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JPH06103675B2 - Wafer center positioning method in two-division cutting of semiconductor wafer - Google Patents
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JPH06103675B2 - Wafer center positioning method in two-division cutting of semiconductor wafer - Google Patents

Wafer center positioning method in two-division cutting of semiconductor wafer

Info

Publication number
JPH06103675B2
JPH06103675B2 JP29271490A JP29271490A JPH06103675B2 JP H06103675 B2 JPH06103675 B2 JP H06103675B2 JP 29271490 A JP29271490 A JP 29271490A JP 29271490 A JP29271490 A JP 29271490A JP H06103675 B2 JPH06103675 B2 JP H06103675B2
Authority
JP
Japan
Prior art keywords
wafer
semiconductor wafer
holding
cutting
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29271490A
Other languages
Japanese (ja)
Other versions
JPH04164322A (en
Inventor
芳次 新保
勉 佐藤
Original Assignee
直江津電子工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 直江津電子工業株式会社 filed Critical 直江津電子工業株式会社
Priority to JP29271490A priority Critical patent/JPH06103675B2/en
Publication of JPH04164322A publication Critical patent/JPH04164322A/en
Publication of JPH06103675B2 publication Critical patent/JPH06103675B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0094Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、半導体ウエハの2分割切断におけるウエハの
中心位置決め方法に関する。
TECHNICAL FIELD The present invention relates to a wafer center positioning method for two-division cutting of a semiconductor wafer.

さらに詳しくは、例えば、トランジスタ、ダイオード等
のディスクリート素子用基板を製造する中途工程とし
て、両面に拡散層等を有する半導体ウエハを厚み巾の中
心部から2分割に切断する際に、半導体ウエハを供給す
る供給機構から該ウエハを受取り保持する保持機構との
ウエハ引渡しを正確に中心を合致させ、確実に芯出し可
能ならしめる方法に関する。
More specifically, for example, as an intermediate step of manufacturing a substrate for discrete elements such as transistors and diodes, when a semiconductor wafer having diffusion layers on both sides is cut into two parts from the center of the thickness, the semiconductor wafer is supplied. The present invention relates to a method for accurately aligning the center of wafer transfer with a holding mechanism for receiving and holding the wafer from the supply mechanism, and ensuring proper centering.

[従来の技術] 従来、半導体ウエハの保持切断方法、とくにウエハの切
断機構の供給機構及び保持機構間のウエハ移動について
は、例えば、先に本出願人が特開平3−145726号により
提案している。
[Prior Art] Conventionally, a method of holding and cutting a semiconductor wafer, particularly a wafer movement between a supply mechanism and a holding mechanism of a wafer cutting mechanism, has been proposed by the applicant in Japanese Patent Laid-Open No. 3-145726. There is.

この本出願人の先提案は、ディスクリート素子用基板を
製造する中途工程としてのもので、インゴットからスラ
イスされ両面に不純物を拡散された半導体ウエハを厚み
巾の中心部から2分割に切断するものである。この切断
は、吸着機能を有する供給機構により供給された半導体
ウエハを同じく吸着機能を有する保持機構に垂直に保持
し、高速回転する内周型の回転切断刃を有する切断機構
により行なわれる。
This applicant's previous proposal is for an intermediate step of manufacturing a discrete device substrate, and is for cutting a semiconductor wafer sliced from an ingot and having impurities diffused on both sides into two parts from the center of the thickness width. is there. This cutting is performed by a cutting mechanism which holds a semiconductor wafer supplied by a supply mechanism having a suction function vertically in a holding mechanism which also has a suction function, and which has an inner peripheral rotary cutting blade that rotates at high speed.

