JPH0555808B2 - - Google Patents
Info
- Publication number
- JPH0555808B2 JPH0555808B2 JP59074390A JP7439084A JPH0555808B2 JP H0555808 B2 JPH0555808 B2 JP H0555808B2 JP 59074390 A JP59074390 A JP 59074390A JP 7439084 A JP7439084 A JP 7439084A JP H0555808 B2 JPH0555808 B2 JP H0555808B2
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- electrical resistance
- liquid helium
- thin film
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
- G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
- G01F23/24—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of resistance of resistors due to contact with conductor fluid
Landscapes
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
Description
【発明の詳細な説明】
〔発明の対象〕
本発明は、金属又はガラスよりなる容器内の液
体ヘリウムの液面を測定する液体ヘリウム用液面
計に関するもので、更に詳述すれば液面計の検出
部の改良に関するものである。Detailed Description of the Invention [Object of the Invention] The present invention relates to a liquid helium level meter that measures the level of liquid helium in a container made of metal or glass. The present invention relates to an improvement of the detection section of the present invention.
従来の容器内の液体ヘリウムの液面を測定する
液面計については、特開昭55−85224号「液体ヘ
リウム液面計」の公報があり、一点検知型として
の構成が示されている。これを基本として作成し
た従来の液面計を第1図により説明すれば、1は
一点検知型の液面計で、2は検出部、3は電子回
路を内蔵した計測部、3aは信号発信部である。
4はニオブ(Nb)及びチタン(Ti)よりなる超
電導合金の電気抵抗線で、ボビン5に巻回されて
おり、超電導遷移温度が10Kである。6はリード
線である。
Regarding a conventional level gauge for measuring the level of liquid helium in a container, there is a publication entitled "Liquid Helium Level Meter" in Japanese Patent Application Laid-Open No. 55-85224, which shows a single-point detection type configuration. A conventional level gauge created based on this is explained with reference to Figure 1. 1 is a single point detection type level gauge, 2 is a detection section, 3 is a measurement section with a built-in electronic circuit, and 3a is a signal transmitter. Department.
4 is an electrical resistance wire made of a superconducting alloy made of niobium (Nb) and titanium (Ti), which is wound around a bobbin 5, and has a superconducting transition temperature of 10K. 6 is a lead wire.
第1図の従来の一点検知型の液面計は、超電導
合金よりなる電気抵抗線がボビンに巻回されてい
るために、構造が非常に大きく、従つて熱容量が
大きくなり液面計を容器内に挿入する際の液体ヘ
リウムの消費量が大きい。またボビンの径が数mm
と大きいために、液面を切る際に超電導遷移が鋭
敏に起こらず、また、ボビン上昇時と下降時にヒ
ステリシスが生じ易く、測定精度が悪いという欠
点があつた。次に、超電導遷移温度がほぼ10K
と、液体ヘリウム温度(4.2K)に比べてかなり
高温である為、液面よりかなり上部で超電導への
遷移がおこるので、測定誤差が大きく、この為に
電気抵抗線と同時にニクロム線等の加熱用の電気
抵抗線を巻回し、液面から離れたボビンを加熱し
て、超電導状態を破らなければならず、この機構
により、ボビンの熱容量が大きくなり、また、加
熱電力によるヘリウムの蒸発量が著しい。更に液
面計の持運びによる移動、振動等により電気抵抗
のズレが発生し易く、信頼性に欠けるという欠点
があつた。
The conventional single-point detection type liquid level gauge shown in Figure 1 has a very large structure because an electrical resistance wire made of a superconducting alloy is wound around a bobbin, and therefore has a large heat capacity. A large amount of liquid helium is consumed when inserting it into the tank. Also, the diameter of the bobbin is several mm.
Because of its large size, the superconducting transition does not occur sharply when the liquid level is cut, and hysteresis tends to occur when the bobbin is raised and lowered, resulting in poor measurement accuracy. Next, the superconducting transition temperature is approximately 10K
Since the temperature is considerably higher than that of liquid helium (4.2K), the transition to superconductivity occurs well above the liquid level, resulting in large measurement errors. The superconducting state must be broken by winding electrical resistance wire and heating the bobbin away from the liquid surface. This mechanism increases the heat capacity of the bobbin and reduces the amount of helium evaporated by heating power. Significant. Furthermore, the electrical resistance tends to shift due to movement and vibration caused by carrying the liquid level gauge, resulting in a lack of reliability.
そこで本発明は、一点検知型の液体ヘリウム液
面計の検出部の構造において、熱容量が小さくて
液体ヘリウムの蒸発量が少なく、構造簡単で、高
精度で、信頼性のある液面計の測定検出部に改良
することをその技術的課題とするものである。
Therefore, the present invention aims to provide a single-point detection type liquid helium level gauge with a small heat capacity, a small amount of evaporation of liquid helium, a simple structure, high precision, and reliable liquid level gauge measurement. The technical challenge is to improve the detection section.
前記技術的課題を解決するために本発明が講じ
た技術的手段は、本発明者らの先願(特願昭58−
220076号「特公平1−14522号」「液体ヘリウム液
面計」)の非晶質超電導合金を利用したことであ
り、ガラス、セラミツク又はアルマイトの基板上
に、真空蒸着、スパツタリング、イオンプレーテ
イング等の真空薄膜技術によつて、ジルコニウム
とロジウムとからなり(ジルコニウムの割合が
72.5〜77.5原子%の組成)超電導遷移温度が液体
ヘリウム温度に近い4.2K〜4.5Kである非晶質超
電導合金薄膜を作製し、この非晶質超電導合金薄
膜より形成した電気抵抗素子を支持部材の端部に
固定したものである。
The technical means taken by the present invention to solve the above-mentioned technical problems are disclosed in the inventors' earlier application (Japanese Patent Application No.
220076 "Special Publication No. 1-14522""Liquid Helium Level Gauge"), it is possible to apply vacuum evaporation, sputtering, ion plating, etc. on a glass, ceramic or alumite substrate. It is made of zirconium and rhodium (the proportion of zirconium is
An amorphous superconducting alloy thin film with a superconducting transition temperature of 4.2 K to 4.5 K, which is close to the liquid helium temperature (composition of 72.5 to 77.5 at. It is fixed to the end of the
ここで、真空蒸着、スパツタリング、イオンプ
レーテイング等の真空薄膜技術は、上記非晶質超
電導合金薄膜の薄膜構造を形成すると同時に非晶
構造を形成する。 Here, vacuum thin film techniques such as vacuum evaporation, sputtering, and ion plating form an amorphous structure at the same time as forming the thin film structure of the amorphous superconducting alloy thin film.
上記技術的手段は次のように作用する。すなわ
ち超電導遷移温度が、液体ヘリウム温度(4.2K)
に近く、鋭敏な遷移巾をもち、電気抵抗の温度係
数の絶対値が小さく、電気抵抗が高いジルコニウ
ムとロジウムとからなる非晶質超電導合金を用い
るので、液面直上の4.2K直上の温度で遷移し、
超電導状態を破り、測定誤差を少なくする為の加
熱電力が極めてわずかでよく、使用状態によつて
は加熱機構そのものが不要となる。次に、ガラ
ス、セラミツク、又はアルマイトよりなる基板上
に非晶質超電導合金薄膜を成膜し、この非晶質超
電導合金薄膜より電気抵抗素子を形成して支持部
材の端部に固定したものであるために、この電気
抵抗素子は直径が約3φmm、厚さは約10μm以下
で、基板の厚さを考慮しても極めて小型に形成す
ることができ、従つて熱容量が非常に小さくな
り、鋭敏に液体ヘリウム温度に冷却されると同時
に、浸漬によるヘイルムの消費量も極めて少な
い。したがつて素子の超電導遷移が約1mm以下の
極めて微少な変位で起こり、素子の上昇、下降に
よるヒステリシスも極めて小さく実用上、全く無
視しうるものである。
The above technical means works as follows. In other words, the superconducting transition temperature is the liquid helium temperature (4.2K)
Since we use an amorphous superconducting alloy consisting of zirconium and rhodium, which has a sharp transition width, a small absolute value of the temperature coefficient of electrical resistance, and high electrical resistance, it can be used at temperatures just above 4.2 K, just above the liquid surface. transition,
Very little heating power is required to break the superconducting state and reduce measurement errors, and depending on the usage conditions, the heating mechanism itself may not be necessary. Next, an amorphous superconducting alloy thin film is formed on a substrate made of glass, ceramic, or alumite, and an electrical resistance element is formed from this amorphous superconducting alloy thin film and fixed to the end of the support member. Therefore, this electrical resistance element has a diameter of approximately 3φmm and a thickness of approximately 10μm or less, and can be formed extremely compact even considering the thickness of the substrate. It is cooled down to liquid helium temperatures, and at the same time consumption of heil by immersion is extremely low. Therefore, the superconducting transition of the element occurs with an extremely small displacement of about 1 mm or less, and the hysteresis due to the rise and fall of the element is extremely small and can be completely ignored in practical terms.
このように高精度な測定ができる他に、支持部
材がパイプ状の場合にはカシメバネにより固定
し、棒状の場合にはソケツト式の嵌め込構造とす
ることにより、簡単で堅牢な信頼性の高い検出部
の構造となるものである。 In addition to being able to perform highly accurate measurements in this way, if the support member is pipe-shaped, it is fixed with a caulking spring, or if it is rod-shaped, it is fitted with a socket type structure, making it simple, robust, and highly reliable. This is the structure of the detection section.
本発明は、次の特有の効果を生じる、すなわち
液面計としての検出部の電気抵抗素子が薄膜であ
るために、リボン材、ワイヤー材に比べて、その
厚さが薄いために高い電気抵抗が得易く、その超
電導遷移により生じる抵抗変化が大きいために、
検出回路部の精度が低級で充分であるという利点
がある。
The present invention has the following unique effects: Since the electrical resistance element of the detection part as a liquid level gauge is a thin film, it has a high electrical resistance due to its thinness compared to ribbon material or wire material. Because it is easy to obtain and the resistance change caused by the superconducting transition is large,
It has the advantage that the accuracy of the detection circuit section is low and sufficient.
以下、上記技術的手段の一具体例を示す実施例
について説明する。
An example illustrating a specific example of the above technical means will be described below.
第2図において、1は計測部及び測定検出部よ
りなる一点検知型の液体ヘリウム液面計であり、
10はガラス、セラミツク、又はアルマイトより
なる板厚約0.3mmの基板、11は電気抵抗素子、
14はリード線である。電気抵抗素子11は、基
板10上にスパツタリングにより作製されたジル
コニウムとロジウムとからなる非晶質超電導合金
薄膜より形成されたものであり、厚さは約10μm、
直径は3φmmであり、超電導遷移温度は、ジルコ
ニウムの割合が75原子%の組成では4.42K、ジル
コニウムの割合が74原子%の組成では4.40K、ジ
ルコニウムの割合が73原子%の組成では4.22Kで
ある。第3図は電気抵抗素子11及び基板10を
示すもので、11a,11bはハンダ付けによる
電極、11eはジグザグ状の抵抗パターンを示
す。電気抵抗素子11を備えた基板10は、第4
図イのようにステンレスパイプよりなる支持部材
12の場合は基板10をカシメバネ15により固
着し、第4図ロのようにガラス繊維を複合した樹
脂よりなる丸棒の支持部材13の場合は支持部材
13内にリード線14とソケツト16a,16b
を埋設し、電気抵抗素子の突出した電極をソケツ
ト16a,16bに嵌合する。 In FIG. 2, 1 is a single-point detection type liquid helium level gauge consisting of a measurement section and a measurement detection section;
10 is a substrate made of glass, ceramic, or alumite and has a thickness of about 0.3 mm; 11 is an electrical resistance element;
14 is a lead wire. The electrical resistance element 11 is formed of an amorphous superconducting alloy thin film made of zirconium and rhodium by sputtering on the substrate 10, and has a thickness of about 10 μm.
The diameter is 3φmm, and the superconducting transition temperature is 4.42K for a composition with a zirconium ratio of 75 at%, 4.40K for a composition with a zirconium ratio of 74 at%, and 4.22K for a composition with a zirconium ratio of 73 at%. be. FIG. 3 shows the electric resistance element 11 and the substrate 10, 11a and 11b are soldered electrodes, and 11e is a zigzag resistance pattern. The substrate 10 provided with the electrical resistance element 11 has a fourth
In the case of the support member 12 made of stainless steel pipe as shown in Figure A, the substrate 10 is fixed with a caulking spring 15, and in the case of the support member 13 of a round bar made of resin composited with glass fibers as shown in Figure 4B, the support member Lead wire 14 and sockets 16a, 16b in 13
The protruding electrodes of the electrical resistance elements are fitted into the sockets 16a and 16b.
上記構成において、ハンダ付けによる電極は通
常用いられる銀ペーストによる電極に比べて信頼
性のすぐれた構成であり長期間の使用に耐えるも
のである。また非晶質超電導合金薄膜よりなる電
気抵抗素子11及び基板10が、液体ヘリウム中
に浸漬すれば、直ちに電気抵抗は0となりメータ
部の信号が作動し、液体ヘリウムより離れれば、
信号が中止され、極めて鋭敏に作動するものであ
る。 In the above structure, the soldered electrodes have a more reliable structure than the commonly used electrodes made of silver paste, and can withstand long-term use. Furthermore, when the electrical resistance element 11 and the substrate 10 made of the amorphous superconducting alloy thin film are immersed in liquid helium, the electrical resistance immediately becomes 0 and the signal on the meter section is activated, and when the electrical resistance element 11 and the substrate 10 are separated from the liquid helium,
The signal is interrupted and is very sensitive.
第1図は従来例の説明でイは外観図、ロは要部
の断面図でかる。第2図は本実施例の概略説明図
であり、第3図は電気抵抗素子の説明図でイは平
面図、ロはイのA〜A断面図であり、第4図のイ
は支持部先端の拡大断面図であり、ロは別の実施
例の支持部先端の拡大断面図である。
10……基板、11……電気抵抗素子、12,
13……支持部材。
FIG. 1 is an explanation of a conventional example, with A being an external view and B being a sectional view of the main parts. FIG. 2 is a schematic explanatory diagram of this embodiment, FIG. 3 is an explanatory diagram of an electrical resistance element, A is a plan view, B is a sectional view from A to A of A, and A in FIG. 4 is a support part. It is an enlarged sectional view of a tip, and (b) is an enlarged sectional view of a support part tip of another example. 10...Substrate, 11...Electric resistance element, 12,
13...Supporting member.
Claims (1)
電導合金の電気抵抗素子を支持部材の端部に固定
して、液体ヘリウムの液面を検出する一点検知型
の液面計において、 ガラス、セラミツク又はアルマイトの基板上
に、真空蒸着、スパツタリング、イオンプレーテ
イング等の真空薄膜技術によつて、ジルコニウム
とロジウムとからなり超電導遷移温度が液体ヘリ
ウム温度に近い4.2K〜4.5Kである非晶質超電導
合金薄膜を作製し、この非晶質超電導合金薄膜よ
り形成した電気抵抗素子を支持部材の端部に固定
した、液体ヘリウム用液面計の検出部。[Claims] 1. A single-point detection type liquid level gauge that detects the level of liquid helium by fixing an electrical resistance element made of a superconducting alloy whose main structure is an amorphous alloy phase to the end of a support member. A superconducting material made of zirconium and rhodium with a superconducting transition temperature of 4.2K to 4.5K, which is close to the liquid helium temperature, is formed on a glass, ceramic, or alumite substrate by vacuum thin film technology such as vacuum evaporation, sputtering, or ion plating. A detection section of a level gauge for liquid helium in which an amorphous superconducting alloy thin film is prepared and an electrical resistance element formed from the amorphous superconducting alloy thin film is fixed to an end of a support member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7439084A JPS60216225A (en) | 1984-04-12 | 1984-04-12 | Detector section for level gauge comprising thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7439084A JPS60216225A (en) | 1984-04-12 | 1984-04-12 | Detector section for level gauge comprising thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60216225A JPS60216225A (en) | 1985-10-29 |
| JPH0555808B2 true JPH0555808B2 (en) | 1993-08-18 |
Family
ID=13545799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7439084A Granted JPS60216225A (en) | 1984-04-12 | 1984-04-12 | Detector section for level gauge comprising thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60216225A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5630620A (en) * | 1979-08-21 | 1981-03-27 | Toshiba Corp | Element of continuous liquid level meter |
| JPS58166220A (en) * | 1982-03-26 | 1983-10-01 | Aisin Seiki Co Ltd | Liquid level indicator of liquid helium |
-
1984
- 1984-04-12 JP JP7439084A patent/JPS60216225A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60216225A (en) | 1985-10-29 |
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