JPH06417B2 - Thermal head resistance adjustment device - Google Patents
Thermal head resistance adjustment deviceInfo
- Publication number
- JPH06417B2 JPH06417B2 JP61204009A JP20400986A JPH06417B2 JP H06417 B2 JPH06417 B2 JP H06417B2 JP 61204009 A JP61204009 A JP 61204009A JP 20400986 A JP20400986 A JP 20400986A JP H06417 B2 JPH06417 B2 JP H06417B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- heating resistor
- voltage
- value
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/35—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads providing current or voltage to the thermal head
- B41J2/355—Control circuits for heating-element selection
Landscapes
- Electronic Switches (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は発熱抵抗体の抵抗値を均一化させるサーマル
ヘッドの抵抗値調整装置に関する。Description: TECHNICAL FIELD The present invention relates to a resistance adjusting device for a thermal head that equalizes the resistances of heating resistors.
周知のように厚膜形のサーマルヘツドはペースト状の抵
抗材料にスクリーン印刷法等によつて所定のパターンに
印刷し、その後焼成することで発熱抵抗体を形成してい
る。そのため、厚膜形のサーマルヘツドは比較的短い製
造工程によつて安価に製造できる反面、発熱抵抗体の抵
抗値のばらつきが大きくなる欠点を持ち合せている。こ
の発熱抵抗体の抵抗値のばらつきは印字等の質に直接影
響を及ぼすものであるため、厚膜形のサーマルヘツドの
製造においては発熱抵抗体の抵抗値の均一化は極めて重
要な要因である。この発熱抵抗体の抵抗値の均一化とし
ては、発熱抵抗体形成後、各発熱抵抗体に個別に比較的
高圧の電圧パルスを印加すると、その抵抗値が低下する
という現象を利用したトリミング処理がある。As is well known, a thick film type thermal head is formed by printing a paste-like resistance material in a predetermined pattern by a screen printing method or the like and then firing it to form a heating resistor. Therefore, the thick-film type thermal head can be manufactured at a low cost by a relatively short manufacturing process, but has a drawback that the resistance value of the heating resistor varies greatly. Since the variation in the resistance value of the heating resistor directly affects the quality of printing and the like, it is an extremely important factor to make the resistance value of the heating resistor uniform in the production of the thick film type thermal head. . To make the resistance values of the heating resistors uniform, a trimming process using the phenomenon that when the heating resistors are formed and a relatively high voltage pulse is individually applied to each heating resistor, the resistance value decreases is used. is there.
このように従来のサーマルヘツドの製造方法は電圧値を
漸増させながら発熱抵抗体に電圧パルスを繰返し印加
し、発熱抵抗体の抵抗値をある目標値に設定させるよう
にするもので、実験により発熱抵抗体の抵抗値はその初
期値にかかわらず、印加する電圧パルスを漸増させてい
くときに変化率が一定の曲線上を推移していくことがわ
かつた。In this way, the conventional thermal head manufacturing method involves repeatedly applying a voltage pulse to the heating resistor while gradually increasing the voltage value to set the resistance value of the heating resistor to a certain target value. It was found that the resistance value of the resistor changes on a curve with a constant rate of change as the applied voltage pulse is gradually increased, regardless of its initial value.
この変化率は、 で近似的に表わすことができる。なお、(1)式中、Vは
印加電圧、Rは発熱抵抗体の抵抗値、R0は発熱抵抗体
の初期抵抗値、V0は抵抗値に変化が現われ始める印加
電圧の境界値、ΔVは印加電圧の変化ステップ、α,β
はサーマルヘツドの構造、ドツト密度等で決まる定数で
ある。This rate of change is Can be approximately represented by. In the equation (1), V is the applied voltage, R is the resistance value of the heating resistor, R 0 is the initial resistance value of the heating resistor, V 0 is the boundary value of the applied voltage at which the resistance value starts to change, and ΔV Is the change step of applied voltage, α, β
Is a constant determined by the thermal head structure, dot density, and the like.
第3図はこのような方法によつて電圧パルスを発熱抵抗
体に印加した場合の発熱抵抗体の抵抗値の減少を示す線
図であり、トリミング前にはR1,R2,R3と大きく
ばらついていた抵抗値がトリミング処理により目標値R
0よりわずかに低い狭い範囲内に均一化される。図にお
いて、Vsは電圧パルスの初期値であり、電圧パルスの
印加によつて発熱抵抗体の抵抗値が減少を始める境界電
圧が通常は25V近傍にあるため、例えば25Vに設定
されている。また、ΔVは電圧パルスの電圧値の増し分
であり、発熱抵抗体の抵抗値が減少し過ぎないように例
えば2.5Vに設定して徐々に抵抗値を減少させるよう
にしている。FIG. 3 is a diagram showing a decrease in the resistance value of the heating resistor when a voltage pulse is applied to the heating resistor by such a method. Before trimming, R 1 , R 2 , R 3 Due to the trimming process, the resistance value, which was greatly varied, is the target value R.
It is homogenized within a narrow range slightly below 0 . In the figure, V s is the initial value of the voltage pulse, and since the boundary voltage at which the resistance value of the heating resistor starts to decrease due to the application of the voltage pulse is usually around 25 V, it is set to 25 V, for example. Further, ΔV is an increment of the voltage value of the voltage pulse, and is set to, for example, 2.5 V so that the resistance value of the heating resistor does not decrease too much, and the resistance value is gradually decreased.
第4図は、横軸に電圧パルスによる印加電圧値が、縦軸
に電圧パルス印加による発熱抵抗体の抵抗変化率が目盛
られた線図である。そして、第4図は第3図と同一デー
タで第3図の縦軸を抵抗変化率で表わしたもので、個々
の発熱抵抗体の初期抵抗値はばらつきを呈していても変
化率の曲線は第4図に破線で示す如く初期抵抗値には関
係なくほぼ一定の曲線Y上をたどる発熱抵抗体の抵抗値
の減少を示す線図が描ける。FIG. 4 is a diagram in which the horizontal axis represents the applied voltage value by the voltage pulse and the vertical axis represents the resistance change rate of the heating resistor by the voltage pulse application. FIG. 4 shows the same data as in FIG. 3 with the vertical axis of FIG. 3 represented by the resistance change rate. Even if the initial resistance values of the individual heating resistors vary, the change rate curve is As shown by the broken line in FIG. 4, a diagram showing a decrease in the resistance value of the heating resistor that follows a substantially constant curve Y regardless of the initial resistance value can be drawn.
このようなサーマルヘツドの製造方法では1ドツトの発
熱抵抗体のトリミングには20〜30回の電圧パルスの
印加および抵抗値の測定をしなければならず、発熱抵抗
体の抵抗値の均一化には多大な時間を要することにな
る。In such a thermal head manufacturing method, in order to trim a one-dot heating resistor, it is necessary to apply a voltage pulse 20 to 30 times and to measure the resistance value, so that the resistance value of the heating resistor can be made uniform. Will take a great deal of time.
このため、近時はサーマルヘツド内のサンプルドツトの
測定によつて抵抗値降下曲線を近似し、トリミングに際
してこの抵抗値降下曲線を用いてドツトの発熱抵抗体の
初期抵抗値と到達させるべき抵抗値とより印加する電圧
パルスの電圧値を決定して1回の電圧パルスの印加で発
熱抵抗値の抵抗値を目標値に減少させるようにした抵抗
値の均一化方法が考えられるに至つた。Therefore, recently, the resistance drop curve is approximated by measuring the sample dot in the thermal head, and this trimming curve is used during trimming to determine the initial resistance value of the heating resistor of the dot and the resistance value to be reached. Therefore, a method of making the resistance value uniform by determining the voltage value of the voltage pulse to be applied and reducing the resistance value of the heating resistance value to the target value by applying the voltage pulse once has been conceived.
すなわち、第5図は従来のサーマルヘツドの製造方法を
示すフローチヤートである。同図において、ST1は初
期設定のステツプ、ST2は上記ステツプST1に続く
サンプルの抵抗変化測定のステツプ、ST3は上記ステ
ツプST2に続く抵抗値降下曲線近似のステツプ、ST
4は上記ステツプST3に続く抵抗値測定のステツプ、
ST5は上記ステツプST4に続く印加電圧決定のステ
ツプ、ST6は上記ステツプST5に続く電圧パルス印
加のステツプ、ST7は上記ステツプST6に続くトリ
ミングの全ドツト終了検出のステツプであり、このステ
ツプST7の分岐からはステツプST4に処理が戻され
る。That is, FIG. 5 is a flow chart showing a conventional method for manufacturing a thermal head. In the figure, ST1 is an initial setting step, ST2 is a step for measuring a resistance change of a sample following the step ST1, ST3 is a step for approximating a resistance value drop curve following the step ST2, and ST.
4 is a resistance value measuring step following the step ST3,
ST5 is a step for determining an applied voltage following step ST4, ST6 is a step for applying a voltage pulse following step ST5, and ST7 is a step for detecting the end of all trimming dots following step ST6. Returns to step ST4.
