JPH0628245B2 - Metalorganic vapor phase growth equipment - Google Patents
Metalorganic vapor phase growth equipmentInfo
- Publication number
- JPH0628245B2 JPH0628245B2 JP3856088A JP3856088A JPH0628245B2 JP H0628245 B2 JPH0628245 B2 JP H0628245B2 JP 3856088 A JP3856088 A JP 3856088A JP 3856088 A JP3856088 A JP 3856088A JP H0628245 B2 JPH0628245 B2 JP H0628245B2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- wafer
- growth
- chamber
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001947 vapour-phase growth Methods 0.000 title description 6
- 230000007246 mechanism Effects 0.000 claims description 19
- 238000002360 preparation method Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は有機金属気相成長法(ＭＯＶＰＥ法)を実施する
ための縦型気相成長装置に関する。TECHNICAL FIELD The present invention relates to a vertical vapor phase growth apparatus for carrying out a metal organic chemical vapor deposition method (MOVPE method).
（従来の技術） 半導体装置の製造には、半導体基板上に半導体単結晶を
エピタキシャル成長させる方法が広く用いられている。
このエピタキシャル成長法のなかで、有機金属気相成長
法は、制御性がよく大量生産にも向いているところか
ら、半導体産業の中で重要な地位を占めつつある。この
方法はトリメチルガリウム（Ｇａ(ＣＨ3)3）やトリメチ
ルアルミニウム(Ａｌ(ＣＨ3)3)等の有機金属ガスとアル
シン(ＡｓＨ3)やホスフイン(ＰＨ3)を原料として、それ
を熱分解させてエピタキシャル成長させる方法である。
この方法により製造されるエピタキシャル層の特性は、
成長装置内の雰囲気に強く依存する。即ち、アルミニウ
ムやアンチモン等の酸化し易い成分を含む半導体の製造
は、酸素や水分が僅か残留しても結晶の特性を著しく劣
化する。そこで、成長室内に酸素や水分の侵入を防ぐた
めに成長室を石英製からステンレス等の金属製に変更
し、配管継手部を溶接で接続するなど気密性を高める方
策がとられている。この金属製の成長室は強度も大きく
安全面からも好ましいものである。また、真空準備室を
設けて酸素、水分等の不純物を除いた後、ウエハを成長
室に移したりすることが行われてきた。(Prior Art) A method of epitaxially growing a semiconductor single crystal on a semiconductor substrate is widely used for manufacturing a semiconductor device.
Among these epitaxial growth methods, the metal organic chemical vapor deposition method is occupying an important position in the semiconductor industry because it has good controllability and is suitable for mass production. In this method, organic metal gas such as trimethylgallium (Ga (CH 3 ) 3 ) or trimethylaluminum (Al (CH 3 ) 3 ) and arsine (AsH 3 ) or phosphine (PH 3 ) are used as raw materials and thermally decomposed. Is a method of epitaxial growth.
The characteristics of the epitaxial layer produced by this method are
It strongly depends on the atmosphere inside the growth apparatus. That is, in the production of a semiconductor containing a component such as aluminum or antimony which is easily oxidized, the characteristics of the crystal are significantly deteriorated even if a small amount of oxygen or water remains. Therefore, in order to prevent oxygen and moisture from entering the growth chamber, measures such as changing the growth chamber from quartz to a metal such as stainless steel and connecting pipe joints by welding have been taken. This metal growth chamber has high strength and is preferable from the viewpoint of safety. In addition, a vacuum preparation chamber is provided to remove impurities such as oxygen and water, and then the wafer is transferred to a growth chamber.
（発明が解決しようとする課題） この種の装置において、真空準備室から成長室にウエハ
を搬送し、サセプタ上にウエハをセットするためには、
搬送位置にウエハホルダーが位置するようにサセプタの
回転を止める必要がある。(Problems to be Solved by the Invention) In this type of apparatus, in order to transfer a wafer from the vacuum preparation chamber to the growth chamber and set the wafer on the susceptor,
It is necessary to stop the rotation of the susceptor so that the wafer holder is located at the transfer position.
本発明は、上記課題を解決し、ウエハをサセプタに確実
にセットできるように、ウエハの搬送機構に関連付けて
サセプタの回転を停止できるようにした有機金属気相成
長装置を提供しようとするものである。The present invention is intended to solve the above problems and to provide an organometallic vapor phase epitaxy apparatus capable of stopping the rotation of a susceptor in association with a wafer transfer mechanism so that a wafer can be reliably set on a susceptor. is there.
（課題を解決するための手段） 本発明は、真空準備室と回転式サセプタを備えた縦型成
長室とを搬送管で接続し、成長室内に収容された半導体
ウエハ上にエピタキシャル成長を行う有機金属気相成長
装置において、上記真空準備室にウエハホルダーを収容
するカセットを設け、ウエハを装着したホルダーを該カ
セットから上記サセプタに搬送する搬送機構を設け、円
盤状カムを上記サセプタの回転軸に固定し、該搬送機構
によりウエハホルダーを上記サセプタに装着するための
サセプタの停止位置に対応した切り込み部を上記円盤状
カムに設け、上記円盤状カムの周面に沿ってその先端を
当接させ、かつ円盤状カムの中心に向かって押圧される
ロッドを設けたことを特徴とするサセプタの停止位置決
め機構を備えた有機金属気相成長装置である。なお、ロ
ッドの先端には車輪を設けることにより、位置設定を円
滑に行うようにすることも可能である。(Means for Solving the Problem) The present invention relates to an organic metal for performing epitaxial growth on a semiconductor wafer housed in a growth chamber by connecting a vacuum preparation chamber and a vertical growth chamber equipped with a rotary susceptor with a carrier pipe. In the vapor phase growth apparatus, a cassette for accommodating a wafer holder is provided in the vacuum preparation chamber, a transfer mechanism is provided for transferring the holder with the wafer mounted thereto from the cassette to the susceptor, and a disk-shaped cam is fixed to the rotation shaft of the susceptor. Then, a notch corresponding to the stop position of the susceptor for mounting the wafer holder on the susceptor by the transfer mechanism is provided in the disc-shaped cam, and the tip thereof is abutted along the peripheral surface of the disc-shaped cam, A metal-organic vapor phase epitaxy apparatus having a susceptor stop-positioning mechanism, characterized in that a rod that is pressed toward the center of the disk-shaped cam is provided. It It is also possible to smoothly set the position by providing a wheel at the tip of the rod.
（作用） 第１図は、本発明の１具体例である有機金属気相成長装
置の正面断面図である。この装置は、真空準備室２、成
長室１０及び搬送機構１を装置の基本構成とするもの
で、本発明の特徴は、搬送機構１によりウエハ６を成長
室１０内のサセプタ１３に確実にセット可能とするた
め、サセプタ１３を搬送機構１の位置と関連付けて停止
できるようにしたことにある。(Operation) FIG. 1 is a front sectional view of a metal-organic vapor phase epitaxy apparatus which is one example of the present invention. This apparatus has a vacuum preparation chamber 2, a growth chamber 10, and a transfer mechanism 1 as a basic configuration of the apparatus. The feature of the present invention is that the transfer mechanism 1 reliably sets a wafer 6 on a susceptor 13 in the growth chamber 10. In order to make it possible, the susceptor 13 can be stopped in association with the position of the transport mechanism 1.
即ち、真空準備室２には、側面の扉５を開けると、ウエ
ハホルダー用のカセット８を誘導するためのレール９が
中に向かって敷かれており、真空準備室２の上方には搬
送機構１が設けられている。この搬送機構１は、カセッ
ト８からウエハホルダー７を取り出し、搬送管１１を介
して成長室１０のサセプタ１３上にセットする機能を備
えている。搬送管１１には、ゲートバルブ１２が設けら
れており、真空準備室２を大気に開放したり、所定の真
空を得るまで、成長室１０と遮断するために用いられ
る。なお、真空準備室２には独自の真空排気系３と接続
されている。That is, in the vacuum preparation chamber 2, a rail 9 for guiding the cassette 8 for the wafer holder is laid inward when the side door 5 is opened, and the transfer mechanism is provided above the vacuum preparation chamber 2. 1 is provided. The transfer mechanism 1 has a function of taking out the wafer holder 7 from the cassette 8 and setting it on the susceptor 13 of the growth chamber 10 via the transfer tube 11. The transfer pipe 11 is provided with a gate valve 12, which is used to shut off the vacuum preparation chamber 2 from the growth chamber 10 until it is opened to the atmosphere or a predetermined vacuum is obtained. The vacuum preparation chamber 2 is connected to its own vacuum exhaust system 3.
成長室１０には、サセプタ１３がその中央に置かれてお
り、回転機構１５と回転軸１４により回転することがで
きる。サセプタ１３の内側には加熱用ヒータ１９が設け
られており、成長室１０の側壁に設けた端子２０に接続
している。また、成長室１０の周囲には冷却水流路１６
が設けられており、冷却水は入口１７から導入して出口
１８へ排出する。成長室１０は真空排気系２１と原料ガ
ス供給系４と接続されている。A susceptor 13 is placed in the center of the growth chamber 10 and can be rotated by a rotating mechanism 15 and a rotating shaft 14. A heating heater 19 is provided inside the susceptor 13 and is connected to a terminal 20 provided on the side wall of the growth chamber 10. In addition, a cooling water flow path 16 is provided around the growth chamber 10.
Is provided, and the cooling water is introduced from the inlet 17 and discharged to the outlet 18. The growth chamber 10 is connected to the vacuum exhaust system 21 and the source gas supply system 4.
サセプタ１３の位置決め停止手段は回転軸１４に固定し
た円盤状カム２２とロッド２３の組み合わせよりなる。
第２図は該手段の平面図である。図のサセプタ１０が４
つのウエハホルダー７を保持するものであるから、該カ
ム２２の切り込み部も４カ所有する。成長室１０の側壁
に設けた直線導入機構２４に摺動可能に支持されたロッ
ド２３は該カム２２の外周に当接し、上記の切り込み部
に入るとサセプタ１３の回転が停止させられる。その
際、ロッドの当接を円滑にするために、ロッド先端に車
輪を設けることが好ましい。The positioning stopping means of the susceptor 13 is a combination of a disk-shaped cam 22 fixed to the rotating shaft 14 and a rod 23.
FIG. 2 is a plan view of the means. Four susceptors 10
Since one wafer holder 7 is held, the cam 22 also has four notches. The rod 23 slidably supported by the linear introduction mechanism 24 provided on the side wall of the growth chamber 10 abuts on the outer periphery of the cam 22, and the rotation of the susceptor 13 is stopped when the rod 23 enters the cut portion. At that time, in order to make the contact of the rod smooth, it is preferable to provide a wheel at the tip of the rod.
次に、半導体ウエハ上に気相成長させる手順を説明す
る。まず、エピタキシャル成長用半導体ウエハ６はホル
ダ７にセットされ、該ホルダ７はカセット８に納められ
る。次いで、扉５を開けて該カセット８をレール９に沿
って真空準備室２に挿入する。扉５を閉じた後、上記準
備室２は真空排気系３と接続して排気される。一方、成
長室１０には、別の真空排気系２１により真空に保持さ
れている。上記準備室２の真空度が成長室１０と同じに
なったことを確認してから、搬送管１１のゲートバルブ
１２を開け、ウエハ６をホルダ７とともに搬送装置１に
よってカセット８から取り出し、成長室１０内のサセプ
タ１３に装着する。このときに、サセプタ１３のウエハ
ホルダー７の位置は、搬送機構１の真下に位置すること
が大切であり、サセプタ１３へのウエハ６のセットを確
実なものとする。この位置決めは回転軸１４に固定した
円盤状カム２２の切り込み部にロッド２３が挿入するこ
とにより決定される。第１図のサセプタ１３はウエハホ
ルダー７を４つセットすることが可能であり、従って、
第２図のように円盤状カム２２には４つの切り込みを設
けることにより、各々のウエハホルダーの位置でサセプ
タを順次停止することにより、ウエハをサセプタ上にセ
ットする。Next, a procedure for vapor phase growth on a semiconductor wafer will be described. First, the semiconductor wafer 6 for epitaxial growth is set in the holder 7, and the holder 7 is placed in the cassette 8. Next, the door 5 is opened and the cassette 8 is inserted into the vacuum preparation chamber 2 along the rail 9. After closing the door 5, the preparation chamber 2 is connected to the vacuum exhaust system 3 and exhausted. On the other hand, the growth chamber 10 is kept vacuum by another vacuum exhaust system 21. After confirming that the degree of vacuum in the preparation chamber 2 is the same as that in the growth chamber 10, the gate valve 12 of the transfer tube 11 is opened, and the wafer 6 is taken out of the cassette 8 by the transfer device 1 together with the holder 7 in the growth chamber 10. It is attached to the susceptor 13 in the unit 10. At this time, it is important that the position of the wafer holder 7 of the susceptor 13 is located directly below the transfer mechanism 1, so that the wafer 6 can be reliably set on the susceptor 13. This positioning is determined by inserting the rod 23 into the cut portion of the disk-shaped cam 22 fixed to the rotating shaft 14. The susceptor 13 of FIG. 1 can set four wafer holders 7, and therefore,
As shown in FIG. 2, the disc-shaped cam 22 is provided with four notches, and the susceptor is sequentially stopped at the position of each wafer holder to set the wafer on the susceptor.
その後、ゲートバルブ１２を閉じ、成長室１０の流路１
６に冷却水を流して、回転機構１５によりサセプタ１３
を回転させながら、ヒータ１９でウエハ６を成長温度に
加熱し、次いで、成長室１０の頂部から原料ガスを供給
することにより、ウエハ上にエピタキシャル成長を行
う。所定の成長を終了した時に、成長室１０の温度を下
げ、真空排気した後、ゲートバルブ１２を開けて搬送装
置１によりウエハ６をホルダ７とともにサセプタ１３か
ら取り出して真空準備室２のカセット８に回収し、ゲー
トバルブ１２を閉じてから、大気圧にリークして扉５を
開けてウエハ６を外部に取り出す。Then, the gate valve 12 is closed and the flow path 1 of the growth chamber 10 is closed.
Cooling water is caused to flow into the susceptor 13 by the rotating mechanism 15.
While rotating, the wafer 6 is heated to the growth temperature by the heater 19, and then a source gas is supplied from the top of the growth chamber 10 to perform epitaxial growth on the wafer. When the predetermined growth is completed, the temperature of the growth chamber 10 is lowered and the chamber is evacuated to vacuum. Then, the gate valve 12 is opened and the wafer 6 is taken out from the susceptor 13 together with the holder 7 by the transfer device 1 into the cassette 8 in the vacuum preparation chamber 2. After collecting, closing the gate valve 12, leaking to atmospheric pressure, opening the door 5, and taking out the wafer 6 to the outside.
このように、簡単なカム機構を付設することにより、サ
セプタ１３を所定位置に正確に停止することができるの
で、搬送機構１によるサセプタ１３へのセットが確実に
なり、装置の操作性が向上した。As described above, by attaching the simple cam mechanism, the susceptor 13 can be accurately stopped at a predetermined position, so that the transfer mechanism 1 reliably sets the susceptor 13 and the operability of the apparatus is improved. .
（実施例） 第１図の装置を用いて、ＧaＡsウエハにＧaＡs層及びＡ
ｌ0.3Ｇａ0.7Ａｓ層をエピタキシャル成長により形成し
てＨＥＭＴ構造を作成した。３インチのＧaＡsウエハを
ホルダにセットして真空準備室に送り、該室内を10-5〜
10-6Torrに真空排気した。一方、成長室は10-8Torr台ま
で真空排気されており、ゲートバルブを開けて、ウエハ
をホルダとともに真空準備室から成長室に移し、サセプ
タにセットした。その後、成長室の冷却水流路に冷却水
を流し、サセプタを回転速度15rpmで回転させながらヒ
ータに通電してウエハを加熱し、ＧaＡsウエハのＡs抜
けを防ぐため500 ℃でアルシンを導入し、次いでウエハ
の温度を成長温度である680℃に調整し、有機金属ガス
を成長室の頂部から流して気相成長を行った。原料ガス
組成は、ＧaＡs層の形成時に、０℃に保持したトリメチ
ルガリウムを水素でバブリングしたガスを15.0cc／分、
水素ベース10％アルシンを1000cc／分を100分間流し、
また、Ａｌ0.3Ｇａ0.7Ａs層の形成時には、20℃に保持
したトリメチルアルミニウムを水素でバブリングしたガ
スを20cc／分、０℃に保持したトリメチルガリウムを水
素でバブリングしたガスを15.0cc／分、水素ベース10％
アルシンを1000cc／分を90分間流した。まず、上記の成
長を圧力10Torrの条件で交互に５回繰り返して慣らし運
転を行った。その後、上記と同様な条件でエピタキシャ
ル成長を行い、ＨＥＭＴ構造を作成した。得られたウエ
ハは、液体窒素温度におけるシートキャリア濃度が７×
1011cm-2、移動度が85,000cm2／Ｖsecであり、ウエハ面
内のバラツキは約５％以下と良好な結果を得た。(Example) Using the apparatus of FIG. 1, a GaAs layer and a GaAs layer were formed on a GaAs wafer.
