JPH0760482B2 - Magnetic recording method - Google Patents
Magnetic recording methodInfo
- Publication number
- JPH0760482B2 JPH0760482B2 JP61155593A JP15559386A JPH0760482B2 JP H0760482 B2 JPH0760482 B2 JP H0760482B2 JP 61155593 A JP61155593 A JP 61155593A JP 15559386 A JP15559386 A JP 15559386A JP H0760482 B2 JPH0760482 B2 JP H0760482B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- metal thin
- ferromagnetic metal
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 7
- 239000010409 thin film Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 230000005294 ferromagnetic effect Effects 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 28
- 239000002985 plastic film Substances 0.000 claims description 11
- 229920006255 plastic film Polymers 0.000 claims description 11
- 230000000717 retained effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 116
- 239000010408 film Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 238000011282 treatment Methods 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000010419 fine particle Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- -1 Z It may contain n Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000314 lubricant Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910018553 Ni—O Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- HIQIXEFWDLTDED-UHFFFAOYSA-N 4-hydroxy-1-piperidin-4-ylpyrrolidin-2-one Chemical compound O=C1CC(O)CN1C1CCNCC1 HIQIXEFWDLTDED-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000008131 herbal destillate Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】 I 発明の背景 技術分野 本発明は、磁気記録媒体、特に金属薄膜型の磁気記媒体
を用いる磁気記録方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording method using a magnetic recording medium, particularly a metal thin film type magnetic recording medium.
先行技術とその問題点 ビデオ用、オーディオ用等の磁気記録媒体として、テー
プ化して巻回したときのコンパクト性から、金属薄膜型
の磁性層を有するものの開発が活発に行なわれている。2. Description of the Related Art and Related Problems As a magnetic recording medium for video, audio, etc., a magnetic recording medium having a metal thin film type magnetic layer has been actively developed due to its compactness when formed into a tape and wound.
このような金属薄膜型の媒体の磁性層としては、特性
上、基体法線に対し所定の傾斜角にて蒸着を行なう、い
わゆる斜め蒸着法によって形成したCo系、Co−Ni系等か
らなる蒸着膜が好適である。The magnetic layer of such a metal thin film type medium is characteristically vapor-deposited of Co-based or Co-Ni-based, which is formed by a so-called oblique vapor deposition method in which vapor deposition is performed at a predetermined inclination angle with respect to the substrate normal line. Membranes are preferred.
このような媒体では、小型化、長時間記録等のため、よ
り薄いフィルムを用いた媒体の研究が進められている
が、走行性、耐久性、強磁性金属薄膜の強度等の点で問
題が生じる。For such media, research has been conducted on media using thinner films for downsizing, long-time recording, etc., but problems such as runnability, durability, strength of ferromagnetic metal thin film, etc. Occurs.
そこで、これらの不都合を解消するため、フィルム裏面
に金属薄膜補強層を設ける旨の提案(特開昭56−16939
号、同58−97131号、同57−78627号、同57−37737号)
あるいはフィルム表面に微粒子を配設してヘッドタッ
チ、走行面で改良をなす旨の提案(特開昭58−68227
号、同58−100221号)等がなされている。Therefore, in order to eliminate these disadvantages, it is proposed to provide a metal thin film reinforcing layer on the back surface of the film (JP-A-56-16939).
No. 58-97131, No. 57-78627, No. 57-37737)
Alternatively, it is proposed that fine particles are provided on the film surface to improve the head touch and the running surface (Japanese Patent Laid-Open No. 58-68227).
No. 58-100221).
また、耐久性や電磁変換特性を向上させるために、強磁
性金属薄膜層を2層以上の多層構成とする旨の提案も種
々行なわれている(特開昭54−141608号、特公昭56−26
892号、特開昭57−130228号等)。Further, in order to improve durability and electromagnetic conversion characteristics, various proposals have been made that the ferromagnetic metal thin film layer has a multilayer structure of two or more layers (Japanese Patent Laid-Open No. 141608/54, Japanese Patent Publication No. 56-56). 26
892, JP-A-57-130228, etc.).
しかし、現状では、走行性、耐久性、強磁性薄膜強度が
良好で、かつ電磁変換特性の面でも不都合の生じない技
術は未だ実現していない。However, at present, a technology which has good running property, durability, ferromagnetic thin film strength, and causes no inconvenience in terms of electromagnetic conversion characteristics has not yet been realized.
II 発明の目的 本発明の目的は、媒体の走行性が良好で、走行による磁
性層のクラックやケズレが少なく、さらにヘッド摩耗量
およびドロップアウトが少なく、電磁変換特性の良好な
金属薄膜型の磁気記録媒体を用いる磁気記録方法を提供
することにある。II Object of the invention The object of the present invention is a metal thin film type magnetic medium having good running property of the medium, less cracks and scratches of the magnetic layer due to running, less head wear and dropout, and good electromagnetic conversion characteristics. It is to provide a magnetic recording method using a recording medium.
II 発明の開示 このような目的は、下記の本発明によって達成される。II DISCLOSURE OF THE INVENTION Such an object is achieved by the present invention described below.