[発明が解決しようとする課題] 前述の本出願人の先提案では、未加工(切断前)の半導
体ウエハが収納されている供給カセットの供給部からの
供給機構による半導体ウエハの取出し誤差等と供給機構
による保持機構までの移動誤差等とが累積され、供給機
構から保持機構への半導体ウエハの引渡しの際に半導体
ウエハの中心と保持機構の保持面の中心とが偏心する芯
ズレが生ずることがあり、第1図において、ウエハ供給
機構より引渡されたウエハは図中の切断刃の回転中心C
の位置より0位置まで良好な切断効率を得るため高速
(通常の切断速度の数倍)で近づくときに内周刃刃先に
当触し、ウエハはもとより内周刃を破断させてしまう恐
れがあるため、半導体ウエハの切断ストロークの開始位
置(図中のb)に余裕分を過大に設定しておかなければ
ならず、良好な切断効率という点において改善すべき点
を有している。
[Problems to be Solved by the Invention] In the above-mentioned prior proposal of the applicant, there is an error in taking out a semiconductor wafer by a supply mechanism from a supply unit of a supply cassette in which an unprocessed (before cutting) semiconductor wafer is stored. Accumulation of movement error to the holding mechanism by the supply mechanism, etc., and when the semiconductor wafer is transferred from the supply mechanism to the holding mechanism, a center misalignment occurs between the center of the semiconductor wafer and the center of the holding surface of the holding mechanism. In FIG. 1, the wafer delivered by the wafer supply mechanism is the center of rotation C of the cutting blade in the figure.
In order to obtain good cutting efficiency from the position of 0 to the position of 0, it may touch the inner edge of the inner edge when approaching at high speed (several times of the normal cutting speed), and may cause the inner edge of the wafer to be broken. Therefore, the margin must be set excessively at the starting position (b in the figure) of the cutting stroke of the semiconductor wafer, and there is a point to be improved in terms of good cutting efficiency.

さらに、供給機構から保持機構への半導体ウエハの引渡
しの際に供給機構、保持機構の吸着機能の動作切換えを
行なうが、動作切換えの連係が精密に行なわれないと、
半導体ウエハを保持機構に垂直に保持する、通称、横型
スライサーの装置では半導体ウエハが脱落して損傷して
しまうおそれがあるという改善すべき点を有している。
Further, when the semiconductor wafer is transferred from the supply mechanism to the holding mechanism, the operation of the suction function of the supply mechanism and the holding mechanism is switched, but if the operation switching is not coordinated precisely,
In a so-called horizontal slicer device that holds a semiconductor wafer vertically to a holding mechanism, the semiconductor wafer has a point to be improved in that the semiconductor wafer may be dropped and damaged.

本発明は、このような改善すべき点を考慮してなされた
もので、半導体ウエハを供給機構から保持機構へ引渡す
際の、半導体ウエハの正確な芯出し及び確実な保持を可
能にする方法を提供することを課題とする。
The present invention has been made in consideration of such points to be improved, and provides a method for accurately centering and reliably holding a semiconductor wafer when the semiconductor wafer is transferred from a supply mechanism to a holding mechanism. The challenge is to provide.

[課題を解決するための手段] 前述の課題を解決するため、本発明に係るウエハの中心
位置決め方法は、次のような手段を採用する。
[Means for Solving the Problems] In order to solve the above-mentioned problems, the wafer center positioning method according to the present invention employs the following means.

