JPH0212383B2 - - Google Patents
Info
- Publication number
- JPH0212383B2 JPH0212383B2 JP59091879A JP9187984A JPH0212383B2 JP H0212383 B2 JPH0212383 B2 JP H0212383B2 JP 59091879 A JP59091879 A JP 59091879A JP 9187984 A JP9187984 A JP 9187984A JP H0212383 B2 JPH0212383 B2 JP H0212383B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- substrate holder
- contact
- cooling
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
- H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
Description
【発明の詳細な説明】
本発明は半導体の製造に使用されるシリコンウ
エハ等の基板を冷却する基板の冷却装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a substrate cooling device for cooling a substrate such as a silicon wafer used in semiconductor manufacturing.
一般に真空室内でこの種基板にイオン注入等の
処理を施すと発熱して基板が損傷する危険がある
ので、基板を冷却水を循環させた基板ホルダで保
持することが行なわれている。 Generally, when a process such as ion implantation is performed on this type of substrate in a vacuum chamber, there is a risk of heat generation and damage to the substrate, so the substrate is held in a substrate holder in which cooling water is circulated.
この場合、第3図示の如く、真空室A内の基板
aを基板ホルダbの平旦な冷却面cに直接当接さ
せると、基板aが熱変形により点線示のように冷
却面cから遊離し冷却効率が悪くなるので、第4
図示の如く、基板ホルダbの冷却面cに熱伝導性
の比較的良いクツシヨン材dを設け、これを介し
て基板aを当接させている。而してクツシヨン材
dの弾力性は経時的に損なわれるので、基板aと
の接触面積が次第に小さくなり、それに伴い冷却
効率が悪くなる不都合がある。 In this case, as shown in Figure 3, when the substrate a in the vacuum chamber A is brought into direct contact with the normal cooling surface c of the substrate holder b, the substrate a is separated from the cooling surface c as shown by the dotted line due to thermal deformation. Since the cooling efficiency will deteriorate, the fourth
As shown in the figure, a cushion material d having relatively good thermal conductivity is provided on the cooling surface c of the substrate holder b, and the substrate a is brought into contact with the cushion material d through this. Since the elasticity of the cushion material d deteriorates over time, the contact area with the substrate a gradually decreases, resulting in a disadvantage that the cooling efficiency deteriorates.
本発明は基板と基板ホルダとの接触面積を常に
大きくすることにより、冷却効率のい装置を得る
ことをその目的としたもので、真空室内で処理さ
れる基板を冷却水の循環等により冷却された基板
ホルダにより保持する式のものに於て、該基板に
当接する基板ホルダの表面に弾力性と熱良導性を
備えた細線を植設して成る。 The purpose of the present invention is to obtain an apparatus with high cooling efficiency by constantly increasing the contact area between the substrate and the substrate holder.The present invention aims to provide a device with high cooling efficiency by constantly increasing the contact area between the substrate and the substrate holder. In the case of a type in which the substrate is held by a substrate holder, thin wires having elasticity and good thermal conductivity are implanted on the surface of the substrate holder that comes into contact with the substrate.
以下本発明の実施例を図示のものに付説明す
る。 Embodiments of the present invention will be described below with reference to the drawings.
第1図に於て、1は真空室2内に配置される基
板ホルダを示し、該基板ホルダ1は例えばCu、
Al等の金属で形成され、その内部には冷却水の
循環路3が設けられる。更にその表面すなわち冷
却面には弾力性と熱良導性を備えた細線4が植設
される。該細線4はCu、C等の0.1mm乃至0.05mm
程度の直径を有する丸線で構成され、その複数本
が束ねられて1mm程度の直径を有する細線の束5
に形成される。 In FIG. 1, reference numeral 1 indicates a substrate holder placed in a vacuum chamber 2, and the substrate holder 1 is made of, for example, Cu,
It is made of metal such as Al, and a cooling water circulation path 3 is provided inside it. Furthermore, thin wires 4 having elasticity and good thermal conductivity are implanted on the surface, that is, the cooling surface. The thin wire 4 is 0.1mm to 0.05mm of Cu, C, etc.
A bundle of thin wires 5 having a diameter of about 1 mm is made up of round wires with a diameter of about 1 mm.
is formed.
図中、6は該基板ホルダ1に保持されるシリコ
ンウエハ等の基板、7は該基板6の周囲を押圧し
て該基板6を該基板ホルダ1に当接させる押え板
を夫々示す。 In the figure, 6 indicates a substrate such as a silicon wafer held by the substrate holder 1, and 7 indicates a presser plate that presses the periphery of the substrate 6 to bring the substrate 6 into contact with the substrate holder 1.
第1図示の実施例のものでは、押え板7により
基板6を押圧したときに細線の束5が座屈する虞
れがあるので、これを防止するため、第2図示の
ものは、第1図示の基板ホルダ1上に、更に、細
線の束5が植設されている位置に対応させて該細
線の束5を入れる直径1mm程度の孔8を穿設した
Cu、SUS等の金属から成る多孔板9をろう付等
により固着し、各細線の束5の先端を該多孔板9
の表面から僅かに覗かせるようにした。 In the embodiment shown in the first drawing, there is a risk that the bundle of thin wires 5 may buckle when the substrate 6 is pressed by the holding plate 7. To prevent this, the embodiment shown in the second drawing is different from the one shown in the first drawing. Further, on the substrate holder 1, a hole 8 with a diameter of about 1 mm was bored into which the bundle of fine wires 5 was placed, corresponding to the position where the bundle of fine wires 5 was implanted.
A perforated plate 9 made of metal such as Cu or SUS is fixed by brazing or the like, and the tip of each thin wire bundle 5 is attached to the perforated plate 9.
It was made to peek out slightly from the surface.
尚、該細線4を扁平板状のもので構成しても良
い。次いでその作動を説明するに、基板6を押え
板7により上方から押圧して基板6に基板ホルダ
1を当接させ、基板6の処理を開始すれば、基板
6は発熱して変形するが、常に基板6は弾力性と
熱良導性を備えた細線4を介して基板ホルダ1に
多点で接触されるので、基板6の熱は細線4を介
して基板ホルダ1に確実に伝わる。 Incidentally, the thin wire 4 may be configured in the shape of a flat plate. Next, to explain its operation, when the substrate 6 is pressed from above by the holding plate 7 to bring the substrate holder 1 into contact with the substrate 6 and processing of the substrate 6 is started, the substrate 6 will generate heat and deform. Since the substrate 6 is always in contact with the substrate holder 1 at multiple points via the thin wires 4 having elasticity and good thermal conductivity, the heat of the substrate 6 is reliably transmitted to the substrate holder 1 via the thin wires 4.
このように本発明によるときは、基板に当接す
る基板ホルダの表面に弾力性と熱良導性を備えた
細線を植設したので、基板が熱変形を生じても、
細線はその変形に追従して接触し続け、基板と基
板ホルダとの接触面積は常に大きく保持されて、
前記した従来装置の不都合がなく、冷却効率を良
好にして基板の熱による損傷が防止でき、しかも
耐久性に優れた装置を提供できる等の効果を有す
る。 In this way, according to the present invention, thin wires with elasticity and good thermal conductivity are implanted on the surface of the substrate holder that comes into contact with the substrate, so even if the substrate is thermally deformed,
The thin wire follows its deformation and continues to make contact, and the contact area between the substrate and substrate holder is always maintained large.
The present invention has the advantage that it does not have the above-mentioned disadvantages of the conventional device, has good cooling efficiency, can prevent damage to the substrate due to heat, and can provide a device with excellent durability.
第1図は本案装置の1例を示す説明線図、第2
図はその変形例を示す説明線図、第3図及び第4
図は従来例の説明線図である。
1……基板ホルダ、4……細線、6……基板。
Figure 1 is an explanatory diagram showing one example of the proposed device;
The figures are explanatory diagrams showing modified examples, Figures 3 and 4.
The figure is an explanatory diagram of a conventional example. 1...Substrate holder, 4...Thin wire, 6...Substrate.
Claims (1)
により冷却された基板ホルダにより保持する式の
ものに於て、該基板に当接する基板ホルダの表面
に弾力性と熱良導性を備えた細線を植設して成る
基板の冷却装置。1 In a type in which a substrate to be processed in a vacuum chamber is held by a substrate holder cooled by circulation of cooling water, etc., the surface of the substrate holder that comes into contact with the substrate has elasticity and good thermal conductivity. A cooling device for a board made of thin wires.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59091879A JPS60236223A (en) | 1984-05-10 | 1984-05-10 | Cooling device of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59091879A JPS60236223A (en) | 1984-05-10 | 1984-05-10 | Cooling device of substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60236223A JPS60236223A (en) | 1985-11-25 |
| JPH0212383B2 true JPH0212383B2 (en) | 1990-03-20 |
Family
ID=14038841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59091879A Granted JPS60236223A (en) | 1984-05-10 | 1984-05-10 | Cooling device of substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60236223A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6142843A (en) * | 1984-08-02 | 1986-03-01 | Ulvac Corp | Device for cooling substrate |
| JPH04214620A (en) * | 1990-12-12 | 1992-08-05 | Nec Kyushu Ltd | Disc for ion implantation device |
| DE10344492B4 (en) * | 2003-09-24 | 2006-09-07 | Carl Zeiss Nts Gmbh | Particle beam |
-
1984
- 1984-05-10 JP JP59091879A patent/JPS60236223A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60236223A (en) | 1985-11-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |