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JPH0517170B2 - - Google Patents
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JPH0517170B2 - - Google Patents

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Publication number
JPH0517170B2
JPH0517170B2 JP57089045A JP8904582A JPH0517170B2 JP H0517170 B2 JPH0517170 B2 JP H0517170B2 JP 57089045 A JP57089045 A JP 57089045A JP 8904582 A JP8904582 A JP 8904582A JP H0517170 B2 JPH0517170 B2 JP H0517170B2
Authority
JP
Japan
Prior art keywords
zinc sulfide
thin film
sintered body
zinc
sulfide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57089045A
Other languages
Japanese (ja)
Other versions
JPS58204824A (en
Inventor
Takao Toda
Yosuke Fujita
Tomizo Matsuoka
Atsushi Abe
Koji Nitsuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57089045A priority Critical patent/JPS58204824A/en
Publication of JPS58204824A publication Critical patent/JPS58204824A/en
Publication of JPH0517170B2 publication Critical patent/JPH0517170B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、硫化亜鉛系薄膜の製造方法に関し、
とりわけ、薄膜中に微小粒子や、ピンホールを含
まない均質で高品質な硫化亜鉛系薄膜の製造方法
に関するものである。 従来、硫化亜鉛系薄膜は、硫化亜鉛系焼結体を
電子ビーム蒸着することにより形成されていた。
この際用いる硫化亜鉛系焼結体は、硫化亜鉛粉末
またはMn、Cu、TbF3などの活性物質を含む硫
化亜鉛粉末を、たとえば400Kg/cm2の圧力で成形
し、不活性ガスまたは硫化水素を含む不活性ガス
中で、1000℃〜1200℃の温度で、1〜3時間焼成
することにより形成されていた。このように形成
した硫化亜鉛系焼結体に電子ビームを照射し、加
熱蒸発させ、硫化亜鉛系薄膜を形成した場合、薄
膜中に1〜20ミクロンの粒径の微小粒子やピンホ
ールが生ずるという欠点があつた。またこのよう
な薄膜をEL薄膜として応用した場合、微小粒子
やピンホールが原因となり、絶縁破壊を引き起こ
し、安定なEL素子を形成することができない。 このように薄膜中に微小粒子やピンホールを生
ずる原因は、従来の方法で作成した硫化亜鉛系焼
結体は理論密度の60〜75%程度の密度であり焼結
体を構成する結晶粒径も小さく、また硫化亜鉛系
焼結体は溶融せずに昇華蒸発するため、電子ビー
ムを照射して蒸発させたときに硫化亜鉛焼結体が
帯電し、焼結体中に存在していた微小粒子や、昇
華のため小さくなつた結晶粒からなる微小粒子が
静電的反発力により飛散し、基板表面に付着する
ためと考えられる。 本発明は上記従来技術にもとづき硫化亜鉛を主
成分とする粉末に、Li、Na、K、Rb、Cs、Ba、
Sr、Ca、Mgの塩化物、水酸化物、硝酸塩の1種
類以上を添加して、不活性ガスまたは硫化雰囲気
中で熱処理することにより形成した硫化亜鉛系焼
結体に電子ビームを照射し、加熱蒸発させる、い
わゆる電子ビーム蒸着を行ない薄膜中の微小粒子
やピンホールが皆無に近い高品質で均質な硫化亜
鉛系薄膜を形成するものである。 このような方法で作成した硫化亜鉛系焼結体
は、Li、Na、K、Rb、Cs、Ba、Sr、Ca、Mg
の1種類以上が焼結のためのフラツクスとして作
用し〔J.Amer.Cer.Soc、65(2)C−18頁に記載〕、
密度が高く、粒径が大きいため、電子ビームを照
射した場合、昇華が焼結体表面から一様に起るた
め上記特性を得られると考えられる。また添加す
る金属としては、Li、Na、K、Rb、Csが有効で
あり、添加量としては亜鉛に対する濃度が0.1〜
2原子%が適当であつた。つまり、0.1%以下で
は効果が微弱であり、2%以上では焼成時にボー
トと反応する欠点があつた。また他の金属として
は、Ca、Mg、Sr、Baが有効であり、添加量と
しては、亜鉛に対する濃度が0.02〜2原子%が適
当であつた。つまり0.02原子%以下では効果は微
弱であり、2原子%より上では焼成時にボートと
反応する欠点があつた。Li、Na、K、Rb、Cs、
Ba、Sr、Ca、Mgは塩化物、水酸化物または硝
酸塩などの水溶性化合物を用い、湿式混合するこ
とにより容易に均質に添加することができた。ま
た硫化亜鉛系焼結体中に発光中心として、Mn、
Cu、Ag、Al、Tb、Dy、Er、Pr、Sm、Ho、
Tmまたはこれらのハロゲン化物のうち少なくと
も1種類以上を含む場合においても、Li、Na、
K、Rb、Cs、Ba、Sr、Ca、Mgの1種類以上の
添加が有効である。 以下実施例により説明する。市販の硫化亜鉛粉
末(粒径0.1〜1.5ミクロン)に、Li、Na、K、
Rb、Cs、Ba、Sr、Ca、Mgの1種類以上の化合
物を添加し、乳鉢により混合した後、約10重量%
の水を加え、さらに混合した後造粒した。この粉
末を400Kg/cm2の圧力で成形し、直径15mm、厚さ
10mmの円柱体とし、これを硫化雰囲気中または不
活性ガス雰囲気中で、1000〜1200℃の温度で、1
時間の焼成を行なつた。第1表に、使用したLi、
Na、K、Rb、Cs、Ba、Sr、Ca、Mgの金属化
合物の種類および濃度、焼成雰囲気、焼成温度、
焼成時間、および得られた硫化亜鉛系焼結体の密
度(理論密度に対する割合)を示す。 表から判るように得られた焼結体の密度は、理
論密度の90%以上であつた。この焼結体を用い
て、電子ビーム蒸着により硫化亜鉛系薄膜を形成