即ち、請求項1では、供給機構から引渡された半導体ウ
エハを保持機構で垂直に保持し、切断機構により前記ウ
エハを厚み巾の中心部から2分割に切断する半導体ウエ
ハの2分割切断において、前記保持機構の下方側に、保
持機構の垂直な保持面と直交する方向へ配設され配設方
向へ進退可能な少なくとも2個の先端部材を有する芯出
し機構を設け、前記供給機構が保持機構への半導体ウエ
ハの引渡しの際に、半導体ウエハを吸着盤から離脱させ
芯出し機構の突出させている前記先端部材上に落下当接
させることにより中心位置決め動作をさせ、その先端部
材上で位置決め動作が終了した半導体ウエハを押動させ
て保持機構の保持面に保持させ、芯出し機構の先端部材
を後退させて切断刃の切断作用面から回避させることを
特徴とする。
That is, in claim 1, in the two-divided cutting of the semiconductor wafer in which the semiconductor wafer delivered from the supply mechanism is vertically held by the holding mechanism, and the wafer is cut into two from the center of the thickness width by the cutting mechanism, Provided below the holding mechanism is a centering mechanism having at least two tip members arranged in a direction orthogonal to a vertical holding surface of the holding mechanism and capable of advancing and retracting in the arranging direction. When the semiconductor wafer is delivered, the semiconductor wafer is detached from the suction plate and is dropped and brought into contact with the tip member protruding from the centering mechanism to perform center positioning operation, and the positioning operation is performed on the tip member. It is characterized in that the completed semiconductor wafer is pushed and held on the holding surface of the holding mechanism, and the tip end member of the centering mechanism is retracted to avoid the cutting action surface of the cutting blade.

また、請求項2では、請求項1記載のウエハの中心位置
決め方法において、半導体ウエハが両面に不純物拡散層
を形成する等にして、厚み方向へ材質的な変化を伴ない
ウエハの厚みの中心線に対して対称的な材質特性を有し
ていることを特徴とする。
According to a second aspect of the present invention, in the method of centering a wafer according to the first aspect, the center line of the thickness of the wafer does not change in the thickness direction by forming impurity diffusion layers on both sides of the semiconductor wafer. It is characterized by having material properties symmetrical with respect to.

[作用] 前述の手段によると、請求項1では、半導体ウエハの自
重による落下で芯出し機構の突出させている先端部材に
当接させることにより、極めて簡略された形態で芯ズレ
を修正し正確な中心位置決め(芯出し)動作を行なうと
共に、芯出しの終了した半導体ウエハを供給機構の吸着
盤より押動動作で保持機構の保持面へ軽く保持面へ軽く
押圧する半導体ウエハ引渡しの補助動作を行なうことか
ら、半導体ウエハの脱落を防止して確実に供給機構から
保持機構へ引渡し保持することになる。そして、保持機
構の先端部材が切断機構を回避することができるように
したことから、芯出し機構の装備によって切断時野各部
の動作が阻害されないことになる。
[Operation] According to the above-mentioned means, according to the first aspect, the semiconductor wafer is dropped by its own weight and brought into contact with the projecting tip member of the centering mechanism to correct the center misalignment in an extremely simplified form. The centering (centering) operation is performed, and the semiconductor wafer delivery auxiliary operation is performed in which the centered semiconductor wafer is pushed from the suction plate of the supply mechanism to the holding surface of the holding mechanism and gently to the holding surface. As a result, the semiconductor wafer is prevented from falling off and is reliably delivered and held from the supply mechanism to the holding mechanism. Since the tip member of the holding mechanism can avoid the cutting mechanism, the equipment of the centering mechanism does not hinder the operation of each part during the cutting.

また、請求項2では、両面に不純物が拡散されたような
半導体ウエハ等に好適である。
Further, the second aspect is suitable for a semiconductor wafer or the like in which impurities are diffused on both sides.

[実施例] 以下、本発明に係る半導体ウエハの中心位置決め方法の
実施例を図面に基づいて説明する。
[Embodiment] An embodiment of a method for centering a semiconductor wafer according to the present invention will be described below with reference to the drawings.

この実施例は、第1図、第2図に示すように、バキュー
ムによる吸着機能を有する供給機構1、保持機構2を備
えた横型の実施装置例で、保持盤中心を原点0とし、x,
y,z方向を図示してある。
As shown in FIGS. 1 and 2, this embodiment is an example of a horizontal type embodiment apparatus having a supply mechanism 1 and a holding mechanism 2 having a suction function by vacuum.
The y and z directions are shown.

この実施装置例の供給機構1は、バキュームポンプ(図
示せず)に接続し、かつ適時にエアー吹出し可能なゴム
材等の弾力性を有する材質で円吸盤形に形成された吸着
盤12を有している。
The supply mechanism 1 of this embodiment has an adsorption disk 12 connected to a vacuum pump (not shown) and formed into a circular suction disk shape with an elastic material such as a rubber material capable of blowing air at appropriate times. is doing.

この供給機構1は、バキュームによる真空吸着又はエア
ー吹出しにより吸着盤12で未加工の半導体ウエハWの片
面を吸着又は離脱することが可能であり、吸着盤12に連
結したアーム11及び移動駆動部等(図示せず)により供
給カセット等の供給部から未加工の半導体ウエハWを取
出し保持機構2まで移動させるものである。
The supply mechanism 1 is capable of adsorbing or detaching one side of an unprocessed semiconductor wafer W on an adsorption disk 12 by vacuum adsorption by vacuum or air blowing, and an arm 11 connected to the adsorption disk 12 and a movement drive unit. The unprocessed semiconductor wafer W is taken out from a supply unit such as a supply cassette (not shown) and moved to the holding mechanism 2.

この実施装置例の保持機構2は、ポーラスなセラミック
ス等で平坦な保持面が形成され、バキュームポンプ(図
示せず)に接続したチャンバ21の片側に取付けられ保持
盤22を有している。この保持機構2は、バキュームの断
続により保持盤22で未加工の半導体ウエハWの片面を吸
着保持、離脱することが可能である。そして供給機構1
より保持機構2へのウエハの引渡しは切断刃の回転軸中
心上で行われ、その後切断効率の向上のため切断刃刃先
との距離bまで高速で接近し、図示していないが、保持
した半導体ウエハWの厚み巾の中心部を切断機構3の切
断刃3′の切断作用面への割出す(y方向)位置送り機
構と、保持した半導体ウエハWの切断のための移動(x
方向)をする切断送り機構により2分割に切断される。
The holding mechanism 2 of this embodiment example has a flat holding surface made of porous ceramics or the like, and has a holding plate 22 attached to one side of a chamber 21 connected to a vacuum pump (not shown). The holding mechanism 2 is capable of sucking and holding one side of the unprocessed semiconductor wafer W on the holding plate 22 by suction and release of the vacuum by intermittent holding of the vacuum. And supply mechanism 1
The delivery of the wafer to the holding mechanism 2 is performed on the center of the rotation axis of the cutting blade, and then the distance b to the cutting blade edge is rapidly approached to improve the cutting efficiency. A position feeding mechanism for indexing the central portion of the thickness width of the wafer W to the cutting action surface of the cutting blade 3'of the cutting mechanism 3 (y direction), and a movement for cutting the held semiconductor wafer W (x
It is cut into two parts by the cutting feed mechanism that performs the direction.

切断機構3は、高速回転する内周型の切断刃3′を有し
ている。
The cutting mechanism 3 has an inner peripheral cutting blade 3 ′ that rotates at high speed.

これ等供給機構1、保持機構2、切断機構3は、前述の
本出願人の先提案と基本構成は同一であるが、さらに保
持機構2についてその下方側に芯出し機構4を設け、正
確で平易な芯出しを可能にすることが本発明の特徴とな
っている。
The supply mechanism 1, the holding mechanism 2, and the cutting mechanism 3 have the same basic structure as the previous proposal of the applicant of the present invention, but the holding mechanism 2 is further provided with a centering mechanism 4 on the lower side thereof, which is accurate. The feature of the present invention is to enable easy centering.

