JPH0628240B2 - Metalorganic vapor phase growth equipment - Google Patents
Metalorganic vapor phase growth equipmentInfo
- Publication number
- JPH0628240B2 JPH0628240B2 JP29397687A JP29397687A JPH0628240B2 JP H0628240 B2 JPH0628240 B2 JP H0628240B2 JP 29397687 A JP29397687 A JP 29397687A JP 29397687 A JP29397687 A JP 29397687A JP H0628240 B2 JPH0628240 B2 JP H0628240B2
- Authority
- JP
- Japan
- Prior art keywords
- growth chamber
- lid
- wafer
- growth
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001947 vapour-phase growth Methods 0.000 title description 4
- 238000002360 preparation method Methods 0.000 claims description 15
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 239000000498 cooling water Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は有機金属気相成長法（Ｍｅｔａｌ Ｏｒｇａｎ
ｉｃ Ｖａｐｏｒ Ｐｈａｓｅ Ｅｐｉｔａｘｙ，以
下、ＭＯＶＰＥ法と略記する）を実施するための縦型気
相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention is directed to metalorganic vapor phase epitaxy (Metal Organ).
ic Vapor Phase Epitaxy, hereinafter abbreviated as MOVPE method).
（従来の技術） 半導体装置の製造には、半導体基板上に半導体単結晶を
エピタキシャル成長させる方法が広く用いられている。
このエピタキシャル成長法のなかで、有機金属気相成長
法は、制御性がよく大量生産にも向いているところか
ら、半導体産業の中で重要な地位を占めつつある。この
方法はトリメチルガリウム（Ｇａ（ＣＨ3）3）やトリメ
チルアルミニウム（Ａｌ（ＣＨ3）3）等の有機金属ガス
とアルシン（ＡｓＨ3）やホスフイン（ＰＨ3）を原料と
して、それを熱分解させてエピタキシャル成長させる方
法である。この方法により製造されるエピタキシャル層
の特性は、成長装置内の雰囲気に強く依存する。即ち、
アルミニウムやアンチモン等の酸化し易い成分を含む半
導体の製造は、酸素や水分が僅か残留しても結晶の特性
を著しく劣化する。そこで、成長室内に酸素や水分の侵
入を防ぐために成長室を石英製からステンレス等の金属
製に変更し、配管継手部を溶接で接続するなど気密性を
高める方策がとられている。この金属製の成長室は強度
も大きく安全面からも好ましいものである。また、真空
準備室を設けて酸素、水分等の不純物を除いた後、ウエ
ハを成長室に移したりすることが行われてきた。(Prior Art) A method of epitaxially growing a semiconductor single crystal on a semiconductor substrate is widely used for manufacturing a semiconductor device.
Among these epitaxial growth methods, the metal organic chemical vapor deposition method is occupying an important position in the semiconductor industry because it has good controllability and is suitable for mass production. This method uses organic metal gas such as trimethylgallium (Ga (CH 3 ) 3 ) or trimethylaluminum (Al (CH 3 ) 3 ) and arsine (AsH 3 ) or phosphine (PH 3 ) as a raw material and thermally decomposes them. Is a method of epitaxial growth. The characteristics of the epitaxial layer produced by this method strongly depend on the atmosphere in the growth apparatus. That is,
In the manufacture of a semiconductor containing a component such as aluminum or antimony that easily oxidizes, even if a small amount of oxygen or water remains, the crystal characteristics are significantly deteriorated. Therefore, in order to prevent oxygen and moisture from entering the growth chamber, measures such as changing the growth chamber from quartz to a metal such as stainless steel and connecting pipe joints by welding have been taken. This metal growth chamber has high strength and is preferable from the viewpoint of safety. In addition, a vacuum preparation chamber is provided to remove impurities such as oxygen and water, and then the wafer is transferred to a growth chamber.
（発明が解決しようとする問題点） しかし、この種の装置では、成長室に至る搬送管内がデ
ッドスペースとなり、成長室内の原料ガス流を乱す原因
となり、また、搬送管に設けたゲートバルブのシール部
に反応生成物が付着して、バルブの機密性を不完全なも
のとし、真空準備室の機能を低下させるなどの問題点が
あった。(Problems to be solved by the invention) However, in this type of device, the inside of the transfer pipe leading to the growth chamber becomes a dead space, which causes disturbance of the raw material gas flow in the growth chamber, and also the gate valve provided in the transfer pipe. There is a problem that the reaction product adheres to the seal portion, the airtightness of the valve becomes incomplete, and the function of the vacuum preparation chamber is deteriorated.