第6図はこのサーマルヘツドの製造方法を実施する装置
の一例を示すブロツク図であり、図において、1はトリ
ミング処理が行われるサーマルヘツド、2はこのサーマ
ルヘツド1の各発熱抵抗体の端子にプローブを押し当て
るプロービング装置、3はこのプロービング装置2に接
続されて上記発熱抵抗体の選択を行うリレー網、4はこ
のリレー網3に接続されて電圧パルスの印加と抵抗値の
測定とを切換えるスイツチ、5はこのスイツチ4の一方
に接続されて指定された電圧値の電圧パルスを送出する
パルス発生器、6はスイツチ4の他方に接続された抵抗
計、7は入出力部8、中央処理部(以下、CPUとい
う)9、メモリ10、キーボード11等を備えて上記諸
装置の制御を行なうとともに所要の演算処理を行う制御
演算部、12はこの制御演算部7に接続されたプリンタ
である。FIG. 6 is a block diagram showing an example of an apparatus for carrying out this thermal head manufacturing method. In the figure, 1 is a thermal head on which trimming processing is performed, and 2 is a terminal of each heating resistor of this thermal head 1. A probing device 3 for pressing the probe is connected to the probing device 2 to select the heating resistor. A relay network 4 is connected to the relay network 3 to switch between application of a voltage pulse and measurement of a resistance value. A switch 5 is a pulse generator connected to one side of the switch 4 to send out a voltage pulse of a designated voltage value, 6 is a resistance meter connected to the other side of the switch 4, 7 is an input / output unit 8, and a central processing unit. A control arithmetic unit 12 for controlling the above-mentioned devices and performing necessary arithmetic processing, including a unit (hereinafter referred to as CPU) 9, a memory 10, a keyboard 11 and the like. A printer connected to the control calculation unit 7.
次に動作について説明する。まず、ステツプST1で初
期設定が行われ、次いでステツプST2でサンプルの抵
抗変化測定が行われる。すなわち、リレー網3を制御し
てサーマルヘツド1のサンプルとして指定されたドツト
の発熱抵抗体を選択し、スイツチ4を切換えて抵抗計6
へ接続して抵抗値を測定し、その測定値を制御演算部7
へ送り、制御演算部7のCPU9はこれをメモリ10へ
格納する。次に、スイツチ4を切換えてパルス発生器5
より所定の電圧値を電圧パルスを上記発熱抵抗体に印加
する。ここで、この電圧パルスは例えば幅が2μsecの
パルスが15個、周期50μsecで連続するパルス列で
ある。次に、再度スイツチを切換えて電圧パルスが印加
された発熱抵抗体を抵抗計6に接続して抵抗値を測定
し、制御演算部7へ送る。制御演算部7のCPU9はそ
れを印加した電圧パルスの電圧値とともにメモリ10に
格納する。以下、同様にして電圧パルスの電圧値を適宜
上昇させながら、これらを処理を繰返す。この処理は少
なくとも3回繰返して実行され、リレー網3を切換えて
いくつかのサンプルについて実行される。Next, the operation will be described. First, in step ST1, initial setting is performed, and then in step ST2, resistance change measurement of the sample is performed. That is, the relay network 3 is controlled to select the dot heating resistor designated as a sample of the thermal head 1, and the switch 4 is switched to switch the resistance meter 6
And the resistance value is measured, and the measured value is controlled by the calculation unit 7
Then, the CPU 9 of the control calculation unit 7 stores it in the memory 10. Next, the switch 4 is switched to switch the pulse generator 5
A voltage pulse with a more predetermined voltage value is applied to the heating resistor. Here, this voltage pulse is a pulse train in which, for example, 15 pulses having a width of 2 μsec and a period of 50 μsec are continuous. Next, the switch is switched again to connect the heating resistor to which the voltage pulse is applied to the resistance meter 6 to measure the resistance value and send it to the control calculation unit 7. The CPU 9 of the control calculation unit 7 stores it in the memory 10 together with the voltage value of the applied voltage pulse. Hereinafter, similarly, the processes are repeated while appropriately increasing the voltage value of the voltage pulse. This process is repeated at least three times, switching relay network 3 and executing for some samples.
次に、ステツプST3において、測定された抵抗変化に
基づく抵抗値降下曲線の近似が行われる。すなわち、制
御演算部7のCPU9はメモリ10に格納しておいた抵
抗変化から電圧パルスによる各印加電圧における抵抗変
化率ΔR=(R-R0)/R0を求め、これを上記(1)式に代入す
る。これによつて各サンプル毎にそれぞれα,β,V0
を未知数とする方程式を作成してこれを解く。ここで三
つの未知数に対して四つ以上の方程式がある場合にはこ
れを統計的に処理して解を得る。得られた解はさらに各
サンプル間で統計的に処理され、得られた定数α,β、
境界電圧値V0が(1)式に代入されて抵抗変化率ΔRと
印加電圧Vとの関係を示す第2図の抵抗値降下曲線Aが
近似される。Next, in step ST3, the resistance drop curve is approximated based on the measured resistance change. That is, the CPU 9 of the control calculation unit 7 obtains the resistance change rate ΔR = (RR 0 ) / R 0 at each applied voltage by the voltage pulse from the resistance change stored in the memory 10, and this is expressed by the above formula (1). substitute. As a result, α, β, V 0 for each sample
Create an equation with unknown and solve it. If there are four or more equations for three unknowns, they are statistically processed to obtain a solution. The obtained solution is further statistically processed between each sample, and the obtained constants α, β,
The boundary voltage value V 0 is substituted into the equation (1), and the resistance value drop curve A of FIG. 2 showing the relationship between the resistance change rate ΔR and the applied voltage V is approximated.
これで準備段階を終了してステツプST4よりトリミン
グの処理に入る。まず、ステツプST4において、リレ
ー網3でトリミングを実施するドツトを選択し、スイツ
チ4によつてこれを抵抗計6に接続してその抵抗値を測
定する。次に、ステツプST5ではCPU9によつて得
られた抵抗値を目標値まで降下させるための抵抗変化率
ΔRnが算出され、さらに前述の抵抗値降下曲線Aを用
いて電圧パルスの印加電圧Vnを決定する。すなわち、
上記α,β,V0が代入された関係式に抵抗変化率ΔR
nを代入して印加電圧Vnを算出する。得られた印加電
圧Vnは制御演算部7よりパルス発生器5へ送られる。
ステツプST6でスイツチ4が切換えられると、パルス
発生器5からは電圧がVnの電圧パルスが送出され、ト
リミングを実施するドツトの発熱抵抗対に印加される。
これによつて当該発熱抵抗体の抵抗値は目標値近傍に降
下する。以下ステツプST7が全ドツトのトリミングの
終了を検出するまでステツプST4以後の処理を繰返
す。This completes the preparatory stage and starts the trimming process from step ST4. First, in step ST4, a dot to be trimmed by the relay network 3 is selected, and this is connected to the ohmmeter 6 by the switch 4, and the resistance value is measured. Next, in step ST5, the resistance change rate ΔRn for lowering the resistance value obtained by the CPU 9 to the target value is calculated, and further, the applied voltage Vn of the voltage pulse is determined using the resistance value decrease curve A described above. To do. That is,
In the relational expression in which the above α, β, and V 0 are substituted, the resistance change rate ΔR
The applied voltage Vn is calculated by substituting n. The obtained applied voltage Vn is sent from the control calculation unit 7 to the pulse generator 5.
When the switch 4 is switched at step ST6, a voltage pulse having a voltage Vn is sent from the pulse generator 5 and applied to the dot heating resistor pair for trimming.
As a result, the resistance value of the heating resistor falls near the target value. Thereafter, steps ST4 and subsequent steps are repeated until step ST7 detects the end of trimming of all dots.
従来のサーマルヘツドの製造方法は以上のように構成さ
れているので、第2図に示した抵抗値降下曲線Aを使つ
て算出した電圧を発熱抵抗体に印加した場合に実際に発
生した抵抗値変化率を示した○印からも明らかなように
抵抗値降下曲線Aを中心に分布している。また、この抵
抗値降下曲線Aは印加電圧値が高くなるに随つてその曲
線が急峻になる。このため、抵抗値変化率の絶対量の抵
抗値降下曲線Aからのずれも大きくなるので、1回の電
圧パルスを印加させるだけで目標とする抵抗値近傍に発
熱抵抗体の抵抗値を精度よく到達させることは困難で過
剰に抵抗値が降下してしまうという問題点があつた。Since the conventional thermal head manufacturing method is configured as described above, the resistance value actually generated when the voltage calculated using the resistance value drop curve A shown in FIG. 2 is applied to the heating resistor. As is clear from the mark ◯ indicating the rate of change, the distribution is centered on the resistance drop curve A. Further, the resistance value decrease curve A becomes steeper as the applied voltage value becomes higher. Therefore, the deviation of the absolute value of the resistance value change rate from the resistance value drop curve A also becomes large, so that the resistance value of the heating resistor can be accurately set in the vicinity of the target resistance value only by applying one voltage pulse. It was difficult to reach the target, and the resistance value dropped excessively.
この発明は上記のような問題点を解消するためになされ
たもので、発熱抵抗体の抵抗値の均一化を短時間にしか
も精度よく行えるようにしたサーマルヘッドの抵抗値調
整装置を得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a resistance adjusting device for a thermal head, which can make the resistance values of the heating resistors uniform in a short time and with high accuracy. To aim.
この発明に係るサーマルヘッドの抵抗値調整装置は、サ
ンプルとして選ばれた発熱抵抗体に電圧値の異なる電圧
パルスを低圧のものから順次印加してその抵抗値を降下
させ、印加電圧と抵抗変化との関係を近似的に示す抵抗
値降下曲線を急峻な曲線に補正し、この補正した抵抗値
降下曲線を用いて各発熱抵抗体の初期抵抗値を目標値ま
で降下させるための抵抗値変化率より上記各発熱抵抗体
へ印加する上記電圧パルスの電圧値を決定し、この決定
した電圧値を上記各発熱抵抗体に印加してその抵抗値を
降下させて均一化させるものである。A resistance adjusting device for a thermal head according to the present invention applies a voltage pulse having different voltage values to a heating resistor selected as a sample sequentially from a low voltage one to decrease its resistance value, thereby applying voltage and resistance change. Is corrected to a steep curve and the corrected resistance drop curve is used to calculate the resistance change rate for lowering the initial resistance of each heating resistor to the target value. The voltage value of the voltage pulse applied to each of the heating resistors is determined, and the determined voltage value is applied to each of the heating resistors to lower the resistance value and make it uniform.
この発明におけるサーマルヘッドの抵抗値調整装置は、
サーマルヘツド内のサンプルドツトの測定によつて抵抗
値降下曲線を近似し、トリミングに際してこの抵抗値降
下曲線を急峻に補正した曲線を用いて測定したそのドツ
トの発熱抵抗体の抵抗値より印加する電圧パルスの電圧
値を決定して1回の電圧パルスの印加で発熱抵抗体の抵
抗値を目標値より降下しない範囲に近づけるようにす
る。The resistance adjusting device of the thermal head in this invention is
The voltage applied from the resistance value of the heating resistor at that dot measured by approximating the resistance drop curve by measuring the sample dot in the thermal head and using the curve that sharply corrects this resistance drop curve during trimming The voltage value of the pulse is determined so that the resistance value of the heating resistor approaches a range in which it does not drop below the target value with one application of the voltage pulse.
以下この発明の一実施例を図について説明する。第1図
において、ST11は初期設定のステツプ、ST12は
上記ステツプST11に続くサンプルの抵抗変化測定の
ステツプ、ST13は上記ステツプST12に続く抵抗
値降下曲線近似のステツプ、ST14は上記ステツプS
T13に続く抵抗値降下曲線補正のステツプ、ST15
は上記ステツプST14に続く抵抗値測定のステツプ、
ST16は上記ステツプST15に続く印加電圧決定の
ステツプ、ST17は上記ステツプST16に続く電圧
パルス印加のステツプ、ST18は上記ステツプST1
7に続く目標値比較のステツプ、ST19は上記ステツ
プST18に続く抵抗値測定のステツプ、ST20は上
記ステツプST19に続く印加電圧決定のステツプ、S
T21は上記ステツプST20に続く電圧パルス印加の
ステツプ、ST22は上記ステツプST21に続くトリ
ミングの全ドツト終了検出のステツプであり、このステ
ツプST22の分岐からはステツプST15に処理が戻
される。また、ステツプST18の分岐からはステツプ
ST22へ処理が進む。An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, ST11 is an initial setting step, ST12 is a step for measuring a resistance change of the sample following the step ST11, ST13 is a step for approximating a resistance drop curve following the step ST12, and ST14 is the step S.
Step of resistance drop curve correction following T13, ST15
Is a resistance measurement step following step ST14,
ST16 is a step for determining an applied voltage following step ST15, ST17 is a step for applying a voltage pulse following step ST16, and ST18 is a step ST1.
7 is a step of comparing the target value, ST19 is a step of measuring the resistance value following the step ST18, ST20 is a step of determining the applied voltage following the step ST19, and S
T21 is a step of applying a voltage pulse following step ST20, ST22 is a step of detecting the end of all the trimming dots following step ST21, and the processing is returned from step ST22 to step ST15. The process proceeds from the branch of step ST18 to step ST22.
なお、ステップST18に続くステップ〜ステップST
21は不要となる。」とあるのを「ステップST18に
続くNOのステップとしては抵抗値測定のステップST
15であってもよい。この場合、ステップST19,S
T20,ST21は不要となり、またステップST18
の判定により、抵抗値は目標値に到達するまで絞り込ま
れていく。但し、ST18に続くNOからST15への
分岐が無限ループと形成しないように、ループ回数の制
限を予め設けておく必要がある。The steps following step ST18 to step ST
21 becomes unnecessary. "Is the step of resistance value measurement ST
It may be 15. In this case, steps ST19 and S
T20 and ST21 are unnecessary, and step ST18
According to the judgment, the resistance value is narrowed down until it reaches the target value. However, the number of loops must be limited in advance so that the branch from NO to ST15 following ST18 is not formed as an infinite loop.
しかして、この発明のサーマルヘッドの抵抗値調整装置
を実施する装置は第6図に示す装置を使用する。Therefore, the device for implementing the resistance adjusting device of the thermal head of the present invention uses the device shown in FIG.
次に動作について説明する。第2図は上記抵抗値降下曲
線の一例を示す線図であり、図中実線Aがその抵抗値降
下曲線で、横軸には電圧パルスによる印加電圧値が、縦
軸には電圧パルス印加による発熱抵抗体の抵抗変化率が
目盛られている。Next, the operation will be described. FIG. 2 is a diagram showing an example of the resistance drop curve, in which the solid line A is the resistance drop curve, the horizontal axis shows the voltage value applied by the voltage pulse, and the vertical axis shows the voltage pulse applied. The resistance change rate of the heating resistor is calibrated.
