JPH0715922B2 - Semiconductor device inspection equipment - Google Patents
Semiconductor device inspection equipmentInfo
- Publication number
- JPH0715922B2 JPH0715922B2 JP7288387A JP7288387A JPH0715922B2 JP H0715922 B2 JPH0715922 B2 JP H0715922B2 JP 7288387 A JP7288387 A JP 7288387A JP 7288387 A JP7288387 A JP 7288387A JP H0715922 B2 JPH0715922 B2 JP H0715922B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- inspection
- semiconductor
- defect
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 238000007689 inspection Methods 0.000 title claims description 28
- 230000007547 defect Effects 0.000 claims description 16
- 230000008439 repair process Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 2
- 230000002950 deficient Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の検査装置に監視、特に半導体装置
の不良救済及び不良の検査結果を印字する装置に関す
る。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection device for a semiconductor device, and more particularly to a device for relieving a defect of the semiconductor device and printing an inspection result of the defect.
従来、メモリ素子などのような機能素子からなる複数個
の半導体装置が規則正しく配列されている半導体ウェー
ハ上の半導体装置を検査する装置として、ICテスタと呼
ばれる特性試験装置と、ウェーハープローバと呼ばれ半
導体ウェハーを載物台（ステージ）に載せ間欠送り機構
によって１チップづつ送る機能を有した装置があった。
この半導体ウェハー上の半導体装置の位置情報は、プロ
ーバの移動座標として、ICテスタに情報がケーブルによ
って転送され、また半導体装置上の不良個所はICテスタ
により電気的に特定されている。Conventionally, as a device for inspecting a semiconductor device on a semiconductor wafer in which a plurality of semiconductor devices composed of functional elements such as memory elements are regularly arranged, a characteristic test device called an IC tester and a semiconductor prober called a wafer prober There has been an apparatus having a function of placing a wafer on a stage (stage) and feeding each chip by an intermittent feed mechanism.
The position information of the semiconductor device on the semiconductor wafer is transferred as a moving coordinate of the prober to the IC tester by a cable, and the defective portion on the semiconductor device is electrically specified by the IC tester.
この半導体ウェハー上の半導体装置の位置情報と、この
半導体装置上の不良個所情報は、フロッピーディスクや
ケーブルによりトリーマと呼ばれる不良救済装置へ転送
されている。このトリーマではその情報に基いて、不良
半導体装置にあらかじめ余分にもうけられた機能素子の
アドレスに、不良個所の機能素子のアドレスを変更する
ように、レーザ光によりヒューズを切断している。The position information of the semiconductor device on the semiconductor wafer and the defect location information on the semiconductor device are transferred to a defect relief device called a trimmer by a floppy disk or a cable. In this trimmer, based on the information, the fuse is cut by laser light so that the address of the functional element at the defective portion is changed to the address of the functional element previously provided in the defective semiconductor device.
例えば、第３図の半導体ウェハーの平面図に示すよう
に、この半導体ウェハー１は切断線４によって多数の半
導体装置２に分けられており、トリーマによって切断さ
れた切断ヒューズ５が示されている。このような処理を
した半導体ウェハー１上の半導体装置２を再びウェハー
プローバに載せ、ICテスタで第２の検査を行い、不良個
所が多過ぎて救済が不可能であった半導体装置は、この
ICテスタ（プローバ）に付随しているマーキング装置に
よって表面に不良マーク３がマーキングされていた。For example, as shown in the plan view of the semiconductor wafer in FIG. 3, the semiconductor wafer 1 is divided into a large number of semiconductor devices 2 by cutting lines 4, and a blowing fuse 5 cut by a trimmer is shown. The semiconductor device 2 on the semiconductor wafer 1 that has been subjected to such a process is placed on the wafer prober again, and the second inspection is performed by the IC tester.
The defective mark 3 was marked on the surface by the marking device attached to the IC tester (prober).
上述した従来の検査装置では、ICテスタによる検査を２
度も繰り返す為に、一つの半導体装置の検査工数が２倍
かかることになり、また検査を二度行うので、半導体装
置に電極パッドに２度測定用探針群をあてることにな
り、電極パッドのアルミのダメージが大きくなるという
欠点があった。In the conventional inspection device described above, the inspection by the IC tester is
Since the number of inspection steps for one semiconductor device is doubled because the inspection is repeated twice, and the inspection is performed twice, the probe group for measurement is applied twice to the electrode pad on the semiconductor device. There was a disadvantage that the damage of the aluminum of becomes large.
本発明の目的は、このような欠点を除き、検査工数を削
減すると共に、電極パッドのダメージを少くした半導体
装置の検査装置を提供することにある。An object of the present invention is to eliminate the above drawbacks and to provide an inspection device for a semiconductor device in which the number of inspection steps is reduced and the damage to the electrode pad is reduced.
本発明の半導体装置の検査装置は、半導体ウェハーを載
置しその位置決めを行うプローバと、このプローバ上の
半導体ウェハー上にある複数の半導体装置の特性検査を
行うICテスタとを含むこ検査部と；この検査部から救済
処置により救済でき不良をもった半導体装置の不良個所
情報とこの半導体装置の半導体ウェハー上の位置情報と
を受け冗長回路の救済用ヒューズを切断して救済処置を
行う救済処理部と、救済処理により救済できない不良を
もつ半導体装置の半導体ウェハー上の位置情報を受け、
その半導体装置に不良マークをつけるマーキング部とを
トリーマ部とを備えることを特徴とする。The semiconductor device inspection apparatus of the present invention includes a prober for mounting and positioning a semiconductor wafer, and an IC tester including an IC tester for inspecting the characteristics of a plurality of semiconductor devices on the semiconductor wafer on the prober. A repair process for receiving a defect location information of a semiconductor device having a defect that can be repaired by a repair process from this inspection unit and position information on the semiconductor wafer of this semiconductor device, and blows the repair fuse of the redundant circuit to perform the repair process. Section and position information on the semiconductor wafer of a semiconductor device having a defect that cannot be repaired by the repair process,
The semiconductor device is provided with a marking section for marking a defective mark and a trimmer section.
以下、本発明について図面を用いて説明する。第１図は
本発明の一実施例のブロック図である。本実施例の検査
装置は、半導体装置の検査部10とトリーマ部20とから構
成される。まず、検査部10において、プローバ11上にの
せた半導体ウェハー１をICテスタ12を用いて各半導体装
置２の検査を行ない、救済できる不良しかもたない半導
体装置については、その不良アドレスを半導体ウェハー
上の半導体装置の位置情報と同時に収集する。The present invention will be described below with reference to the drawings. FIG. 1 is a block diagram of an embodiment of the present invention. The inspection apparatus of this embodiment is composed of a semiconductor device inspection unit 10 and a trimmer unit 20. First, in the inspection unit 10, the semiconductor wafer 1 placed on the prober 11 is inspected by using the IC tester 12 for each semiconductor device 2, and for the semiconductor device which has only a defect that can be relieved, the defective address is recorded on the semiconductor wafer. The position information of the semiconductor device is collected at the same time.
また、救済できない不良をもつ半導体装置２についても
半導体ウェハー１上の位置座標を収集する。Further, the position coordinates on the semiconductor wafer 1 are also collected for the semiconductor device 2 having a defect that cannot be repaired.
これらの検査部から収集された情報は、通信路あるいは
フロッピーディスク等により、トリーマ部20に伝送され
る。このトリーマ部20は救済処置部21とマーキング部22
とからり、救済処置部21、救済用ヒューズを切断するた
めのレーザ光源と、その位置出し機構とを有している。
これらの情報によって救済可能な不良をもつ半導体装置
２については、救済処置部21により、不良救済用のヒュ
ーズを第３図の切断ヒューズ５のように切断し、救済不
可能な不良をもつ半導体装置については、マーーキング
部22によって不良マーク３を印字する。The information collected from these inspection units is transmitted to the trimmer unit 20 via a communication path, a floppy disk, or the like. The trimmer unit 20 includes a relief treatment unit 21 and a marking unit 22.
In addition, the repair processing section 21, a laser light source for cutting the repair fuse, and a positioning mechanism for the laser light source are provided.
For the semiconductor device 2 having a defect that can be remedied by these pieces of information, the remedy processing unit 21 cuts the defect relief fuse like a disconnecting fuse 5 in FIG. With respect to, the marking mark 22 is printed by the marking unit 22.
第２図は本発明の別の実施例のブロック図である。本実
施例は、複数の検査部10,10′,10″を備え、これらの検
査結果を通信路あるいは、フロッピーディスク等によ
り、トリーマ部20に伝送し、その情報により不良救済用
のヒューズ切断や、救済不可能な不良をもつ半導体装置
への不良マーク３を印字する。FIG. 2 is a block diagram of another embodiment of the present invention. The present embodiment is provided with a plurality of inspection units 10, 10 ′, 10 ″, and transmits the inspection results to the trimmer unit 20 via a communication path, a floppy disk, etc. The defective mark 3 is printed on a semiconductor device having an irreparable defect.
以上説明したように本発明によれば、従来二度にわけて
検査されてきた不良救済のデータ収集の検査と、救済作
業後の良品を判別を行い不良品にマークをつける作業
を、一度の検査で実施することができる。このため検査
コストを大幅に低減できると同時に、電極パッドのアル
ミへのダメージを減少させることが出来る。また、検査
装置毎のマーキング装置を、トリーマのマーキング装置
だけで運用できるため、検査部のマーキング装置が不用
となり、検査装置の価格を低減することができる。As described above, according to the present invention, the inspection of the data collection of the defective relief, which has been conventionally divided twice, and the work of discriminating the good product after the relief work and marking the defective product are performed once. It can be carried out by inspection. Therefore, the inspection cost can be significantly reduced, and at the same time, the damage to the aluminum of the electrode pad can be reduced. Further, since the marking device for each inspection device can be operated only by the marking device of the trimmer, the marking device of the inspection unit becomes unnecessary, and the cost of the inspection device can be reduced.
第１図、第２図は本発明の第１および第２の一実施例の
ブロック図、第３図は一般の半導体ウェハー上の半導体
装置の平面図である。 １……半導体ウェハー、２……半導体装置、３……不良
マーク、４……切断線、５……切断ヒューズ、10,10′,
10″……検査部、11……プローバ、12……ICテスタ、20
……トリーマ部、21……救済処置部、22……マーキング
部。1 and 2 are block diagrams of first and second embodiments of the present invention, and FIG. 3 is a plan view of a semiconductor device on a general semiconductor wafer. 1 ... semiconductor wafer, 2 ... semiconductor device, 3 ... defective mark, 4 ... cutting line, 5 ... cutting fuse, 10,10 ′,
10 ″ …… Inspection department, 11 …… Prober, 12 …… IC tester, 20
...... Trimmer section, 21 …… Relief treatment section, 22 …… Marking section.
Claims (1)
うプローバと、このプローバ上の半導体ウェーハ上にあ
る複数の半導体装置の特性検査を行うICテスタとを含む
検査部と；この検査部から救済処置により救済できる不
良をもった半導体装置の不良個所情報とこの半導体装置
の半導体ウェハー上の位置情報とを受け冗長回路の救済
用ヒューズを切断して救済処置を行う救済処理部と、救
済処理により救済できない不良をもつ半導体装置の半導
体ウェーハー上の位置情報を受け、その半導体装置に不
良マークをつけるマーキング部とを含むトリーマ部とを
備えることを特徴とする半導体装置の検査装置。1. An inspection unit including a prober for mounting and positioning a semiconductor wafer and an IC tester for inspecting the characteristics of a plurality of semiconductor devices on the semiconductor wafer on the prober; A repair processing section that disconnects the repair fuse of the redundant circuit to perform repair processing by receiving defect location information of a semiconductor device having a defect that can be repaired by the procedure and position information on the semiconductor wafer of this semiconductor device, and a repair processing. An inspection apparatus for a semiconductor device, comprising: a trimmer unit including a marking unit for receiving position information on a semiconductor wafer of a semiconductor device having a defect that cannot be repaired and for marking the semiconductor device with a defect mark.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7288387A JPH0715922B2 (en) | 1987-03-25 | 1987-03-25 | Semiconductor device inspection equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7288387A JPH0715922B2 (en) | 1987-03-25 | 1987-03-25 | Semiconductor device inspection equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63237432A JPS63237432A (en) | 1988-10-03 |
| JPH0715922B2 true JPH0715922B2 (en) | 1995-02-22 |
Family
ID=13502177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7288387A Expired - Fee Related JPH0715922B2 (en) | 1987-03-25 | 1987-03-25 | Semiconductor device inspection equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0715922B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2956597B2 (en) * | 1996-07-31 | 1999-10-04 | 日本電気株式会社 | Semiconductor inspection equipment |
-
1987
- 1987-03-25 JP JP7288387A patent/JPH0715922B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63237432A (en) | 1988-10-03 |
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