JPH0564711B2 - - Google Patents
Info
- Publication number
- JPH0564711B2 JPH0564711B2 JP8289088A JP8289088A JPH0564711B2 JP H0564711 B2 JPH0564711 B2 JP H0564711B2 JP 8289088 A JP8289088 A JP 8289088A JP 8289088 A JP8289088 A JP 8289088A JP H0564711 B2 JPH0564711 B2 JP H0564711B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- vacuum
- silicon phthalocyanine
- polymer thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- JACPFCQFVIAGDN-UHFFFAOYSA-M sipc iv Chemical compound [OH-].[Si+4].CN(C)CCC[Si](C)(C)[O-].C=1C=CC=C(C(N=C2[N-]C(C3=CC=CC=C32)=N2)=N3)C=1C3=CC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 JACPFCQFVIAGDN-UHFFFAOYSA-M 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002329 infrared spectrum Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JHKWXZZEBNEOAE-UHFFFAOYSA-N dihydroxysilicon Chemical compound O[Si]O JHKWXZZEBNEOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Polymers (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、シリコンフタロシアニンポリマー薄
膜の製法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing silicon phthalocyanine polymer thin films.
従来の技術
従来よりシリコンフタロシアニンは一次元導電
体として注目され、フタロシアニナトシリコンジ
ハイドロオキサイドを真空条件下で加熱し脱水重
合することにより、一次元結晶構造を有するシリ
コンフタロシアニンポリマー粉末を形成する方法
が知られている（ジヤーナル オブ ザ アメリ
カン ケミカル ソサイエテイ；J.Am.Chem.
Soc.1983、105、1539〜1567）。Conventional technology Silicon phthalocyanine has traditionally attracted attention as a one-dimensional conductor, and a method of forming silicon phthalocyanine polymer powder having a one-dimensional crystal structure by heating and dehydrating phthalocyaninato silicon dihydroxide under vacuum conditions has been proposed. is known (Journal of the American Chemical Society; J.Am.Chem.
Soc.1983, 105 , 1539-1567).
発明が解決しようとする課題
しかしながら、一次元導電体としてのシリコン
フタロシアニンの機能を引き出すためには、配向
性をもつた薄膜の形成が必要であり、ポリマー粉
末をバインダー等に分散させて薄膜化する等の従
来の方法では配向性を制御することができない。Problems to be Solved by the Invention However, in order to bring out the function of silicon phthalocyanine as a one-dimensional conductor, it is necessary to form a thin film with orientation, and it is necessary to form a thin film by dispersing polymer powder in a binder etc. Orientation cannot be controlled using conventional methods such as .
本発明は、以上のような従来の課題に鑑み、良
好な配向性を有するシリコンフタロシアニンポリ
マー薄膜を形成することを目的とする。 In view of the above-mentioned conventional problems, the present invention aims to form a silicon phthalocyanine polymer thin film having good orientation.
課題を解決するための手段
本発明は上記目的を達成するもので、その技術
的な手段は、吸湿性を有する基板又は予め−OH
基を有する物質で表面処理された基板上にフタロ
シアニナトシリコンジクロライドを真空蒸着して
薄膜化し、更に真空中で熱処理するシリコンフタ
ロシアニンポリマー薄膜の製法にある。Means for Solving the Problems The present invention achieves the above object, and the technical means thereof is to use a hygroscopic substrate or a -OH
The present invention provides a method for producing a silicon phthalocyanine polymer thin film, in which phthalocyaninatosilicon dichloride is vacuum-deposited on a substrate whose surface has been treated with a substance having a group, to form a thin film, and then heat-treated in vacuum.
また本発明の他の技術的な手段としては、−
OH基を有する物質を真空蒸着により予め形成さ
れた基板上にフタロシアニナトシリコンジクロラ
イドを真空蒸着した後、真空中で熱処理するシリ
コンフタロシアニンポリマー薄膜の製法にある。 Further, as other technical means of the present invention, -
The present invention is a method for producing a silicon phthalocyanine polymer thin film, in which phthalocyaninatosilicon dichloride is vacuum-deposited on a substrate on which a substance having an OH group has been previously formed by vacuum-deposition, and then heat-treated in a vacuum.
作 用
本発明は、吸湿性を有する基板、−OH基を有
する物質で予め表面処理された基板、又は−OH
基を有する物質を真空蒸着により予め形成された
基板上にフタロシアニナトシリコンジクロライド
を真空蒸着し、更に真空中で熱処理することによ
り、配向性を有するシリコンフタロシアニンポリ
マー薄膜を形成することができる。Function The present invention can be applied to a hygroscopic substrate, a substrate whose surface has been previously treated with a substance having an -OH group, or an -OH
By vacuum-depositing phthalocyaninatosilicon dichloride on a substrate on which a substance having groups has been previously formed by vacuum-deposition and further heat-treating in vacuum, an oriented silicon phthalocyanine polymer thin film can be formed.
実施例
以下、本発明の実施例について図面を参照しな
がら説明する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
フタロシアニナトシリコンジクロライドを石英
るつぼに入れ、10-5torr台の真空中で400℃に加
熱して真空蒸着することにより、KBr基板上に
膜厚約1μｍの薄膜を形成した。さらに真空条件
下で360℃、１時間加熱処理を行なつた。このよ
うにして得られた薄膜のIRスペクトルを図に示
す。IRスペクトルはシリコンフタロシアニンポ
リマー粉末のものと一致しており、この薄膜がシ
リコンフタロシアニンポリマー薄膜であることが
確認できた。またＸ線回折パターンからこの薄膜
は結晶配向性を有していることがわかつた。 Phthalocyaninatosilicon dichloride was placed in a quartz crucible, heated to 400°C in a vacuum of 10 -5 torr, and vacuum-deposited to form a thin film with a thickness of approximately 1 μm on a KBr substrate. Further, heat treatment was performed at 360° C. for 1 hour under vacuum conditions. The figure shows the IR spectrum of the thin film thus obtained. The IR spectrum matched that of silicon phthalocyanine polymer powder, confirming that this thin film was a silicon phthalocyanine polymer thin film. Furthermore, it was found from the X-ray diffraction pattern that this thin film had crystal orientation.
基板としては、上記KBrの他、吸湿性を有す
るものであれば良い。 In addition to the above-mentioned KBr, the substrate may be any material that has hygroscopicity.
また予め−OH基を有する物質で表面処理され
た基板上に上記と同様の方法で薄膜を形成し、更
に加熱処理を行つた場合も前実施例と同様の効果
が得られた。 Furthermore, when a thin film was formed in the same manner as above on a substrate whose surface had been previously treated with a substance having an -OH group, and further heat treatment was performed, the same effect as in the previous example was obtained.
更に−OH基を有する物質を予め真空蒸着によ
り形成した基板を用い、この基板上に前記実施例
と同様の条件でフタロシアニナトシリコンジクロ
ライドを真空蒸着し、さらに真空中で熱処理する
ことによつても同様の効果が得られた。 Furthermore, using a substrate on which a substance having an -OH group was previously formed by vacuum evaporation, phthalocyaninatosilicon dichloride was vacuum evaporated onto this substrate under the same conditions as in the previous example, and further heat-treated in vacuum. A similar effect was obtained.
発明の効果
以上のように本発明は、吸湿性基板、−OH基
を有する物質で処理された基板、又は−OH基を
有する物質を真空蒸着により形成された基板上
に、フタロシアニナトシリコンジクロライドを真
空蒸着し、更に真空中で熱処理することにより良
好な配向性を有するシリコンフタロシアニンポリ
マー薄膜を形成することができ、その効果は大な
るものである。Effects of the Invention As described above, the present invention provides phthalocyaninatosilicon dichloride on a hygroscopic substrate, a substrate treated with a substance having an -OH group, or a substrate formed by vacuum evaporation of a substance having an -OH group. By vacuum evaporating and further heat-treating in vacuum, a silicon phthalocyanine polymer thin film with good orientation can be formed, and the effect is significant.
図は本発明の一実施例における、シリコンフタ
ロシアニンポリマー薄膜のIRスペクトル図であ
る。
The figure is an IR spectrum diagram of a silicon phthalocyanine polymer thin film in one example of the present invention.
Claims (1)
イドを真空蒸着した後、真空中で熱処理したこと
を特徴とするシリコンフタロシアニンポリマー薄
膜の製法。 ２ 基板が吸湿性を有することを特徴とする請求
項１記載のシリコンフタロシアニンポリマー薄膜
の製法。 ３ 吸湿性を有する基板がKBrであることを特
徴とする請求項１記載のシリコンフタロシアニン
ポリマー薄膜の製法。 ４ 基板が予め−OH基を有する物質で表面処理
されたことを特徴とする請求項１記載のシリコン
フタロシアニンポリマー薄膜の製法。 ５ 請求項１の基板上に−OH基を有する物質が
真空蒸着により予め形成されていることを特徴と
する請求項１記載のシリコンフタロシアニンポリ
マー薄膜の製法。[Claims] 1. A method for producing a silicon phthalocyanine polymer thin film, characterized in that phthalocyaninato silicon dichloride is vacuum-deposited on a substrate and then heat-treated in vacuum. 2. The method for producing a silicon phthalocyanine polymer thin film according to claim 1, wherein the substrate has hygroscopic properties. 3. The method for producing a silicon phthalocyanine polymer thin film according to claim 1, wherein the hygroscopic substrate is KBr. 4. The method for producing a silicon phthalocyanine polymer thin film according to claim 1, wherein the substrate is previously surface-treated with a substance having -OH groups. 5. The method for producing a silicon phthalocyanine polymer thin film according to claim 1, wherein the substance having an -OH group is previously formed on the substrate according to claim 1 by vacuum deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8289088A JPH01255660A (en) | 1988-04-06 | 1988-04-06 | Production of thin silicon phthalocyanine polymer film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8289088A JPH01255660A (en) | 1988-04-06 | 1988-04-06 | Production of thin silicon phthalocyanine polymer film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01255660A JPH01255660A (en) | 1989-10-12 |
| JPH0564711B2 true JPH0564711B2 (en) | 1993-09-16 |
Family
ID=13786868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8289088A Granted JPH01255660A (en) | 1988-04-06 | 1988-04-06 | Production of thin silicon phthalocyanine polymer film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01255660A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5544691B2 (en) * | 2008-08-05 | 2014-07-09 | 国立大学法人弘前大学 | Method for producing organic photocatalytic film |
-
1988
- 1988-04-06 JP JP8289088A patent/JPH01255660A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01255660A (en) | 1989-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |