JPH068056B2 - Method of manufacturing thermal head - Google Patents
Method of manufacturing thermal headInfo
- Publication number
- JPH068056B2 JPH068056B2 JP61204004A JP20400486A JPH068056B2 JP H068056 B2 JPH068056 B2 JP H068056B2 JP 61204004 A JP61204004 A JP 61204004A JP 20400486 A JP20400486 A JP 20400486A JP H068056 B2 JPH068056 B2 JP H068056B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- resistance
- value
- resistance value
- thermal head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/35—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads providing current or voltage to the thermal head
- B41J2/355—Control circuits for heating-element selection
Landscapes
- Electronic Switches (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は厚膜形サーマルヘツドの製造方法、特にその
発熱抵抗体の抵抗値の均一化に関するものである。The present invention relates to a method for manufacturing a thick film type thermal head, and more particularly to uniforming the resistance value of its heating resistor.
厚膜形のサーマルヘツドは、ペースト状の抵抗材料をス
クリーン印刷法等によつて所定のパターンに印刷し、そ
の後焼成することで発熱抵抗体を形成している。そのた
め厚膜形のサーマルヘツドは比較的短い製造工程によつ
て安価に製造できる反面、発熱抵抗体の抵抗値のばらつ
きが大きくなる欠点を持ち合せている。この発熱抵抗体
の抵抗値のばらつきは印字等の質に直接影響を及ぼすも
のであるため、厚膜形のサーマルヘツドの製造において
は発熱抵抗体の抵抗値の均一化は極めて重要なフアクタ
である。この発熱抵抗体の抵抗値の均一化としては、発
熱抵抗体形成後、各発熱抵抗体に個別に比較的高圧の電
圧パルスを印加するとその抵抗値が低下するという現象
を利用したトリミング処理がある。In the thick film type thermal head, a heating resistor is formed by printing a paste-like resistance material in a predetermined pattern by a screen printing method or the like and then firing it. Therefore, the thick film type thermal head can be manufactured at a low cost by a relatively short manufacturing process, but has a drawback that the resistance value of the heating resistor varies greatly. Since the variation in the resistance value of the heating resistor directly affects the quality of printing etc., it is an extremely important factor to make the resistance value of the heating resistor uniform in the production of the thick film type thermal head. . To make the resistance values of the heating resistors uniform, there is a trimming process utilizing the phenomenon that the resistance value decreases when a relatively high voltage pulse is individually applied to each heating resistor after the heating resistors are formed. .
第4図は例えば特開昭61−83053号公報に示され
た従来のサーマルヘツドの製造方法を示すフローチヤー
トである。図において、ST1は初期設定のステツプ、
ST2は前記ステツプST1に続くプローバ及びスイツ
チングのステツプ、ST3は前記スタツプST2に続く
電圧パルス印加のステツプ、ST4は前記ステツプST
3に続く抵抗値測定のステツプ、ST5は前記ステツプ
ST4に続く前回データとの比較のステツプ、ST6は
前記ステツプST5に続く抵抗値減少検出のステツプ、
ST7は前記ステツプST6に続くトリミングの全ドツ
ト終了検出のステツプ、ST8は前記ステツプST5よ
り分岐したプローブのステツプ、ST9は前記ステツプ
ST6より分岐した電圧パルスの電圧調整のステツプで
あり、前記ステツプST7の分岐からはステツプST2
へ、ステツプST8からはステツプST4へ、ステツプ
ST9からはステツプST3へ、それぞれ処理が戻され
る。FIG. 4 is a flow chart showing a conventional method for manufacturing a thermal head disclosed in, for example, Japanese Patent Laid-Open No. 61-83053. In the figure, ST1 is the default step,
ST2 is a prober and switching step following step ST1, ST3 is a voltage pulse application step following step ST2, and ST4 is the step ST.
3 is a resistance value measurement step, ST5 is a step of comparing with previous data following step ST4, ST6 is a step of detecting a resistance value decrease following step ST5,
ST7 is a step for detecting the end of all the trimming dots following step ST6, ST8 is a probe step branched from step ST5, and ST9 is a step for voltage adjustment of the voltage pulse branched from step ST6. From the branch, step ST2
The processing is returned from step ST8 to step ST4, and from step ST9 to step ST3.
次に動作について説明する。まず、ステツプST1にお
いて、トリミングする発熱抵抗体に加える電圧パルスの
初期値、トリミングの目標値等の初期条件が設定され
る。次に、ステツプST2において、サーマルヘツドに
プロービングし、トリミングするドツトを選択してその
発熱抵抗体を電圧パルス発生手段に接続し、ステツプS
T3で前記ステツプ1で設定された初期値の電圧パルス
を印加する。次にステツプST4でその発熱抵抗体の抵
抗値を測定し、ステツプST5において抵抗値が減少し
たか否かを識別し、していなければプローブの接触不良
とみなしてステツプST8にてプロービングをやり直
し、ステツプST4に戻つて再度抵抗値の測定を行な
う。抵抗値が減少していればステツプST6にてステツ
プST1で設定されたトリミングの目標値と比較し、目
標値より小さくなつていなければ、ステツプST9にて
電圧パルスの電圧値をΔVだけ上昇させててステツプS
T3に戻り、電圧パルスの再印加を行なう。この処理は
その発熱抵抗体の抵抗値が前記目標値より小さくなるま
で繰返され、目標値より小さくなればそのドツトの発熱
抵抗体のトリミングを終了してステツプST7へ移る。
ステツプST7では全ドツトのトリミングが終了したか
否かを識別しており、全ドツトのトリミングが終了して
いなければ処理をステツプST2へ戻す。ステツプST
2では新たなドツトが選択されてその発熱抵抗体が電圧
パルス発生手段に接続され、同様の処理が全ドツトのト
リミング終了まで繰返される。Next, the operation will be described. First, in step ST1, initial conditions such as an initial value of a voltage pulse applied to a heating resistor to be trimmed and a trimming target value are set. Next, in step ST2, the thermal head is probed, the dot to be trimmed is selected, and the heating resistor is connected to the voltage pulse generating means.
At T3, the voltage pulse having the initial value set in the step 1 is applied. Next, in step ST4, the resistance value of the heating resistor is measured, and in step ST5 it is discriminated whether or not the resistance value has decreased. If not, it is considered that the probe has a poor contact, and the probing is repeated in step ST8. After returning to step ST4, the resistance value is measured again. If the resistance value has decreased, it is compared with the trimming target value set in step ST1 in step ST6. If it is not smaller than the target value, the voltage value of the voltage pulse is increased by ΔV in step ST9. Step S
Returning to T3, the voltage pulse is reapplied. This process is repeated until the resistance value of the heating resistor becomes smaller than the target value, and when it becomes smaller than the target value, trimming of the dot heating resistor is finished and the process proceeds to step ST7.
In step ST7, it is identified whether or not the trimming of all the dots has been completed. If the trimming of all the dots has not been completed, the process returns to step ST2. Step ST
In step 2, a new dot is selected, the heating resistor is connected to the voltage pulse generating means, and the same process is repeated until the trimming of all dots is completed.
第5図はこの発熱抵抗体の抵抗値の減少を示す線図であ
り、トリミング前にはR1,R2,R3と大きくばらつい
ていた抵抗値が、目標値R0よりわずかに低い。狭い範
囲内に均一化される。図においてVsは前記電圧パルス
の初期値であり、電圧パルスの印加によつて発熱抵抗体
の抵抗値が減少をはじめる境界電圧が通常25V近傍に
あるため例えば25Vに設定されている。また、ΔVは
ステツプST9による電圧パルスの電圧値の増し分であ
り、発熱抵抗体の抵抗値が減少し過ぎないように例えば
2.5Vに設定して徐々に抵抗値を減少させている。FIG. 5 is a diagram showing a decrease in the resistance value of the heating resistor, and the resistance value, which largely varies from R 1 , R 2 , and R 3 before trimming, is slightly lower than the target value R 0 . It is homogenized within a narrow range. In the figure, V s is the initial value of the voltage pulse, and is set to, for example, 25 V because the boundary voltage at which the resistance value of the heating resistor begins to decrease due to the application of the voltage pulse is usually around 25 V. Further, ΔV is an increment of the voltage value of the voltage pulse by step ST9, and is set to, for example, 2.5 V so that the resistance value of the heating resistor does not decrease too much, and the resistance value is gradually decreased.
従来のサーマルヘツド製造方法は以上のように構成され
ているので、1ドツトの発熱抵抗体のトリミングには2
0〜30回の電圧パルスの印加、及び抵抗値の測定をし
なければならず、発熱抵抗体の抵抗値の均一化には多大
な時間を要するという問題点があつた。Since the conventional thermal head manufacturing method is configured as described above, it takes two steps to trim a one-dot heating resistor.
The voltage pulse must be applied 0 to 30 times and the resistance value must be measured, which requires a great deal of time to equalize the resistance value of the heating resistor.
この発明は上記のような問題点を解消するためになされ
たもので、発熱抵抗体の抵抗値の均一化に多大の時間を
必要とすることのないサーマルヘツドの製造方法を得る
ことを目的とする。The present invention has been made to solve the above problems, and an object thereof is to obtain a method for manufacturing a thermal head that does not require a large amount of time to equalize the resistance value of the heating resistor. To do.
この発明に係るサーマルヘツドの製造方法は、サーマル
ヘツドのドツト中よりいくつかのサンプルを選定してそ
れに電圧値の異なるいくつかの電圧パルスを低いものか
ら順に印加し、その都度発熱抵抗体の抵抗変化を測定し
て抵抗値降下曲線を近似し、各ドツトのトリミングに際
しては、まずその発熱抵抗体の抵抗値を測定して、必要
な抵抗値の降下量から前記抵抗値降下曲線に基づいて印
加する電圧パルスの電圧値を決定するものである。The manufacturing method of the thermal head according to the present invention is such that some samples are selected from the thermal head dots and several voltage pulses having different voltage values are sequentially applied to the samples from the lower one, and the resistance of the heating resistor is changed each time. Measure the change to approximate the resistance drop curve, and when trimming each dot, first measure the resistance value of the heating resistor and apply it based on the resistance drop curve from the required resistance drop amount. The voltage value of the voltage pulse to be applied is determined.
この発明におけるサーマルヘツドの製造方法は、当該サ
ーマルヘツド内のサンプルドツトの測定によつて抵抗値
降下曲線を近似し、トリミングに際してこの抵抗値降下
曲線を用いて、測定したそのドツトの発熱抵抗体の抵抗
値より印加する電圧パルスの電圧値を決定して、1回の
電圧パルスの印加で発熱抵抗体の抵抗値を目標値に近い
ものとする。The manufacturing method of the thermal head in this invention approximates the resistance drop curve by measuring the sample dots in the thermal head, and uses this resistance drop curve during trimming to measure the heating resistor of the dot. The voltage value of the voltage pulse to be applied is determined from the resistance value, and the resistance value of the heating resistor is made close to the target value by applying the voltage pulse once.
以下、この発明の一実施例を図について説明する。第1
図において、ST11は初期設定のステツプ、ST12
は前記ステツプST11に続くサンプルの抵抗変化測定
のステツプ、ST13は前記ステツプST12に続く抵
抗値降下曲線近似のステツプ、ST14は前記ステツプ
ST13に続く抵抗値測定のステツプ、ST15は前記
ステツプST14に続く印加電圧決定のステツプ、ST
16は前記ステツプST15に続く電圧パルス印加のス
テツプ、ST17は前記ステツプST16に続くトリミ
ングの全ドツト終了検出のステツプであり、このステツ
プST17の分岐からはステツプST14に処理が戻さ
れる。An embodiment of the present invention will be described below with reference to the drawings. First
In the figure, ST11 is an initial setting step, ST12
Is a step of measuring the resistance change of the sample following the step ST11, ST13 is a step of approximating a resistance drop curve following the step ST12, ST14 is a step of measuring the resistance value following the step ST13, and ST15 is an application following the step ST14. Voltage determination step, ST
Reference numeral 16 is a step of applying a voltage pulse following the step ST15, ST17 is a step of detecting all dot end of trimming subsequent to the step ST16, and the processing is returned from the branch of the step ST17 to the step ST14.
第2図はこの発明のサーマルヘツドの製造方法を実施す
る装置の一例を示すブロツク図であり、図において、1
はトリミング処理が行なわれるサーマルヘツド、2はこ
のサーマルヘツド1の各発熱抵抗体の端子にプローブを
押し当てるプロービング装置、3はプロービング装置2
に接続されて前記発熱抵抗体の選択を行なうリレー網、
4はリレー網3に接続されて電圧パルスの印加と抵抗値
の測定とを切り換えるスイツチ、5はスイツチ4の一方
に接続されて指定された電圧値の電圧パルスを送出する
パルス発生器、6はスイツチ4の他方に接続された抵抗
計、7は入出力部8、中央処理装置(以下、CPUとい
う)9、メモリ10、キーボード11等を備えて、前記
諸装置の制御を行なうとともに所要の演算処理を行なう
制御演算部、12はこの制御演算部7に接続されたプリ
ンタである。FIG. 2 is a block diagram showing an example of an apparatus for carrying out the thermal head manufacturing method of the present invention.
Is a thermal head on which trimming processing is performed, 2 is a probing device for pressing a probe against the terminals of each heating resistor of the thermal head 1, and 3 is a probing device 2.
A relay network which is connected to and selects the heating resistor,
A switch 4 is connected to the relay network 3 and switches between application of a voltage pulse and measurement of a resistance value. Reference numeral 5 is a pulse generator connected to one of the switches 4 for sending a voltage pulse of a specified voltage value. An ohmmeter connected to the other side of the switch 4, an input / output unit 8, a central processing unit (hereinafter referred to as CPU) 9, a memory 10, a keyboard 11 and the like are provided to control the above-mentioned various devices and perform necessary calculations. A control calculation unit 12 for performing processing is a printer connected to the control calculation unit 7.
次に動作について説明する。第3図は前記抵抗値降下曲
線の一例を示す線図であり、図中の実線Yがその抵抗値
降下曲線で、横軸には電圧パルスによる印加電圧値が、
縦には電圧パルス印加による発熱抵抗体の抵抗変化率が
目盛られている。実験の結果、第3図の縦軸を抵抗変化
率にして、初期の抵抗値から何%降下したかをプロツト
すると、第3図に破線で示す如く、初期の抵抗値には関
係なくほぼ一定の曲線Y上をたどり、その曲線Yは
(1)式で近似できることがわかつた。Next, the operation will be described. FIG. 3 is a diagram showing an example of the resistance drop curve. The solid line Y in the figure is the resistance drop curve, and the horizontal axis shows the applied voltage value by the voltage pulse.
The vertical axis shows the rate of change in resistance of the heating resistor due to the application of a voltage pulse. As a result of the experiment, when plotting the percentage change from the initial resistance value by plotting the resistance change rate on the vertical axis of FIG. 3, as shown by the broken line in FIG. 3, it is almost constant regardless of the initial resistance value. It was found that the curve Y can be approximated by the equation (1) by tracing the curve Y of
なお、(1)式中、R0は発熱抵抗体の初期の抵抗値、
V0は抵抗値に変化が現われはじめる印加電圧の境界
値、ΔVは印加電圧の変化ステツプ、α,βはサーマル
ヘツドの構造、ドツト密度等で決まる定数である。 In the equation (1), R 0 is the initial resistance value of the heating resistor,
V 0 is the boundary value of the applied voltage at which the resistance value starts to change, ΔV is the step of changing the applied voltage, and α and β are constants determined by the thermal head structure, dot density, and the like.
また、別の実験の結果、所定の電圧値の電圧パルスを1
回だけ印加した場合の抵抗減少率は、第3図の如く電圧
値を暫増させながら何回も電圧パルスを印加した場合の
同一電圧値のそれと同等の値を示すこともわかつた。こ
の発明はこれらの実験結果に基づくものである。In addition, as a result of another experiment, a voltage pulse of a predetermined voltage value is set to 1
It was also known that the resistance reduction rate when applied only once showed a value equivalent to that of the same voltage value when the voltage pulse was applied many times while temporarily increasing the voltage value as shown in FIG. The present invention is based on the results of these experiments.