本発明は、上記問題点を解消し、高純度の均一なエピタ
キシャル層の形成を可能とする有機金属気相成長装置を
提供しようとするものである。The present invention is intended to solve the above-mentioned problems and to provide a metal-organic chemical vapor deposition apparatus capable of forming a highly pure uniform epitaxial layer.
（問題点を解決するための手段） 本発明は、縦型成長室の中央に半導体ウエハを装着する
回転式サセプタを配置し、該ウエハ上にエピタキシャル
成長を行う有機金属気相成長装置において、ウエハを予
め真空保持する真空準備室を設け、ゲートバルブを有す
る搬送管によって真空準備室と成長室を接続し、該搬送
管を介して成長室のサセプタにウエハを搬送する搬送機
構を設け、成長室の搬送用開口部に開閉可能な蓋を設
け、該蓋の内面は成長室内壁と同一材料で構成し、か
つ、蓋の装着時には成長室内壁と連続する滑らかな面を
有し、上記搬送管には蓋を移動して収納するための枝管
を付設し、枝管若しくは搬送管を真空排気系と接続する
ことを特徴とする有機金属気相成長装置である。(Means for Solving the Problems) The present invention is a metal-organic chemical vapor deposition apparatus in which a rotary susceptor for mounting a semiconductor wafer is arranged in the center of a vertical growth chamber and epitaxial growth is performed on the wafer. A vacuum preparation chamber for holding a vacuum in advance is provided, the vacuum preparation chamber and the growth chamber are connected by a transfer pipe having a gate valve, and a transfer mechanism for transferring a wafer to the susceptor of the growth chamber via the transfer pipe is provided. The transfer opening is provided with a lid that can be opened and closed, and the inner surface of the lid is made of the same material as the growth chamber inner wall, and has a smooth surface that is continuous with the growth chamber inner wall when the cover is mounted. Is a metal-organic vapor phase epitaxy apparatus characterized in that a branch pipe for moving and accommodating a lid is attached, and the branch pipe or the transfer pipe is connected to a vacuum exhaust system.
（作用） 第一図は、本発明の１具体例である有機金属気相成長装
置の正面断面図である。エピタキシャル成長用半導体ウ
エハ１７はホルダ７にセットされ、該ホルダ７はカセッ
ト８に納められ、扉５を開けて該カセット８はレール９
に沿って真空準備室２に挿入される。扉５を閉じた後、
上記準備室２は真空排気系３と接続して排気される。一
方、ステンレス製の成長室１５は別の真空排気系２０に
より真空に保持されている。上記準備室２及び成長室１
５を接続する搬送管１３のゲートバルブ６を開け、ウエ
ハ１７をホルダ７とともに搬送装置１によってカセット
８から取り出し、成長室１５内のサセプタ１６に装着す
る。第一図のサセプタ１６はウエハホルダー７を４つ保
持して、回転機構２１により回転する。成長室１５の周
囲には冷却水流路２２を設け、入口１１から冷却水を導
入して出口１０から排出する。ウエハ１７の加熱用ヒー
タ１８はサセプタ１６の内側に設け、その端子１９を成
長室１５から引き出してある。そして、成長室１５の頂
部は導管を介して原料ガス供給系４と接続している。一
方、成長室１５の搬送用開口部には、蓋１２が設けられ
ている。この蓋１２は成長室１５と同じ材料で作られて
おり、その内面は閉じた状態において成長室１５の内壁
の一部として滑らかな面を形成する。そして、蓋１２は
冷却水流路を有し、流路に接続する冷却水導管２４によ
り背面より支持される。この冷却水導管２４は、上記搬
送管１３に付設する枝管２３を通って外部に引き出され
ており、枝管２３のベロー２５の底部に固定されて駆動
装置２６により前後に移動することができる。従って、
蓋１２は搬送用開口部を閉じた状態から、図のように枝
管２３内に収納することにより、搬送機構１の腕を真空
準備室２から成長室１５のサセプタ１６まで伸ばすこと
ができる。なお、枝管２３は成長室１５の真空排気系２
０と導管１４で接続されており、成長室１５と同様に真
空が保持される。それ故、蓋１２は格別な気密性を要求
されない。(Operation) FIG. 1 is a front sectional view of a metal-organic vapor phase epitaxy apparatus which is one specific example of the present invention. The semiconductor wafer 17 for epitaxial growth is set in a holder 7, the holder 7 is placed in a cassette 8, the door 5 is opened, and the cassette 8 is moved to a rail 9.
And is inserted into the vacuum preparation chamber 2. After closing the door 5,
The preparation chamber 2 is connected to the vacuum exhaust system 3 and is exhausted. On the other hand, the growth chamber 15 made of stainless steel is kept in vacuum by another vacuum exhaust system 20. Preparation room 2 and growth room 1
The gate valve 6 of the transfer pipe 13 for connecting 5 is opened, the wafer 17 together with the holder 7 is taken out of the cassette 8 by the transfer device 1, and mounted on the susceptor 16 in the growth chamber 15. The susceptor 16 of FIG. 1 holds four wafer holders 7 and is rotated by the rotating mechanism 21. A cooling water channel 22 is provided around the growth chamber 15, and cooling water is introduced from the inlet 11 and discharged from the outlet 10. The heater 18 for heating the wafer 17 is provided inside the susceptor 16, and its terminal 19 is drawn out from the growth chamber 15. The top of the growth chamber 15 is connected to the source gas supply system 4 via a conduit. On the other hand, the lid 12 is provided at the transfer opening of the growth chamber 15. The lid 12 is made of the same material as the growth chamber 15, and the inner surface thereof forms a smooth surface as a part of the inner wall of the growth chamber 15 in the closed state. The lid 12 has a cooling water channel and is supported from the back by a cooling water conduit 24 connected to the channel. The cooling water conduit 24 is drawn out through a branch pipe 23 attached to the carrier pipe 13, is fixed to the bottom of a bellows 25 of the branch pipe 23, and can be moved back and forth by a drive device 26. . Therefore,
The lid 12 can be extended from the vacuum preparatory chamber 2 to the susceptor 16 of the growth chamber 15 by accommodating the lid 12 in the branch pipe 23 as shown in the figure with the transport opening closed. The branch pipe 23 is the vacuum exhaust system 2 of the growth chamber 15.
0 and the conduit 14 are connected, and a vacuum is maintained like the growth chamber 15. Therefore, the lid 12 does not need to be particularly airtight.
このような蓋の採用により、ウエハの搬送時のみ該蓋を
開放するが、成長時には搬送管のデッドスペースを排除
し、滑らかな成長室内面を確保し、かつ、成長室を均一
に冷却することができるので、成長室の頂部から流下す
る原料ガス流を乱すこともなく、ウエハ上に均一なエピ
タキシャル成長を可能とする。また、この蓋によりゲー
トバルブが保護されるので、反応生成物がゲートバルブ
のシール部に付着することもなく気密が保持される。By adopting such a lid, the lid is opened only when the wafer is transferred, but the dead space of the transfer tube is eliminated during growth, a smooth growth chamber inner surface is secured, and the growth chamber is cooled uniformly. Therefore, it is possible to perform uniform epitaxial growth on the wafer without disturbing the raw material gas flow flowing down from the top of the growth chamber. Further, since the gate valve is protected by this lid, the airtightness is maintained without the reaction product adhering to the seal portion of the gate valve.
所定の成長を終了した時に、成長室１５の温度を下げ、
真空排気した後、ゲートバルブ６を開けて搬送装置１に
よりウエハ１７をホルダ７とともにサセプタ１６から取
り出して真空準備室２のカセット８に回収し、ゲートバ
ルブ６を閉じてから、大気圧にリークして扉５を開けて
ウエハ１７を外部に取り出す。When the predetermined growth is completed, the temperature of the growth chamber 15 is lowered,
After vacuum evacuation, the gate valve 6 is opened, the wafer 17 is taken out from the susceptor 16 together with the holder 7 by the transfer device 1 and collected in the cassette 8 in the vacuum preparation chamber 2, and after the gate valve 6 is closed, it leaks to the atmospheric pressure. Door 5 is opened to take out the wafer 17 to the outside.
