JPH0628241B2 - Metalorganic vapor phase growth equipment - Google Patents
Metalorganic vapor phase growth equipmentInfo
- Publication number
- JPH0628241B2 JPH0628241B2 JP29397787A JP29397787A JPH0628241B2 JP H0628241 B2 JPH0628241 B2 JP H0628241B2 JP 29397787 A JP29397787 A JP 29397787A JP 29397787 A JP29397787 A JP 29397787A JP H0628241 B2 JPH0628241 B2 JP H0628241B2
- Authority
- JP
- Japan
- Prior art keywords
- lid
- growth chamber
- vapor phase
- growth
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001947 vapour-phase growth Methods 0.000 title description 6
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims 1
- 239000000498 cooling water Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は有機金属気相成長法（Ｍｅｔａｌ Ｏｒｇａｎ
ｉｃ Ｖａｐｏｒ Ｐｈａｓｅ Ｅｐｉｔａｘｙ，以
下、ＭＯＶＰＥ法と略記する）を実施するための縦型気
相成長装置に関し、特に、金属製の成長室内の半導体ウ
エハを外部から観察する手段を有する気相成長装置に関
する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention is directed to metalorganic vapor phase epitaxy (Metal Organ).
ic vapor phase epitaxy (hereinafter abbreviated as MOVPE method)), and more particularly to a vapor phase growth apparatus having means for externally observing a semiconductor wafer in a metal growth chamber.
（従来の技術） 半導体装置の製造には、半導体基板上に半導体単結晶を
エピタキシャル成長させる方法が広く用いられている。
このエピタキシャル成長法のなかで、有機金属気相成長
法は、制御性がよく大量生産にも向いているところか
ら、半導体産業の中で重要な地位を占めつつある。この
方法はトリメチルガリウム（Ｇａ（ＣＨ３）３）やトリ
メチルアルミニウム（Ａｌ（ＣＨ３）３）等の有機金属
ガスとアルシン（ＡｓＨ３）やホスフイン（ＰＨ３）を
原料として、それを熱分解させてエピタキシャル成長さ
せる方法である。この方法により製造されるエピタキシ
ャル層の特性は、成長装置内の雰囲気に強く依存する。
即ち、アルミニウムやアンチモン等の酸化し易い成分を
含む半導体の製造は、酸素や水分が僅か残留しても結晶
の特性を著しく劣化する。そこで、成長室内に酸素や水
分の侵入を防ぐために成長室を石英製からステンレス等
の金属製に変更し、配管継手部を溶接で接続するなど気
密性を高める方策がとられている。この金属製の成長室
は強度も大きく安全面からも好ましいものである。(Prior Art) A method of epitaxially growing a semiconductor single crystal on a semiconductor substrate is widely used for manufacturing a semiconductor device.
Among these epitaxial growth methods, the metal organic chemical vapor deposition method is occupying an important position in the semiconductor industry because it has good controllability and is suitable for mass production. In this method, organic metal gas such as trimethylgallium (Ga (CH 3 ) 3 ) or trimethylaluminum (Al (CH 3 ) 3 ) and arsine (AsH 3 ) or phosphine (PH 3 ) are used as raw materials and thermally decomposed. Is a method of epitaxial growth. The characteristics of the epitaxial layer produced by this method strongly depend on the atmosphere in the growth apparatus.
That is, in the production of a semiconductor containing a component such as aluminum or antimony which is easily oxidized, the characteristics of the crystal are significantly deteriorated even if a small amount of oxygen or water remains. Therefore, in order to prevent oxygen and moisture from entering the growth chamber, measures such as changing the growth chamber from quartz to a metal such as stainless steel and connecting pipe joints by welding have been taken. This metal growth chamber has high strength and is preferable from the viewpoint of safety.
（発明が解決しようとする問題点） 一方、有機金属気相成長法を実施するときには、成長用
基板の装着の確認や放射温度計による外部からウエハ温
度の読み取りなど、成長室内の観察は欠かすことができ
ない。しかし、上記の金属製の成長室を採用するときに
は、石英製の場合のように外部から直接観察することが
できないので、観察窓を付設する必要がある。この窓の
付設についても気密性の確保が要求される。例えば、成
長室側壁の開口部に短管を溶接で結合し、その端部に窓
材をフランジで取り付けることにより、気密性を確保す
ることもできるが、短管内がデッドスペースとなり、成
長室内のガス流を乱す原因となっている。また、窓自身
が反応生成物の付着等により曇って見えなくなるという
問題もあるために、金属製の成長室の採用を困難にして
いる。(Problems to be Solved by the Invention) On the other hand, when carrying out the metal organic chemical vapor deposition method, it is essential to observe the inside of the growth chamber such as confirming the mounting of the growth substrate and reading the wafer temperature from the outside with a radiation thermometer. I can't. However, when the above-mentioned growth chamber made of metal is adopted, it is not possible to directly observe from the outside as in the case of quartz, so it is necessary to provide an observation window. It is also required to secure airtightness when installing this window. For example, it is possible to secure airtightness by joining a short tube to the opening of the side wall of the growth chamber by welding and attaching a window material to the end of the short tube with a flange, but the inside of the short tube becomes a dead space, and It causes the gas flow to be disturbed. Further, there is a problem that the window itself becomes cloudy due to adhesion of reaction products and becomes invisible, which makes it difficult to adopt a growth chamber made of metal.
本発明は、上記の問題点を解消し、明確な視野を確保で
きる観察窓を付設し、成長室内の安定しガス流を保証す
る金属製の成長室を有する有機金属気相成長装置を提供
しようとするものである。The present invention solves the above problems and provides an organometallic vapor phase epitaxy apparatus having a growth chamber made of metal, which is provided with an observation window capable of ensuring a clear field of view and ensures a stable gas flow in the growth chamber. It is what
（問題点を解決するための手段） 本発明は、縦型成長室の中央に半導体ウエハを装着する
回転式サセプタを配置し、該ウエハ上にエピタキシャル
成長を行う有機金属気相成長装置において、金属製の成
長室を用い、該成長室側壁に対して一端を窓材で閉じた
観測用短管を接続し、側壁の接続開口部には開閉可能な
蓋を設け、該蓋の内面を成長室内壁と同一材料で構成
し、かつ、蓋の装着時には成長室内壁と連続する円滑な
面を形成することのできる内面形状を有し、蓋の解放時
には蓋を移動させて収納するための枝管を上記短管に付
設し、さらに、短管若しくは枝管を真空排気系に接続し
たことを特徴とする有機金属気相成長装置である。(Means for Solving the Problems) The present invention provides a metal-organic chemical vapor deposition apparatus in which a rotary susceptor for mounting a semiconductor wafer is arranged in the center of a vertical growth chamber and epitaxial growth is performed on the wafer. The short chamber for observation whose one end is closed with a window material is connected to the side wall of the growth chamber, and a lid that can be opened and closed is provided at the connection opening portion of the side wall. It has the inner surface shape that is made of the same material as the above and that can form a smooth surface that is continuous with the inner wall of the growth chamber when the lid is attached, and a branch pipe for moving and storing the lid when opening the lid. The metal-organic vapor phase epitaxy apparatus is characterized in that the short tube is attached to the short tube, and the short tube or the branch tube is connected to a vacuum exhaust system.
（作用） 第一図は、本発明の１具体例である有機金属気相成長装
置の正面断面図である。エピタキシャル成長用半導体ウ
エハ１７はホルダ７にセットされ、該ホルダ７はカセッ
ト８に納められ、扉５を開けて該カセット８はレール９
に沿って真空準備室２に挿入される。扉５を閉じた後、
上記準備室２は真空排気系３と接続して排気される。一
方、ステンレス製の成長室１５は別の真空排気系２０に
より真空に保持されている。上記準備室２及び成長室１
５を接続する導管のゲートバルブ６を開け、ウエハ１７
をホルダ７とともに搬送装置１によってカセット８から
取り出し、成長室１５内のサセプタ１６に装着する。第
一図のサセプタ１６はウエハホルダー７を４つ保持し
て、回転機構２１により回転する。成長室１５の側面に
は観察用のビューポート１３が設けられており、ウエハ
ホルダー７の装着状態の確認や放射温度計によるウエハ
温度の測定などに用いられる。また成長室１５の周囲に
は冷却水流路２７を設け、入口１１から冷却水を導入し
て出口１０から排出する。ウエハ１７の加熱用ヒータ１
８はサセプタ１６の内側に設け、その端子１９を成長室
１５から引き出してある。そして、成長室１５の頂部は
導管を介して原料ガス供給系４と接続している。(Operation) FIG. 1 is a front sectional view of a metal-organic vapor phase epitaxy apparatus which is one specific example of the present invention. The semiconductor wafer 17 for epitaxial growth is set in a holder 7, the holder 7 is placed in a cassette 8, the door 5 is opened, and the cassette 8 is moved to a rail 9.
And is inserted into the vacuum preparation chamber 2. After closing the door 5,
The preparation chamber 2 is connected to the vacuum exhaust system 3 and is exhausted. On the other hand, the growth chamber 15 made of stainless steel is kept in vacuum by another vacuum exhaust system 20. Preparation room 2 and growth room 1
Open the gate valve 6 of the conduit connecting the 5 and the wafer 17
Is taken out from the cassette 8 by the transfer device 1 together with the holder 7 and mounted on the susceptor 16 in the growth chamber 15. The susceptor 16 of FIG. 1 holds four wafer holders 7 and is rotated by the rotating mechanism 21. A view port 13 for observation is provided on the side surface of the growth chamber 15 and is used for checking the mounting state of the wafer holder 7 and measuring the wafer temperature by a radiation thermometer. A cooling water channel 27 is provided around the growth chamber 15, and cooling water is introduced from the inlet 11 and discharged from the outlet 10. Heater 1 for heating wafer 17
8 is provided inside the susceptor 16 and its terminal 19 is pulled out from the growth chamber 15. The top of the growth chamber 15 is connected to the source gas supply system 4 via a conduit.
第二図は、第一図の成長室１５の平面断面図である。成
長室１５の側壁には、ビューポート１３がサセプタ１６
上のウエハ１７に対向する位置に設けられており、成長
室１５の開口部は蓋１２により閉じられている。この蓋
１２は、成長室１５と同じ材料で作られており、その内
面は閉じた状態において成長室１５の滑らかな内壁の一
部を形成するような形状を有する。さらに、蓋１２には
冷却水流路が付設されており、該流路に接続する冷却水
導管２３が上記蓋１２を背面より支持する。この冷却水
導管２３は、ビューポート１３の短管２２に付設する枝
管２４を通って外側に引き出されており、枝管２４に設
けたベロー２５の端部に固定され、駆動装置２６により
前後に移動することができる。従って、第二図に示すよ
うに蓋１２が閉じた状態から、枝管２４内に移動するこ
とにより、ビューポート１３の視野が確保されて成長室
１５内の観察を可能とする。また、ビューポート１３の
短管２２は成長室１５の真空排気系２０と導管１４で接
続されており、成長室１５と同様に真空が保持される。
それ故、蓋１２は格別な気密性を要求されない。FIG. 2 is a plan sectional view of the growth chamber 15 of FIG. On the side wall of the growth chamber 15, the viewport 13 is provided with the susceptor 16
It is provided at a position facing the upper wafer 17, and the opening of the growth chamber 15 is closed by a lid 12. This lid 12 is made of the same material as the growth chamber 15 and its inner surface is shaped so as to form part of the smooth inner wall of the growth chamber 15 in the closed state. Further, the lid 12 is provided with a cooling water channel, and a cooling water conduit 23 connected to the channel supports the lid 12 from the back surface. The cooling water conduit 23 is drawn out to the outside through a branch pipe 24 attached to the short pipe 22 of the view port 13, is fixed to an end of a bellows 25 provided on the branch pipe 24, and is moved forward and backward by a drive device 26. Can be moved to. Therefore, as shown in FIG. 2, the lid 12 is moved from the closed state to the inside of the branch tube 24, so that the field of view of the viewport 13 is secured and the inside of the growth chamber 15 can be observed. The short tube 22 of the viewport 13 is connected to the vacuum exhaust system 20 of the growth chamber 15 by the conduit 14, and the vacuum is maintained as in the growth chamber 15.