この芯出し機構4は、4弗化エチレン樹脂等で断面L字
形に形成され、保持機構2の保持盤22の保持面の中心点
Oを中心とし、その保持平面と直交する方向へ配設され
た2個の先端部材41と、先端部材41を配設方向(保持面
と直交する方向)へエアシリンダ等で移動可能にチャン
バ21に支持された駆動部42とからなる。従って、従来の
装置構成に対し芯出し機構4を簡素に組込むことができ
る。
The centering mechanism 4 is made of tetrafluoroethylene resin or the like and has an L-shaped cross section, and is arranged in a direction orthogonal to the holding plane about the center O of the holding surface of the holding plate 22 of the holding mechanism 2. It is composed of two tip members 41 and a drive unit 42 supported by the chamber 21 so that the tip members 41 can be moved in the arrangement direction (direction orthogonal to the holding surface) by an air cylinder or the like. Therefore, the centering mechanism 4 can be easily incorporated into the conventional device configuration.

また、このような実施装置例の切断対象とされる半導体
ウエハWは、両面に不純物が拡散されたディスクリート
素子基板製造用のものに限られず、SO1基板のような無
欠陥ウエハの両面からSiO2膜を介して2枚の支持基板に
接着されている複合ウエハの切断にも利用できる。
Further, the semiconductor wafer W to be cut in such an example of the embodiment apparatus is not limited to the one for manufacturing a discrete element substrate in which impurities are diffused on both sides, and SiO 2 can be formed on both sides of a defect-free wafer such as an SO 1 substrate. It can also be used to cut a composite wafer that is adhered to two supporting substrates via a film.

なお、第1図においては、半導体ウエハWの切断終了端
に補強用の当板W′を取付けたものを示し、芯出し機構
と干渉し合わないことを示してある。
Note that FIG. 1 shows a semiconductor wafer W having a cutting end W to which a reinforcing contact plate W'is attached, which does not interfere with the centering mechanism.

而して本発明の動作を第3図により説明すると、芯出し
機構4の駆動部42を制御して先端部材41を保持盤22より
突出する前進位置へ移動させておき、供給機構1の吸着
盤12に未加工の半導体ウエハWを吸着した状態で、保持
盤22の前面へ上方から下降させ供給する(第3図A1
A2)。
The operation of the present invention will be described with reference to FIG. 3. The drive unit 42 of the centering mechanism 4 is controlled to move the tip end member 41 to the forward position where it projects from the holding plate 22, and the suction mechanism of the supply mechanism 1 is sucked. While the unprocessed semiconductor wafer W is adsorbed on the board 12, it is lowered and supplied to the front surface of the holding board 22 (see FIG. 3, A 1 ,
A 2 ).

下降する半導体ウエハWが先端部材41上の一定間隔dに
達した位置で停止し、吸着盤12を短ストロークシリンダ
等(図示せず)により所定距離aを保持盤22へ接近さ
せ、その位置において吸着盤12の真空吸着を停止し、逆
エアー吹出し動作を起動させることによって、半導体ウ
エハWを先端部材41上へ落下せしめ、それにより半導体
ウエハWの中心と保持盤22の保持面中心との芯合せがな
される(第3図B)。
The descending semiconductor wafer W is stopped at a position where it reaches a certain distance d on the tip member 41, and the suction plate 12 is brought closer to the holding plate 22 by a short stroke cylinder or the like (not shown), and at that position. The vacuum suction of the suction disk 12 is stopped and the reverse air blowing operation is activated to drop the semiconductor wafer W onto the tip member 41, whereby the center between the center of the semiconductor wafer W and the center of the holding surface of the holding disk 22. Matching is done (FIG. 3B).

(尚、上記半導体ウエハWの落下域dは僅小(数mm)で
あるため、ウエハWの損傷は生じない。) 先端部材41上に落下した半導体ウエハWは、前記吸着盤
12の継続するエアー吹出し動作により先端部材41をガイ
ドとして保持盤22方向へ軽く押され、同時に起動する保
持盤22の真空吸着作用によって両者の芯合せ状態が維持
されたまま半導体ウエハWは保持盤22に吸着保持される
(第3図C)。
(Because the falling area d of the semiconductor wafer W is small (several mm), the wafer W is not damaged.) The semiconductor wafer W dropped on the tip member 41 is the suction plate.
With the continuous air blowing operation of 12, the tip member 41 is gently pushed toward the holding plate 22 with the tip member 41 as a guide, and the semiconductor wafer W is held on the holding plate 22 while the alignment of the two is maintained by the vacuum suction action of the holding plate 22 which is activated at the same time. It is adsorbed and held by 22 (Fig. 3C).