したところ、従来の製法の硫化亜鉛系焼結体を用
いて同様に形成した薄膜に比べて、薄膜中の微小
粒子やピンホールの数が激減し、高品質で均質な
硫化亜鉛系薄膜を形成することができた。 また図面に示すようなEL素子のEL発光体層4
を0.03原子%の塩化バリウムを含む硫化亜鉛系焼
結体を電子ビームで蒸着し、同時に抵抗加熱によ
りMnを蒸着し、0.8原子%のMnを含む硫化亜鉛
薄膜で形成し、発光特性を測定した結果、微小な
絶縁破壊も極めて少なく、安定なEL素子である
ことが判明した。
The present invention relates to a method for producing a zinc sulfide-based thin film,
In particular, it relates to a method for producing a homogeneous, high-quality zinc sulfide-based thin film that does not contain microparticles or pinholes in the thin film. Conventionally, zinc sulfide-based thin films have been formed by electron beam evaporation of zinc sulfide-based sintered bodies.
The zinc sulfide-based sintered body used in this case is made by molding zinc sulfide powder or zinc sulfide powder containing active substances such as Mn, Cu, and TbF 3 at a pressure of, for example, 400 kg/cm 2 and then blowing inert gas or hydrogen sulfide. It was formed by firing at a temperature of 1000° C. to 1200° C. for 1 to 3 hours in an inert gas containing. When a zinc sulfide-based sintered body formed in this way is irradiated with an electron beam and heated to evaporate to form a zinc sulfide-based thin film, microparticles and pinholes with a particle size of 1 to 20 microns are generated in the thin film. There were flaws. Furthermore, when such a thin film is applied as an EL thin film, microparticles and pinholes cause dielectric breakdown, making it impossible to form a stable EL element. The reason for the formation of microparticles and pinholes in the thin film is that the zinc sulfide sintered body produced by the conventional method has a density of about 60 to 75% of the theoretical density, and the crystal grain size that makes up the sintered body Also, zinc sulfide-based sintered bodies sublimate and evaporate without melting, so when the zinc sulfide sintered body is irradiated with an electron beam and evaporated, it becomes electrically charged, and the microscopic particles that were present in the sintered body are charged. This is thought to be because particles and microparticles made of crystal grains that have become smaller due to sublimation are scattered due to electrostatic repulsion and adhere to the substrate surface. The present invention is based on the above-mentioned conventional technology, and uses powder containing zinc sulfide as a main component, Li, Na, K, Rb, Cs, Ba,
A zinc sulfide-based sintered body formed by adding one or more types of chlorides, hydroxides, and nitrates of Sr, Ca, and Mg and heat-treating it in an inert gas or sulfide atmosphere is irradiated with an electron beam, It uses heating and evaporation, so-called electron beam evaporation, to form a high-quality, homogeneous zinc sulfide-based thin film with almost no microparticles or pinholes in the thin film. The zinc sulfide sintered body created by this method contains Li, Na, K, Rb, Cs, Ba, Sr, Ca, Mg
one or more of the following acts as a flux for sintering [described in J.Amer.Cer.Soc, page 65(2)C-18],
Due to the high density and large particle size, when irradiated with an electron beam, sublimation occurs uniformly from the surface of the sintered body, which is thought to provide the above characteristics. In addition, as metals to be added, Li, Na, K, Rb, and Cs are effective, and the addition amount is 0.1 to 0.1 to
2 atomic % was appropriate. In other words, if it is less than 0.1%, the effect is weak, and if it is more than 2%, it has the disadvantage of reacting with the boat during firing. Further, as other metals, Ca, Mg, Sr, and Ba were effective, and the appropriate amount to be added was 0.02 to 2 atomic percent relative to zinc. That is, below 0.02 atomic %, the effect is weak, and above 2 atomic %, there is a drawback that it reacts with the boat during firing. Li, Na, K, Rb, Cs,
Ba, Sr, Ca, and Mg could be easily added homogeneously by wet mixing using water-soluble compounds such as chlorides, hydroxides, or nitrates. In addition, Mn,
Cu, Ag, Al, Tb, Dy, Er, Pr, Sm, Ho,
Even when it contains Tm or at least one of these halides, Li, Na,
Addition of one or more of K, Rb, Cs, Ba, Sr, Ca, and Mg is effective. This will be explained below using examples. Commercially available zinc sulfide powder (particle size 0.1 to 1.5 microns) contains Li, Na, K,
After adding one or more compounds of Rb, Cs, Ba, Sr, Ca, Mg and mixing in a mortar, approximately 10% by weight
of water was added, further mixed, and then granulated. This powder was molded at a pressure of 400Kg/cm 2 to a diameter of 15mm and a thickness of
A 10 mm cylindrical body is heated at a temperature of 1000 to 1200°C in a sulfuric atmosphere or an inert gas atmosphere for 1 hour.
The firing of the time was carried out. Table 1 shows the Li used,
Type and concentration of metal compounds of Na, K, Rb, Cs, Ba, Sr, Ca, Mg, firing atmosphere, firing temperature,
The firing time and the density (ratio to theoretical density) of the obtained zinc sulfide-based sintered body are shown. As can be seen from the table, the density of the obtained sintered body was 90% or more of the theoretical density. When a zinc sulfide-based thin film was formed using this sintered body by electron beam evaporation, the microparticles in the thin film and pins The number of holes was drastically reduced, and a high-quality, homogeneous zinc sulfide-based thin film could be formed. In addition, the EL light emitter layer 4 of the EL element as shown in the drawing
A zinc sulfide-based sintered body containing 0.03 at% barium chloride was deposited using an electron beam, and Mn was simultaneously deposited by resistance heating to form a zinc sulfide thin film containing 0.8 at% Mn, and the luminescence properties were measured. As a result, it was found that the EL element was stable, with very little dielectric breakdown.

【表】【table】

【表】 以上のように、本発明の製法によれば、ピンホ
ールや微小付着物が極めて少なく良質の硫化亜鉛
系薄膜が再現性よく形成でき、レンズの反射防止
膜などの光学薄膜、高解像度CRT用蛍光面とし
て研究されている蛍光体薄膜、またはEL薄膜な
どとして広く応用できる。
[Table] As described above, according to the manufacturing method of the present invention, a high-quality zinc sulfide-based thin film with extremely few pinholes and minute deposits can be formed with good reproducibility. It can be widely applied as a phosphor thin film, which is being researched as a fluorescent screen for CRTs, or an EL thin film.

【図面の簡単な説明】[Brief explanation of drawings]

図面は、本発明の一実施例の製造方法により形
成されたEL素子の構造を示す図である。 1……ガラス基板、2……透明電極、3……酸
化イツトリウム薄膜、4……マンガン付活硫化亜
鉛薄膜、5……酸化イツトリウム薄膜、6……ア
ルミニウム電極。
The drawings are diagrams showing the structure of an EL element formed by a manufacturing method according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Glass substrate, 2...Transparent electrode, 3...Yttrium oxide thin film, 4...Manganese activated zinc sulfide thin film, 5...Yttrium oxide thin film, 6...Aluminum electrode.

Claims (1)

【特許請求の範囲】 1 硫化亜鉛を主成分とし、Li、Na、K、Rb、
Cs、Ba、Sr、Ca、Mgの塩化物、水酸化物、硝
酸塩の1種類以上を添加物とする材料を不活性ガ
スまたは硫化雰囲気中で熱処理して硫化亜鉛系焼
結体とし、前記硫化亜鉛系焼結体に電子ビームを
照射し、前記硫化亜鉛系焼結体を加熱蒸発させ、
基板上に硫化亜鉛系薄膜を堆積させることを特徴
とする硫化亜鉛系薄膜の製造方法。 2 硫化亜鉛系焼結体が、Mu、Cu、Ag、Al、
Tb、Dy、Er、Pr、Sm、Ho、Tmのうち少なく
とも1種類を含むことを特徴とする特許請求の範
囲第1項に記載の硫化亜鉛系薄膜の製造方法。 3 Li、Na、K、Rb、Csの1種類以上の添加物
の亜鉛に対する濃度が0.1〜2原子%であること
を特徴とする特許請求の範囲第1項に記載の硫化
亜鉛系薄膜の製造方法。 4 Ba、Sr、Ca、Mgの1種類以上の添加物の
亜鉛に対する濃度が0.02〜2原子%であることを
特徴とする特許請求の範囲第1項に記載の硫化亜
鉛系薄膜の製造方法。
[Claims] 1 Main component is zinc sulfide, Li, Na, K, Rb,
A material containing one or more of chlorides, hydroxides, and nitrates of Cs, Ba, Sr, Ca, and Mg as an additive is heat-treated in an inert gas or sulfide atmosphere to form a zinc sulfide-based sintered body, and the sulfide irradiating the zinc-based sintered body with an electron beam to heat and evaporate the zinc sulfide-based sintered body,
A method for producing a zinc sulfide-based thin film, which comprises depositing a zinc sulfide-based thin film on a substrate. 2 The zinc sulfide-based sintered body contains Mu, Cu, Ag, Al,
The method for producing a zinc sulfide-based thin film according to claim 1, characterized in that it contains at least one of Tb, Dy, Er, Pr, Sm, Ho, and Tm. 3. Production of a zinc sulfide-based thin film according to claim 1, characterized in that the concentration of one or more additives of Li, Na, K, Rb, and Cs relative to zinc is 0.1 to 2 atomic %. Method. 4. The method for producing a zinc sulfide-based thin film according to claim 1, wherein the concentration of one or more additives of Ba, Sr, Ca, and Mg relative to zinc is 0.02 to 2 atomic %.
JP57089045A 1982-05-25 1982-05-25 Production of thin film of zinc sulfide Granted JPS58204824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57089045A JPS58204824A (en) 1982-05-25 1982-05-25 Production of thin film of zinc sulfide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57089045A JPS58204824A (en) 1982-05-25 1982-05-25 Production of thin film of zinc sulfide

Publications (2)

Publication Number Publication Date
JPS58204824A JPS58204824A (en) 1983-11-29
JPH0517170B2 true JPH0517170B2 (en) 1993-03-08

Family

ID=13959914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57089045A Granted JPS58204824A (en) 1982-05-25 1982-05-25 Production of thin film of zinc sulfide

Country Status (1)

Country Link
JP (1) JPS58204824A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6771019B1 (en) 1999-05-14 2004-08-03 Ifire Technology, Inc. Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186088A (en) * 1975-01-27 1976-07-28 Sharp Kk Sekishokuhatsukoerekutorominesensuhakumakunoseiseiho
JPS53108293A (en) * 1977-12-12 1978-09-20 Sharp Corp Electroluminescence thin film element

Also Published As

Publication number Publication date
JPS58204824A (en) 1983-11-29

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