この実施例では、まず、ステツプ11で初期設定が行な
われ、次いでステツプ12でサンプルの抵抗変化測定が
行なわれる。即ち、リレー網3を制御してサーマルヘツ
ド1のサンプルとして指定されたドツトの発熱抵抗体を
選択し、スイツチ4を切り換えて抵抗計6へ接続して抵
抗値を測定し、その測定値を制御演算部7へ送り、制御
演算部7のCPU9はこれをメモリ10へ格納する。次
にスイツチ4を切り換えてパルス発生器5より所定の電
圧値の電圧パルスを前記抵抗発熱体に印加する。ここ
で、この電圧パルスは例えば幅が2μsecのパルスが1
5個周期50μsecで連続するパルス列である。次に、
再度スイツチ4を切り換えて、この電圧パルスが印加さ
れた発熱抵抗体を抵抗計6に接続して抵抗値を測定し、
制御演算部7へ送る。制御演算部7のCPU9はそれを
印加した電圧パルスの電圧値とともにメモリ10に格納
する。以下、同様にして、電圧パルスの電圧値を適宜上
昇させながらこれらの処理を繰返す。この処理は少くと
も3回繰返して実行され、リレー網3を切り換えていく
つかのサンプルについて実行される。In this embodiment, first, the initial setting is performed in step 11, and then the resistance change measurement of the sample is performed in step 12. That is, the relay network 3 is controlled to select the dot heating resistor designated as the sample of the thermal head 1, the switch 4 is switched and the resistance value is measured by connecting to the resistance meter 6, and the measured value is controlled. The data is sent to the calculation unit 7, and the CPU 9 of the control calculation unit 7 stores it in the memory 10. Next, the switch 4 is switched to apply a voltage pulse of a predetermined voltage value from the pulse generator 5 to the resistance heating element. Here, this voltage pulse is, for example, one pulse having a width of 2 μsec.
It is a pulse train that is continuous with five 50 μsec cycles. next,
Switching the switch 4 again, the heating resistor to which this voltage pulse is applied is connected to the resistance meter 6, and the resistance value is measured.
It is sent to the control calculation unit 7. The CPU 9 of the control calculation unit 7 stores it in the memory 10 together with the voltage value of the applied voltage pulse. Thereafter, similarly, these processes are repeated while appropriately increasing the voltage value of the voltage pulse. This process is repeated at least three times, switching the relay network 3 and executing for some samples.
次に、ステツプST13において、このようにして測定
された抵抗変化に基づく抵抗値降下曲線の近似が行なわ
れる。即ち、制御演算部7のCPU9はメモリ10に格
納しておいた抵抗変化から、電圧パルスによる各印加電
圧における抵抗変化率ΔR=(R−R0)/R0を求め、
これを前記(1)式に代入する。これによつて各サンプ
ル毎にそれぞれα,β,V0を未知数とする方程式を作
成してこれを解く。ここで、三つの未知数に対して四つ
以上の方程式がある場合にはこれを統計的に処理して解
を得る。得られた解はさらに各サンプル間で統計的に処
理され、得られた定数α,β、境界電圧値V0が(1)
式に代入されて、抵抗変化率ΔRと印加電圧Vとの関係
を示す抵抗値降下曲線が近似される。Next, in step ST13, an approximation of the resistance drop curve based on the resistance change thus measured is performed. That is, the CPU 9 of the control calculation unit 7 obtains the resistance change rate ΔR = (R−R 0 ) / R 0 at each applied voltage by the voltage pulse from the resistance change stored in the memory 10,
This is substituted into the equation (1). As a result, an equation with α, β, and V 0 as unknowns is created for each sample and solved. Here, when there are four or more equations for three unknowns, these are statistically processed to obtain a solution. The obtained solution is further statistically processed between each sample, and the obtained constants α and β and the boundary voltage value V 0 are (1)
Substituting into the equation, the resistance value drop curve showing the relationship between the resistance change rate ΔR and the applied voltage V is approximated.