この実施例では、まずステツプST11で初期設定が行
われ、次いでステツプST12でサンプルの抵抗変化測
定が行われる。すなわち、リレー網3を制御してサーマ
ルヘツド1のサンプルとして指定されたドツトの発熱抵
抗体を選択し、スイツチ4を切換えて抵抗計6へ接続し
て抵抗値を測定し、その測定値を制御演算部7へ送り、
制御演算部7のCPU9はこれをメモリ10へ格納す
る。次に、スイツチ4を切換えてパルス発生器5より所
定の電圧値の電圧パルスを上記発熱抵抗体に印加する。
次に、再度スイツチ4を切換えてこの電圧パルスが印加
された発熱抵抗体を抵抗計6に接続して抵抗値を測定
し、制御演算部7へ送る。制御演算部7のCPU9はそ
れを印加した電圧パルスの電圧値とともにメモリ10に
格納する。In this embodiment, first, the initial setting is performed in step ST11, and then the resistance change measurement of the sample is performed in step ST12. That is, the relay network 3 is controlled to select the dot heating resistor specified as the sample of the thermal head 1, the switch 4 is switched and the resistance value is measured by connecting to the resistance meter 6, and the measured value is controlled. Send to the calculation unit 7,
The CPU 9 of the control calculation unit 7 stores this in the memory 10. Next, the switch 4 is switched to apply a voltage pulse of a predetermined voltage value from the pulse generator 5 to the heating resistor.
Next, the switch 4 is switched again and the heating resistor to which this voltage pulse is applied is connected to the resistance meter 6 to measure the resistance value and sent to the control calculation unit 7. The CPU 9 of the control calculation unit 7 stores it in the memory 10 together with the voltage value of the applied voltage pulse.
以下、同様にして電圧パルスの電圧値を適宜上昇させな
がら、これらの処理を繰返す。この処理は少なくとも3
回繰返して実行され、リレー網3を切換えていくつかの
サンプルについて実行される。次に、ステツプST13
において、メモリ10に格納しておいた抵抗変化から、
電圧パルスによる各印加電圧における抵抗変化率ΔRを
CPU9によつて求め、これを上記(1)式に代入する。
これによつて各サンプル毎にそれぞれα,β,V0を未
知数とする方程式を作成してこれを解く。得られた解は
さらに各サンプル間で統計的に処理され、得られた定数
α,β、境界電圧値V0が(1)式に代入されて抵抗値降
下曲線Aが近似される。次に、ステツプST14におい
て算出したα,βの数値を例えばα′=α×1.1のよ
うに補正することにより補正した抵抗値降下曲線A′を
得る。Hereinafter, similarly, these processes are repeated while appropriately increasing the voltage value of the voltage pulse. This process is at least 3
It is executed repeatedly, and the relay network 3 is switched to be executed for some samples. Next, step ST13
In the above, from the resistance change stored in the memory 10,
The resistance change rate ΔR at each applied voltage due to the voltage pulse is obtained by the CPU 9, and this is substituted into the above equation (1).
Accordingly, an equation having α, β, and V 0 as unknowns is created for each sample and solved. The obtained solution is further statistically processed between the respective samples, and the obtained constants α and β and the boundary voltage value V 0 are substituted into the equation (1) to approximate the resistance drop curve A. Next, by correcting the numerical values of α and β calculated in step ST14, for example, α ′ = α × 1.1, a corrected resistance drop curve A ′ is obtained.
これで準備段階を終了してステツプST15よりトリミ
ングの処理に入る。まず、ステツプST15において、
リレー網3でトリミングを実施するドツトを選択し、ス
イツチ4によつてこれを抵抗計6に接続してその抵抗値
を測定する。次に、ステツプST16ではCPU9によ
つて得られた抵抗値を目標値まで降下させるための抵抗
変化率ΔRnが算出され、さらに前述の抵抗値降下曲線
A′を用いて電圧パルスの印加電圧Vnを決定する。そ
して、ステツプST17でスイツチ4が切換えられる
と、パルス発生器5からは電圧がVnの電圧パルスが送
出され、当該発熱抵抗体に印加される。いま、例えば抵
抗変化率が−30%の変化を必要とする発熱抵抗体に対
する印加電圧は106Vとの答えを得るが、この電圧を
印加した場合に実際に発熱抵抗体の抵抗値の変化する量
の平均値は−22%である。その差8%が1回目のパル
ス印加で降下するときのばらつきに関するマージンとな
る。つまり、この補正を行うことにより1回目のパルス
印加で目標値よりも過剰に抵抗値が下がりすぎる発熱抵
抗体の発生を防ぐことができる。そして、ステツプST
18において、当該発熱抵抗体の抵抗値が目標値に近い
値にあるか否かの判定をし、極めて近い値であればステ
ツプST22に進み、目標値に対してまだ開きがある場
合はステツプST19に進む。そして、ステツプ19に
おいて、再度当該発熱抵抗体の抵抗値を前述と同様の手
段で測定し、ステツプST20によつて得られた抵抗値
を目標値まで降下させるための印加電圧を決定する。次
に、ステツプST21において、パルス発生器5からの
電圧パルスを送出して発熱抵抗体に電圧を印加する。こ
の場合の印加電圧が1回目の電圧と同じ値であれば、当
該発熱抵抗体の抵抗値はわずかに降下させることができ
る。このようにして、当該発熱抵抗体の抵抗値を目標値
に精度良く近づけることができる。以下、ステツプST
22が全ドツトのトリミングの終了を検出するまで、ス
テツプST15以後の処理が繰返される。This completes the preparatory stage and the trimming process starts from step ST15. First, in step ST15,
A dot to be trimmed is selected by the relay network 3 and is connected to the resistance meter 6 by the switch 4 to measure its resistance value. Next, in step ST16, the resistance change rate ΔRn for lowering the resistance value obtained by the CPU 9 to the target value is calculated, and the applied voltage Vn of the voltage pulse is further calculated using the above-mentioned resistance value decrease curve A ′. decide. When the switch 4 is switched in step ST17, a voltage pulse having a voltage Vn is sent from the pulse generator 5 and applied to the heating resistor. Now, for example, the answer is that the applied voltage to the heating resistor that requires a change in resistance change rate of -30% is 106V. However, when this voltage is applied, the amount of change in the resistance value of the heating resistor is actually changed. The average value of is 22%. The difference of 8% is a margin for the variation when the pulse is applied for the first time. That is, by performing this correction, it is possible to prevent the generation of a heating resistor whose resistance value is excessively decreased from the target value by the first pulse application. And step ST
At 18, it is judged whether or not the resistance value of the heating resistor is close to the target value. If the resistance value is extremely close, the process proceeds to step ST22, and if there is still a difference from the target value, step ST19. Proceed to. Then, in step 19, the resistance value of the heating resistor is measured again by the same means as described above, and the applied voltage for lowering the resistance value obtained in step ST20 to the target value is determined. Next, in step ST21, a voltage pulse is sent from the pulse generator 5 to apply a voltage to the heating resistor. If the applied voltage in this case has the same value as the voltage of the first time, the resistance value of the heating resistor can be slightly decreased. In this way, the resistance value of the heating resistor can be brought close to the target value with high accuracy. Below, step ST
The processes after step ST15 are repeated until 22 detects the end of trimming of all dots.
なお、上記実施例では1つのサンプルに対して少なくと
も3回の電圧パルスの印加を行つて抵抗値降下曲線を近
似するものを示したが、抵抗値に変化が現われ始める印
加電圧の境界値V0を25Vとして固定的に与えてしま
えば2回の電圧パルス印加で抵抗値降下曲線を近似する
ことも可能である。In the above-described embodiment, the voltage pulse is applied at least three times to one sample to approximate the resistance drop curve, but the boundary value V 0 of the applied voltage at which the resistance value starts to change. It is also possible to approximate the resistance value drop curve by applying the voltage pulse twice if 25 V is fixedly applied.
また、上記実施例では電圧パルスに所定数連続したパル
ス列を用いたが単一パルスであつてもよく、上記実施例
と同様の効果を奏する。Further, in the above-mentioned embodiment, a pulse train in which a predetermined number of continuous pulse trains are used is used.
以上のように、この発明によれば、発熱抵抗体中からサ
ンプルを複数選び、電圧値の異なる電圧パルスを低いも
のから順次前記サンプルに印加し、各印加電圧と抵抗変
化の関係を示す抵抗降下曲線を求めると共に、その抵抗
降下曲線を1回の電圧パルスの印加で発熱抵抗体の抵抗
値が目標値より降下しないように補正し、前記発熱抵抗
体に印加する前記電圧パルスの電圧値を、その発熱抵抗
体の初期抵抗値に基づいて前記補正された抵抗降下曲線
を用いて決定するように構成したので発熱抵抗体の抵抗
値を過剰に降下させてしまうことがなく、しかも短時間
に均一化できるという効果がある。As described above, according to the present invention, a plurality of samples are selected from among the heating resistors, voltage pulses having different voltage values are sequentially applied to the sample from the lower one, and the resistance drop showing the relationship between each applied voltage and the resistance change. A curve is obtained, and the resistance drop curve is corrected so that the resistance value of the heating resistor does not drop below a target value by the application of one voltage pulse, and the voltage value of the voltage pulse applied to the heating resistor is Since the resistance value of the heating resistor is determined based on the initial resistance value of the heating resistor, the resistance value of the heating resistor does not drop excessively and is uniform in a short time. There is an effect that can be converted.
第1図はこの発明の一実施例によるサーマルヘツドの製
造方法を示すフローチヤート、第2図はその抵抗値降下
曲線の一例を示す線図、第3図は発熱抵抗体の抵抗値の
減少を示す線図、第4図は抵抗値降下曲線の他の例を示
す線図、第5図は従来のサーマルヘツドの製造方法の一
例を示すフローチヤート、第6図はそれを実施するため
の装置の一例を示すブロツク図である。 1はサーマルヘツド、A,A′は抵抗値降下曲線。FIG. 1 is a flow chart showing a method of manufacturing a thermal head according to an embodiment of the present invention, FIG. 2 is a diagram showing an example of a resistance drop curve thereof, and FIG. 3 is a graph showing a decrease in resistance value of a heating resistor. FIG. 4 is a diagram showing another example of the resistance drop curve, FIG. 5 is a flow chart showing an example of a conventional method for manufacturing a thermal head, and FIG. 6 is an apparatus for carrying it out. It is a block diagram showing an example. 1 is a thermal head, A and A'are resistance drop curves.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 尾崎 裕 兵庫県尼崎市塚口本町8丁目1番1号 三 菱電機株式会社通信機製作所内 (72)発明者 高瀬 弥平 兵庫県尼崎市塚口本町8丁目1番1号 三 菱電機株式会社通信機製作所内 (56)参考文献 特開 昭61−131404(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yu Ozaki 8-1-1 Tsukaguchi Honcho, Amagasaki City, Hyogo Prefecture Sanryo Electric Co., Ltd. Communication Machinery Works (72) Inventor Yahei Takase 8-chome, Tsukaguchi Honcho, Amagasaki City, Hyogo Prefecture No. 1-1 Sanryo Electric Co., Ltd. Communication Equipment Factory (56) Reference JP-A-61-131404 (JP, A)
Claims (1)
パルスを印加し、その抵抗値を降下させて均一化するサ
ーマルヘッドの抵抗値調整装置において、前記各々の発
熱抵抗体に接続されるプロービング装置と、そのプロー
ビング装置に接続され前記発熱抵抗体の選択を行うと共
に、パルス発生器によるその発熱抵抗体への電圧パルス
の印加と抵抗計によるその発熱抵抗体の抵抗測定とを切
り換えるスイッチ回路と、前記発熱抵抗体中からサンプ
ルを複数選び、電圧値の異なる電圧パルスを低いものか
ら順次前記サンプルに印加し、各印加電圧と抵抗変化の
関係を示す抵抗降下曲線を求めると共に、その抵抗降下
曲線を1回の電圧パルスの印加で発熱抵抗体の抵抗値が
目標値より降下しないように補正し、前記発熱抵抗体に
印加する前記電圧パルスの電圧値を、その発熱抵抗体の
初期抵抗値に基づいて前記補正された抵抗降下曲線を用
いて決定する制御演算部とを備えたことを特徴とするサ
ーマルヘッドの抵抗値調整装置。1. A resistance adjusting device for a thermal head, wherein a voltage pulse is applied to each heating resistor of a thermal head to lower and equalize the resistance value thereof, and a probing connected to each heating resistor. And a switch circuit connected to the probing device for selecting the heating resistor and switching between application of a voltage pulse to the heating resistor by a pulse generator and resistance measurement of the heating resistor by an ohmmeter. , A plurality of samples are selected from the heating resistors, voltage pulses having different voltage values are sequentially applied to the sample from the lowest value, and a resistance drop curve showing the relationship between each applied voltage and resistance change is obtained and the resistance drop curve is obtained. The voltage applied to the heating resistor is corrected so that the resistance value of the heating resistor does not drop below a target value with a single voltage pulse application. The voltage value of the pulse, the resistance value adjusting device of a thermal head is characterized in that a control arithmetic unit which determines using the corrected resistance drop curve based on the initial resistance value of the heating resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61204009A JPH06417B2 (en) | 1986-08-29 | 1986-08-29 | Thermal head resistance adjustment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61204009A JPH06417B2 (en) | 1986-08-29 | 1986-08-29 | Thermal head resistance adjustment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6359556A JPS6359556A (en) | 1988-03-15 |
| JPH06417B2 true JPH06417B2 (en) | 1994-01-05 |
Family
ID=16483258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61204009A Expired - Lifetime JPH06417B2 (en) | 1986-08-29 | 1986-08-29 | Thermal head resistance adjustment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06417B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131404A (en) * | 1984-11-29 | 1986-06-19 | ロ−ム株式会社 | Pulse trimming for thermal head |
-
1986
- 1986-08-29 JP JP61204009A patent/JPH06417B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6359556A (en) | 1988-03-15 |
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