（実施例） ステンレス製の成長室を採用した第一図の気相成長装置
を用いて、ＧａＡｓウエハにＧａＡｓ層及びＡｌ0.3Ｇ
ａ0.4Ａｓ層をエピタキシャル成長により形成してＨＥ
ＭＴ構造を作成した。３インチのＧａＡｓウエハをホル
ダにセットして真空準備室に移り、該室内を１０-5〜１
０-6Ｔｏｒｒに真空排気した。一方、成長室は１０-8Ｔ
ｏｒｒ台まで真空排気されており、ゲートバルブを開け
て、ウエハをホルダとともに真空準備室から成長室に移
し、サセプタにセットした。その後、成長室の冷却水流
路に冷却水を流し、ヒータに通電してウエハを加熱し
て、ウエハの温度を成長温度である６８０℃とした。そ
れから、搬送管の蓋をして、サセプタを回転速度１５ｒ
ｐｍで回転させながら原料ガスを成長室の頂部から流し
て気相成長を行った。原料ガス組成は、ＧａＡｓ層の形
成時に、０℃に保持したトリメチルガリウムを水素でバ
ブリングしたガスを１５．０ｃｃ／分、水素ベース１０
％アルシンを１０００ｃｃ／分を１００分間流し、ま
た、Ａｌ0.3Ｇａ0.7Ａｓ層の形成時には、２０℃に保持
したトリメチルアルミニウムを水素でバブリングしたガ
スを２０ｃｃ／分、０℃に保持したトリメチルガリウム
を水素でバブリングしたガスを１５．０ｃｃ／分、水素
ベース１０％アルシンを１０００ｃｃ／分を９０分間流
した。まず、上記の成長を圧力１０Ｔｏｒｒの条件で交
互に５回繰り返して慣らし運転を行った。その後、上記
と同様な条件でエピタキシャル成長を行い、ＨＥＭＴ構
造を作成した。得られたウエハは、液体窒素温度におけ
るシートキャリア濃度が７×１０11ｃｍ-2、移動度が８
５，０００ｃｍ2／Ｖｓｅｃであり、ウエハ面内のバラ
ツキは約５％以下と良好な結果を得た。(Example) Using the vapor phase growth apparatus of FIG. 1 which adopted a growth chamber made of stainless steel, a GaAs layer and Al 0.3 G were formed on a GaAs wafer.
a 0.4 As layer is formed by epitaxial growth and HE
The MT structure was created. A 3-inch GaAs wafer is set in the holder and moved to the vacuum preparation chamber, and the chamber is set to 10 -5 to 1
It was evacuated to 0 -6 Torr. On the other hand, the growth chamber is 10 -8 T
The wafer was evacuated to the orr level, the gate valve was opened, the wafer together with the holder was moved from the vacuum preparation chamber to the growth chamber, and set on the susceptor. Then, cooling water was caused to flow in the cooling water flow path of the growth chamber, the heater was energized to heat the wafer, and the temperature of the wafer was set to 680 ° C. which is the growth temperature. Then, cover the transfer tube and rotate the susceptor at a rotation speed of 15r.
The raw material gas was caused to flow from the top of the growth chamber while rotating at pm for vapor phase growth. The source gas composition was 15.0 cc / min for a gas obtained by bubbling trimethylgallium held at 0 ° C. with hydrogen when the GaAs layer was formed, and the hydrogen base 10
% Arsine was flowed at 1000 cc / min for 100 minutes, and when forming an Al 0.3 Ga 0.7 As layer, a gas obtained by bubbling trimethylaluminum kept at 20 ° C. with hydrogen was added at 20 cc / min, and trimethylgallium kept at 0 ° C. was hydrogenated. The gas bubbled at 15.0 cc / min and the hydrogen-based 10% arsine at 1000 cc / min were flowed for 90 minutes. First, the above-described growth was alternately repeated 5 times under a pressure of 10 Torr to perform a break-in operation. After that, epitaxial growth was performed under the same conditions as described above to form a HEMT structure. The obtained wafer had a sheet carrier concentration of 7 × 10 11 cm -2 and a mobility of 8 at the liquid nitrogen temperature.
The result was 5,000 cm 2 / Vsec, and the variation within the wafer surface was about 5% or less, which is a good result.
その後、８０回上記のエピタキシャル成長を繰り返した
が、結晶特性に大きな変動はなく、良質なエピタキシャ
ル層を得た。その際、成長室内壁には反応生成物が相当
付着していたが、ゲートバルブのシート面のリークは認
められず、真空準備室を大気圧に戻した状態で、成長室
内の圧力は６×１０-7Ｔｏｒｒと真空が保持されてい
た。After that, the above epitaxial growth was repeated 80 times, but the crystal characteristics did not change significantly, and a high-quality epitaxial layer was obtained. At that time, reaction products were considerably attached to the inner wall of the growth chamber, but no leak was observed on the seat surface of the gate valve, and the pressure in the growth chamber was 6 × with the vacuum preparation chamber returned to atmospheric pressure. A vacuum of 10 −7 Torr was maintained.
（発明の効果） 本発明は、上記構成を採用することにより、金属製の成
長室と真空準備室を用いた気相成長装置において、気密
性の向上により不純物の混入を防ぎ、かつ、成長室内の
円滑なガス流を保証することにより、長期間にわたって
高純度の均質なエピタキシャル層を再現性よく形成する
ことができるようになった。(Advantageous Effects of the Invention) The present invention, by adopting the above-described configuration, in a vapor phase growth apparatus using a metal growth chamber and a vacuum preparation chamber, prevents the mixing of impurities by improving the airtightness, and By ensuring a smooth gas flow of, it has become possible to form a high-purity homogeneous epitaxial layer with good reproducibility over a long period of time.