creating the HEMT structure l 0.3 Ga 0.7 As layer is formed by epitaxial growth. A 3-inch GaAs wafer is set in the holder and sent to the vacuum preparation chamber, where the chamber is heated to 10 -5 ~
It was evacuated to 10 -6 Torr. On the other hand, the growth chamber was evacuated to a level of 10 −8 Torr, the gate valve was opened, the wafer together with the holder was transferred from the vacuum preparation chamber to the growth chamber, and set on the susceptor. After that, cooling water was made to flow in the cooling water flow path of the growth chamber, the heater was energized to heat the wafer while rotating the susceptor at a rotation speed of 15 rpm, and arsine was introduced at 500 ° C. to prevent the As loss of the GaAs wafer. The temperature of the wafer was adjusted to the growth temperature of 680 ° C., and the organometallic gas was caused to flow from the top of the growth chamber to carry out vapor phase growth. The composition of the source gas was 15.0 cc / min for a gas obtained by bubbling trimethylgallium kept at 0 ° C. with hydrogen when the GaAs layer was formed,
Flow hydrogen-based 10% arsine at 1000cc / min for 100 minutes,
Further, when forming the Al 0.3 Ga 0.7 As layer, a gas obtained by bubbling trimethylaluminum kept at 20 ° C. with hydrogen was 20 cc / min, and a gas obtained by bubbling trimethylgallium kept at 0 ° C. with hydrogen was 15.0 cc / min. 10% base
Arsine was run at 1000 cc / min for 90 minutes. First, the above-mentioned growth was alternately repeated 5 times under the condition of a pressure of 10 Torr to perform a break-in operation. After that, epitaxial growth was performed under the same conditions as described above to form a HEMT structure. The obtained wafer has a sheet carrier concentration of 7 × at liquid nitrogen temperature.
The result was 10 11 cm -2 , the mobility was 85,000 cm 2 / Vsec, and the variation within the wafer surface was about 5% or less, which is a good result.
（発明の効果） 本発明は、上記構成を採用することにより、簡単な位置
決め停止手段を付設し、搬送機構によるサセプタへのウ
エハホルダーのセットを確実なものとなし、気相成長装
置の操作性を向上させた。(Advantages of the Invention) According to the present invention, by adopting the above-mentioned configuration, a simple positioning stopping means is additionally provided, and the wafer holder is reliably set on the susceptor by the transfer mechanism, and the operability of the vapor phase growth apparatus is improved. Improved.
第１図は本発明の一つの具体例である有機金属気相成長
装置の断面図であり、第２図は第１図のサセプタ位置決
め停止手段を説明するための平断面図である。 １：搬送装置、２：真空準備室、３：真空排気系、４：
原料ガス供給系、５：扉、６：ウエハ、７：ホルダー、
８：カセット、９：レール、１０：成長室、１１：搬送
管、１３：サセプタ、１４：回転軸、１９：ヒータ、２
０：ヒータ端子、２１：真空排気系、２２：円盤状カ
ム、２３：ロッド、２４：直線導入機構FIG. 1 is a sectional view of a metal-organic vapor phase epitaxy apparatus which is one embodiment of the present invention, and FIG. 2 is a plane sectional view for explaining the susceptor positioning stopping means of FIG. 1: Transport device, 2: Vacuum preparation chamber, 3: Vacuum exhaust system, 4:
Raw material gas supply system, 5: door, 6: wafer, 7: holder,
8: cassette, 9: rail, 10: growth chamber, 11: transfer tube, 13: susceptor, 14: rotating shaft, 19: heater, 2
0: heater terminal, 21: vacuum exhaust system, 22: disk-shaped cam, 23: rod, 24: straight line introduction mechanism
Claims (1)
成長室とを搬送管で接続し、成長室内に収容された半導
体ウエハ上にエピタキシャル成長を行う有機金属気相成
長装置において、上記真空準備室にウエハホルダーを収
容するカセットを設け、ウエハを装着したホルダーを該
カセットから上記サセプタに搬送する搬送機構を設け、
円盤状カムを上記サセプタの回転軸に固定し、該搬送機
構によりウエハホルダーを上記サセプタに装着するため
のサセプタの停止位置に対応した切り込み部を上記円盤
状カムに設け、上記円盤状カムの周面に沿ってその先端
を当接させ、かつ円盤状カムの中心に向かって押圧され
るロッドを設けたことを特徴とするサセプタの停止位置
決め機構を備えた有機金属気相成長装置。1. A metal-organic vapor phase epitaxy apparatus for performing epitaxial growth on a semiconductor wafer housed in a growth chamber, wherein a vacuum preparation chamber and a vertical growth chamber equipped with a rotary susceptor are connected by a transfer pipe. A cassette for accommodating the wafer holder is provided in the preparation chamber, and a transfer mechanism for transferring the holder having the wafer mounted thereto from the cassette to the susceptor is provided.
The disc-shaped cam is fixed to the rotation shaft of the susceptor, and a notch corresponding to the stop position of the susceptor for mounting the wafer holder on the susceptor by the transfer mechanism is provided on the disc-shaped cam. A metal-organic vapor phase epitaxy apparatus having a susceptor stop-positioning mechanism, characterized in that a rod is provided that abuts its tip along a surface and is pressed toward the center of a disk-shaped cam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3856088A JPH0628245B2 (en) | 1988-02-23 | 1988-02-23 | Metalorganic vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3856088A JPH0628245B2 (en) | 1988-02-23 | 1988-02-23 | Metalorganic vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01214114A JPH01214114A (en) | 1989-08-28 |
| JPH0628245B2 true JPH0628245B2 (en) | 1994-04-13 |
Family
ID=12528682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3856088A Expired - Fee Related JPH0628245B2 (en) | 1988-02-23 | 1988-02-23 | Metalorganic vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0628245B2 (en) |
-
1988
- 1988-02-23 JP JP3856088A patent/JPH0628245B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01214114A (en) | 1989-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0628245B2 (en) | Metalorganic vapor phase growth equipment | |
| JPH0654764B2 (en) | Method for forming semi-insulating gallium arsenide | |
| JP2528912B2 (en) | Semiconductor growth equipment | |
| JPS62214616A (en) | Organo metallic vapor phase epitaxy equipment | |
| JPH0628240B2 (en) | Metalorganic vapor phase growth equipment | |
| JPS63166215A (en) | Semiconductor vapor growth system | |
| JPH04202091A (en) | Vapor growth device of compound semiconductor | |
| JPH01145806A (en) | Organic metal vapor growth apparatus | |
| JP2805865B2 (en) | Vapor phase growth method of phosphorus compound semiconductor crystal | |
| JPH0628241B2 (en) | Metalorganic vapor phase growth equipment | |
| JP3574494B2 (en) | Nitride compound semiconductor crystal growth method and growth apparatus | |
| JPH0243720A (en) | Molecular beam epitaxial growth method | |
| JPH0235814Y2 (en) | ||
| JPH0628243B2 (en) | Metalorganic vapor phase growth equipment | |
| JPS639742B2 (en) | ||
| JP2753832B2 (en) | III-V Vapor Phase Growth of Group V Compound Semiconductor | |
| JPH0715887B2 (en) | Metalorganic vapor phase growth equipment | |
| JPS63299115A (en) | Vapor phase growth equipment | |
| JPS63248797A (en) | Device for vapor phase epitaxy | |
| JPS61242994A (en) | Vertical unit for vapor growth | |
| JPS62189727A (en) | Apparatus for thermal decomposition vapor growth of organic metal | |
| JPS61284915A (en) | Thin film vapor growth apparatus | |
| JPS62297295A (en) | Vapor growth by thermal decomposition of organometallic compounds and apparatus therefor | |
| JPH01212723A (en) | Method for refinning of material for source of molecular beam and molecular beam epitaxial growth method | |
| JPS63190327A (en) | Vapor growth device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |