JPH0820276B2 - Physical quantity measurement method - Google Patents
Physical quantity measurement methodInfo
- Publication number
- JPH0820276B2 JPH0820276B2 JP61266425A JP26642586A JPH0820276B2 JP H0820276 B2 JPH0820276 B2 JP H0820276B2 JP 61266425 A JP61266425 A JP 61266425A JP 26642586 A JP26642586 A JP 26642586A JP H0820276 B2 JPH0820276 B2 JP H0820276B2
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- 238000000691 measurement method Methods 0.000 title description 5
- 238000005259 measurement Methods 0.000 claims description 136
- 238000000034 method Methods 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 1
- 230000008859 change Effects 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010408 sweeping Methods 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、物理量測定において任意測定点における測
定値が、時間変化を伴う測定値を得る測定対象に対し正
確にかつ速やかに測定を行うことができる物理量測定方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is to accurately and promptly perform measurement on a measurement target at which a measurement value at an arbitrary measurement point in a physical quantity measurement obtains a measurement value with time change. The present invention relates to a physical quantity measuring method capable of
従来、任意測定点においての測定値が時間変化を伴う
測定対象に対する測定方法は、主に以下の(a)、
(b)2つの方法により行われている。Conventionally, a measurement method for a measurement object in which a measurement value at an arbitrary measurement point changes with time is mainly the following (a),
(B) It is performed by two methods.
(a)測定点の掃引を一定の速さで行い、その速さを種
々変えた、各々の測定結果の差異から各測定点での測定
値の時間変化を関連づけて、測定結果の真値を推定す
る。(A) Sweeping of measurement points is performed at a constant speed, the speed is variously changed, the time change of the measurement value at each measurement point is associated with the difference between the measurement results, and the true value of the measurement result is obtained. presume.
(b)離散的に測定点を選択して、各測定点で測定値の
時間変化が終了するまで待ち測定結果を得て、離散的測
定点間の測定結果の真値を推定する。(B) The measurement points are discretely selected, waiting measurement results are obtained until the time change of the measurement values ends at each measurement point, and the true value of the measurement results between the discrete measurement points is estimated.
前記、従来の技術の(a)、(b)各々について問題
点を記す。The problems of each of the above-mentioned conventional techniques (a) and (b) will be described.
(a)種々の速さで、測定点の掃引を行うために、各測
定点での測定値の時間変化に左右されて測定点の掃引の
速さが異なると、測定結果が異なる。これは第7図に示
すように、ある測定点で測定値が時間経過にしたがって
変化する場合、第7図中の測定値の時間軌跡中の各点に
表される測定値は、測定値を得る時間によって異なるか
らである。したがって、種々の速さの掃引を行って、測
定結果を推定することになり、測定結果は決して真値と
ならない欠点を有する。また、測定点を往復させる掃引
で測定を行うと、極めて遅い掃引を行わないかぎり、測
定値の時間変化に左右されて、往路、復路で測定結果が
異なるため、あたかも測定対象がヒステリシスを持つか
のような誤った測定結果を得てしまうという欠点も有す
る。(A) Since the measurement points are swept at various speeds, if the sweep speed of the measurement points is different depending on the time change of the measurement value at each measurement point, the measurement result is different. As shown in FIG. 7, when the measured value at a certain measurement point changes over time, the measured value represented at each point in the time locus of the measured value in FIG. This is because it depends on the time to obtain it. Therefore, there is a drawback that the measurement result is estimated by performing sweeping at various speeds, and the measurement result never becomes a true value. Also, if the measurement is performed with a sweep that reciprocates the measurement point, unless the sweep is performed at an extremely slow rate, the measurement results will differ depending on the forward and backward passes, depending on the time change of the measured value. There is also a drawback that an erroneous measurement result such as is obtained.
(b)離散的に測定点を選択して測定値の時間変化が終
了するまで待って測定値を得るために、正確な測定値を
得られるが、離散的な測定点の間の測定値を得ることが
できず、このような間の測定点で測定値が急峻な変化を
する場合に、測定結果が真値とならない欠点を有する。(B) Accurate measurement values can be obtained in order to obtain measurement values by selecting measurement points discretely and waiting until the time change of the measurement values is completed, but measure values between discrete measurement points. It cannot be obtained, and there is a drawback that the measurement result does not become a true value when the measurement value changes abruptly at such a measurement point.
本発明は、従来技術の欠点を除去し測定値(y)の時
間(t)における変化(dy/dt)に左右されずに、測定
値の時間的変化を取り逃がすことなく正確な測定結果を
速やかに得ることのできる測定方法を提供するものであ
る。INDUSTRIAL APPLICABILITY The present invention eliminates the drawbacks of the prior art, and does not depend on the change (dy / dt) in the time (t) of the measured value (y), and the accurate measured result can be promptly obtained without missing the temporal change of the measured value. It provides a measurement method that can be obtained.
測定点xに対応する測定値yから時間基準値dtをもと
に測定値yの時間微分量dy/dtを取り出し、このdy/dtを
用いて以下に述べる測定点xの掃引の速さdx/dtを定
め、例えば、このdx/dtを積分することで、測定点xを
定める。The time differential amount dy / dt of the measured value y is extracted from the measured value y corresponding to the measured point x based on the time reference value dt, and the sweep speed dx of the measured point x described below is used by using this dy / dt. / dt is determined and, for example, the measurement point x is determined by integrating this dx / dt.
測定値yの時間微分値dy/dtから測定点xの掃引の速
さである時間微分量dx/dtを定めるには、例えば、測定
点xと測定値yを座標軸とするXYレコーダの測定結果の
線分Lを描く速さdL/dtが一定になる関係すなわち、(d
L/dt)2=(dx/dt)2+(dy/dt)2=一定となる関係
から導かれる。この関係は厳密に一定である必要はな
く、(dx/dt)+(dy/dt)=一定、あるいは、(dx/d
t)・(dy/dt)=一定、(dx/dt)U(和集合)、(dy/
dt)=一定などdx/dtとdy/dtの関係が、dy/dtが大なる
時dx/dtが小か、その逆にdy/dtが小なる時dx/dtが大な
る関係であればよい。すなわち、前記の測定結果の線分
を描く速さがほぼ一定になる関係から測定点の掃引の速
さを定める。To determine the time differential amount dx / dt, which is the sweep speed of the measurement point x from the time differential value dy / dt of the measurement value y, for example, the measurement result of an XY recorder with the measurement point x and the measurement value y as the coordinate axes. The relation that the speed dL / dt of drawing the line segment L of is constant, that is, (d
L / dt) 2 = (dx / dt) 2 + (dy / dt) 2 = constant. This relationship does not have to be strictly constant, (dx / dt) + (dy / dt) = constant, or (dx / d
t) · (dy / dt) = constant, (dx / dt) U (union), (dy /
dt) = constant, etc. If the relationship between dx / dt and dy / dt is such that dx / dt is small when dy / dt is large, or conversely, dx / dt is large when dy / dt is small. Good. That is, the sweep speed of the measurement point is determined from the relationship that the speed of drawing the line segment of the measurement result is almost constant.
測定値yの時間tにおける変化分の大きな測定領域で
は、測定値yの時間微分dy/dtが大きくなり、測定結果
を描く速さdL/dtを関係付ける(dL/dt)2=(dx/dt)
2+(dy/dt)2=一定の関係から、測定点xを掃引す
る速さdx/dtが小さくなり、その結果、測定結果の線分
を描く速さを一定乃至ほぼ一定とするので、例えば、
(dx/dt)2+(dy/dt)2=一定であるからdx/dtは小
さくなり、測定点xの掃引は遅くなる。逆に、測定値y
の時間変化の小さな測定領域では、dy/dtが小さくな
り、測定点xの掃引速さdx/dtを大きくして速やかに掃
引を行う。In the measurement region where the variation of the measurement value y at the time t is large, the time derivative dy / dt of the measurement value y becomes large, and the speed dL / dt for drawing the measurement result is related (dL / dt) 2 = (dx / dt)
From the relationship of 2 + (dy / dt) 2 = constant, the speed dx / dt of sweeping the measurement point x becomes small, and as a result, the speed of drawing the line segment of the measurement result becomes constant or almost constant. For example,
Since (dx / dt) 2 + (dy / dt) 2 = constant, dx / dt becomes small and the sweep of the measurement point x becomes slow. Conversely, the measured value y
In the measurement region in which the change with time is small, dy / dt becomes small, and the sweep speed dx / dt at the measurement point x is increased to perform swept quickly.
〔実施例1〕 第1図は、本発明の測定方法を応用した記録装置の一
例であって、半導体関連産業でダイオード等半導体装置
の製品検査、開発等に広く行われている測定点を電圧
V、測定値を空乏層容量CとしたC−V特性測定に応用
した例である。[Embodiment 1] FIG. 1 is an example of a recording apparatus to which the measuring method of the present invention is applied, in which a voltage is used as a measuring point which is widely used for product inspection and development of semiconductor devices such as diodes in the semiconductor-related industry. This is an example applied to C-V characteristic measurement in which V and measured value are depletion layer capacitance C.
