JPH0750790B2 - Zener diode - Google Patents
Zener diodeInfo
- Publication number
- JPH0750790B2 JPH0750790B2 JP60160727A JP16072785A JPH0750790B2 JP H0750790 B2 JPH0750790 B2 JP H0750790B2 JP 60160727 A JP60160727 A JP 60160727A JP 16072785 A JP16072785 A JP 16072785A JP H0750790 B2 JPH0750790 B2 JP H0750790B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- zener diode
- anode
- anode region
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000926 separation method Methods 0.000 claims description 14
- 238000000605 extraction Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 210000005182 tip of the tongue Anatomy 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明はツェナーダイオード、特に半導体集積回路に組
み込まれるツェナーダイオードの改良に関する。The present invention relates to a Zener diode, and more particularly to an improvement of a Zener diode incorporated in a semiconductor integrated circuit.
（ロ）従来の技術 従来のツェナーダイオードを第３図乃至第６図を参照し
て説明する。(B) Conventional Technology A conventional Zener diode will be described with reference to FIGS. 3 to 6.
第３図および第４図に示すツェナーダイオードは、Ｐ型
半導体基板（21）上に形成しＮ型エピタキシャル層（2
2）をP+型分離領域（23）により島状に分離して島領域
（24）を形成し、島領域（24）表面にP+型アノード領域
（25）とN+型カソード領域（26）とを二重拡散し、各領
域（25）（26）にアノード電極（27）とカソード電極
（28）を付着していた。なお島領域（24）底面にはN+型
のの埋め込み層（29）が設けられている。The Zener diode shown in FIGS. 3 and 4 is formed on a P-type semiconductor substrate (21) and formed into an N-type epitaxial layer (2
2) is separated into an island shape by the P + type separation area (23) to form an island area (24), and the P + type anode area (25) and the N + type cathode area (26) are formed on the surface of the island area (24). ) Was double-diffused, and the anode electrode (27) and the cathode electrode (28) were attached to each region (25) (26). An N + type buried layer (29) is provided on the bottom surface of the island region (24).
斯上の構造を有するツェナーダイオードではカソード領
域（26）をアノード領域（25）で完全に囲んでいるの
で、カソード領域（25）の電流密度を上げることができ
ずダイオードのIV特性の立上がりに寄因する低周波ノイ
ズを増大させる欠点があった。In the Zener diode having the above structure, the cathode region (26) is completely surrounded by the anode region (25), so that the current density in the cathode region (25) cannot be increased and the IV characteristic of the diode tends to rise. There is a drawback that the low frequency noise caused is increased.
そこで斯る欠点を除するために第５図および第６図に示
すツェナーダイオードが考えられた。このツェナーダイ
オードは、Ｐ型半導体基板（31）上に形成したＮ型エピ
タキシャル層（32）をP+型分離領域（33）によって島状
に分離して島領域（34）を形成し、島領域（34）表面に
P+型アノード領域（35）とN+型カソード領域（36）とを
離間して設け、カソード領域（36）から突出する舌片
（37）とアノード領域（35）とを重畳させて形成してい
る。なおアノード領域（35）とカソード領域（36）には
夫々アノード電極（38）とカソード電極（39）を設け、
島領域（34）の底面にはN+型埋め込み層（40）を設けて
いる。Then, in order to eliminate such a defect, the Zener diode shown in FIG. 5 and FIG. 6 was considered. In this Zener diode, an N type epitaxial layer (32) formed on a P type semiconductor substrate (31) is separated into islands by a P + type separation region (33) to form an island region (34). (34) On the surface
The P + -type anode region (35) and the N + -type cathode region (36) are provided separately from each other, and the tongue piece (37) protruding from the cathode region (36) and the anode region (35) are overlapped with each other. ing. An anode electrode (38) and a cathode electrode (39) are provided in the anode region (35) and the cathode region (36), respectively.
An N + type buried layer (40) is provided on the bottom surface of the island region (34).
斯るツェナーダイオードでは舌片（37）のみでツェナー
ダイオードのPN接合を形成しているので、前述した第３
図の構造に比べて電流密度を増大でき低周波ノイズを低
減できるのである。In such a Zener diode, the PN junction of the Zener diode is formed only by the tongue piece (37).
Compared with the structure shown in the figure, the current density can be increased and the low frequency noise can be reduced.
（ハ）発明が解決しようとする問題点 しかしながら斯る改良された従来のツェナーダイオード
では1MHZ以上の高周波ノイズが発生することが判明し
た。アノード電極（38）は舌片（37）より一定距離離し
て帯状に形成されているので、舌片（37）の先端の取り
出し抵抗は小さいが舌片（37）の側面については取り出
し抵抗が増加する。このための取り出し抵抗の増加によ
る直列抵抗成分により、電圧成分ノイズである高周波ノ
イズが増加する欠点がある。(C) Problems to be Solved by the Invention However, it has been found that high frequency noise of 1 MHz or more is generated in such an improved conventional Zener diode. Since the anode electrode (38) is formed in a strip shape with a certain distance from the tongue piece (37), the take-out resistance at the tip of the tongue piece (37) is small, but the take-out resistance increases at the side surface of the tongue piece (37). To do. Therefore, there is a drawback that high-frequency noise, which is voltage component noise, increases due to a series resistance component due to an increase in extraction resistance.
（ニ）問題点を解決するための手段 本発明は斯上した欠点に鑑みてなされ、アノード領域
（５）の周辺に重畳して分離領域（３）を拡張して設け
ることにより、従来の欠点を大幅に改善したツェナーダ
イオードを実現するものである。(D) Means for Solving the Problems The present invention has been made in view of the above-mentioned drawbacks, and the conventional drawbacks are obtained by providing the separation region (3) by expanding the periphery of the anode region (5) so as to overlap it. It is intended to realize a Zener diode in which is greatly improved.
（ホ）作用 本発明に依れば、分離領域（３）でカソード領域（６）
の舌片（７）を囲むため、舌片（７）からアノード領域
（５）からの取り出し抵抗を分離領域（３）の低抵抗を
利用して低減でき、取り出し抵抗に寄因する高周波ノイ
ズを低減できるのである。(E) Action According to the present invention, the cathode region (6) is formed in the separation region (3).
Since the tongue piece (7) is surrounded, the extraction resistance from the tongue piece (7) to the anode region (5) can be reduced by utilizing the low resistance of the separation region (3), and the high frequency noise caused by the extraction resistance can be reduced. It can be reduced.
（ヘ）実施例 以下に本発明によるツェナーダイオードを第１図および
第２図を参照して説明する。(F) Example A Zener diode according to the present invention will be described below with reference to FIGS. 1 and 2.
本発明に依るツェナーダイオードは、Ｐ型の半導体基板
（１）上に形成したＮ型エピタキシャル層（２）をP+型
分離領域（３）により島状に分離して島領域（４）を形
成し、島領域（４）表面にP+型アノード領域（５）とN+
型カソード領域（６）とを離間して設け、カソード領域
（６）から突出して設けた舌片（７）とアノード領域
（５）とを重畳させて形成している。従ってツェナーダ
イオードのPN接合は舌片（７）とアノード領域（５）と
で形成されている。A Zener diode according to the present invention forms an island region (4) by separating an N-type epitaxial layer (2) formed on a P-type semiconductor substrate (1) into islands by a P + -type isolation region (3). Then, the P + type anode region (5) and N + are formed on the surface of the island region (4).
The mold cathode region (6) is provided separately, and the tongue piece (7) provided so as to project from the cathode region (6) and the anode region (5) are overlapped with each other. Therefore, the PN junction of the Zener diode is formed by the tongue piece (7) and the anode region (5).