その後、切断工程の開始に備えて、先端部材41は駆動部
42によりリトラクトし、吸着盤12も上方へ移動する(第
3図D)。
Then, in preparation for the start of the cutting process, the tip member 41 is driven by
It is retracted by 42, and the suction plate 12 also moves upward (FIG. 3D).

半導体ウエハWを吸着保持した保持機構2は位置送り機
構(図示せず)により図中左方へ移動してウエハWの厚
み巾の中心に前記切断刃3′が位置するように切断送り
機構(図示せず)の駆動によって切断工程が開始し、該
工程の終了時に保持機構2がリトラクトし、保持盤22か
ら2分割された加工済の半導体ウエハが回収された後
に、第3図A1,A2に示す新たな未加工ウエハの供給動作
を開始し、如何前述した動作をくり返す。
The holding mechanism 2 that sucks and holds the semiconductor wafer W is moved leftward in the drawing by a position feeding mechanism (not shown) so that the cutting blade 3'is positioned at the center of the thickness width of the wafer W ( A cutting process is started by driving (not shown), and the holding mechanism 2 is retracted at the end of the process, and after the processed semiconductor wafer divided into two parts is collected from the holding plate 22, A 1 , FIG. The operation of supplying a new unprocessed wafer shown in A 2 is started, and the operation described above is repeated.

[発明の効果] 以上のように本発明によれば、請求項1では、芯出し機
構により芯ズレを修正する芯出し動作を行なうと共に、
芯出し機構,供給機構及び保持機構により半導体ウエハ
の落下距離を規制しかつ半導体ウエハの取扱いがソフト
になるため、半導体ウエハの損傷が防止されると共に、
半導体ウエハを正確、確実に供給機構から保持機構へ引
渡すことができる効果がある。また、この効果により、
半導体ウエハの切断効率が良好となる効果が生ずる。
[Advantages of the Invention] As described above, according to the present invention, in claim 1, while performing the centering operation for correcting the center misalignment by the centering mechanism,
The centering mechanism, the supply mechanism, and the holding mechanism regulate the falling distance of the semiconductor wafer and the handling of the semiconductor wafer becomes soft, so that the semiconductor wafer is prevented from being damaged, and
The semiconductor wafer can be delivered from the supply mechanism to the holding mechanism accurately and reliably. Also, due to this effect,
The effect of improving the cutting efficiency of the semiconductor wafer occurs.

さらに、芯出し機構の構造を簡素化することができる効
果がある。
Further, there is an effect that the structure of the centering mechanism can be simplified.

