JPH023544B2 - - Google Patents
Info
- Publication number
- JPH023544B2 JPH023544B2 JP56138911A JP13891181A JPH023544B2 JP H023544 B2 JPH023544 B2 JP H023544B2 JP 56138911 A JP56138911 A JP 56138911A JP 13891181 A JP13891181 A JP 13891181A JP H023544 B2 JPH023544 B2 JP H023544B2
- Authority
- JP
- Japan
- Prior art keywords
- probing needle
- pellet
- pad
- incomplete
- probing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
本発明は、ウエハー外周部の不完全ペレツトの
バツト表面部を、プロービング針を該パツド表面
部に接触させることにより、プロービング針に附
着したパツド金属を取り除くことのできる物質に
より構成された半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a material that can remove pad metal adhering to a probing needle by bringing a probing needle into contact with the pad surface of an incomplete pellet on the outer periphery of a wafer. The present invention relates to a method of manufacturing a semiconductor device configured by the above.
近年ICのコスト競争は増々激しくなつてきて
おり、その製造工程の合理化無人化のテンポも速
まつてきている。そのICの製造工程の中で、プ
ロービング工程は比較的速く無人化が進められて
きているが、プロービング針とパツド表面との接
触の問題があり、完全な無人化が成されない状況
にある。又本来電気特性的において良ペレツトを
プロービング針とパツド表面との接触不良で、不
要と判定するものもある。更にデイバイスの高速
化に伴い、その判定技術のポイントとしてプロー
ビング針とパツド表面の接触の問題が重要となつ
てきている。これらの問題の全ては、プロービン
グ針先端に附着したパツド金属の酸化物により発
生している。その為、かなり頻繁にプロービング
針先端のクリーニングを、テステイングを中止し
行つているのが現状である。本発明はこのような
問題を一挙に解決でき、土日曜日休み65時間以上
完全無人稼働ができ、かつデイバイスの高速化に
も対処でき、更に測定の安定性が得られるもので
ある。 In recent years, cost competition for ICs has become increasingly intense, and the pace of rationalization and unmanned manufacturing processes is accelerating. In the IC manufacturing process, the probing process has been relatively quickly automated, but there is a problem with the contact between the probing needle and the pad surface, which prevents it from becoming completely automated. In addition, there are cases where pellets with good electrical properties are judged to be unnecessary due to poor contact between the probing needle and the pad surface. Furthermore, as devices become faster, the problem of contact between the probing needle and the pad surface becomes more important as a key point in the determination technology. All of these problems are caused by pad metal oxides that adhere to the tip of the probing needle. For this reason, the current situation is that testing must be stopped to clean the tip of the probing needle quite frequently. The present invention can solve these problems all at once, can operate completely unattended for more than 65 hours on Saturdays and Sundays, can cope with higher speed devices, and can provide measurement stability.
従来の半導体装置は、第１図に示すウエハー外
周部の不完全ペレツト２は内部の完全ペレツト部
１の一部分が欠落した同一パターンを用いてい
た。本発明は該不完全ペレツトのパツド表面部
を、通常な完全ペレツトのパツド金属と異なる物
質、例えばオーバーコート膜（SiO2）、シリコン
（Si）等により構成することにより、プロービン
グ針先端に附着したパツド金属及び該パツド金属
の酸化物を、プロービング針と該パツド金属との
接触により取り除き、以降のプロービング針の接
触を良くすることにある。 In the conventional semiconductor device, the incomplete pellet 2 on the outer periphery of the wafer shown in FIG. 1 has the same pattern as the complete pellet 1 on the inside with a portion missing. In the present invention, the surface of the pad of the incomplete pellet is made of a material different from that of the pad metal of a normal complete pellet, such as an overcoat film (SiO 2 ), silicon (Si), etc. The purpose is to remove pad metal and oxides of the pad metal by bringing the probing needle into contact with the pad metal, thereby improving subsequent contact with the probing needle.
以降に本発明の実施例について説明する。第１
図は、ウエハー全体図であり、斜線部はウエハー
外周部の不完全ペレツト２であり、該不完全ペレ
ツトのパツド部の表面７を第２図に示す如くサブ
ストレートの半導体物質（Si）により形成する。
３はオーバーコート膜、４は配線用金属、５はフ
イールド膜、６はサブストレート基板である。第
３図は完全ペレツトのパツド部の断面構造図を示
す。又第４図に示す如く、不完全ペレツト部のパ
ツド表面部７をオーバーコート膜（SiO2）３に
より形成することも、何等本発明を逸脱するもの
でない。プロービング針先に附着したパツド金属
又はそれらの低級酸化物等は極めて薄い膜であつ
ても電気特性の測定値をシフトさせるので、間欠
的にクリーニングする必要がある。本発明におけ
るクリーニングはプロービング針及びクリーニン
グ針先を酸化物、窒化物、シリコン等と機械的に
接触させ、プロービング針及びプロービング針先
に附着した物質を機械的に除去するものである。
具体的には、パツド穴の底面でプロービング針の
先、パツド穴の側面でプロービング針先の側面を
クリーニングする。本発明のウエハーによりプロ
ービング作業を行つた場合、ウエハーの右サイド
の不完全ペレツトによりプローブカードの左側の
針先がクリーニングされ、左サイドの不完全ペレ
ツトによりプローブカードの右側の針先がクリー
ニングされる。以上の如く、プロービング針の針
先はパツド部表面７で、プロービング針の側面
は、パツド穴の側面又は不完全ペレツトの側面で
研摩される。本発明により、プロービング針先の
接触に関する問題は激減しており、更にプロービ
ング針先の研摩間隔は、従来のものと比較すると
飛躍的に向上しており、夜間の無人稼動及び休日
の無人稼動を可能にし、稼動時間は約５倍とな
り、１台当たりの生産量も約５倍となり、非常に
有効な発明である。 Examples of the present invention will be described below. 1st
The figure is an overall view of the wafer, and the shaded area is an incomplete pellet 2 on the outer periphery of the wafer, and the surface 7 of the pad part of the incomplete pellet is formed of a semiconductor material (Si) as a substrate as shown in FIG. do.
3 is an overcoat film, 4 is a wiring metal, 5 is a field film, and 6 is a substrate substrate. FIG. 3 shows a cross-sectional structural view of a pad portion of a complete pellet. Furthermore, as shown in FIG. 4, forming the pad surface portion 7 of the incomplete pellet portion with an overcoat film (SiO 2 ) 3 does not deviate from the present invention in any way. Pad metals or their lower oxides adhering to the probing needle tip shift the measured values of electrical characteristics even if the film is extremely thin, so it is necessary to clean it intermittently. Cleaning in the present invention involves mechanically bringing the probing needle and cleaning needle tip into contact with oxides, nitrides, silicon, etc., and mechanically removing substances adhering to the probing needle and the probing needle tip.
Specifically, the bottom of the pad hole cleans the tip of the probing needle, and the side surface of the pad hole cleans the side surface of the probing needle tip. When a probing operation is performed using the wafer of the present invention, the incomplete pellet on the right side of the wafer cleans the needle tip on the left side of the probe card, and the incomplete pellet on the left side cleans the needle tip on the right side of the probe card. . As described above, the tip of the probing needle is polished on the pad surface 7, and the side surface of the probing needle is polished on the side surface of the pad hole or the side surface of the incomplete pellet. With the present invention, problems related to the contact of the probing needle tip have been drastically reduced, and the polishing interval of the probing needle tip has been dramatically improved compared to conventional ones, making unattended operation at night and on holidays easier. This is a very effective invention, as it increases the operating time by about 5 times and the production volume per unit by about 5 times.
第１図はウエハーの平面図、第２図、第３図、
第４図は半導体装置のパツド部の断面図であり、
第３図は従来のバツド部、第２図、第４図は本発
明によるバツド部である。図の中の１は完全ペレ
ツト、２は不完全ペレツト、３はオーバーコート
膜、４は配線用金属、５はフイールド膜、６はサ
ブストレート基板、７はパツド表面部、８は不完
全ペレツトの側面である。
Figure 1 is a plan view of the wafer, Figures 2, 3,
FIG. 4 is a cross-sectional view of the pad portion of the semiconductor device.
FIG. 3 shows a conventional butt section, and FIGS. 2 and 4 show a butt section according to the present invention. In the figure, 1 is a complete pellet, 2 is an incomplete pellet, 3 is an overcoat film, 4 is a wiring metal, 5 is a field film, 6 is a substrate substrate, 7 is a pad surface, and 8 is an incomplete pellet. It is a side.
Claims (1)
ウエハーの外周に形成された不完全ペレツトを用
いて前記プロービング針をクリーニングする工程
を組み入れて、前記プロービング針を用いて前記
ウエハーの中央部に形成された完全ペレツトの電
気特性を連続的に測定する半導体装置の製造方法
において、前記完全ペレツトのパツド部に形成さ
れたパツド金属と異なり且つ前記プロービング針
のクリーニング作用を有する物質を前記不完全ペ
レツトの前記パツド部に形成し、前記プロービン
グ針と前記完全ペレツトの前記パツド部に形成し
た前記パツド金属と異なり且つ前記プローピング
針のクリーニング作用を有する前記物質とを接触
させ前記プロービング針から取り除くクリーニン
グ工程を有することを特徴とする半導体装置の製
造方法。1 Incorporating a step of cleaning the probing needle using an incomplete pellet formed on the outer periphery of the wafer in order to clean the tip of the probing needle, and cleaning the complete pellet formed on the center of the wafer using the probing needle. In the manufacturing method of a semiconductor device in which the electrical characteristics of a semiconductor device are continuously measured, a substance different from the pad metal formed on the pad portion of the complete pellet and having a cleaning action for the probing needle is applied to the pad portion of the incomplete pellet. and a cleaning step in which the probing needle is brought into contact with the substance that is different from the pad metal formed on the pad portion of the complete pellet and has a cleaning action for the probing needle, and is removed from the probing needle. A method for manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56138911A JPS5840836A (en) | 1981-09-03 | 1981-09-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56138911A JPS5840836A (en) | 1981-09-03 | 1981-09-03 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5840836A JPS5840836A (en) | 1983-03-09 |
| JPH023544B2 true JPH023544B2 (en) | 1990-01-24 |
Family
ID=15233017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56138911A Granted JPS5840836A (en) | 1981-09-03 | 1981-09-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840836A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758312B2 (en) * | 1987-05-29 | 1995-06-21 | 東京エレクトロン株式会社 | Wafer prober |
| JP4574302B2 (en) * | 2004-09-15 | 2010-11-04 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| JP4615283B2 (en) * | 2004-10-18 | 2011-01-19 | 三菱電機株式会社 | Method for measuring characteristics of semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5324267A (en) * | 1976-08-18 | 1978-03-06 | Nec Corp | Production of beam lead type sem iconductor device |
-
1981
- 1981-09-03 JP JP56138911A patent/JPS5840836A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5840836A (en) | 1983-03-09 |
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