すなわち、本発明はプラスチックフィルム上にCoを主成
分とする厚さ0.05〜0.5μmの強磁性金属薄膜層を有
し、 この強磁性金属薄膜層が2以上の層からなる多層構造を
有し、 その最下層のプラスチックフィルム側界面近傍の酸素濃
度C2を最上層のプラスチックフィルムと反対側表面近傍
の酸素濃度C1で除した値C2/C1が0.3以下であり、 前記C1が0.2〜0.6であり、 最上層および全強磁性金属薄膜層の平均酸素濃度がそれ
ぞれ0.1〜0.5であり、 5MHz以上の高周波領域の信号を主として前記最上層が保
持し、0.75MHzないしその近傍の低周波領域の信号を主
として下層が保持するように磁気記録を行い、 前記高周波領域および低周波領域の信号の出力と走行耐
久性とを向上させる磁気記録方法である。That is, the present invention has a ferromagnetic metal thin film layer containing Co as a main component and having a thickness of 0.05 to 0.5 μm on a plastic film, and this ferromagnetic metal thin film layer has a multi-layer structure composed of two or more layers, its lowermost plastic film side near the interface the oxygen concentration C 2 was divided by the oxygen concentration C 1 of the opposite surfaces near the top layer of plastic film value C 2 / C 1 is 0.3 or less, wherein C 1 is 0.2 The average oxygen concentration of the uppermost layer and the total ferromagnetic metal thin film layer is 0.1 to 0.5, and the uppermost layer mainly holds signals in the high frequency region of 5 MHz or more, and the low frequency of 0.75 MHz or its vicinity. This is a magnetic recording method in which magnetic recording is performed so that the signals in the region are mainly held by the lower layer, and the output of signals in the high frequency region and the low frequency region and the running durability are improved.
IV 発明の具体的構成 以下、本発明の具体的構成について詳細に説明する。IV Specific Structure of the Invention Hereinafter, the specific structure of the present invention will be described in detail.
本発明における磁性層としての強磁性金属薄膜層は少な
くとも2層からなる多層構造を有するものである。そし
て、本発明に用いる強磁性金属薄膜層は、Coを主成分と
し、これにOを含み、さらに必要に応じNiおよび/また
はCrが含有される組成を有する。The ferromagnetic metal thin film layer as the magnetic layer in the present invention has a multi-layer structure including at least two layers. The ferromagnetic metal thin film layer used in the present invention has a composition containing Co as a main component, containing O, and optionally containing Ni and / or Cr.
すなわち、好ましい態様においては、Co単独からなって
もよく、CoとNiからなってもよい。Niが含まれる場合、
Co/Niの重量比は1.5以上であることが好ましい。That is, in a preferred embodiment, it may consist of Co alone or Co and Ni. If Ni is included,
The weight ratio of Co / Ni is preferably 1.5 or more.
さらに、強磁性金属薄膜層中には、Crが含有されていて
もよい。Further, Cr may be contained in the ferromagnetic metal thin film layer.
このような場合、Cr/CoあるいはCr/(Co+Ni)の重量比
は0.1以下、特に0.001〜0.1、より好ましくは0.005〜0.
05であることが好ましい。In such a case, the weight ratio of Cr / Co or Cr / (Co + Ni) is 0.1 or less, particularly 0.001 to 0.1, and more preferably 0.005 to 0.
05 is preferable.
さらに、本発明の強磁性金属薄膜中にはOが含有される
ものである。Further, the ferromagnetic metal thin film of the present invention contains O.
強磁性金属薄膜中の層全体の平均酸素量は、原子比、特
にO/(CoまたはCo+Ni)の原子比で、最上層における平
均酸素量C1 *は0.1〜0.5、好ましくは0.1〜0.4である。The average oxygen content of the whole layer in the ferromagnetic metal thin film is an atomic ratio, particularly the atomic ratio of O / (Co or Co + Ni), and the average oxygen content C 1 * in the uppermost layer is 0.1 to 0.5, preferably 0.1 to 0.4. is there.
平均酸素量がC1 *が、0.1未満では耐食性、走行性、磁
性層のクラック、ケズレ等の点で不十分であり、0.5を
こえると、表面酸化物層が増大し、ヘッドとのスペーシ
ングによる出力の低下等の問題を生じる。Average oxygen content C 1 * is the corrosion resistance is less than 0.1, the running resistance, crack magnetic layer is insufficient in terms of such scraping, exceeds 0.5, the surface oxide layer is increased, the spacing between the head This causes a problem such as a reduction in output.
そして、最下層のプラスチックフィルムとの界面近傍で
の酸素濃度C2、特にO/(CoまたはCo+Ni)原子比を、最
上層のプラスチックフィルムと反対側の表面近傍での酸
素濃度C1、特にO/(CoまたはCo+Ni)原子比で除した値
C2/C1は0.3以下、より好ましくは0.15以下であることが
好ましい。The oxygen concentration C 2 near the interface with the lowermost plastic film, in particular the O / (Co or Co + Ni) atomic ratio, is the oxygen concentration C 1 near the surface opposite to the uppermost plastic film, especially O 2. / (Co or Co + Ni) atomic ratio divided by
C 2 / C 1 is preferably 0.3 or less, more preferably 0.15 or less.
この場合、これら酸素濃度は、強磁性金属薄膜をAr等が
イオンミリングないしイオンエッチングしながら、オー
ジェ分光分析、SIMS(2次イオン質量分析)等を行な
い、測定することができる。In this case, these oxygen concentrations can be measured by performing Auger spectroscopic analysis, SIMS (secondary ion mass spectrometry) or the like while Ar or the like ion milling or ion etching the ferromagnetic metal thin film.
すなわち、イオンエッチングを行ないながらO,Co,Ni等
をカウントし、その膜厚方向のプロファイルを比較す
る。That is, while performing ion etching, O, Co, Ni, etc. are counted and the profiles in the film thickness direction are compared.
そして、プラスチックフィルムと反対側の強磁性金属薄
膜表面のO/(CoまたはCo+Ni)をC1とする。また、最下
層については、プラスチックフィルムまでエッチングが
行なわれ、Cがカウントされる直前のO/(CoまたはCo+
Ni)をC2とする。The O / (Co or Co + Ni) on the surface of the ferromagnetic metal thin film opposite to the plastic film is C 1 . As for the bottom layer, the plastic film is etched until the O / (Co or Co +
Ni) is C 2 .
イオンエッチングおよびオージェ分光分析ないしSIMSの
測定法は常法に従えばよい。Ion etching, Auger spectroscopic analysis, and SIMS may be measured by conventional methods.
このように最上層表面の酸素濃度を相対的に高くするこ
とにより、保磁力Hcが高くなり、また最下層の酸素濃度
を相対的に低くすることにより、最大残留磁束φrおよ
び角形比SQが高くなり、電磁変換特性がきわめて良好な
磁性層となる。By increasing the oxygen concentration on the surface of the uppermost layer in this way, the coercive force Hc is increased, and by decreasing the oxygen concentration on the lowermost layer, the maximum residual magnetic flux φr and the squareness ratio S Q are increased. As a result, the magnetic layer becomes high and the electromagnetic conversion characteristics are extremely good.
なお、表面近傍のO/(CoまたはCo+Ni)C1は、0.2〜0.
6、好ましくは0.3〜0.6である。The O / (Co or Co + Ni) C 1 near the surface is 0.2 to 0.
6, preferably 0.3 to 0.6.
従って、フィルム界面近傍のO/(CoまたはCo+Ni)C2は
0.06〜0.21、好ましくは0.09〜0.18である。Therefore, O / (Co or Co + Ni) C 2 near the film interface is
It is 0.06 to 0.21, preferably 0.09 to 0.18.
さらに、最上層の層全体でのO/(CoまたはCo+Ni)C1 *
は0.1〜0.5、より好ましくは0.1〜0.4であることが好ま
しい。また、最下層の層全体でのO/(CoまたはCo+Ni)
C2 *は0.5以下、より好ましくは0.3以下であることが好
ましい。In addition, O / (Co or Co + Ni) C 1 * in the entire top layer
Is preferably 0.1 to 0.5, more preferably 0.1 to 0.4. In addition, O / (Co or Co + Ni) in the entire bottom layer
C 2 * is preferably 0.5 or less, more preferably 0.3 or less.
このとき、電磁変換特性、耐食性、走行耐久性、磁性膜
強度等はきわめて良好となる。At this time, electromagnetic conversion characteristics, corrosion resistance, running durability, magnetic film strength, etc. are extremely good.
この場合、3層以上の多層構造の場合、それらの各層の
層全体でのO/(CoまたはCo+Ni)は、一般に、0.5以
下、好ましくは0.3以下とする。In this case, in the case of a multi-layered structure having three or more layers, the O / (Co or Co + Ni) of each layer is generally 0.5 or less, preferably 0.3 or less.
なお、この場合、強磁性金属薄膜層の各層の表面では、
酸素が強磁性金属(Co,Ni)と酸化物を形成している。In this case, on the surface of each layer of the ferromagnetic metal thin film layer,
Oxygen forms an oxide with the ferromagnetic metals (Co, Ni).
すなわち、各層の表面から100Å〜2000Å、より好まし
くは500〜1000Åの厚さの範囲には、オージェ分光分析
により、酸化物を示すピークが認められるものである。That is, a peak showing an oxide is recognized by Auger spectroscopic analysis in the thickness range of 100Å to 2000Å, more preferably 500 to 1000Å from the surface of each layer.
本発明では、強磁性金属薄膜層表面とフィルム側界面と
の酸素濃度を規制するものであり、そのとき、本発明所
定の効果が実現するものである。In the present invention, the oxygen concentration between the surface of the ferromagnetic metal thin film layer and the film side interface is regulated, and at that time, the effect prescribed by the present invention is realized.
このため、強磁性金属薄膜の膜厚方向の酸素濃度プロフ
ァイルについては問わない。すなわち、膜厚方向にて酸
素が漸減してもよく、あるいは酸素分布が折線状をなし
たり、途中の分布、例えば多層膜界面にピークが存在し
てもよい。Therefore, the oxygen concentration profile in the film thickness direction of the ferromagnetic metal thin film does not matter. That is, oxygen may gradually decrease in the film thickness direction, or the oxygen distribution may have a polygonal shape, or a peak may exist in the distribution in the middle, for example, at the interface of the multilayer film.
なお、通常、強磁性金属薄膜は2層とすればよいが、必
要に応じ3層以上、特に3〜5層とすることもできる。It should be noted that the ferromagnetic metal thin film usually has two layers, but if necessary, it may have three or more layers, particularly 3 to 5 layers.
なお、このような強磁性金属薄膜中には、さらに他の微
量成分、特に遷移元素、例えばFe,Mn,V,Zr,Nb,Ta,Ti,Z
n,Mo,W,Cu等が含まれていてもよい。In such a ferromagnetic metal thin film, other trace components, especially transition elements such as Fe, Mn, V, Zr, Nb, Ta, Ti, Z
It may contain n, Mo, W, Cu or the like.
このような強磁性金属薄膜層は、好ましい態様におい
て、上記したCoを主成分とする柱状結晶粒の集合体から
なる。In a preferred embodiment, such a ferromagnetic metal thin film layer is composed of an aggregate of columnar crystal grains containing Co as the main component.
この場合、強磁性金属薄膜層の厚さは、総計で0.05〜0.
5μm、好ましくは0.07〜0.3μmとされる。In this case, the total thickness of the ferromagnetic metal thin film layer is 0.05 to 0.
The thickness is 5 μm, preferably 0.07 to 0.3 μm.
そして、このような強磁性金属薄膜層の各層の厚さの比
は特に制限はないが、例えば2層構成の場合、上層と下
層の厚さの比は好ましくは0.1〜10程度が好ましい。The thickness ratio of each layer of such a ferromagnetic metal thin film layer is not particularly limited, but in the case of a two-layer structure, for example, the thickness ratio of the upper layer and the lower layer is preferably about 0.1 to 10.
そして、柱状の結晶粒は、各層の厚さ方向のほぼ全域に
亘る長さをもち、その長手方向が基体の主面の法線に対
して傾斜する角度は特に制限はない。そして、3層以上
の構成における中間に位置する各層では、柱状結晶粒の
基体主面法線に対する傾斜角度は、通常、最上層と最下
層における傾斜角度域内にあればよく、特に制限はな
い。The columnar crystal grains have a length extending over almost the entire area in the thickness direction of each layer, and the angle at which the longitudinal direction is inclined with respect to the normal to the main surface of the substrate is not particularly limited. In each of the intermediate layers in the structure of three or more layers, the tilt angle of the columnar crystal grains with respect to the normal to the main surface of the substrate is usually within the tilt angle range between the uppermost layer and the lowermost layer, and there is no particular limitation.
そして、この場合、相隣接する各磁性層の結晶粒の基体
主面法線に対する傾斜の向きは、媒体の長さ方向で同方
向であってよいが、好ましくは相対向する向きであるこ
とが好ましい。In this case, the directions of inclination of the crystal grains of the magnetic layers adjacent to each other with respect to the normal to the main surface of the substrate may be the same in the longitudinal direction of the medium, but are preferably opposite to each other. preferable.
このような、結晶粒の傾斜の向きを、2層構成を例とし
て模式的に例示すると第1図および第2図のようにな
る。Such a tilt direction of the crystal grains is schematically illustrated in FIGS. 1 and 2 by taking a two-layer structure as an example.
第1図および第2図において、磁気記録媒体1は、基体
2上に強磁性金属薄膜下層部3および強磁性金属薄膜上
層部4とを有する。そして、強磁性金属薄膜下層部3内
の下層結晶粒5の傾斜の向き、強磁性金属薄膜上層部4
内の上層結晶粒6の傾斜の向きは、第1図では媒体の長
さ方向aで相対向する向きであり、第2図では媒体の長
さ方向aで同方向である。In FIGS. 1 and 2, a magnetic recording medium 1 has a ferromagnetic metal thin film lower layer portion 3 and a ferromagnetic metal thin film upper layer portion 4 on a substrate 2. Then, the tilt direction of the lower layer crystal grains 5 in the ferromagnetic metal thin film lower layer portion 3, the ferromagnetic metal thin film upper layer portion 4
The upper layer crystal grains 6 in the inside are inclined in opposite directions in the longitudinal direction a of the medium in FIG. 1, and in the longitudinal direction a of the medium in FIG.
本発明では、第1図あるいは第2図のいずれの結晶粒傾
斜を有するものであってよいが、好ましくは、第1図に
示される結晶粒傾斜を有するものが好ましい。In the present invention, the crystal grain gradient shown in FIG. 1 or 2 may be used, but the crystal grain gradient shown in FIG. 1 is preferable.
このように、強磁性金属薄膜層が少なくとも2層以上の
層からなる多層構造を有することにより、柱状結晶粒の
長さが小さいものとなるため、強磁性金属薄膜層の膜強
度が向上する。As described above, since the ferromagnetic metal thin film layer has a multi-layered structure including at least two layers, the length of the columnar crystal grains is small, and thus the film strength of the ferromagnetic metal thin film layer is improved.
また、最上層の酸素濃度を、最下層の酸素濃度よりも、
前述のように相対的に高くすることにより、例えば比較
的浅い磁界を有し、中心周波数が5MHz程度の比較的高周
波数の信号は、最下層に比べ、相対的に保磁力Hcの高い
最上層側で有効に保持され、きわめて良好な分解能を有
するものとなる。In addition, the oxygen concentration of the uppermost layer, than the oxygen concentration of the lowermost layer,
By making it relatively high as described above, for example, a signal having a relatively shallow magnetic field and a relatively high frequency with a center frequency of about 5 MHz is generated in the uppermost layer having a relatively higher coercive force Hc than the lowermost layer. It is effectively held on the side and has a very good resolution.
また、例えば比較的深い磁界を有する中心周波数0.75MH
z程度の信号は、最大残留磁束φr、角形比が最上層に
比べ相対的に高い最下層側で有効に保持され、きわめて
良好な電磁変換特性を有するものとなる。Also, for example, a center frequency of 0.75 MH having a relatively deep magnetic field
A signal of about z is effectively held on the lowermost layer side where the maximum residual magnetic flux φr and the squareness ratio are relatively higher than that of the uppermost layer, and has extremely good electromagnetic conversion characteristics.
また、さらに、最上層の酸素濃度を高くすることによ
り、耐摩耗に優れたCo,Ni等の酸化物が最上層に形成さ
れるため、多層構造との相乗効果により、強磁性金属薄
膜層の膜強度がより高いものとなる。Further, by increasing the oxygen concentration in the uppermost layer, oxides such as Co and Ni, which have excellent wear resistance, are formed in the uppermost layer. The film strength is higher.
本発明の磁気記録媒体に用いられる基体の材質として
は、非磁性プラスチックであれば特に制限はないが、通
常は、ポリエチレンテレフタレート、ポリエチレン2,6
−ナフタレート等のポリエステル、ポリアミド、ポリイ
ミド、ポリフェニレンサルファイド、ポリサルフォン、
全芳香族ポリエステル、ポリエーテルエーテルケトン、
ポリエーテルサルフォン、ポリエーテルイミド等を用い
る。また、その形状、寸法、厚さには制限はなく、用途
に応じたものとすればよい。The material of the substrate used in the magnetic recording medium of the present invention is not particularly limited as long as it is a non-magnetic plastic, but usually polyethylene terephthalate, polyethylene 2,6
-Polyester such as naphthalate, polyamide, polyimide, polyphenylene sulfide, polysulfone,
Wholly aromatic polyester, polyetheretherketone,
Polyether sulfone, polyether imide, etc. are used. Further, the shape, size, and thickness are not limited, and may be selected depending on the application.
このようなプラスチックフィルムの磁性層が設けられて
いない他方の面上には公知の種々の裏地層を設層するこ
とが好ましい。It is preferable to form various known backing layers on the other surface of the plastic film on which the magnetic layer is not provided.
裏地層の材質については特に制限はないが、特に顔料と
放射線硬化型樹脂とを含有するものが好ましい。裏地層
の膜厚は、0.05〜1.5μm、より好ましくは0.07〜1.0μ
mとされる。The material of the backing layer is not particularly limited, but a material containing a pigment and a radiation curable resin is particularly preferable. The thickness of the lining layer is 0.05 to 1.5 μm, more preferably 0.07 to 1.0 μm
m.
この膜厚が1.5μmをこえると、走行によって、磁性層
のクラックや磁性面ケズレが生じる。また、ヘッド摩耗
量が増大する。そして、ドロップアウトが増大する。ま
た膜厚が0.05μm未満となると、走行安定性が低下し、
ヘッドタッチ不良が生じ、出力低下やエンベロープ不良
が生じる。If this film thickness exceeds 1.5 μm, cracking of the magnetic layer and magnetic surface deviation occur due to running. Further, the amount of head wear increases. And dropout increases. If the film thickness is less than 0.05 μm, running stability will decrease,
Head touch failure occurs, resulting in output drop and envelope failure.
本発明の磁気記録媒体の表面には、微細な突起が所定の
密度で設けられてもよい。Fine protrusions may be provided at a predetermined density on the surface of the magnetic recording medium of the present invention.
微細な突起は、30〜300Å、より好ましくは50〜250Åの
高さを有するものである。The fine protrusions have a height of 30 to 300Å, more preferably 50 to 250Å.
すなわち、本発明の突起は、光学顕微鏡で観察でき、か
つ触針型表面粗さ計で測定できるものではなく、走査型
電子顕微鏡にて観察できる程度のものである。That is, the protrusions of the present invention can be observed with an optical microscope and can be observed with a scanning electron microscope, not with a stylus type surface roughness meter.
突起高さが300Åをこえ、光学顕微鏡にて観察できるも
のとなると、電磁変換特性の劣化と、走行安定性の低下
をもたらす。If the projection height exceeds 300Å and can be observed with an optical microscope, electromagnetic conversion characteristics will deteriorate and running stability will decrease.
また、50Å未満となると、物性の向上の実効がない。Also, if it is less than 50Å, the improvement of physical properties is not effective.
そして、その密度は1mm2あたり平均105個以上、より好
ましくは105〜109個、特に106〜108個である。And, the density is 10 5 or more per 1 mm 2 on average, more preferably 10 5 to 10 9 , and especially 10 6 to 10 8 .
突起密度が105個/mm2未満となると、ノイズが増大し、
スチル特性が低下する等物性の低下をきたし、実用に耐
えない。When the protrusion density is less than 10 5 pieces / mm 2 , noise increases,
The physical properties are deteriorated, such as the deterioration of the still characteristics, and it cannot be put to practical use.
また、109個/mm2をこえると、物性上の効果が少なくな
ってしまう。On the other hand, if it exceeds 10 9 pieces / mm 2 , the effect on the physical properties will be reduced.
なお、突起径は、一般に200〜1000Å程度とする。The diameter of the protrusion is generally about 200 to 1000Å.
このような突起を設けるには、通常、基板上に微粒子を
配設すればよい。微粒子径は、30〜1000Åとすればよ
く、これにより微粒子径に対応した微細突起が形成され
る。In order to provide such protrusions, it is usually sufficient to dispose fine particles on the substrate. The diameter of the fine particles may be 30 to 1000Å, whereby fine protrusions corresponding to the diameter of the fine particles are formed.
用いる微粒子としては、通常コロイド粒子として知られ
ているものであって、例えばSiO2(コロイダルシリ
カ)、Al2O3(アルミナゾル)、MgO、TiO2、ZnO、Fe
2O3、ジルコニア、CdO、NiO、CaWO4、CaCO3、BaCO3、Co
Co3、BaTiO3、Ti(チタンブラック)、Au、Ag、Cu、N
i、Fe、各種ヒドロゾルや、樹脂粒子等が使用可能であ
る。The fine particles used are those generally known as colloidal particles, for example, SiO 2 (colloidal silica), Al 2 O 3 (alumina sol), MgO, TiO 2 , ZnO, Fe.
2 O 3 , zirconia, CdO, NiO, CaWO 4 , CaCO 3 , BaCO 3 , Co
Co 3 , BaTiO 3 , Ti (titanium black), Au, Ag, Cu, N
i, Fe, various hydrosols, resin particles and the like can be used.
この場合、特に無機物質を用いるのが好ましい。In this case, it is particularly preferable to use an inorganic substance.
このような微粒子は、各種溶媒を用いて塗布液とし、こ
れを基板上に塗布、乾燥してもよく、あるいは塗布液中
に各種水性エマルジョン等の樹脂分を添加したものを塗
布、乾燥してもよい。Such fine particles may be used as a coating solution using various solvents, which may be coated on a substrate and dried, or a coating solution to which a resin component such as various aqueous emulsions is added may be coated and dried. Good.
なお、場合によっては、これら塗布液を基板上に配設す
るのではなく、磁性薄膜層上にトップコート層として配
設することもできる。In some cases, the coating liquid may be provided as a top coat layer on the magnetic thin film layer instead of being provided on the substrate.
また、樹脂分を用いる場合、これら微粒子にもとづく微
細突起に重畳してゆるやかな突起を設けることもできる
が、通常はこのようにする必要はない。Further, when a resin component is used, it is possible to provide a gentle protrusion by superposing on the fine protrusion based on these fine particles, but it is not usually necessary to do so.
もし必要であるならば、強磁性金属薄膜層の最上層と最
下層との間に非磁性金属薄膜層を介在させてもよい。If necessary, a non-magnetic metal thin film layer may be interposed between the uppermost layer and the lowermost layer of the ferromagnetic metal thin film layer.
本発明において、磁性層の形成は、いわゆる斜め蒸着法
によって形成されることが好ましい。In the present invention, the magnetic layer is preferably formed by a so-called oblique vapor deposition method.
この場合、基体法線に対する蒸着物質の最小入射角は、
特に制限はない。In this case, the minimum incident angle of the vapor deposition material with respect to the substrate normal is
There is no particular limitation.
また、磁性層は一工程で2層以上を連続して設層しても
よいが、通常は、各層毎に蒸着工程に流して設層するこ
とが好ましい。Further, the magnetic layer may be formed by continuously forming two or more layers in one step, but normally, it is preferable to form each layer by flowing it into the vapor deposition step.
このように、磁性層の設層を各層毎に分けることによ
り、前述のように、基体法線に対する磁性柱状結晶粒の
傾斜の向きが相隣接する各層間で、媒体の長さ方向で相
対向する向きとなる。In this way, by dividing the layers of the magnetic layer into layers, as described above, the inclination directions of the magnetic columnar crystal grains with respect to the substrate normal line are opposed to each other in the medium length direction between the adjacent layers. It becomes the direction to do.
このような磁性層構成とすることにより、電磁変換特性
は極めて良好となる。With such a magnetic layer structure, the electromagnetic conversion characteristics become extremely good.
なお、蒸着雰囲気は、通常、アルゴン、ヘリウム、真空
等の不活性雰囲気に、酸素ガスを含む雰囲気とし、10-5
〜100Pa程度の圧力とし、また、蒸着距離、基体搬送方
向、キャンやマスクの構造、配置等は公知の条件と同様
にすればよい。The vapor deposition atmosphere is usually an atmosphere containing oxygen gas in an inert atmosphere such as argon, helium, or vacuum, and 10 -5
And to 10 0 Pa pressure of about, also deposition distance, the substrate transport direction, the structure of the can and the mask, arrangement and the like may be the same as known conditions.
そして、酸素雰囲気での蒸着により、表面に金属酸化物
の被膜が形成される。なお、金属酸化物が形成される酸
素ガス分圧は、実験から容易に求めることができる。Then, a metal oxide film is formed on the surface by vapor deposition in an oxygen atmosphere. The oxygen gas partial pressure at which the metal oxide is formed can be easily obtained from experiments.
なお、表面に金属酸化物の被膜を形成するには、各種酸
化処理が可能である。Various oxidation treatments can be performed to form a metal oxide film on the surface.
適用できる酸化処理としては下記のようなものがある。The following oxidation treatments can be applied.
1)乾式処理 a.エネルギー粒子処理 特願昭58−76640号に記載したように、蒸着の後期に、
イオンガンや中性ガンにより酸素をエネルギー粒子とし
て磁性層にさしむけるもの。1) Dry treatment a. Energetic particle treatment As described in Japanese Patent Application No. 58-76640, in the latter stage of vapor deposition,
An ion gun or neutral gun that causes oxygen to enter the magnetic layer as energetic particles.
b.グロー処理 O2,H2O,O2+H2O等とAr,N2等の不活性ガスとを用い、こ
れをグロー放電してプラズマを生じさせ、このプラズマ
中に磁性膜表面をさらすもの。b. Glow treatment O 2 , H 2 O, O 2 + H 2 O, etc. and an inert gas such as Ar, N 2 etc. are used, and this is glow-discharged to generate plasma. What to expose.
c.酸化性ガス オゾン、加熱水蒸気等の酸化性ガスを吹き付けるもの。c. Oxidizing gas A gas that blows an oxidizing gas such as ozone or heated steam.
d.加熱処理 加熱によって酸化を行なうもの。加熱温度は60〜150℃
程度。d. Heat treatment A substance that is oxidized by heating. Heating temperature is 60-150 ℃
degree.
2)湿式処理 a.陽極酸化 b.アルカリ処理、 c.酸処理 クロム酸塩処理、過マンガン酸塩処理、リン酸塩処理等
を用いる。2) Wet treatment a. Anodizing b. Alkali treatment, c. Acid treatment Chromate treatment, permanganate treatment, phosphate treatment, etc. are used.
d.酸化剤処理 H2O2等を用いる。d. Oxidant treatment H 2 O 2 or the like is used.
本発明の有機物のトップコート層は、放射線硬化型化合
物、すなわち放射線硬化型ポリマー、モノマー、オリゴ
マーの1種以上と、酸化防止剤と、さらに必要に応じ潤
滑剤とを含有し、かつ所定の密度と大きさの突起を有す
る強磁性金属薄膜上に設層されたものである。The organic topcoat layer of the present invention contains a radiation-curable compound, that is, at least one of a radiation-curable polymer, a monomer and an oligomer, an antioxidant and, if necessary, a lubricant, and has a predetermined density. It is provided on a ferromagnetic metal thin film having protrusions of
さらに、本発明の媒体は、磁性層上に表面層を設層し
て、走行性をより一層向上することもできる。Further, in the medium of the present invention, a surface layer may be provided on the magnetic layer to further improve the running property.
表面層としては、公知の種々のものが適用でき、例え
ば、各種高分子物質被膜、ないしはこれに潤滑剤、酸化
防止剤、界面活性剤、無機微粒子等を含有させたもの
や、各種潤滑剤の塗膜ないし気相被着膜等がある。As the surface layer, various known ones can be applied, for example, various polymer material coatings, or those containing a lubricant, an antioxidant, a surfactant, inorganic fine particles or the like, or various lubricants. There is a coating film or a vapor deposition film.
表面層の厚さは、5〜300Å程度とする。The thickness of the surface layer is about 5 to 300 liters.
V 発明の具体的作用効果 本発明によれば、磁性層が2層以上の層構成をなすこと
により、磁性柱状結晶粒の長さが小さいものとなるため
磁性層の膜強度が向上する。このため、走行安定性がき
わめて高く、また、走行による磁性層のクラックや磁性
面のケズレの発生がきわめて少なく、ヘッド摩耗量もき
わめて少ないものとなる。V. Specific Actions and Effects of the Invention According to the present invention, the magnetic layer has a layered structure of two or more layers, so that the length of the magnetic columnar crystal grains is small, so that the film strength of the magnetic layer is improved. Therefore, running stability is extremely high, cracks in the magnetic layer and scratches on the magnetic surface due to running are extremely small, and the amount of head wear is also extremely small.
さらに、最下層の酸素濃度C2と最上層の酸素濃度C1との
比C2/C1が0.3以下C1が0.2〜0.6、全層平均の酸素濃度が
0.1〜0.5であることにより、最上層では保磁力Hcが相対
的に高くなり、比較的浅い磁界を有する中心周波数が5M
Hz程度以上の信号を有効に保持し、かつ分解能が良好な
ものとなる。また、最下層では、最大残留磁束φr、角
形比が高くなり、比較的深い磁界を有する中心周波数0.
75MHz程度の信号を有効に保持するものである。Further, the ratio C 2 / C 1 of the oxygen concentration C 2 of the lowermost layer and the oxygen concentration C 1 of the uppermost layer is 0.3 or less, C 1 is 0.2 to 0.6, and the average oxygen concentration of all layers is
Since it is 0.1 to 0.5, the coercive force Hc becomes relatively high in the uppermost layer, and the center frequency having a relatively shallow magnetic field is 5M.
It effectively holds signals above about Hz and has good resolution. In the lowermost layer, the maximum residual magnetic flux φr and the squareness ratio are high, and the center frequency is 0.
It effectively holds a signal of about 75 MHz.
VI 発明の具体的実施例 以下、本発明の具体的実施例を示し、本発明をさらに詳
細に説明する。VI Specific Examples of the Invention Hereinafter, the present invention will be described in more detail by showing specific examples of the invention.
実施例1 下記表1に示す厚さのポリエステル(PET)フィルムを
円筒状、冷却キャンの周面に沿わせて移動させ、O2+Ar
(容積比1:1)を毎分800ccの早さで流し真空度を1.0×1
0-4Torrとしたチャンバー内で、Co80、Ni20(重量比)
の合金を溶融し入射角を表1に示す入射角として、斜め
蒸着により第1図に示されるCo−Ni−Oの2層薄膜を形
成した。Example 1 A polyester (PET) film having a thickness shown in Table 1 below was moved along the circumferential surface of a cylindrical cooling can to remove O 2 + Ar.
(Volume ratio 1: 1) is flown at a speed of 800cc per minute and the degree of vacuum is 1.0 x 1
Co80, Ni20 (weight ratio) in a chamber set to 0 -4 Torr
The alloy was melted and the incident angle was set to the incident angle shown in Table 1, and the Co-Ni-O two-layer thin film shown in FIG. 1 was formed by oblique vapor deposition.
また、比較として、入射角30〜90゜の部分のみ斜め蒸着
し膜厚0.15μmのCo−Ni−Oの単層薄膜を形成した。For comparison, only a portion having an incident angle of 30 to 90 ° was obliquely vapor-deposited to form a 0.15 μm thick Co—Ni—O single-layer thin film.
酸素は下層と上層との界面およびベースと反対側の表面
に多く偏在していた。また、ベースと反対側の表面はほ
ぼ酸化物のみで覆われていた。A large amount of oxygen was unevenly distributed on the interface between the lower layer and the upper layer and on the surface opposite to the base. Also, the surface opposite to the base was almost entirely covered with oxide.
Hc=1000 Oe。膜中の平均酸素量はCoとNiに対する原子
比 で40%であった。Hc = 1000 Oe. The average oxygen content in the film is the atomic ratio to Co and Ni. Was 40%.
表1にはArにてイオンエッチングを行ないながら、オー
ジェ分光分析を行なって得たO/(CoまたはCo+Ni)原子
比のうち、C1(表面)、C1 *(上層平均)、C2(ベース
界面)、C2 *(下層平均)C*(全層平均)が併記され
る。In Table 1, among the O / (Co or Co + Ni) atomic ratios obtained by performing Auger spectroscopic analysis while performing ion etching with Ar, C 1 (surface), C 1 * (upper layer average), and C 2 ( Base interface), C 2 * (lower layer average) and C * (all layer average) are also shown.
なお、磁性層薄膜上には、ミリスチン酸イソプロピルの
表面層を膜厚25Åにて設層し、また、基体裏面側には0.
5μm厚にてカーボン、シリカおよび放射線硬化樹脂を
含む裏地層を設層した。On the magnetic layer thin film, a surface layer of isopropyl myristate was formed with a film thickness of 25 Å, and on the back side of the substrate was 0.
A backing layer containing carbon, silica and a radiation curable resin was formed to a thickness of 5 μm.
このようにして形成した下記表1に示す各サンプルにつ
き、下記の測定を行なった。なお、媒体走行方向と、下
層の基体法線に対する傾きの方向とを同一方向とした。The following measurements were carried out for each of the samples formed in this way and shown in Table 1 below. The medium running direction and the direction of inclination with respect to the lower layer normal to the substrate were the same direction.
1)耐久性 温度20℃、湿度60%RHの条件下、および温度40℃、湿度
80%RHの条件下で連続走行テストを行ない、出力が2dB
低下するまでのパス回数を求めた。1) Durability Temperature 20 ℃, Humidity 60% RH, Temperature 40 ℃, Humidity
Performed a continuous running test under the condition of 80% RH, output is 2dB
The number of passes until it decreased was calculated.
使用デッキ:SONY A−300 ヘッド:スパッタ センダスト 2)電磁変換特性 中心周波数0.75MHzおよび5MHzの出力を測定し、サンプ
ルNo.8の出力を0dBとした時の値を求めた。Deck used: SONY A-300 Head: Spatter Sendust 2) Electromagnetic conversion characteristics The outputs at center frequencies 0.75MHz and 5MHz were measured, and the value when the output of sample No. 8 was set to 0dB was obtained.
使用デッキ:SONY A−300 ヘッド:スパッタ センダスト モード:SPモード 表1に示される結果より本発明の効果は明らかである。Use deck: SONY A-300 Head: Spatter Sendust mode: SP mode From the results shown in Table 1, the effect of the present invention is clear.
第1図は、本発明の磁気記録媒体の1実施例の媒体方向
に平行な断面の模式図である。 第2図は、本発明の磁気記録媒体の他の実施例の媒体方
向に平行な断面の模式図である。 符号の説明 1……磁気記録媒体、 2……基体、 3……強磁性金属薄膜下層部、 4……強磁性金属薄膜上層部、 5……下層結晶粒、 6……上層結晶粒、 矢印a……媒体長さ方向FIG. 1 is a schematic view of a cross section parallel to the medium direction of one embodiment of the magnetic recording medium of the present invention. FIG. 2 is a schematic view of a cross section parallel to the medium direction of another embodiment of the magnetic recording medium of the present invention. DESCRIPTION OF SYMBOLS 1 ... Magnetic recording medium, 2 ... Substrate, 3 ... Ferromagnetic metal thin film lower layer part, 4 ... Ferromagnetic metal thin film upper layer part, 5 ... Lower layer crystal grain, 6 ... Upper layer crystal grain, arrow a: Medium length direction
Claims (1)
る厚さ0.05〜0.5μmの強磁性金属薄膜層を有し、 この強磁性金属薄膜層が2以上の層からなる多層構造を
有し、 その最下層のプラスチックフィルム側界面近傍の酸素濃
度C2を最上層のプラスチックフィルムと反対側表面近傍
の酸素濃度C1で除した値C2/C1が0.3以下であり、 前記C1が0.2〜0.6であり、 最上層および全強磁性金属薄膜層の平均酸素濃度がそれ
ぞれ0.1〜0.5であり、 5MHz以上の高周波領域の信号を主として前記最上層が保
持し、0.75MHzないしその近傍の低周波領域の信号を主
として下層が保持するように磁気記録を行い、 前記高周波領域および低周波領域の信号の出力と走行耐
久性とを向上させる磁気記録方法。1. A ferromagnetic metal thin film layer containing Co as a main component and having a thickness of 0.05 to 0.5 μm on a plastic film, and the ferromagnetic metal thin film layer has a multi-layer structure composed of two or more layers, its lowermost plastic film side near the interface the oxygen concentration C 2 was divided by the oxygen concentration C 1 of the opposite surfaces near the top layer of plastic film value C 2 / C 1 is 0.3 or less, wherein C 1 is 0.2 The average oxygen concentration of the uppermost layer and the total ferromagnetic metal thin film layer is 0.1 to 0.5, and the uppermost layer mainly holds signals in the high frequency region of 5 MHz or more, and the low frequency of 0.75 MHz or its vicinity. A magnetic recording method in which magnetic recording is performed so that a signal in a region is retained mainly by a lower layer, and output of signals in the high frequency region and low frequency region and running durability are improved.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61155593A JPH0760482B2 (en) | 1986-07-02 | 1986-07-02 | Magnetic recording method |
| US07/069,228 US4770924A (en) | 1986-07-02 | 1987-07-02 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61155593A JPH0760482B2 (en) | 1986-07-02 | 1986-07-02 | Magnetic recording method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6310315A JPS6310315A (en) | 1988-01-16 |
| JPH0760482B2 true JPH0760482B2 (en) | 1995-06-28 |
Family
ID=15609421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61155593A Expired - Fee Related JPH0760482B2 (en) | 1986-07-02 | 1986-07-02 | Magnetic recording method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0760482B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01205714A (en) * | 1988-02-10 | 1989-08-18 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
| JPH01205716A (en) * | 1988-02-12 | 1989-08-18 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
| JPH05101365A (en) * | 1991-03-22 | 1993-04-23 | Tdk Corp | Perpendicular magnetic recording medium and production thereof |
| JPH05135344A (en) * | 1991-05-17 | 1993-06-01 | Tdk Corp | Magnetic recording medium |
| JPH06150289A (en) * | 1992-11-12 | 1994-05-31 | Matsushita Electric Ind Co Ltd | Magnetic recording medium and its manufacture |
| JPH08129736A (en) * | 1994-11-01 | 1996-05-21 | Matsushita Electric Ind Co Ltd | Magnetic recording media |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5798133A (en) * | 1980-12-05 | 1982-06-18 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
| JPS61145722A (en) * | 1984-12-20 | 1986-07-03 | Hitachi Maxell Ltd | Magnetic recording medium |
-
1986
- 1986-07-02 JP JP61155593A patent/JPH0760482B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6310315A (en) | 1988-01-16 |
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| LAPS | Cancellation because of no payment of annual fees |