Therefore, the lid 12 does not need to be particularly airtight.
このような蓋の採用により、成長室内の観察時のみ該蓋
を開放するが、成長時には短管のデットスペースを排除
し、滑らかな成長室内面を確保し、かつ、成長室を均一
に冷却することができるので、成長室の頂部から流下す
る原料ガス流は乱されることもなく、ウエハ上に均一な
エピタキシャル層を形成することができる。By adopting such a lid, the lid is opened only during observation in the growth chamber, but during growth, the dead space of the short tube is eliminated, a smooth growth chamber surface is secured, and the growth chamber is cooled uniformly. Therefore, the source gas flow flowing down from the top of the growth chamber is not disturbed, and a uniform epitaxial layer can be formed on the wafer.
所定の成長を終了した時に、成長室１５の温度を下げ、
真空排気した後、ゲートバルブ６を開けて搬送装置１に
よりウエハ１７をホルダ７とともにサセプタ１６から取
り出して真空準備室２のカセット８に回収し、ゲートバ
ルブ６を閉じてから、大気圧にリークして扉５を開けて
ウエハ１７を外部に取り出す。When the predetermined growth is completed, the temperature of the growth chamber 15 is lowered,
After vacuum evacuation, the gate valve 6 is opened, the wafer 17 is taken out from the susceptor 16 together with the holder 7 by the transfer device 1 and collected in the cassette 8 in the vacuum preparation chamber 2, and after the gate valve 6 is closed, it leaks to the atmospheric pressure. Door 5 is opened to take out the wafer 17 to the outside.
（実施例） ステンレス製の成長室を採用した第一図の気相成長装置
を用いて、ＧａＡｓウエハにＧａＡｓ層及びＡｌ0.3Ｇ
ａ0.7Ａｓ層をエピタキシャル成長により形成してＨＥ
ＭＴ構造を作成した。３インチのＧａＡｓウエハをホル
ダにセットして真空準備室に送り、該室内を１０-5〜１
０-6Ｔｏｒｒに真空排気した。一方、成長室は１０-8Ｔ
ｏｒｒ台まで真空排気されており、ゲートバルブを開け
てウエハをホルダとともに真空準備室から成長室に移
し、サセプタにセットした。この間、ビューポートの蓋
を開けて、ウエハのセットの状態を確認した。その後、
成長室の冷却水流路に冷却水を流し、ヒータに通電して
ウエハを加熱して、ウエハの温度が成長温度である６５
０℃であることを放射温度計を用いて確認した。それか
ら、ビューポートの蓋をして、サセプタを回転速度１７
ｒｐｍで回転させながら原料ガスを成長室の頂部から流
して気相成長を行った。原料ガス組成は、ＧａＡｓ層の
形成時に、０℃に保持したトリメチルガリウムをバブリ
ングした水素を１５ｃｃ／分，水素ベースで１０％アル
シンを１０００ｃｃ／分を１００分間流し、また、Ａｌ
0.3Ｇａ0.7Ａｓ層の形成時には、２０℃に保持したトリ
メチルアルミニウムをバブリングした水素を２０ｃｃ／
分，０℃に保持したトリメチルガリウムをバブリングし
た水素を１５ｃｃ／分，水素ベース１０％アルシンを１
０００ｃｃ／分を９０分間流し、成長圧力１５Ｔｏｒ
ｒ、成長速度１．８μｍ／ｈｒで育成した。まず、上記
のＧａＡｓ層とＡｌＧａＡｓ層の成長を交互に５回繰り
返して慣らし運転を行った。その後、上記と同様な条件
でエピタキシャル成長を行い、ＨＥＭＴ構造を作成し
た。(Example) Using the vapor phase growth apparatus of FIG. 1 which adopted a growth chamber made of stainless steel, a GaAs layer and Al 0.3 G were formed on a GaAs wafer.
a 0.7 As layer is formed by epitaxial growth and HE
The MT structure was created. A 3 inch GaAs wafer is set in a holder and sent to a vacuum preparation chamber, and the chamber is set to 10 -5 to 1
It was evacuated to 0 -6 Torr. On the other hand, the growth chamber is 10 -8 T
The wafer was evacuated to the orr level, the gate valve was opened, the wafer was moved from the vacuum preparation chamber to the growth chamber together with the holder, and the wafer was set on the susceptor. During this time, the viewport lid was opened to check the state of the wafer set. afterwards,
The cooling water is caused to flow through the cooling water flow path of the growth chamber, the heater is energized to heat the wafer, and the temperature of the wafer is the growth temperature.
It was confirmed to be 0 ° C. by using a radiation thermometer. Then, cover the viewport and rotate the susceptor to a rotational speed of 17
The raw material gas was caused to flow from the top of the growth chamber while rotating at rpm to perform vapor phase growth. When forming the GaAs layer, the source gas composition was such that hydrogen bubbling trimethylgallium kept at 0 ° C. was flowed at 15 cc / min, and 10% arsine based on hydrogen was flowed at 1000 cc / min for 100 minutes.
At the time of forming the 0.3 Ga 0.7 As layer, hydrogen bubbling through trimethylaluminum kept at 20 ° C. was added to 20 cc /
Min, 15 cc / min hydrogen bubbling trimethylgallium kept at 0 ° C, 1% hydrogen-based 10% arsine
Flow 000 cc / min for 90 minutes, growth pressure 15 Tor
r was grown at a growth rate of 1.8 μm / hr. First, the above-described growth of the GaAs layer and the AlGaAs layer was alternately repeated 5 times to perform a break-in operation. After that, epitaxial growth was performed under the same conditions as described above to form a HEMT structure.
得られたウエハは、液体窒素温度におけるシートキャリ
ア濃度が７×１０11cm-2、移動度が８３，０００ｃｍ2
／Ｖｓｅｃであり、ウエハ面内のバラツキは約６％以下
と良好な結果を得た。The obtained wafer had a sheet carrier concentration of 7 × 10 11 cm -2 at a liquid nitrogen temperature and a mobility of 83,000 cm 2
/ Vsec, and the variation within the wafer surface was about 6% or less, which is a good result.
その後、８０回上記のエピタキシャル成長を繰り返した
が、結晶特性に大きな変動もなく、その間、ビューポー
トに汚れが全く認められなかった。After that, the above epitaxial growth was repeated 80 times, but there was no large change in the crystal characteristics, and during that time, no stain was observed in the viewport.
（発明の効果） 本発明は、上記構成を採用することにより、観察用ビュ
ーポートを付設した金属製の成長室を用いるときに、鮮
明な観察視野と原料ガスの円滑な流れを保証し、その結
果、均一なエピタキシャル成長が可能となり、気相成長
装置の制御性及び量産性を高めた。(Advantages of the Invention) The present invention, by adopting the above configuration, ensures a clear observation field of view and a smooth flow of raw material gas when a metal growth chamber provided with an observation viewport is used. As a result, uniform epitaxial growth is possible and the controllability and mass productivity of the vapor phase growth apparatus are improved.
