JPH0766484B2 - Magnetic recording method - Google Patents
Magnetic recording methodInfo
- Publication number
- JPH0766484B2 JPH0766484B2 JP61159332A JP15933286A JPH0766484B2 JP H0766484 B2 JPH0766484 B2 JP H0766484B2 JP 61159332 A JP61159332 A JP 61159332A JP 15933286 A JP15933286 A JP 15933286A JP H0766484 B2 JPH0766484 B2 JP H0766484B2
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- JP
- Japan
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- layer
- substrate
- thin film
- thickness
- metal thin
- Prior art date
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- 239000002184 metal Substances 0.000 claims description 48
- 230000005294 ferromagnetic effect Effects 0.000 claims description 42
- 229910052760 oxygen Inorganic materials 0.000 claims description 42
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- 239000000758 substrate Substances 0.000 claims description 40
- 239000001301 oxygen Substances 0.000 claims description 39
- 239000002985 plastic film Substances 0.000 claims description 9
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- 239000000463 material Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
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- 239000013078 crystal Substances 0.000 description 20
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- 238000011282 treatment Methods 0.000 description 11
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
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- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- -1 oxides such as Co Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 229910000702 sendust Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910018553 Ni—O Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
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- 229910052742 iron Inorganic materials 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- HIQIXEFWDLTDED-UHFFFAOYSA-N 4-hydroxy-1-piperidin-4-ylpyrrolidin-2-one Chemical compound O=C1CC(O)CN1C1CCNCC1 HIQIXEFWDLTDED-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000008131 herbal destillate Substances 0.000 description 1
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- 125000005487 naphthalate group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
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- 239000000049 pigment Substances 0.000 description 1
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- 229920002647 polyamide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
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- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Magnetic Record Carriers (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
Description
【発明の詳細な説明】 I発明の背景 技術分野 本発明は、磁気記録媒体、特に金属薄膜型の磁気記録媒
体を用いる磁気記録方法に関する。BACKGROUND OF THE INVENTION 1. Technical Field The present invention relates to a magnetic recording medium, and more particularly to a magnetic recording method using a metal thin film type magnetic recording medium.
先行技術とその問題点 ビデオ用、オーディオ用等の磁気記録媒体として、テー
プ化して巻回したときのコンパクト性から、金属薄膜型
の磁性層を有するものの開発が活発行われている。2. Description of the Related Art Prior Art and Problems There are active developments of magnetic recording media for video, audio, etc., which have a metal thin film type magnetic layer because of their compactness when formed into a tape and wound.
このような金属薄膜型の媒体の磁性層としては、特性
上、基体法線に対し所定の傾斜角にて蒸着を行う、いわ
ゆる斜め蒸着法によって形成したCo系、Co−Ni系等から
なる蒸着膜が好適である。As a magnetic layer of such a metal thin film type medium, characteristically, vapor deposition is performed by a so-called oblique vapor deposition method in which vapor deposition is performed at a predetermined inclination angle with respect to the normal to the substrate, and vapor deposition of Co-based, Co-Ni-based, etc. Membranes are preferred.
このような媒体では、小型化、長時間記録等のため、従
来より、例えば10μm以下のフィルムを用いた媒体の研
究が進められているが、走行性、耐久性、強磁性金属薄
膜の強度等の点で問題が生じる。For such media, research has been made on media such as 10 μm or less for miniaturization and long-time recording. However, runnability, durability, strength of ferromagnetic metal thin film, etc. There is a problem with.
そこで、これらの不都合を解消するため、フィルム裏面
に金属薄膜補強層を設ける旨の提案(特開昭56−16939
号、同58−97131号、同57−78627号、同57−37737号)
あるいはフィルム表面に微粒子を配設してヘッドタッ
チ、走行面で改良をなす旨の提案(特開昭58−68227
号、同58−100221号)等がなされている。Therefore, in order to eliminate these disadvantages, it is proposed to provide a metal thin film reinforcing layer on the back surface of the film (JP-A-56-16939).
No. 58-97131, No. 57-78627, No. 57-37737)
Alternatively, it is proposed that fine particles are provided on the film surface to improve the head touch and the running surface (Japanese Patent Laid-Open No. 58-68227).
No. 58-100221).
また、耐久性や、電磁変換特性を向上させるために、強
磁性金属薄膜層を2層以上の多層構成とする旨の提案も
種々行なわれている(特開昭54−141608号、特公昭56−
26892号、特開昭57−130228号等)。とりわけ、5MHz程
度以上の高周波出力の低下は大きな問題である。Further, in order to improve durability and electromagnetic conversion characteristics, various proposals have been made that the ferromagnetic metal thin film layer has a multilayer structure of two or more layers (Japanese Patent Laid-Open No. 141608/54, Japanese Patent Publication No. 56/56). −
26892, JP-A-57-130228, etc.). In particular, the reduction of high frequency output above 5MHz is a big problem.
しかし、現状では、10μm以下のフィルムを用いた媒体
において、走行性、耐久性、強磁性金属薄膜強度が良好
で、かつ電磁変換特性の面でも不都合の生じない技術は
未だ実現していない。However, at present, in a medium using a film having a thickness of 10 μm or less, a technique that has good running property, durability, ferromagnetic metal thin film strength, and causes no inconvenience in terms of electromagnetic conversion characteristics has not yet been realized.
II発明の目的 本発明の目的は、フィルム厚8μm以下のフィルム支持
体を用い媒体の走行性が良好で、走行による磁性層のク
ラックやケズレが少なく、さらにヘッド摩耗量およびド
ロップアウトが少なく、電磁変換特性の良好な金属薄膜
型の磁気記録媒体を用い、高周波出力を大巾に向上でき
る磁気記録方法を提供することにある。II Object of the Invention The object of the present invention is to use a film support having a film thickness of 8 μm or less, to achieve good running properties of the medium, to reduce cracks and scratches in the magnetic layer due to running, and to reduce head wear and dropout to reduce electromagnetic interference. It is an object of the present invention to provide a magnetic recording method capable of significantly improving high frequency output by using a metal thin film type magnetic recording medium having good conversion characteristics.
IV発明の開示 このような目的は、下記の本発明によって達成される。
すなわち、本発明は、厚さ8μm以下のプラスチックフ
ィルム基体上に、 Coを主成分とする強磁性金属薄膜層を有し、 この強磁性金属薄膜層が2層以上の層からなる多層構造
を有し、 強磁性金属薄膜層被着時の基体法線に対する被着物質の
最小入射角が、基体側の最下層設層時は50°以下、基体
と反対側の最上層設層時は20°〜90°であり、 最下層の基体側界面近傍の酸素濃度C2を最上層の基体と
反対側表面近傍の酸素濃度C1で除した値C2/C1が0.3以
下であり、最上層に隣接する層の最上層との界面近傍で
の酸素濃度C3を最上層の基体と反対側表面近傍での酸素
濃度C1で除した値C3/C1が0.2〜3.0であり、 最上層の厚さが、最下層の厚さよりも小さい磁気記録媒
体を用い、 5MHz以上の高周波領域の信号を主として前記上層が保持
し、0.75MHzないしその近傍の低周波領域の信号を主と
して前記下層が保持するように磁気記録を行い、 前記信号出力を向上させる磁気記録方法である。IV Disclosure of the Invention Such an object is achieved by the present invention described below.
That is, the present invention has a ferromagnetic metal thin film layer containing Co as a main component on a plastic film substrate having a thickness of 8 μm or less, and this ferromagnetic metal thin film layer has a multi-layer structure composed of two or more layers. However, the minimum incident angle of the deposited material with respect to the normal to the substrate when depositing the ferromagnetic metal thin film layer is 50 ° or less when the lowermost layer is formed on the substrate side, and 20 ° when the uppermost layer is formed on the opposite side of the substrate. Is 90 °, and the value C 2 / C 1 obtained by dividing the oxygen concentration C 2 in the vicinity of the substrate side interface of the lowermost layer by the oxygen concentration C 1 in the vicinity of the surface of the uppermost layer substrate is 0.3 or less. the value C 3 / C 1 obtained by dividing the oxygen concentration C 3 in the vicinity of the interface between the top layer of the adjacent layers in the oxygen concentration C 1 at the opposite side surface near the top layer of the substrate to have a 0.2 to 3.0, most A magnetic recording medium having an upper layer thickness smaller than that of the lowermost layer is used, and the upper layer mainly holds signals in a high frequency region of 5 MHz or more, and 0.75 MHz or more. Mainly with magnetic recording to the lower layer holds the signal of the low frequency region near the a magnetic recording method of improving the signal output.
V発明の具体的構成 以下、本発明の具体的構成について詳細に説明する。V Specific Structure of the Invention Hereinafter, a specific structure of the present invention will be described in detail.
本発明における磁性層としての強磁性金属薄膜層は少な
くとも2層からなる多層構造を有するものである。そし
て、本発明に用いる強磁性金属薄膜層は、Coを主成分と
し、これにOを含み、さらに必要に応じNiおよび/また
はCrが含有される組成を有する。The ferromagnetic metal thin film layer as the magnetic layer in the present invention has a multi-layer structure including at least two layers. The ferromagnetic metal thin film layer used in the present invention has a composition containing Co as a main component, containing O, and optionally containing Ni and / or Cr.
すなわち、好ましい態様においては、Co単独からなって
もよく、CoとNiからなってもよい。Niが含まれる場合、
Co/Niの重量比は、1.5以上であることが好ましい。That is, in a preferred embodiment, it may consist of Co alone or Co and Ni. If Ni is included,
The Co / Ni weight ratio is preferably 1.5 or more.
さらに、強磁性金属薄膜層中には、Crが含有されていて
もよい。Further, Cr may be contained in the ferromagnetic metal thin film layer.
このような場合、Cr/CoあるいはCr/(Co+Ni)の重量比
は、0.1以下、特に0.001〜0.1、より好ましくは、0.005
〜0.05であることが好ましい。In such a case, the weight ratio of Cr / Co or Cr / (Co + Ni) is 0.1 or less, particularly 0.001 to 0.1, and more preferably 0.005.
It is preferably ˜0.05.
さらに、本発明の強磁性金属薄膜中にはOが含有される
ものである。Further, the ferromagnetic metal thin film of the present invention contains O.
強磁性金属薄膜中の層全体の平均酸素量は、原子比、特
にO/(CoまたはCo+Ni)の原子比で、最上層における平
均酸素量は0.1〜0.5程度、好ましくは0.1〜0.4程度であ
る。The average oxygen content of the whole layer in the ferromagnetic metal thin film is an atomic ratio, especially the atomic ratio of O / (Co or Co + Ni), and the average oxygen content in the uppermost layer is about 0.1 to 0.5, preferably about 0.1 to 0.4. .
平均酸素量が、0.1未満では耐食性、走行性、磁性層の
クラック、ケズレ等の点で不十分であり、0.5をこえる
と、表面酸化物層が増大しヘッドとのスペーシングによ
る出力の低下等の問題を生じる。If the average oxygen content is less than 0.1, it is insufficient in terms of corrosion resistance, running properties, cracks in the magnetic layer, scratches, etc.If it exceeds 0.5, the surface oxide layer increases and the output decreases due to spacing with the head. Cause problems.
そして、最下層のプラスチックフィルムとの界面近傍の
酸素濃度C2、特にO/(CoまたはCo+Ni)原子比を、最上
層のプラスチックフィルムと反対側の表面近傍での酸素
濃度C1特に、O/(CoまたはCo+Ni)原子比で除した値は
0.3以下、より好ましくは0.15以下であることが好まし
い。The oxygen concentration C 2 near the interface with the lowermost plastic film, in particular the O / (Co or Co + Ni) atomic ratio, is the oxygen concentration C 1 near the surface opposite to the uppermost plastic film, especially O / The value divided by (Co or Co + Ni) atomic ratio is
It is preferably 0.3 or less, more preferably 0.15 or less.
この場合、これら酸素濃度は、強磁性金属薄膜をAr等が
イオンミリングないしイオンエッチングしながら、オー
ジエ分光分析、SIMS(2次イオン質量分析)等を行い、
測定することができる。In this case, these oxygen concentrations are determined by Auger spectroscopic analysis, SIMS (secondary ion mass spectrometry), etc. while Ar or the like ion-milling or ion-etching the ferromagnetic metal thin film.
Can be measured.
すなわち、イオンエッチングを行ないながらO、Co、Ni
等をカウントし、その膜厚方向のプロファイルを比較す
る。That is, while performing ion etching, O, Co, Ni
Etc. are counted and the profiles in the film thickness direction are compared.
そして、プラスチックフィルムと反対側の強磁性金属薄
膜表面のO/(CoまたはCo+Ni)をC1とする。また、最下
層については、プラスチックフィルムまでエッチングが
行なわれ、Cがカウントされる直前のO/(CoまたはCo+
Ni)をC2とする。The O / (Co or Co + Ni) on the surface of the ferromagnetic metal thin film opposite to the plastic film is C 1 . As for the bottom layer, the plastic film is etched until the O / (Co or Co +
Ni) is C 2 .
イオンエッチングおよびオージエ分光分析ないしSIMSの
測定法は常法に従えばよい。Ion etching, Auger spectroscopic analysis, and SIMS may be measured by conventional methods.
このように最上層表面の酸素濃度を相対的に高くするこ
とにより、保磁力Hcが高くなり、また、最下層の酸素濃
度を相対的に低くすることにより、最大残留磁束Φrお
よび角形比SQが高くなり、電磁変換特性がきわめて良好
な磁性層となる。By increasing the oxygen concentration on the surface of the uppermost layer in this way, the coercive force Hc is increased, and by decreasing the oxygen concentration on the lowermost layer, the maximum residual magnetic flux Φr and the squareness ratio SQ are increased. As a result, the magnetic layer becomes high and the electromagnetic conversion characteristics are extremely good.
また、本発明の磁性層としての強磁性金属薄膜層では、
最上層と隣接する層の最上層との界面近傍の酸素濃度
C3、特にO/(CoまたはCo+Ni)原子比を最上層のプラス
チックフィルムと反対側の表面近傍での酸素濃度C1、特
にO/(CoまたはCo+Ni)原子比で除した値C3/C1は、0.
2〜3.0より好ましくは0.2〜2.0である。Further, in the ferromagnetic metal thin film layer as the magnetic layer of the present invention,
Oxygen concentration near the interface between the uppermost layer and the adjacent uppermost layer
C 3, in particular O / (Co or Co + Ni) oxygen concentration C 1 of the atomic ratio near the surface opposite the top layer of plastic film, the value C 3 / C, in particular divided by O / (Co or Co + Ni) atomic ratio 1 is 0.
It is preferably 0.2 to 2.0, more preferably 2 to 3.0.
この場合、プラスチックフィルムと反対側の強磁性金属
薄膜表面のO/(CoまたはCo+Ni)C1は前述と同様に測定
することができる。また、最上層に隣接する層の最上層
との界面近傍での酸素濃度C3については、最上層の膜厚
に対応するエッチング時のカウントからO/(CoまたはCo
+Ni)を算出し、これをC3とすればよい。ただ、各層に
おいては、通常の成膜条件下ではそのフィルム基体反対
面で酸素の濃度が最大となる。このため、通常は、イオ
ンエッチングを行ないながらOをカウントとしたとき、
膜内での極大値をC3とすればよい。In this case, O / (Co or Co + Ni) C 1 on the surface of the ferromagnetic metal thin film opposite to the plastic film can be measured in the same manner as described above. The oxygen concentration C 3 near the interface between the uppermost layer and the uppermost layer is O / (Co or Co or Co from the count during etching corresponding to the thickness of the uppermost layer.
+ Ni) and calculate this as C 3 . However, in each layer, the oxygen concentration is maximum on the surface opposite to the film substrate under normal film forming conditions. Therefore, normally, when O is counted while performing ion etching,
The maximum value in the film may be C 3 .
このように最上層表面の酸素濃度C1を相対的に高くする
ことにより、保磁力Hcが高くなり、また最上層の表面よ
り下の最上層に隣接する層との近傍までの部分の酸素濃
度を上記C1より相対的に低くすることにより、最大残留
磁束Φrおよび角形比SQが高くなり、電磁変換特性がき
わめて良好な磁性層となる。したがって、中心周波数5M
Hz程度の比較的磁界の浅い信号は、最上層で有効に保持
されるものとなる。In this way, by relatively increasing the oxygen concentration C 1 on the surface of the uppermost layer, the coercive force Hc increases, and the oxygen concentration of the portion below the surface of the uppermost layer and in the vicinity of the layer adjacent to the uppermost layer is also increased. Is relatively lower than the above C 1 , the maximum residual magnetic flux Φr and the squareness ratio SQ are increased, and the magnetic layer has extremely good electromagnetic conversion characteristics. Therefore, the center frequency is 5M
A signal with a relatively shallow magnetic field of about Hz is effectively retained in the uppermost layer.
また、最上層に隣接する層の最上層との界面近傍での酸
素濃度C3を、上記C1との関係が前述のようにC3/C1が0.
1〜3.0となる範囲において、相対的に高くすることによ
り、この部分での保磁力Hcが高くなり、また、最上層に
隣接する層の最上層との界面近傍から下の部分の酸素濃
度を上記C3より相対的に低くすることにより、最大残留
磁束Φrおよび角形比SQが高くなり、電磁変換特性がき
わめて良好な磁性層となる。したがって、中心周波数0.
7MHz程度の比較的磁界の深い信号は、最上層の次の層以
下で有効に保持されるものとなる。Further, the oxygen concentration C 3 in the vicinity of the interface between the uppermost layer adjacent to the uppermost layer, the relationship between the C 1 is is C 3 / C 1, as described above zero.
In the range of 1 to 3.0, by relatively increasing the coercive force Hc in this portion, the oxygen concentration in the portion below the interface with the uppermost layer of the layer adjacent to the uppermost layer and below is also increased. By making it relatively lower than C 3 , the maximum residual magnetic flux Φr and the squareness ratio SQ become high, and a magnetic layer having extremely good electromagnetic conversion characteristics is obtained. Therefore, the center frequency is 0.
A signal with a comparatively deep magnetic field of about 7 MHz is effectively retained below the layer next to the uppermost layer.
そして、上記C1とC3との関係が前述のようにC3/C1が0.
1〜3.0となるときに、磁性層の電磁変換特性、耐食性等
が最もバランスの良い優れた磁性層となる。And, as described above, the relationship between C 1 and C 3 is C 3 / C 1 is 0.
When it is 1 to 3.0, it becomes an excellent magnetic layer having the best balance of electromagnetic conversion characteristics and corrosion resistance of the magnetic layer.
なお、表面近傍のO/(CoまたはCo+Ni)C1は、一般に0.
2〜0.7好ましくは0.3〜0.6である。The O / (Co or Co + Ni) C 1 near the surface is generally 0.
2 to 0.7, preferably 0.3 to 0.6.
従って、フィルム界面近傍のO/(CoまたはCo+Ni)C2は
0.06〜0.21、好ましくは0.09〜0.18である。Therefore, O / (Co or Co + Ni) C 2 near the film interface is
It is 0.06 to 0.21, preferably 0.09 to 0.18.
また、最上層に隣接する層の最上層近傍のO/(Coまたは
Co+Ni)C3は0.07〜0.6好ましくは0.1〜0.5である。Also, O / (Co or
Co + Ni) C 3 is 0.07 to 0.6 is preferably 0.1 to 0.5.
さらに、最上層の層全体でのO/(CoまたはCo+Ni)C1 *
は0.1〜0.5、より好ましくは0.1〜0.4であることが好ま
しい。また、最下層の層全体でのO/(CoまたはCo+Ni)
C2 *は、0.5以下、より好ましくは0.3以下であることが
好ましい。Furthermore, O / (Co or Co + Ni) C 1 * in the entire top layer
Is preferably 0.1 to 0.5, more preferably 0.1 to 0.4. In addition, O / (Co or Co + Ni) in the entire bottom layer
C 2 * is preferably 0.5 or less, more preferably 0.3 or less.
また最上層に隣接する層の層全体でのO/(CoまたはCo+
Ni)は0.5以下、より好ましくは0.3以下であることが好
ましい。In addition, O / (Co or Co + in the entire layer adjacent to the uppermost layer
Ni) is preferably 0.5 or less, more preferably 0.3 or less.
このとき、電磁変換特性、耐食性、走行耐久性、磁性膜
強度等はきわめて良好となる。At this time, electromagnetic conversion characteristics, corrosion resistance, running durability, magnetic film strength, etc. are extremely good.
この場合、3層以上の多層構造の場合、それらの各層の
層全体でのO/(CoまたはCo+Ni)は、一般に、0.5以
下、好ましくは0.3以下とする。In this case, in the case of a multi-layered structure having three or more layers, the O / (Co or Co + Ni) of each layer is generally 0.5 or less, preferably 0.3 or less.
なお、この場合、強磁性金属薄膜層の各層の表面では、
酸素が強磁性金属(Co、Ni)と酸化物を形成している。In this case, on the surface of each layer of the ferromagnetic metal thin film layer,
Oxygen forms an oxide with ferromagnetic metals (Co, Ni).
すなわち、各層の表面から100〜2000Å、より好ましく
は500〜1000Åの厚さの範囲には、オージェ分光分析に
より、酸化物を示すピークが認められるものである。That is, in the range of 100 to 2000 Å, more preferably 500 to 1000 Å thickness from the surface of each layer, a peak showing an oxide is recognized by Auger spectroscopic analysis.
本発明では、強磁性金属薄膜層表面とフィルム側界面と
の酸素濃度を規制するものであり、また、強磁性金属薄
膜層表面と最上層の隣接する層の最上層近傍との酸素濃
度を規制するものであり、そのとき本発明所定の効果が
実現するものである。In the present invention, the oxygen concentration between the ferromagnetic metal thin film layer surface and the film-side interface is regulated, and the oxygen concentration between the ferromagnetic metal thin film layer surface and the uppermost layer adjacent to the uppermost layer is regulated. In that case, the predetermined effects of the present invention are realized.
このため、強磁性金属薄膜の膜厚方向の酸素濃度プロフ
ァイルについては、通常、少なくとも最上層と最上層に
隣接する層との界面に酸素分布のピークが存在するもの
である。Therefore, regarding the oxygen concentration profile in the thickness direction of the ferromagnetic metal thin film, there is usually a peak of oxygen distribution at least at the interface between the uppermost layer and the layer adjacent to the uppermost layer.
なお、通常、強磁性金属薄膜は2層とすればよいが、必
要に応じ3層以上、特に3〜5層とすることもできる。It should be noted that the ferromagnetic metal thin film usually has two layers, but if necessary, it may have three or more layers, particularly 3 to 5 layers.
なお、このような強磁性金属薄膜中には、さらに他の微
量成分、特に遷移元素、例えばFe、Mn、V、Zr、Nb、T
a、Ti、Zn、Mo、W、Cu等が含まれていてもよい。Incidentally, in such a ferromagnetic metal thin film, further other trace components, especially transition elements such as Fe, Mn, V, Zr, Nb, T
It may contain a, Ti, Zn, Mo, W, Cu and the like.
このような強磁性金属薄膜層は、好ましい態様におい
て、上記したCoを主成分とする柱状結晶粒の集合体から
なる。In a preferred embodiment, such a ferromagnetic metal thin film layer is composed of an aggregate of columnar crystal grains containing Co as the main component.
この場合、強磁性金属薄膜層の厚さは、総計で0.05〜0.
5μm、好ましくは0.07〜0.3μmとされる。In this case, the total thickness of the ferromagnetic metal thin film layer is 0.05 to 0.
The thickness is 5 μm, preferably 0.07 to 0.3 μm.
そして、このような強磁性金属薄膜層の各層において、
最上層の厚さは、最下層の厚さよりも小さいものであ
る。And, in each layer of such a ferromagnetic metal thin film layer,
The thickness of the top layer is less than the thickness of the bottom layer.
この場合、最上層の厚さと最下層の厚さとの比は0.2〜
0.9、より好ましくは0.4〜0.9の範囲であることが好ま
しい。In this case, the ratio of the thickness of the top layer to the thickness of the bottom layer is 0.2-
It is preferably 0.9, more preferably 0.4 to 0.9.
そして、3層以上の構成における中間に位置する層の厚
さは、通常、最上層の厚さと最下層の厚さの範囲内にあ
ればよい。The thickness of the intermediate layer in the structure of three or more layers is usually within the range of the thickness of the uppermost layer and the thickness of the lowermost layer.
そして、柱状の結晶粒は各層の厚さ方向のほぼ全域に亘
る長さをもち、その長手方向は、基体の主面の法線に対
する最小角度が最上層では20〜90°、より好ましくは20
〜50°の範囲、最下層では50°以下、より好ましくは0
〜40°の範囲にて傾斜していることが好ましい。Then, the columnar crystal grains have a length extending over substantially the entire region in the thickness direction of each layer, the longitudinal direction, the minimum angle to the normal line of the main surface of the substrate is 20 ~ 90 ° in the uppermost layer, more preferably 20.
In the range of up to 50 °, the lowermost layer is 50 ° or less, more preferably 0
It is preferable to incline in the range of -40 °.
この場合、3層以上の構成における中間に位置する各層
では、柱状結晶粒の基体主面法線に対する傾斜角度は、
通常、最上層と最下層における傾斜角度域内にあればよ
く、特に制限はない。In this case, in each of the intermediate layers in the structure of three or more layers, the tilt angle of the columnar crystal grains with respect to the normal to the main surface of the substrate is
Usually, the uppermost layer and the lowermost layer are not particularly limited as long as they are within the inclination angle range.
そして、この場合、相隣接する各磁性層の結晶粒の基体
主面法線に対する傾斜の向きは、媒体の長さ方向で同方
向であってよいが、好ましくは相対向する向きであるこ
とが好ましい。In this case, the directions of inclination of the crystal grains of the magnetic layers adjacent to each other with respect to the normal to the main surface of the substrate may be the same in the longitudinal direction of the medium, but are preferably opposite to each other. preferable.
このような、結晶粒の傾斜の向きを2層構成を例として
模式的に例示すると第1図および第2図のようになる。FIG. 1 and FIG. 2 schematically show such a tilt direction of the crystal grains by taking a two-layer structure as an example.
第1図および第2図において、磁気記録媒体1は、基体
2上に強磁性金属薄膜下層部3および強磁性金属薄膜上
層部4とを有する。そして、強磁性金属薄膜下層部3内
の下層結晶粒5の傾斜の向き、強磁性金属薄膜上層部4
内の上層結晶粒6の傾斜の向きは、第1図では媒体の長
さ方向aで相対向する向きであり、第2図では媒体の長
さ方向aで同方向ある。In FIGS. 1 and 2, a magnetic recording medium 1 has a ferromagnetic metal thin film lower layer portion 3 and a ferromagnetic metal thin film upper layer portion 4 on a substrate 2. Then, the tilt direction of the lower layer crystal grains 5 in the ferromagnetic metal thin film lower layer portion 3, the ferromagnetic metal thin film upper layer portion 4
The upper layer crystal grains 6 in the inside are inclined in opposite directions in the medium length direction a in FIG. 1, and are in the same direction in the medium length direction a in FIG.
本発明では、第1図あるいは第2図のいずれの結晶粒傾
斜を有するものであってよいが、好ましくは、第1図に
示される結晶粒傾斜を有するものが好ましい。In the present invention, the crystal grain gradient shown in FIG. 1 or 2 may be used, but the crystal grain gradient shown in FIG. 1 is preferable.
なお、酸素は、表面部の柱状の結晶粒の表面に前記のと
おり化合物の形で存在するものである。It should be noted that oxygen is present in the form of a compound on the surface of the columnar crystal grains in the surface portion as described above.
また、強磁性金属薄膜層の酸素の濃度勾配の如何には特
に制限はない。There is no particular limitation on the oxygen concentration gradient of the ferromagnetic metal thin film layer.
また、結晶粒の短径は、50〜500Å程度の長さをもつこ
とが好ましい。Further, the minor axis of the crystal grains preferably has a length of about 50 to 500Å.
このように、強磁性金属薄膜層が多層構成をなすことに
より、柱状結晶粒の長さが小さいものとなるため強磁性
金属薄膜層の膜強度が向上する。As described above, by forming the ferromagnetic metal thin film layer in a multi-layered structure, the length of the columnar crystal grains becomes small, so that the film strength of the ferromagnetic metal thin film layer is improved.
また、層厚が薄い最上層の柱状結晶粒が基体主面法線に
対し20〜90°の傾きを有し、特に50°以上の傾きを有す
るものがあるため、例えば比較的浅い磁界を有する中心
周波数5MHz程度の信号は最上層にて有効に保持され得る
ものとなる。Further, since the columnar crystal grains of the uppermost layer having a small layer thickness have an inclination of 20 to 90 ° with respect to the normal line to the main surface of the substrate, particularly those having an inclination of 50 ° or more, for example, have a relatively shallow magnetic field. A signal having a center frequency of about 5 MHz can be effectively held in the uppermost layer.
また、層厚が厚い最下層の柱状結晶粒が基体主面法線に
対し50°以下の傾きを有し、基体に対し立っている状態
を呈しているため、例えば比較的深い磁界を有する中心
周波数0.75MHz程度の信号は最下層等の最下層域にて有
効に保持され得るものとなる。In addition, since the columnar crystal grains in the lowermost layer with a large layer thickness have an inclination of 50 ° or less with respect to the normal to the main surface of the substrate and stand upright with respect to the substrate, A signal with a frequency of about 0.75 MHz can be effectively held in the lowest layer such as the lowest layer.
また、さらに、前述のように最上層の酸素濃度を高くす
ることにより、耐摩耗性に優れたCo、Ni、等の酸化物が
最上層に形成されるため、多層構造との相乗効果によ
り、強磁性金属薄膜層の膜強度がより高いものとなる。Further, as described above, by increasing the oxygen concentration in the uppermost layer, oxides such as Co, Ni, etc., which have excellent wear resistance, are formed in the uppermost layer, and therefore, due to the synergistic effect with the multilayer structure, The film strength of the ferromagnetic metal thin film layer becomes higher.
本発明の磁気記録媒体に用いられる基体の材質として
は、非磁性プラスチックであれば特に制限はないが、通
常は、ポリエチレンテレフタレート、ポリエチレン2,6
−ナフタレート等のポリエステル、ポリアミド、ポリイ
ミド、ポリフェニレンサルファイド、ポリサルフォン、
全芳香族ポリエステル、ポリエーテルエーテルケトン、
ポリエーテルサルフォン、ポリエーテルイミド等を用い
る。The material of the substrate used in the magnetic recording medium of the present invention is not particularly limited as long as it is a non-magnetic plastic, but usually polyethylene terephthalate, polyethylene 2,6
-Polyester such as naphthalate, polyamide, polyimide, polyphenylene sulfide, polysulfone,
Wholly aromatic polyester, polyetheretherketone,
Polyether sulfone, polyether imide, etc. are used.
また、その厚さは8μm以下、特に5〜7μm程度であ
ることが好ましい。The thickness is preferably 8 μm or less, and particularly preferably about 5 to 7 μm.
この厚さが8μmをこえると媒体の小型化、長時間記録
等の目的は達成されない。また、この厚さがあまり薄く
なりすぎると、磁性層を上述のように多層構造として膜
強度を向上させた効果が相殺され、走行性、出力低下、
ヘッド摩耗等の問題が生じる。If the thickness exceeds 8 μm, the objectives of downsizing the medium, recording for a long time, etc. cannot be achieved. Further, if this thickness is too thin, the effect of improving the film strength by forming the magnetic layer as a multilayer structure as described above is offset, and the running property and the output decrease,
Problems such as head wear occur.
そして、本発明の強磁性金属薄膜層の多層構造化による
電磁変換特性向上の効果は、基体の厚さを薄いものにし
た場合に、より顕著に現われるものである。The effect of improving the electromagnetic conversion characteristics by the multilayer structure of the ferromagnetic metal thin film layer of the present invention is more remarkable when the thickness of the substrate is thin.
例えば、2層構造を例にとれば基体の厚さ10μmにおい
て、強磁性金属薄膜層を従来の単層構造から本発明の2
層構造にすることによる電磁変換特性の向上巾は、0.75
MHzの低周波領域の信号で+6(dB)程度、5MHzの高周
波領域の信号で+6(dB)程度であるが、基体の厚さを
7μmとした場合の向上巾は0.75MHzの低周波領域の信
号で+6(dB)程度で基体厚10μmの場合と同様である
が、5MHzの高周波領域の信号では+7.5(dB)程度まで
増大する。For example, taking a two-layer structure as an example, when the thickness of the substrate is 10 μm, the ferromagnetic metal thin film layer is changed from the conventional single-layer structure to that of the present invention.
The improvement in electromagnetic conversion characteristics due to the layered structure is 0.75
The signal in the low frequency region of MHz is about +6 (dB), and the signal in the high frequency region of 5 MHz is about +6 (dB). However, when the thickness of the substrate is 7 μm, the improvement is 0.75 MHz in the low frequency region. The signal is about +6 (dB), which is similar to the case where the substrate thickness is 10 μm, but it increases to about +7.5 (dB) for a signal in the high frequency region of 5 MHz.
このように、10μm厚の基体に比べ、7μm厚の基体に
おける電磁変換特性の向上が著しいのは、基体厚みを10
μmから7μmにすることにより、基体剛度不足による
ヘッドタッチが急激に悪化し5MHz等の高周波領域におい
て、この影響がより大きく、このような場合に本発明の
効果が発現されるものである。In this way, the improvement in electromagnetic conversion characteristics of the 7 μm-thick substrate is remarkable when compared with the 10 μm-thick substrate.
When the thickness is changed from 7 μm to 7 μm, the head touch abruptly deteriorates due to the lack of rigidity of the substrate, and this effect is greater in a high frequency region such as 5 MHz, and the effect of the present invention is exhibited in such a case.
このようなプラスチックフィルムの磁性層が設けられて
いない他方の面上には公知の種々の裏地層を設層するこ
とが好ましい。It is preferable to form various known backing layers on the other surface of the plastic film on which the magnetic layer is not provided.
裏地層の材質については特に制限はないが、特に顔料と
放射線硬化型樹脂とを含有するものが好ましい。裏地層
の膜厚は、0.05〜1.5μm、より好ましくは0.07〜1.0μ
mとされる。The material of the backing layer is not particularly limited, but a material containing a pigment and a radiation curable resin is particularly preferable. The thickness of the lining layer is 0.05 to 1.5 μm, more preferably 0.07 to 1.0 μm
m.
本発明の磁気記録媒体の表面には、微細な突起が所定の
密度で設けられてもよい。Fine protrusions may be provided at a predetermined density on the surface of the magnetic recording medium of the present invention.
微細な突起は、30〜300Å、より好ましくは50〜250Åの
高さを有するものである。The fine protrusions have a height of 30 to 300Å, more preferably 50 to 250Å.
すなわち、本発明の突起は、光学顕微鏡で観察でき、か
つ触針型表面粗さ計で測定できるものではなく、走査型
電子顕微鏡にて観察できる程度のものである。That is, the protrusions of the present invention can be observed with an optical microscope and can be observed with a scanning electron microscope, not with a stylus type surface roughness meter.
突起高さが300Åをこえ、光学顕微鏡にて観察できるも
のとなると、電磁変換特性の劣化と、走行安定性の低下
をもたらす。If the projection height exceeds 300Å and can be observed with an optical microscope, electromagnetic conversion characteristics will deteriorate and running stability will decrease.
また、50Å未満となると、物性の向上の実効がない。Also, if it is less than 50Å, the improvement of physical properties is not effective.
そして、その密度は1mm2あたり平均105個以上、より好
ましくは105〜109個、特に106〜108個である。And, the density is 10 5 or more per 1 mm 2 on average, more preferably 10 5 to 10 9 , and especially 10 6 to 10 8 .
突起密度が密度が105個/mm2未満となると、ノイズが増
大し、スチル特性が低下する等物性の低下をきたし、実
用に耐えない。When the density of the protrusions is less than 10 5 pieces / mm 2 , noise increases and the physical properties such as the deterioration of the still characteristics are deteriorated, which is not practical.
また、109個/mm2をこえると、物性上の効果が少なくな
ってしまう。On the other hand, if it exceeds 10 9 pieces / mm 2 , the effect on the physical properties will be reduced.
なお、突起径は、一般に200〜1000Å程度とする。The diameter of the protrusion is generally about 200 to 1000Å.
このような突起を設けるには、通常、基体上に微粒子を
配設すればよい。微粒子径は、30〜1000Åすればよく、
これにより微粒子径に対応した微細突起が形成される。In order to provide such protrusions, it is usually sufficient to dispose fine particles on the substrate. The particle size should be 30 to 1000Å,
As a result, fine protrusions corresponding to the particle diameter are formed.
用いる微粒子としては、通常、コロイド粒子として知ら
れているものであって、例えばSiO2(コロイダルシリ
カ)、Al2O3(アルミナゾル)、MgO、TiO2、ZnO、Fe
2O3、ジルコニア、CdO、NiO、CaWo4、CaCO3、BaCO3、Co
CO3、BaTiO3、Ti(チタンブラック)、Au、Ag、Cu、N
i、Fe、各種ヒドロゾルや樹脂粒子等が使用可能であ
る。この場合、特に無機物質を用いるものが好ましい。The fine particles to be used are generally known as colloidal particles, for example, SiO 2 (colloidal silica), Al 2 O 3 (alumina sol), MgO, TiO 2 , ZnO, Fe.
2 O 3 , zirconia, CdO, NiO, CaWo 4 , CaCO 3 , BaCO 3 , Co
CO 3 , BaTiO 3 , Ti (titanium black), Au, Ag, Cu, N
i, Fe, various hydrosols, resin particles and the like can be used. In this case, it is particularly preferable to use an inorganic substance.
このような微粒子は、各種溶媒を用いて塗布液とし、こ
れを基体上に塗布、乾燥してもよく、あるいは塗布液中
に各種水性エマルジョン等の樹脂分を添加したものを塗
布、乾燥してもよい。Such fine particles may be used as a coating solution using various solvents, which may be coated on a substrate and dried, or a coating solution to which a resin component such as various aqueous emulsions is added may be coated and dried. Good.
また、樹脂分を用いる場合、これら微粒子にもとづく微
細突起に重畳してゆるやかな突起を設けることもどきる
が、通常はこのようにする必要はない。Further, when a resin component is used, it is possible to form a gentle protrusion by superposing on the fine protrusions based on these fine particles, but it is not usually necessary to do so.
もし必要であるならば、強磁性金属薄膜層の最上層と最
下層との間に非磁性金属薄膜層を介在させてもよい。If necessary, a non-magnetic metal thin film layer may be interposed between the uppermost layer and the lowermost layer of the ferromagnetic metal thin film layer.
本発明において、磁性層の形成は、いわゆる斜め蒸着法
によって形成されることが好ましい。In the present invention, the magnetic layer is preferably formed by a so-called oblique vapor deposition method.
この場合、基体法線に対する蒸着物質の最小入射角は最
下層設層時においては50°以下、最上層設層時において
は20〜90°、また3層以上の構造の場合における中間に
位置する層の設層時においては20〜50°とすることが好
ましい。In this case, the minimum incident angle of the vapor deposition substance with respect to the normal to the substrate is 50 ° or less when the lowermost layer is formed, 20 to 90 ° when the uppermost layer is formed, and the middle in the case of the structure of three or more layers. When the layers are formed, the angle is preferably 20 to 50 °.
最小入射角がそれぞれ前記の入射角からはずれたものと
なると、電磁変換特性が低下する。If the minimum incident angle deviates from the above-mentioned incident angle, the electromagnetic conversion characteristics deteriorate.
また、磁性層は一工程で2層以上を連続して設層しても
よいが、通常は、各層毎に蒸着工程にながして設層する
ことが好ましい。Further, the magnetic layer may be formed by continuously forming two or more layers in one step, but it is usually preferable to form each layer after the vapor deposition step.
このように磁性層の設層を各層毎に分けることにより、
前述のように基体法線に対する磁性柱状結晶粒の傾斜の
向きが相隣接する各層間で、媒体の長さ方向で相対向す
る向きとなる。In this way, by dividing the layers of the magnetic layer into layers,
As described above, the direction of the inclination of the magnetic columnar crystal grains with respect to the normal to the substrate is such that the adjacent layers are opposed to each other in the longitudinal direction of the medium.
このように磁性層構成とすることにより、電磁変換特性
は極めて良好となる。With such a magnetic layer structure, electromagnetic conversion characteristics become extremely good.
なお、蒸着雰囲気は、通常、アルゴン、ヘリウム、真空
等の不活性雰囲気に、酸素ガスを含む雰囲気とし、10-5
〜100Pa程度の圧力とし、また、蒸着距離、基体搬送方
法、キャンやマスクの構造、配置等は公知の条件と同様
にすればよい。The vapor deposition atmosphere is usually an atmosphere containing oxygen gas in an inert atmosphere such as argon, helium, or vacuum, and 10 -5
And to 10 0 Pa pressure of about, also deposition distance, a substrate transfer method, the structure of the can and the mask, arrangement and the like may be the same as known conditions.
そして、酸素雰囲気での蒸着により、表面に金属酸化物
の被膜が形成される。なお、金属酸化物が形成される酸
素ガス分圧は、実験から容易に求めることができる。Then, a metal oxide film is formed on the surface by vapor deposition in an oxygen atmosphere. The oxygen gas partial pressure at which the metal oxide is formed can be easily obtained from experiments.
なお、表面に金属酸化物の被膜を形成するには、各種酸
化処理が可能である。Various oxidation treatments can be performed to form a metal oxide film on the surface.
適用できる酸化処理としては下記のようなものがある。The following oxidation treatments can be applied.
1)乾式処理 a エネルギー粒子処理 特願昭58−76640号に記載したように、蒸着の後期に、
イオンガンや中性ガンにより酸素をエネルギー粒子とし
て磁性層にさしむけるもの。1) Dry treatment a Energy particle treatment As described in Japanese Patent Application No. 58-76640, in the latter stage of vapor deposition,
An ion gun or neutral gun that causes oxygen to enter the magnetic layer as energetic particles.
b.グロー処理 O2、H2O、O2+H2O等とAr、N2等の不活性ガスとを用い、
これをグロー放電してプラズマを生じさせ、このプラズ
マ中に磁性膜表面をさらすもの。b. Glow treatment O 2 , H 2 O, O 2 + H 2 O etc. and an inert gas such as Ar, N 2 are used,
Glow discharge is performed to generate plasma, and the surface of the magnetic film is exposed to this plasma.
c.酸化性ガス オゾン、加熱水蒸気等の酸化性ガスを吹きつけるもの。c. Oxidizing gas A gas that blows an oxidizing gas such as ozone or heated steam.
d.加熱処理 加熱によって酸化を行なうもの。加熱温度は60〜150℃
程度。d. Heat treatment A substance that is oxidized by heating. Heating temperature is 60-150 ℃
degree.
2)湿式処理 a.陽極酸化 b.アルカリ処理 c.酸処理 クロム酸塩処理、過マンガン酸塩処理、リン酸塩処理等
を用いる。2) Wet treatment a. Anodizing b. Alkali treatment c. Acid treatment Chromate treatment, permanganate treatment, phosphate treatment, etc. are used.
d.酸化剤処理 H2O2等を用いる。d. Oxidant treatment H 2 O 2 or the like is used.
さらに、本発明の媒体は、磁性層上に表面層を設層し
て、走行性をより一層向上することもできる。Further, in the medium of the present invention, a surface layer may be provided on the magnetic layer to further improve the running property.
表面層としては、公知の種々のものが適用でき、例え
ば、各種高分子物質被膜、ないしはこれに潤滑剤、酸化
防止剤、界面活性剤、無機微粒子等を含有させたもの
や、各種潤滑剤の塗膜ないし気相被着膜等がある。As the surface layer, various known ones can be applied, for example, various polymer material coatings, or those containing a lubricant, an antioxidant, a surfactant, inorganic fine particles or the like, or various lubricants. There is a coating film or a vapor deposition film.
表面層の厚さは、5〜300Å程度とする。The thickness of the surface layer is about 5 to 300 liters.
VI発明の具体的作用効果 本発明によれば、厚さ8μm以下の基体を用いるため、
媒体の小型化、長時間記録が可能となる。VI Specific Action and Effect of the Invention According to the present invention, since a substrate having a thickness of 8 μm or less is used,
It is possible to downsize the medium and record for a long time.
また、磁性層が2層以上の層構成をなすことにより、磁
性柱状結晶粒の長さが小さいものとなるため磁性層の膜
強度が向上する。このため走行安定性がきわめて高く、
また、走行による磁性層のクラックや磁性面のケズレの
発生がきわめて少なく、ヘッド摩耗量もきわめて少ない
ものとなる。Further, since the magnetic layer has a layered structure of two or more layers, the length of the magnetic columnar crystal grains becomes small, so that the film strength of the magnetic layer is improved. Therefore, driving stability is extremely high,
Further, the occurrence of cracks in the magnetic layer and scratches on the magnetic surface due to running is extremely small, and the amount of head wear is also extremely small.
また、最上層の柱状結晶粒が基体主面方線に対し20〜90
°の傾きを有し、特に50°以上の傾きを有するものがあ
り、同時に最下層の酸素濃度C2と最上層の酸素濃度C1と
の比C2/C1が0.3以下であり、さらに、最上層に隣接す
る層の最上層界面近傍の酸素濃度C3と最上層の酸素濃度
C1との比が0.1〜0.3であることにより、最上層では保磁
力Hcが相対的に高くなり、比較的浅い磁界を有する中心
周波数が5MHz程度の信号有効に保持し、かつ分解能が良
好なものとなる。In addition, the columnar crystal grains in the uppermost layer are 20 to 90
Some have a slope of 50 ° or more, and in particular have a slope of 50 ° or more, and at the same time, the ratio C 2 / C 1 of the oxygen concentration C 2 of the lowermost layer and the oxygen concentration C 1 of the uppermost layer is 0.3 or less, and , Oxygen concentration C 3 in the vicinity of the uppermost layer interface of the layer adjacent to the uppermost layer and oxygen concentration of the uppermost layer
Since the ratio with C 1 is 0.1 to 0.3, the coercive force Hc becomes relatively high in the uppermost layer, the signal having a relatively shallow magnetic field with a center frequency of about 5 MHz is effectively held, and the resolution is good. Will be things.
さらに、最下層の柱状結晶粒が基体主面方線に対して50
°以下の傾きを有し、基体に対し立っている状態を呈し
ており、また、同時の最下層では最大残留磁束Φr、角
形比が高く、さらに、最上層に隣接する層の最上層界面
近傍では、保磁力Hcのピークが存在しているため、比較
的深い磁界を有する中心周波数0.75MHz程度の信号を有
効に保持するものである。Further, the columnar crystal grains in the bottom layer are 50
It has a slope of less than ° and stands upright with respect to the substrate. Also, the maximum residual magnetic flux Φr and the squareness ratio are high in the lowermost layer at the same time, and in the vicinity of the uppermost layer interface of the layer adjacent to the uppermost layer. Since the coercive force Hc has a peak, it effectively holds a signal having a relatively deep magnetic field and a center frequency of about 0.75 MHz.
そして、上述の効果は、磁性層の最上層の厚さと最下層
の厚さとの比が0.2〜0.9となることにより、より顕著に
発現されるものである。The above-mentioned effect is more remarkably exhibited when the ratio of the thickness of the uppermost layer of the magnetic layer to the thickness of the lowermost layer is 0.2 to 0.9.
VII発明の具体的実施例 以下、本発明の具体的実施例を示し、本発明をさらに詳
細に説明する。VII Specific Examples of the Invention Hereinafter, the present invention will be described in more detail by showing specific examples of the invention.
実施例1 下記表1に示す厚さのポリエステル(PET)フィルムを
円筒状、冷却キャンの周面に沿わせて移動させ、O2+Ar
(容積比1:1)を毎分800ccの速さで流し真空度を1.0×1
0-4Torrとしたチャンバー内で、Co80、Ni20(重量比)
の合金を溶融し、入射角を表1に示す入射角として、斜
め蒸着により第1図に示されるCo−Ni−Oの2層薄膜を
形成した。Example 1 A polyester (PET) film having a thickness shown in Table 1 below was moved along the circumferential surface of a cylindrical cooling can to remove O 2 + Ar.
(Volume ratio 1: 1) flows at a speed of 800cc per minute and the degree of vacuum is 1.0 x 1
Co80, Ni20 (weight ratio) in a chamber set to 0 -4 Torr
Was melted and the incident angle was set to the incident angle shown in Table 1 to form a Co-Ni-O two-layer thin film shown in FIG. 1 by oblique vapor deposition.
また、比較として、入射角30〜90°の部分のみ斜め蒸着
し膜厚0.15μmのCo−Ni−Oの単層薄膜を形成した。As a comparison, only a portion having an incident angle of 30 to 90 ° was obliquely vapor-deposited to form a 0.15 μm thick Co—Ni—O single-layer thin film.
酸素は下層と上層との界面およびベースと反対側の表面
に多く偏在していた。また、ベースと反対側の表面はほ
ぼ酸化物のみで覆われていた。A large amount of oxygen was unevenly distributed on the interface between the lower layer and the upper layer and on the surface opposite to the base. Also, the surface opposite to the base was almost entirely covered with oxide.
Hc=1000Oe。膜中の平均酸素量はCoとNiに対する原子比 で40%であった。Hc = 1000 Oe. The average oxygen content in the film is the atomic ratio to Co and Ni. Was 40%.
表1にはArにてイオンエッチングを行ないながら、オー
ジェ分光分析を行なって得たO/(CoまたはCo+Ni)原子
比のうち、C1(表面)、C1 *(上層平均)、C2(下層の
基体との界面)、C2 *(下層平均)、C3(下層の上層と
の界面近傍)が併記される。Table 1 shows that among the O / (Co or Co + Ni) atomic ratios obtained by performing Auger spectroscopic analysis while performing ion etching with Ar, C 1 (surface), C 1 * (upper layer average), and C 2 ( The interface between the lower layer and the substrate), C 2 * (average of the lower layer), and C 3 (in the vicinity of the interface between the lower layer and the upper layer) are also described.
なお、磁性層薄膜上のは、ミリスチン酸イソプロピルの
表面層を膜厚25Åにて設層し、また、基体裏面側には0.
5μm厚にてカーボン、シリカおよび放射線硬化樹脂を
含む裏地層を設層した。In addition, on the magnetic layer thin film, a surface layer of isopropyl myristate was formed with a film thickness of 25 Å, and 0.
A backing layer containing carbon, silica and a radiation curable resin was formed to a thickness of 5 μm.
このようにして形成した下記表1に示す各サンプルにつ
き、下記の測定を行なった。なお、媒体走行方向と下層
の基体法線に対する傾きの方向とを同一方向とした。The following measurements were carried out for each of the samples formed in this way and shown in Table 1 below. The medium running direction and the direction of the inclination with respect to the base layer normal to the lower layer were the same direction.
1)耐久性 温度20℃、湿度60%RHの条件下および温度40℃、湿度80
%RHの条件下でそれぞれ連続走行テストを行ない、出力
が2dB低下するまでのパス回数を求めた。1) Durability Conditions of temperature 20 ℃, humidity 60% RH and temperature 40 ℃, humidity 80
A continuous running test was performed under each condition of% RH, and the number of passes until the output decreased by 2 dB was obtained.
使用デッキ:SONY A−300 ヘッド :スパッタ センダスト 2)スチル耐久性 温度0℃の条件下で出力が6dB低下するまでの時間を求
めた。Deck used: SONY A-300 Head: Spatter Sendust 2) Still durability The time required for the output to drop by 6 dB at a temperature of 0 ° C was determined.
使用デッキ:SONY A−300(スチル解除機構をはずして使
用した) ヘッド :スパッタセンダスト 3)電磁変換特性 中心周波数0.75MHzおよび5MHzの出力を測定しサンプルN
o.15の出力を0dBとした時の値を求めた。Deck used: SONY A-300 (I used it without the still-release mechanism) Head: Spatter sendust 3) Electromagnetic conversion characteristics Measure the output at center frequencies 0.75MHz and 5MHz and sample N
The value was calculated when the output of o.15 was set to 0 dB.
使用デッキ:SONY A−300 ヘッド:スパッタセンダスト モード:SPモード なお、サンプルNo14(ベース厚7μm,磁性層構成:単
層)の出力に対するサンプルNo.1〜10(ベース厚7μm,
磁性層構成:2層)の出力の向上巾を表1の( )内に記
載した。Deck used: SONY A-300 Head: Sputter sendust mode: SP mode Sample No. 1 to 10 (base thickness 7 μm, base thickness 7 μm, magnetic layer configuration: single layer) output
The improvement range of the output of the magnetic layer structure: 2 layers is shown in () in Table 1.
表1に示される結果より、本発明の効果は明かである。 From the results shown in Table 1, the effect of the present invention is clear.
【図面の簡単な説明】 第1図は本発明の磁気記録媒体の1実施例の媒体方向に
平行な断面の模式図である。 第2図は、本発明の磁気記録媒体の他の実施例の媒体方
向に平行な断面の模式図である。 符号の説明 1……磁気記録媒体 2……基体 3……強磁性金属薄膜下層部 4……強磁性金属薄膜上層部 5……下層結晶粒 6……上層結晶粒 矢印a……媒体長さ方向BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a cross section parallel to the medium direction of one embodiment of a magnetic recording medium of the present invention. FIG. 2 is a schematic view of a cross section parallel to the medium direction of another embodiment of the magnetic recording medium of the present invention. Explanation of symbols 1 ... Magnetic recording medium 2 ... Substrate 3 ... Ferromagnetic metal thin film lower layer 4 ... Ferromagnetic metal thin film upper layer 5 ... Lower crystal grain 6 ... Upper crystal grain Arrow a ... Medium length direction
Claims (4)
体上に、 Coを主成分とする強磁性金属薄膜層を有し、 この強磁性金属薄膜層が2層以上の層からなる多層構造
を有し、 強磁性金属薄膜層被着時の基体法線に対する被着物質の
最小入射角が、基体側の最下層設層時は50°以下、基体
と反対側の最上層設層時は20°〜90°であり、 最下層の基体側界面近傍の酸素濃度C2を最上層の基体と
反対側表面近傍の酸素濃度C1で除した値C2/C1が0.3以
下であり、最上層に隣接する層の最上層との界面近傍で
の酸素濃度C3を最上層の基体と反対側表面近傍での酸素
濃度C1で除した値C3/C1が0.2〜3.0であり、 最上層の厚さが、最下層の厚さよりも小さい磁気記録媒
体を用い、 5MHz以上の高周波領域の信号を主として前記上層が保持
し、0.75MHzないしその近傍の低周波領域の信号を主と
して前記下層が保持するように磁気記録を行い、 前記信号出力を向上させる磁気記録方法。1. A ferromagnetic metal thin film layer containing Co as a main component on a plastic film substrate having a thickness of 8 μm or less, and the ferromagnetic metal thin film layer has a multi-layer structure composed of two or more layers. , The minimum incident angle of the deposited material with respect to the normal to the substrate when depositing the ferromagnetic metal thin film layer is 50 ° or less when the lowermost layer is formed on the substrate side, and 20 ° when the uppermost layer is formed on the opposite side of the substrate. 90 °, and the value C 2 / C 1 obtained by dividing the oxygen concentration C 2 in the vicinity of the substrate side interface of the lowermost layer by the oxygen concentration C 1 in the vicinity of the surface of the uppermost layer substrate is 0.3 or less. the value C 3 / C 1 obtained by dividing the oxygen concentration C 3 in the vicinity of the interface between the top layer with an oxygen concentration C 1 at the opposite side surface near the top layer of the substrate adjacent layers is 0.2 to 3.0, the top layer Magnetic recording medium whose thickness is smaller than the thickness of the bottom layer, the upper layer mainly holds signals in the high frequency range of 5MHz or more, and 0.75MHz or its vicinity. The signal of the low-frequency region, primarily the lower holds with magnetic recording, magnetic recording method of improving the signal output.
請求の範囲第1項に記載の磁気記録方法。2. The magnetic recording method according to claim 1, wherein the ferromagnetic metal thin film layer has a two-layer structure.
ある特許請求の範囲第1項または第2項に記載の磁気記
録方法。3. The magnetic recording method according to claim 1, wherein the thickness of the uppermost layer is 0.2 to 0.9 of the thickness of the lowermost layer.
特許請求の範囲第1項〜第3項のいずれかの磁気記録方
法。4. The magnetic recording method according to any one of claims 1 to 3, wherein the output of a signal in the high frequency region is improved.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61159332A JPH0766484B2 (en) | 1986-07-07 | 1986-07-07 | Magnetic recording method |
| US07/069,228 US4770924A (en) | 1986-07-02 | 1987-07-02 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61159332A JPH0766484B2 (en) | 1986-07-07 | 1986-07-07 | Magnetic recording method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6314320A JPS6314320A (en) | 1988-01-21 |
| JPH0766484B2 true JPH0766484B2 (en) | 1995-07-19 |
Family
ID=15691508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61159332A Expired - Fee Related JPH0766484B2 (en) | 1986-07-02 | 1986-07-07 | Magnetic recording method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766484B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05101365A (en) * | 1991-03-22 | 1993-04-23 | Tdk Corp | Perpendicular magnetic recording medium and production thereof |
| JPH05285354A (en) * | 1992-04-14 | 1993-11-02 | Ishigaki Mech Ind Co | Washing and regenerating method for filter membrane |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS573223A (en) * | 1980-06-03 | 1982-01-08 | Tdk Corp | Magnetic recording medium |
| JPS5798133A (en) * | 1980-12-05 | 1982-06-18 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
| JPS57130228A (en) * | 1981-02-06 | 1982-08-12 | Fuji Photo Film Co Ltd | Magnetic recording medium |
-
1986
- 1986-07-07 JP JP61159332A patent/JPH0766484B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6314320A (en) | 1988-01-21 |
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