JPH0646503B2 - Magnetic bubble memory device - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic bubble memory device, and more particularly to a magnetic bubble input / output gate circuit for inputting / outputting a magnetic bubble between a minor loop and a media line.

BACKGROUND OF THE INVENTION FIG. 1 is an enlarged plan view of an essential part showing an example of a swap gate circuit for exchanging magnetic bubble information on a write media line with magnetic bubble information in a minor loop as a magnetic bubble input gate circuit. In the figure, 11,1
Reference numerals 2, 13 and 14 are transfer circuit patterns forming the minor loop 1, and the transfer circuit pattern 12 is particularly called a corner pattern. Reference numerals 21, 22, 23, and 24 are transfer circuit patterns that form the write media line 2, and of these transfer circuit patterns, the transfer circuit patterns 22 and 2 are included.
4 is formed by a sheavron transfer pattern, and the other transfer circuit patterns 21 and 23 are arranged in proximity to the sheepron transfer circuit patterns 22 and 24, respectively, and have the function of assisting the magnetic bubble transfer of the sheepron transfer circuit patterns 22 and 24. is doing. Reference numerals 31, 32, and 33 are magnetic bubble transfer assisting bar patterns for connecting the minor loop 1 and the write media line 2, and 4 is a conductor pattern for a swap gate, which is connected to the minor loop 1 and the write media line 2 and supplies a swap operation current. , The conductor pattern 4 and the hairpin portion 4a thereof are formed by the minor loop 1 and the patterns 11 to 14 of the lightmager line 2 respectively.
21 to 24 and magnetic bubble transfer assisting bar pattern 3
It is formed in a layer below the formation surface of 1 to 33 with an insulating layer (not shown) interposed. The arrow P direction is the magnetic bubble transfer direction.

In the swap gate circuit configured as described above, when the magnetic bubbles are transferred onto the Sieplon type transfer patterns 22 and 24 forming the quadruple long period gate on the write medium line 2, the conductor pattern 4 is transferred during the swap operation.
By applying a predetermined swap current to the magnetic bubble, the magnetic bubble is transferred into the Sieplon type transfer circuit pattern 13 via the bar patterns 32 and 33, and transferred to the minor loop 1. On the other hand, the magnetic bubbles transferred onto the corner pattern 12 of the minor loop 1 are transferred through the bar patterns 31 and 32, respectively.
Are transferred out to each other and replaced with the magnetic bubble information in the minor loop 1.

In the swap gate circuit configured as described above, the hairpin outer peripheral portion 4b of the conductor pattern 4 is located outside the sieplon type transfer circuit patterns 22 and 24, and the hairpin outer peripheral portion 4b allows the transfer circuit pattern 2 to be formed.
By disposing the step structures 2 and 24 so that no step structure is formed in the cross-sectional structure, the loss of the transfer margin due to the step structure is eliminated.

However, in the swap gate circuit thus configured, the maximum current value Ismax of the swap current Is is small, as shown by solid lines Ia and Ib in FIG. Ismin is also getting smaller. This is because the hairpin outer peripheral portion 4b of the conductor pattern 4 is at a stable position with respect to the magnetic bubble due to the swap current Is when performing the transfer-in operation, so that the bar pattern is originally formed from the top portions 22a and 24a of the transfer circuit patterns 22 and 24. Three
The magnetic bubbles to be transferred to the end portions 32a, 33a of the conductors 2, 33 are the hairpin outer peripheral portion 4 of the conductor pattern 4.
It caused a malfunction of extending to b.

[Object of the Invention]

Therefore, the present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to eliminate the occurrence of malfunction of a magnetic bubble input / output gate circuit and to provide a magnetic bubble having excellent transfer characteristics. An object is to provide a magnetic bubble memory device having an input / output gate circuit.

[Outline of Invention]

The present invention allows a pattern of swap gate conductors to be projected up to one edge of a chevron pattern where the forward and return paths of the hairpin intersect, and by projecting the hairpin pattern along the edge to form a cove with a wide portion. It is formed to prevent the malfunction due to the swap current while increasing the transfer margin by eliminating the step due to the conductor. According to the present invention, the following magnetic bubble memory device is provided.

