JPS643089B2 - - Google Patents
Info
- Publication number
- JPS643089B2 JPS643089B2 JP21290982A JP21290982A JPS643089B2 JP S643089 B2 JPS643089 B2 JP S643089B2 JP 21290982 A JP21290982 A JP 21290982A JP 21290982 A JP21290982 A JP 21290982A JP S643089 B2 JPS643089 B2 JP S643089B2
- Authority
- JP
- Japan
- Prior art keywords
- junction
- resistor
- capacitor
- potential
- pass filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 30
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
Landscapes
- Filters And Equalizers (AREA)
- Networks Using Active Elements (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体集積回路（以下ICと略す）
内に設けられたpn接合容量（Ｐ型半導体とｎ型
半導体との接合部に逆バイアスをかけることによ
つて得られる容量）によるコンデンサと、抵抗に
よつて構成される高域通過ろ波器（以下ハイパス
フイルタと略す）に関するものである。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a semiconductor integrated circuit (hereinafter abbreviated as IC).
A high-pass filter consisting of a capacitor with a pn junction capacitance (a capacitance obtained by applying a reverse bias to the junction between a P-type semiconductor and an N-type semiconductor) and a resistor. (hereinafter abbreviated as high-pass filter).
従来例の構成とその問題点
第１図にIC内に設けられたハイパスフイルタ
の従来回路構成を示す。第１図において、１は
pn接合によつて構成されたコンデンサ、２は抵
抗、３は交流的な接地点、４は信号入力部、５は
信号出力部を示す。また、コンデンサ１の信号入
力側の電位をV1、信号出力側の電位をV2として
いる。第２図は、V1，V2の大小関係に対するpn
接合によるコンデンサ１の具体的形態を示したも
のである。IC内に設けられるコンデンサとして
は、pn接合容量が一般的であり、このpn接合容
量は、npnトランジスタのベース領域（ｐ型半導
体）とエミツタ領域（ｎ型半導体）との間に逆バ
イアス（エミツタ電位＞ベース電位）を加えるこ
とによつて得られる。第２図ａは、信号入力部位
V1が信号出力部電位V2より低い場合を示し、ベ
ースを信号入力側に、エミツタを信号出力側に接
続したものである。第２図ｂは、信号入力部電位
V1が信号出力部電位V2により高い場合で、エミ
ツタを信号入力側に、ベースを信号出力側に接続
したものである。Conventional configuration and its problems Figure 1 shows the conventional circuit configuration of a high-pass filter installed in an IC. In Figure 1, 1 is
A capacitor constituted by a pn junction, 2 a resistor, 3 an AC grounding point, 4 a signal input section, and 5 a signal output section. Further, the potential on the signal input side of the capacitor 1 is V 1 , and the potential on the signal output side is V 2 . Figure 2 shows pn for the magnitude relationship of V 1 and V 2 .
This figure shows a specific form of a capacitor 1 formed by bonding. A pn junction capacitor is generally used as a capacitor provided in an IC. potential>base potential). Figure 2 a shows the signal input part
This shows the case where V 1 is lower than the signal output section potential V 2 , and the base is connected to the signal input side and the emitter is connected to the signal output side. Figure 2b shows the signal input potential
When V 1 is higher than the signal output potential V 2 , the emitter is connected to the signal input side and the base is connected to the signal output side.
この従来の回路構成によるハイパスフイルタに
は、以下に述べるような欠点がある。 The high-pass filter with this conventional circuit configuration has the following drawbacks.
(1) 電源電圧が大きく変化した場合、V1とV2と
の大小関係が逆転してしまう可能性がある。こ
のとき、pn接合容量１には順方向バイアスが
加わり、コンデンサの役割を果たさなくなる。
そのため、ハイパスフイルタとして動作しなく
なる。(1) If the power supply voltage changes significantly, the magnitude relationship between V 1 and V 2 may be reversed. At this time, a forward bias is applied to the pn junction capacitor 1, and it no longer plays the role of a capacitor.
Therefore, it no longer operates as a high-pass filter.
(2) 電源電圧が大きく変化した場合、V1とV2と
の差が大きくなり、pn接合部の逆耐圧電圧を
オーバーしてしまう可能性がある。このとき、
pn接合容量１は破損するか性能悪化するかし
てしまい、ハイパスフイルタとして動作しなく
なる。(2) If the power supply voltage changes significantly, the difference between V 1 and V 2 will increase, potentially exceeding the reverse breakdown voltage of the pn junction. At this time,
The pn junction capacitor 1 will be damaged or its performance will deteriorate, and it will no longer function as a high pass filter.
発明の目的
本発明は、IC内に設けられた従来ハイパスフ
イルタの回路構成において、大きな欠点となつて
いた、電源電圧変化によるpn接合容量部のバイ
アス逆転（逆バイアス→順バイアス）及び逆耐電
圧オーバーの問題を解消し、安定したハイパスフ
イルタ特性を実現しようとするものである。Purpose of the Invention The present invention addresses the problems of bias reversal (reverse bias → forward bias) and reverse breakdown voltage of the pn junction capacitor due to changes in power supply voltage, which have been major drawbacks in the circuit configuration of conventional high-pass filters installed in ICs. This is an attempt to solve the overflow problem and realize stable high-pass filter characteristics.
発明の構成
本発明は信号入力部と第１の交流的接地点との
間に第１のpn接合容量と第１の抵抗を直列に接
続し、この第１のpn接合容量と上記第１の抵抗
との交点と第２の交流的接地点との間に第２の
pn接合容量と第２の抵抗とを直列に接続し、上
記第２のpn接合容量と第２の抵抗との交点を信
号出力部とし、上記二つの交流接地点にそれぞれ
適当な直流電位を印加することを特徴とする高域
通過ろ波器である。Structure of the Invention The present invention connects a first pn junction capacitor and a first resistor in series between a signal input section and a first alternating current grounding point, and connects the first pn junction capacitor and the first resistor in series. A second AC grounding point is connected between the intersection with the resistor and the second AC grounding point.
A pn junction capacitor and a second resistor are connected in series, the intersection of the second pn junction capacitor and the second resistor is used as a signal output part, and an appropriate DC potential is applied to each of the two AC ground points. This is a high-pass filter characterized by the following.
実施例の説明
以下本発明の実施例を図面を参照して説明す
る。第３図に本発明の一実施例におけるハイパス
フイルタの回路構成を示す。第３図において、１
〜５及びV1〜V2は第１図に示された従来回路構
成のものと同じであり同一番号を付して説明す
る。すなわち、１はpn接合によつて構成された
コンデンサ、２は抵抗、３は交流的な接地点、４
は信号入力部、５は信号出力部、V1は信号入力
部４の電位、V2は信号出力部５の電位を示す。
本発明の特徴とするところは、第１のpn接合容
量１と第１の抵抗２とで構成されるハイパスフイ
ルタ（フイルタＡと命名する）の次段にもう１段
第２のpn接合容量６と第２の抵抗７によつて構
成されるハイパスフイルタ（フイルタＢと命名す
る）を接続し、pn接合容量１とpn接合容量６の
交点８（以下中点８と略す）の電位V3を新たに
設定したことである。なお、第３図において９は
第１の交流的接地点３と同じく第２の交流的な接
地点を示す。第４図には、V1，V2，V3の大小関
係に対するpn接合によるコンデンサ１及び６の
具体的形態を示す。第４図ａは、中点８の電位
V3を信号入力部位V1及び信号出力部電位V2より
低く設定した場合を示し、エミツタを信号入力側
及び信号出力側に、ベースを中点側に接続したも
のである。また、第４図ｂは、中点電位V3を信
号入力部電位V1及び信号出力部電位V2より高く
設定した場合を示し、ベースを信号入力側及び信
号出力側に、エミツタを中点側に接続したもので
ある。中点８の電位V3の値は、電源電圧が大き
く変化してもpn接合容量１及び６が順方向バイ
アスになつたり、あるいは逆バイアスが耐圧をオ
ーバーしたりすることのないような値に設定され
る。また、フイルタとしての遮断周波数fcは、低
域の減衰量を特に大きくとりたいときには、フイ
ルタＡ、フイルタＢのfcを両方とも揃える方向で
設定し、高域の挿入損失分を極力小さくしたいと
きには、フイルタＡ，Ｂどちらか一方のfcを希望
する値に設定し、他方のフイルタのfcはずつと低
い値に設定すればよい。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 3 shows a circuit configuration of a high-pass filter in an embodiment of the present invention. In Figure 3, 1
5 and V 1 to V 2 are the same as those in the conventional circuit configuration shown in FIG. 1, and will be described using the same numbers. In other words, 1 is a capacitor composed of a pn junction, 2 is a resistor, 3 is an AC grounding point, and 4 is a capacitor composed of a pn junction.
5 indicates the signal input section, 5 indicates the signal output section, V 1 indicates the potential of the signal input section 4, and V 2 indicates the potential of the signal output section 5.
The feature of the present invention is that a high-pass filter (named filter A) consisting of a first pn junction capacitor 1 and a first resistor 2 is provided with a second pn junction capacitor 6 at the next stage. A high-pass filter (named filter B) consisting of a second resistor 7 and This is a new setting. In FIG. 3, numeral 9 indicates a second AC grounding point, similar to the first AC grounding point 3. FIG. 4 shows specific forms of capacitors 1 and 6 using pn junctions with respect to the magnitude relationship of V 1 , V 2 , and V 3 . Figure 4a shows the potential at midpoint 8.
This shows the case where V 3 is set lower than the signal input part V 1 and the signal output part potential V 2 , and the emitter is connected to the signal input side and the signal output side, and the base is connected to the midpoint side. Fig. 4b shows the case where the midpoint potential V3 is set higher than the signal input part potential V1 and the signal output part potential V2 , with the base on the signal input side and the signal output side, and the emitter at the midpoint. It is connected to the side. The value of the potential V 3 at the midpoint 8 should be such that even if the power supply voltage changes significantly, the pn junction capacitors 1 and 6 will not become forward biased or the reverse bias will not exceed the withstand voltage. Set. In addition, the cutoff frequency fc of the filter should be set so that the fc of both filters A and B are the same if you want to have a particularly large amount of attenuation in the low range, and if you want to minimize the insertion loss in the high range, The fc of either filter A or B may be set to a desired value, and the fc of the other filter may be set to a lower value.
また、上記の方法によつてもまだpn接合容量
部のバイアス逆転及び逆耐電圧オーバーになる可
能性のあるときは、更に次段にpn接合容量と抵
抗によつて構成されるハイパスフイルタを接続
し、その交点の電位を適当な値に設定すればよ
い。 In addition, if there is still a possibility of bias reversal and reverse withstand voltage overflow in the p-n junction capacitor even after using the above method, connect a high-pass filter composed of a p-n junction capacitor and a resistor at the next stage. Then, the potential at the intersection point can be set to an appropriate value.
第５図に具体例を示す。この回路例では、電源
電圧（Vcc）が3.5Vから6Vまで変化しても安定
した特性を有するハイパスフイルタを実現してい
る。V1は電源電圧変化によつて、2.5Vから5Vま
で変化し、V2は2.7Vの定電圧源としている。V3
の値は、V1，V2よりも低くとり、なおかつ、V1
−V3及びV2−V3の値が、pn接合容量の逆耐電圧
をオーバーしないように、2.0V定電圧に設定し
ている。なお、この例で使用したICプロセス
（微細パターンプロセスF095）におけるpn接合容
量部の逆耐電圧は3Vである。 A specific example is shown in FIG. This circuit example realizes a high-pass filter that has stable characteristics even when the power supply voltage (Vcc) changes from 3.5V to 6V. V 1 changes from 2.5V to 5V due to changes in the power supply voltage, and V 2 is a constant voltage source of 2.7V. V3
The value of is set lower than V 1 and V 2 , and V 1
The values of −V 3 and V 2 −V 3 are set to a constant voltage of 2.0V so that they do not exceed the reverse withstand voltage of the pn junction capacitance. Note that the reverse withstand voltage of the pn junction capacitor in the IC process (fine pattern process F095) used in this example is 3V.