これで準備段階を終了してステツプST14よりトリミ
ングの処理に入る。まず、ステツプST14において、
リレー網3でトリミングを実施するドツトを選択し、ス
イツチによつてこれを抵抗計6に接続してその抵抗値を
測定する。次に、ステツプST15ではCPU9によつ
て、得られた抵抗値を目標値まで降下させるための抵抗
変化率ΔRnが算出され、さらに前述の抵抗値降下曲線
Yを用いて電圧パルスの印加電圧Vnを決定する。その
様子は第3図に示され、具体的には前記α,β,V0が
代入された関係式に前記ΔRnを代入して印加電圧Vn
を算出する。得られた印加電圧Vnは制御演算部7より
パルス発生器5へ送られる。ステツプST16でスイツ
チ4が切り換えられると、パルス発生器5からは電圧が
Vnの電圧パルスが送出され、トリミングを実施するド
ツトの発熱抵抗体に印加される。これによつて当該発熱
抵抗体の抵抗値は目標値に近い値に降下する。以下ステ
ツプST17が全ドツトのトリミングの終了を検出する
まで、ステツプST14以後の処理が繰返される。This completes the preparatory stage and starts the trimming process from step ST14. First, in step ST14,
A dot to be trimmed is selected by the relay network 3 and is connected to the ohmmeter 6 by a switch to measure its resistance value. Next, in step ST15, the CPU 9 calculates the resistance change rate ΔRn for decreasing the obtained resistance value to the target value, and further uses the resistance value decrease curve Y to determine the applied voltage Vn of the voltage pulse. decide. The situation is shown in FIG. 3. Specifically, the applied voltage Vn is obtained by substituting the ΔRn into the relational expression in which the α, β and V 0 are substituted.
To calculate. The obtained applied voltage Vn is sent from the control calculation unit 7 to the pulse generator 5. When the switch 4 is switched at step ST16, a voltage pulse having a voltage Vn is sent from the pulse generator 5 and applied to the dot heating resistor for trimming. As a result, the resistance value of the heating resistor drops to a value close to the target value. Thereafter, steps ST14 and subsequent steps are repeated until step ST17 detects the end of trimming of all dots.
なお、上記実施例では1つのサンプルに対して、少くと
も3回の電圧パルス印加を行なつて抵抗値降下曲線を近
似するものを示したが、抵抗値に変化が現われはじめる
印加電圧の境界値V0を25Vとして固定的に与えてし
まえば、2回の電圧パルス印加で抵抗値降下曲線を近似
することも可能となる。In the above embodiment, the resistance value drop curve is approximated by applying the voltage pulse at least three times to one sample, but the boundary value of the applied voltage at which the resistance value starts to change. If V 0 is fixedly set to 25 V, the resistance value drop curve can be approximated by applying the voltage pulse twice.
また、上記実施例では電圧パルスに所定数連続したパル
ス列を用いたが単パルスであつてもよく、上記実施例と
同様の効果を奏する。Further, in the above-described embodiment, a pulse train in which a predetermined number of continuous pulses are used is used, but it may be a single pulse, and the same effect as that of the above-described embodiment is obtained.
以上のように、この発明によれば、少ないサンプリング
の抵抗変化を測定して抵抗値降下曲線を近似し、トリミ
ングに際しては、そのドツトの発熱抵抗体の抵抗値を測
定して、前記抵抗値降下曲線を用いて電圧パルスの電圧
値を決定するように構成したので、各ドツト毎に1回の
電圧パルスの印加によつてトリミングが完了するため、
発熱抵抗体の抵抗値の均一化に要する時間を大幅に削減
できる効果がある。この効果はフアクシミリ用サーマル
ヘツドの如く、1000ドツトあるいはそれ以上の発熱
抵抗体を有するような、多ドツトのサーマルヘツドに適
用した場合、特に顕著である。As described above, according to the present invention, the resistance drop curve is approximated by measuring the resistance change of a small sampling, and at the time of trimming, the resistance value of the heating resistor of the dot is measured to reduce the resistance drop. Since the voltage value of the voltage pulse is determined using a curve, trimming is completed by applying the voltage pulse once for each dot.
This has the effect of significantly reducing the time required to equalize the resistance values of the heating resistors. This effect is particularly remarkable when applied to a multi-dot thermal head having a heating resistor of 1000 dots or more, such as a thermal head for facsimile.
第1図はこの発明の一実施例によるサーマルヘツドの製
造方法を示すフローチヤート、第2図はそれを実施する
ための装置の一例を示すブロツク図、第3図はその抵抗
値降下曲線の一例を示す線図、第4図は従来のサーマル
ヘツドの製造方法を示すフローチヤート、第5図はその
発熱抵抗体の抵抗値の減少を示す線図である。 1はサーマルヘツド、2はプロービング装置、3はリレ
ー網、4はスイツチ、5はパルス発生器、6は抵抗計、
7は制御演算部。FIG. 1 is a flow chart showing a method of manufacturing a thermal head according to an embodiment of the present invention, FIG. 2 is a block diagram showing an example of an apparatus for carrying out the method, and FIG. 3 is an example of a resistance drop curve thereof. FIG. 4 is a flow chart showing a conventional method for manufacturing a thermal head, and FIG. 5 is a diagram showing a decrease in the resistance value of the heating resistor. 1 is a thermal head, 2 is a probing device, 3 is a relay network, 4 is a switch, 5 is a pulse generator, 6 is an ohmmeter,
7 is a control calculation unit.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 尾崎 裕 兵庫県尼崎市塚口本町8丁目1番1号 三 菱電機株式会社通信機製作所内 (72)発明者 高瀬 弥平 兵庫県尼崎市塚口本町8丁目1番1号 三 菱電機株式会社通信機製作所内 (56)参考文献 特開 昭61−131404(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yu Ozaki 8-1-1 Tsukaguchi Honcho, Amagasaki City, Hyogo Prefecture Sanryo Electric Co., Ltd. Communication Machinery Works (72) Inventor Yahei Takase 8-chome, Tsukaguchi Honcho, Amagasaki City, Hyogo Prefecture No. 1-1 Sanryo Electric Co., Ltd. Communication Equipment Factory (56) Reference JP-A-61-131404 (JP, A)
Claims (1)
ルヘツドの前記ドツトの発熱抵抗体の各々に電圧パルス
を印加し、そのドツトの発熱抵抗体の抵抗値を降下させ
て均一化するサーマルヘツドの製造方法において、前記
ドツトの発熱抵抗体中からサンプルドツトを選び、電圧
値の異なる電圧パルスを低圧のものから順次、前記サン
プルドツトとして選ばれたドツトの発熱抵抗体に印加し
て、印加電圧と抵抗値変化の関係を示す抵抗値降下曲線
を近似し、前記各ドツトの発熱抵抗体へ印加する前記電
圧パルスの電圧値を、当該ドツトの発熱抵抗体の初期の
抵抗値に基づいて前記抵抗値降下曲線を用いて決定する
ことを特徴とするサーマルヘツドの製造方法。1. A thermal head having a plurality of dots of heating resistors, wherein a voltage pulse is applied to each of the dots of the heating resistors, and the resistance value of the dots of the heating resistors is lowered to be uniform. In the method for manufacturing a head, a sample dot is selected from among the heating resistors of the dots, and voltage pulses having different voltage values are sequentially applied to the heating resistors of the dots selected as the sample dots, and applied. Approximate the resistance drop curve showing the relationship between the voltage and the resistance change, the voltage value of the voltage pulse applied to the heating resistor of each dot, based on the initial resistance value of the heating resistor of the dot A method of manufacturing a thermal head, which is characterized in that it is determined using a resistance drop curve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61204004A JPH068056B2 (en) | 1986-08-29 | 1986-08-29 | Method of manufacturing thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61204004A JPH068056B2 (en) | 1986-08-29 | 1986-08-29 | Method of manufacturing thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6359551A JPS6359551A (en) | 1988-03-15 |
| JPH068056B2 true JPH068056B2 (en) | 1994-02-02 |
Family
ID=16483179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61204004A Expired - Lifetime JPH068056B2 (en) | 1986-08-29 | 1986-08-29 | Method of manufacturing thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH068056B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140142816A (en) * | 2013-06-05 | 2014-12-15 | 주식회사 엘지화학 | Supported-catalyst for synthesizing carbon nanostructures, method for preparing thereof, and method for preparing secondary structures of carbon nanostructures using same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131404A (en) * | 1984-11-29 | 1986-06-19 | ロ−ム株式会社 | Pulse trimming for thermal head |
-
1986
- 1986-08-29 JP JP61204004A patent/JPH068056B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140142816A (en) * | 2013-06-05 | 2014-12-15 | 주식회사 엘지화학 | Supported-catalyst for synthesizing carbon nanostructures, method for preparing thereof, and method for preparing secondary structures of carbon nanostructures using same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6359551A (en) | 1988-03-15 |
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| EXPY | Cancellation because of completion of term |