本発明の特徴はアノード領域（５）の周辺に重畳して分
離領域（３）を拡張して設ける点にある。分離領域
（３）は分離拡散時に予定のアノード領域（５）の舌片
（７）と重畳した一辺を除く３辺に重畳して設けられ、
舌片（７）をコの字状に囲んでいる。従って分離領域
（３）はアノード領域（５）より深く拡散されるのでア
ノード領域（５）よりはるかに低抵抗の取り出しが可能
となり、またアノード領域（５）は拡散層で分離領域
（３）と接続されるのでアノード電極も不要となる。な
おカソード領域（６）にはカソード電極（８）を設け、
島領域（４）の底面にはN+型の埋め込み層（９）を設け
ている。A feature of the present invention is that the separation region (3) is extended and provided so as to overlap the periphery of the anode region (5). The separation region (3) is provided so as to be overlapped on three sides of the anode region (5) except the one side which is overlapped with the tongue piece (7) at the time of separation and diffusion,
It surrounds the tongue (7) in a U-shape. Therefore, since the isolation region (3) is diffused deeper than the anode region (5), it is possible to take out with much lower resistance than the anode region (5), and the anode region (5) is a diffusion layer and serves as the isolation region (3). Since it is connected, the anode electrode is also unnecessary. In addition, a cathode electrode (8) is provided in the cathode region (6),
An N + type buried layer (9) is provided on the bottom surface of the island region (4).
本発明の構造に依れば、舌片（７）全周からの取り出し
抵抗を分離領域（３）の低抵抗を利用して小さく抑える
ことができ、電圧成分ノイズである高周波ノイズを低減
できる。またアノード領域（５）は直接分離領域（３）
に接続されるので、ツェナーダイオードのアノード電極
は不要となり配線のスペースを確保できる。According to the structure of the present invention, the extraction resistance from the entire circumference of the tongue piece (7) can be suppressed to be small by utilizing the low resistance of the separation region (3), and the high frequency noise that is the voltage component noise can be reduced. The anode region (5) is the direct separation region (3).
Therefore, the anode electrode of the Zener diode is not necessary, and the wiring space can be secured.
第７図では従来例と本発明のツェナーダイオードのノイ
ズレベルの周波数特性が示されている。実線で示す従来
（１）の曲線は第３図に示す従来のツェナーダイオード
のノイズレベルであり、高周波ノイズが少ない反面低周
波ノイズは大きくなっている。実線で示す従来（２）の
曲線は第５図に示す改良された従来のツェナーダイオー
ドのノイズレベルであり、低周波ノイズは改善されてい
るが高周波ノイズが従来（１）よりも大きくなっている
のが分かる。点線で示す本発明の曲線は高周波ノイズが
一段と改善されており、従来（１）のものに対して約6d
Bの改善がなされている。FIG. 7 shows the frequency characteristics of the noise level of the conventional example and the Zener diode of the present invention. The curve of the conventional (1) shown by the solid line is the noise level of the conventional Zener diode shown in FIG. 3, and although the high frequency noise is small, the low frequency noise is large. The curve of the conventional (2) shown by the solid line is the noise level of the improved conventional Zener diode shown in FIG. 5. The low frequency noise is improved, but the high frequency noise is larger than that of the conventional (1). I understand. The curve of the present invention shown by the dotted line is further improved in high frequency noise, and is about 6d compared to the conventional one.
B improvements have been made.
（ト）発明の効果 本発明に依れば、分離領域（３）を拡張してアノード領
域（５）の周辺に重畳して設けることによりアノード領
域（５）の取り出し抵抗を大幅に低減できるので、ツェ
ナーダイオードの高周波ノイズを大幅に改善できる利点
を有する。(G) Effect of the Invention According to the present invention, the extraction resistance of the anode region (5) can be significantly reduced by expanding the separation region (3) so as to overlap the periphery of the anode region (5). The advantage is that the high-frequency noise of the Zener diode can be greatly improved.
また本発明では分離領域（３）を用いることによりツェ
ナーダイオードのアノード領域（５）とアース電位との
接続を拡散により達成できるので、アノード電極を不要
とし配線のスペースを劾拡大でき高集積化を実現でき
る。Further, in the present invention, since the connection between the anode region (5) of the Zener diode and the ground potential can be achieved by diffusion by using the separation region (3), the anode electrode is not required and the wiring space can be increased to achieve high integration. realizable.