発明の効果
以上説明したように、本発明による回路構成を
IC内に設けられるハイパスフイルタに採用すれ
ば、電源電圧が大きく変化しても上記ハイパスフ
イルタのpn接合容量のバイアス逆転（逆バイア
ス→順バイアス）及び逆耐電圧オーバーの問題が
解消され、常に安定したハイパスフイルタを実現
することができる。また、本発明は、乾電池動作
機器などのように電源電圧変化の大きな機器に使
用されるIC、及び低消費電力、高集積化の要望
から微細パターンプロセスを採用し、pn接合容
量部の逆耐電圧の低いICにおいて実施した場合
に、特に大きな効果が得られるものである。Effects of the Invention As explained above, the circuit configuration according to the present invention
If adopted in a high-pass filter installed in an IC, the problems of bias reversal (reverse bias → forward bias) and reverse withstand voltage overflow of the above-mentioned high-pass filter's pn junction capacitance will be resolved, and it will always remain stable even if the power supply voltage changes significantly. A high-pass filter can be realized. In addition, the present invention adopts a fine pattern process for ICs used in devices with large power supply voltage fluctuations such as dry battery-operated devices, and for low power consumption and high integration. Particularly large effects can be obtained when implemented in low voltage ICs.
第１図は、従来例におけるハイパスフイルタの
回路図、第２図は、従来例によるpn接合容量の
具体的形態を示す回路図、第３図は、本発明の一
実施例における高域通過ろ波器の回路図、第４図
は本発明によるpn接合容量の具体的形態を示す
回路図、第５図は本発明の具体例を示す回路図で
ある。
１，６…pn接合によつて構成されたコンデン
サ、２，７…抵抗、３，９…交流的な接地点、４
…信号入力部、５…信号出力部、８…pn接合容
量１，６の交点、V1…信号入力部４の電位、V2
…信号出力部５の電位、V3…交点８の電位。
FIG. 1 is a circuit diagram of a high-pass filter in a conventional example, FIG. 2 is a circuit diagram showing a specific form of a pn junction capacitor in a conventional example, and FIG. 3 is a circuit diagram of a high-pass filter in an embodiment of the present invention. FIG. 4 is a circuit diagram showing a specific form of a pn junction capacitor according to the present invention, and FIG. 5 is a circuit diagram showing a specific example of the present invention. 1, 6... Capacitor configured by pn junction, 2, 7... Resistor, 3, 9... AC grounding point, 4
...Signal input section, 5...Signal output section, 8...Intersection of pn junction capacitances 1 and 6, V 1 ... Potential of signal input section 4, V 2
... Potential of signal output section 5, V 3 ... Potential of intersection 8.
Claims (1)
１のpn接合容量と第１の抵抗を直列に接続し、
この第１のpn接合容量と上記第１の抵抗との交
点と第２の交流的接地点との間に第２のpn接合
容量と第２の抵抗とを直列に接続し、上記第２の
pn接合容量と第２の抵抗との交点を信号出力部
とし、上記二つの交流接地点に、それぞれ適当な
直流電位を印加することを特徴とする高域通過ろ
波器。1. A first pn junction capacitor and a first resistor are connected in series between the signal input section and the first AC grounding point,
A second pn junction capacitor and a second resistor are connected in series between the intersection of the first pn junction capacitor and the first resistor and a second AC ground point, and the second pn junction capacitor and the second resistor are connected in series.
A high-pass filter characterized in that the intersection of the pn junction capacitance and the second resistor is used as a signal output part, and appropriate DC potentials are applied to each of the two AC grounding points.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57212909A JPS59126312A (en) | 1982-12-03 | 1982-12-03 | High-pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57212909A JPS59126312A (en) | 1982-12-03 | 1982-12-03 | High-pass filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59126312A JPS59126312A (en) | 1984-07-20 |
| JPS643089B2 true JPS643089B2 (en) | 1989-01-19 |
Family
ID=16630283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57212909A Granted JPS59126312A (en) | 1982-12-03 | 1982-12-03 | High-pass filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59126312A (en) |
-
1982
- 1982-12-03 JP JP57212909A patent/JPS59126312A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59126312A (en) | 1984-07-20 |
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