さらに、請求項2では、ディスクリート素子用基板の製
造に有効に寄与することができる効果がある。
Further, in claim 2, there is an effect that it can effectively contribute to the manufacture of the discrete element substrate.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明に係る半導体ウエの2分割切断における
ウエハの中心位置決め方法の実施例を示す正面図、第2
図は第1図の側面図、第3図A1,B,C,Dは本発明の動作を
説明する側面図、第3図A2は第3図A1の正面図である。 1…供給機構、2…保持機構 3…切断機構、4…芯出し機構 W…半導体ウエハ
FIG. 1 is a front view showing an embodiment of a wafer center positioning method in a semiconductor wafer divided into two pieces according to the present invention.
The figure is a side view of FIG. 1 , FIG. 3 A 1 , B, C, D are side views for explaining the operation of the present invention, and FIG. 3 A 2 is a front view of FIG. 3 A 1 . DESCRIPTION OF SYMBOLS 1 ... Supply mechanism, 2 ... Holding mechanism 3 ... Cutting mechanism, 4 ... Centering mechanism W ... Semiconductor wafer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】供給機構から保持機構へ半導体ウエハを引
渡し該保持機構でウエハの片面を垂直に保持し、内周型
の回転切断刃を有する切断機構により前記ウエハを厚み
巾の中心部から2分割に切断する際の保持機構のウエハ
の中心位置決め方法において、 前記保持機構の下方側に、保持機構の垂直な保持面と直
交する方向へ配設され配設方向へ進退可能な少なくとも
2個の先端部材を有する芯出し機構を設け、 前記供給機構が保持機構への半導体ウエハの引渡しの際
に、半導体ウエハを吸着盤から離脱させ芯出し機構の突
出している前記先端部材上に落下当接させることによ
り、半導体ウエハの中心と保持機構の保持面の中心とを
一致させる中心位置決めをなし保持機構の保持面に押動
させて、保持機構がウエハを保持した時に前記芯出し機
構の先端部材を後退させ、切断機構の切断刃の切断作用
面から回避させる、 ことを特徴とするウエハの中心位置決め方法。
1. A semiconductor wafer is passed from a supply mechanism to a holding mechanism, one side of the wafer is held vertically by the holding mechanism, and the wafer is moved from the center of the width to a width of 2 by a cutting mechanism having an inner peripheral rotary cutting blade. In the method of centrally positioning a wafer of a holding mechanism when cutting into divided pieces, at least two pieces which are arranged below the holding mechanism in a direction orthogonal to a vertical holding surface of the holding mechanism and which can move forward and backward in the arrangement direction. A centering mechanism having a tip member is provided, and when the supply mechanism delivers the semiconductor wafer to the holding mechanism, the semiconductor wafer is detached from the suction plate and dropped onto the projecting tip member of the centering mechanism. By doing so, the center of the semiconductor wafer and the center of the holding surface of the holding mechanism are aligned with each other, and the wafer is pushed to the holding surface of the holding mechanism, and when the holding mechanism holds the wafer, the centering is performed. Retracting the tip member of the structure, thereby avoiding the cutting action face of the cutting blade of the cutting mechanism, the center positioning method of a wafer, characterized in that.
【請求項2】請求項1において、半導体ウエハは厚み方
向へ材質的な変化を伴ないウエハの厚みの中心線に対し
て対称的な材質特性を有していることを特徴とするウエ
ハの中心位置決め方法。
2. The center of a wafer according to claim 1, wherein the semiconductor wafer has a material characteristic symmetrical with respect to a center line of the thickness of the wafer, which is not accompanied by a material change in the thickness direction. Positioning method.
JP29271490A 1990-10-29 1990-10-29 Wafer center positioning method in two-division cutting of semiconductor wafer Expired - Fee Related JPH06103675B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29271490A JPH06103675B2 (en) 1990-10-29 1990-10-29 Wafer center positioning method in two-division cutting of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29271490A JPH06103675B2 (en) 1990-10-29 1990-10-29 Wafer center positioning method in two-division cutting of semiconductor wafer

Publications (2)

Publication Number Publication Date
JPH04164322A JPH04164322A (en) 1992-06-10
JPH06103675B2 true JPH06103675B2 (en) 1994-12-14

Family

ID=17785363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29271490A Expired - Fee Related JPH06103675B2 (en) 1990-10-29 1990-10-29 Wafer center positioning method in two-division cutting of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH06103675B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5802072B2 (en) * 2011-07-26 2015-10-28 株式会社岡本工作機械製作所 Cutting method for processing cylindrical ingot block into square columnar block

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210727A (en) * 1988-06-28 1990-01-16 Naoetsu Denshi Kogyo Kk Method and apparatus for dividing semiconductor wafer

Also Published As

Publication number Publication date
JPH04164322A (en) 1992-06-10

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