓 is written to address 0 of the temporary storage device 6(9).
Data (25), (26), and (27) are written to address 1 of temporary storage device 6 (9) with the 8th write pulse. Data [25], [26], and [27] are written to address 2 of the temporary storage device 6(9) with the ninth write pulse. At the time of writing in this way, the memory contents of the temporary storage devices 6(1) to 6(9) are as shown in FIG. 5, so when address 0 is read with the first read pulse, , data to 〓〓 are read out in parallel. When address 1 is read with the second read pulse, data (1) to (27) are read in parallel. When address 2 is read with the third read pulse, data [1] to [27] are read in parallel. This allows series inputs 1 to 3
The 27-bit parallel expanded output can be extracted in multiplexed form. As described above, the present invention can perform l-bit serial-to-parallel conversion and m-bit multiplexing, whereas the conventional circuit configuration requires m l-bit serial-to-parallel conversion circuits and l multiplexing circuits. , when l is a multiple of m 2 , delay circuits (m-1) (can be implemented with m)
This can be realized by combining m multiplexing circuits, m m-bit serial/parallel converter circuits, and l/m (m×m) bit temporary storage devices, and the number of multiplexed lines and the degree of parallelization increase significantly. This has the effect of reducing the circuit scale.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のlビツト並列展開とn多重を行
う直並列変換多重化回路のブロツク図、第2図は
本発明のlビツト並列展開とn多重を行う直並列
変換多重化回路の実施例のブロツク図、第3図は
27ビツト並列展開と3多重を行う直並列変換多重
化回路の実施例のブロツク図、第4図は第3図の
回路における信号の流れを示すタイムチヤート、
第5図は第3図中の一時記憶装置の記憶内容の説
明図である。 51〜5m……直並列変換回路、41〜4m…
…多重化回路、32〜3m……遅延回路、6(1)〜
6(l/m)……一時記憶装置、5……一時記憶
装置への書き込み位置、6……一時記憶装置から
の読出し位置。
Figure 1 is a block diagram of a conventional serial-to-parallel conversion multiplexing circuit that performs l-bit parallel expansion and n-multiplexing, and Figure 2 is an embodiment of the serial-parallel conversion multiplexing circuit that performs l-bit parallel expansion and n-multiplexing according to the present invention. The block diagram, Figure 3 is
A block diagram of an embodiment of a serial-to-parallel conversion multiplexing circuit that performs 27-bit parallel expansion and 3-multiplexing. Figure 4 is a time chart showing the signal flow in the circuit of Figure 3.
FIG. 5 is an explanatory diagram of the storage contents of the temporary storage device in FIG. 3. 51~5m...Serial parallel conversion circuit, 41~4m...
...Multiplex circuit, 32~3m...Delay circuit, 6(1)~
6 (l/m)...Temporary storage device, 5...Position for writing to the temporary storage device, 6...Position for reading from the temporary storage device.

Claims (1)

【特許請求の範囲】[Claims] 1 m本(mは2以上の整数)の直列入力信号の
位相をmビツトずつずらすm−1個以上の遅延回
路と、この遅延回路により位相をずらされた直列
入力信号を循環的にmビツトずつ直列に多重化す
るm個の多重化回路と、前記多重化回路の各出力
にmビツトの直並列変換を施すm個の直並列変換
回路と、前記直並列変換回路出力を入力し、すべ
ての前記直列入力信号のlビツト分(lはm2の倍
数)が入力されるまでm個のアドレスのそれぞれ
に区分して前記直列入力信号のそれぞれを記憶
し、lビツト分ずつ前記直列入力信号のそれぞれ
を並列に読み出すようにした複数の一時記憶装置
とを有することを特徴とする直並列変換多重化回
路。
1 m-1 or more delay circuits that shift the phase of m (m is an integer of 2 or more) serial input signals by m bits, and cyclically shift the serial input signal whose phase has been shifted by the delay circuits by m bits. m multiplexing circuits that serially multiplex each output, m serial-to-parallel converting circuits that perform m-bit serial-to-parallel conversion on each output of the multiplexing circuit, and the outputs of the serial-to-parallel converting circuits. Each of the serial input signals is divided into m addresses and stored until l bits (l is a multiple of m 2 ) of the serial input signal are input, and the serial input signal is stored in units of l bits. 1. A serial-to-parallel conversion multiplexing circuit comprising: a plurality of temporary storage devices configured to read out each of the above in parallel.
JP7321881A 1981-05-15 1981-05-15 Serial parallel conversion multiplex circuit Granted JPS57188153A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7321881A JPS57188153A (en) 1981-05-15 1981-05-15 Serial parallel conversion multiplex circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7321881A JPS57188153A (en) 1981-05-15 1981-05-15 Serial parallel conversion multiplex circuit

Publications (2)

Publication Number Publication Date
JPS57188153A JPS57188153A (en) 1982-11-19
JPS6318908B2 true JPS6318908B2 (en) 1988-04-20

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ID=13511796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7321881A Granted JPS57188153A (en) 1981-05-15 1981-05-15 Serial parallel conversion multiplex circuit

Country Status (1)

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JP (1) JPS57188153A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61256828A (en) * 1985-01-17 1986-11-14 Oki Electric Ind Co Ltd Serial parallel conversion circuit
JPS61164341A (en) * 1985-01-17 1986-07-25 Oki Electric Ind Co Ltd Serial-parallel and parallel-serial converting system
JPS62128215A (en) * 1985-11-29 1987-06-10 Hitachi Ltd Series-parallel and parallel-serial conversion circuit
JP3099955B2 (en) * 1989-10-13 2000-10-16 株式会社東芝 Multiplexer
JPH04100429A (en) * 1990-08-20 1992-04-02 Toshiba Corp Time division multiplexer

Also Published As

Publication number Publication date
JPS57188153A (en) 1982-11-19

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