A minor loop group in which a plurality of minor loops (1) in which a plurality of patterns (12, 13, 14) are arranged in a loop are arranged laterally, a large chevron pattern (22, 24) and a small rod-shaped auxiliary transfer pattern (21 , 23) alternately arranged in the lateral direction, a wide portion that extends laterally on the side opposite to the minor loop group based on the major line, and a continuous wide portion,
A conductor (4) having a narrow hairpin portion formed such that the forward path and the return path both intersect the same chevron pattern and the tip overlaps the pattern of the minor loop; and It comprises a minor loop and a swap gate for exchanging magnetic bubbles between the major lines, the conductor is at a lower level of the chevron pattern, and the forward path extends to the outside of one end of the chevron pattern. And, the auxiliary transfer pattern adjacent to the one end and the other chevron pattern adjacent to the one end have a protrusion formed along the one end without overlapping with the other chevron pattern, and the protrusion and the wide portion are formed. A magnetic bubble memory device with a cove formed between them.

Example of Invention

 Next, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 3 is an enlarged plan view of an essential part showing an example of a swap gate circuit, for example, as a magnetic bubble input / output gate circuit relating to the magnetic bubble memory device according to the present invention. The same symbols as those in FIG. Is omitted. In the figure, the hairpin outer peripheral portion 4b of the portion 4c of the conductor pattern hairpin portion 4a that intersects the transfer circuit patterns 22 and 24 is formed and arranged on the outer peripheral portion of the transfer circuit patterns 22 and 24. Four
The minimum pattern width W of the connecting portion 4d with the hairpin portion 4a is formed so as to have a relationship of W <W 'with respect to the maximum pattern width W'of the intersecting portion 4c of the hairpin portion 4a with the transfer patterns 22 and 24. ing.

According to such a configuration, since the pattern width W of the connecting portion 4d is made smaller than the pattern width W'of the intersecting portion 4c, the swap current Is flowing along the hairpin outer peripheral portion 4b is reduced, and the hairpin outer periphery is reduced. Since the portion 4b is not in the stable position of the magnetic bubble, the transfer error of the magnetic bubble during the transfer-in operation is less likely to occur. Therefore, as shown by the broken line Ia 'in FIG. 2, the maximum current value Ismax of the swap current Is is improved and the current margin is expanded. In addition, the pattern width W of the connecting portion 4d is set to the hairpin portion 4a.
By providing the minimum pattern width W ″ and WW ″ of the above, it is possible to obtain an extremely good current amplitude margin.

Although the swap gate circuit is described as the magnetic bubble input / output gate circuit in the above-described embodiments, the present invention is not limited to this, and a replicate gate circuit, a transfer-in gate circuit, a transfer-out gate circuit, Of course, the same effect as described above can be obtained even when applied to a generator gate circuit or the like.

〔The invention's effect〕

As described above, according to the present invention, it is possible to eliminate the occurrence of malfunctions in the magnetic bubble input / output gate circuit.
It has an extremely excellent effect of obtaining a magnetic bubble memory device having high quality and reliability.

[Brief description of drawings]

FIG. 1 is an enlarged plan view of an essential part showing an example of a swap gate circuit of a magnetic bubble memory device, FIG. 2 is a diagram showing a swap current amplitude characteristic of a swap gate circuit, and FIG. 3 is an embodiment of a magnetic bubble memory device according to the present invention. It is a principal part enlarged plan view of the swap gate circuit which shows an example. 1 ... Minor loop, 2 ... Light media line, 4 ...
… Conductor pattern, 4a …… Hairpin part, 4b ……
Hairpin outer part, 4c ... intersection, 4d ... connecting part,
11, 12, 13, 14, 21, 22, 23, 24 ... Transfer circuit pattern, 22a, 24a ... Top, 31, 32, 33 ...
… Transfer assist bar pattern, 32a, 33a… End.

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Naoki Miyamoto 2 3350 Hayano, Mobara-shi, Chiba 2 Hitachi Device Engineering Co., Ltd. (56) References JP-A-56-11678 (JP, A)

Claims (1)

[Claims] 1. A minor loop group in which a plurality of minor loops (1) in which a plurality of patterns (12, 13, 14) are arranged in a loop are laterally arranged, a large chevron pattern (22, 24) and a small rod-like shape. A major line (2) in which auxiliary transfer patterns (21, 23) are alternately arranged in the lateral direction, a wide portion that extends laterally on the side opposite to the minor loop group based on the major line, and the wide portion. Continuously,
A conductor (4) having a narrow hairpin portion formed such that the forward path and the return path both intersect the same chevron pattern and the tip overlaps the pattern of the minor loop; and It comprises a minor loop and a swap gate for exchanging magnetic bubbles between the major lines, the conductor is at a lower level of the chevron pattern, and the forward path extends to the outside of one end of the chevron pattern. And, the auxiliary transfer pattern adjacent to the one end and the other chevron pattern adjacent to the one end have a protrusion formed along the one end without overlapping with the other chevron pattern, and the protrusion and the wide portion are formed. A magnetic bubble memory device characterized in that a cove is formed between them.