第一図は本発明の一つの具体例である有機金属気相成長
装置の断面図である。 １：搬送装置、２：真空準備室、３：真空排気系、４：
原料ガス供給系、５：扉、６：ゲートバルブ、７：ホル
ダー、８：カセット、９：レール、１０：冷却水出口、
１１：冷却水入口、１２：蓋、１３：搬送管、１４：真
空排気管、１５：成長室、１６：サセプタ、１７：ウエ
ハ、１８：ヒータ、１９：ヒータ端子、２０：真空排気
系、２１：回転機構、２２：冷却水流路、２３：枝管、
２４：冷却水導管、２５：ベロー、２６：駆動装置FIG. 1 is a sectional view of a metal-organic vapor phase epitaxy apparatus which is one embodiment of the present invention. 1: Transport device, 2: Vacuum preparation chamber, 3: Vacuum exhaust system, 4:
Raw material gas supply system, 5: door, 6: gate valve, 7: holder, 8: cassette, 9: rail, 10: cooling water outlet,
11: cooling water inlet, 12: lid, 13: transfer pipe, 14: vacuum exhaust pipe, 15: growth chamber, 16: susceptor, 17: wafer, 18: heater, 19: heater terminal, 20: vacuum exhaust system, 21 : Rotating mechanism, 22: cooling water flow path, 23: branch pipe,
24: cooling water conduit, 25: bellows, 26: drive device
Claims (3)
る回転式サセプタを配置し、該ウエハ上にエピタキシャ
ル成長を行う有機金属気相成長装置において、ウエハを
予め真空保持する真空準備室を設け、ゲートバルブを有
する搬送管によって真空準備室と成長室を接続し、該搬
送管を介して成長室のサセプタにウエハを搬送する搬送
機構を設け、成長室の搬送用開口部に開閉可能な蓋を設
け、該蓋の内面は成長室内壁と同一材料で構成し、か
つ、蓋の装着時には成長室内壁と連続する滑らかな面を
有し、上記搬送管には蓋を移動して収納するための枝管
を付設し、枝管若しくは搬送管を真空排気系と接続する
ことを特徴とする有機金属気相成長装置。1. A metal-organic vapor phase epitaxy apparatus in which a rotary susceptor for mounting a semiconductor wafer is arranged in the center of a vertical growth chamber and epitaxial growth is performed on the wafer, and a vacuum preparation chamber for preliminarily holding the wafer in vacuum is provided. , A vacuum preparation chamber and a growth chamber are connected by a transfer pipe having a gate valve, a transfer mechanism for transferring a wafer to the susceptor of the growth chamber is provided through the transfer pipe, and an opening / closing lid is provided at a transfer opening of the growth chamber. The inner surface of the lid is made of the same material as the inner wall of the growth chamber, and has a smooth surface that is continuous with the inner wall of the growth chamber when the lid is attached. A metal-organic vapor phase epitaxy apparatus characterized in that a branch pipe is attached and the branch pipe or the transfer pipe is connected to a vacuum exhaust system.
蓋を支持する棒状体をベローの底部に固定して、ベロー
底部を後退することにより蓋を枝管内に収納可能とした
ことを特徴とする特許請求の範囲第一項記載の有機金属
気相成長装置。2. A branch pipe is sealed with a bellows having one end closed,
The metal-organic vapor phase epitaxy according to claim 1, characterized in that the rod-shaped body supporting the lid is fixed to the bottom portion of the bellows, and the lid can be housed in the branch pipe by retracting the bellows bottom portion. apparatus.
とを特徴とする特許請求の範囲第一項又は第二項記載の
有機金属気相成長装置。3. The metal-organic vapor phase epitaxy apparatus according to claim 1 or 2, further comprising means for cooling the growth chamber and the lid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29397687A JPH0628240B2 (en) | 1987-11-24 | 1987-11-24 | Metalorganic vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29397687A JPH0628240B2 (en) | 1987-11-24 | 1987-11-24 | Metalorganic vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01136329A JPH01136329A (en) | 1989-05-29 |
| JPH0628240B2 true JPH0628240B2 (en) | 1994-04-13 |
Family
ID=17801630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29397687A Expired - Lifetime JPH0628240B2 (en) | 1987-11-24 | 1987-11-24 | Metalorganic vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0628240B2 (en) |
-
1987
- 1987-11-24 JP JP29397687A patent/JPH0628240B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01136329A (en) | 1989-05-29 |
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