第一図は本発明の１具体例である気相成長装置の正面断
面図、第二図は第一図の平面断面図である。 １：搬送装置、２：真空準備室、３：真空排気系、４：
原料ガス供給系、５：扉、６：ゲートバルブ、７：ホル
ダ、８：カセット、９：レール、１０：冷却水出口、１
１：冷却水入口、１２：蓋、１３：ビューポート、１
４：真空排気導管、１５：成長室、１６：サセプタ、１
７：ウエハ、１８：ヒータ、１９：ヒータ端子、２０：
真空排気系、２１：回転機構、２２：ビューポート短
管、２３：冷却水導管、２４：枝管、２５：ベロー、２
６：駆動装置、２７：冷却水流路1 is a front sectional view of a vapor phase growth apparatus which is one embodiment of the present invention, and FIG. 2 is a plan sectional view of FIG. 1: Transport device, 2: Vacuum preparation chamber, 3: Vacuum exhaust system, 4:
Raw material gas supply system, 5: door, 6: gate valve, 7: holder, 8: cassette, 9: rail, 10: cooling water outlet, 1
1: Cooling water inlet, 12: Lid, 13: Viewport, 1
4: vacuum exhaust conduit, 15: growth chamber, 16: susceptor, 1
7: wafer, 18: heater, 19: heater terminal, 20:
Vacuum exhaust system, 21: rotating mechanism, 22: viewport short pipe, 23: cooling water conduit, 24: branch pipe, 25: bellows, 2
6: Drive device, 27: Cooling water flow path
Claims (3)
る回転式サセプタを配置し、該ウエハ上にエピタキシャ
ル成長を行う有機金属気相成長装置において、金属製の
成長室を用い、該成長室側壁に対して一端を窓材で閉じ
た観測用短管を接続し、側壁の接続開口部には開閉可能
な蓋を設け、該蓋の内面を成長室内壁と同一材料で構成
し、かつ、蓋の装着時には成長室内壁と連続する円滑な
面を形成することのできる内面形状を有し、蓋の解放時
には蓋を移動させて収納するための枝管を上記短管に付
設し、さらに、短管若しくは枝管を真空排気系に接続し
たことを特徴とする有機金属気相成長装置。1. A growth chamber made of metal is used in a metal-organic vapor phase epitaxy apparatus in which a rotary susceptor for mounting a semiconductor wafer is arranged in the center of a vertical growth chamber and epitaxial growth is performed on the wafer. An observation short tube whose one end is closed with a window material is connected to the side wall, a lid that can be opened and closed is provided in the connection opening portion of the side wall, and the inner surface of the lid is made of the same material as the growth chamber inner wall, and When the lid is attached, it has an inner surface shape that can form a smooth surface that is continuous with the inner wall of the growth chamber, and when the lid is released, a branch pipe for moving and storing the lid is attached to the short pipe, and further, A metal-organic vapor phase epitaxy apparatus characterized in that a short pipe or a branch pipe is connected to a vacuum exhaust system.
蓋を支持する棒状体をベローの底部に結合して該底部の
後退により蓋を枝管内に収納可能としたことを特徴とす
る特許請求の範囲第一項記載の有機金属気相成長装置。2. A branch pipe is sealed with a bellows having one end closed,
The metal-organic vapor phase epitaxy apparatus according to claim 1, wherein a rod-shaped body that supports the lid is connected to the bottom of the bellows, and the lid is retractable so that the lid can be housed in the branch pipe.
特徴とする特許請求の範囲第一項又は第二項記載の有機
金属気相成長装置。3. The metal-organic vapor phase epitaxy apparatus according to claim 1, wherein the growth chamber and the lid are provided with cooling means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29397787A JPH0628241B2 (en) | 1987-11-24 | 1987-11-24 | Metalorganic vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29397787A JPH0628241B2 (en) | 1987-11-24 | 1987-11-24 | Metalorganic vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01136330A JPH01136330A (en) | 1989-05-29 |
| JPH0628241B2 true JPH0628241B2 (en) | 1994-04-13 |
Family
ID=17801645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29397787A Expired - Lifetime JPH0628241B2 (en) | 1987-11-24 | 1987-11-24 | Metalorganic vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0628241B2 (en) |
-
1987
- 1987-11-24 JP JP29397787A patent/JPH0628241B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01136330A (en) | 1989-05-29 |
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