図中11は、C−V特性を測定しようとする測定対象物
としての試料で、この試料11の空乏層容量を測定する容
量計12に接続される。In the figure, reference numeral 11 is a sample as a measurement object for measuring the C-V characteristic, which is connected to a capacitance meter 12 for measuring the depletion layer capacitance of the sample 11.
13は電圧計で、容量計12を介して試料11にバイアス電
圧Vbを印加する。14はC−V特性を記録する記録計で、
電圧値を横軸の入力とし容量計の出力を縦軸の入力とす
る。15は時間微分器で容量計12によって得た容量変化の
時間微分を出力するために容量計12に接続される。16は
比例定数設定器で比例定数kを出力する。17の演算器は
時間微分器15の出力の容量の時間微分と比例定数設定器
16の出力との比例定数を入力して本発明の方法による演
算を行ってバイアス電圧設定のためのバイアス電圧の時
間微分値を出力する。18は試料11に印加するバイアス電
圧を決定するための時間積分器、19は時間積分器18とと
もに試料に印加するバイアス電圧の初期値を設定する初
期値設定器、20は初期値設定器19と時間積分器18との出
力を加算する加算器で試料11に印加する電圧を制御する
ために電圧源13に接続される。21は測定開始スイッチで
測定開始前に(A)側で時間積分器出力を零にし、
(B)側で時間積分器18を働かせ測定開始するためのも
のである。A voltmeter 13 applies a bias voltage Vb to the sample 11 via the capacitance meter 12. 14 is a recorder for recording C-V characteristics,
The voltage value is on the horizontal axis and the output of the capacitance meter is on the vertical axis. A time differentiator 15 is connected to the capacitance meter 12 to output the time derivative of the capacitance change obtained by the capacitance meter 12. 16 is a proportional constant setter which outputs a proportional constant k. The 17 calculator is the time derivative of the output capacity of the time differentiator 15 and the proportional constant setting device.
The proportional constant with respect to the output of 16 is input and the calculation by the method of the present invention is performed to output the time differential value of the bias voltage for setting the bias voltage. 18 is a time integrator for determining the bias voltage applied to the sample 11, 19 is an initial value setter for setting the initial value of the bias voltage applied to the sample together with the time integrator 18, 20 is an initial value setter 19 It is connected to the voltage source 13 to control the voltage applied to the sample 11 with an adder that adds the outputs from the time integrator 18. Reference numeral 21 is a measurement start switch, which sets the time integrator output to zero on the (A) side before starting measurement,
This is to activate the time integrator 18 on the side (B) to start the measurement.
次に装置の作用について述べる。測定開始前、切換器
21は電圧を得る側(A)に設定されていて測定試料11に
は電圧源、3は初期値設定器19によって定められるViの
値のみによってバイアス電圧Vb=Viが印加されている。
容量計12からの出力Cが安定し、その時間微分量dC/dt
が充分小さくなっていなければならない。Next, the operation of the device will be described. Switch before measurement
21 is set to the side for obtaining voltage (A), the voltage source 3 is applied to the measurement sample 11, and the bias voltage Vb = Vi is applied to the measurement sample 11 only by the value of Vi determined by the initial value setting device 19.
The output C from the capacitance meter 12 becomes stable, and its time differential amount dC / dt
Must be small enough.
この状態での本実施例の装置の他の部分の状態は、比
例定数設定器16はkに設定され、前記のごとくdC/dtは
ほぼ零であるから演算器17の出力dV/dtは本実施例では
演算内容をdV/dt=k−dC/dtとしたので、dV/dt=kの
値を出力する。In this state, the other parts of the apparatus of this embodiment have the proportional constant setter 16 set to k, and dC / dt is almost zero as described above. In the embodiment, the calculation content is dV / dt = k−dC / dt, so the value of dV / dt = k is output.
また、測定は、切換器21を時間積分器18の出力を得る
側(B)に切り換えることによって開始される。これに
よって加算器20からは時間積分器18の出力Vと初期値設
定器19の出力Viとの和Vb=V+Viが出力され電圧源から
試料11に電圧が印加される。The measurement is started by switching the switch 21 to the side (B) that obtains the output of the time integrator 18. As a result, the sum Vb = V + Vi of the output V of the time integrator 18 and the output Vi of the initial value setting device 19 is output from the adder 20, and the voltage is applied to the sample 11 from the voltage source.
この測定点電圧Vbによって測定試料の空乏層容量Cが
変化し、この変化が時間積分器15によってdC/dtと出力
されるが、この時間変化dC/dtが大きい場合、演算器17
での演算dV/dt=k−dC/dtによってdV/dtが小さくなり
時間積分器18によって測定点Vが出力されるが、この時
測定点Vの掃引の速さは遅くなる。The depletion layer capacitance C of the measurement sample changes due to this measurement point voltage Vb, and this change is output as dC / dt by the time integrator 15. When this time change dC / dt is large, the calculator 17
In the calculation dV / dt = k−dC / dt, dV / dt becomes small and the measuring point V is output by the time integrator 18. At this time, the sweep speed of the measuring point V becomes slow.
空乏層容量Cの時間変化が小さく、時間変化量dC/dt
が小さい場合には、逆にdV/dtは大きくなり、測定点の
掃引の速さは速くなる。この制御は測定終了まで連続的
に行われる。The time variation of the depletion layer capacitance C is small, and the time variation dC / dt
On the contrary, when is small, dV / dt becomes large and the sweep speed of the measurement point becomes fast. This control is continuously performed until the measurement is completed.
この動作によって以下に述べる効果が生じる。測定対
象である試料を構成する半導体結晶中には「深い準位」
が内在し、半導体関連産業で問題とされているこの「深
い準位」の熱励起による荷電状態が「深い準位」の性質
によって異なり、C−V特性測定時に測定試料の空乏層
領域で「深い準位」に、例えば捕獲された電子が熱的に
励起されて伝導帯に放出されるためと、C−V特性測定
時に空乏化する領域に種々の「深い準位」が存在するた
めに、測定点Vに対応する測定値Cは、種々の大きさの
時間変化を伴う。本発明の方法を実施した本実施例での
測定によれば、測定値Cの時間変化が大きい時は緩やか
に測定点Vの掃引を行うので速い変化を正確にとらえる
ことができ、逆に時間変化の小さい時は測定点Vの掃引
は速やかになるので、測定時間を無駄にすることがな
い。This operation has the following effects. "Deep levels" in the semiconductor crystal that constitutes the sample to be measured
And the charge state due to the thermal excitation of this "deep level", which is a problem in the semiconductor-related industry, differs depending on the nature of the "deep level". In the "deep level", for example, trapped electrons are thermally excited and emitted to the conduction band, and various "deep levels" exist in the region depleted during CV characteristic measurement. , The measurement value C corresponding to the measurement point V is accompanied by various time-dependent changes. According to the measurement in the present embodiment in which the method of the present invention is performed, when the measured value C changes greatly with time, the measurement point V is gently swept, so that a rapid change can be accurately captured, and conversely, the time When the change is small, the measurement point V is swept quickly, so that the measurement time is not wasted.
本発明の方法の測定結果(第2図中(イ))と前記従
来技術(a)による方法での測定結果(第2図中(ロ)
乃至(ニ))とを比べると、従来技術による測定結果
は、測定点の掃引の速さに応じて異なった測定結果とな
り、第2図中(ロ)、(ハ)、(ニ)の順にバイアス電
圧の掃引速さが速くなると測定結果は往路復路で、より
異なるものになる欠点を表している。一方、本発明によ
る測定結果は往路復路で同一の測定結果となり「深い順
位」によるC−V特性曲線の変曲点も正確にとらえてい
る。Measurement results of the method of the present invention ((a) in FIG. 2) and measurement results by the method according to the conventional technique (a) ((b) in FIG. 2)
When compared with (d) to (d), the measurement results obtained by the conventional technique are different according to the sweep speed of the measurement point, and in the order of (b), (c), and (d) in FIG. This shows a defect that the measurement result becomes more different in the forward and return paths as the sweep speed of the bias voltage becomes faster. On the other hand, the measurement results according to the present invention are the same measurement results on the outward and return routes, and accurately capture the inflection point of the CV characteristic curve due to the "deep order".
〔実施例2〕 本発明の方法をフォトキャパシタンス法に応用した例
について述べる。Example 2 An example in which the method of the present invention is applied to the photocapacitance method will be described.
フォトキャパシタンス法は半導体関連工業の研究開発
において、半導体材料の結晶評価の基準として最も重要
なものの1つとされる「深い準位」の直接的測定を最も
高感度に行える方法である。The photocapacitance method is the most sensitive method for directly measuring the "deep level", which is one of the most important criteria for crystal evaluation of semiconductor materials in the research and development of semiconductor related industries.
フォトキャパシタンス法について簡単に述べる。評価
を行う半導体結晶を用いてp−n接合等でダイオードを
形成するか、あるいは結晶基板上に形成された半導体装
置の接合部に分光器を用いた光学系などを用いて単色光
を照射する。この単色光のエネルギー値:hνに対応した
「深い準位」に捕えられていた電子が励起され、伝導帯
に達してキャリアとして接合部から流れ去ると接合部の
空間電荷が変化する。The photocapacitance method will be briefly described. A diode is formed with a pn junction or the like using a semiconductor crystal to be evaluated, or monochromatic light is irradiated to the junction of a semiconductor device formed on a crystal substrate using an optical system using a spectroscope or the like. . When the electrons trapped in the “deep level” corresponding to the energy value of this monochromatic light: hν are excited and reach the conduction band and flow away from the junction as carriers, the space charge of the junction changes.
この空間電荷の変化を接合容量の変化として容量計で
測定する。単色光のエネルギーhνを掃引して、接合容
量の変化を測定し、接合容量が応答するエネルギー値か
ら「深い準位」の関係する光学的遷移エネルギー値を知
り、容量の変化量から「深い準位」の値を知ることがで
きる。本実施例では、空乏層の拡がりを一定するため
に、バイアス電圧を制御して接合容量を一定に保ちつ
つ、単色光のエネルギーhνを掃引し、この制御された
バイアス電圧と光のエネルギーを測定結果として得る。This change in space charge is measured by a capacitance meter as a change in junction capacitance. The energy hν of monochromatic light is swept, the change in the junction capacitance is measured, the optical transition energy value related to the “deep level” is known from the energy value to which the junction capacitance responds, and the “deep level” is determined from the change amount of the capacitance. You can know the value of "rank". In this embodiment, in order to keep the spread of the depletion layer constant, the bias voltage is controlled to keep the junction capacitance constant, the energy hν of monochromatic light is swept, and the bias voltage and light energy thus controlled are measured. Get as a result.
第3図は本発明の方法をフォトキャパシタンス法に応
用した一例を説明するための装置例のプロック図であ
る。図中31は、本装置で「深い準位」について測定しよ
うとする試料で接合容量を測定するための容量計32に接
続される。容量計32は、一定に保つべき接合容量と設定
された容量との差の値を出力できるもので、この差を積
分する積分器33に入力され、積分された値によって積分
器33に接続された電圧源34から前記容量計32を介して測
定試料31にバイアス電圧が印加される。これによって負
帰還ループが形成されて、光エネルギー照射による試料
接合部の空乏層の空間電荷状態に変化が起こっても一定
の接合容量に保持される。FIG. 3 is a block diagram of an apparatus for explaining an example in which the method of the present invention is applied to the photocapacitance method. Reference numeral 31 in the figure is connected to a capacitance meter 32 for measuring the junction capacitance of a sample to be measured for "deep level" in this device. The capacitance meter 32 is capable of outputting the value of the difference between the junction capacitance that should be kept constant and the set capacitance, and is input to the integrator 33 that integrates this difference, and is connected to the integrator 33 by the integrated value. A bias voltage is applied to the measurement sample 31 from the voltage source 34 via the capacitance meter 32. As a result, a negative feedback loop is formed, and even if the space charge state of the depletion layer of the sample junction changes due to the irradiation of light energy, it is held at a constant junction capacitance.
一方、前記バイアス電圧を数値として得るために、デ
ジタルボルトメータが電圧源34の出力側に接続される。
このデジタルボルトメータ35の数値化されたバイアス電
圧値は制御コンピュータから読み出すことができる。On the other hand, in order to obtain the bias voltage as a numerical value, a digital voltmeter is connected to the output side of the voltage source 34.
The digitized bias voltage value of the digital voltmeter 35 can be read from the control computer.
36は単色光光源で、例えばタングステン球の光源を分
光器で分光して単色光を得、ミラー等光学系を用いて試
料ダイオードに照射する。この単色光源は制御コンピュ
ータ37によって波長掃引を制御することができるように
接続されている。38は測定開始点設定器で、波長掃引の
開始点を設定し制御コンピュータへ出力する。39は比例
定数器で制御コンピュータ37へ出力するべく接続されて
いる。測定開始点と比例定数は制御コンピュータ37のキ
ーボード等から入力することもできる。40は測定結果を
コンピュータ37から出力して描くXYプロッタである。Reference numeral 36 denotes a monochromatic light source, for example, a tungsten sphere light source is dispersed by a spectroscope to obtain monochromatic light, and the sample diode is irradiated with the optical system such as a mirror. This monochromatic light source is connected so that the wavelength sweep can be controlled by the control computer 37. 38 is a measurement start point setting device, which sets the wavelength sweep start point and outputs it to the control computer. Reference numeral 39 is a proportional constant device connected to output to the control computer 37. The measurement start point and the constant of proportionality can also be input from the keyboard of the control computer 37 or the like. Reference numeral 40 is an XY plotter that outputs the measurement result from the computer 37 and draws it.
本発明の方法によって、測定点を単色光のエネルギー
hν、測定値をバイアス電圧Vbとしたフォトキャパシタ
ンス測定のための制御コンピュータ37が行うフローチャ
ートについて述べる。A flowchart executed by the control computer 37 for measuring the photocapacitance in which the measurement point is the energy hν of monochromatic light and the measurement value is the bias voltage Vb according to the method of the present invention will be described.
第4図はフローチャートで、時間基準値Δtを定める
ために41で一定時間間隔毎に本フローを開始する。42で
測定試料31に電圧源34から印加してバイアス電圧Vbをデ
ジタルボルトメータ35で数値化して制御コンピュータ37
に入力し、前回入力の値Vb′との差ΔVb=Vb′−Vbを測
定値の時間微分量ΔVb/Δtとして得る。43で比例定数
kを入力して、本発明の方法であるところのXYプロッタ
10が測定結果を描く速さが一定であるように演算を行
う。このため、本具体例では(dx/dt)2+(dy/dt)2
=k(一定)とする。すなわち、時間基準量Δt毎に演
算を行うのでΔhν=(k−(ΔVb)2)1/2と演算す
る。44で現在の測定点hνにΔhνを加えてhν′=h
ν+Δhνとする。(ただし、測定開始時は測定開始点
設定器38の値hν0をhν′とする。このhν′が次の
測定点の値である。これをもって単色光光源36を制御し
て測定点を定める。45でXYプロッタ40に測定結果を記録
し、あるいは必要ならば測定結果を記憶する。測定終了
後、測定結果をXYプロッタに描かせることもできる。こ
の後フローは41へ戻り測定終了まで繰り返される。FIG. 4 is a flow chart. In order to determine the time reference value Δt, this flow starts at 41 at regular time intervals. At 42, the bias voltage Vb is applied to the measurement sample 31 from the voltage source 34 and digitized by the digital voltmeter 35 to control the computer 37.
And the difference ΔVb = Vb′−Vb from the value Vb ′ input last time is obtained as the time differential amount ΔVb / Δt of the measured value. The proportional constant k is input at 43, and the XY plotter according to the method of the present invention is input.
The calculation is performed so that the speed at which 10 draws the measurement result is constant. Therefore, in this example, (dx / dt) 2 + (dy / dt) 2
= K (constant). That is, since the calculation is performed for each time reference amount Δt, Δhν = (k− (ΔVb) 2 ) 1/2 is calculated. At 44, add Δhν to the current measurement point hν and hν ′ = h
Let ν + Δhν. (However, at the start of measurement, the value hν 0 of the measurement start point setting device 38 is set to hν ′. This hν ′ is the value of the next measurement point. With this, the monochromatic light source 36 is controlled to determine the measurement point. At 45, record the measurement result in the XY plotter 40, or store the measurement result if necessary. After the measurement, the measurement result can be drawn on the XY plotter. After that, the flow returns to 41 and is repeated until the measurement is completed. Be done.
次に本実施例の作用について述べる。測定開始は、制
御コンピュータの起動によって行われ、測定開始点設定
器38から入力されたhν0の値によって単色光光源36か
らのエネルギー値hνの単色光が、試料37の接合部に照
射される。このhνの大きさのエネルギーに応答する
「深い準位」が試料を構成する結晶に内在していると、
接合容量が変化し容量計32の出力である容量の偏差ΔC
が発生し、それを打ち消すべく電圧計34の電圧Vbが変化
する。制御コンピュータ37の行うフローチャート(第4
図)の42でこのVbの時間変化量ΔVb/Δtが大きいとフ
ローチャートの43でΔhνは演算内容Δhν=(k−
(ΔVb)2)1/2で小さくされ、フローチャート44で行
う処理である単色光エネルギーの変化分Δhνが加算さ
れた光エネルギー値hν′=hν+Δhνに単色光源36
を制御する。この作用は短時間のうちに繰り返し行われ
るので、結果として単色光光源36の行う光エネルギーの
掃引は遅くなる。逆に光エネルギーhνに応答する「深
い準位」が試料37の結晶に存在せず電圧Vbが変化しない
場合には、フローチャート第4図の42でΔVb/Δtは零
となりフローチャート43でΔhν=(k−(ΔVb)2)
1/2=k1/2となり、結果として単色光光源36のエネルギ
ー掃引は速くなる。Next, the operation of this embodiment will be described. The measurement is started by activating the control computer, and the monochromatic light having the energy value hν from the monochromatic light source 36 is applied to the joint portion of the sample 37 according to the value of hν 0 input from the measurement start point setter 38. . If a “deep level” that responds to this hν-sized energy is inherent in the crystal that constitutes the sample,
The deviation of the capacitance which is the output of the capacitance meter 32 due to the change of the junction capacitance ΔC
Occurs, and the voltage Vb of the voltmeter 34 changes to cancel it. Flowchart of control computer 37 (4th
If the time variation ΔVb / Δt of Vb is large at 42 in the figure), Δhν is calculated at Δhν = (k−
The light energy value hν ′ = hν + Δhν is reduced to (ΔVb) 2 ) 1/2 and the change Δhν of the monochromatic light energy, which is the process performed in the flowchart 44, is added to the monochromatic light source 36.
Control. Since this action is repeatedly performed within a short time, as a result, the sweep of the light energy performed by the monochromatic light source 36 is delayed. On the contrary, when the “deep level” in response to the light energy hν does not exist in the crystal of the sample 37 and the voltage Vb does not change, ΔVb / Δt becomes zero at 42 in the flowchart of FIG. 4 and Δhν = ( k- (ΔVb) 2 )
1/2 = k 1/2 , and as a result, the energy sweep of the monochromatic light source 36 becomes faster.
この作用によって次の効果を生ずる。「深い準位」の
捕獲断面積σが単色光hνによる励起の時定数τと単色
光の光の強さNphとの関係でτ=1/(σ/Nph)で定義さ
れ、種々の「深い準位」の原因によって捕獲断面積σが
大きく異なり、測定値Vbの時間変化が大きく異なる。本
実施例の方法を用いると、捕獲断面積の差異による測定
値Vbの時間変化の大きな差にも拘らず、正確な測定結果
を速やかに得ることができる。This action produces the following effect. The “deep level” trapping cross section σ is defined as τ = 1 / (σ / Nph) in relation to the time constant τ of excitation by monochromatic light hν and the intensity Nph of monochromatic light, and various “deep levels” The capture cross section σ differs greatly depending on the cause of the “level”, and the time change of the measured value Vb also greatly changes. By using the method of the present embodiment, an accurate measurement result can be promptly obtained despite a large difference in the change over time of the measured value Vb due to the difference in capture cross-section.
第5図は、本発明の方法を実施した本例による測定結
果で、単色光エネルギーhνに対する急峻な試料への印
加電圧Vbの変化を正確にとらえているが、前述の従来技
術の(b)による離散的測定点hνを選択して測定値の
Vbの時間変化が終了するまで待つ測定法による測定結果
である第6図は、hνに対するVbの急峻な変化をとらえ
ていないことが明らかである。FIG. 5 is a measurement result according to the present example in which the method of the present invention is carried out, which accurately captures a sharp change in the applied voltage Vb to the sample with respect to the monochromatic light energy hν. Select the discrete measurement point hν by
FIG. 6, which is the measurement result by the measurement method of waiting until the time change of Vb is completed, clearly shows that the abrupt change of Vb with respect to hν is not captured.
以上述べたごとく本発明の方法を用いれば、フォトキ
ャパシタンス測定においては「深い準位」の光学的遷移
エネルギー値を得る光エネルギーhνを正確に知ること
ができ、半導体結晶の品質向上に大いに貢献することが
できる。As described above, when the method of the present invention is used, it is possible to accurately know the light energy hν for obtaining the optical transition energy value of “deep level” in the photocapacitance measurement, which greatly contributes to the quality improvement of the semiconductor crystal. be able to.
産業分野での物理量測定において、測定値が測定点毎
に大きく異なる時間変化を伴い測定困難なものは、その
物理現象の例えば実施例2の測定対象である「深い準
位」の原因からの捕獲断面積のごとく測定値の時間的変
化による現象が正確に把握できていないものであり、本
発明の方法を実施することで原因を解明することが可能
となる。In the physical quantity measurement in the industrial field, measurement values that vary greatly at different measurement points with time change and are difficult to measure are captured from the cause of the "deep level" of the physical phenomenon, which is the measurement target of Example 2, for example. The phenomenon due to the temporal change of the measured value such as the cross-sectional area cannot be accurately grasped, and the cause can be clarified by carrying out the method of the present invention.
工業分野での物理量測定において、任意の測定点に対
応する測定値が時間変化を伴う場合が多く、このような
測定では正確な測定は困難で問題とされている。In the physical quantity measurement in the industrial field, a measurement value corresponding to an arbitrary measurement point often changes with time, and accurate measurement is difficult and problematic in such measurement.
本発明の測定法を用いることで、測定値が大きな時間
変化を伴う測定領域では測定点の掃引を遅くし、測定値
の時間変化が小さい領域では速やかに測定点を掃引する
ため、測定値の時間変化に追従して測定結果は正確であ
る。By using the measurement method of the present invention, the measurement value is delayed in the measurement area with a large change over time in the measurement area, and the measurement point is swept quickly in the area in which the change over time in the measurement value is small. The measurement result is accurate according to the time change.
また、測定に要する時間も効率的であるので、工業的
利用価値は高い。Moreover, since the time required for measurement is efficient, it has high industrial utility value.
第1図は本発明の測定方法を応用した記録装置の一例、
第2図は測定結果の一例、第3図は本発明の方法をフォ
トキャパシタンス法に応用した一例を説明するための測
定例のブロック図、第4図は本発明の方法を応用したフ
ォトキャパシタンス特性測定のためのプログラムのフロ
ーチャートを示す図、第5図は本発明の方法を応用した
装置によって得られたフォトキャパシタンス特性の測定
結果を表す図、第6図は従来技術によるフォトキャパシ
タンス特性の測定結果、第7図は任意測定点における測
定値の時間的変化を表す図である。 11、31……被測定対象物としての試料、12……容量計、
13……電圧源、14……記録計、15……時間積分器、17…
…演算器、35……デジタルボルトメータ、36……単色光
光源、37……制御コンピュータFIG. 1 is an example of a recording apparatus to which the measuring method of the present invention is applied,
2 is an example of a measurement result, FIG. 3 is a block diagram of a measurement example for explaining an example in which the method of the present invention is applied to a photocapacitance method, and FIG. 4 is a photocapacitance characteristic to which the method of the present invention is applied. FIG. 5 is a diagram showing a flow chart of a program for measurement, FIG. 5 is a diagram showing measurement results of photocapacitance characteristics obtained by an apparatus to which the method of the present invention is applied, and FIG. , FIG. 7 is a diagram showing a temporal change of the measured value at an arbitrary measuring point. 11, 31 …… Sample as the object to be measured, 12 …… Capacity meter,
13 ... Voltage source, 14 ... Recorder, 15 ... Time integrator, 17 ...
… Computer, 35 …… Digital voltmeter, 36 …… Monochromatic light source, 37 …… Control computer
Claims (1)
が時間的変化を有する測定結果の記録において、任意測
定点における測定値の時間微分量を検出し、該検出結果
から新たな測定点を得るために、測定結果を描く速さが
一定、もしくは、ほぼ一定とする過程を有することを特
徴とする物理量測定方法。1. When recording a measurement result in which a measurement value of an object to be measured with respect to an arbitrary measurement point changes with time, a time differential amount of the measurement value at the arbitrary measurement point is detected, and a new measurement point is detected from the detection result. In order to obtain the above, a method for measuring a physical quantity, characterized by having a process of making a drawing speed of a measurement result constant or almost constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61266425A JPH0820276B2 (en) | 1986-11-08 | 1986-11-08 | Physical quantity measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61266425A JPH0820276B2 (en) | 1986-11-08 | 1986-11-08 | Physical quantity measurement method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7143805A Division JP2549998B2 (en) | 1995-05-01 | 1995-05-01 | Physical quantity measurement controller |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63120266A JPS63120266A (en) | 1988-05-24 |
| JPH0820276B2 true JPH0820276B2 (en) | 1996-03-04 |
Family
ID=17430757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61266425A Expired - Fee Related JPH0820276B2 (en) | 1986-11-08 | 1986-11-08 | Physical quantity measurement method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0820276B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6031400B2 (en) * | 1979-01-20 | 1985-07-22 | 松下電器産業株式会社 | Speaker characteristics measuring device |
-
1986
- 1986-11-08 JP JP61266425A patent/JPH0820276B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63120266A (en) | 1988-05-24 |
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