更に本発明では何ら付加的工程を必要とせず、現状のツ
ェナーダイオードに直ちに採用できる利点を有する。Further, the present invention has an advantage that it can be immediately adopted in the current Zener diode without requiring any additional process.
更に本発明のツェナーダイオードを用いることにより組
み込み回路のノイズ特性を著しく改善でき、S/N比の高
い回路を容易に得ることができる。Furthermore, by using the Zener diode of the present invention, the noise characteristics of the embedded circuit can be remarkably improved, and a circuit with a high S / N ratio can be easily obtained.
第１図は本発明に依るツェナーダイオードを説明する上
面図、第２図は第１図のII−II線断面図、第３図および
第５図は従来のツェナーダイオードを説明する上面図、
第４図および第６図は夫々第３図のIV−IV線断面図およ
び第５図のVI−VI線断面図、第７図は本発明および従来
のツェナーダイオードのノイズレベル周波数特性を説明
する特性図である。 主な図番の説明 （３）は分離領域、（４）は島領域、（５）はアノード
領域、（６）はカソード領域、（７）は舌片である。1 is a top view for explaining a Zener diode according to the present invention, FIG. 2 is a sectional view taken along the line II-II of FIG. 1, and FIGS. 3 and 5 are top views for explaining a conventional Zener diode.
4 and 6 are sectional views taken along the line IV-IV of FIG. 3 and sectional view taken along the line VI-VI of FIG. 5, respectively. FIG. 7 illustrates the noise level frequency characteristics of the present invention and the conventional Zener diode. It is a characteristic diagram. Description of main drawing numbers (3) is a separation region, (4) is an island region, (5) is an anode region, (6) is a cathode region, and (7) is a tongue piece.
Claims (1)
型のエピタキシャル層を一導電型の分離領域で電気的に
分離した島領域の表面に前記分離領域よりも拡散深さが
浅い一導電型のアノード領域を形成し、前記島領域の表
面に形成した逆導電型のカソード領域を舌片状に突出さ
せ該舌片部を前記アノード領域の表面に重畳させたツェ
ナーダイオードにおいて、 前記分離領域を拡張して前記アノード領域と前記カソー
ド領域の舌片部との重畳部分を囲むように前記アノード
領域の周辺に重畳させて前記アノード領域の取り出し抵
抗を減少させ且つ前記アノード領域を前記分離領域を介
して接地することを特徴とするツェナーダイオード。1. A surface of an island region electrically separated by an isolation region of one conductivity type from an epitaxial layer of the opposite conductivity type laminated on a semiconductor substrate of one conductivity type has a diffusion depth shallower than that of the isolation region. In a Zener diode in which a conductive type anode region is formed, a reverse conductive type cathode region formed on the surface of the island region is projected in a tongue shape, and the tongue portion is superposed on the surface of the anode region, The region is expanded to overlap the periphery of the anode region so as to surround the overlapping portion of the anode region and the tongue portion of the cathode region to reduce the extraction resistance of the anode region and to separate the anode region from the separation region. Zener diode characterized by being grounded via.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60160727A JPH0750790B2 (en) | 1985-07-19 | 1985-07-19 | Zener diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60160727A JPH0750790B2 (en) | 1985-07-19 | 1985-07-19 | Zener diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6221280A JPS6221280A (en) | 1987-01-29 |
| JPH0750790B2 true JPH0750790B2 (en) | 1995-05-31 |
Family
ID=15721154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60160727A Expired - Fee Related JPH0750790B2 (en) | 1985-07-19 | 1985-07-19 | Zener diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0750790B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0638504B2 (en) * | 1987-04-17 | 1994-05-18 | 三洋電機株式会社 | Semiconductor integrated circuit |
-
1985
- 1985-07-19 JP JP60160727A patent/JPH0750790B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6221280A (en) | 1987-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |